US6614529B1
(en)
*
|
1992-12-28 |
2003-09-02 |
Applied Materials, Inc. |
In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
|
KR100487590B1
(ko)
*
|
1995-08-21 |
2005-08-04 |
가부시키가이샤 에바라 세이사꾸쇼 |
폴리싱장치
|
US6413156B1
(en)
*
|
1996-05-16 |
2002-07-02 |
Ebara Corporation |
Method and apparatus for polishing workpiece
|
JP2000315665A
(ja)
|
1999-04-29 |
2000-11-14 |
Ebara Corp |
研磨方法及び装置
|
US6595831B1
(en)
|
1996-05-16 |
2003-07-22 |
Ebara Corporation |
Method for polishing workpieces using fixed abrasives
|
US8092707B2
(en)
|
1997-04-30 |
2012-01-10 |
3M Innovative Properties Company |
Compositions and methods for modifying a surface suited for semiconductor fabrication
|
US6194317B1
(en)
*
|
1998-04-30 |
2001-02-27 |
3M Innovative Properties Company |
Method of planarizing the upper surface of a semiconductor wafer
|
TW405158B
(en)
|
1997-09-17 |
2000-09-11 |
Ebara Corp |
Plating apparatus for semiconductor wafer processing
|
US6110011A
(en)
|
1997-11-10 |
2000-08-29 |
Applied Materials, Inc. |
Integrated electrodeposition and chemical-mechanical polishing tool
|
US6336845B1
(en)
|
1997-11-12 |
2002-01-08 |
Lam Research Corporation |
Method and apparatus for polishing semiconductor wafers
|
WO1999055493A1
(fr)
*
|
1998-04-28 |
1999-11-04 |
Ebara Corporation |
Disque a polir et meuler et procede de polissage d'un substrat avec ce disque a meuler
|
US5897426A
(en)
*
|
1998-04-24 |
1999-04-27 |
Applied Materials, Inc. |
Chemical mechanical polishing with multiple polishing pads
|
JP3132468B2
(ja)
*
|
1998-05-20 |
2001-02-05 |
日本電気株式会社 |
半導体ウェハ研磨装置及びその研磨方法
|
US6551174B1
(en)
*
|
1998-09-25 |
2003-04-22 |
Applied Materials, Inc. |
Supplying slurry to a polishing pad in a chemical mechanical polishing system
|
US6863593B1
(en)
*
|
1998-11-02 |
2005-03-08 |
Applied Materials, Inc. |
Chemical mechanical polishing a substrate having a filler layer and a stop layer
|
US6086460A
(en)
|
1998-11-09 |
2000-07-11 |
Lam Research Corporation |
Method and apparatus for conditioning a polishing pad used in chemical mechanical planarization
|
US6165052A
(en)
*
|
1998-11-16 |
2000-12-26 |
Taiwan Semiconductor Manufacturing Company |
Method and apparatus for chemical/mechanical planarization (CMP) of a semiconductor substrate having shallow trench isolation
|
US6165058A
(en)
*
|
1998-12-09 |
2000-12-26 |
Applied Materials, Inc. |
Carrier head for chemical mechanical polishing
|
US6350176B1
(en)
*
|
1999-02-01 |
2002-02-26 |
The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration |
High quality optically polished aluminum mirror and process for producing
|
US6475070B1
(en)
*
|
1999-02-04 |
2002-11-05 |
Applied Materials, Inc. |
Chemical mechanical polishing with a moving polishing sheet
|
US6244935B1
(en)
*
|
1999-02-04 |
2001-06-12 |
Applied Materials, Inc. |
Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet
|
US6491570B1
(en)
|
1999-02-25 |
2002-12-10 |
Applied Materials, Inc. |
Polishing media stabilizer
|
US6354922B1
(en)
|
1999-08-20 |
2002-03-12 |
Ebara Corporation |
Polishing apparatus
|
US6358128B1
(en)
*
|
1999-03-05 |
2002-03-19 |
Ebara Corporation |
Polishing apparatus
