DE69916684D1 - Verwendung einer flüssigen Zusammensetzung zum Photoresist-Entschichten - Google Patents
Verwendung einer flüssigen Zusammensetzung zum Photoresist-EntschichtenInfo
- Publication number
- DE69916684D1 DE69916684D1 DE69916684T DE69916684T DE69916684D1 DE 69916684 D1 DE69916684 D1 DE 69916684D1 DE 69916684 T DE69916684 T DE 69916684T DE 69916684 T DE69916684 T DE 69916684T DE 69916684 D1 DE69916684 D1 DE 69916684D1
- Authority
- DE
- Germany
- Prior art keywords
- liquid composition
- photoresist stripping
- photoresist
- stripping
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007788 liquid Substances 0.000 title 1
- 229920002120 photoresistant polymer Polymers 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6203198 | 1998-02-27 | ||
| JP6203198 | 1998-02-27 | ||
| EP99103676.5A EP0939344B2 (de) | 1998-02-27 | 1999-02-25 | Flüssige Photoresist-Entschichtungszusammensetzung |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE69916684D1 true DE69916684D1 (de) | 2004-06-03 |
| DE69916684T2 DE69916684T2 (de) | 2005-04-21 |
| DE69916684T3 DE69916684T3 (de) | 2014-12-11 |
Family
ID=13188402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69916684.5T Expired - Lifetime DE69916684T3 (de) | 1998-02-27 | 1999-02-25 | Verwendung einer flüssigen Zusammensetzung zum Photoresist-Entschichten |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6231677B1 (de) |
| EP (1) | EP0939344B2 (de) |
| KR (1) | KR100573257B1 (de) |
| DE (1) | DE69916684T3 (de) |
| TW (1) | TWI228283B (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NZ512506A (en) * | 1998-12-04 | 2004-01-30 | Farrow System Ltd | Method for removing surface coatings |
| JP2002075993A (ja) * | 2000-06-15 | 2002-03-15 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JP3787085B2 (ja) | 2001-12-04 | 2006-06-21 | 関東化学株式会社 | フォトレジスト残渣除去液組成物 |
| US6943142B2 (en) | 2002-01-09 | 2005-09-13 | Air Products And Chemicals, Inc. | Aqueous stripping and cleaning composition |
| EP1335016A1 (de) * | 2002-02-06 | 2003-08-13 | Shipley Company LLC | Reinigungszusammensetzung |
| JP4252758B2 (ja) * | 2002-03-22 | 2009-04-08 | 関東化学株式会社 | フォトレジスト残渣除去液組成物 |
| DE60328014D1 (de) | 2002-04-25 | 2009-07-30 | Fujifilm Electronic Materials | Nicht korrodierende reinigungsmittel zur entfernung von ätzmittelrückständen |
| US6677286B1 (en) | 2002-07-10 | 2004-01-13 | Air Products And Chemicals, Inc. | Compositions for removing etching residue and use thereof |
| WO2004016827A1 (fr) * | 2002-08-19 | 2004-02-26 | Merk-Kanto Advanced Chemical Ltd. | Solution decapante |
| KR100569515B1 (ko) | 2003-04-08 | 2006-04-07 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
| TWI362415B (en) * | 2003-10-27 | 2012-04-21 | Wako Pure Chem Ind Ltd | Novel detergent and method for cleaning |
| CN102132385B (zh) * | 2008-08-25 | 2015-02-18 | 大金工业株式会社 | 半导体干式工艺后的残渣除去液和使用该除去液的残渣除去方法 |
| TWI752903B (zh) * | 2015-03-12 | 2022-01-21 | 德商馬克專利公司 | 在低ｐＫａ驅動之聚合物剝離期間促進電荷錯合銅之保護的組合物及方法 |
| US11365379B2 (en) | 2018-01-25 | 2022-06-21 | Merck Patent Gmbh | Photoresist remover compositions |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1603558A (en) * | 1968-12-18 | 1971-05-03 | Cleaning heating surfaces with complexing agent soln | |
| GB2026550B (en) * | 1978-07-27 | 1982-08-25 | Brent Chemicals Int | Compositions for use in treating metal surfaces |
| FR2455076A1 (fr) | 1979-04-24 | 1980-11-21 | Rhone Poulenc Ind | Composition pour l'elimination des resines photoresistantes |
| FR2455075A1 (fr) | 1979-04-24 | 1980-11-21 | Rhone Poulenc Ind | Composition a base de solvants chlores pour l'elimination de resines photoresistantes |
| SU1070210A1 (ru) * | 1981-09-17 | 1984-01-30 | Предприятие П/Я А-3562 | Раствор дл размерного травлени железа |
| US4452643A (en) * | 1983-01-12 | 1984-06-05 | Halliburton Company | Method of removing copper and copper oxide from a ferrous metal surface |
| US6492311B2 (en) | 1990-11-05 | 2002-12-10 | Ekc Technology, Inc. | Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process |
| US5279771A (en) † | 1990-11-05 | 1994-01-18 | Ekc Technology, Inc. | Stripping compositions comprising hydroxylamine and alkanolamine |
| US5981454A (en) † | 1993-06-21 | 1999-11-09 | Ekc Technology, Inc. | Post clean treatment composition comprising an organic acid and hydroxylamine |
| DE4209865C2 (de) * | 1992-03-26 | 1994-06-30 | Wacker Chemitronic | Verfahren zur Verbesserung der Wirksamkeit wässeriger Reinigungsmittel zum Entfernen metallhaltiger Rückstände auf Halbleiteroberflächen |
| JP2980772B2 (ja) | 1992-04-02 | 1999-11-22 | ナガセ電子化学株式会社 | 剥離剤組成物 |
| US5480585A (en) | 1992-04-02 | 1996-01-02 | Nagase Electronic Chemicals, Ltd. | Stripping liquid compositions |
| JP3264405B2 (ja) | 1994-01-07 | 2002-03-11 | 三菱瓦斯化学株式会社 | 半導体装置洗浄剤および半導体装置の製造方法 |
| US5466389A (en) † | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
| US5567574A (en) | 1995-01-10 | 1996-10-22 | Mitsubishi Gas Chemical Company, Inc. | Removing agent composition for photoresist and method of removing |
| JPH08262746A (ja) | 1995-03-28 | 1996-10-11 | Mitsubishi Gas Chem Co Inc | フォトレジスト剥離剤組成物および剥離方法 |
| JPH08222574A (ja) | 1995-02-15 | 1996-08-30 | Mitsubishi Gas Chem Co Inc | 半導体装置の製造方法 |
| JP3236220B2 (ja) | 1995-11-13 | 2001-12-10 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
| TW416987B (en) * | 1996-06-05 | 2001-01-01 | Wako Pure Chem Ind Ltd | A composition for cleaning the semiconductor substrate surface |
| US6323168B1 (en) | 1996-07-03 | 2001-11-27 | Advanced Technology Materials, Inc. | Post plasma ashing wafer cleaning formulation |
| JPH1055993A (ja) | 1996-08-09 | 1998-02-24 | Hitachi Ltd | 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法 |
| JP4006548B2 (ja) | 1997-03-12 | 2007-11-14 | 三菱瓦斯化学株式会社 | 半導体回路用洗浄剤及びそれを用いた半導体回路の製造方法 |
| TW387936B (en) * | 1997-08-12 | 2000-04-21 | Kanto Kagaku | Washing solution |
| US5977041A (en) † | 1997-09-23 | 1999-11-02 | Olin Microelectronic Chemicals | Aqueous rinsing composition |
| US6033993A (en) † | 1997-09-23 | 2000-03-07 | Olin Microelectronic Chemicals, Inc. | Process for removing residues from a semiconductor substrate |
-
1999
- 1999-02-22 US US09/255,537 patent/US6231677B1/en not_active Expired - Lifetime
- 1999-02-23 TW TW088102590A patent/TWI228283B/zh not_active IP Right Cessation
- 1999-02-25 DE DE69916684.5T patent/DE69916684T3/de not_active Expired - Lifetime
- 1999-02-25 EP EP99103676.5A patent/EP0939344B2/de not_active Expired - Lifetime
- 1999-02-26 KR KR1019990006509A patent/KR100573257B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWI228283B (en) | 2005-02-21 |
| KR19990037944A (ko) | 1999-05-25 |
| US6231677B1 (en) | 2001-05-15 |
| EP0939344B2 (de) | 2014-07-09 |
| KR100573257B1 (ko) | 2006-04-24 |
| DE69916684T2 (de) | 2005-04-21 |
| DE69916684T3 (de) | 2014-12-11 |
| EP0939344A1 (de) | 1999-09-01 |
| EP0939344B1 (de) | 2004-04-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8363 | Opposition against the patent |