DE69841218D1 - Verfahren und system zur inspektion von lithographischen masken - Google Patents

Verfahren und system zur inspektion von lithographischen masken

Info

Publication number
DE69841218D1
DE69841218D1 DE69841218T DE69841218T DE69841218D1 DE 69841218 D1 DE69841218 D1 DE 69841218D1 DE 69841218 T DE69841218 T DE 69841218T DE 69841218 T DE69841218 T DE 69841218T DE 69841218 D1 DE69841218 D1 DE 69841218D1
Authority
DE
Germany
Prior art keywords
inspecting
lithographic masks
lithographic
masks
inspecting lithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69841218T
Other languages
English (en)
Inventor
Fang-Cheng Chang
Yao-Ting Wang
Yagyensh C Pati
Linard Karklin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Synopsys Inc
Original Assignee
Synopsys Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Synopsys Inc filed Critical Synopsys Inc
Application granted granted Critical
Publication of DE69841218D1 publication Critical patent/DE69841218D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F18/00—Pattern recognition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
DE69841218T 1997-09-17 1998-08-11 Verfahren und system zur inspektion von lithographischen masken Expired - Lifetime DE69841218D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US5930697P 1997-09-17 1997-09-17
US09/130,996 US6757645B2 (en) 1997-09-17 1998-08-07 Visual inspection and verification system
PCT/US1998/016742 WO1999014706A2 (en) 1997-09-17 1998-08-11 Visual inspection and verification system

Publications (1)

Publication Number Publication Date
DE69841218D1 true DE69841218D1 (de) 2009-11-19

Family

ID=26738616

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69841218T Expired - Lifetime DE69841218D1 (de) 1997-09-17 1998-08-11 Verfahren und system zur inspektion von lithographischen masken

Country Status (7)

Country Link
US (2) US6757645B2 (de)
EP (1) EP1012779B1 (de)
JP (1) JP2001516898A (de)
KR (1) KR100596760B1 (de)
AU (1) AU8780998A (de)
DE (1) DE69841218D1 (de)
WO (1) WO1999014706A2 (de)

Families Citing this family (189)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7107571B2 (en) * 1997-09-17 2006-09-12 Synopsys, Inc. Visual analysis and verification system using advanced tools
US6757645B2 (en) * 1997-09-17 2004-06-29 Numerical Technologies, Inc. Visual inspection and verification system
US7093229B2 (en) * 1997-09-17 2006-08-15 Synopsys, Inc. System and method for providing defect printability analysis of photolithographic masks with job-based automation
US7617474B2 (en) * 1997-09-17 2009-11-10 Synopsys, Inc. System and method for providing defect printability analysis of photolithographic masks with job-based automation
US6578188B1 (en) 1997-09-17 2003-06-10 Numerical Technologies, Inc. Method and apparatus for a network-based mask defect printability analysis system
US6178360B1 (en) * 1998-02-05 2001-01-23 Micron Technology, Inc. Methods and apparatus for determining optimum exposure threshold for a given photolithographic model
US6301697B1 (en) * 1999-04-30 2001-10-09 Nicolas B. Cobb Streamlined IC mask layout optical and process correction through correction reuse
US6891967B2 (en) * 1999-05-04 2005-05-10 Speedline Technologies, Inc. Systems and methods for detecting defects in printed solder paste
US7072503B2 (en) * 1999-05-04 2006-07-04 Speedline Technologies, Inc. Systems and methods for detecting defects in printed solder paste
US6704695B1 (en) * 1999-07-16 2004-03-09 International Business Machines Corporation Interactive optical proximity correction design method
US7391929B2 (en) * 2000-02-11 2008-06-24 Sony Corporation Masking tool
US7120285B1 (en) * 2000-02-29 2006-10-10 Advanced Micro Devices, Inc. Method for evaluation of reticle image using aerial image simulator
JP2002107309A (ja) * 2000-09-28 2002-04-10 Toshiba Corp 欠陥検査装置及び欠陥検査方法
JP3266602B1 (ja) * 2000-10-30 2002-03-18 洋一 奥寺 アドレス照会システム、コンピュータプログラム製品及びその方法
EP1337838B1 (de) * 2000-11-30 2007-01-10 SIGMA-C Software AG Verfahren und vorrichtung zur bestimmung von eigenschaften einer integrierten schaltung
US6653026B2 (en) * 2000-12-20 2003-11-25 Numerical Technologies, Inc. Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask
US6553559B2 (en) * 2001-01-05 2003-04-22 International Business Machines Corporation Method to determine optical proximity correction and assist feature rules which account for variations in mask dimensions
US6602728B1 (en) * 2001-01-05 2003-08-05 International Business Machines Corporation Method for generating a proximity model based on proximity rules
US6873720B2 (en) 2001-03-20 2005-03-29 Synopsys, Inc. System and method of providing mask defect printability analysis
US6925202B2 (en) 2001-03-20 2005-08-02 Synopsys, Inc. System and method of providing mask quality control
US6816997B2 (en) * 2001-03-20 2004-11-09 Cheehoe Teh System and method for performing design rule check
AU2002245560A1 (en) * 2001-03-20 2002-10-03 Numerial Technologies, Inc. System and method of providing mask defect printability analysis
US20030014146A1 (en) * 2001-07-12 2003-01-16 Kabushiki Kaisha Toshiba Dangerous process/pattern detection system and method, danger detection program, and semiconductor device manufacturing method
JP4122735B2 (ja) * 2001-07-24 2008-07-23 株式会社日立製作所 半導体デバイスの検査方法および検査条件設定方法
US6721928B2 (en) 2001-07-26 2004-04-13 Numerical Technologies, Inc. Verification utilizing instance-based hierarchy management
JP2004537142A (ja) * 2001-07-26 2004-12-09 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 走査型電子顕微鏡の性能を測定する方法
US6560766B2 (en) 2001-07-26 2003-05-06 Numerical Technologies, Inc. Method and apparatus for analyzing a layout using an instance-based representation
US7014955B2 (en) 2001-08-28 2006-03-21 Synopsys, Inc. System and method for indentifying dummy features on a mask layer
US6670082B2 (en) 2001-10-09 2003-12-30 Numerical Technologies, Inc. System and method for correcting 3D effects in an alternating phase-shifting mask
US6898596B2 (en) * 2001-10-23 2005-05-24 Therma-Wave, Inc. Evolution of library data sets
US6976240B2 (en) * 2001-11-14 2005-12-13 Synopsys Inc. Simulation using design geometry information
US7085698B2 (en) * 2001-12-18 2006-08-01 Synopsys, Inc. Method for providing flexible and dynamic reporting capability using simulation tools
US6658640B2 (en) 2001-12-26 2003-12-02 Numerical Technologies, Inc. Simulation-based feed forward process control
JP4138318B2 (ja) * 2002-01-08 2008-08-27 株式会社ルネサステクノロジ リソグラフィプロセスマージン評価装置、リソグラフィプロセスマージン評価方法およびリソグラフィプロセスマージン評価プログラム
WO2003061266A2 (en) * 2002-01-15 2003-07-24 Yissum Research Development Company Of The Hebrew University Of Jerusalem System and method for compressing the dynamic range of an image
US6943810B2 (en) * 2002-02-06 2005-09-13 International Business Machines Corporation Layered article data verification
US7257247B2 (en) * 2002-02-21 2007-08-14 International Business Machines Corporation Mask defect analysis system
US7136796B2 (en) * 2002-02-28 2006-11-14 Timbre Technologies, Inc. Generation and use of integrated circuit profile-based simulation information
US6745372B2 (en) 2002-04-05 2004-06-01 Numerical Technologies, Inc. Method and apparatus for facilitating process-compliant layout optimization
US7085622B2 (en) * 2002-04-19 2006-08-01 Applied Material, Inc. Vision system
US7233841B2 (en) * 2002-04-19 2007-06-19 Applied Materials, Inc. Vision system
US6954911B2 (en) * 2002-05-01 2005-10-11 Synopsys, Inc. Method and system for simulating resist and etch edges
DE10230532B4 (de) * 2002-07-05 2007-03-08 Infineon Technologies Ag Verfahren zum Bestimmen des Aufbaus einer Maske zum Mikrostrukturieren von Halbleitersubstraten mittels Fotolithographie
DE10230755A1 (de) * 2002-07-09 2004-01-22 Carl Zeiss Jena Gmbh Anordnung zur Herstellung von Photomasken
US6902855B2 (en) * 2002-07-15 2005-06-07 Kla-Tencor Technologies Qualifying patterns, patterning processes, or patterning apparatus in the fabrication of microlithographic patterns
EP1523696B1 (de) * 2002-07-15 2016-12-21 KLA-Tencor Corporation Defektinspektionsmethoden, die das aufnehmen des projizierten maskenabbildes unter verschiedenen lithographischen prozessvariablen beinhalten
US6782525B2 (en) 2002-09-05 2004-08-24 Lsi Logic Corporation Wafer process critical dimension, alignment, and registration analysis simulation tool
US7043071B2 (en) * 2002-09-13 2006-05-09 Synopsys, Inc. Soft defect printability simulation and analysis for masks
US7149340B2 (en) * 2002-09-20 2006-12-12 Lsi Logic Corporation Mask defect analysis for both horizontal and vertical processing effects
US7123356B1 (en) * 2002-10-15 2006-10-17 Kla-Tencor Technologies Corp. Methods and systems for inspecting reticles using aerial imaging and die-to-database detection
JP2004157475A (ja) * 2002-11-08 2004-06-03 Toshiba Corp 集積回路のパターン設計方法、露光マスクの作成方法、露光マスク、および集積回路装置の製造方法
JP2004163348A (ja) * 2002-11-15 2004-06-10 Nippon Avionics Co Ltd 検査状況表示方法
US6768958B2 (en) 2002-11-26 2004-07-27 Lsi Logic Corporation Automatic calibration of a masking process simulator
US7131100B2 (en) * 2002-12-10 2006-10-31 Synopsys Inc. Identifying phantom images generated by side-lobes
US7152219B2 (en) * 2002-12-10 2006-12-19 Synopsys Inc. Reference image generation from subject image for photolithography mask analysis
US7171047B2 (en) 2002-12-20 2007-01-30 Lsi Logic Corporation Adaptive Sem edge recognition algorithm
US6996790B2 (en) * 2003-01-30 2006-02-07 Synopsys, Inc. System and method for generating a two-dimensional yield map for a full layout
DE10316821A1 (de) * 2003-04-03 2004-10-21 Infineon Technologies Ag Verfahren und Vorrichtung zur Korrektur von Abbildungsfehlern eines optischen Systems sowie eine Verwendung der Vorrichtung
US9002497B2 (en) * 2003-07-03 2015-04-07 Kla-Tencor Technologies Corp. Methods and systems for inspection of wafers and reticles using designer intent data
US20050234684A1 (en) * 2004-04-19 2005-10-20 Mentor Graphics Corp. Design for manufacturability
WO2005017997A1 (en) * 2003-08-01 2005-02-24 Applied Materials Israel, Ltd. Charged particle beam inspection
US7558419B1 (en) 2003-08-14 2009-07-07 Brion Technologies, Inc. System and method for detecting integrated circuit pattern defects
US8073667B2 (en) * 2003-09-30 2011-12-06 Tokyo Electron Limited System and method for using first-principles simulation to control a semiconductor manufacturing process
US8296687B2 (en) * 2003-09-30 2012-10-23 Tokyo Electron Limited System and method for using first-principles simulation to analyze a process performed by a semiconductor processing tool
US8032348B2 (en) * 2003-09-30 2011-10-04 Tokyo Electron Limited System and method for using first-principles simulation to facilitate a semiconductor manufacturing process
US8036869B2 (en) * 2003-09-30 2011-10-11 Tokyo Electron Limited System and method for using first-principles simulation to control a semiconductor manufacturing process via a simulation result or a derived empirical model
US8050900B2 (en) * 2003-09-30 2011-11-01 Tokyo Electron Limited System and method for using first-principles simulation to provide virtual sensors that facilitate a semiconductor manufacturing process
US7003758B2 (en) * 2003-10-07 2006-02-21 Brion Technologies, Inc. System and method for lithography simulation
US7010776B2 (en) * 2003-10-27 2006-03-07 International Business Machines Corporation Extending the range of lithographic simulation integrals
JP2005157043A (ja) * 2003-11-27 2005-06-16 Toshiba Corp マスクパターン補正結果検証方法およびマスクパターン補正結果検証装置
US8151220B2 (en) * 2003-12-04 2012-04-03 Kla-Tencor Technologies Corp. Methods for simulating reticle layout data, inspecting reticle layout data, and generating a process for inspecting reticle layout data
US7069534B2 (en) * 2003-12-17 2006-06-27 Sahouria Emile Y Mask creation with hierarchy management using cover cells
JP2005189655A (ja) 2003-12-26 2005-07-14 Nec Electronics Corp マスク検査方法
WO2005073807A1 (en) * 2004-01-29 2005-08-11 Kla-Tencor Technologies Corporation Computer-implemented methods for detecting defects in reticle design data
US9188974B1 (en) 2004-02-13 2015-11-17 Kla-Tencor Technologies Corp. Methods for improved monitor and control of lithography processes
US7162223B2 (en) * 2004-02-17 2007-01-09 Teamon Systems, Inc. System and method for notifying users of an event using alerts
US7269804B2 (en) * 2004-04-02 2007-09-11 Advanced Micro Devices, Inc. System and method for integrated circuit device design and manufacture using optical rule checking to screen resolution enhancement techniques
US7448012B1 (en) 2004-04-21 2008-11-04 Qi-De Qian Methods and system for improving integrated circuit layout
JP2005309140A (ja) * 2004-04-22 2005-11-04 Toshiba Corp フォトマスク製造方法、フォトマスク欠陥修正箇所判定方法、及びフォトマスク欠陥修正箇所判定装置
JP2005317818A (ja) * 2004-04-30 2005-11-10 Dainippon Screen Mfg Co Ltd パターン検査装置およびパターン検査方法
JP2007536673A (ja) * 2004-05-09 2007-12-13 メンター・グラフィクス・コーポレーション 見込み欠陥位置同定方法、見込み欠陥位置同定ツール
EP1763756A4 (de) * 2004-05-21 2009-05-06 Pressco Tech Inc Grafische benutzerschnittstelle mit nachprüfungskonfiguration
US7475379B2 (en) * 2004-06-23 2009-01-06 International Business Machines Corporation Methods and systems for layout and routing using alternating aperture phase shift masks
CN101002141B (zh) * 2004-07-21 2011-12-28 恪纳腾技术公司 生成用于生成掩模版的仿真图像的仿真程序的输入的计算机实现的方法
US7663741B2 (en) * 2004-08-31 2010-02-16 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, calibration method and computer program product
JP4904034B2 (ja) * 2004-09-14 2012-03-28 ケーエルエー−テンカー コーポレイション レチクル・レイアウト・データを評価するための方法、システム及び搬送媒体
US8532949B2 (en) * 2004-10-12 2013-09-10 Kla-Tencor Technologies Corp. Computer-implemented methods and systems for classifying defects on a specimen
US7400390B2 (en) * 2004-11-29 2008-07-15 Applied Materials, Israel, Ltd. Inspection system and a method for aerial reticle inspection
US7729529B2 (en) * 2004-12-07 2010-06-01 Kla-Tencor Technologies Corp. Computer-implemented methods for detecting and/or sorting defects in a design pattern of a reticle
DE102005032601A1 (de) * 2005-01-07 2006-07-20 Heidelberger Druckmaschinen Ag Druckmaschine
JP4916116B2 (ja) * 2005-02-01 2012-04-11 株式会社ホロン パターン特定方法およびパターン特定装置
DE102005009536A1 (de) * 2005-02-25 2006-08-31 Carl Zeiss Sms Gmbh Verfahren zur Maskeninspektion im Rahmen des Maskendesigns und der Maskenherstellung
JP2006244073A (ja) * 2005-03-02 2006-09-14 Matsushita Electric Ind Co Ltd 半導体設計装置
US7356787B2 (en) * 2005-04-06 2008-04-08 Taiwan Semiconductor Manufacturing Co., Ltd. Alternative methodology for defect simulation and system
US7305334B2 (en) * 2005-05-24 2007-12-04 International Business Machines Corporation Methodology for image fidelity verification
US7853920B2 (en) * 2005-06-03 2010-12-14 Asml Netherlands B.V. Method for detecting, sampling, analyzing, and correcting marginal patterns in integrated circuit manufacturing
US7369129B2 (en) * 2005-06-13 2008-05-06 Sap Aktiengesellschaft Automated user interface testing
US7769225B2 (en) * 2005-08-02 2010-08-03 Kla-Tencor Technologies Corp. Methods and systems for detecting defects in a reticle design pattern
JP2007071678A (ja) * 2005-09-07 2007-03-22 Hitachi High-Technologies Corp 検査システム
US7676077B2 (en) 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US8041103B2 (en) 2005-11-18 2011-10-18 Kla-Tencor Technologies Corp. Methods and systems for determining a position of inspection data in design data space
US7570796B2 (en) 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
JP4860294B2 (ja) * 2006-02-16 2012-01-25 株式会社日立ハイテクノロジーズ 電子顕微鏡
JP4572862B2 (ja) * 2006-04-05 2010-11-04 富士ゼロックス株式会社 画像形成装置シミュレーション装置、画像形成装置シミュレーション方法及びプログラム
TW200746259A (en) * 2006-04-27 2007-12-16 Nikon Corp Measuring and/or inspecting method, measuring and/or inspecting apparatus, exposure method, device manufacturing method, and device manufacturing apparatus
KR100699899B1 (ko) * 2006-05-08 2007-03-28 삼성전자주식회사 집적회로 장치 제조용 마스크 검사 장치 및 그 검사 방법
JP4205739B2 (ja) 2006-07-26 2009-01-07 エルピーダメモリ株式会社 レチクルパターンの欠陥修正装置およびその修正方法
JP4203089B2 (ja) * 2006-09-11 2008-12-24 株式会社東芝 キャリブレーション方法、検査方法、及び半導体装置の製造方法
WO2008077100A2 (en) * 2006-12-19 2008-06-26 Kla-Tencor Corporation Systems and methods for creating inspection recipes
US8194968B2 (en) 2007-01-05 2012-06-05 Kla-Tencor Corp. Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions
US8611637B2 (en) * 2007-01-11 2013-12-17 Kla-Tencor Corporation Wafer plane detection of lithographically significant contamination photomask defects
JP2008177064A (ja) * 2007-01-19 2008-07-31 Hitachi High-Technologies Corp 走査型荷電粒子顕微鏡装置および走査型荷電粒子顕微鏡装置で取得した画像の処理方法
US8544064B2 (en) * 2007-02-09 2013-09-24 Sony Corporation Techniques for automatic registration of appliances
US7716023B2 (en) * 2007-02-13 2010-05-11 Oracle America, Inc. Multidimensional process corner derivation using surrogate based simultaneous yield analysis
DE102007000981B4 (de) * 2007-02-22 2020-07-30 Vistec Semiconductor Systems Gmbh Vorrichtung und Verfahren zum Vermessen von Strukturen auf einer Maske und zur Berechnung der aus den Strukturen resultierenden Strukturen in einem Photoresist