|
KR20010039590A
(ko)
*
|
1999-04-29 |
2001-05-15 |
마에다 시게루 |
작업대상물을 폴리싱하는 방법 및 장치
|
US6261157B1
(en)
*
|
1999-05-25 |
2001-07-17 |
Applied Materials, Inc. |
Selective damascene chemical mechanical polishing
|
US6203404B1
(en)
|
1999-06-03 |
2001-03-20 |
Micron Technology, Inc. |
Chemical mechanical polishing methods
|
JP2001007064A
(ja)
*
|
1999-06-17 |
2001-01-12 |
Sumitomo Metal Ind Ltd |
半導体ウエーハの研削方法
|
US6436302B1
(en)
*
|
1999-08-23 |
2002-08-20 |
Applied Materials, Inc. |
Post CU CMP polishing for reduced defects
|
US6692339B1
(en)
*
|
1999-11-05 |
2004-02-17 |
Strasbaugh |
Combined chemical mechanical planarization and cleaning
|
US6379223B1
(en)
*
|
1999-11-29 |
2002-04-30 |
Applied Materials, Inc. |
Method and apparatus for electrochemical-mechanical planarization
|
US6626744B1
(en)
|
1999-12-17 |
2003-09-30 |
Applied Materials, Inc. |
Planarization system with multiple polishing pads
|
US6431959B1
(en)
*
|
1999-12-20 |
2002-08-13 |
Lam Research Corporation |
System and method of defect optimization for chemical mechanical planarization of polysilicon
|
US7041599B1
(en)
|
1999-12-21 |
2006-05-09 |
Applied Materials Inc. |
High through-put Cu CMP with significantly reduced erosion and dishing
|
US6294470B1
(en)
|
1999-12-22 |
2001-09-25 |
International Business Machines Corporation |
Slurry-less chemical-mechanical polishing
|
US6358850B1
(en)
|
1999-12-23 |
2002-03-19 |
International Business Machines Corporation |
Slurry-less chemical-mechanical polishing of oxide materials
|
KR100718737B1
(ko)
*
|
2000-01-17 |
2007-05-15 |
가부시키가이샤 에바라 세이사꾸쇼 |
폴리싱 장치
|
US6966820B1
(en)
|
2000-01-27 |
2005-11-22 |
The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration |
High quality optically polished aluminum mirror and process for producing
|
US6340326B1
(en)
|
2000-01-28 |
2002-01-22 |
Lam Research Corporation |
System and method for controlled polishing and planarization of semiconductor wafers
|
US6705930B2
(en)
|
2000-01-28 |
2004-03-16 |
Lam Research Corporation |
System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques
|
US6402591B1
(en)
*
|
2000-03-31 |
2002-06-11 |
Lam Research Corporation |
Planarization system for chemical-mechanical polishing
|
US6428394B1
(en)
|
2000-03-31 |
2002-08-06 |
Lam Research Corporation |
Method and apparatus for chemical mechanical planarization and polishing of semiconductor wafers using a continuous polishing member feed
|
US6626743B1
(en)
|
2000-03-31 |
2003-09-30 |
Lam Research Corporation |
Method and apparatus for conditioning a polishing pad
|
US6616801B1
(en)
|
2000-03-31 |
2003-09-09 |
Lam Research Corporation |
Method and apparatus for fixed-abrasive substrate manufacturing and wafer polishing in a single process path
|
US6261959B1
(en)
|
2000-03-31 |
2001-07-17 |
Lam Research Corporation |
Method and apparatus for chemically-mechanically polishing semiconductor wafers
|
KR100737879B1
(ko)
*
|
2000-04-24 |
2007-07-10 |
주식회사 사무코 |
반도체 웨이퍼의 제조방법
|
US6387289B1
(en)
*
|
2000-05-04 |
2002-05-14 |
Micron Technology, Inc. |
Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
|
JP2001326201A
(ja)
*
|
2000-05-16 |
2001-11-22 |
Ebara Corp |
ポリッシング装置
|
US20020023715A1
(en)
*
|
2000-05-26 |
2002-02-28 |
Norio Kimura |
Substrate polishing apparatus and substrate polishing mehod
|
US7048607B1
(en)
|
2000-05-31 |
2006-05-23 |
Applied Materials |
System and method for chemical mechanical planarization
|
US6361414B1
(en)
|
2000-06-30 |
2002-03-26 |
Lam Research Corporation |
Apparatus and method for conditioning a fixed abrasive polishing pad in a chemical mechanical planarization process
|
US6435952B1
(en)
|
2000-06-30 |
2002-08-20 |
Lam Research Corporation |
Apparatus and method for qualifying a chemical mechanical planarization process
|
US6495464B1
(en)
*
|
2000-06-30 |
2002-12-17 |
Lam Research Corporation |
Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool
|
US6500056B1
(en)
|
2000-06-30 |
2002-12-31 |
Lam Research Corporation |
Linear reciprocating disposable belt polishing method and apparatus
|
US6520841B2
(en)
|
2000-07-10 |
2003-02-18 |
Applied Materials, Inc. |
Apparatus and methods for chemical mechanical polishing with an incrementally advanceable polishing sheet
|
US6419559B1
(en)
|
2000-07-10 |
2002-07-16 |
Applied Materials, Inc. |
Using a purge gas in a chemical mechanical polishing apparatus with an incrementally advanceable polishing sheet
|
US6561884B1
(en)
*
|
2000-08-29 |
2003-05-13 |
Applied Materials, Inc. |
Web lift system for chemical mechanical planarization
|
US6793565B1
(en)
*
|
2000-11-03 |
2004-09-21 |
Speedfam-Ipec Corporation |
Orbiting indexable belt polishing station for chemical mechanical polishing
|
US6592439B1
(en)
|
2000-11-10 |
2003-07-15 |
Applied Materials, Inc. |
Platen for retaining polishing material
|
US20020072296A1
(en)
|
2000-11-29 |
2002-06-13 |
Muilenburg Michael J. |
Abrasive article having a window system for polishing wafers, and methods
|
US6478659B2
(en)
*
|
2000-12-13 |
2002-11-12 |
Promos Technologies, Inc. |
Chemical mechanical polishing method for slurry free fixed abrasive pads
|
US6554688B2
(en)
|
2001-01-04 |
2003-04-29 |
Lam Research Corporation |
Method and apparatus for conditioning a polishing pad with sonic energy
|
US6875091B2
(en)
|
2001-01-04 |
2005-04-05 |
Lam Research Corporation |
Method and apparatus for conditioning a polishing pad with sonic energy
|
US6620027B2
(en)
*
|
2001-01-09 |
2003-09-16 |
Applied Materials Inc. |
Method and apparatus for hard pad polishing
|
US6752698B1
(en)
|
2001-03-19 |
2004-06-22 |
Lam Research Corporation |
Method and apparatus for conditioning fixed-abrasive polishing pads
|
US6887136B2
(en)
*
|
2001-05-09 |
2005-05-03 |
Applied Materials, Inc. |
Apparatus and methods for multi-step chemical mechanical polishing
|
US6767427B2
(en)
*
|
2001-06-07 |
2004-07-27 |
Lam Research Corporation |
Apparatus and method for conditioning polishing pad in a chemical mechanical planarization process
|
US6485355B1
(en)
|
2001-06-22 |
2002-11-26 |
International Business Machines Corporation |
Method to increase removal rate of oxide using fixed-abrasive
|
US6790768B2
(en)
|
2001-07-11 |
2004-09-14 |
Applied Materials Inc. |
