DE69906155D1 - Bearbeitungsflüssigkeit und verfahren zur modifikation von struturierten halbleiterscheiben zur herstellung von halbleitern - Google Patents

Bearbeitungsflüssigkeit und verfahren zur modifikation von struturierten halbleiterscheiben zur herstellung von halbleitern

Info

Publication number
DE69906155D1
DE69906155D1 DE69906155T DE69906155T DE69906155D1 DE 69906155 D1 DE69906155 D1 DE 69906155D1 DE 69906155 T DE69906155 T DE 69906155T DE 69906155 T DE69906155 T DE 69906155T DE 69906155 D1 DE69906155 D1 DE 69906155D1
Authority
DE
Germany
Prior art keywords
wafer
modifying
exposed
wafers
strutured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69906155T
Other languages
English (en)
Other versions
DE69906155T2 (de
Inventor
Charles Hardy
L Trice
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of DE69906155D1 publication Critical patent/DE69906155D1/de
Application granted granted Critical
Publication of DE69906155T2 publication Critical patent/DE69906155T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
DE69906155T 1999-03-10 1999-06-08 Bearbeitungsflüssigkeit und verfahren zur modifikation von struturierten halbleiterscheiben zur herstellung von halbleitern Expired - Lifetime DE69906155T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US266208 1999-03-10
US09/266,208 US6238592B1 (en) 1999-03-10 1999-03-10 Working liquids and methods for modifying structured wafers suited for semiconductor fabrication
PCT/US1999/012762 WO2000053691A1 (en) 1999-03-10 1999-06-08 Working liquids and methods for modifying structured wafers suited for semiconductor fabrication

Publications (2)

Publication Number Publication Date
DE69906155D1 true DE69906155D1 (de) 2003-04-24
DE69906155T2 DE69906155T2 (de) 2004-02-12

Family

ID=23013625

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69906155T Expired - Lifetime DE69906155T2 (de) 1999-03-10 1999-06-08 Bearbeitungsflüssigkeit und verfahren zur modifikation von struturierten halbleiterscheiben zur herstellung von halbleitern

Country Status (13)

Country Link
US (1) US6238592B1 (de)
EP (1) EP1163311B1 (de)
JP (1) JP4074434B2 (de)
KR (1) KR100577127B1 (de)
CN (1) CN1141353C (de)
AT (1) ATE234906T1 (de)
AU (1) AU4336399A (de)
BR (1) BR9917199A (de)
DE (1) DE69906155T2 (de)
HK (1) HK1043807B (de)
MY (1) MY117212A (de)
TW (1) TWI260342B (de)
WO (1) WO2000053691A1 (de)

Families Citing this family (125)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6245690B1 (en) * 1998-11-04 2001-06-12 Applied Materials, Inc. Method of improving moisture resistance of low dielectric constant films
JP4516176B2 (ja) * 1999-04-20 2010-08-04 関東化学株式会社 電子材料用基板洗浄液
US20020077037A1 (en) * 1999-05-03 2002-06-20 Tietz James V. Fixed abrasive articles
KR20010020807A (ko) * 1999-05-03 2001-03-15 조셉 제이. 스위니 고정 연마재 제품을 사전-조절하는 방법
US6419554B2 (en) * 1999-06-24 2002-07-16 Micron Technology, Inc. Fixed abrasive chemical-mechanical planarization of titanium nitride
TW501197B (en) * 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
TWI254070B (en) * 1999-08-18 2006-05-01 Jsr Corp Aqueous dispersion for chemical mechanical polishing
US6432826B1 (en) 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
US6825117B2 (en) * 1999-12-14 2004-11-30 Intel Corporation High PH slurry for chemical mechanical polishing of copper
US7041599B1 (en) * 1999-12-21 2006-05-09 Applied Materials Inc. High through-put Cu CMP with significantly reduced erosion and dishing
US6638143B2 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Ion exchange materials for chemical mechanical polishing
US6531071B1 (en) * 2000-01-04 2003-03-11 Micron Technology, Inc. Passivation for cleaning a material
US6962524B2 (en) * 2000-02-17 2005-11-08 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6537144B1 (en) 2000-02-17 2003-03-25 Applied Materials, Inc. Method and apparatus for enhanced CMP using metals having reductive properties
US6848970B2 (en) * 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US7303462B2 (en) * 2000-02-17 2007-12-04 Applied Materials, Inc. Edge bead removal by an electro polishing process
US7678245B2 (en) * 2000-02-17 2010-03-16 Applied Materials, Inc. Method and apparatus for electrochemical mechanical processing
US20040020789A1 (en) * 2000-02-17 2004-02-05 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7066800B2 (en) * 2000-02-17 2006-06-27 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
US7029365B2 (en) * 2000-02-17 2006-04-18 Applied Materials Inc. Pad assembly for electrochemical mechanical processing
US20050092621A1 (en) * 2000-02-17 2005-05-05 Yongqi Hu Composite pad assembly for electrochemical mechanical processing (ECMP)
US7670468B2 (en) 2000-02-17 2010-03-02 Applied Materials, Inc. Contact assembly and method for electrochemical mechanical processing
US6979248B2 (en) * 2002-05-07 2005-12-27 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7303662B2 (en) * 2000-02-17 2007-12-04 Applied Materials, Inc. Contacts for electrochemical processing
US7059948B2 (en) * 2000-12-22 2006-06-13 Applied Materials Articles for polishing semiconductor substrates
US7125477B2 (en) * 2000-02-17 2006-10-24 Applied Materials, Inc. Contacts for electrochemical processing
US6991528B2 (en) * 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6451697B1 (en) 2000-04-06 2002-09-17 Applied Materials, Inc. Method for abrasive-free metal CMP in passivation domain
US6710888B1 (en) * 2000-05-23 2004-03-23 Nanometrics Incorporated Method of measuring dishing
US6700670B1 (en) 2000-05-23 2004-03-02 Nanometrics Incorporated Method of measuring dishing using relative height measurements
US6653242B1 (en) 2000-06-30 2003-11-25 Applied Materials, Inc. Solution to metal re-deposition during substrate planarization
US6568290B1 (en) * 2000-08-10 2003-05-27 Nanometrics Incorporated Method of measuring dishing using relative height measurement
US7220322B1 (en) 2000-08-24 2007-05-22 Applied Materials, Inc. Cu CMP polishing pad cleaning
US6702954B1 (en) * 2000-10-19 2004-03-09 Ferro Corporation Chemical-mechanical polishing slurry and method
US6569349B1 (en) * 2000-10-23 2003-05-27 Applied Materials Inc. Additives to CMP slurry to polish dielectric films
US6524167B1 (en) 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
US6709316B1 (en) * 2000-10-27 2004-03-23 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
JP3825246B2 (ja) * 2000-11-24 2006-09-27 Necエレクトロニクス株式会社 化学的機械的研磨用スラリー
US6633389B1 (en) 2000-11-28 2003-10-14 Nanometrics Incorporated Profiling method
US20020068454A1 (en) * 2000-12-01 2002-06-06 Applied Materials, Inc. Method and composition for the removal of residual materials during substrate planarization
US6896776B2 (en) * 2000-12-18 2005-05-24 Applied Materials Inc. Method and apparatus for electro-chemical processing
US6530824B2 (en) * 2001-03-09 2003-03-11 Rodel Holdings, Inc. Method and composition for polishing by CMP
