DE69933598D1 - Dielektrikum aus fluoriertem amorphen Kohlenstoff mit einem niedrigen k-Wert, und Verfahren zu dessen Herstellung - Google Patents
Dielektrikum aus fluoriertem amorphen Kohlenstoff mit einem niedrigen k-Wert, und Verfahren zu dessen HerstellungInfo
- Publication number
- DE69933598D1 DE69933598D1 DE69933598T DE69933598T DE69933598D1 DE 69933598 D1 DE69933598 D1 DE 69933598D1 DE 69933598 T DE69933598 T DE 69933598T DE 69933598 T DE69933598 T DE 69933598T DE 69933598 D1 DE69933598 D1 DE 69933598D1
- Authority
- DE
- Germany
- Prior art keywords
- making
- low
- same
- amorphous carbon
- fluorinated amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
- H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3127—Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3146—Carbon layers, e.g. diamond-like layers
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23382 | 1979-03-23 | ||
US09/023,382 US5900290A (en) | 1998-02-13 | 1998-02-13 | Method of making low-k fluorinated amorphous carbon dielectric |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69933598D1 true DE69933598D1 (de) | 2006-11-30 |
DE69933598T2 DE69933598T2 (de) | 2007-08-23 |
Family
ID=21814764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69933598T Expired - Fee Related DE69933598T2 (de) | 1998-02-13 | 1999-01-21 | Dielektrikum aus fluoriertem amorphen Kohlenstoff mit einem niedrigen k-Wert, und Verfahren zu dessen Herstellung |
Country Status (6)
Country | Link |
---|---|
US (1) | US5900290A (de) |
EP (1) | EP0936282B1 (de) |
JP (1) | JPH11251308A (de) |
KR (1) | KR100283007B1 (de) |
DE (1) | DE69933598T2 (de) |
TW (1) | TW414812B (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5989998A (en) * | 1996-08-29 | 1999-11-23 | Matsushita Electric Industrial Co., Ltd. | Method of forming interlayer insulating film |
JP3429171B2 (ja) * | 1997-11-20 | 2003-07-22 | 東京エレクトロン株式会社 | プラズマ処理方法及び半導体デバイスの製造方法 |
TW430882B (en) * | 1997-11-20 | 2001-04-21 | Tokyo Electron Ltd | Plasma film forming method |
JP3574734B2 (ja) * | 1997-11-27 | 2004-10-06 | 東京エレクトロン株式会社 | 半導体デバイスの製造方法 |
US6147407A (en) * | 1998-03-27 | 2000-11-14 | Lucent Technologies Inc. | Article comprising fluorinated amorphous carbon and process for fabricating article |
US6184157B1 (en) * | 1998-06-01 | 2001-02-06 | Sharp Laboratories Of America, Inc. | Stress-loaded film and method for same |
SG81991A1 (en) * | 1999-05-25 | 2001-07-24 | Tokyo Electron Ltd | Method for producing insulator film |
CN1170003C (zh) * | 1999-06-18 | 2004-10-06 | 日新电机株式会社 | 碳膜及其形成方法以及碳膜被覆物品及其制造方法 |
DE69940114D1 (de) * | 1999-08-17 | 2009-01-29 | Applied Materials Inc | Oberflächenbehandlung von kohlenstoffdotierten SiO2-Filmen zur Erhöhung der Stabilität während der O2-Veraschung |
US6602806B1 (en) | 1999-08-17 | 2003-08-05 | Applied Materials, Inc. | Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film |
KR100541541B1 (ko) * | 1999-08-26 | 2006-01-12 | 삼성전자주식회사 | 플라즈마 증착장비의 프로세스 챔버 |
JP4140674B2 (ja) * | 1999-09-27 | 2008-08-27 | 東京エレクトロン株式会社 | 多孔質アモルファス膜の観察方法及びその観察装置 |
US6303518B1 (en) | 1999-09-30 | 2001-10-16 | Novellus Systems, Inc. | Methods to improve chemical vapor deposited fluorosilicate glass (FSG) film adhesion to metal barrier or etch stop/diffusion barrier layers |
US6296906B1 (en) | 1999-09-30 | 2001-10-02 | Novellus Systems, Inc. | Annealing process for low-k dielectric film |
WO2001040537A1 (en) * | 1999-11-30 | 2001-06-07 | The Regents Of The University Of California | Method for producing fluorinated diamond-like carbon films |
US20020005539A1 (en) | 2000-04-04 | 2002-01-17 | John Whitman | Spin coating for maximum fill characteristic yielding a planarized thin film surface |
US6458718B1 (en) | 2000-04-28 | 2002-10-01 | Asm Japan K.K. | Fluorine-containing materials and processes |
US6486078B1 (en) | 2000-08-22 | 2002-11-26 | Advanced Micro Devices, Inc. | Super critical drying of low k materials |
US6632478B2 (en) | 2001-02-22 | 2003-10-14 | Applied Materials, Inc. | Process for forming a low dielectric constant carbon-containing film |
CN1643030A (zh) * | 2001-04-06 | 2005-07-20 | 霍尼韦尔国际公司 | 低介电常数材料及其制备方法 |
JP4758938B2 (ja) * | 2001-08-30 | 2011-08-31 | 東京エレクトロン株式会社 | 絶縁膜の形成方法及び絶縁膜の形成装置 |
US20040247896A1 (en) * | 2001-12-31 | 2004-12-09 | Paul Apen | Organic compositions |
AU2003299296A1 (en) * | 2002-11-29 | 2004-06-23 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer |
US20060166491A1 (en) * | 2005-01-21 | 2006-07-27 | Kensaku Ida | Dual damascene interconnection having low k layer and cap layer formed in a common PECVD process |
DE102005034764B4 (de) * | 2005-07-26 | 2012-08-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung von funktionalen Fluor-Kohlenstoff-Polymerschichten mittels Plasmapolymerisation von Perfluorocycloalkanen und damit beschichtete Substrate |
US7951616B2 (en) * | 2006-03-28 | 2011-05-31 | Lam Research Corporation | Process for wafer temperature verification in etch tools |
US8206996B2 (en) | 2006-03-28 | 2012-06-26 | Lam Research Corporation | Etch tool process indicator method and apparatus |
KR101669470B1 (ko) | 2009-10-14 | 2016-10-26 | 삼성전자주식회사 | 금속 실리사이드층을 포함하는 반도체 소자 |
US9520372B1 (en) | 2015-07-20 | 2016-12-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer level package (WLP) and method for forming the same |
CN110612596B (zh) * | 2017-04-13 | 2023-08-15 | 应用材料公司 | 用于沉积低介电常数膜的方法与设备 |
KR20230169654A (ko) | 2022-06-09 | 2023-12-18 | 충남대학교산학협력단 | 고유전 비정질 불소화 탄소 박막, 이의 제조방법 및 이를 이용한 반도체 또는 커패시터 소자 |
KR20240037610A (ko) | 2022-09-15 | 2024-03-22 | 충남대학교산학협력단 | 고유전 비정질 불소화 탄소 박막 게이트 유전층을 갖는 반도체 소자 및 그 제조방법 |
KR20240037612A (ko) | 2022-09-15 | 2024-03-22 | 충남대학교산학협력단 | 고유전 비정질 불소화 탄소 박막을 이용한 커패시터, 그 제조방법 및 이를 이용한 반도체 |
KR20240037609A (ko) | 2022-09-15 | 2024-03-22 | 충남대학교산학협력단 | 고유전 비정질 불소화 탄소 초박막층을 포함하는 반도체 구조물과 반도체 소자 및 그 제조방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62180073A (ja) * | 1986-02-03 | 1987-08-07 | Ricoh Co Ltd | 非晶質炭素膜およびその製造方法 |
JP2962851B2 (ja) * | 1990-04-26 | 1999-10-12 | キヤノン株式会社 | 光受容部材 |
CA2157257C (en) * | 1994-09-12 | 1999-08-10 | Kazuhiko Endo | Semiconductor device with amorphous carbon layer and method of fabricating the same |
JP2737720B2 (ja) * | 1995-10-12 | 1998-04-08 | 日本電気株式会社 | 薄膜形成方法及び装置 |
-
1998
- 1998-02-13 US US09/023,382 patent/US5900290A/en not_active Expired - Fee Related
- 1998-11-27 JP JP10338211A patent/JPH11251308A/ja active Pending
- 1998-12-08 TW TW087120344A patent/TW414812B/zh not_active IP Right Cessation
-
1999
- 1999-01-21 EP EP99300444A patent/EP0936282B1/de not_active Expired - Lifetime
- 1999-01-21 DE DE69933598T patent/DE69933598T2/de not_active Expired - Fee Related
- 1999-02-03 KR KR1019990003534A patent/KR100283007B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR19990072395A (ko) | 1999-09-27 |
KR100283007B1 (ko) | 2001-02-15 |
DE69933598T2 (de) | 2007-08-23 |
US5900290A (en) | 1999-05-04 |
TW414812B (en) | 2000-12-11 |
EP0936282A2 (de) | 1999-08-18 |
EP0936282A3 (de) | 2001-06-27 |
EP0936282B1 (de) | 2006-10-18 |
JPH11251308A (ja) | 1999-09-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |