DE69938585D1 - Integrierte schaltungsanordnung - Google Patents

Integrierte schaltungsanordnung

Info

Publication number
DE69938585D1
DE69938585D1 DE69938585T DE69938585T DE69938585D1 DE 69938585 D1 DE69938585 D1 DE 69938585D1 DE 69938585 T DE69938585 T DE 69938585T DE 69938585 T DE69938585 T DE 69938585T DE 69938585 D1 DE69938585 D1 DE 69938585D1
Authority
DE
Germany
Prior art keywords
integrated circuit
circuit arrangement
arrangement
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69938585T
Other languages
English (en)
Other versions
DE69938585T2 (de
Inventor
Hendrik K Kloen
Lodewijk P Huiskamp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE69938585D1 publication Critical patent/DE69938585D1/de
Publication of DE69938585T2 publication Critical patent/DE69938585T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69938585T 1998-12-04 1999-11-22 Integrierte schaltungsanordnung Expired - Lifetime DE69938585T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP98204126 1998-12-04
EP98204126 1998-12-04
PCT/EP1999/009153 WO2000035013A1 (en) 1998-12-04 1999-11-22 An integrated circuit device

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Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7230340B2 (en) * 2000-10-18 2007-06-12 Megica Corporation Post passivation interconnection schemes on top of the IC chips
US7405149B1 (en) * 1998-12-21 2008-07-29 Megica Corporation Post passivation method for semiconductor chip or wafer
US8021976B2 (en) * 2002-10-15 2011-09-20 Megica Corporation Method of wire bonding over active area of a semiconductor circuit
US6965165B2 (en) 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
US7381642B2 (en) * 2004-09-23 2008-06-03 Megica Corporation Top layers of metal for integrated circuits
US6495442B1 (en) * 2000-10-18 2002-12-17 Magic Corporation Post passivation interconnection schemes on top of the IC chips
US6936531B2 (en) 1998-12-21 2005-08-30 Megic Corporation Process of fabricating a chip structure
JP3651765B2 (ja) * 2000-03-27 2005-05-25 株式会社東芝 半導体装置
JP4979154B2 (ja) * 2000-06-07 2012-07-18 ルネサスエレクトロニクス株式会社 半導体装置
US6972484B2 (en) * 2000-10-13 2005-12-06 Texas Instruments Incorporated Circuit structure integrating the power distribution functions of circuits and leadframes into the chip surface
JP2002198374A (ja) * 2000-10-16 2002-07-12 Sharp Corp 半導体装置およびその製造方法
US7372161B2 (en) * 2000-10-18 2008-05-13 Megica Corporation Post passivation interconnection schemes on top of the IC chips
US7271489B2 (en) 2003-10-15 2007-09-18 Megica Corporation Post passivation interconnection schemes on top of the IC chips
US6593649B1 (en) 2001-05-17 2003-07-15 Megic Corporation Methods of IC rerouting option for multiple package system applications
US7932603B2 (en) 2001-12-13 2011-04-26 Megica Corporation Chip structure and process for forming the same
DE10200932A1 (de) * 2002-01-12 2003-07-24 Philips Intellectual Property Diskretes Halbleiterbauelement
US6921979B2 (en) * 2002-03-13 2005-07-26 Freescale Semiconductor, Inc. Semiconductor device having a bond pad and method therefor
US6844631B2 (en) * 2002-03-13 2005-01-18 Freescale Semiconductor, Inc. Semiconductor device having a bond pad and method therefor
US7288845B2 (en) 2002-10-15 2007-10-30 Marvell Semiconductor, Inc. Fabrication of wire bond pads over underlying active devices, passive devices and/or dielectric layers in integrated circuits
JP4258205B2 (ja) * 2002-11-11 2009-04-30 パナソニック株式会社 半導体装置
JP4357862B2 (ja) * 2003-04-09 2009-11-04 シャープ株式会社 半導体装置
US7566964B2 (en) * 2003-04-10 2009-07-28 Agere Systems Inc. Aluminum pad power bus and signal routing for integrated circuit devices utilizing copper technology interconnect structures
US7319277B2 (en) * 2003-05-08 2008-01-15 Megica Corporation Chip structure with redistribution traces
US6927156B2 (en) * 2003-06-18 2005-08-09 Intel Corporation Apparatus and method extending flip-chip pad structures for wirebonding on low-k dielectric silicon
JP3678239B2 (ja) * 2003-06-30 2005-08-03 セイコーエプソン株式会社 半導体装置及びその製造方法、回路基板並びに電子機器
DE10333465B4 (de) * 2003-07-22 2008-07-24 Infineon Technologies Ag Elektronisches Bauteil mit Halbleiterchip, Verfahren zur Herstellung desselben sowie Verfahren zur Herstellung eines Halbleiterwafers mit Kontaktflecken
US7005369B2 (en) * 2003-08-21 2006-02-28 Intersil American Inc. Active area bonding compatible high current structures
US8274160B2 (en) 2003-08-21 2012-09-25 Intersil Americas Inc. Active area bonding compatible high current structures
DE10345470A1 (de) * 2003-09-30 2004-12-30 Infineon Technologies Ag Kontakt- und Schaltungsstruktur für Halbleiterwafer in der Chipfertigung
US7459790B2 (en) * 2003-10-15 2008-12-02 Megica Corporation Post passivation interconnection schemes on top of the IC chips
US7394161B2 (en) * 2003-12-08 2008-07-01 Megica Corporation Chip structure with pads having bumps or wirebonded wires formed thereover or used to be tested thereto
US20050151265A1 (en) 2004-01-14 2005-07-14 Nian Yang Efficient use of wafer area with device under the pad approach
US7629689B2 (en) * 2004-01-22 2009-12-08 Kawasaki Microelectronics, Inc. Semiconductor integrated circuit having connection pads over active elements
JP4696532B2 (ja) * 2004-05-20 2011-06-08 株式会社デンソー パワー複合集積型半導体装置およびその製造方法
US7425767B2 (en) * 2004-07-14 2008-09-16 Megica Corporation Chip structure with redistribution traces
TWI283443B (en) 2004-07-16 2007-07-01 Megica Corp Post-passivation process and process of forming a polymer layer on the chip
US7521805B2 (en) * 2004-10-12 2009-04-21 Megica Corp. Post passivation interconnection schemes on top of the IC chips
JP4674522B2 (ja) * 2004-11-11 2011-04-20 株式会社デンソー 半導体装置
TWI269420B (en) 2005-05-03 2006-12-21 Megica Corp Stacked chip package and process thereof
JP2007059867A (ja) * 2005-07-26 2007-03-08 Matsushita Electric Ind Co Ltd 半導体装置
US7947978B2 (en) * 2005-12-05 2011-05-24 Megica Corporation Semiconductor chip with bond area
US8344524B2 (en) * 2006-03-07 2013-01-01 Megica Corporation Wire bonding method for preventing polymer cracking
US8420520B2 (en) * 2006-05-18 2013-04-16 Megica Corporation Non-cyanide gold electroplating for fine-line gold traces and gold pads
US8421227B2 (en) * 2006-06-28 2013-04-16 Megica Corporation Semiconductor chip structure
US7960825B2 (en) * 2006-09-06 2011-06-14 Megica Corporation Chip package and method for fabricating the same
US8193636B2 (en) * 2007-03-13 2012-06-05 Megica Corporation Chip assembly with interconnection by metal bump
JP5192163B2 (ja) * 2007-03-23 2013-05-08 住友電工デバイス・イノベーション株式会社 半導体装置
US8030775B2 (en) 2007-08-27 2011-10-04 Megica Corporation Wirebond over post passivation thick metal
DE102007046556A1 (de) * 2007-09-28 2009-04-02 Infineon Technologies Austria Ag Halbleiterbauelement mit Kupfermetallisierungen
JP2010182911A (ja) * 2009-02-06 2010-08-19 Renesas Electronics Corp 半導体装置の製造方法及びワイヤボンダ
WO2010105853A1 (de) * 2009-03-20 2010-09-23 Microgan Gmbh Vertikal kontaktiertes elektronisches bauelement sowie verfahren zur herstellung eines solchen
DE102011107349B4 (de) * 2010-06-30 2016-05-12 Micronas Gmbh Bondkontaktstelle auf einem Halbleitersubstrat
US9064707B2 (en) 2011-09-14 2015-06-23 Micronas Gmbh Bonding contact area on a semiconductor substrate
CN103390647A (zh) * 2012-05-10 2013-11-13 无锡华润上华半导体有限公司 一种功率mos器件结构
US9272371B2 (en) 2013-05-30 2016-03-01 Agc Automotive Americas R&D, Inc. Solder joint for an electrical conductor and a window pane including same
DE202017100374U1 (de) 2017-01-25 2017-04-06 Suncolor Hardware Co., Ltd Einstellmechanismus für eine Türklinke
US10263362B2 (en) 2017-03-29 2019-04-16 Agc Automotive Americas R&D, Inc. Fluidically sealed enclosure for window electrical connections
US10849192B2 (en) 2017-04-26 2020-11-24 Agc Automotive Americas R&D, Inc. Enclosure assembly for window electrical connections
US11804527B2 (en) 2021-07-14 2023-10-31 Nxp Usa, Inc. Transistor with center fed gate

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5921034A (ja) * 1982-07-27 1984-02-02 Toshiba Corp 半導体装置
JPS6178151A (ja) * 1984-09-25 1986-04-21 Nec Corp 半導体装置
JPS62122255A (ja) * 1985-11-22 1987-06-03 Hitachi Ltd 化合物半導体装置
JPS63283040A (ja) * 1987-05-15 1988-11-18 Toshiba Corp 半導体装置
JPH077783B2 (ja) * 1988-03-18 1995-01-30 株式会社東芝 電気的接続部に銅もしくは銅合金製金属細線を配置する半導体装置
US5719448A (en) * 1989-03-07 1998-02-17 Seiko Epson Corporation Bonding pad structures for semiconductor integrated circuits
US5293073A (en) * 1989-06-27 1994-03-08 Kabushiki Kaisha Toshiba Electrode structure of a semiconductor device which uses a copper wire as a bonding wire
GB2243485A (en) * 1990-04-27 1991-10-30 Motorola Gmbh Semiconductor device contact pads
JP2550248B2 (ja) * 1991-10-14 1996-11-06 株式会社東芝 半導体集積回路装置およびその製造方法
KR100335591B1 (ko) 1992-09-10 2002-08-24 텍사스 인스트루먼츠 인코포레이티드 집적회로디바이스의액티브회로영역상의와이어본딩방법및집적회로디바이스
JP2944840B2 (ja) * 1993-03-12 1999-09-06 株式会社日立製作所 電力用半導体装置
EP0637840A1 (de) * 1993-08-05 1995-02-08 AT&T Corp. Integrierte Schaltung mit aktiven Elementen unter den Anschlussflächen
EP0646959B1 (de) * 1993-09-30 2001-08-16 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Verfahren zur Metallisierung und Verbindung bei der Herstellung von Leistungshalbleiterbauelementen
US5661082A (en) * 1995-01-20 1997-08-26 Motorola, Inc. Process for forming a semiconductor device having a bond pad
JPH10135270A (ja) * 1996-10-31 1998-05-22 Casio Comput Co Ltd 半導体装置及びその製造方法
JP3354424B2 (ja) * 1997-02-27 2002-12-09 三洋電機株式会社 半導体装置および半導体装置の製造方法
JP3068534B2 (ja) * 1997-10-14 2000-07-24 九州日本電気株式会社 半導体装置

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WO2000035013A1 (en) 2000-06-15
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EP1051750B1 (de) 2008-04-23
EP1051750A1 (de) 2000-11-15
DE69938585T2 (de) 2008-08-14
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TW445616B (en) 2001-07-11
US6229221B1 (en) 2001-05-08

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