US20060169597A1 (en) * 2001-03-14 2006-08-03 Applied Materials, Inc. Method and composition for polishing a substrate
US7232514B2 (en) 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US7128825B2 (en) 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US7582564B2 (en) * 2001-03-14 2009-09-01 Applied Materials, Inc. Process and composition for conductive material removal by electrochemical mechanical polishing
US7160432B2 (en) * 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US6899804B2 (en) * 2001-12-21 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US6811680B2 (en) * 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US7323416B2 (en) * 2001-03-14 2008-01-29 Applied Materials, Inc. Method and composition for polishing a substrate
US6540935B2 (en) * 2001-04-05 2003-04-01 Samsung Electronics Co., Ltd. Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same
US7344432B2 (en) * 2001-04-24 2008-03-18 Applied Materials, Inc. Conductive pad with ion exchange membrane for electrochemical mechanical polishing
US7137879B2 (en) * 2001-04-24 2006-11-21 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6580515B1 (en) 2001-05-29 2003-06-17 Nanometrics Incorporated Surface profiling using a differential interferometer
US6783432B2 (en) 2001-06-04 2004-08-31 Applied Materials Inc. Additives for pressure sensitive polishing compositions
US6485355B1 (en) * 2001-06-22 2002-11-26 International Business Machines Corporation Method to increase removal rate of oxide using fixed-abrasive
US7008554B2 (en) * 2001-07-13 2006-03-07 Applied Materials, Inc. Dual reduced agents for barrier removal in chemical mechanical polishing
US7104869B2 (en) * 2001-07-13 2006-09-12 Applied Materials, Inc. Barrier removal at low polish pressure
US6592742B2 (en) * 2001-07-13 2003-07-15 Applied Materials Inc. Electrochemically assisted chemical polish
US6800218B2 (en) * 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
TW583731B (en) * 2001-08-23 2004-04-11 Mykrolis Corp Process, system, and liquid composition for selectively removing a metal film
US6677239B2 (en) 2001-08-24 2004-01-13 Applied Materials Inc. Methods and compositions for chemical mechanical polishing
JP4803625B2 (ja) * 2001-09-04 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20030072639A1 (en) * 2001-10-17 2003-04-17 Applied Materials, Inc. Substrate support
US6705926B2 (en) * 2001-10-24 2004-03-16 Cabot Microelectronics Corporation Boron-containing polishing system and method
JP3692067B2 (ja) * 2001-11-30 2005-09-07 株式会社東芝 銅のcmp用研磨スラリーおよびそれを用いた半導体装置の製造方法
US20070295611A1 (en) * 2001-12-21 2007-12-27 Liu Feng Q Method and composition for polishing a substrate
KR100478483B1 (ko) * 2002-10-02 2005-03-28 동부아남반도체 주식회사 반도체 소자의 제조 방법
US6821309B2 (en) * 2002-02-22 2004-11-23 University Of Florida Chemical-mechanical polishing slurry for polishing of copper or silver films
KR100442873B1 (ko) * 2002-02-28 2004-08-02 삼성전자주식회사 화학적 기계적 폴리싱 슬러리 및 이를 사용한 화학적기계적 폴리싱 방법
US6783690B2 (en) * 2002-03-25 2004-08-31 Donna M. Kologe Method of stripping silver from a printed circuit board
US20050194681A1 (en) * 2002-05-07 2005-09-08 Yongqi Hu Conductive pad with high abrasion
US20030209523A1 (en) * 2002-05-09 2003-11-13 Applied Materials, Inc. Planarization by chemical polishing for ULSI applications
CN1333444C (zh) * 2002-11-12 2007-08-22 阿科玛股份有限公司 使用磺化两性试剂的铜化学机械抛光溶液
CN100509980C (zh) * 2002-12-02 2009-07-08 阿科玛股份有限公司 用于铜化学机械平整化加工的组合物及方法
JP4267331B2 (ja) * 2003-01-14 2009-05-27 株式会社荏原製作所 基板の処理方法及びエッチング液
US7040966B2 (en) * 2003-04-16 2006-05-09 Applied Materials Carbonation of pH controlled KOH solution for improved polishing of oxide films on semiconductor wafers
US20060249482A1 (en) * 2003-05-12 2006-11-09 Peter Wrschka Chemical mechanical polishing compositions for step-ll copper line and other associated materials and method of using same
US7390429B2 (en) * 2003-06-06 2008-06-24 Applied Materials, Inc. Method and composition for electrochemical mechanical polishing processing
US20050092620A1 (en) * 2003-10-01 2005-05-05 Applied Materials, Inc. Methods and apparatus for polishing a substrate
CN1886232A (zh) * 2003-11-26 2006-12-27 3M创新有限公司 研磨工件的方法
US7186164B2 (en) * 2003-12-03 2007-03-06 Applied Materials, Inc. Processing pad assembly with zone control
US20050178666A1 (en) * 2004-01-13 2005-08-18 Applied Materials, Inc. Methods for fabrication of a polishing article
US7390744B2 (en) * 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US7323421B2 (en) * 2004-06-16 2008-01-29 Memc Electronic Materials, Inc. Silicon wafer etching process and composition
US20060030156A1 (en) * 2004-08-05 2006-02-09 Applied Materials, Inc. Abrasive conductive polishing article for electrochemical mechanical polishing
US7210988B2 (en) 2004-08-24 2007-05-01 Applied Materials, Inc. Method and apparatus for reduced wear polishing pad conditioning
JP2006080388A (ja) * 2004-09-10 2006-03-23 Nitta Haas Inc 金属研磨用組成物
WO2006039436A2 (en) * 2004-10-01 2006-04-13 Applied Materials, Inc. Pad design for electrochemical mechanical polishing
US7520968B2 (en) * 2004-10-05 2009-04-21 Applied Materials, Inc. Conductive pad design modification for better wafer-pad contact
JP2006179845A (ja) 2004-11-26 2006-07-06 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
US20060118760A1 (en) * 2004-12-03 2006-06-08 Yang Andy C Slurry composition and methods for chemical mechanical polishing
US20060196778A1 (en) * 2005-01-28 2006-09-07 Renhe Jia Tungsten electroprocessing
US20060169674A1 (en) * 2005-01-28 2006-08-03 Daxin Mao Method and composition for polishing a substrate
US7427340B2 (en) * 2005-04-08 2008-09-23 Applied Materials, Inc. Conductive pad
US20060249395A1 (en) * 2005-05-05 2006-11-09 Applied Material, Inc. Process and composition for electrochemical mechanical polishing
US20060249394A1 (en) * 2005-05-05 2006-11-09 Applied Materials, Inc. Process and composition for electrochemical mechanical polishing
US7442319B2 (en) * 2005-06-28 2008-10-28 Micron Technology, Inc. Poly etch without separate oxide decap
WO2007015551A1 (ja) * 2005-08-04 2007-02-08 Asahi Glass Company, Limited 研磨剤組成物および研磨方法
JP5026710B2 (ja) * 2005-09-02 2012-09-19 株式会社フジミインコーポレーテッド 研磨用組成物
TWI385226B (zh) * 2005-09-08 2013-02-11 羅門哈斯電子材料Cmp控股公司 用於移除聚合物阻障之研磨漿液
US7767009B2 (en) * 2005-09-14 2010-08-03 OMG Electronic Chemicals, Inc. Solution and process for improving the solderability of a metal surface
US7435162B2 (en) * 2005-10-24 2008-10-14 3M Innovative Properties Company Polishing fluids and methods for CMP
TW200720493A (en) 2005-10-31 2007-06-01 Applied Materials Inc Electrochemical method for ecmp polishing pad conditioning
KR20070088245A (ko) * 2006-02-24 2007-08-29 후지필름 가부시키가이샤 금속용 연마액
US20070232510A1 (en) * 2006-03-29 2007-10-04 Kucera Alvin A Method and composition for selectively stripping silver from a substrate
US20070254485A1 (en) * 2006-04-28 2007-11-01 Daxin Mao Abrasive composition for electrochemical mechanical polishing
CN100491072C (zh) * 2006-06-09 2009-05-27 河北工业大学 Ulsi多层铜布线化学机械抛光中碟形坑的控制方法
JP2008277723A (ja) 2007-03-30 2008-11-13 Fujifilm Corp 金属用研磨液及び研磨方法
US20080293343A1 (en) * 2007-05-22 2008-11-27 Yuchun Wang Pad with shallow cells for electrochemical mechanical processing
TWI446425B (zh) * 2007-08-29 2014-07-21 Applied Materials Inc 高生產量及低表面形貌的銅化學機械研磨製程
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
US9202709B2 (en) 2008-03-19 2015-12-01 Fujifilm Corporation Polishing liquid for metal and polishing method using the same
WO2009140622A2 (en) * 2008-05-15 2009-11-19 3M Innovative Properties Company Polishing pad with endpoint window and systems and method using the same
CN102131618A (zh) * 2008-06-26 2011-07-20 3M创新有限公司 具有多孔单元的抛光垫以及制造和使用该抛光垫的方法
CN102159361B (zh) * 2008-07-18 2014-11-05 3M创新有限公司 具有浮动单元的抛光垫以及制造和使用该抛光垫的方法
US9162340B2 (en) 2009-12-30 2015-10-20 3M Innovative Properties Company Polishing pads including phase-separated polymer blend and method of making and using the same
IL204422A0 (en) * 2010-03-11 2010-12-30 J G Systems Inc METHOD AND COMPOSITION TO ENHANCE CORROSION RESISTANCE OF THROUGH HOLE COPPER PLATED PWBs FINISHED WITH AN IMMERSION METAL COATING SUCH AS Ag OR Sn
EP2555229A4 (de) * 2010-03-29 2017-02-01 Asahi Glass Company, Limited Poliermittel, polierverfahren und verfahren zur herstellung einer integrierten halbleiterschaltung
CN102893376A (zh) * 2010-06-01 2013-01-23 应用材料公司 铜晶圆研磨的化学平坦化
US8835915B2 (en) 2010-11-22 2014-09-16 3M Innovative Properties Company Assembly and electronic devices including the same
JP6325441B2 (ja) * 2012-07-17 2018-05-16 株式会社フジミインコーポレーテッド 合金材料研磨用組成物及びそれを用いた合金材料の製造方法
US9388330B2 (en) * 2012-12-17 2016-07-12 Fuji Engineering Co., Ltd. Bag containing blasting material
US10247700B2 (en) * 2015-10-30 2019-04-02 International Business Machines Corporation Embedded noble metal electrodes in microfluidics
WO2018071285A1 (en) * 2016-10-11 2018-04-19 Fujifilm Planar Solutions, LLC Elevated temperature cmp compositions and methods for use thereof

