DE69936687D1 - Vorrichtung und Verfahren zur Mehrfachbelichtung - Google Patents

Vorrichtung und Verfahren zur Mehrfachbelichtung

Info

Publication number
DE69936687D1
DE69936687D1 DE69936687T DE69936687T DE69936687D1 DE 69936687 D1 DE69936687 D1 DE 69936687D1 DE 69936687 T DE69936687 T DE 69936687T DE 69936687 T DE69936687 T DE 69936687T DE 69936687 D1 DE69936687 D1 DE 69936687D1
Authority
DE
Germany
Prior art keywords
multiple exposure
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69936687T
Other languages
English (en)
Other versions
DE69936687T2 (de
Inventor
Mitsuro Sugita
Miyoko Kawashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP20134398A external-priority patent/JP3296296B2/ja
Priority claimed from JP18424098A external-priority patent/JP3647272B2/ja
Priority claimed from JP18423998A external-priority patent/JP3647271B2/ja
Priority claimed from JP18423598A external-priority patent/JP3647270B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69936687D1 publication Critical patent/DE69936687D1/de
Publication of DE69936687T2 publication Critical patent/DE69936687T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
DE69936687T 1998-06-30 1999-06-29 Vorrichtung und Verfahren zur Mehrfachbelichtung Expired - Fee Related DE69936687T2 (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP20134398A JP3296296B2 (ja) 1998-06-30 1998-06-30 露光方法及び露光装置
JP18424098A JP3647272B2 (ja) 1998-06-30 1998-06-30 露光方法及び露光装置
JP18423998 1998-06-30
JP20134398 1998-06-30
JP18424098 1998-06-30
JP18423998A JP3647271B2 (ja) 1998-06-30 1998-06-30 露光方法及び露光装置
JP18423598A JP3647270B2 (ja) 1998-06-30 1998-06-30 露光方法及び露光装置
JP18423598 1998-06-30

Publications (2)

Publication Number Publication Date
DE69936687D1 true DE69936687D1 (de) 2007-09-13
DE69936687T2 DE69936687T2 (de) 2008-04-30

Family

ID=27475153

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69936687T Expired - Fee Related DE69936687T2 (de) 1998-06-30 1999-06-29 Vorrichtung und Verfahren zur Mehrfachbelichtung

Country Status (3)

