DE69937485D1 - Methode zur herstellung zwei- oder dreidimensionaler elektrisch leitender oder halbleitender strukturen, eine löschmethode derselben und ein generator/modulator eines elektrischen feldes zum gebrauch in der herstellungsmethode - Google Patents
Methode zur herstellung zwei- oder dreidimensionaler elektrisch leitender oder halbleitender strukturen, eine löschmethode derselben und ein generator/modulator eines elektrischen feldes zum gebrauch in der herstellungsmethodeInfo
- Publication number
- DE69937485D1 DE69937485D1 DE69937485T DE69937485T DE69937485D1 DE 69937485 D1 DE69937485 D1 DE 69937485D1 DE 69937485 T DE69937485 T DE 69937485T DE 69937485 T DE69937485 T DE 69937485T DE 69937485 D1 DE69937485 D1 DE 69937485D1
- Authority
- DE
- Germany
- Prior art keywords
- structures
- modulator
- generator
- producing
- electrically conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title abstract 3
- 230000005684 electric field Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 2
- 239000000463 material Substances 0.000 abstract 5
- 239000011159 matrix material Substances 0.000 abstract 2
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8221—Three dimensional integrated circuits stacked in different levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
- H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO980385A NO980385D0 (no) | 1998-01-28 | 1998-01-28 | Kretser generert ved omvandling in situ |
NO980385 | 1998-01-28 | ||
NO982518A NO308149B1 (no) | 1998-06-02 | 1998-06-02 | Skalerbar, integrert databehandlingsinnretning |
NO982518 | 1998-06-02 | ||
PCT/NO1999/000022 WO1999044229A1 (en) | 1998-01-28 | 1999-01-28 | A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69937485D1 true DE69937485D1 (de) | 2007-12-20 |
DE69937485T2 DE69937485T2 (de) | 2008-08-21 |
Family
ID=26648814
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69937485T Expired - Fee Related DE69937485T2 (de) | 1998-01-28 | 1999-01-28 | Methode zur herstellung zwei- oder dreidimensionaler elektrisch leitender oder halbleitender strukturen, eine löschmethode derselben und ein generator/modulator eines elektrischen feldes zum gebrauch in der herstellungsmethode |
Country Status (12)
Country | Link |
---|---|
US (3) | US6432739B1 (de) |
EP (2) | EP1051745B1 (de) |
JP (2) | JP4272353B2 (de) |
KR (2) | KR100375864B1 (de) |
CN (2) | CN1171301C (de) |
AT (1) | ATE377842T1 (de) |
AU (2) | AU733522B2 (de) |
CA (2) | CA2319430C (de) |
DE (1) | DE69937485T2 (de) |
HK (2) | HK1035602A1 (de) |
RU (2) | RU2183882C2 (de) |
WO (2) | WO1999044229A1 (de) |
Families Citing this family (131)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6859548B2 (en) | 1996-09-25 | 2005-02-22 | Kabushiki Kaisha Toshiba | Ultrasonic picture processing method and ultrasonic picture processing apparatus |
JP4744757B2 (ja) | 1999-07-21 | 2011-08-10 | イー インク コーポレイション | アクティブマトリクス駆動電子ディスプレイの性能を高めるための蓄電キャパシタの使用 |
US6545291B1 (en) | 1999-08-31 | 2003-04-08 | E Ink Corporation | Transistor design for use in the construction of an electronically driven display |
JP2003513475A (ja) * | 1999-11-02 | 2003-04-08 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 薄膜超小型電子装置間の垂直相互接続を形成する方法及びそのような垂直相互接続を備えた製品 |
EP1136942A1 (de) * | 2000-03-22 | 2001-09-26 | Infineon Technologies AG | Schaltungsanordnung zum Schützen einer Schaltung gegen Analyse und Manipulation |
