DE69941616D1 - Solarzelle - Google Patents

Solarzelle

Info

Publication number
DE69941616D1
DE69941616D1 DE69941616T DE69941616T DE69941616D1 DE 69941616 D1 DE69941616 D1 DE 69941616D1 DE 69941616 T DE69941616 T DE 69941616T DE 69941616 T DE69941616 T DE 69941616T DE 69941616 D1 DE69941616 D1 DE 69941616D1
Authority
DE
Germany
Prior art keywords
solar cell
solar
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69941616T
Other languages
English (en)
Inventor
Atsushi Inaba
Yamato Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honda Motor Co Ltd
Original Assignee
Honda Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honda Motor Co Ltd filed Critical Honda Motor Co Ltd
Application granted granted Critical
Publication of DE69941616D1 publication Critical patent/DE69941616D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
DE69941616T 1998-09-07 1999-06-11 Solarzelle Expired - Lifetime DE69941616D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10268964A JP2000091603A (ja) 1998-09-07 1998-09-07 太陽電池

Publications (1)

Publication Number Publication Date
DE69941616D1 true DE69941616D1 (de) 2009-12-17

Family

ID=17465756

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69941616T Expired - Lifetime DE69941616D1 (de) 1998-09-07 1999-06-11 Solarzelle

Country Status (4)

Country Link
US (1) US6020556A (de)
EP (1) EP0987768B1 (de)
JP (1) JP2000091603A (de)
DE (1) DE69941616D1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091601A (ja) * 1998-09-07 2000-03-31 Honda Motor Co Ltd 太陽電池
FR2820241B1 (fr) 2001-01-31 2003-09-19 Saint Gobain Substrat transparent muni d'une electrode
EP1691421A1 (de) * 2005-02-10 2006-08-16 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO Verfahren zur Herstellung eines Metallüberzugs auf einem Substrat
JP2009505426A (ja) * 2005-08-15 2009-02-05 コナルカ テクノロジーズ インコーポレイテッド 外部回路への相互接続を有する光起電力電池
JP4947051B2 (ja) * 2007-02-26 2012-06-06 株式会社村田製作所 導電膜および導電膜の製造方法
JP5501225B2 (ja) * 2007-05-24 2014-05-21 インターナショナル・ビジネス・マシーンズ・コーポレーション 薄層型光電池の背面コンタクト形成方法
US8481357B2 (en) * 2008-03-08 2013-07-09 Crystal Solar Incorporated Thin film solar cell with ceramic handling layer
US8110738B2 (en) 2009-02-20 2012-02-07 Miasole Protective layer for large-scale production of thin-film solar cells
US8115095B2 (en) * 2009-02-20 2012-02-14 Miasole Protective layer for large-scale production of thin-film solar cells
US8134069B2 (en) * 2009-04-13 2012-03-13 Miasole Method and apparatus for controllable sodium delivery for thin film photovoltaic materials
US7897020B2 (en) * 2009-04-13 2011-03-01 Miasole Method for alkali doping of thin film photovoltaic materials
US7785921B1 (en) 2009-04-13 2010-08-31 Miasole Barrier for doped molybdenum targets
US9284639B2 (en) * 2009-07-30 2016-03-15 Apollo Precision Kunming Yuanhong Limited Method for alkali doping of thin film photovoltaic materials
US20110067998A1 (en) * 2009-09-20 2011-03-24 Miasole Method of making an electrically conductive cadmium sulfide sputtering target for photovoltaic manufacturing
US8709335B1 (en) 2009-10-20 2014-04-29 Hanergy Holding Group Ltd. Method of making a CIG target by cold spraying
US8709548B1 (en) 2009-10-20 2014-04-29 Hanergy Holding Group Ltd. Method of making a CIG target by spray forming
US20110162696A1 (en) * 2010-01-05 2011-07-07 Miasole Photovoltaic materials with controllable zinc and sodium content and method of making thereof
TWI514608B (zh) * 2010-01-14 2015-12-21 Dow Global Technologies Llc 具曝露式導電柵格之防溼光伏打裝置
JP2011159937A (ja) * 2010-02-04 2011-08-18 Mitsubishi Chemicals Corp 有機太陽電池セル及び太陽電池モジュール
JP2011159934A (ja) * 2010-02-04 2011-08-18 Mitsubishi Chemicals Corp 有機太陽電池セル、太陽電池モジュール及び有機太陽電池セルの製造方法
EP2534693A2 (de) * 2010-02-09 2012-12-19 Dow Global Technologies LLC Feuchtigkeitsbeständige pv-module mit verbesserter sperrschichthaftung
US8048707B1 (en) 2010-10-19 2011-11-01 Miasole Sulfur salt containing CIG targets, methods of making and methods of use thereof
US7935558B1 (en) 2010-10-19 2011-05-03 Miasole Sodium salt containing CIG targets, methods of making and methods of use thereof
US9169548B1 (en) 2010-10-19 2015-10-27 Apollo Precision Fujian Limited Photovoltaic cell with copper poor CIGS absorber layer and method of making thereof
JP2012146804A (ja) * 2011-01-12 2012-08-02 Honda Motor Co Ltd 太陽電池及びその製造方法
EP2771915A2 (de) * 2011-10-28 2014-09-03 Dow Global Technologies LLC Verfahren zur herstellung von pv-zellen von chalogenidbasis
US10043921B1 (en) 2011-12-21 2018-08-07 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof
CN112018198A (zh) * 2019-05-31 2020-12-01 东泰高科装备科技有限公司 一种太阳能电池衬底结构及其太阳能电池和制备方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3988167A (en) * 1975-03-07 1976-10-26 Rca Corporation Solar cell device having improved efficiency
JPS59115576A (ja) * 1982-12-22 1984-07-04 Sharp Corp 太陽電池の配線方法
JPS6035554A (ja) * 1984-06-26 1985-02-23 Sharp Corp 薄膜太陽電池
US4611091A (en) * 1984-12-06 1986-09-09 Atlantic Richfield Company CuInSe2 thin film solar cell with thin CdS and transparent window layer
US4647711A (en) * 1985-01-29 1987-03-03 The Standard Oil Company Stable front contact current collector for photovoltaic devices and method of making same
US4612411A (en) * 1985-06-04 1986-09-16 Atlantic Richfield Company Thin film solar cell with ZnO window layer
JPS63119587A (ja) * 1986-11-07 1988-05-24 Mitsubishi Electric Corp 集積型アモルフアスシリコン太陽電池
US4773945A (en) * 1987-09-14 1988-09-27 Ga Technologies, Inc. Solar cell with low infra-red absorption and method of manufacture
JPH0216776A (ja) * 1988-07-04 1990-01-19 Fuji Electric Co Ltd 太陽電池の製造方法
US4915745A (en) * 1988-09-22 1990-04-10 Atlantic Richfield Company Thin film solar cell and method of making
US4971633A (en) * 1989-09-26 1990-11-20 The United States Of America As Represented By The Department Of Energy Photovoltaic cell assembly
JPH04223378A (ja) * 1990-12-25 1992-08-13 Sharp Corp 太陽電池
US5176758A (en) * 1991-05-20 1993-01-05 United Solar Systems Corporation Translucent photovoltaic sheet material and panels
JP2645953B2 (ja) * 1992-01-16 1997-08-25 三洋電機株式会社 太陽電池の製造方法
JP2831200B2 (ja) * 1992-07-07 1998-12-02 株式会社富士電機総合研究所 薄膜太陽電池の製造方法
JPH0671092B2 (ja) * 1992-07-15 1994-09-07 株式会社半導体エネルギー研究所 薄膜太陽電池
JP2939075B2 (ja) * 1992-12-24 1999-08-25 キヤノン株式会社 太陽電池モジュール
JPH06268241A (ja) * 1993-03-15 1994-09-22 Fuji Electric Co Ltd 薄膜太陽電池およびその製造方法
US5356839A (en) * 1993-04-12 1994-10-18 Midwest Research Institute Enhanced quality thin film Cu(In,Ga)Se2 for semiconductor device applications by vapor-phase recrystallization
DE4333407C1 (de) * 1993-09-30 1994-11-17 Siemens Ag Solarzelle mit einer Chalkopyritabsorberschicht
US5668050A (en) * 1994-04-28 1997-09-16 Canon Kabushiki Kaisha Solar cell manufacturing method
JP3239657B2 (ja) * 1994-12-28 2001-12-17 富士電機株式会社 薄膜太陽電池およびその製造方法
US5730852A (en) * 1995-09-25 1998-03-24 Davis, Joseph & Negley Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells

Also Published As

Publication number Publication date
EP0987768A1 (de) 2000-03-22
JP2000091603A (ja) 2000-03-31
EP0987768B1 (de) 2009-11-04
US6020556A (en) 2000-02-01

Similar Documents

Publication Publication Date Title
DE19980447D2 (de) Solarzellenanordnung
DE69940291D1 (de) Weltraumsolarzelle
DE10066271B8 (de) Solarzelle
DE69941616D1 (de) Solarzelle
DE69907918D1 (de) Solarzellen-BAUELEMENT
DE60143221D1 (de) Solarzelle
DE69808356D1 (de) Solarzellenmodul
DE59812387D1 (de) Photovoltaische zelle
DE69833862D1 (de) Solarzellenmodul
DE69731799D1 (de) Solarzellenmodul
DE60122951D1 (de) Solarzellenpaneel
GB9819260D0 (en) Solar cell arrangements
DE69841343D1 (de) Festelektrolytzelle
DE59913423D1 (de) Speicherzellenanordnung
DE69920608D1 (de) Solarzellenbatterie
ATE385153T1 (de) Intelligente zellwiederherstellung
ATA195598A (de) Brennstoffzellenanordnung
DE29907797U1 (de) Solar-Vordach
DE9421390U1 (de) Solarzellenstruktur
GB9919227D0 (en) Solar cell
ATA195298A (de) Brennstoffzellenanordnung
DE29805791U1 (de) Indach-Solarkollektorsystem
DE19982903T1 (de) Produktionszelle
ATA168798A (de) Brennstoffzellenanordnung
DE29820899U1 (de) Sonnenkollektor

Legal Events

Date Code Title Description
8364 No opposition during term of opposition