DE69940473D1 - Leseverfahren für nichtflüchtige Speicheranordnung mit automatischer Erkennung eines Burstlesebetriebs sowie entsprechende Leseschaltung - Google Patents
Leseverfahren für nichtflüchtige Speicheranordnung mit automatischer Erkennung eines Burstlesebetriebs sowie entsprechende LeseschaltungInfo
- Publication number
- DE69940473D1 DE69940473D1 DE69940473T DE69940473T DE69940473D1 DE 69940473 D1 DE69940473 D1 DE 69940473D1 DE 69940473 T DE69940473 T DE 69940473T DE 69940473 T DE69940473 T DE 69940473T DE 69940473 D1 DE69940473 D1 DE 69940473D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- nonvolatile memory
- automatic detection
- reading method
- read operation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/103—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers
- G11C7/1033—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers using data registers of which only one stage is addressed for sequentially outputting data from a predetermined number of stages, e.g. nibble read-write mode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1045—Read-write mode select circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP99830722A EP1103977B1 (de) | 1999-11-25 | 1999-11-25 | Leseverfahren für nichtflüchtige Speicheranordnung mit automatischer Erkennung eines Burstlesebetriebs sowie entsprechende Leseschaltung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE69940473D1 true DE69940473D1 (de) | 2009-04-09 |
Family
ID=8243678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69940473T Expired - Lifetime DE69940473D1 (de) | 1999-11-25 | 1999-11-25 | Leseverfahren für nichtflüchtige Speicheranordnung mit automatischer Erkennung eines Burstlesebetriebs sowie entsprechende Leseschaltung |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6349059B1 (de) |
| EP (1) | EP1103977B1 (de) |
| DE (1) | DE69940473D1 (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10128903C2 (de) * | 2001-06-15 | 2003-04-24 | Infineon Technologies Ag | Schaltungsanordnung zur Speicherung digitaler Daten |
| US7174543B2 (en) * | 2001-08-29 | 2007-02-06 | Analog Devices, Inc. | High-speed program tracing |
| KR100505109B1 (ko) * | 2003-03-26 | 2005-07-29 | 삼성전자주식회사 | 읽기 시간을 단축시킬 수 있는 플래시 메모리 장치 |
| KR100780949B1 (ko) * | 2006-03-21 | 2007-12-03 | 삼성전자주식회사 | 데이터 독출 모드에서 ｏｄｔ 회로의 온/오프 상태를테스트할 수 있는 반도체 메모리 장치 및 ｏｄｔ 회로의상태 테스트 방법 |
| US7414891B2 (en) | 2007-01-04 | 2008-08-19 | Atmel Corporation | Erase verify method for NAND-type flash memories |
| US20080232169A1 (en) * | 2007-03-20 | 2008-09-25 | Atmel Corporation | Nand-like memory array employing high-density nor-like memory devices |
| KR20100100437A (ko) * | 2009-03-06 | 2010-09-15 | 삼성전자주식회사 | 비휘발성 메모리 장치의 데이터 독출 방법 및 이를 포함하는 데이터 입출력 방법 |
| TWI438778B (zh) | 2010-03-25 | 2014-05-21 | Silicon Motion Inc | 用來抑制資料錯誤之方法以及相關之記憶裝置及其控制器 |
| US10698610B2 (en) | 2018-02-23 | 2020-06-30 | Western Digital Technologies, Inc. | Storage system and method for performing high-speed read and write operations |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5696917A (en) * | 1994-06-03 | 1997-12-09 | Intel Corporation | Method and apparatus for performing burst read operations in an asynchronous nonvolatile memory |
| US5966724A (en) * | 1996-01-11 | 1999-10-12 | Micron Technology, Inc. | Synchronous memory device with dual page and burst mode operations |
| US5784705A (en) * | 1996-07-15 | 1998-07-21 | Mosys, Incorporated | Method and structure for performing pipeline burst accesses in a semiconductor memory |
| KR100274591B1 (ko) * | 1997-07-29 | 2001-01-15 | 윤종용 | 동기형 버스트 매스크 롬 및 그것의 데이터 독출 방법 |
-
1999
- 1999-11-25 EP EP99830722A patent/EP1103977B1/de not_active Expired - Lifetime
- 1999-11-25 DE DE69940473T patent/DE69940473D1/de not_active Expired - Lifetime
-
2000
- 2000-11-20 US US09/716,746 patent/US6349059B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6349059B1 (en) | 2002-02-19 |
| EP1103977A1 (de) | 2001-05-30 |
| EP1103977B1 (de) | 2009-02-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |