DE69916684T2 - Verwendung einer flüssigen Zusammensetzung zum Photoresist-Entschichten - Google Patents
Verwendung einer flüssigen Zusammensetzung zum Photoresist-Entschichten Download PDFInfo
- Publication number
- DE69916684T2 DE69916684T2 DE69916684T DE69916684T DE69916684T2 DE 69916684 T2 DE69916684 T2 DE 69916684T2 DE 69916684 T DE69916684 T DE 69916684T DE 69916684 T DE69916684 T DE 69916684T DE 69916684 T2 DE69916684 T2 DE 69916684T2
- Authority
- DE
- Germany
- Prior art keywords
- liquid composition
- photoresist stripping
- photoresist
- stripping
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007788 liquid Substances 0.000 title 1
- 229920002120 photoresistant polymer Polymers 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6203198 | 1998-02-27 | ||
JP6203198 | 1998-02-27 | ||
EP99103676.5A EP0939344B2 (de) | 1998-02-27 | 1999-02-25 | Flüssige Photoresist-Entschichtungszusammensetzung |
Publications (3)
Publication Number | Publication Date |
---|---|
DE69916684D1 DE69916684D1 (de) | 2004-06-03 |
DE69916684T2 true DE69916684T2 (de) | 2005-04-21 |
DE69916684T3 DE69916684T3 (de) | 2014-12-11 |
Family
ID=13188402
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69916684.5T Expired - Lifetime DE69916684T3 (de) | 1998-02-27 | 1999-02-25 | Verwendung einer flüssigen Zusammensetzung zum Photoresist-Entschichten |
Country Status (5)
Country | Link |
---|---|
US (1) | US6231677B1 (de) |
EP (1) | EP0939344B2 (de) |
KR (1) | KR100573257B1 (de) |
DE (1) | DE69916684T3 (de) |
TW (1) | TWI228283B (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6609955B1 (en) * | 1998-12-04 | 2003-08-26 | Farrow System Limited | Method for removing surface coatings |
JP2002075993A (ja) * | 2000-06-15 | 2002-03-15 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP3787085B2 (ja) * | 2001-12-04 | 2006-06-21 | 関東化学株式会社 | フォトレジスト残渣除去液組成物 |
US6943142B2 (en) * | 2002-01-09 | 2005-09-13 | Air Products And Chemicals, Inc. | Aqueous stripping and cleaning composition |
CN1441043A (zh) * | 2002-02-06 | 2003-09-10 | 希普利公司 | 清洁用组合物 |
JP4252758B2 (ja) * | 2002-03-22 | 2009-04-08 | 関東化学株式会社 | フォトレジスト残渣除去液組成物 |
US7935665B2 (en) | 2002-04-25 | 2011-05-03 | Fujifilm Electronic Materials U.S.A., Inc. | Non-corrosive cleaning compositions for removing etch residues |
US6677286B1 (en) | 2002-07-10 | 2004-01-13 | Air Products And Chemicals, Inc. | Compositions for removing etching residue and use thereof |
AU2002327300A1 (en) * | 2002-08-19 | 2004-03-03 | Merk-Kanto Advanced Chemical Ltd. | Remover solution |
KR100569515B1 (ko) | 2003-04-08 | 2006-04-07 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
TWI362415B (en) * | 2003-10-27 | 2012-04-21 | Wako Pure Chem Ind Ltd | Novel detergent and method for cleaning |
WO2010024093A1 (ja) * | 2008-08-25 | 2010-03-04 | ダイキン工業株式会社 | 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法 |
JP7045190B2 (ja) * | 2015-03-12 | 2022-03-31 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 低pka駆動ポリマーストリップ中の電荷錯体銅保護を促進する組成物および方法 |
US11365379B2 (en) | 2018-01-25 | 2022-06-21 | Merck Patent Gmbh | Photoresist remover compositions |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1603558A (en) * | 1968-12-18 | 1971-05-03 | Cleaning heating surfaces with complexing agent soln | |
GB2026550B (en) * | 1978-07-27 | 1982-08-25 | Brent Chemicals Int | Compositions for use in treating metal surfaces |
FR2455076A1 (fr) | 1979-04-24 | 1980-11-21 | Rhone Poulenc Ind | Composition pour l'elimination des resines photoresistantes |