US8335369B2 (en) * 2007-02-28 2012-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Mask defect analysis
US7738093B2 (en) 2007-05-07 2010-06-15 Kla-Tencor Corp. Methods for detecting and classifying defects on a reticle
US7962863B2 (en) 2007-05-07 2011-06-14 Kla-Tencor Corp. Computer-implemented methods, systems, and computer-readable media for determining a model for predicting printability of reticle features on a wafer
US8213704B2 (en) 2007-05-09 2012-07-03 Kla-Tencor Corp. Methods and systems for detecting defects in a reticle design pattern
US7818710B2 (en) * 2007-07-03 2010-10-19 Micron Technology, Inc. Method and system for lithographic simulation and verification
KR100891336B1 (ko) * 2007-07-05 2009-03-31 삼성전자주식회사 마스크 레이아웃 이미지의 생성 방법, 이를 수행하는프로그래밍된 명령을 저장하는 컴퓨터에서 판독 가능한저장 매체 및 이미징 시스템
DE102007033243A1 (de) * 2007-07-12 2009-01-15 Carl Zeiss Sms Gmbh Verfahren und Anordnung zur Analyse einer Gruppe von Photolithographiemasken
US7796804B2 (en) 2007-07-20 2010-09-14 Kla-Tencor Corp. Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer
US7711514B2 (en) 2007-08-10 2010-05-04 Kla-Tencor Technologies Corp. Computer-implemented methods, carrier media, and systems for generating a metrology sampling plan
WO2009026358A1 (en) 2007-08-20 2009-02-26 Kla-Tencor Corporation Computer-implemented methods for determining if actual defects are potentially systematic defects or potentially random defects
US8068674B2 (en) * 2007-09-04 2011-11-29 Evolution Robotics Retail, Inc. UPC substitution fraud prevention
KR101328611B1 (ko) * 2007-10-19 2013-11-11 삼성전자주식회사 반도체 메모리 디바이스 제조를 위한 패턴 매칭 방법
JP4554691B2 (ja) * 2008-02-25 2010-09-29 アドバンスド・マスク・インスペクション・テクノロジー株式会社 補正パターン画像生成装置、パターン検査装置および補正パターン画像生成方法
US8139844B2 (en) 2008-04-14 2012-03-20 Kla-Tencor Corp. Methods and systems for determining a defect criticality index for defects on wafers
US7995199B2 (en) * 2008-06-16 2011-08-09 Kla-Tencor Corporation Method for detection of oversized sub-resolution assist features
KR101841897B1 (ko) 2008-07-28 2018-03-23 케이엘에이-텐코어 코오포레이션 웨이퍼 상의 메모리 디바이스 영역에서 검출된 결함들을 분류하기 위한 컴퓨터-구현 방법들, 컴퓨터-판독 가능 매체, 및 시스템들
JP2010107737A (ja) * 2008-10-30 2010-05-13 Toshiba Corp マスク検証方法、半導体装置の製造方法及び露光条件の調整プログラム
JP5287178B2 (ja) * 2008-11-27 2013-09-11 富士通セミコンダクター株式会社 欠陥レビュー装置
US8775101B2 (en) 2009-02-13 2014-07-08 Kla-Tencor Corp. Detecting defects on a wafer
US8204297B1 (en) 2009-02-27 2012-06-19 Kla-Tencor Corp. Methods and systems for classifying defects detected on a reticle
US8112241B2 (en) 2009-03-13 2012-02-07 Kla-Tencor Corp. Methods and systems for generating an inspection process for a wafer
US20110047519A1 (en) * 2009-05-11 2011-02-24 Juan Andres Torres Robles Layout Content Analysis for Source Mask Optimization Acceleration
JP2011040560A (ja) * 2009-08-11 2011-02-24 Toshiba Corp 発光解析装置および発光解析方法
JP4942800B2 (ja) * 2009-08-18 2012-05-30 株式会社ニューフレアテクノロジー 検査装置
US8166423B2 (en) * 2009-09-08 2012-04-24 International Business Machines Corporation Photomask design verification
JP4918598B2 (ja) 2010-01-18 2012-04-18 株式会社ニューフレアテクノロジー 検査装置および検査方法
US9035673B2 (en) * 2010-01-25 2015-05-19 Palo Alto Research Center Incorporated Method of in-process intralayer yield detection, interlayer shunt detection and correction
JP5695924B2 (ja) * 2010-02-01 2015-04-08 株式会社ニューフレアテクノロジー 欠陥推定装置および欠陥推定方法並びに検査装置および検査方法
US8477299B2 (en) * 2010-04-01 2013-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for monitoring mask process impact on lithography performance
US8781781B2 (en) 2010-07-30 2014-07-15 Kla-Tencor Corp. Dynamic care areas
JP5591675B2 (ja) 2010-12-06 2014-09-17 株式会社ニューフレアテクノロジー 検査装置および検査方法
CN102566291B (zh) * 2010-12-29 2015-04-29 中芯国际集成电路制造(上海)有限公司 投影掩膜版的测试系统
US8211717B1 (en) 2011-01-26 2012-07-03 International Business Machines Corporation SEM repair for sub-optimal features
JP5603798B2 (ja) * 2011-02-14 2014-10-08 株式会社キーエンス 欠陥検出装置、欠陥検出方法及びコンピュータプログラム
JP5345169B2 (ja) * 2011-03-25 2013-11-20 株式会社東芝 マスク検査装置及びマスク検査方法
US9170211B2 (en) 2011-03-25 2015-10-27 Kla-Tencor Corp. Design-based inspection using repeating structures
JP2012252055A (ja) * 2011-05-31 2012-12-20 Toshiba Corp マスク検査方法、マスク作製方法および半導体装置の製造方法
CN103907109B9 (zh) 2011-06-27 2017-02-22 耶路撒冷希伯来大学伊萨姆研究发展有限公司 为图像处理目的用滤波器应用卷积的快速数值逼近
US9087367B2 (en) 2011-09-13 2015-07-21 Kla-Tencor Corp. Determining design coordinates for wafer defects
US8831334B2 (en) 2012-01-20 2014-09-09 Kla-Tencor Corp. Segmentation for wafer inspection
US8826200B2 (en) 2012-05-25 2014-09-02 Kla-Tencor Corp. Alteration for wafer inspection
US20140064596A1 (en) 2012-08-29 2014-03-06 Micron Technology, Inc. Descriptor guided fast marching method for analyzing images and systems using the same
US9189844B2 (en) 2012-10-15 2015-11-17 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific information
US8965102B2 (en) 2012-11-09 2015-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for defect analysis of a substrate
US9053527B2 (en) 2013-01-02 2015-06-09 Kla-Tencor Corp. Detecting defects on a wafer
US9134254B2 (en) 2013-01-07 2015-09-15 Kla-Tencor Corp. Determining a position of inspection system output in design data space
US9311698B2 (en) 2013-01-09 2016-04-12 Kla-Tencor Corp. Detecting defects on a wafer using template image matching
KR102029645B1 (ko) * 2013-01-14 2019-11-18 삼성전자 주식회사 맞춤형 마스크의 제조 방법 및 맞춤형 마스크를 이용한 반도체 장치의 제조 방법
KR102019534B1 (ko) 2013-02-01 2019-09-09 케이엘에이 코포레이션 결함 특유의, 다중 채널 정보를 이용한 웨이퍼 상의 결함 검출
US9865512B2 (en) 2013-04-08 2018-01-09 Kla-Tencor Corp. Dynamic design attributes for wafer inspection
US9310320B2 (en) 2013-04-15 2016-04-12 Kla-Tencor Corp. Based sampling and binning for yield critical defects
WO2014186476A2 (en) * 2013-05-14 2014-11-20 Kla-Tencor Corporation Integrated multi-pass inspection
CN103617170B (zh) * 2013-10-23 2017-04-12 上海华力微电子有限公司 曝光机文件自动检查系统
US9529255B2 (en) * 2013-12-04 2016-12-27 Taiwan Semiconductor Manufacturing Co., Ltd. Image process method to improve mask inspection performance
US9478019B2 (en) * 2014-05-06 2016-10-25 Kla-Tencor Corp. Reticle inspection using near-field recovery
EP2952963B1 (de) * 2014-06-03 2020-12-30 Commissariat A L'energie Atomique Et Aux Energies Alternatives Verfahren zur Berechnung der Metrik für ein IC-Herstellungsverfahren
US10312161B2 (en) * 2015-03-23 2019-06-04 Applied Materials Israel Ltd. Process window analysis
KR102343850B1 (ko) 2015-05-06 2021-12-28 삼성전자주식회사 광 근접 보정에서 공통의 바이어스 값을 이용하여 마스크를 제작하는 방법
WO2016202546A1 (en) * 2015-06-16 2016-12-22 Asml Netherlands B.V. Methods for defect validation
US10395361B2 (en) * 2015-08-10 2019-08-27 Kla-Tencor Corporation Apparatus and methods for inspecting reticles
EP3210189B1 (de) * 2015-08-10 2022-03-23 KLA - Tencor Corporation Vorrichtung und verfahren zur vorhersage der druckbarkeit von fehlern auf waferebene
US10699971B2 (en) * 2015-08-17 2020-06-30 Qoniac Gmbh Method for processing of a further layer on a semiconductor wafer
US10008422B2 (en) * 2015-08-17 2018-06-26 Qoniac Gmbh Method for assessing the usability of an exposed and developed semiconductor wafer
JP6527808B2 (ja) 2015-10-27 2019-06-05 株式会社ニューフレアテクノロジー 検査方法および検査装置
KR102387459B1 (ko) * 2015-11-20 2022-04-15 삼성전자주식회사 반도체 소자의 패턴 형성 방법
CN205556762U (zh) * 2016-05-05 2016-09-07 鄂尔多斯市源盛光电有限责任公司 掩膜板、母板、掩膜板制造设备和显示基板蒸镀系统
US10429314B2 (en) * 2017-07-31 2019-10-01 Taiwan Semiconductor Manufacturing Co., Ltd. EUV vessel inspection method and related system
US20200282654A1 (en) * 2019-03-06 2020-09-10 Owens-Brockway Glass Container Inc. Repairing an Outer Surface of a Glass Product
JP7270417B2 (ja) * 2019-03-08 2023-05-10 キヤノン株式会社 インプリント装置の制御方法、インプリント装置、および物品製造方法
US11188212B2 (en) 2020-03-19 2021-11-30 Panasonic Intellectual Property Management Co., Ltd. Methods and systems for monitoring objects for image-inspection
CN113009775A (zh) * 2021-02-25 2021-06-22 广州粤芯半导体技术有限公司 光罩及光罩缺陷检查的方法
CN113237888B (zh) * 2021-05-21 2022-06-14 哈尔滨工业大学 大口径光学元件损伤点在线与离线暗场图像匹配方法
CA3226512A1 (en) * 2021-08-11 2023-02-16 Fuming Wang Mask defect detection
CN117132460B (zh) * 2023-09-12 2024-02-27 上海世禹精密设备股份有限公司 视觉检测标准图的生成方法、装置、电子设备及存储介质

Family Cites Families (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4812962A (en) 1987-04-09 1989-03-14 Harris Corp. Area feature sorting mechanism for neighborhood-based proximity correction in lithography processing of integrated circuit patterns