US7893435B2 (en) | 2000-04-18 | 2011-02-22 | E Ink Corporation | Flexible electronic circuits and displays including a backplane comprising a patterned metal foil having a plurality of apertures extending therethrough |
US7875975B2 (en) * | 2000-08-18 | 2011-01-25 | Polyic Gmbh & Co. Kg | Organic integrated circuit completely encapsulated by multi-layered barrier and included in RFID tag |
JP2004507096A (ja) * | 2000-08-18 | 2004-03-04 | シーメンス アクチエンゲゼルシヤフト | 有機電界効果トランジスタ(ofet),該有機電界効果トランジスタの製造方法、前記有機電界効果トランジスタから形成される集積回路、及び該集積回路の使用 |
KR100394028B1 (ko) * | 2000-12-28 | 2003-08-06 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조방법 |
DE10043204A1 (de) * | 2000-09-01 | 2002-04-04 | Siemens Ag | Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung |
DE10044842A1 (de) * | 2000-09-11 | 2002-04-04 | Siemens Ag | Organischer Gleichrichter, Schaltung, RFID-Tag und Verwendung eines organischen Gleichrichters |
WO2002025750A1 (de) * | 2000-09-22 | 2002-03-28 | Siemens Aktiengesellschaft | Elektrode und/oder leiterbahn für organische bauelemente und herstellungsverfahren dazu |
DE10061299A1 (de) * | 2000-12-08 | 2002-06-27 | Siemens Ag | Vorrichtung zur Feststellung und/oder Weiterleitung zumindest eines Umwelteinflusses, Herstellungsverfahren und Verwendung dazu |
DE10061297C2 (de) * | 2000-12-08 | 2003-05-28 | Siemens Ag | Verfahren zur Sturkturierung eines OFETs |
DE10063721A1 (de) * | 2000-12-20 | 2002-07-11 | Merck Patent Gmbh | Organischer Halbleiter, Herstellungsverfahren dazu und Verwendungen |
DE10105914C1 (de) * | 2001-02-09 | 2002-10-10 | Siemens Ag | Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung |
JP2005509200A (ja) * | 2001-03-26 | 2005-04-07 | シーメンス アクチエンゲゼルシヤフト | 少なくとも2つの有機電子構成エレメントを有する装置、および該装置のための製造方法 |
US6873540B2 (en) * | 2001-05-07 | 2005-03-29 | Advanced Micro Devices, Inc. | Molecular memory cell |
US6781868B2 (en) * | 2001-05-07 | 2004-08-24 | Advanced Micro Devices, Inc. | Molecular memory device |
US6844608B2 (en) | 2001-05-07 | 2005-01-18 | Advanced Micro Devices, Inc. | Reversible field-programmable electric interconnects |
US6855977B2 (en) * | 2001-05-07 | 2005-02-15 | Advanced Micro Devices, Inc. | Memory device with a self-assembled polymer film and method of making the same |
JP4731794B2 (ja) * | 2001-05-07 | 2011-07-27 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | メモリ効果を有するスイッチ素子及び該素子をスイッチングさせる方法 |
CN1276518C (zh) | 2001-05-07 | 2006-09-20 | 先进微装置公司 | 使用复合分子材料的浮置栅极存储装置 |
US6756620B2 (en) * | 2001-06-29 | 2004-06-29 | Intel Corporation | Low-voltage and interface damage-free polymer memory device |
WO2003009359A1 (fr) * | 2001-07-16 | 2003-01-30 | Boris Aronovich Gurovich | Procede de formation d'une structure a couches multiples a parametres predetermines |
US6624457B2 (en) | 2001-07-20 | 2003-09-23 | Intel Corporation | Stepped structure for a multi-rank, stacked polymer memory device and method of making same |
EP1434232B1 (de) * | 2001-08-13 | 2007-09-19 | Advanced Micro Devices, Inc. | Speicherzelle |
US6858481B2 (en) | 2001-08-13 | 2005-02-22 | Advanced Micro Devices, Inc. | Memory device with active and passive layers |
US6806526B2 (en) | 2001-08-13 | 2004-10-19 | Advanced Micro Devices, Inc. | Memory device |
US6838720B2 (en) * | 2001-08-13 | 2005-01-04 | Advanced Micro Devices, Inc. | Memory device with active passive layers |
US6768157B2 (en) | 2001-08-13 | 2004-07-27 | Advanced Micro Devices, Inc. | Memory device |
DE10151036A1 (de) * | 2001-10-16 | 2003-05-08 | Siemens Ag | Isolator für ein organisches Elektronikbauteil |
DE10151440C1 (de) | 2001-10-18 | 2003-02-06 | Siemens Ag | Organisches Elektronikbauteil, Verfahren zu seiner Herstellung und seine Verwendung |
DE10160732A1 (de) * | 2001-12-11 | 2003-06-26 | Siemens Ag | Organischer Feld-Effekt-Transistor mit verschobener Schwellwertspannung und Verwendung dazu |
KR100433407B1 (ko) * | 2002-02-06 | 2004-05-31 | 삼성광주전자 주식회사 | 업라이트형 진공청소기 |
DE10212639A1 (de) * | 2002-03-21 | 2003-10-16 | Siemens Ag | Vorrichtung und Verfahren zur Laserstrukturierung von Funktionspolymeren und Verwendungen |
DE10212640B4 (de) * | 2002-03-21 | 2004-02-05 | Siemens Ag | Logische Bauteile aus organischen Feldeffekttransistoren |
RU2205469C1 (ru) * | 2002-04-18 | 2003-05-27 | Гурович Борис Аронович | Способ получения объемной проводящей структуры |
DE10226370B4 (de) * | 2002-06-13 | 2008-12-11 | Polyic Gmbh & Co. Kg | Substrat für ein elektronisches Bauteil, Verwendung des Substrates, Verfahren zur Erhöhung der Ladungsträgermobilität und Organischer Feld-Effekt Transistor (OFET) |
US6661024B1 (en) * | 2002-07-02 | 2003-12-09 | Motorola, Inc. | Integrated circuit including field effect transistor and method of manufacture |
WO2004017439A2 (de) * | 2002-07-29 | 2004-02-26 | Siemens Aktiengesellschaft | Elektronisches bauteil mit vorwiegend organischen funktionsmaterialien und herstellungsverfahren dazu |
EP1526902B1 (de) * | 2002-08-08 | 2008-05-21 | PolyIC GmbH & Co. KG | Elektronisches gerät |
JP2005537637A (ja) | 2002-08-23 | 2005-12-08 | ジーメンス アクツィエンゲゼルシャフト | 過電圧保護用の有機構成部品および関連する回路 |
US7012276B2 (en) * | 2002-09-17 | 2006-03-14 | Advanced Micro Devices, Inc. | Organic thin film Zener diodes |
EP1559147B1 (de) | 2002-10-02 | 2014-11-12 | Leonhard Kurz Stiftung & Co. KG | Folie mit organischen halbleitern |
US6870183B2 (en) | 2002-11-04 | 2005-03-22 | Advanced Micro Devices, Inc. | Stacked organic memory devices and methods of operating and fabricating |
US20060118778A1 (en) * | 2002-11-05 | 2006-06-08 | Wolfgang Clemens | Organic electronic component with high-resolution structuring and method for the production thereof |
DE10253154A1 (de) * | 2002-11-14 | 2004-05-27 | Siemens Ag | Messgerät zur Bestimmung eines Analyten in einer Flüssigkeitsprobe |
US20060035423A1 (en) * | 2002-11-19 | 2006-02-16 | Walter Fix | Organic electronic component comprising the same organic material for at least two functional layers |
DE50306538D1 (de) * | 2002-11-19 | 2007-03-29 | Polyic Gmbh & Co Kg | Organische elektronische schaltung mit stukturierter halbleitender funktionsschicht und herstellungsverfahren dazu |
US6905908B2 (en) * | 2002-12-26 | 2005-06-14 | Motorola, Inc. | Method of fabricating organic field effect transistors |
DE10300521A1 (de) * | 2003-01-09 | 2004-07-22 | Siemens Ag | Organoresistiver Speicher |
EP1586127B1 (de) * | 2003-01-21 | 2007-05-02 | PolyIC GmbH & Co. KG | Organisches elektronikbauteil und verfahren zur herstellung organischer elektronik |
DE10302149A1 (de) * | 2003-01-21 | 2005-08-25 | Siemens Ag | Verwendung leitfähiger Carbon-black/Graphit-Mischungen für die Herstellung von low-cost Elektronik |
MXPA05007878A (es) * | 2003-01-29 | 2006-02-08 | Polylc Gmbh & Co Kg | Unidad de memoria organica y circuito impulsor para la misma. |
JP2004311845A (ja) * | 2003-04-09 | 2004-11-04 | National Institute Of Advanced Industrial & Technology | 発電機能を有する可視光透過構造体 |
