DE69901115T2 - Verfahren zur herstellung fehlerfreier siliziumkristalle von willkürlichem grossen durchmesser - Google Patents

Verfahren zur herstellung fehlerfreier siliziumkristalle von willkürlichem grossen durchmesser

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Publication number
DE69901115T2
DE69901115T2 DE69901115T DE69901115T DE69901115T2 DE 69901115 T2 DE69901115 T2 DE 69901115T2 DE 69901115 T DE69901115 T DE 69901115T DE 69901115 T DE69901115 T DE 69901115T DE 69901115 T2 DE69901115 T2 DE 69901115T2
Authority
DE
Germany
Prior art keywords
large diameter
free silicon
silicon crystals
producing error
arbitrary large
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69901115T
Other languages
English (en)
Other versions
DE69901115D1 (de
Inventor
J Falster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Application granted granted Critical
Publication of DE69901115D1 publication Critical patent/DE69901115D1/de
Publication of DE69901115T2 publication Critical patent/DE69901115T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/106—Seed pulling including sealing means details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
DE69901115T 1998-06-26 1999-06-25 Verfahren zur herstellung fehlerfreier siliziumkristalle von willkürlichem grossen durchmesser Expired - Lifetime DE69901115T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US9072398P 1998-06-26 1998-06-26
US10408798P 1998-10-14 1998-10-14
US11762399P 1999-01-28 1999-01-28
PCT/US1999/014285 WO2000000674A2 (en) 1998-06-26 1999-06-25 Process for growth of defect free silicon crystals of arbitrarily large diameters

Publications (2)

Publication Number Publication Date
DE69901115D1 DE69901115D1 (de) 2002-05-02
DE69901115T2 true DE69901115T2 (de) 2002-12-19

Family

ID=27376642

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69901115T Expired - Lifetime DE69901115T2 (de) 1998-06-26 1999-06-25 Verfahren zur herstellung fehlerfreier siliziumkristalle von willkürlichem grossen durchmesser

Country Status (8)

Country Link
US (3) US6328795B2 (de)
EP (1) EP1090166B1 (de)
JP (1) JP2003517412A (de)
KR (1) KR20010041957A (de)
CN (1) CN1326518A (de)
DE (1) DE69901115T2 (de)
TW (1) TW473564B (de)
WO (1) WO2000000674A2 (de)

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US10588790B2 (en) 2015-03-18 2020-03-17 The Procter & Gamble Company Absorbent article with leg cuffs
BR112017019872A2 (pt) 2015-03-18 2018-05-29 The Procter & Gamble Company artigo absorvente com punhos para as pernas
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BR112017019874A2 (pt) 2015-03-18 2018-05-29 Procter & Gamble artigo absorvente com braçadeiras para as pernas
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US10716716B2 (en) 2015-03-18 2020-07-21 The Procter & Gamble Company Absorbent article with leg cuffs
CA2980146A1 (en) 2015-03-18 2016-09-22 The Procter & Gamble Company Absorbent article with waist gasketing element and leg cuffs
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CN107427403B (zh) 2015-03-18 2020-10-20 宝洁公司 具有腰衬圈元件和腿箍的吸收制品
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JP6786905B2 (ja) * 2016-06-27 2020-11-18 株式会社Sumco シリコン単結晶の製造方法
JP6484762B2 (ja) * 2016-07-06 2019-03-13 株式会社トクヤマ 単結晶シリコン板状体およびその製造方法
JP2018147193A (ja) * 2017-03-03 2018-09-20 万明 福岡 店舗設備
KR20210150510A (ko) 2019-04-11 2021-12-10 글로벌웨이퍼스 씨오., 엘티디. 말기 본체 길이에서 감소된 왜곡을 갖는 잉곳을 준비하기 위한 프로세스
JP2022529451A (ja) 2019-04-18 2022-06-22 グローバルウェーハズ カンパニー リミテッド 連続チョクラルスキー法を用いる単結晶シリコンインゴットの成長方法
CN111850675A (zh) * 2019-04-30 2020-10-30 上海新昇半导体科技有限公司 一种半导体晶体生长装置和方法
JP2022548592A (ja) 2019-09-13 2022-11-21 グローバルウェーハズ カンパニー リミテッド 連続チョクラルスキー法を用いる窒素ドープ単結晶シリコンインゴットの成長方法およびこの方法により成長させた単結晶シリコンインゴット
CN110904504B (zh) * 2019-12-03 2022-02-08 西安奕斯伟材料科技有限公司 一种拉晶炉及单晶硅棒的制备方法
CN110965118B (zh) * 2019-12-25 2022-04-15 西安奕斯伟材料科技有限公司 一种导流筒装置和拉晶炉

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US6093913A (en) 1998-06-05 2000-07-25 Memc Electronic Materials, Inc Electrical heater for crystal growth apparatus with upper sections producing increased heating power compared to lower sections
JP2003517412A (ja) * 1998-06-26 2003-05-27 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 任意に大きい直径を有する無欠陥シリコン結晶の成長方法
JP2002524845A (ja) 1998-09-02 2002-08-06 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 欠陥密度が低い単結晶シリコンから得られるシリコン・オン・インシュレーター構造体

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WO2000000674A3 (en) 2002-10-10
US6562123B2 (en) 2003-05-13
DE69901115D1 (de) 2002-05-02
CN1326518A (zh) 2001-12-12
EP1090166A1 (de) 2001-04-11
KR20010041957A (ko) 2001-05-25
WO2000000674A9 (en) 2000-03-30
TW473564B (en) 2002-01-21
WO2000000674A2 (en) 2000-01-06
US20020092460A1 (en) 2002-07-18
US6913647B2 (en) 2005-07-05
US20010008114A1 (en) 2001-07-19
US20040003770A1 (en) 2004-01-08
EP1090166B1 (de) 2002-03-27
JP2003517412A (ja) 2003-05-27

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