DE69940640D1 - Er diffusionsbarriereschicht aus rutheniumsilizid - Google Patents
Er diffusionsbarriereschicht aus rutheniumsilizidInfo
- Publication number
- DE69940640D1 DE69940640D1 DE69940640T DE69940640T DE69940640D1 DE 69940640 D1 DE69940640 D1 DE 69940640D1 DE 69940640 T DE69940640 T DE 69940640T DE 69940640 T DE69940640 T DE 69940640T DE 69940640 D1 DE69940640 D1 DE 69940640D1
- Authority
- DE
- Germany
- Prior art keywords
- barrier layer
- diffusion barrier
- rusix
- layer
- ruthenium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000004888 barrier function Effects 0.000 title abstract 6
- 238000009792 diffusion process Methods 0.000 title abstract 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052707 ruthenium Inorganic materials 0.000 title abstract 3
- 229910021332 silicide Inorganic materials 0.000 title 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000003990 capacitor Substances 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/141,240 US6197628B1 (en) | 1998-08-27 | 1998-08-27 | Ruthenium silicide diffusion barrier layers and methods of forming same |
PCT/US1999/018114 WO2000013215A1 (en) | 1998-08-27 | 1999-08-10 | Ruthenium silicide diffusion barrier layers and methods of forming same |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69940640D1 true DE69940640D1 (de) | 2009-05-07 |
Family
ID=22494815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69940640T Expired - Lifetime DE69940640D1 (de) | 1998-08-27 | 1999-08-10 | Er diffusionsbarriereschicht aus rutheniumsilizid |
Country Status (10)
Country | Link |
---|---|
US (3) | US6197628B1 (de) |
EP (1) | EP1114449B1 (de) |
JP (1) | JP4719358B2 (de) |
KR (2) | KR20050048625A (de) |
AT (1) | ATE426915T1 (de) |
AU (1) | AU5346799A (de) |
DE (1) | DE69940640D1 (de) |
MY (1) | MY132400A (de) |
TW (1) | TW436957B (de) |
WO (1) | WO2000013215A1 (de) |
Families Citing this family (50)
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US6787833B1 (en) * | 2000-08-31 | 2004-09-07 | Micron Technology, Inc. | Integrated circuit having a barrier structure |
-
1998
- 1998-08-27 US US09/141,240 patent/US6197628B1/en not_active Expired - Lifetime
-
1999
- 1999-08-10 KR KR1020057003945A patent/KR20050048625A/ko active Search and Examination
- 1999-08-10 AU AU53467/99A patent/AU5346799A/en not_active Abandoned
- 1999-08-10 JP JP2000568108A patent/JP4719358B2/ja not_active Expired - Lifetime
- 1999-08-10 EP EP99939124A patent/EP1114449B1/de not_active Expired - Lifetime
- 1999-08-10 DE DE69940640T patent/DE69940640D1/de not_active Expired - Lifetime
- 1999-08-10 WO PCT/US1999/018114 patent/WO2000013215A1/en not_active Application Discontinuation
- 1999-08-10 KR KR1020017002545A patent/KR20010073044A/ko active Search and Examination
- 1999-08-10 AT AT99939124T patent/ATE426915T1/de not_active IP Right Cessation
- 1999-08-25 MY MYPI99003629A patent/MY132400A/en unknown
- 1999-08-27 TW TW088114745A patent/TW436957B/zh not_active IP Right Cessation
-
2000
- 2000-06-23 US US09/603,132 patent/US7560815B1/en not_active Expired - Fee Related
-
2009
- 2009-07-13 US US12/501,955 patent/US8461682B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8461682B2 (en) | 2013-06-11 |
US7560815B1 (en) | 2009-07-14 |
KR20050048625A (ko) | 2005-05-24 |
JP2002524847A (ja) | 2002-08-06 |
TW436957B (en) | 2001-05-28 |
ATE426915T1 (de) | 2009-04-15 |
US20090278232A1 (en) | 2009-11-12 |
KR20010073044A (ko) | 2001-07-31 |
WO2000013215A1 (en) | 2000-03-09 |
AU5346799A (en) | 2000-03-21 |
EP1114449B1 (de) | 2009-03-25 |
EP1114449A1 (de) | 2001-07-11 |
US6197628B1 (en) | 2001-03-06 |
JP4719358B2 (ja) | 2011-07-06 |
MY132400A (en) | 2007-10-31 |
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