FR2455075A1 (fr) | 1979-04-24 | 1980-11-21 | Rhone Poulenc Ind | Composition a base de solvants chlores pour l'elimination de resines photoresistantes |
SU1070210A1 (ru) * | 1981-09-17 | 1984-01-30 | Предприятие П/Я А-3562 | Раствор дл размерного травлени железа |
US4452643A (en) * | 1983-01-12 | 1984-06-05 | Halliburton Company | Method of removing copper and copper oxide from a ferrous metal surface |
US5981454A (en) † | 1993-06-21 | 1999-11-09 | Ekc Technology, Inc. | Post clean treatment composition comprising an organic acid and hydroxylamine |
US5279771A (en) | 1990-11-05 | 1994-01-18 | Ekc Technology, Inc. | Stripping compositions comprising hydroxylamine and alkanolamine |
US6492311B2 (en) | 1990-11-05 | 2002-12-10 | Ekc Technology, Inc. | Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process |
DE4209865C2 (de) * | 1992-03-26 | 1994-06-30 | Wacker Chemitronic | Verfahren zur Verbesserung der Wirksamkeit wässeriger Reinigungsmittel zum Entfernen metallhaltiger Rückstände auf Halbleiteroberflächen |
US5480585A (en) | 1992-04-02 | 1996-01-02 | Nagase Electronic Chemicals, Ltd. | Stripping liquid compositions |
JP2980772B2 (ja) | 1992-04-02 | 1999-11-22 | ナガセ電子化学株式会社 | 剥離剤組成物 |
JP3264405B2 (ja) | 1994-01-07 | 2002-03-11 | 三菱瓦斯化学株式会社 | 半導体装置洗浄剤および半導体装置の製造方法 |
US5466389A (en) † | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
JPH08262746A (ja) | 1995-03-28 | 1996-10-11 | Mitsubishi Gas Chem Co Inc | フォトレジスト剥離剤組成物および剥離方法 |
US5567574A (en) | 1995-01-10 | 1996-10-22 | Mitsubishi Gas Chemical Company, Inc. | Removing agent composition for photoresist and method of removing |
JPH08222574A (ja) | 1995-02-15 | 1996-08-30 | Mitsubishi Gas Chem Co Inc | 半導体装置の製造方法 |
JP3236220B2 (ja) | 1995-11-13 | 2001-12-10 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
TW416987B (en) * | 1996-06-05 | 2001-01-01 | Wako Pure Chem Ind Ltd | A composition for cleaning the semiconductor substrate surface |
US6323168B1 (en) | 1996-07-03 | 2001-11-27 | Advanced Technology Materials, Inc. | Post plasma ashing wafer cleaning formulation |
JPH1055993A (ja) † | 1996-08-09 | 1998-02-24 | Hitachi Ltd | 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法 |
JP4006548B2 (ja) | 1997-03-12 | 2007-11-14 | 三菱瓦斯化学株式会社 | 半導体回路用洗浄剤及びそれを用いた半導体回路の製造方法 |
TW387936B (en) * | 1997-08-12 | 2000-04-21 | Kanto Kagaku | Washing solution |
US6033993A (en) † | 1997-09-23 | 2000-03-07 | Olin Microelectronic Chemicals, Inc. | Process for removing residues from a semiconductor substrate |
US5977041A (en) † | 1997-09-23 | 1999-11-02 | Olin Microelectronic Chemicals | Aqueous rinsing composition |
-
1999
- 1999-02-22 US US09/255,537 patent/US6231677B1/en not_active Expired - Lifetime
- 1999-02-23 TW TW088102590A patent/TWI228283B/zh not_active IP Right Cessation
- 1999-02-25 EP EP99103676.5A patent/EP0939344B2/de not_active Expired - Lifetime
- 1999-02-25 DE DE69916684.5T patent/DE69916684T3/de not_active Expired - Lifetime
- 1999-02-26 KR KR1019990006509A patent/KR100573257B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US6231677B1 (en) | 2001-05-15 |
DE69916684D1 (de) | 2004-06-03 |
EP0939344B2 (de) | 2014-07-09 |
EP0939344A1 (de) | 1999-09-01 |
EP0939344B1 (de) | 2004-04-28 |
KR100573257B1 (ko) | 2006-04-24 |
TWI228283B (en) | 2005-02-21 |
KR19990037944A (ko) | 1999-05-25 |
DE69916684T3 (de) | 2014-12-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent |