DE69907676T2 - Cmp suspension enthaltend einen festen katalysator - Google Patents

Cmp suspension enthaltend einen festen katalysator

Info

Publication number
DE69907676T2
DE69907676T2 DE69907676T DE69907676T DE69907676T2 DE 69907676 T2 DE69907676 T2 DE 69907676T2 DE 69907676 T DE69907676 T DE 69907676T DE 69907676 T DE69907676 T DE 69907676T DE 69907676 T2 DE69907676 T2 DE 69907676T2
Authority
DE
Germany
Prior art keywords
suspension containing
fixed catalyst
cmp suspension
cmp
catalyst
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69907676T
Other languages
English (en)
Other versions
DE69907676D1 (de
Inventor
Shumin Wang
L Mueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials Inc
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Application granted granted Critical
Publication of DE69907676D1 publication Critical patent/DE69907676D1/de
Publication of DE69907676T2 publication Critical patent/DE69907676T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
DE69907676T 1998-05-26 1999-05-25 Cmp suspension enthaltend einen festen katalysator Expired - Fee Related DE69907676T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/084,630 US6177026B1 (en) 1998-05-26 1998-05-26 CMP slurry containing a solid catalyst
PCT/US1999/011475 WO1999061540A1 (en) 1998-05-26 1999-05-25 Cmp slurry containing a solid catalyst

Publications (2)

Publication Number Publication Date
DE69907676D1 DE69907676D1 (de) 2003-06-12
DE69907676T2 true DE69907676T2 (de) 2003-11-06

Family

ID=22186212

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69907676T Expired - Fee Related DE69907676T2 (de) 1998-05-26 1999-05-25 Cmp suspension enthaltend einen festen katalysator

Country Status (11)

Country Link
US (2) US6177026B1 (de)
EP (1) EP1090082B1 (de)
JP (1) JP2002516378A (de)
KR (1) KR20010043798A (de)
CN (1) CN1306560A (de)
AU (1) AU4201699A (de)
CA (1) CA2336482A1 (de)
DE (1) DE69907676T2 (de)
ID (1) ID28712A (de)
IL (1) IL139804A0 (de)
WO (1) WO1999061540A1 (de)

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6126853A (en) * 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6435947B2 (en) * 1998-05-26 2002-08-20 Cabot Microelectronics Corporation CMP polishing pad including a solid catalyst
US6572449B2 (en) * 1998-10-06 2003-06-03 Rodel Holdings, Inc. Dewatered CMP polishing compositions and methods for using same
JP2000183003A (ja) * 1998-10-07 2000-06-30 Toshiba Corp 銅系金属用研磨組成物および半導体装置の製造方法
JP4240424B2 (ja) * 1998-10-23 2009-03-18 エルジー ディスプレイ カンパニー リミテッド エッチング剤及びこれを用いた電子機器用基板の製造方法
JP3974305B2 (ja) * 1999-06-18 2007-09-12 エルジー フィリップス エルシーディー カンパニー リミテッド エッチング剤及びこれを用いた電子機器用基板の製造方法と電子機器
US6435944B1 (en) * 1999-10-27 2002-08-20 Applied Materials, Inc. CMP slurry for planarizing metals
WO2001045900A1 (en) * 1999-12-23 2001-06-28 Rodel Holdings, Inc. Self-leveling pads and methods relating thereto
US6364744B1 (en) * 2000-02-02 2002-04-02 Agere Systems Guardian Corp. CMP system and slurry for polishing semiconductor wafers and related method
US6355075B1 (en) * 2000-02-11 2002-03-12 Fujimi Incorporated Polishing composition
US6332831B1 (en) * 2000-04-06 2001-12-25 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
US6451697B1 (en) 2000-04-06 2002-09-17 Applied Materials, Inc. Method for abrasive-free metal CMP in passivation domain
AU2001253308A1 (en) * 2000-04-11 2001-10-23 Cabot Microelectronics Corporation System for the preferential removal of silicon oxide
JP3945964B2 (ja) 2000-06-01 2007-07-18 株式会社ルネサステクノロジ 研磨剤、研磨方法及び半導体装置の製造方法
US6524168B2 (en) 2000-06-15 2003-02-25 Rodel Holdings, Inc Composition and method for polishing semiconductors
US6653242B1 (en) 2000-06-30 2003-11-25 Applied Materials, Inc. Solution to metal re-deposition during substrate planarization
US6872329B2 (en) 2000-07-28 2005-03-29 Applied Materials, Inc. Chemical mechanical polishing composition and process
US6503129B1 (en) * 2000-10-06 2003-01-07 Lam Research Corporation Activated slurry CMP system and methods for implementing the same
US6896776B2 (en) * 2000-12-18 2005-05-24 Applied Materials Inc. Method and apparatus for electro-chemical processing
WO2002062528A2 (en) * 2001-02-08 2002-08-15 Rem Technologies, Inc. Chemical mechanical machining and surface finishing
US20020119245A1 (en) * 2001-02-23 2002-08-29 Steven Verhaverbeke Method for etching electronic components containing tantalum
US20030017785A1 (en) * 2001-03-02 2003-01-23 Kazumasa Ueda Metal polish composition and polishing method
US7582564B2 (en) * 2001-03-14 2009-09-01 Applied Materials, Inc. Process and composition for conductive material removal by electrochemical mechanical polishing
US7232514B2 (en) * 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US20060169597A1 (en) * 2001-03-14 2006-08-03 Applied Materials, Inc. Method and composition for polishing a substrate
US6811680B2 (en) * 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US7323416B2 (en) * 2001-03-14 2008-01-29 Applied Materials, Inc. Method and composition for polishing a substrate
US7128825B2 (en) * 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US6899804B2 (en) * 2001-12-21 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US7160432B2 (en) * 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US6592742B2 (en) 2001-07-13 2003-07-15 Applied Materials Inc. Electrochemically assisted chemical polish
JP4823142B2 (ja) * 2001-07-30 2011-11-24 株式会社東芝 半導体装置の製造方法
JP2003113370A (ja) * 2001-07-30 2003-04-18 Toshiba Corp 化学的機械的研磨用スラリー、半導体装置の製造方法、半導体装置の製造装置、及び化学的機械的研磨用スラリーの取り扱い方法
US7077880B2 (en) * 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
KR100460312B1 (ko) * 2001-12-10 2004-12-04 제일모직주식회사 금속배선 연마용 슬러리 조성물
US7121926B2 (en) * 2001-12-21 2006-10-17 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article
US20070295611A1 (en) * 2001-12-21 2007-12-27 Liu Feng Q Method and composition for polishing a substrate
US6730592B2 (en) * 2001-12-21 2004-05-04 Micron Technology, Inc. Methods for planarization of metal-containing surfaces using halogens and halide salts
US7049237B2 (en) * 2001-12-21 2006-05-23 Micron Technology, Inc. Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases
US20030119316A1 (en) * 2001-12-21 2003-06-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using oxidizing agents
KR100445757B1 (ko) * 2001-12-28 2004-08-25 제일모직주식회사 금속배선 연마용 슬러리 조성물
KR100445759B1 (ko) * 2001-12-28 2004-08-25 제일모직주식회사 금속배선 연마용 슬러리 조성물
KR100451985B1 (ko) * 2001-12-31 2004-10-08 주식회사 하이닉스반도체 반도체소자의 화학적 기계적 연마용 슬러리 및 이를이용한 금속배선 콘택플러그 형성방법
US6830503B1 (en) 2002-01-11 2004-12-14 Cabot Microelectronics Corporation Catalyst/oxidizer-based CMP system for organic polymer films
US20030139047A1 (en) * 2002-01-24 2003-07-24 Thomas Terence M. Metal polishing slurry having a static etch inhibitor and method of formulation