Methods and apparatus for polishing substrates comprising conductive and dielectric materials with reduced topographical defects
|
US7104869B2
(en)
*
|
2001-07-13 |
2006-09-12 |
Applied Materials, Inc. |
Barrier removal at low polish pressure
|
US7008554B2
(en)
|
2001-07-13 |
2006-03-07 |
Applied Materials, Inc. |
Dual reduced agents for barrier removal in chemical mechanical polishing
|
US6821881B2
(en)
*
|
2001-07-25 |
2004-11-23 |
Applied Materials, Inc. |
Method for chemical mechanical polishing of semiconductor substrates
|
US6503131B1
(en)
|
2001-08-16 |
2003-01-07 |
Applied Materials, Inc. |
Integrated platen assembly for a chemical mechanical planarization system
|
JP3530158B2
(ja)
*
|
2001-08-21 |
2004-05-24 |
沖電気工業株式会社 |
半導体装置及びその製造方法
|
WO2003018256A1
(en)
*
|
2001-08-31 |
2003-03-06 |
Koninklijke Philips Electronics N.V. |
Method and apparatus for chemical mechanical planarization end-o f-polish optimization
|
US6645052B2
(en)
|
2001-10-26 |
2003-11-11 |
Lam Research Corporation |
Method and apparatus for controlling CMP pad surface finish
|
US6841480B2
(en)
*
|
2002-02-04 |
2005-01-11 |
Infineon Technologies Ag |
Polyelectrolyte dispensing polishing pad, production thereof and method of polishing a substrate
|
US6943114B2
(en)
*
|
2002-02-28 |
2005-09-13 |
Infineon Technologies Ag |
Integration scheme for metal gap fill, with fixed abrasive CMP
|
US7131889B1
(en)
*
|
2002-03-04 |
2006-11-07 |
Micron Technology, Inc. |
Method for planarizing microelectronic workpieces
|
TWI295950B
(en)
*
|
2002-10-03 |
2008-04-21 |
Applied Materials Inc |
Method for reducing delamination during chemical mechanical polishing
|
US7063597B2
(en)
|
2002-10-25 |
2006-06-20 |
Applied Materials |
Polishing processes for shallow trench isolation substrates
|
US6908366B2
(en)
*
|
2003-01-10 |
2005-06-21 |
3M Innovative Properties Company |
Method of using a soft subpad for chemical mechanical polishing
|
JP2006513573A
(ja)
|
2003-01-10 |
2006-04-20 |
スリーエム イノベイティブ プロパティズ カンパニー |
化学的機械的平坦化用途向けのパッド構成体
|
JP2004327561A
(ja)
*
|
2003-04-22 |
2004-11-18 |
Ebara Corp |
基板処理方法及び基板処理装置
|
KR101108024B1
(ko)
*
|
2003-06-03 |
2012-01-25 |
넥스플래너 코퍼레이션 |
화학 기계적 평탄화를 위한 기능적으로 그레이딩된 패드의합성
|
USPP17182P3
(en)
*
|
2003-10-02 |
2006-11-07 |
Plantas De Navarra S.A. |
Peach tree plant named ‘Plawhite 5’
|
US20060021974A1
(en)
*
|
2004-01-29 |
2006-02-02 |
Applied Materials, Inc. |
Method and composition for polishing a substrate
|
US7390744B2
(en)
*
|
2004-01-29 |
2008-06-24 |
Applied Materials, Inc. |
Method and composition for polishing a substrate
|
US8403727B1
(en)
*
|
2004-03-31 |
2013-03-26 |
Lam Research Corporation |
Pre-planarization system and method
|
US20050227590A1
(en)
*
|
2004-04-09 |
2005-10-13 |
Chien-Min Sung |
Fixed abrasive tools and associated methods
|
US20060169674A1
(en)
*
|
2005-01-28 |
2006-08-03 |
Daxin Mao |
Method and composition for polishing a substrate
|
TW200727356A
(en)
*
|
2005-01-28 |
2007-07-16 |
Applied Materials Inc |
Tungsten electroprocessing
|
DE102005004384A1
(de)
*
|
2005-01-31 |
2006-08-10 |
Advanced Micro Devices, Inc., Sunnyvale |
Verfahren zur Herstellung einer definierten Vertiefung in einer Damaszener-Struktur unter Verwendung eines CMP Prozesses und eine Damaszener-Struktur
|
US7297632B2
(en)
*
|
2005-03-17 |
2007-11-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Scratch reduction for chemical mechanical polishing
|
US8062096B2
(en)
*
|
2005-06-30 |
2011-11-22 |
Cabot Microelectronics Corporation |
Use of CMP for aluminum mirror and solar cell fabrication
|
US7435162B2
(en)
*
|
2005-10-24 |
2008-10-14 |
3M Innovative Properties Company |
Polishing fluids and methods for CMP
|
US7297047B2
(en)
*
|
2005-12-01 |
2007-11-20 |
Applied Materials, Inc. |
Bubble suppressing flow controller with ultrasonic flow meter
|
JP2007258240A
(ja)
*
|
2006-03-20 |
2007-10-04 |
Tokyo Electron Ltd |
表面処理方法
|
US20080268227A1
(en)
*
|
2007-04-30 |
2008-10-30 |
Chung-Chih Feng |
Complex polishing pad and method for making the same
|
DE102007035266B4
(de)
*
|
2007-07-27 |
2010-03-25 |
Siltronic Ag |
Verfahren zum Polieren eines Substrates aus Silicium oder einer Legierung aus Silicium und Germanium
|
TWI446425B
(zh)
*
|
2007-08-29 |
2014-07-21 |
Applied Materials Inc |
高生產量及低表面形貌的銅化學機械研磨製程
|
US20100022167A1
(en)
*
|
2008-07-25 |
2010-01-28 |
Supfina Grieshaber Gmbh & Co. Kg |
Superfinish Machine with an Endless Polishing Band and Method for Operating a Superfinish Machine
|
DE102008053610B4
(de)
*
|
2008-10-29 |
2011-03-31 |
Siltronic Ag |
Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
|
US8211325B2
(en)
*
|
2009-05-07 |
2012-07-03 |
Applied Materials, Inc. |
Process sequence to achieve global planarity using a combination of fixed abrasive and high selectivity slurry for pre-metal dielectric CMP applications
|
DE102009025243B4
(de)
|
2009-06-17 |
2011-11-17 |
Siltronic Ag |
Verfahren zur Herstellung und Verfahren zur Bearbeitung einer Halbleiterscheibe aus Silicium
|
DE102009030292B4
(de)
*
|
2009-06-24 |
2011-12-01 |
Siltronic Ag |
Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
|
DE102009030296B4
(de)
*
|
2009-06-24 |
2013-05-08 |
Siltronic Ag |
Verfahren zur Herstellung einer epitaxierten Siliciumscheibe
|
DE102009030295B4
(de)
*
|
2009-06-24 |
2014-05-08 |
Siltronic Ag |
Verfahren zur Herstellung einer Halbleiterscheibe
|
DE102009030297B3
(de)
*
|
2009-06-24 |
2011-01-20 |
Siltronic Ag |
Verfahren zum Polieren einer Halbleiterscheibe
|
DE102009038941B4
(de)
|
2009-08-26 |
2013-03-21 |
Siltronic Ag |
Verfahren zur Herstellung einer Halbleiterscheibe
|
DE102009051007B4
(de)
*
|
2009-10-28 |
2011-12-22 |
Siltronic Ag |
Verfahren zum Polieren einer Halbleiterscheibe
|
DE102009051008B4
(de)
|
2009-10-28 |
2013-05-23 |
Siltronic Ag |
Verfahren zur Herstellung einer Halbleiterscheibe
|
DE102010005904B4
(de)
|
2010-01-27 |
2012-11-22 |
Siltronic Ag |
Verfahren zur Herstellung einer Halbleiterscheibe
|
DE102010026352A1
(de)
|
2010-05-05 |
2011-11-10 |
Siltronic Ag |
Verfahren zur gleichzeitigen beidseitigen Material abtragenden Bearbeitung einer Halbleiterscheibe
|
US20140093987A1
(en)
*
|
2012-10-02 |
2014-04-03 |
Applied Materials, Inc. |
Residue Detection with Spectrographic Sensor
|
US11705354B2
(en)
|
2020-07-10 |
2023-07-18 |
Applied Materials, Inc. |
Substrate handling systems
|