DE69902539T2 - Suspension zum chemisch-mechanischen polieren von kupfer/tantalum-substraten - Google Patents

Suspension zum chemisch-mechanischen polieren von kupfer/tantalum-substraten

Info

Publication number
DE69902539T2
DE69902539T2 DE69902539T DE69902539T DE69902539T2 DE 69902539 T2 DE69902539 T2 DE 69902539T2 DE 69902539 T DE69902539 T DE 69902539T DE 69902539 T DE69902539 T DE 69902539T DE 69902539 T2 DE69902539 T2 DE 69902539T2
Authority
DE
Germany
Prior art keywords
suspension
copper
chemical
mechanical polishing
tantalum substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69902539T
Other languages
English (en)
Other versions
DE69902539D1 (de
Inventor
Brusic Kaufman
C Kistler
Shumin Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials Inc
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of DE69902539D1 publication Critical patent/DE69902539D1/de
Application granted granted Critical
Publication of DE69902539T2 publication Critical patent/DE69902539T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
DE69902539T 1998-06-26 1999-06-25 Suspension zum chemisch-mechanischen polieren von kupfer/tantalum-substraten Expired - Lifetime DE69902539T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/105,065 US6217416B1 (en) 1998-06-26 1998-06-26 Chemical mechanical polishing slurry useful for copper/tantalum substrates
PCT/US1999/014556 WO2000000561A1 (en) 1998-06-26 1999-06-25 Chemical mechanical polishing slurry useful for copper/tantalum substrates

Publications (2)

Publication Number Publication Date
DE69902539D1 DE69902539D1 (de) 2002-09-19
DE69902539T2 true DE69902539T2 (de) 2002-12-19

Family

ID=22303862

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69902539T Expired - Lifetime DE69902539T2 (de) 1998-06-26 1999-06-25 Suspension zum chemisch-mechanischen polieren von kupfer/tantalum-substraten

Country Status (13)

Country Link
US (2) US6217416B1 (de)
EP (1) EP1090083B1 (de)
JP (2) JP4044287B2 (de)
KR (1) KR100491061B1 (de)
CN (1) CN1174063C (de)
AU (1) AU4723499A (de)
CA (1) CA2335034A1 (de)
DE (1) DE69902539T2 (de)
ID (1) ID27536A (de)
IL (1) IL140302A0 (de)
MY (1) MY117693A (de)
TW (1) TW585899B (de)
WO (1) WO2000000561A1 (de)

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CN1174063C (zh) 2004-11-03
CN1312843A (zh) 2001-09-12
DE69902539D1 (de) 2002-09-19
US6447371B2 (en) 2002-09-10
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JP2002519471A (ja) 2002-07-02
KR20010053167A (ko) 2001-06-25
AU4723499A (en) 2000-01-17
WO2000000561A1 (en) 2000-01-06
US6217416B1 (en) 2001-04-17
US20010041507A1 (en) 2001-11-15
EP1090083A1 (de) 2001-04-11
KR100491061B1 (ko) 2005-05-24
EP1090083B1 (de) 2002-08-14
CA2335034A1 (en) 2000-01-06
IL140302A0 (en) 2002-02-10
JP5032214B2 (ja) 2012-09-26
ID27536A (id) 2001-04-12
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MY117693A (en) 2004-07-31
JP4044287B2 (ja) 2008-02-06

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