US7513920B2 (en) * 2002-02-11 2009-04-07 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US20040175942A1 (en) * 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US20040217006A1 (en) * 2003-03-18 2004-11-04 Small Robert J. Residue removers for electrohydrodynamic cleaning of semiconductors
US20040232379A1 (en) * 2003-05-20 2004-11-25 Ameen Joseph G. Multi-oxidizer-based slurry for nickel hard disk planarization
US7390429B2 (en) * 2003-06-06 2008-06-24 Applied Materials, Inc. Method and composition for electrochemical mechanical polishing processing
GB2402941B (en) * 2003-06-09 2007-06-27 Kao Corp Method for manufacturing substrate
US20050022456A1 (en) * 2003-07-30 2005-02-03 Babu S. V. Polishing slurry and method for chemical-mechanical polishing of copper
US7186653B2 (en) * 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
US20050070109A1 (en) * 2003-09-30 2005-03-31 Feller A. Daniel Novel slurry for chemical mechanical polishing of metals
US20050092620A1 (en) * 2003-10-01 2005-05-05 Applied Materials, Inc. Methods and apparatus for polishing a substrate
TWI244498B (en) * 2003-11-20 2005-12-01 Eternal Chemical Co Ltd Chemical mechanical abrasive slurry and method of using the same
US7390744B2 (en) * 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
DE102004020230A1 (de) * 2004-04-22 2005-11-24 Kerr-Mcgee Pigments Gmbh Zusammesetzung für das Chemisch-Mechanische Polieren (CMP)
DE102004020213A1 (de) * 2004-04-22 2005-11-24 Kerr-Mcgee Pigments Gmbh Zusammensetzung für das Chemisch-Mechanische Polieren (CMP)
US20060030149A1 (en) * 2004-08-06 2006-02-09 Steven Leith Depositing material on photosensitive material
US7084064B2 (en) * 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
ITMI20041966A1 (it) * 2004-10-15 2005-01-15 Sea Marconi Technologies Sas "processo per la degradazione e/o detossificazione di cantaminanti chimici e biologici"
US7524347B2 (en) * 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant
US20060124026A1 (en) * 2004-12-10 2006-06-15 3M Innovative Properties Company Polishing solutions
US7052373B1 (en) * 2005-01-19 2006-05-30 Anji Microelectronics Co., Ltd. Systems and slurries for chemical mechanical polishing
WO2006081589A2 (en) * 2005-01-28 2006-08-03 Applied Materials, Inc. Tungsten electroprocessing
US20060169674A1 (en) * 2005-01-28 2006-08-03 Daxin Mao Method and composition for polishing a substrate
US7942945B1 (en) * 2005-03-28 2011-05-17 University Of South Florida CMP slurry for polymeric interlayer dielectric planarization
US7348276B2 (en) 2005-03-30 2008-03-25 Fujitsu, Limited Fabrication process of semiconductor device and polishing method
US20060219663A1 (en) * 2005-03-31 2006-10-05 Applied Materials, Inc. Metal CMP process on one or more polishing stations using slurries with oxidizers
US20060249395A1 (en) * 2005-05-05 2006-11-09 Applied Material, Inc. Process and composition for electrochemical mechanical polishing
US20060249394A1 (en) * 2005-05-05 2006-11-09 Applied Materials, Inc. Process and composition for electrochemical mechanical polishing
US7435162B2 (en) * 2005-10-24 2008-10-14 3M Innovative Properties Company Polishing fluids and methods for CMP
JP4752072B2 (ja) * 2005-11-30 2011-08-17 国立大学法人埼玉大学 研磨方法及び研磨装置
US8591763B2 (en) * 2006-03-23 2013-11-26 Cabot Microelectronics Corporation Halide anions for metal removal rate control
US7820067B2 (en) * 2006-03-23 2010-10-26 Cabot Microelectronics Corporation Halide anions for metal removal rate control
US20070254485A1 (en) * 2006-04-28 2007-11-01 Daxin Mao Abrasive composition for electrochemical mechanical polishing
US7678700B2 (en) * 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US20090056744A1 (en) * 2007-08-29 2009-03-05 Micron Technology, Inc. Wafer cleaning compositions and methods
KR100928456B1 (ko) * 2009-06-01 2009-11-25 주식회사 동진쎄미켐 이온화되지 않는 열활성 나노촉매를 포함하는 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마방법
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
CN103252710B (zh) * 2013-04-08 2016-04-20 清华大学 用于超硬材料的化学机械平坦化抛光垫及制备、抛光方法
WO2014182457A1 (en) * 2013-05-10 2014-11-13 3M Innovative Properties Company Method of depositing titania on a substrate and composite article
CN104513627B (zh) * 2014-12-22 2017-04-05 深圳市力合材料有限公司 一种集成电路铜cmp组合物及其制备方法
CN104593776B (zh) * 2014-12-24 2017-11-03 上海新安纳电子科技有限公司 一种用于钛的化学机械抛光液
US10570313B2 (en) 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
US11643599B2 (en) 2018-07-20 2023-05-09 Versum Materials Us, Llc Tungsten chemical mechanical polishing for reduced oxide erosion
US11111435B2 (en) 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
KR102422148B1 (ko) * 2020-06-12 2022-07-15 성균관대학교산학협력단 연마 조성물의 제조 방법

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3668131A (en) 1968-08-09 1972-06-06 Allied Chem Dissolution of metal with acidified hydrogen peroxide solutions
FR2604443A1 (fr) 1986-09-26 1988-04-01 Rhone Poulenc Chimie Composition de polissage a base de cerium destinee au polissage des verres organiques
US4861484A (en) * 1988-03-02 1989-08-29 Synlize, Inc. Catalytic process for degradation of organic materials in aqueous and organic fluids to produce environmentally compatible products
JPH01257563A (ja) 1988-04-08 1989-10-13 Showa Denko Kk アルミニウム磁気ディスク研磨用組成物
US4959113C1 (en) 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
US5234880A (en) * 1990-10-11 1993-08-10 Paxon Polymer Company, L.P. Polyolefin catalysts and method of preparing an olefin polymer
US5130031A (en) * 1990-11-01 1992-07-14 Sri International Method of treating aqueous liquids using light energy, ultrasonic energy, and a photocatalyst
US5264010A (en) 1992-04-27 1993-11-23 Rodel, Inc. Compositions and methods for polishing and planarizing surfaces
US5382272A (en) 1993-09-03 1995-01-17 Rodel, Inc. Activated polishing compositions
US5439551A (en) 1994-03-02 1995-08-08 Micron Technology, Inc. Chemical-mechanical polishing techniques and methods of end point detection in chemical-mechanical polishing processes
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5785868A (en) * 1995-09-11 1998-07-28 Board Of Regents, Univ. Of Texas System Method for selective separation of products at hydrothermal conditions
US5958794A (en) * 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US5948697A (en) 1996-05-23 1999-09-07 Lsi Logic Corporation Catalytic acceleration and electrical bias control of CMP processing
US5993686A (en) 1996-06-06 1999-11-30 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
US5866031A (en) * 1996-06-19 1999-02-02 Sematech, Inc. Slurry formulation for chemical mechanical polishing of metals
KR19980019046A (ko) * 1996-08-29 1998-06-05 고사이 아키오 연마용 조성물 및 이의 용도(Abrasive composition and use of the same)
KR19980024187A (ko) 1996-09-03 1998-07-06 고사이 아키오 반도체 기판상의 금속막을 연마하기 위한 연마용 조성물 및 이의 용도
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US6039891A (en) 1996-09-24 2000-03-21 Cabot Corporation Multi-oxidizer precursor for chemical mechanical polishing
US5811355A (en) * 1996-10-31 1998-09-22 Aiwa Co., Ltd. Enhanced chemical-mechanical polishing (E-CMP) method of forming a planar surface on a thin film magnetic head to avoid pole recession
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6068787A (en) 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US5954997A (en) * 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6045716A (en) * 1997-03-12 2000-04-04 Strasbaugh Chemical mechanical polishing apparatus and method
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6190237B1 (en) * 1997-11-06 2001-02-20 International Business Machines Corporation pH-buffered slurry and use thereof for polishing

Also Published As

Publication number Publication date
EP1090082B1 (de) 2003-05-07
US6362104B1 (en) 2002-03-26
EP1090082A1 (de) 2001-04-11
ID28712A (id) 2001-06-28
IL139804A0 (en) 2002-02-10
WO1999061540A1 (en) 1999-12-02
CA2336482A1 (en) 1999-12-02
AU4201699A (en) 1999-12-13
CN1306560A (zh) 2001-08-01
DE69907676D1 (de) 2003-06-12
JP2002516378A (ja) 2002-06-04
KR20010043798A (ko) 2001-05-25
US6177026B1 (en) 2001-01-23

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