DE69927548D1 - Vorrichtung zur Herstellung von Dünnfilmen - Google Patents
Vorrichtung zur Herstellung von DünnfilmenInfo
- Publication number
- DE69927548D1 DE69927548D1 DE69927548T DE69927548T DE69927548D1 DE 69927548 D1 DE69927548 D1 DE 69927548D1 DE 69927548 T DE69927548 T DE 69927548T DE 69927548 T DE69927548 T DE 69927548T DE 69927548 D1 DE69927548 D1 DE 69927548D1
- Authority
- DE
- Germany
- Prior art keywords
- thin films
- producing thin
- producing
- films
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR9817858 | 1998-05-18 | ||
| KR1019980017858A KR100267885B1 (ko) | 1998-05-18 | 1998-05-18 | 반도체 박막증착장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69927548D1 true DE69927548D1 (de) | 2006-02-16 |
| DE69927548T2 DE69927548T2 (de) | 2006-06-29 |
Family
ID=36580479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69927548T Expired - Fee Related DE69927548T2 (de) | 1998-05-18 | 1999-05-18 | Vorrichtung zur Herstellung von Dünnfilmen |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6183563B1 (de) |
| EP (1) | EP0959150B8 (de) |
| JP (1) | JP3073489B2 (de) |
| KR (1) | KR100267885B1 (de) |
| DE (1) | DE69927548T2 (de) |
| TW (1) | TW483051B (de) |
Families Citing this family (112)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6671223B2 (en) * | 1996-12-20 | 2003-12-30 | Westerngeco, L.L.C. | Control devices for controlling the position of a marine seismic streamer |
| DE19959603A1 (de) * | 1999-12-10 | 2001-06-13 | Volkswagen Ag | Verfahren zum Beschichten der inneren Oberfläche eines Reaktorgefäßes eines Reaktors |
| DE19959604A1 (de) * | 1999-12-10 | 2001-06-13 | Volkswagen Ag | Reaktor für Plasmabeschichtungen und Plasmadiffusionsbehandlungen |
| KR100332314B1 (ko) * | 2000-06-24 | 2002-04-12 | 서성기 | 박막증착용 반응용기 |
| KR100444149B1 (ko) * | 2000-07-22 | 2004-08-09 | 주식회사 아이피에스 | Ald 박막증착설비용 클리닝방법 |
| US6765178B2 (en) | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US6825447B2 (en) | 2000-12-29 | 2004-11-30 | Applied Materials, Inc. | Apparatus and method for uniform substrate heating and contaminate collection |
| KR101004222B1 (ko) | 2001-02-09 | 2010-12-24 | 도쿄엘렉트론가부시키가이샤 | 성막 장치 |
| US6660126B2 (en) * | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US6878206B2 (en) * | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| KR100423953B1 (ko) * | 2001-03-19 | 2004-03-24 | 디지웨이브 테크놀러지스 주식회사 | 화학기상증착장치 |
| US6849545B2 (en) | 2001-06-20 | 2005-02-01 | Applied Materials, Inc. | System and method to form a composite film stack utilizing sequential deposition techniques |
| US20030198754A1 (en) * | 2001-07-16 | 2003-10-23 | Ming Xi | Aluminum oxide chamber and process |
| US20080268635A1 (en) * | 2001-07-25 | 2008-10-30 | Sang-Ho Yu | Process for forming cobalt and cobalt silicide materials in copper contact applications |
| JP2005504885A (ja) * | 2001-07-25 | 2005-02-17 | アプライド マテリアルズ インコーポレイテッド | 新規なスパッタ堆積方法を使用したバリア形成 |
| US8110489B2 (en) * | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
| US20090004850A1 (en) | 2001-07-25 | 2009-01-01 | Seshadri Ganguli | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
| US20030029715A1 (en) * | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
| US9051641B2 (en) * | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| US6718126B2 (en) * | 2001-09-14 | 2004-04-06 | Applied Materials, Inc. | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition |
| US7049226B2 (en) * | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| US6936906B2 (en) * | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US6797108B2 (en) * | 2001-10-05 | 2004-09-28 | Applied Materials, Inc. | Apparatus and method for evenly flowing processing gas onto a semiconductor wafer |
| JP3616366B2 (ja) | 2001-10-23 | 2005-02-02 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
| US6916398B2 (en) * | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US7780785B2 (en) * | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
| WO2003038145A2 (en) * | 2001-10-29 | 2003-05-08 | Genus, Inc. | Chemical vapor deposition system |
| US6773507B2 (en) * | 2001-12-06 | 2004-08-10 | Applied Materials, Inc. | Apparatus and method for fast-cycle atomic layer deposition |
| US6729824B2 (en) | 2001-12-14 | 2004-05-04 | Applied Materials, Inc. | Dual robot processing system |
| US6986814B2 (en) * | 2001-12-20 | 2006-01-17 | General Electric Company | Gas distributor for vapor coating method and container |
| US20050000449A1 (en) | 2001-12-21 | 2005-01-06 | Masayuki Ishibashi | Susceptor for epitaxial growth and epitaxial growth method |
| JP2003197532A (ja) * | 2001-12-21 | 2003-07-11 | Sumitomo Mitsubishi Silicon Corp | エピタキシャル成長方法及びエピタキシャル成長用サセプター |
| AU2003238853A1 (en) * | 2002-01-25 | 2003-09-02 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
| US6866746B2 (en) * | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
| US6911391B2 (en) * | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US6998014B2 (en) * | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
| US6972267B2 (en) * | 2002-03-04 | 2005-12-06 | Applied Materials, Inc. | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
| TWI278532B (en) * | 2002-06-23 | 2007-04-11 | Asml Us Inc | Method for energy-assisted atomic layer deposition and removal |
| US6821347B2 (en) * | 2002-07-08 | 2004-11-23 | Micron Technology, Inc. | Apparatus and method for depositing materials onto microelectronic workpieces |
| US7186385B2 (en) | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
| US6955211B2 (en) | 2002-07-17 | 2005-10-18 | Applied Materials, Inc. | Method and apparatus for gas temperature control in a semiconductor processing system |
| US7066194B2 (en) * | 2002-07-19 | 2006-06-27 | Applied Materials, Inc. | Valve design and configuration for fast delivery system |
| US6772072B2 (en) | 2002-07-22 | 2004-08-03 | Applied Materials, Inc. | Method and apparatus for monitoring solid precursor delivery |
| US6915592B2 (en) * | 2002-07-29 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
| US6955725B2 (en) * | 2002-08-15 | 2005-10-18 | Micron Technology, Inc. | Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces |
| US20040065255A1 (en) * | 2002-10-02 | 2004-04-08 | Applied Materials, Inc. | Cyclical layer deposition system |
| US6821563B2 (en) | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
| US20040069227A1 (en) * | 2002-10-09 | 2004-04-15 | Applied Materials, Inc. | Processing chamber configured for uniform gas flow |
| US6905737B2 (en) * | 2002-10-11 | 2005-06-14 | Applied Materials, Inc. | Method of delivering activated species for rapid cyclical deposition |
| EP1420080A3 (de) * | 2002-11-14 | 2005-11-09 | Applied Materials, Inc. | Vorrichtung und Verfahren zu hybriden chemischen Abscheidungsverfahren |
| US6868859B2 (en) * | 2003-01-29 | 2005-03-22 | Applied Materials, Inc. | Rotary gas valve for pulsing a gas |
| US6994319B2 (en) * | 2003-01-29 | 2006-02-07 | Applied Materials, Inc. | Membrane gas valve for pulsing a gas |
| US6926775B2 (en) * | 2003-02-11 | 2005-08-09 | Micron Technology, Inc. | Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces |
| US20040177813A1 (en) | 2003-03-12 | 2004-09-16 | Applied Materials, Inc. | Substrate support lift mechanism |
| KR100505367B1 (ko) * | 2003-03-27 | 2005-08-04 | 주식회사 아이피에스 | 박막증착용 반응용기 |
| KR100522727B1 (ko) * | 2003-03-31 | 2005-10-20 | 주식회사 아이피에스 | 박막증착용 반응용기 |
| US7342984B1 (en) | 2003-04-03 | 2008-03-11 | Zilog, Inc. | Counting clock cycles over the duration of a first character and using a remainder value to determine when to sample a bit of a second character |
| US20040198069A1 (en) | 2003-04-04 | 2004-10-07 | Applied Materials, Inc. | Method for hafnium nitride deposition |
| US7118781B1 (en) * | 2003-04-16 | 2006-10-10 | Cree, Inc. | Methods for controlling formation of deposits in a deposition system and deposition methods including the same |
| US7335396B2 (en) * | 2003-04-24 | 2008-02-26 | Micron Technology, Inc. | Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers |
| KR100526928B1 (ko) * | 2003-07-16 | 2005-11-09 | 삼성전자주식회사 | 식각장치 |
| US7344755B2 (en) * | 2003-08-21 | 2008-03-18 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers |
| US7422635B2 (en) * | 2003-08-28 | 2008-09-09 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces |
| US20050067103A1 (en) * | 2003-09-26 | 2005-03-31 | Applied Materials, Inc. | Interferometer endpoint monitoring device |
| US7323231B2 (en) * | 2003-10-09 | 2008-01-29 | Micron Technology, Inc. | Apparatus and methods for plasma vapor deposition processes |
| US7581511B2 (en) * | 2003-10-10 | 2009-09-01 | Micron Technology, Inc. | Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes |
| US20050095859A1 (en) * | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
| JP4698251B2 (ja) * | 2004-02-24 | 2011-06-08 | アプライド マテリアルズ インコーポレイテッド | 可動又は柔軟なシャワーヘッド取り付け |
| US20050249873A1 (en) * | 2004-05-05 | 2005-11-10 | Demetrius Sarigiannis | Apparatuses and methods for producing chemically reactive vapors used in manufacturing microelectronic devices |
| US8133554B2 (en) | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
| US20050252449A1 (en) * | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
| US20060153995A1 (en) * | 2004-05-21 | 2006-07-13 | Applied Materials, Inc. | Method for fabricating a dielectric stack |
| US8323754B2 (en) * | 2004-05-21 | 2012-12-04 | Applied Materials, Inc. | Stabilization of high-k dielectric materials |
| US20060019033A1 (en) * | 2004-05-21 | 2006-01-26 | Applied Materials, Inc. | Plasma treatment of hafnium-containing materials |
| US8119210B2 (en) * | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
| US7699932B2 (en) | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
| GB2415707A (en) | 2004-06-30 | 2006-01-04 | Arima Optoelectronic | Vertical hydride vapour phase epitaxy deposition using a homogenising diaphragm |
| US20070020890A1 (en) * | 2005-07-19 | 2007-01-25 | Applied Materials, Inc. | Method and apparatus for semiconductor processing |
| US20070049043A1 (en) * | 2005-08-23 | 2007-03-01 | Applied Materials, Inc. | Nitrogen profile engineering in HI-K nitridation for device performance enhancement and reliability improvement |
| US7402534B2 (en) * | 2005-08-26 | 2008-07-22 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
| US7641762B2 (en) * | 2005-09-02 | 2010-01-05 | Applied Materials, Inc. | Gas sealing skirt for suspended showerhead in process chamber |
| US20070065578A1 (en) * | 2005-09-21 | 2007-03-22 | Applied Materials, Inc. | Treatment processes for a batch ALD reactor |
| US7464917B2 (en) * | 2005-10-07 | 2008-12-16 | Appiled Materials, Inc. | Ampoule splash guard apparatus |
| TWI332532B (en) * | 2005-11-04 | 2010-11-01 | Applied Materials Inc | Apparatus and process for plasma-enhanced atomic layer deposition |
| JP4527670B2 (ja) * | 2006-01-25 | 2010-08-18 | 東京エレクトロン株式会社 | 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体 |
| US20070252299A1 (en) * | 2006-04-27 | 2007-11-01 | Applied Materials, Inc. | Synchronization of precursor pulsing and wafer rotation |
| US7798096B2 (en) * | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
| US20070259111A1 (en) * | 2006-05-05 | 2007-11-08 | Singh Kaushal K | Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film |
| US7601648B2 (en) | 2006-07-31 | 2009-10-13 | Applied Materials, Inc. | Method for fabricating an integrated gate dielectric layer for field effect transistors |
| US7776178B2 (en) * | 2006-10-25 | 2010-08-17 | Applied Materials, Inc. | Suspension for showerhead in process chamber |
| US8092695B2 (en) * | 2006-10-30 | 2012-01-10 | Applied Materials, Inc. | Endpoint detection for photomask etching |
| US20080099436A1 (en) * | 2006-10-30 | 2008-05-01 | Michael Grimbergen | Endpoint detection for photomask etching |
| US7775508B2 (en) * | 2006-10-31 | 2010-08-17 | Applied Materials, Inc. | Ampoule for liquid draw and vapor draw with a continuous level sensor |
| US20080206987A1 (en) * | 2007-01-29 | 2008-08-28 | Gelatos Avgerinos V | Process for tungsten nitride deposition by a temperature controlled lid assembly |
| US20090101069A1 (en) * | 2007-10-12 | 2009-04-23 | Suhail Anwar | Rf return plates for backing plate support |
| US8146896B2 (en) * | 2008-10-31 | 2012-04-03 | Applied Materials, Inc. | Chemical precursor ampoule for vapor deposition processes |
| US8778204B2 (en) | 2010-10-29 | 2014-07-15 | Applied Materials, Inc. | Methods for reducing photoresist interference when monitoring a target layer in a plasma process |
| US8961804B2 (en) | 2011-10-25 | 2015-02-24 | Applied Materials, Inc. | Etch rate detection for photomask etching |
| US8808559B2 (en) | 2011-11-22 | 2014-08-19 | Applied Materials, Inc. | Etch rate detection for reflective multi-material layers etching |
| US8900469B2 (en) | 2011-12-19 | 2014-12-02 | Applied Materials, Inc. | Etch rate detection for anti-reflective coating layer and absorber layer etching |
| US9388494B2 (en) * | 2012-06-25 | 2016-07-12 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
| JP6123208B2 (ja) * | 2012-09-28 | 2017-05-10 | 東京エレクトロン株式会社 | 成膜装置 |
| US9805939B2 (en) | 2012-10-12 | 2017-10-31 | Applied Materials, Inc. | Dual endpoint detection for advanced phase shift and binary photomasks |
| US8778574B2 (en) | 2012-11-30 | 2014-07-15 | Applied Materials, Inc. | Method for etching EUV material layers utilized to form a photomask |
| US9399228B2 (en) | 2013-02-06 | 2016-07-26 | Novellus Systems, Inc. | Method and apparatus for purging and plasma suppression in a process chamber |
| JP6184717B2 (ja) * | 2013-03-28 | 2017-08-23 | 株式会社ディスコ | ウェーハ貼着装置 |
| EP2799152B8 (de) * | 2013-05-03 | 2016-02-24 | Oerlikon Metco AG, Wohlen | Bearbeitungsvorrichtung zur Bearbeitung einer Werkstückoberfläche |
| WO2015023435A1 (en) * | 2013-08-12 | 2015-02-19 | Applied Materials, Inc. | Recursive pumping for symmetrical gas exhaust to control critical dimension uniformity in plasma reactors |
| CN105420687B (zh) * | 2016-01-04 | 2018-03-23 | 厦门市三安光电科技有限公司 | 一种mocvd系统 |
| US9758868B1 (en) | 2016-03-10 | 2017-09-12 | Lam Research Corporation | Plasma suppression behind a showerhead through the use of increased pressure |
| CN113832448B (zh) * | 2020-06-23 | 2023-06-09 | 拓荆科技股份有限公司 | 一种半导体薄膜沉积设备及半导体镀膜方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
| JPH0246723A (ja) * | 1988-08-09 | 1990-02-16 | Fujitsu Ltd | 薄膜形成装置 |
| JP2701363B2 (ja) * | 1988-09-12 | 1998-01-21 | 三菱電機株式会社 | 半導体装置の製造方法及びそれに使用する薄膜形成装置 |
| JPH02114530A (ja) * | 1988-10-25 | 1990-04-26 | Mitsubishi Electric Corp | 薄膜形成装置 |
| JP2763222B2 (ja) * | 1991-12-13 | 1998-06-11 | 三菱電機株式会社 | 化学気相成長方法ならびにそのための化学気相成長処理システムおよび化学気相成長装置 |
| US5522932A (en) * | 1993-05-14 | 1996-06-04 | Applied Materials, Inc. | Corrosion-resistant apparatus |
| US5900103A (en) * | 1994-04-20 | 1999-05-04 | Tokyo Electron Limited | Plasma treatment method and apparatus |
| US5558717A (en) * | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
| JPH09202973A (ja) * | 1996-01-24 | 1997-08-05 | Tokyo Electron Ltd | 成膜処理装置の排気システム構造 |
| US5906683A (en) * | 1996-04-16 | 1999-05-25 | Applied Materials, Inc. | Lid assembly for semiconductor processing chamber |
| EP0854210B1 (de) * | 1996-12-19 | 2002-03-27 | Toshiba Ceramics Co., Ltd. | Aufdampfungsvorrichtung zur Herstellung von Dünnfilmen |
| US5968276A (en) * | 1997-07-11 | 1999-10-19 | Applied Materials, Inc. | Heat exchange passage connection |
-
1998
- 1998-05-18 KR KR1019980017858A patent/KR100267885B1/ko not_active IP Right Cessation
-
1999
- 1999-05-17 TW TW088107958A patent/TW483051B/zh not_active IP Right Cessation
- 1999-05-18 US US09/313,765 patent/US6183563B1/en not_active Expired - Lifetime
- 1999-05-18 DE DE69927548T patent/DE69927548T2/de not_active Expired - Fee Related
- 1999-05-18 JP JP11136866A patent/JP3073489B2/ja not_active Expired - Lifetime
- 1999-05-18 EP EP99303880A patent/EP0959150B8/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR19990085443A (ko) | 1999-12-06 |
| EP0959150A3 (de) | 2002-07-24 |
| DE69927548T2 (de) | 2006-06-29 |
| JP2000031061A (ja) | 2000-01-28 |
| EP0959150B1 (de) | 2005-10-05 |
| TW483051B (en) | 2002-04-11 |
| JP3073489B2 (ja) | 2000-08-07 |
| KR100267885B1 (ko) | 2000-11-01 |
| EP0959150B8 (de) | 2006-01-18 |
| US6183563B1 (en) | 2001-02-06 |
| EP0959150A2 (de) | 1999-11-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69927548D1 (de) | Vorrichtung zur Herstellung von Dünnfilmen | |
| DE60028492D1 (de) | Vorrichtung zur Herstellung von Dünnfilmen | |
| DE69924682D1 (de) | Vorrichtung zur Herstellung von Wasserstoff | |
| DE69826478D1 (de) | Verfahren und vorrichtung zur herstellung von dünnen funktionsfilmen | |
| DE69420604T2 (de) | Vorrichtung zur Herstellung von Wasserstoff | |
| DE69623210T2 (de) | Vorrichtung zur herstellung rostfreier stahlbänder | |
| DE69502585D1 (de) | Vorrichtung zur herstellung von folien | |
| DE69422110T2 (de) | Vorrichtung zur herstellung von stempeln | |
| DE60045451D1 (de) | Vorrichtung zur Herstellung von Mikroarrays | |
| DE69525140D1 (de) | Verfahren zur herstellung von ternären filmen | |
| DE59610182D1 (de) | Vorrichtung zur herstellung oxidischer dünnschichten | |
| DE69916725D1 (de) | Vorrichtung zur herstellung von zement | |
| DE69514027D1 (de) | Vorrichtung zur Herstellung Langmuir-Blodgett-Filmen | |
| DE69609920D1 (de) | Verfahren zur herstellung von aromatischen ethern | |
| DE69809122D1 (de) | Vorrichtung zur Herstellung Lagmuir-Blodgett-Filmen | |
| DE59608266D1 (de) | Vorrichtung zur herstellung von tabletten | |
| DE69839988D1 (de) | Vorrichtung zur Herstellung von dünnen Schichten | |
| DE69634479D1 (de) | Verfahren zur herstellung von aryl-difluoromethylethern | |
| DE69518956T2 (de) | Vorrichtung zur Herstellung von fotografischen Filmen | |
| DE69841940D1 (de) | Vorrichtung zur herstellung dünner filme | |
| DE29509617U1 (de) | Vorrichtung zur Herstellung von Scherbeneis | |
| DE69901393D1 (de) | Verfahren zur herstellung von schweisshemmenden pulvern | |
| DE29617600U1 (de) | Vorrichtung zur Herstellung von kaschierten Formteilen | |
| DE69502000D1 (de) | Verfahrn zur herstellung von aufgenommenen bildern | |
| DE69930905D1 (de) | Vorrichtung zur Herstellung von gefaltenen Etiketen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8381 | Inventor (new situation) |
Inventor name: OH, KYU-UN, PYUNGTAEK-SI, KYUNGKI-DO, KR Inventor name: CHOI, WON-SUNG, PYUNGTAEK-SI, KYUNGKI-DO, KR |
|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |