DE69921172D1 - Grabenisolation für bauelemente mit selektiver dotierung - Google Patents

Grabenisolation für bauelemente mit selektiver dotierung

Info

Publication number
DE69921172D1
DE69921172D1 DE1999621172 DE69921172T DE69921172D1 DE 69921172 D1 DE69921172 D1 DE 69921172D1 DE 1999621172 DE1999621172 DE 1999621172 DE 69921172 T DE69921172 T DE 69921172T DE 69921172 D1 DE69921172 D1 DE 69921172D1
Authority
DE
Germany
Prior art keywords
trench
isolation device
components
trench isolation
trench insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1999621172
Other languages
English (en)
Other versions
DE69921172T2 (de
Inventor
Y Kao
Rongsheng Yeng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DE69921172D1 publication Critical patent/DE69921172D1/de
Publication of DE69921172T2 publication Critical patent/DE69921172T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/765—Making of isolation regions between components by field effect
DE69921172T 1998-08-31 1999-08-03 Grabenisolation für bauelemente mit selektiver dotierung Expired - Lifetime DE69921172T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/143,585 US6781212B1 (en) 1998-08-31 1998-08-31 Selectively doped trench device isolation
US143585 1998-08-31
PCT/US1999/017812 WO2000013208A2 (en) 1998-08-31 1999-08-03 Selectively doped trench device isolation

Publications (2)

Publication Number Publication Date
DE69921172D1 true DE69921172D1 (de) 2004-11-18
DE69921172T2 DE69921172T2 (de) 2006-02-16

Family

ID=22504709

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69921172T Expired - Lifetime DE69921172T2 (de) 1998-08-31 1999-08-03 Grabenisolation für bauelemente mit selektiver dotierung

Country Status (7)

Country Link
US (3) US6781212B1 (de)
EP (2) EP1473766A3 (de)
AT (1) ATE279785T1 (de)
AU (1) AU1516000A (de)
DE (1) DE69921172T2 (de)
TW (1) TWM258414U (de)
WO (1) WO2000013208A2 (de)

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* Cited by examiner, † Cited by third party
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US6781212B1 (en) * 1998-08-31 2004-08-24 Micron Technology, Inc Selectively doped trench device isolation
KR100620218B1 (ko) * 2003-12-31 2006-09-11 동부일렉트로닉스 주식회사 반도체 소자
DE102004028679A1 (de) * 2004-06-14 2006-01-05 Infineon Technologies Ag Isolationsgrabenanordnung
US7371627B1 (en) 2005-05-13 2008-05-13 Micron Technology, Inc. Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines
US7120046B1 (en) 2005-05-13 2006-10-10 Micron Technology, Inc. Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines
US7902598B2 (en) * 2005-06-24 2011-03-08 Micron Technology, Inc. Two-sided surround access transistor for a 4.5F2 DRAM cell
US7888721B2 (en) 2005-07-06 2011-02-15 Micron Technology, Inc. Surround gate access transistors with grown ultra-thin bodies
US7768051B2 (en) 2005-07-25 2010-08-03 Micron Technology, Inc. DRAM including a vertical surround gate transistor
US7696567B2 (en) 2005-08-31 2010-04-13 Micron Technology, Inc Semiconductor memory device
JP2007194259A (ja) * 2006-01-17 2007-08-02 Toshiba Corp 半導体装置及びその製造方法
DE102007018098B4 (de) 2007-04-17 2016-06-16 Austriamicrosystems Ag Verfahren zum Herstellen eines Halbleiterkörpers mit einem Graben und Halbleiterkörper mit einem Graben
TWI416660B (zh) * 2008-03-19 2013-11-21 Vanguard Int Semiconduct Corp 半導體元件及其製造方法
JP6026914B2 (ja) 2013-02-12 2016-11-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9502414B2 (en) 2015-02-26 2016-11-22 Qualcomm Incorporated Adjacent device isolation
US9822723B2 (en) * 2015-03-04 2017-11-21 Denso Corporation Fuel level sensor diagnosis device
CN109346467A (zh) * 2018-08-17 2019-02-15 矽力杰半导体技术(杭州)有限公司 半导体结构、驱动芯片和半导体结构的制造方法
CN113054004B (zh) * 2021-03-11 2022-08-23 电子科技大学 一种应用于集成电路高低压隔离的反向电场耦合隔离结构

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US4180416A (en) 1978-09-27 1979-12-25 International Business Machines Corporation Thermal migration-porous silicon technique for forming deep dielectric isolation
US4470062A (en) 1979-08-31 1984-09-04 Hitachi, Ltd. Semiconductor device having isolation regions
US4624046A (en) 1982-01-04 1986-11-25 Fairchild Camera & Instrument Corp. Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM
DE3242113A1 (de) 1982-11-13 1984-05-24 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur herstellung einer duennen dielektrischen isolation in einem siliciumhalbleiterkoerper
EP0220108A3 (de) 1985-10-07 1990-04-11 Thomson Components-Mostek Corporation Seitenwanddotierung für Grabenisolation
US4824797A (en) 1985-10-31 1989-04-25 International Business Machines Corporation Self-aligned channel stop
JPS62131539A (ja) 1985-12-03 1987-06-13 Fujitsu Ltd 半導体装置の製造方法
US4666556A (en) 1986-05-12 1987-05-19 International Business Machines Corporation Trench sidewall isolation by polysilicon oxidation
US4980747A (en) * 1986-12-22 1990-12-25 Texas Instruments Inc. Deep trench isolation with surface contact to substrate
US4819052A (en) * 1986-12-22 1989-04-04 Texas Instruments Incorporated Merged bipolar/CMOS technology using electrically active trench
JPH0713871B2 (ja) * 1987-06-11 1995-02-15 三菱電機株式会社 ダイナミツクｒａｍ
JPH01138730A (ja) 1987-11-25 1989-05-31 Fujitsu Ltd 半導体装置
US5073509A (en) 1989-12-11 1991-12-17 Micron Technology, Inc. Blanket CMOS channel-stop implant
US5459346A (en) * 1988-06-28 1995-10-17 Ricoh Co., Ltd. Semiconductor substrate with electrical contact in groove
US4839301A (en) 1988-12-19 1989-06-13 Micron Technology, Inc. Blanket CMOS channel stop implant employing a combination of n-channel and p-channel punch-through implants
JP2512216B2 (ja) 1989-08-01 1996-07-03 松下電器産業株式会社 半導体装置の製造方法
US5179038A (en) 1989-12-22 1993-01-12 North American Philips Corp., Signetics Division High density trench isolation for MOS circuits
US5173438A (en) 1991-02-13 1992-12-22 Micron Technology, Inc. Method of performing a field implant subsequent to field oxide fabrication by utilizing selective tungsten deposition to produce encroachment-free isolation
US5087586A (en) 1991-07-03 1992-02-11 Micron Technology, Inc. Process for creating fully-recessed field isolation regions by oxidizing a selectively-grown epitaxial silicon layer
US5191509A (en) 1991-12-11 1993-03-02 International Business Machines Corporation Textured polysilicon stacked trench capacitor
US5358894A (en) 1992-02-06 1994-10-25 Micron Technology, Inc. Oxidation enhancement in narrow masked field regions of a semiconductor wafer
JP3688726B2 (ja) 1992-07-17 2005-08-31 株式会社東芝 半導体装置の製造方法
JP3252518B2 (ja) 1993-03-19 2002-02-04 ソニー株式会社 ドライエッチング方法
US5302233A (en) 1993-03-19 1994-04-12 Micron Semiconductor, Inc. Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP)
US5356828A (en) 1993-07-01 1994-10-18 Digital Equipment Corporation Method of forming micro-trench isolation regions in the fabrication of semiconductor devices
JPH0776700A (ja) * 1993-07-14 1995-03-20 Senju Pharmaceut Co Ltd コンタクトレンズ用剤の安定化方法
US5470783A (en) 1994-06-06 1995-11-28 At&T Ipm Corp. Method for integrated circuit device isolation
US5436190A (en) * 1994-11-23 1995-07-25 United Microelectronics Corporation Method for fabricating semiconductor device isolation using double oxide spacers
US5530293A (en) 1994-11-28 1996-06-25 International Business Machines Corporation Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits
US5492736A (en) 1994-11-28 1996-02-20 Air Products And Chemicals, Inc. Fluorine doped silicon oxide process
US5859466A (en) 1995-06-07 1999-01-12 Nippon Steel Semiconductor Corporation Semiconductor device having a field-shield device isolation structure and method for making thereof
JPH0964164A (ja) 1995-08-24 1997-03-07 Nittetsu Semiconductor Kk 半導体装置およびその製造方法
US5702976A (en) 1995-10-24 1997-12-30 Micron Technology, Inc. Shallow trench isolation using low dielectric constant insulator
US5914523A (en) * 1998-02-17 1999-06-22 National Semiconductor Corp. Semiconductor device trench isolation structure with polysilicon bias voltage contact
US6781212B1 (en) * 1998-08-31 2004-08-24 Micron Technology, Inc Selectively doped trench device isolation

Also Published As

Publication number Publication date
US20050012174A1 (en) 2005-01-20
EP1125326A2 (de) 2001-08-22
TWM258414U (en) 2005-03-01
DE69921172T2 (de) 2006-02-16
EP1125326B1 (de) 2004-10-13
US20060220109A1 (en) 2006-10-05
WO2000013208A2 (en) 2000-03-09
AU1516000A (en) 2000-03-21
WO2000013208A9 (en) 2000-08-17
EP1473766A3 (de) 2004-12-15
WO2000013208A3 (en) 2000-06-02
EP1473766A2 (de) 2004-11-03
US6781212B1 (en) 2004-08-24
ATE279785T1 (de) 2004-10-15
US7259442B2 (en) 2007-08-21

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