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL149551B (nl) 1964-08-04 1976-05-17 Dow Chemical Co Werkwijze voor het reinigen en passiveren van ijzerhoudende metaaloppervlakken, waarop metallisch koper is afgezet.
US3504457A (en) 1966-07-05 1970-04-07 Geoscience Instr Corp Polishing apparatus
US3499250A (en) 1967-04-07 1970-03-10 Geoscience Instr Corp Polishing apparatus
US4512113A (en) 1982-09-23 1985-04-23 Budinger William D Workpiece holder for polishing operation
US4642221A (en) 1983-07-05 1987-02-10 Atlantic Richfield Company Method and composition for inhibiting corrosion in aqueous heat transfer systems
US4879258A (en) 1988-08-31 1989-11-07 Texas Instruments Incorporated Integrated circuit planarization by mechanical polishing
US5257478A (en) 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
MY114512A (en) * 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US5575885A (en) * 1993-12-14 1996-11-19 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing semiconductor device
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
JP3397501B2 (ja) * 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
JPH08207388A (ja) * 1995-02-03 1996-08-13 Brother Ind Ltd プリンタ
US6046110A (en) 1995-06-08 2000-04-04 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing a semiconductor device
JPH0982668A (ja) 1995-09-20 1997-03-28 Sony Corp 研磨用スラリー及びこの研磨用スラリーを用いる研磨方法
US5700383A (en) * 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
JPH09258397A (ja) * 1996-03-19 1997-10-03 Fuji Photo Film Co Ltd ハロゲン化銀感光材料
US6309560B1 (en) 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6083419A (en) 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US5897375A (en) * 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture

Also Published As

Publication number Publication date
KR100577127B1 (ko) 2006-05-10
CN1141353C (zh) 2004-03-10
HK1043807A1 (en) 2002-09-27
JP2002538284A (ja) 2002-11-12
AU4336399A (en) 2000-09-28
CN1337983A (zh) 2002-02-27
JP4074434B2 (ja) 2008-04-09
HK1043807B (zh) 2004-03-05
US6238592B1 (en) 2001-05-29
ATE234906T1 (de) 2003-04-15
WO2000053691A1 (en) 2000-09-14
EP1163311A1 (de) 2001-12-19
KR20010110655A (ko) 2001-12-13
DE69906155T2 (de) 2004-02-12
TWI260342B (en) 2006-08-21
BR9917199A (pt) 2002-01-08
MY117212A (en) 2004-05-31
EP1163311B1 (de) 2003-03-19

Similar Documents

Publication Publication Date Title
DE69906155D1 (de) Bearbeitungsflüssigkeit und verfahren zur modifikation von struturierten halbleiterscheiben zur herstellung von halbleitern
ATE327572T1 (de) Verfahren und vorrichtung zur bearbeitung von substraten
ATE254337T1 (de) Verbindung und verfahren zum selektiven ätzen eines siliziumnitrid films
MY133337A (en) Composition and method for copper chemical mechanical planarization
ATE320881T1 (de) Schleifmittel mit einem fenstersystem zum polieren von wafern und verfahren hierfür
MY127719A (en) Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
WO2000000560A3 (en) Chemical mechanical polishing slurry and method for using same
DE50100177D1 (de) Verfahren zur Oberflächenpolitur von Siliciumscheiben
ATE418420T1 (de) Verfahren zum polieren der oberfläche eines substrats
DE50104638D1 (de) Verfahren zur herstellung eines mikrofluidbauelements
KR970064824A (ko) 연마 공정 후처리용 세정용액 및 그를 이용하는 세정방법
WO2002011185A3 (en) Method of polishing a semiconductor wafer
EP0871210A3 (de) Methode zur Reduzierung der Metall-Kontaminierung von Siliziumscheiben bei der IC-Herstellung
US6632743B1 (en) Post-planarization, pre-oxide removal ozone treatment
DE3871456D1 (de) Verfahren zur wiederverwendung von silizium-basismaterial einer metall-isolator-halbleiter-(mis)-inversionsschicht-solarzelle.
DE58908255D1 (de) Verfahren zur nasschemischen Oberflächenbehandlung von Halbleiterscheiben.
EP1199740B1 (de) Ein Verfahren zum Trocknen von Siliziumsubstraten
JPH1174246A (ja) 半導体ウエハ上のウオータマーク形成を減らす方法
MY122019A (en) Method of manufacturing semiconductor wafer.
KR100867086B1 (ko) 반도체 장치 제조 방법 및 장치
KR970023786A (ko) 실리콘 온 인슐레이터(soi) 웨이퍼의 연마방법
JPS6442823A (en) Flattening of semiconductor device surface
WO2002095813A3 (en) Differential cleaning for semiconductor wafers with copper circuitry
JPS63127531A (ja) 半導体装置の製造方法
JPH031535A (ja) 半導体ウェハーの加工方法

Legal Events

Date Code Title Description
8364 No opposition during term of opposition