US5182718A (en) 1989-04-04 1993-01-26 Matsushita Electric Industrial Co., Ltd. Method and apparatus for writing a pattern on a semiconductor sample based on a resist pattern corrected for proximity effects resulting from direct exposure of the sample by a charged-particle beam or light
US5051598A (en) 1990-09-12 1991-09-24 International Business Machines Corporation Method for correcting proximity effects in electron beam lithography
JPH04165353A (ja) 1990-10-30 1992-06-11 Oki Electric Ind Co Ltd ホトマスク修正方法
IL97022A0 (en) 1991-01-24 1992-03-29 Ibm Israel Partitioning method for e-beam lithography
JP2974821B2 (ja) 1991-06-19 1999-11-10 沖電気工業株式会社 パターン形成方法
DE69208413T2 (de) 1991-08-22 1996-11-14 Kla Instr Corp Gerät zur automatischen Prüfung von Photomaske
US5563702A (en) * 1991-08-22 1996-10-08 Kla Instruments Corporation Automated photomask inspection apparatus and method
US5242770A (en) 1992-01-16 1993-09-07 Microunity Systems Engineering, Inc. Mask for photolithography
US5326659A (en) 1992-03-05 1994-07-05 Regents Of The University Of California Method for making masks
DE69319901T2 (de) 1992-04-06 1999-03-25 Microunity Systems Eng Methode zur herstellung eines lithographischen musters in einem verfahren zur herstellung von halbleitervorrichtungen
JP3730263B2 (ja) * 1992-05-27 2005-12-21 ケーエルエー・インストルメンツ・コーポレーション 荷電粒子ビームを用いた自動基板検査の装置及び方法
US5282140A (en) 1992-06-24 1994-01-25 Intel Corporation Particle flux shadowing for three-dimensional topography simulation
US5256505A (en) 1992-08-21 1993-10-26 Microunity Systems Engineering Lithographical mask for controlling the dimensions of resist patterns
US5538815A (en) 1992-09-14 1996-07-23 Kabushiki Kaisha Toshiba Method for designing phase-shifting masks with automatization capability
EP0608657A1 (de) 1993-01-29 1994-08-03 International Business Machines Corporation Vorrichtung und Verfahren zur Verarbeitung von Formdaten zur Korrektur von Streveffekten
JPH0728226A (ja) * 1993-04-30 1995-01-31 Internatl Business Mach Corp <Ibm> 領域的イメージを測定する装置及び方法
US5533148A (en) 1993-09-30 1996-07-02 International Business Machines Corporation Method for restructuring physical design images into hierarchical data models
US5424154A (en) 1993-12-10 1995-06-13 Intel Corporation Lithographic emhancement method and apparatus for randomly spaced structures
US5447810A (en) 1994-02-09 1995-09-05 Microunity Systems Engineering, Inc. Masks for improved lithographic patterning for off-axis illumination lithography
GB2291219B (en) 1994-07-05 1998-07-01 Nec Corp Photo-mask fabrication and use
US5573890A (en) 1994-07-18 1996-11-12 Advanced Micro Devices, Inc. Method of optical lithography using phase shift masking
US5538833A (en) 1994-08-03 1996-07-23 International Business Machines Corporation High resolution phase edge lithography without the need for a trim mask
JPH08297692A (ja) 1994-09-16 1996-11-12 Mitsubishi Electric Corp 光近接補正装置及び方法並びにパタン形成方法
JP3964469B2 (ja) 1994-11-08 2007-08-22 株式会社東芝 形状シミュレーション方法
US5532090A (en) 1995-03-01 1996-07-02 Intel Corporation Method and apparatus for enhanced contact and via lithography
JP3409493B2 (ja) 1995-03-13 2003-05-26 ソニー株式会社 マスクパターンの補正方法および補正装置
US5553273A (en) 1995-04-17 1996-09-03 International Business Machines Corporation Vertex minimization in a smart optical proximity correction system
US5657235A (en) 1995-05-03 1997-08-12 International Business Machines Corporation Continuous scale optical proximity correction by mask maker dose modulation
US5663893A (en) 1995-05-03 1997-09-02 Microunity Systems Engineering, Inc. Method for generating proximity correction features for a lithographic mask pattern
JP3331822B2 (ja) * 1995-07-17 2002-10-07 ソニー株式会社 マスクパターン補正方法とそれを用いたマスク、露光方法および半導体装置
US5825482A (en) 1995-09-29 1998-10-20 Kla-Tencor Corporation Surface inspection system with misregistration error correction and adaptive illumination
DE69634089T2 (de) 1995-10-02 2005-12-08 Kla-Tencor Corp., San Jose Verbesserung der ausrichtung von inspektionsystemen vor der bildaufnahme
JP2917879B2 (ja) 1995-10-31 1999-07-12 日本電気株式会社 フォトマスク及びその製造方法
JP3469422B2 (ja) 1996-02-23 2003-11-25 株式会社東芝 荷電ビーム描画方法及び描画装置
US5705301A (en) 1996-02-27 1998-01-06 Lsi Logic Corporation Performing optical proximity correction with the aid of design rule checkers
US5801954A (en) 1996-04-24 1998-09-01 Micron Technology, Inc. Process for designing and checking a mask layout
US5805290A (en) 1996-05-02 1998-09-08 International Business Machines Corporation Method of optical metrology of unresolved pattern arrays
JP2776416B2 (ja) 1996-05-07 1998-07-16 日本電気株式会社 レチクル外観検査装置
US5862058A (en) 1996-05-16 1999-01-19 International Business Machines Corporation Optical proximity correction method and system
US5707765A (en) 1996-05-28 1998-01-13 Microunity Systems Engineering, Inc. Photolithography mask using serifs and method thereof
US5740068A (en) 1996-05-30 1998-04-14 International Business Machines Corporation Fidelity enhancement of lithographic and reactive-ion-etched images by optical proximity correction
US5849440A (en) 1996-07-02 1998-12-15 Motorola, Inc. Process for producing and inspecting a lithographic reticle and fabricating semiconductor devices using same
US5795688A (en) * 1996-08-14 1998-08-18 Micron Technology, Inc. Process for detecting defects in photomasks through aerial image comparisons
US6076465A (en) 1996-09-20 2000-06-20 Kla-Tencor Corporation System and method for determining reticle defect printability
US5807649A (en) * 1996-10-31 1998-09-15 International Business Machines Corporation Lithographic patterning method and mask set therefor with light field trim mask
US5917588A (en) 1996-11-04 1999-06-29 Kla-Tencor Corporation Automated specimen inspection system for and method of distinguishing features or anomalies under either bright field or dark field illumination
US5804340A (en) 1996-12-23 1998-09-08 Lsi Logic Corporation Photomask inspection method and inspection tape therefor
US5978501A (en) * 1997-01-03 1999-11-02 International Business Machines Corporation Adaptive inspection method and system
US5847959A (en) 1997-01-28 1998-12-08 Etec Systems, Inc. Method and apparatus for run-time correction of proximity effects in pattern generation
JP3750270B2 (ja) 1997-04-21 2006-03-01 凸版印刷株式会社 フォトマスク欠陥解析装置および欠陥解析方法
JP3750272B2 (ja) 1997-04-30 2006-03-01 凸版印刷株式会社 フォトマスク欠陥解析装置および欠陥解析方法ならびに該欠陥解析プログラムを記録した記録媒体
US6078738A (en) 1997-05-08 2000-06-20 Lsi Logic Corporation Comparing aerial image to SEM of photoresist or substrate pattern for masking process characterization
US6016357A (en) * 1997-06-16 2000-01-18 International Business Machines Corporation Feedback method to repair phase shift masks
US6757645B2 (en) 1997-09-17 2004-06-29 Numerical Technologies, Inc. Visual inspection and verification system
US7107571B2 (en) 1997-09-17 2006-09-12 Synopsys, Inc. Visual analysis and verification system using advanced tools
US6009251A (en) 1997-09-30 1999-12-28 Synopsys, Inc. Method and system for layout verification of an integrated circuit design with reusable subdesigns
US6011911A (en) 1997-09-30 2000-01-04 Synopsys, Inc. Layout overlap detection with selective flattening in computer implemented integrated circuit design
US6009250A (en) 1997-09-30 1999-12-28 Synopsys, Inc. Selective flattening in layout areas in computer implemented integrated circuit design
US5965306A (en) * 1997-10-15 1999-10-12 International Business Machines Corporation Method of determining the printability of photomask defects
US6081658A (en) 1997-12-31 2000-06-27 Avant! Corporation Proximity correction system for wafer lithography
US6282309B1 (en) * 1998-05-29 2001-08-28 Kla-Tencor Corporation Enhanced sensitivity automated photomask inspection system
US6529621B1 (en) 1998-12-17 2003-03-04 Kla-Tencor Mechanisms for making and inspecting reticles
US6301697B1 (en) 1999-04-30 2001-10-09 Nicolas B. Cobb Streamlined IC mask layout optical and process correction through correction reuse
US6467076B1 (en) 1999-04-30 2002-10-15 Nicolas Bailey Cobb Method and apparatus for submicron IC design
US6249904B1 (en) 1999-04-30 2001-06-19 Nicolas Bailey Cobb Method and apparatus for submicron IC design using edge fragment tagging to correct edge placement distortion

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KR20010024114A (ko) 2001-03-26
US20040243320A1 (en) 2004-12-02
WO1999014706A2 (en) 1999-03-25
WO1999014706A3 (en) 1999-05-06
US6757645B2 (en) 2004-06-29
JP2001516898A (ja) 2001-10-02
EP1012779A2 (de) 2000-06-28
US7523027B2 (en) 2009-04-21
AU8780998A (en) 1999-04-05
US20020019729A1 (en) 2002-02-14

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