DE69913067D1 - Verfahren zur Herstellung eines Photolack-Reliefbilds - Google Patents

Verfahren zur Herstellung eines Photolack-Reliefbilds

Info

Publication number
DE69913067D1
DE69913067D1 DE69913067T DE69913067T DE69913067D1 DE 69913067 D1 DE69913067 D1 DE 69913067D1 DE 69913067 T DE69913067 T DE 69913067T DE 69913067 T DE69913067 T DE 69913067T DE 69913067 D1 DE69913067 D1 DE 69913067D1
Authority
DE
Germany
Prior art keywords
production
relief image
photoresist relief
photoresist
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Revoked
Application number
DE69913067T
Other languages
English (en)
Other versions
DE69913067T2 (de
Inventor
Timothy G Adams
Edward K Pavelchek
Roger F Sinta
Manuel Docanto
Robert F Blacksmith
Peter Trefonas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shipley Co Inc
Rohm and Haas Electronic Materials LLC
Original Assignee
Shipley Co Inc
Shipley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22547781&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69913067(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Shipley Co Inc, Shipley Co LLC filed Critical Shipley Co Inc
Publication of DE69913067D1 publication Critical patent/DE69913067D1/de
Application granted granted Critical
Publication of DE69913067T2 publication Critical patent/DE69913067T2/de
Anticipated expiration legal-status Critical
Revoked legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
DE69913067T 1998-09-15 1999-09-15 Verfahren zur Herstellung eines Photolack-Reliefbilds Revoked DE69913067T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/153,575 US6410209B1 (en) 1998-09-15 1998-09-15 Methods utilizing antireflective coating compositions with exposure under 200 nm
US153575 1998-09-15

Publications (2)

Publication Number Publication Date
DE69913067D1 true DE69913067D1 (de) 2004-01-08
DE69913067T2 DE69913067T2 (de) 2004-10-14

Family

ID=22547781

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69913067T Revoked DE69913067T2 (de) 1998-09-15 1999-09-15 Verfahren zur Herstellung eines Photolack-Reliefbilds

Country Status (6)

Country Link
US (3) US20020102483A1 (de)
EP (1) EP0987600B1 (de)
JP (1) JP4454733B2 (de)
KR (1) KR100735880B1 (de)
DE (1) DE69913067T2 (de)
HK (1) HK1026949A1 (de)

Families Citing this family (111)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6773864B1 (en) * 1991-11-15 2004-08-10 Shipley Company, L.L.C. Antihalation compositions
US6165697A (en) * 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
US5939236A (en) 1997-02-07 1999-08-17 Shipley Company, L.L.C. Antireflective coating compositions comprising photoacid generators
US20020102483A1 (en) * 1998-09-15 2002-08-01 Timothy Adams Antireflective coating compositions
US6316165B1 (en) * 1999-03-08 2001-11-13 Shipley Company, L.L.C. Planarizing antireflective coating compositions
US6610808B2 (en) 1999-03-12 2003-08-26 Arch Specialty Chemicals, Inc. Thermally cured underlayer for lithographic application
US6323287B1 (en) * 1999-03-12 2001-11-27 Arch Specialty Chemicals, Inc. Hydroxy-amino thermally cured undercoat for 193 NM lithography
US6924339B2 (en) * 1999-03-12 2005-08-02 Arch Specialty Chemicals, Inc. Thermally cured underlayer for lithographic application
US6824879B2 (en) 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
WO2000077575A1 (en) 1999-06-10 2000-12-21 Alliedsignal Inc. Spin-on-glass anti-reflective coatings for photolithography
US6890448B2 (en) * 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
KR100533379B1 (ko) * 1999-09-07 2005-12-06 주식회사 하이닉스반도체 유기 난반사 방지막용 조성물과 이의 제조방법
KR100574482B1 (ko) * 1999-09-07 2006-04-27 주식회사 하이닉스반도체 유기 난반사 방지막용 조성물과 이의 제조방법
KR20010082831A (ko) * 2000-02-21 2001-08-31 구본준, 론 위라하디락사 액정표시장치의 제조방법
JP4253423B2 (ja) * 2000-06-14 2009-04-15 富士フイルム株式会社 ポジ型レジスト積層物
EP1172695A1 (de) * 2000-07-14 2002-01-16 Shipley Company LLC Sperrschicht
TW556047B (en) * 2000-07-31 2003-10-01 Shipley Co Llc Coated substrate, method for forming photoresist relief image, and antireflective composition
TW576949B (en) 2000-08-17 2004-02-21 Shipley Co Llc Antireflective coatings with increased etch rates
TWI281940B (en) * 2000-09-19 2007-06-01 Shipley Co Llc Antireflective composition
KR100419962B1 (ko) * 2001-03-07 2004-03-03 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
WO2002073307A2 (en) * 2001-03-13 2002-09-19 Arch Specialty Chemicals, Inc. Thermally cured underlayer for lithographic application
KR101010496B1 (ko) * 2001-04-17 2011-01-21 브레우어 사이언스 인코포레이션 개선된 스핀 보울 상화성을 갖는 반사 방지 코팅 조성물
KR100404893B1 (ko) * 2001-04-30 2003-11-07 주식회사 엘지화학 유무기 복합재료 피복 조성물과 이를 이용하는액정표시장치 보호막의 제조 방법
KR100396370B1 (ko) * 2001-04-30 2003-09-02 주식회사 엘지화학 Tft-lcd의 게이트 절연막용 유무기 복합재료, 이를포함하는 게이트 절연막 및, 그의 제조방법
US6605394B2 (en) 2001-05-03 2003-08-12 Applied Materials, Inc. Organic bottom antireflective coating for high performance mask making using optical imaging
TW576859B (en) * 2001-05-11 2004-02-21 Shipley Co Llc Antireflective coating compositions
KR20030006956A (ko) * 2001-05-11 2003-01-23 쉬플리 캄파니, 엘.엘.씨. 반사방지 코팅 조성물
US6703169B2 (en) 2001-07-23 2004-03-09 Applied Materials, Inc. Method of preparing optically imaged high performance photomasks
JP4840554B2 (ja) * 2001-09-13 2011-12-21 日産化学工業株式会社 反射防止膜の表面エネルギーの調整方法
US6586560B1 (en) * 2001-09-18 2003-07-01 Microchem Corp. Alkaline soluble maleimide-containing polymers
TW591341B (en) * 2001-09-26 2004-06-11 Shipley Co Llc Coating compositions for use with an overcoated photoresist
KR100465866B1 (ko) * 2001-10-26 2005-01-13 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
CN1606713B (zh) 2001-11-15 2011-07-06 霍尼韦尔国际公司 用于照相平版印刷术的旋涂抗反射涂料
US7309560B2 (en) 2002-02-19 2007-12-18 Nissan Chemical Industries, Ltd. Composition for forming anti-reflective coating
TW523807B (en) * 2002-03-21 2003-03-11 Nanya Technology Corp Method for improving photolithography pattern profile
US8012670B2 (en) 2002-04-11 2011-09-06 Rohm And Haas Electronic Materials Llc Photoresist systems
US6730454B2 (en) * 2002-04-16 2004-05-04 International Business Machines Corporation Antireflective SiO-containing compositions for hardmask layer
US6894104B2 (en) 2002-05-23 2005-05-17 Brewer Science Inc. Anti-reflective coatings and dual damascene fill compositions comprising styrene-allyl alcohol copolymers
US20040067437A1 (en) * 2002-10-06 2004-04-08 Shipley Company, L.L.C. Coating compositions for use with an overcoated photoresist
WO2004034148A1 (ja) 2002-10-09 2004-04-22 Nissan Chemical Industries, Ltd. リソグラフィー用反射防止膜形成組成物
JP2004177952A (ja) * 2002-11-20 2004-06-24 Rohm & Haas Electronic Materials Llc 多層フォトレジスト系
EP1422565A3 (de) * 2002-11-20 2005-01-05 Shipley Company LLC Mehrlagige Fotoresist-Systeme
US7029821B2 (en) * 2003-02-11 2006-04-18 Rohm And Haas Electronic Materials Llc Photoresist and organic antireflective coating compositions
US7794919B2 (en) * 2003-04-02 2010-09-14 Nissan Chemical Industries, Ltd. Composition for forming underlayer coating for lithography containing epoxy compound and carboxylic acid compound
JP4471123B2 (ja) * 2003-04-17 2010-06-02 日産化学工業株式会社 多孔質下層膜及び多孔質下層膜を形成するための下層膜形成組成物
US20040242759A1 (en) * 2003-05-30 2004-12-02 Bhave Mandar R. Bottom anti-reflective coating compositions comprising silicon containing polymers to improve adhesion towards photoresists
US6780736B1 (en) * 2003-06-20 2004-08-24 International Business Machines Corporation Method for image reversal of implant resist using a single photolithography exposure and structures formed thereby
US20050008789A1 (en) * 2003-06-26 2005-01-13 Rafac Robert J. Method and apparatus for stabilizing optical dielectric coatings
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
JP4769455B2 (ja) * 2003-12-30 2011-09-07 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. コーティング組成物
KR100586165B1 (ko) * 2003-12-30 2006-06-07 동부일렉트로닉스 주식회사 바닥 반사 방지 코팅 방법
WO2005066240A1 (en) * 2003-12-30 2005-07-21 Rohm And Haas Electronic Materials Llc Coating compositions
US7906180B2 (en) * 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
WO2005089150A2 (en) 2004-03-12 2005-09-29 Fujifilm Electronic Materials Usa Inc. Thermally cured undercoat for lithographic application
CN1934500B (zh) 2004-03-16 2013-03-13 日产化学工业株式会社 含有硫原子的防反射膜
US20050255410A1 (en) * 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US20070207406A1 (en) * 2004-04-29 2007-09-06 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
EP1600814A3 (de) * 2004-05-18 2008-12-17 Rohm and Haas Electronic Materials, L.L.C. Beschichtungszusammensetzungen für die Benutzung mit einem beschichteten Photoresist
JP4563076B2 (ja) * 2004-05-26 2010-10-13 東京応化工業株式会社 反射防止膜形成用組成物、該反射防止膜形成用組成物からなる反射防止膜、および該反射防止膜形成用組成物を用いたレジストパターン形成方法
US7638266B2 (en) 2004-08-12 2009-12-29 International Business Machines Corporation Ultrathin polymeric photoacid generator layer and method of fabricating at least one of a device and a mask by using said layer
US7691556B2 (en) * 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
US20060081557A1 (en) 2004-10-18 2006-04-20 Molecular Imprints, Inc. Low-k dielectric functional imprinting materials
EP1691238A3 (de) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
US20060199111A1 (en) * 2005-03-01 2006-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor devices using a photo acid generator
JP4595606B2 (ja) * 2005-03-17 2010-12-08 Jsr株式会社 反射防止膜形成用組成物、積層体およびレジストパターンの形成方法
US20060292501A1 (en) * 2005-06-24 2006-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography process with an enhanced depth-on-focus
EP1742108B1 (de) * 2005-07-05 2015-10-28 Rohm and Haas Electronic Materials, L.L.C. Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
US7326442B2 (en) * 2005-07-14 2008-02-05 International Business Machines Corporation Antireflective composition and process of making a lithographic structure
US20070015082A1 (en) * 2005-07-14 2007-01-18 International Business Machines Corporation Process of making a lithographic structure using antireflective materials
EP1762895B1 (de) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflex-Zusammensetzungen für Hartmasken
US11372330B2 (en) * 2005-09-27 2022-06-28 Nissan Chemical Industries, Ltd. Anti-reflective coating forming composition containing reaction product of isocyanuric acid compound with benzoic acid compound
US7553905B2 (en) * 2005-10-31 2009-06-30 Az Electronic Materials Usa Corp. Anti-reflective coatings
US20070117041A1 (en) * 2005-11-22 2007-05-24 Christoph Noelscher Photosensitive coating for enhancing a contrast of a photolithographic exposure
US7485573B2 (en) * 2006-02-17 2009-02-03 International Business Machines Corporation Process of making a semiconductor device using multiple antireflective materials
JP5112733B2 (ja) * 2006-04-11 2013-01-09 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. フォトリソグラフィ用コーティング組成物
US20070275330A1 (en) * 2006-05-25 2007-11-29 International Business Machines Corporation Bottom anti-reflective coating
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
US8158328B2 (en) 2007-02-15 2012-04-17 Tokyo Ohka Kogyo Co., Ltd. Composition for formation of anti-reflection film, and method for formation of resist pattern using the same
JP4970977B2 (ja) * 2007-02-15 2012-07-11 東京応化工業株式会社 反射防止膜形成用組成物、及びこれを用いたレジストパターン形成方法
JP5037158B2 (ja) * 2007-02-15 2012-09-26 東京応化工業株式会社 反射防止膜形成用組成物、及びこれを用いたレジストパターン形成方法
US8153346B2 (en) 2007-02-23 2012-04-10 Fujifilm Electronic Materials, U.S.A., Inc. Thermally cured underlayer for lithographic application
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
US20080248331A1 (en) * 2007-04-06 2008-10-09 Rohm And Haas Electronic Materials Llc Coating composition
JP4855354B2 (ja) * 2007-07-13 2012-01-18 信越化学工業株式会社 レジスト下層膜材料およびこれを用いたパターン形成方法
US20090035704A1 (en) * 2007-08-03 2009-02-05 Hong Zhuang Underlayer Coating Composition Based on a Crosslinkable Polymer
US20090042133A1 (en) * 2007-08-10 2009-02-12 Zhong Xiang Antireflective Coating Composition
US8039201B2 (en) * 2007-11-21 2011-10-18 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
KR101647158B1 (ko) 2008-01-29 2016-08-09 브레우어 사이언스 인코포레이션 다중 다크 필드 노출에 의한, 하드마스크 패턴화를 위한 온-트랙 공정
EP2247665A2 (de) * 2008-02-25 2010-11-10 Honeywell International Inc. Verarbeitbare anorganische und organische polymerformulierungen, verfahren zu ihrer herstellung und anwendungen davon
US8084189B2 (en) * 2008-05-22 2011-12-27 Eastman Kodak Company Method of imaging and developing positive-working imageable elements
US20100015550A1 (en) * 2008-07-17 2010-01-21 Weihong Liu Dual damascene via filling composition
US8415010B2 (en) * 2008-10-20 2013-04-09 Molecular Imprints, Inc. Nano-imprint lithography stack with enhanced adhesion between silicon-containing and non-silicon containing layers
US10437150B2 (en) * 2008-11-27 2019-10-08 Nissan Chemical Industries, Ltd. Composition for forming resist underlayer film with reduced outgassing
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8349547B1 (en) * 2009-12-22 2013-01-08 Sandia Corporation Lithographically defined microporous carbon structures
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US8715907B2 (en) * 2011-08-10 2014-05-06 International Business Machines Corporation Developable bottom antireflective coating compositions for negative resists
US9123726B2 (en) 2013-01-18 2015-09-01 International Business Machines Corporation Selective local metal cap layer formation for improved electromigration behavior
US9076847B2 (en) 2013-01-18 2015-07-07 International Business Machines Corporation Selective local metal cap layer formation for improved electromigration behavior
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9245751B2 (en) * 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9256128B2 (en) * 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
DE102014114176B4 (de) * 2013-10-17 2023-05-04 Taiwan Semiconductor Manufacturing Company, Ltd. Verfahren zur Herstellung einer Halbleitereinrichtung
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
EP3194502A4 (de) 2015-04-13 2018-05-16 Honeywell International Inc. Polysiloxanformulierungen und beschichtungen für optoelektronische anwendungen
WO2016179023A1 (en) * 2015-05-01 2016-11-10 Adarza Biosystems, Inc. Methods and devices for the high-volume production of silicon chips with uniform anti-reflective coatings
BR112018006139A2 (pt) * 2015-10-01 2018-10-23 Koninklijke Philips Nv dispositivo emissor de luz e método de fabricação de um dispositivo emissor de luz
JP6146512B2 (ja) * 2016-05-10 2017-06-14 三菱ケミカル株式会社 半導体リソグラフィー用重合体およびその製造方法
US10297510B1 (en) * 2018-04-25 2019-05-21 Internationel Business Machines Corporation Sidewall image transfer process for multiple gate width patterning

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060656A (en) 1973-04-02 1977-11-29 Teijin Limited Support for photosensitive resin
DE3039209A1 (de) 1980-10-17 1982-05-19 Basf Ag, 6700 Ludwigshafen Fotopolymere reliefformen und verfahren zu deren herstellung
US4370405A (en) 1981-03-30 1983-01-25 Hewlett-Packard Company Multilayer photoresist process utilizing an absorbant dye
US4362809A (en) 1981-03-30 1982-12-07 Hewlett-Packard Company Multilayer photoresist process utilizing an absorbant dye
US4910122A (en) 1982-09-30 1990-03-20 Brewer Science, Inc. Anti-reflective coating
US4551409A (en) 1983-11-07 1985-11-05 Shipley Company Inc. Photoresist composition of cocondensed naphthol and phenol with formaldehyde in admixture with positive o-quinone diazide or negative azide
EP0436639B1 (de) 1988-09-28 1998-01-14 Brewer Science, Inc. Multifunktionelle photolithographische zusammensetzungen
JP3118887B2 (ja) * 1990-11-30 2000-12-18 株式会社日立製作所 パターン形成方法
JP2776071B2 (ja) 1991-07-19 1998-07-16 松下電器産業株式会社 送信出力包絡線検波回路および線形送信回路
JPH05107767A (ja) * 1991-10-17 1993-04-30 Tosoh Corp 段差基板用塗布溶液
US6165697A (en) * 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
JP3082473B2 (ja) * 1992-10-05 2000-08-28 ジェイエスアール株式会社 反射防止膜およびレジストパターンの形成方法
US5576359A (en) 1993-07-20 1996-11-19 Wako Pure Chemical Industries, Ltd. Deep ultraviolet absorbent composition
US5498748A (en) 1993-07-20 1996-03-12 Wako Pure Chemical Industries, Ltd. Anthracene derivatives
KR970004447B1 (ko) * 1993-09-08 1997-03-27 삼성전자 주식회사 반사방지막 제조 방법 및 이를 이용한 반도체 장치의 제조 방법
JPH0786127A (ja) * 1993-09-10 1995-03-31 Toshiba Corp レジストパターンの形成方法
JP2803549B2 (ja) 1993-12-21 1998-09-24 信越化学工業株式会社 光反射性防止材料及びパターン形成方法
KR100230971B1 (ko) 1994-01-28 1999-11-15 가나가와 지히로 술포늄 염 및 레지스트 조성물 (Sulfonium Salt and Resist Composition)
US5597868A (en) 1994-03-04 1997-01-28 Massachusetts Institute Of Technology Polymeric anti-reflective compounds
US5607824A (en) 1994-07-27 1997-03-04 International Business Machines Corporation Antireflective coating for microlithography
US5525457A (en) * 1994-12-09 1996-06-11 Japan Synthetic Rubber Co., Ltd. Reflection preventing film and process for forming resist pattern using the same
JPH09258451A (ja) * 1996-03-18 1997-10-03 Toshiba Corp 感光性樹脂膜パターンの形成方法及び半導体装置の製造方法
US5886102A (en) 1996-06-11 1999-03-23 Shipley Company, L.L.C. Antireflective coating compositions
US5652317A (en) * 1996-08-16 1997-07-29 Hoechst Celanese Corporation Antireflective coatings for photoresist compositions
JP3053072B2 (ja) * 1996-09-10 2000-06-19 東京応化工業株式会社 レジスト積層体及びそれを用いたパターン形成方法
TW464791B (en) 1996-09-30 2001-11-21 Hoechst Celanese Corp Bottom antireflective coatings containing an arylhydrazo dye
JP3506357B2 (ja) * 1996-12-13 2004-03-15 東京応化工業株式会社 リソグラフィー用下地材
JPH10199789A (ja) * 1997-01-10 1998-07-31 Sony Corp 反射防止膜及びパターンニング方法
US5939236A (en) * 1997-02-07 1999-08-17 Shipley Company, L.L.C. Antireflective coating compositions comprising photoacid generators
JPH10319601A (ja) * 1997-05-22 1998-12-04 Jsr Corp 反射防止膜形成用組成物およびレジストパターンの形成方法
JP3851414B2 (ja) * 1997-06-04 2006-11-29 富士写真フイルム株式会社 反射防止膜材料組成物及びこれを用いたレジストパターン形成方法
JPH1172925A (ja) * 1997-07-03 1999-03-16 Toshiba Corp 下層膜用組成物およびこれを用いたパターン形成方法
JP3816640B2 (ja) * 1997-09-03 2006-08-30 東京応化工業株式会社 パターン形成用レジスト積層体及びそれを用いたパターン形成方法
US5919599A (en) * 1997-09-30 1999-07-06 Brewer Science, Inc. Thermosetting anti-reflective coatings at deep ultraviolet
US20020102483A1 (en) * 1998-09-15 2002-08-01 Timothy Adams Antireflective coating compositions

Also Published As

Publication number Publication date
EP0987600A1 (de) 2000-03-22
JP2000187331A (ja) 2000-07-04
US20020172896A1 (en) 2002-11-21
KR100735880B1 (ko) 2007-07-06
KR20000023145A (ko) 2000-04-25
US6410209B1 (en) 2002-06-25
US20020102483A1 (en) 2002-08-01
DE69913067T2 (de) 2004-10-14
US6602652B2 (en) 2003-08-05
HK1026949A1 (en) 2000-12-29
JP4454733B2 (ja) 2010-04-21
EP0987600B1 (de) 2003-11-26

Similar Documents

Publication Publication Date Title
DE69913067D1 (de) Verfahren zur Herstellung eines Photolack-Reliefbilds
DE69528216T2 (de) Verfahren zur Herstellung eines Dauerstents
DE60039268D1 (de) Verfahren zur Herstellung eines TFT
DE69520327T2 (de) Verfahren zur Herstellung eines Resistmusters
DE69614609D1 (de) Verfahren zur Herstellung eines Einkristalles
DE69412386D1 (de) Verfahren zur Herstellung simulierter photographischer Drucke
DE69919454D1 (de) Verfahren zur Herstellung eines Farbbildes.
DE59609242D1 (de) Verfahren zur Herstellung eines Reifens
DE19782013T1 (de) Verfahren zur Herstellung eines Strukturgliedes
DE69727742D1 (de) Verfahren zur Herstellung eines Silikonkautschuks
DE69917951D1 (de) Verfahren zur Herstellung eines Mehrschichtstoffes
DE69932993D1 (de) Verfahren zur Herstellung eines elektrophotographischen lichtempfindlichen Elementes
DE69417773D1 (de) Verfahren zur Herstellung eines p-Fuchsons
DE69907854D1 (de) Verfahren zur Herstellung eines Entfeuchtungselements
DE69703265D1 (de) Verfahren zur Herstellung eines Rohres
DE69916535D1 (de) Verfahren zur Herstellung eines Titankomplexes
DE69606813T2 (de) Verfahren zur Herstellung einer photopolymerisierbaren Druckform
DE69507660T2 (de) Verfahren zur Herstellung eines Polymer
DE69827326D1 (de) Verfahren zur Herstellung eines bandförmigen Gegenstandes
DE69704969D1 (de) Verfahren zur Herstellung einer photoempfinflichen Kunstoffdruckplatte
DE69627114D1 (de) Verfahren zur Herstellung eines feuerfest-überzogenen Kern
DE69912484D1 (de) Verfahren zur Herstellung eines Silizium-Einkristalles
DE69406004T2 (de) Verfahren zur Herstellung eines verbesserten Bilds
DE69817489D1 (de) Verfahren zur Herstellung eines Betonproduktes
DE69822621D1 (de) Verfahren zur Herstellung eines Muschelersatzes

Legal Events

Date Code Title Description
8363 Opposition against the patent
8331 Complete revocation