US7049153B2 (en) * | 2003-04-23 | 2006-05-23 | Micron Technology, Inc. | Polymer-based ferroelectric memory |
JP4583004B2 (ja) * | 2003-05-21 | 2010-11-17 | 株式会社 日立ディスプレイズ | アクティブ・マトリクス基板の製造方法 |
DE10330064B3 (de) * | 2003-07-03 | 2004-12-09 | Siemens Ag | Logikgatter mit potentialfreier Gate-Elektrode für organische integrierte Schaltungen |
DE10330062A1 (de) * | 2003-07-03 | 2005-01-27 | Siemens Ag | Verfahren und Vorrichtung zur Strukturierung von organischen Schichten |
RU2243613C1 (ru) * | 2003-07-16 | 2004-12-27 | Гурович Борис Аронович | Способ формирования объемной структуры |
DE10338277A1 (de) * | 2003-08-20 | 2005-03-17 | Siemens Ag | Organischer Kondensator mit spannungsgesteuerter Kapazität |
DE10339036A1 (de) | 2003-08-25 | 2005-03-31 | Siemens Ag | Organisches elektronisches Bauteil mit hochaufgelöster Strukturierung und Herstellungsverfahren dazu |
DE10340643B4 (de) * | 2003-09-03 | 2009-04-16 | Polyic Gmbh & Co. Kg | Druckverfahren zur Herstellung einer Doppelschicht für Polymerelektronik-Schaltungen, sowie dadurch hergestelltes elektronisches Bauelement mit Doppelschicht |
DE10340644B4 (de) * | 2003-09-03 | 2010-10-07 | Polyic Gmbh & Co. Kg | Mechanische Steuerelemente für organische Polymerelektronik |
US6989336B2 (en) * | 2003-09-24 | 2006-01-24 | E. I. Du Pont De Nemours And Company | Process for laminating a dielectric layer onto a semiconductor |
JP4729843B2 (ja) * | 2003-10-15 | 2011-07-20 | 凸版印刷株式会社 | 薄膜トランジスタの製造方法 |
DE10349963A1 (de) | 2003-10-24 | 2005-06-02 | Leonhard Kurz Gmbh & Co. Kg | Verfahren zur Herstellung einer Folie |
DE102004002024A1 (de) * | 2004-01-14 | 2005-08-11 | Siemens Ag | Organischer Transistor mit selbstjustierender Gate-Elektrode und Verfahren zu dessen Herstellung |
JP4501444B2 (ja) * | 2004-02-04 | 2010-07-14 | ソニー株式会社 | トランジスタにおける配線構造の形成方法及び電界効果型トランジスタの製造方法 |
CN1998095B (zh) | 2004-04-20 | 2010-11-03 | 视声公司 | 阵列式超声换能器 |
US7122489B2 (en) * | 2004-05-12 | 2006-10-17 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method of composite sheet material using ultrafast laser pulses |
JP2007537552A (ja) * | 2004-05-14 | 2007-12-20 | ウェーブゼロ, インコーポレイテッド | 無線周波数アンテナおよび識別タグ、ならびに無線周波数アンテナおよび無線周波数タグの製造方法 |
US7019328B2 (en) * | 2004-06-08 | 2006-03-28 | Palo Alto Research Center Incorporated | Printed transistors |
GB0413749D0 (en) * | 2004-06-19 | 2004-07-21 | Koninkl Philips Electronics Nv | Active matrix electronic array device |
DE102004040831A1 (de) * | 2004-08-23 | 2006-03-09 | Polyic Gmbh & Co. Kg | Funketikettfähige Umverpackung |
RU2284267C2 (ru) * | 2004-11-10 | 2006-09-27 | Броня Цой | Материал для компонентов радиоэлектронных приборов |
DE102004059467A1 (de) * | 2004-12-10 | 2006-07-20 | Polyic Gmbh & Co. Kg | Gatter aus organischen Feldeffekttransistoren |
DE102004059464A1 (de) * | 2004-12-10 | 2006-06-29 | Polyic Gmbh & Co. Kg | Elektronikbauteil mit Modulator |
DE102004059465A1 (de) * | 2004-12-10 | 2006-06-14 | Polyic Gmbh & Co. Kg | Erkennungssystem |
DE102004063435A1 (de) | 2004-12-23 | 2006-07-27 | Polyic Gmbh & Co. Kg | Organischer Gleichrichter |
DE102005009820A1 (de) * | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | Elektronikbaugruppe mit organischen Logik-Schaltelementen |
DE102005009819A1 (de) | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | Elektronikbaugruppe |
DE102005017655B4 (de) * | 2005-04-15 | 2008-12-11 | Polyic Gmbh & Co. Kg | Mehrschichtiger Verbundkörper mit elektronischer Funktion |
KR100719346B1 (ko) * | 2005-04-19 | 2007-05-17 | 삼성전자주식회사 | 저항 메모리 셀, 그 형성 방법 및 이를 이용한 저항 메모리배열 |
US7420442B1 (en) * | 2005-06-08 | 2008-09-02 | Sandia Corporation | Micromachined microwave signal control device and method for making same |
NO20052904L (no) * | 2005-06-14 | 2006-12-15 | Thin Film Electronics Asa | Et ikke-flyktig elektrisk minnesystem |
DE102005031448A1 (de) | 2005-07-04 | 2007-01-11 | Polyic Gmbh & Co. Kg | Aktivierbare optische Schicht |
EP1742226B1 (de) * | 2005-07-08 | 2010-09-15 | STMicroelectronics Srl | Verfahren zur Realisierung einer elektrischen Verbindung in einer elektronischen Halbleitervorrichtung zwischen einem nanometrischen Schaltungsarchitektur und elektronischen Standardkomponenten |
DE102005035589A1 (de) | 2005-07-29 | 2007-02-01 | Polyic Gmbh & Co. Kg | Verfahren zur Herstellung eines elektronischen Bauelements |
DE102005035590A1 (de) * | 2005-07-29 | 2007-02-01 | Polyic Gmbh & Co. Kg | Elektronisches Bauelement |
DE102005042166A1 (de) * | 2005-09-06 | 2007-03-15 | Polyic Gmbh & Co.Kg | Organisches Bauelement und ein solches umfassende elektrische Schaltung |
DE102005044306A1 (de) * | 2005-09-16 | 2007-03-22 | Polyic Gmbh & Co. Kg | Elektronische Schaltung und Verfahren zur Herstellung einer solchen |
CA2935422C (en) | 2005-11-02 | 2019-01-08 | Visualsonics Inc. | High frequency array ultrasound system |
JP2007252249A (ja) * | 2006-03-22 | 2007-10-04 | Oki Electric Ind Co Ltd | 有機化合物合成装置,光照射装置,有機化合物合成用基板および有機化合物の合成方法 |
US20070279230A1 (en) * | 2006-06-01 | 2007-12-06 | Wavezero, Inc. | System and Method for Attaching Radiofrequency Identification Chips to Metalized Antenna |
JP2008021814A (ja) * | 2006-07-13 | 2008-01-31 | Hitachi Ltd | 電界効果トランジスタ、有機薄膜トランジスタおよび有機トランジスタの製造方法 |
TWI300251B (en) * | 2006-07-14 | 2008-08-21 | Ind Tech Res Inst | Manufacturing method of vertical thin film transistor |
US7851786B2 (en) * | 2006-09-01 | 2010-12-14 | Alcatel-Lucent Usa Inc. | Programmable polyelectrolyte electrical switches |
JP5250981B2 (ja) * | 2007-02-21 | 2013-07-31 | セイコーエプソン株式会社 | 有機デバイスの製造方法並びに電子機器 |
US9520563B2 (en) * | 2007-11-21 | 2016-12-13 | The Board Of Trustees Of The Leland Stanford Junior University | Patterning of organic semiconductor materials |
US9184369B2 (en) | 2008-09-18 | 2015-11-10 | Fujifilm Sonosite, Inc. | Methods for manufacturing ultrasound transducers and other components |
EP3576137A1 (de) * | 2008-09-18 | 2019-12-04 | FUJIFILM SonoSite, Inc. | Ultraschallwandler |
US9173047B2 (en) | 2008-09-18 | 2015-10-27 | Fujifilm Sonosite, Inc. | Methods for manufacturing ultrasound transducers and other components |
US10441185B2 (en) * | 2009-12-16 | 2019-10-15 | The Board Of Trustees Of The University Of Illinois | Flexible and stretchable electronic systems for epidermal electronics |
CN102656421A (zh) * | 2009-12-23 | 2012-09-05 | Imra美国公司 | 利用结构化光学元件和聚焦光束的激光刻图 |
US9196509B2 (en) | 2010-02-16 | 2015-11-24 | Deca Technologies Inc | Semiconductor device and method of adaptive patterning for panelized packaging |
US8656333B1 (en) * | 2010-02-16 | 2014-02-18 | Deca Technologies, Inc. | Integrated circuit package auto-routing |
US8799845B2 (en) | 2010-02-16 | 2014-08-05 | Deca Technologies Inc. | Adaptive patterning for panelized packaging |
US20110266436A1 (en) * | 2010-04-29 | 2011-11-03 | Battelle Energy Alliance, Llc | Apparatuses and methods for forming electromagnetic fields |
US8502159B2 (en) * | 2010-04-29 | 2013-08-06 | Battelle Energy Alliance, Llc | Apparatuses and methods for generating electric fields |
RU2461151C1 (ru) * | 2011-01-25 | 2012-09-10 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) | Ионный диод для генерации нейтронов |
RU2479890C1 (ru) * | 2011-12-07 | 2013-04-20 | Открытое акционерное общество "Научно-исследовательский институт полупроводникового машиностроения" | Кассета для технологических спутников фотопреобразователей |
JP6105266B2 (ja) | 2011-12-15 | 2017-03-29 | 株式会社半導体エネルギー研究所 | 記憶装置 |
WO2013111757A1 (en) * | 2012-01-23 | 2013-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2013161878A (ja) * | 2012-02-02 | 2013-08-19 | Renesas Electronics Corp | 半導体装置、および半導体装置の製造方法 |
US8753904B2 (en) | 2012-06-07 | 2014-06-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for semiconductor device pattern loading effect characterization |
US9482518B2 (en) | 2012-06-07 | 2016-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Systems and methods for semiconductor device process determination using reflectivity measurement |
RU2504046C1 (ru) * | 2012-07-12 | 2014-01-10 | Открытое акционерное общество "Концерн радиостроения "Вега" | Способ получения межсоединений в высокоплотных электронных модулях |
CN103338596A (zh) * | 2013-06-18 | 2013-10-02 | 华南理工大学 | 一种不用光刻胶的全加成线路板制作方法 |
US9040316B1 (en) | 2014-06-12 | 2015-05-26 | Deca Technologies Inc. | Semiconductor device and method of adaptive patterning for panelized packaging with dynamic via clipping |
CN104282250B (zh) * | 2014-10-24 | 2016-08-31 | 深圳市华星光电技术有限公司 | Tft 中mis 结构设计的控制方法及系统 |
JP6504497B2 (ja) * | 2015-03-04 | 2019-04-24 | 株式会社アルバック | タッチパネルおよび透明導電性基板 |
CN105353590B (zh) * | 2015-12-11 | 2018-01-02 | 中国电子科技集团公司第四十一研究所 | 薄膜电路金属化孔内光刻胶的曝光方法及基片承载装置 |
US10157803B2 (en) | 2016-09-19 | 2018-12-18 | Deca Technologies Inc. | Semiconductor device and method of unit specific progressive alignment |
US10573601B2 (en) | 2016-09-19 | 2020-02-25 | Deca Technologies Inc. | Semiconductor device and method of unit specific progressive alignment |
US10482976B2 (en) * | 2017-06-29 | 2019-11-19 | SK Hynix Inc. | Memory device performing UV-assisted erase operation |
RU185725U1 (ru) * | 2018-07-02 | 2018-12-17 | федеральное государственное бюджетное научное учреждение "Научно-исследовательский институт перспективных материалов и технологий" | Микроволновое устройство для термообработки полимерных композиционных материалов |
RU2700231C1 (ru) * | 2018-10-24 | 2019-09-13 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" | Способ формирования трехмерных структур топологических элементов функциональных слоев на поверхности подложек |
US20220221600A1 (en) * | 2019-04-12 | 2022-07-14 | Queen Mary University Of London | Radiation detector |
CN116801532A (zh) * | 2021-05-14 | 2023-09-22 | Oppo广东移动通信有限公司 | 壳体、其制备方法、可穿戴设备及电子设备 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4507672A (en) * | 1980-03-14 | 1985-03-26 | The Johns Hopkins University | Method of fabricating a current controlled bistable electrical organic thin film switching device |
US4371883A (en) * | 1980-03-14 | 1983-02-01 | The Johns Hopkins University | Current controlled bistable electrical organic thin film switching device |
US5407851A (en) * | 1981-02-23 | 1995-04-18 | Unisys Corporation | Method of fabricating an electrically alterable resistive component on an insulating layer above a semiconductor substrate |
US4825408A (en) * | 1984-04-25 | 1989-04-25 | The Johns Hopkins University | Multistate optical switching and memory apparatus using an amphoteric organic charge transfer material |
IL86162A (en) * | 1988-04-25 | 1991-11-21 | Zvi Orbach | Customizable semiconductor devices |
US5427941A (en) | 1985-08-08 | 1995-06-27 | Schering Corporation | Actinomadura brunnea var. antibiotica strains |
KR900008647B1 (ko) * | 1986-03-20 | 1990-11-26 | 후지쓰 가부시끼가이샤 | 3차원 집적회로와 그의 제조방법 |
EP0263574A1 (de) * | 1986-09-08 | 1988-04-13 | THORN EMI North America Inc. | Methode zur Herstellung eines Halbleiterbauelementes und ein solches Bauelement mit zumindest einer selektiv aktivierbaren Leiterbahn |
US4806995A (en) * | 1987-02-02 | 1989-02-21 | Olin Corporation | Optical and electrical switching devices and a polymer composition containing pendant organic charge transfer salt moieties useful in switching devices |
EP0344346B1 (de) * | 1988-06-01 | 1995-04-26 | Texas Instruments Incorporated | Optische Schaltvorrichtung |
JPH07103190B2 (ja) * | 1989-02-15 | 1995-11-08 | 松下電器産業株式会社 | 有機導電性薄膜とその製造方法 |
US5043251A (en) | 1989-11-29 | 1991-08-27 | The United States Of America As Represented By The Secretary Of The Navy | Process of three dimensional lithography in amorphous polymers |
US5689428A (en) * | 1990-09-28 | 1997-11-18 | Texas Instruments Incorporated | Integrated circuits, transistors, data processing systems, printed wiring boards, digital computers, smart power devices, and processes of manufacture |
US5282312A (en) * | 1991-12-31 | 1994-02-01 | Tessera, Inc. | Multi-layer circuit construction methods with customization features |
US5378916A (en) * | 1993-02-17 | 1995-01-03 | Xerox Corporation | Color imaging charge-coupled array with multiple photosensitive regions |
US5427841A (en) | 1993-03-09 | 1995-06-27 | U.S. Philips Corporation | Laminated structure of a metal layer on a conductive polymer layer and method of manufacturing such a structure |
ATE171560T1 (de) | 1993-03-09 | 1998-10-15 | Koninkl Philips Electronics Nv | Herstellungsverfahren eines musters von einem elektrisch leitfähigen polymer auf einer substratoberfläche und metallisierung eines solchen musters |
US5567550A (en) | 1993-03-25 | 1996-10-22 | Texas Instruments Incorporated | Method of making a mask for making integrated circuits |
EP1178530A2 (de) * | 1993-09-30 | 2002-02-06 | Kopin Corporation | 3D Prozessor mit Transfer-Dünnschichtschaltungen |
US5572409A (en) * | 1994-02-08 | 1996-11-05 | Prolinx Labs Corporation | Apparatus including a programmable socket adapter for coupling an electronic component to a component socket on a printed circuit board |
US5537108A (en) * | 1994-02-08 | 1996-07-16 | Prolinx Labs Corporation | Method and structure for programming fuses |
US5808351A (en) * | 1994-02-08 | 1998-09-15 | Prolinx Labs Corporation | Programmable/reprogramable structure using fuses and antifuses |
JP3770631B2 (ja) * | 1994-10-24 | 2006-04-26 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US5703394A (en) * | 1996-06-10 | 1997-12-30 | Motorola | Integrated electro-optical package |
JP4509228B2 (ja) * | 1997-08-22 | 2010-07-21 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 有機材料から成る電界効果トランジスタ及びその製造方法 |
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