Country Link
US (3) US6930754B1 (de)
EP (1) EP0969327B1 (de)
DE (1) DE69936687T2 (de)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6930754B1 (en) * 1998-06-30 2005-08-16 Canon Kabushiki Kaisha Multiple exposure method
DE10043315C1 (de) * 2000-09-02 2002-06-20 Zeiss Carl Projektionsbelichtungsanlage
JP2002324743A (ja) 2001-04-24 2002-11-08 Canon Inc 露光方法及び装置
WO2002088843A2 (en) * 2001-04-24 2002-11-07 Canon Kabushiki Kaisha Exposure method and apparatus
TW530336B (en) 2001-08-21 2003-05-01 Asml Masktools Bv Lithographic method and lithographic apparatus
TWI315027B (en) 2002-04-23 2009-09-21 Canon Kabushiki Kaish Mask designing method, and exposure method for illuminatiing a mask and exposing an object
WO2003102696A2 (en) * 2002-05-29 2003-12-11 Massachusetts Institute Of Technology A method for photolithography using multiple illuminations and a single fine feature mask
US6992750B2 (en) 2002-12-10 2006-01-31 Canon Kabushiki Kaisha Exposure apparatus and method
EP1467253A1 (de) * 2003-04-07 2004-10-13 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
WO2005036272A1 (de) * 2003-09-18 2005-04-21 Carl Zeiss Smt Ag Verfahren zur strahlungsbehandlung eines optischen systems
JP5065596B2 (ja) 2003-10-29 2012-11-07 カール・ツァイス・エスエムティー・ゲーエムベーハー ダイアフラム交換装置
US20080038675A1 (en) * 2004-02-20 2008-02-14 Nikon Corporation Exposure Method, Exposure Apparatus, Exposure System and Device Manufacturing Method
DE102004015930B4 (de) * 2004-03-31 2008-08-28 Qimonda Ag Verfahren zur lithographischen Projektion eines Musters von isolierten oder semi-isolierten Strukturelementen und Verwendung des Verfahrens zur Herstellung einer integrierten Schaltung
DE102004020983A1 (de) * 2004-04-23 2005-11-17 Carl Zeiss Smt Ag Verfahren zur Strukturbelichtung einer lichtempfindlichen Schicht
DE102004035595B4 (de) * 2004-04-09 2008-02-07 Carl Zeiss Smt Ag Verfahren zur Justage eines Projektionsobjektives
US7372547B2 (en) * 2004-04-27 2008-05-13 Lsi Corporation Process and apparatus for achieving single exposure pattern transfer using maskless optical direct write lithography
US7312851B2 (en) * 2004-06-23 2007-12-25 Nikon Corporation Projection optical system, exposure apparatus, and exposure method in which a reflective projection optical system has a non-circular aperture stop
US7387871B2 (en) 2004-08-26 2008-06-17 Seagate Technology Llc Mask complementary multiple exposure technique
US7259106B2 (en) * 2004-09-10 2007-08-21 Versatilis Llc Method of making a microelectronic and/or optoelectronic circuitry sheet
US7372540B2 (en) * 2004-10-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5106747B2 (ja) * 2004-10-27 2012-12-26 ルネサスエレクトロニクス株式会社 パターン形成方法、半導体装置の製造方法及び露光用マスクセット
US7274434B2 (en) * 2004-11-24 2007-09-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7253880B2 (en) * 2004-11-24 2007-08-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102005042005A1 (de) * 2004-12-23 2006-07-06 Carl Zeiss Smt Ag Hochaperturiges Objektiv mit obskurierter Pupille
US7312852B2 (en) 2004-12-28 2007-12-25 Asml Netherlands B.V. Polarized radiation in lithographic apparatus and device manufacturing method
US7345740B2 (en) * 2004-12-28 2008-03-18 Asml Netherlands B.V. Polarized radiation in lithographic apparatus and device manufacturing method
JP2006245270A (ja) * 2005-03-03 2006-09-14 Canon Inc 露光装置及び露光方法
US8081295B2 (en) * 2005-03-15 2011-12-20 Carl Zeiss Smt Gmbh Projection exposure method and projection exposure system therefor
KR20080015143A (ko) * 2005-06-10 2008-02-18 칼 짜이스 에스엠테 아게 다용도 프로젝션 시스템
DE102005031084A1 (de) * 2005-06-28 2007-01-04 Carl Zeiss Smt Ag Mikrolithografisches Belichtungsverfahren sowie Projektionsbelichtungsanlage zur Durchführung des Verfahrens
KR100729263B1 (ko) * 2005-07-14 2007-06-15 삼성전자주식회사 기판 노광 장치
US7310131B2 (en) * 2005-08-02 2007-12-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7537870B2 (en) * 2005-08-05 2009-05-26 Chartered Semiconductor Manufacturing, Ltd. Lithography process optimization and system
FR2890461B1 (fr) * 2005-09-05 2008-12-26 Sagem Defense Securite Obturateur et illuminateur d'un dispositif de photolithographie
US7723014B2 (en) * 2005-10-26 2010-05-25 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for photolithography in semiconductor manufacturing
US20070103789A1 (en) * 2005-11-10 2007-05-10 Asml Netherlands B.V. Optical system, lithographic apparatus and method for projecting
US7724351B2 (en) 2006-01-30 2010-05-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and exchangeable optical element
CN101479667B (zh) 2006-07-03 2011-12-07 卡尔蔡司Smt有限责任公司 修正/修复光刻投影物镜的方法
KR100811373B1 (ko) * 2006-09-08 2008-03-07 주식회사 하이닉스반도체 노광 마스크 및 이를 이용한 반도체 소자의 제조 방법
US7903234B2 (en) * 2006-11-27 2011-03-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and computer program product
JP5154564B2 (ja) 2006-12-01 2013-02-27 カール・ツァイス・エスエムティー・ゲーエムベーハー 像収差を低減するための交換可能で操作可能な補正構成を有する光学システム
DE102007009867A1 (de) 2007-02-28 2008-09-11 Carl Zeiss Smt Ag Abbildungsvorrichtung mit auswechselbaren Blenden sowie Verfahren hierzu
JP2009026827A (ja) * 2007-07-17 2009-02-05 Toshiba Corp 露光装置の検査方法、及び露光装置
US20090033892A1 (en) * 2007-08-02 2009-02-05 Advanced Micro Devices, Inc. Double exposure of a photoresist layer using a single reticle
US8082524B2 (en) * 2008-04-15 2011-12-20 Luminescent Technologies, Inc. Mask patterns for use in multiple-exposure lithography
EP2202580B1 (de) * 2008-12-23 2011-06-22 Carl Zeiss SMT GmbH Beleuchtungssystem eines mikrolithographischen Projektionsbelichtungsgeräts
US8683396B2 (en) * 2009-07-22 2014-03-25 Synopsys, Inc. Determining source patterns for use in photolithography
KR102074476B1 (ko) * 2009-11-24 2020-02-06 가부시키가이샤 니콘 결상 광학계, 노광 장치 및 디바이스 제조 방법
JP5330205B2 (ja) * 2009-11-26 2013-10-30 株式会社東芝 露光方法
US8463016B2 (en) * 2010-02-05 2013-06-11 Luminescent Technologies, Inc. Extending the field of view of a mask-inspection image
US8498469B2 (en) * 2010-03-01 2013-07-30 Synopsys, Inc. Full-field mask error enhancement function
US8612903B2 (en) 2010-09-14 2013-12-17 Luminescent Technologies, Inc. Technique for repairing a reflective photo-mask
US8555214B2 (en) 2010-09-14 2013-10-08 Luminescent Technologies, Inc. Technique for analyzing a reflective photo-mask
US8458622B2 (en) * 2010-11-29 2013-06-04 Luminescent Technologies, Inc. Photo-mask acceptance technique
US9005852B2 (en) 2012-09-10 2015-04-14 Dino Technology Acquisition Llc Technique for repairing a reflective photo-mask
US8653454B2 (en) 2011-07-13 2014-02-18 Luminescent Technologies, Inc. Electron-beam image reconstruction
SG11201503354XA (en) * 2012-10-29 2015-06-29 Univ Northwestern Heat actuated and projected lithography systems and methods
US9091935B2 (en) 2013-03-11 2015-07-28 Kla-Tencor Corporation Multistage extreme ultra-violet mask qualification
US9494854B2 (en) 2013-03-14 2016-11-15 Kla-Tencor Corporation Technique for repairing an EUV photo-mask
CN103345123B (zh) * 2013-06-27 2015-04-08 上海华力微电子有限公司 提高光刻工艺能力的系统及方法
CN103345122B (zh) * 2013-06-27 2015-08-26 上海华力微电子有限公司 增强光刻工艺能力的系统及方法
CN103336410B (zh) * 2013-06-27 2015-05-06 上海华力微电子有限公司 增强光刻工艺能力的装置及利用该装置进行的光刻工艺
GB2528675A (en) * 2014-07-25 2016-02-03 Starlight Xpress Ltd Optical Apparatus
TWI627440B (zh) * 2017-05-17 2018-06-21 力晶科技股份有限公司 影像亮度重配模組及影像亮度重配方法
JP2019033971A (ja) * 2017-08-18 2019-03-07 ソニー・オリンパスメディカルソリューションズ株式会社 内視鏡装置
US11348224B2 (en) * 2019-09-11 2022-05-31 Applied Materials Israel Ltd. Mask inspection of a semiconductor specimen
CN116774535B (zh) * 2023-08-18 2023-11-14 上海图双精密装备有限公司 一种用于掩模对准光刻设备的照明系统

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2406236A1 (fr) 1976-12-10 1979-05-11 Thomson Csf Dispositif optique a source coherente pour le transfert rapide de motifs sur substrats, applique a la realisation de composants et circuits a microstructures
FR2465241A1 (fr) * 1979-09-10 1981-03-20 Thomson Csf Dispositif illuminateur destine a fournir un faisceau d'eclairement a distribution d'intensite ajustable et systeme de transfert de motifs comprenant un tel dispositif
US4908656A (en) * 1988-01-21 1990-03-13 Nikon Corporation Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
JP2536023B2 (ja) * 1988-02-29 1996-09-18 株式会社ニコン 露光装置、及び露光方法
US5264898A (en) * 1991-08-29 1993-11-23 Mitsubishi Denki Kabushiki Kaisha Projection exposure apparatus
KR950004968B1 (ko) * 1991-10-15 1995-05-16 가부시키가이샤 도시바 투영노광 장치
JP3158691B2 (ja) * 1992-08-07 2001-04-23 株式会社ニコン 露光装置及び方法、並びに照明光学装置
US5415835A (en) 1992-09-16 1995-05-16 University Of New Mexico Method for fine-line interferometric lithography
JP2993320B2 (ja) 1993-05-27 1999-12-20 キヤノン株式会社 露光装置及びそれを用いた半導体素子の製造方法
US5677757A (en) * 1994-03-29 1997-10-14 Nikon Corporation Projection exposure apparatus
JPH0757993A (ja) * 1993-08-13 1995-03-03 Nikon Corp 投影露光装置
US5642183A (en) * 1993-08-27 1997-06-24 Sharp Kabushiki Kaisha Spatial filter used in a reduction-type projection printing apparatus
KR0153796B1 (ko) * 1993-09-24 1998-11-16 사토 후미오 노광장치 및 노광방법
JPH07226362A (ja) 1994-02-10 1995-08-22 Ricoh Co Ltd フォトレジストパターン形成方法
JP2829252B2 (ja) * 1994-03-07 1998-11-25 現代電子産業株式会社 露光装置用組立式光束調整器具
JPH07253649A (ja) 1994-03-15 1995-10-03 Toshiba Corp 露光用マスク及び投影露光方法
JP3376690B2 (ja) * 1994-04-28 2003-02-10 株式会社ニコン 露光装置、及び該装置を用いた露光方法
KR100377206B1 (ko) 1994-08-26 2003-06-09 소니 가부시끼 가이샤 패턴형성방법및이방법을이용한반도체디바이스제조방법
US5680588A (en) * 1995-06-06 1997-10-21 International Business Machines Corporation Method and system for optimizing illumination in an optical photolithography projection imaging system
JPH0955350A (ja) 1995-08-14 1997-02-25 Sony Corp 露光方法および露光装置
US5815247A (en) 1995-09-21 1998-09-29 Siemens Aktiengesellschaft Avoidance of pattern shortening by using off axis illumination with dipole and polarizing apertures
JPH09199390A (ja) * 1996-01-16 1997-07-31 Hitachi Ltd パターン形成方法、投影露光装置および半導体装置の製造方法
KR980005334A (ko) 1996-06-04 1998-03-30 고노 시게오 노광 방법 및 노광 장치
US5688409A (en) 1996-06-21 1997-11-18 Intel Corporation Processes for fabricating device layers with ultrafine features
US6259513B1 (en) * 1996-11-25 2001-07-10 Svg Lithography Systems, Inc. Illumination system with spatially controllable partial coherence
JPH10233361A (ja) 1996-12-16 1998-09-02 Toshiba Corp 露光方法と露光用マスク
US6218089B1 (en) 1998-05-22 2001-04-17 Micron Technology, Inc. Photolithographic method
US6930754B1 (en) * 1998-06-30 2005-08-16 Canon Kabushiki Kaisha Multiple exposure method
US6403285B1 (en) * 1999-12-17 2002-06-11 Micron Technology, Inc. Method for exposing semiconductor wafers in a manner that promotes radial processing uniformity

Also Published As

Publication number Publication date
US6930754B1 (en) 2005-08-16
DE69936687T2 (de) 2008-04-30
US20050099614A1 (en) 2005-05-12
EP0969327A2 (de) 2000-01-05
EP0969327B1 (de) 2007-08-01
US7505112B2 (en) 2009-03-17
US7023522B2 (en) 2006-04-04
US20080198350A1 (en) 2008-08-21
EP0969327A3 (de) 2002-10-23

Similar Documents

Publication Publication Date Title
DE69936687D1 (de) Vorrichtung und Verfahren zur Mehrfachbelichtung
DE69926195D1 (de) Vorrichtung und Verfahren zur Bildgebung
DE69936274D1 (de) Verfahren und Vorrichtung zur Filmabscheidung
DE69941662D1 (de) Verfahren und Vorrichtung zur automatischen Netzkonfiguration
DE69842100D1 (de) Verfahren und Vorrichtung zur Bildkodierung
DE69913534D1 (de) Verfahren und vorrichtung zur bilderzeugung
DE69822687D1 (de) Vorrichtung und Verfahren zur Zusammenfassung
DE69532916D1 (de) Verfahren und vorrichtung zur bilddarstellung
DE69941565D1 (de) Vorrichtung und verfahren zur spektralen abbildung
DE60045263D1 (de) Vorrichtung und Verfahren zur Gesichtsphotographie
DE69833302D1 (de) Verfahren und Vorrichtung zur Bildsynthese
DE69924896D1 (de) Vorrichtung und Verfahren zur Schallbildlokalisierung
DE69841399D1 (de) Vorrichtung und Verfahren zur Trocknungsbehandlung
DE69930560D1 (de) Verfahren und Vorrichtung zur Mustererkennung
DE60042676D1 (de) Vorrichtung und Verfahren zur Auswahl von Netzwerkeinheiten
DE69840182D1 (de) Vorrichtung und Verfahren zur Bildaufnahme
DE69931004D1 (de) Verfahren und Vorrichtung zur Datenverarbeitung
DE60141796D1 (de) Verfahren und Vorrichtung zur Ladungsträgerstrahlbelichtung
DE69918937D1 (de) Verfahren und Gerät zur Bilderzeugung
DE69837361D1 (de) Verfahren und Vorrichtung zur Bildkodierung
DE69834320D1 (de) Verfahren und Vorrichtung zur Folgeschätzung
DE69940134D1 (de) Vorrichtung und Verfahren zur mehrstufigen Verschachtelung
DE19983717T1 (de) Vorrichtung und Verfahren zur Ausrichtung
DE69942553D1 (de) Vorrichtung und Verfahren zur Zeitmessung
DE69928852D1 (de) Vorrichtung und Verfahren zur Unterstützung der Programmierung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee