EP0240433A2 - Single bonding shelf, multi-row, wire-bond finger layout for integrated circuit package - Google Patents

Single bonding shelf, multi-row, wire-bond finger layout for integrated circuit package Download PDF

Info

Publication number
EP0240433A2
EP0240433A2 EP87400729A EP87400729A EP0240433A2 EP 0240433 A2 EP0240433 A2 EP 0240433A2 EP 87400729 A EP87400729 A EP 87400729A EP 87400729 A EP87400729 A EP 87400729A EP 0240433 A2 EP0240433 A2 EP 0240433A2
Authority
EP
European Patent Office
Prior art keywords
bonding
package
pads
conductive
conductive path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP87400729A
Other languages
German (de)
French (fr)
Other versions
EP0240433A3 (en
Inventor
Ching-An Wu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Publication of EP0240433A2 publication Critical patent/EP0240433A2/en
Publication of EP0240433A3 publication Critical patent/EP0240433A3/en
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822Multilayer substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/5442Marks applied to semiconductor devices or parts comprising non digital, non alphanumeric information, e.g. symbols
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54426Marks applied to semiconductor devices or parts for alignment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54473Marks applied to semiconductor devices or parts for use after dicing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29144Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/325Material
    • H01L2224/32505Material outside the bonding interface, e.g. in the bulk of the layer connector
    • H01L2224/32506Material outside the bonding interface, e.g. in the bulk of the layer connector comprising an eutectic alloy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494Connecting portions
    • H01L2224/4943Connecting portions the connecting portions being staggered
    • H01L2224/49433Connecting portions the connecting portions being staggered outside the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/83801Soldering or alloying
    • H01L2224/83805Soldering or alloying involving forming a eutectic alloy at the bonding interface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01027Cobalt [Co]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/15165Monolayer substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1532Connection portion the connection portion being formed on the die mounting surface of the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Definitions

  • the present invention relates to integrated circuit packaging, and, more particularly, to an integrated circuit package with a novel wire-bond finger layout.
  • VLSI very large scale integrated circuits
  • Sophisticated packaging is required to provide electrical interfacing with and protection for these devices.
  • the demands on the integrated circuit package are increased as the required number of input/output and power connections reaches into the hundreds.
  • the multilayer ceramic pin-grid array is recognized as a most suitable technology for ultradense pin layouts.
  • Conductive paths are formed by screen printing metallization patterns on unfired alumina tape or "green sheets”.
  • Interlayer connections are made through via holes which are punched out and filled with a paste of conductive material such as aluminum or tungsten.
  • the green sheets are laminated and co-fired to form a monolithic package with complete electrical paths or "fingers" between pin locations and bonding pads located on a ceramic bonding shelf.
  • a package so constructed generally includes a central cavity in which an integrated circuit silicon die can be attached using a gold-silicon eutectic, other hard or soft solder, a silver glass paste or other bonding material.
  • the die is electrically interfaced to the package using bonding wires which extend between bonding pads on the die to respective bonding pads on the bonding shelf.
  • bonding wires which extend between bonding pads on the die to respective bonding pads on the bonding shelf.
  • an increased pin count can be accommodated by decreasing the pitch of the package bonding pads.
  • every production technology imposes some minimum practical pitch. For example, a production technology may not permit bonding pads smaller than 5 mils square. Smaller pads may exceed the precision of available automated wire bonding equipment, or impair the reliability of the conductive nature of the bonding pad itself.
  • Partial solutions to this problem include radially spreading or fanning the wire bonds so that the bonding pads of the package are on a greater pitch than the bonding pads on the die. This can yield an about 20% practical improvement in pin count. Further increases involve using longer bonding wires that is practical or desirable. Also, the fan arrangement requires each wire to be bonded at a different angle.
  • Another approach uses multiple rows of package bonding pads, each on a separate bonding shelf located on a separate tier level.
  • Each tier level is defined by an area of ceramic layer protruding beyond an adjacent layer.
  • multiple bonding shelves can be formed.
  • two bonding shelves can each be used to define a square row of package bonding pads at the minimum practical pitch, thus, doubling the pin count that can be accommodated with a single bonding shelf.
  • the rows are staggered to optimize the spacing of the wires from adjacent die bonding pads.
  • the two bonding shelf approach has disadvantages.
  • One problem is in the coregistration of the multiple rows of bonding pads. If the staggering is inexact, the likelihood of the bare bonding wires contacting and shorting is greatly increased. There are several contributors to such misalignment.
  • the major source of misalignment is uneven shrinkage during the co-firing of the ceramic package, which can involve heat exposure at l500°C for about 48 hours. Shrinkage can amount to l7%-23% of the area of any given layer, and adjacent layers can shrink in different directions. Furthermore, any problem with shrinkage misalignment is exacerbated when intermediate layers are involved. In addition to misalignment due to shrinkage, the screen printing process introduces alignment errors at each layer.
  • a package for an integrated circuit includes plural rows of bonding pads on a single bonding shelf defined on a single package layer. These rows include an inner and an outer row, defined by their relative proximity to a central cavity where an integrated circuit die is to be positioned. Conductive vias extend from pads of the inner row to a second layer of the package. This permits fingers to the inner row of pads to traverse the package without interference with the fingers to the outer row of pads.
  • the via connects with a conductive segment formed on the second layer.
  • This first segment extends to a second via which directly contacts the respective pin.
  • the outer pads are connected to respective pin vias by conductive segments formed on the bonding-shelf layer of the package.
  • Fingers extend from the inner pads down first vias to first conductive segments on a second layer, up second vias to second segments on the bonding-shelf layer, and from there to third vias which connect to the respective pins. Fingers from the outer pads extend along short segments on the bonding-shelf layer, along vias to a third layer, and along conductive segments on this third layer to the vias to the pins. Many other arrangements are made possible by the present invention.
  • the present invention provides the advantages of the multiple bonding shelf approach in that multiple staggered rows permit the effective pitch of the bonding pads to be multiplied by a factor of two or more. However, since all bonding pads are on a single bonding shelf, the problems with misalignment are essentially eliminated. This makes for an economical ultra-high density package with improved reliability.
  • An integrated circuit assembly l0 includes an integrated circuit die l2 and a multilayer circuit package l4, as shown in FIGS. l, 2 and 3.
  • Die l2 is a very large scale integrated (VLSI) circuit.
  • Package l4 provides protection and electrical interfacing for the die l2, which is situated in a cavity l6 of the package l4.
  • a single bonding shelf l8 of package l4 includes an inner row 20 and an outer row 22 of bonding pads.
  • the minimum practical width of the pads is greater than the spacing between pads.
  • conductive vias 24 provide for electrical connection of bonding pads 26 of inner row 20 to permit routing below bonding pads 28 of outer row 22.
  • bonding pad rows 20 and 22 are staggered to allow maximal and uniform spacing of the bonding wires 30 and 32.
  • Bonding wires 30 extend from every other die bonding pad 34 to the opposing package bonding pads 26 of inner row 20.
  • Bonding wires 32 extend from the alternate die bonding pads 34 to the respective package bonding pads 28 of outer row 22.
  • package l4 is constituted of several layers, including layers 43 and 44, of insulating ceramic material.
  • Package l4 also includes a large number of conductive pins, including pins 6l-65, which provide for physical attachment and electrical interfacing to an incorporating system.
  • Metallized strips or "fingers" include bonding pads 26 and 28 of FIG. l and serve as conductive paths to the pins.
  • the finger to pin 6l includes an inner bonding pad 26, a via 24, a conductive segment 36 along layer 43, and a via 7l.
  • the finger to pin 62 includes an outer bonding pad 28, a conductive segment 38 along layer 44, and a via 72. Fingers (not illustrated) to the other pins follow this alternating pattern.
  • Integrated circuit assembly ll0 illustrated in Fig. 4, is virtually identical to the embodiment described above except with respect to the conductive paths between the package bonding pads and the pins.
  • the conductive finger to pin l62 includes an inner bonding pad l26, via l24, conductive segment 36l along layer l43, via 362 between layers l43 and l44, conductive segment 363 along layer l44 and via l72.
  • the conductive finger to pin l6l includes an outer bonding pad l28, conductive segment 38l along layer l44, via 382 between layer l44 and l46, conductive segment 383 along layer l46, and via l7l.
  • the metallization patterns of assembly ll0 reflect the dedication of layer l43 as a ground plane so that only an inner portion is practically available for use by input or output signal fingers.
  • Layers l43, l45 and l47 are ground planes which can be used to shield the signals carried by layers l44 and l46. Thus, each signal carrying layer l44, l46 is shielded above and below by a shielding layer.
  • FIGS. 3 and 4 For purposes of completeness, the embodiments illustrated in FIGS. 3 and 4 are shown with heat spreaders 80 and l80, while FIGS. l and 2 illustrated an embodiment without such a heat spreader, but with the die attached to a ceramic layer of the package. This is done for heat dissipation purposes and forms no part of the present invention.
  • the illustrated embodiment includes 260 pins arranged on a 0.l00 ⁇ pitch in a l9 ⁇ l9 array with an opening in the center for the die and a hermetic seal.
  • the external package size is about l.96 ⁇ square.
  • the ten ceramic layers constitute a total thickness of about 0.l ⁇ .
  • the cavity is about 0.5l ⁇ square to accommodate the die which is about 0.4l ⁇ square.

Abstract

An integrated circuit assembly (l0) includes a bipolar VSLI die (l2) contained in a multilayer ceramic pin-grid array package (l4). A bonding shelf (l8) defined on a single ceramic layer contains an inner row (20) of bonding pads (26) and an outer row (22) of bonding pads (28). Bonding wires (30, 32) extend from bonding pads (34) on the die to the opposing pads on the inner and outer rows to provide an electrical interface between the die and the package. The inner and outer bonding pads are connected by metallized fingers to conductive pins (6l, 65) which provide a power and signal interface with an incorporating system.
The inner pads include metallized vias (24) to metallized segments on a layer other than that on which the bonding shelf is defined. Thus, the metallized fingers including the inner row of pads can extend to the pins while passing above or below, rather than between, adjacent pads of the outer row. In this way, the pitch of the package bonding pads is effectively doubled without the misalignment, and resulting problems with shorted bonding wires, inherent when the rows are located on separated bonding shelves.

Description

    BACKGROUND OF THE INVENTION
  • The present invention relates to integrated circuit packaging, and, more particularly, to an integrated circuit package with a novel wire-bond finger layout.
  • Most very large scale integrated (VLSI) circuits are fabricated on small silicon or other crystalline substrates. Sophisticated packaging is required to provide electrical interfacing with and protection for these devices. The demands on the integrated circuit package are increased as the required number of input/output and power connections reaches into the hundreds.
  • The multilayer ceramic pin-grid array (PGA) is recognized as a most suitable technology for ultradense pin layouts. Conductive paths are formed by screen printing metallization patterns on unfired alumina tape or "green sheets". Interlayer connections are made through via holes which are punched out and filled with a paste of conductive material such as aluminum or tungsten. The green sheets are laminated and co-fired to form a monolithic package with complete electrical paths or "fingers" between pin locations and bonding pads located on a ceramic bonding shelf.
  • A package so constructed generally includes a central cavity in which an integrated circuit silicon die can be attached using a gold-silicon eutectic, other hard or soft solder, a silver glass paste or other bonding material. The die is electrically interfaced to the package using bonding wires which extend between bonding pads on the die to respective bonding pads on the bonding shelf. Typically, it is convenient to arrange both the die bonding pads and the package bonding pads in square rows so that the bonding wires can be positioned straight across the gap between the die and the shelf.
  • To a point, an increased pin count can be accommodated by decreasing the pitch of the package bonding pads. However, every production technology imposes some minimum practical pitch. For example, a production technology may not permit bonding pads smaller than 5 mils square. Smaller pads may exceed the precision of available automated wire bonding equipment, or impair the reliability of the conductive nature of the bonding pad itself.
  • Partial solutions to this problem include radially spreading or fanning the wire bonds so that the bonding pads of the package are on a greater pitch than the bonding pads on the die. This can yield an about 20% practical improvement in pin count. Further increases involve using longer bonding wires that is practical or desirable. Also, the fan arrangement requires each wire to be bonded at a different angle.
  • Another approach uses multiple rows of package bonding pads, each on a separate bonding shelf located on a separate tier level. Each tier level is defined by an area of ceramic layer protruding beyond an adjacent layer. By stair-stepping the ceramic layers multiple bonding shelves can be formed. For example, two bonding shelves can each be used to define a square row of package bonding pads at the minimum practical pitch, thus, doubling the pin count that can be accommodated with a single bonding shelf. Typically, the rows are staggered to optimize the spacing of the wires from adjacent die bonding pads.
  • The two bonding shelf approach has disadvantages. One problem is in the coregistration of the multiple rows of bonding pads. If the staggering is inexact, the likelihood of the bare bonding wires contacting and shorting is greatly increased. There are several contributors to such misalignment.
  • The major source of misalignment is uneven shrinkage during the co-firing of the ceramic package, which can involve heat exposure at l500°C for about 48 hours. Shrinkage can amount to l7%-23% of the area of any given layer, and adjacent layers can shrink in different directions. Furthermore, any problem with shrinkage misalignment is exacerbated when intermediate layers are involved. In addition to misalignment due to shrinkage, the screen printing process introduces alignment errors at each layer.
  • What is needed, then, is a practical and economical approach to increasing the pin count that can be accommodated by a packaging scheme without the problems due to layer misalignment.
  • SUMMARY OF THE INVENTION
  • In accordance with the present invention, a package for an integrated circuit includes plural rows of bonding pads on a single bonding shelf defined on a single package layer. These rows include an inner and an outer row, defined by their relative proximity to a central cavity where an integrated circuit die is to be positioned. Conductive vias extend from pads of the inner row to a second layer of the package. This permits fingers to the inner row of pads to traverse the package without interference with the fingers to the outer row of pads.
  • In a preferred embodiment of the present invention, the via connects with a conductive segment formed on the second layer. This first segment extends to a second via which directly contacts the respective pin. The outer pads are connected to respective pin vias by conductive segments formed on the bonding-shelf layer of the package.
  • In another embodiment, design restrictions require a more complex finger routing. Fingers extend from the inner pads down first vias to first conductive segments on a second layer, up second vias to second segments on the bonding-shelf layer, and from there to third vias which connect to the respective pins. Fingers from the outer pads extend along short segments on the bonding-shelf layer, along vias to a third layer, and along conductive segments on this third layer to the vias to the pins. Many other arrangements are made possible by the present invention.
  • The present invention provides the advantages of the multiple bonding shelf approach in that multiple staggered rows permit the effective pitch of the bonding pads to be multiplied by a factor of two or more. However, since all bonding pads are on a single bonding shelf, the problems with misalignment are essentially eliminated. This makes for an economical ultra-high density package with improved reliability.
  • BRIEF DESCRIPTION OF THE DRAWINGS
    • FIGURE l is a planar view of an integrated circuit assembly in accordance with the present invention.
    • FIGURE 2 is a sectional view taken along line 2-2 of FIG. l.
    • FIGURE 3 is a sectional view of a portion of an integrated circuit assembly in accordance with the present invention.
    • FIGURE 4 is a sectional view of a portion of another integrated circuit assembly in accordance with the present invention.
    DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • An integrated circuit assembly l0 includes an integrated circuit die l2 and a multilayer circuit package l4, as shown in FIGS. l, 2 and 3. Die l2 is a very large scale integrated (VLSI) circuit. Package l4 provides protection and electrical interfacing for the die l2, which is situated in a cavity l6 of the package l4.
  • To provide a very large number of interconnections between die l2 and package l4, a single bonding shelf l8 of package l4 includes an inner row 20 and an outer row 22 of bonding pads. The minimum practical width of the pads is greater than the spacing between pads. Thus, in accordance with the present invention, conductive vias 24 provide for electrical connection of bonding pads 26 of inner row 20 to permit routing below bonding pads 28 of outer row 22.
  • Preferably, bonding pad rows 20 and 22 are staggered to allow maximal and uniform spacing of the bonding wires 30 and 32. Bonding wires 30 extend from every other die bonding pad 34 to the opposing package bonding pads 26 of inner row 20. Bonding wires 32 extend from the alternate die bonding pads 34 to the respective package bonding pads 28 of outer row 22.
  • As shown in FIG. 3, package l4 is constituted of several layers, including layers 43 and 44, of insulating ceramic material. Package l4 also includes a large number of conductive pins, including pins 6l-65, which provide for physical attachment and electrical interfacing to an incorporating system. Metallized strips or "fingers" include bonding pads 26 and 28 of FIG. l and serve as conductive paths to the pins.
  • The finger to pin 6l includes an inner bonding pad 26, a via 24, a conductive segment 36 along layer 43, and a via 7l. The finger to pin 62 includes an outer bonding pad 28, a conductive segment 38 along layer 44, and a via 72. Fingers (not illustrated) to the other pins follow this alternating pattern.
  • Various design constraints can render an alternative embodiment more optimal. Integrated circuit assembly ll0, illustrated in Fig. 4, is virtually identical to the embodiment described above except with respect to the conductive paths between the package bonding pads and the pins.
  • In assembly ll0, the conductive finger to pin l62 includes an inner bonding pad l26, via l24, conductive segment 36l along layer l43, via 362 between layers l43 and l44, conductive segment 363 along layer l44 and via l72. The conductive finger to pin l6l includes an outer bonding pad l28, conductive segment 38l along layer l44, via 382 between layer l44 and l46, conductive segment 383 along layer l46, and via l7l.
  • The metallization patterns of assembly ll0 reflect the dedication of layer l43 as a ground plane so that only an inner portion is practically available for use by input or output signal fingers. Layers l43, l45 and l47 are ground planes which can be used to shield the signals carried by layers l44 and l46. Thus, each signal carrying layer l44, l46 is shielded above and below by a shielding layer.
  • For purposes of completeness, the embodiments illustrated in FIGS. 3 and 4 are shown with heat spreaders 80 and l80, while FIGS. l and 2 illustrated an embodiment without such a heat spreader, but with the die attached to a ceramic layer of the package. This is done for heat dissipation purposes and forms no part of the present invention.
  • The illustrated embodiment includes 260 pins arranged on a 0.l00ʺ pitch in a l9 × l9 array with an opening in the center for the die and a hermetic seal. The external package size is about l.96ʺ square. The ten ceramic layers constitute a total thickness of about 0.lʺ. The cavity is about 0.5lʺ square to accommodate the die which is about 0.4lʺ square. These dimensions are specific to the described embodiment, the invention being applicable to wide variations in such dimensions.
  • As is apparent to those skilled in the art, many variations and modifications of the embodiments described above are provided by the present invention. Therefore, the scope of the present invention is limited only by the following claims.

Claims (7)

1. A package for an integrated circuit comprising:
    plural layers, said package defining a cavity, a first of said layers defining a bonding shelf adjacent said cavity;
    bonding pads arranged on said bonding shelf in plural rows including an outer row spaced from said cavity and an inner row located between said outer row and said cavity;
    electrical contacts physically connected with said package, said contacts providing for electrical communication with an incorporating system; and
    conductive paths, each path providing an electrical connection between at least one of said contacts and at least one of said bonding pads, said conductive paths including a first conductive path electrically connecting a first of said bonding pads of said inner row with a first of said contacts, said first conductive path including a conductive first segment disposed upon a second of said layers, said first conductive path including a via electrically connecting said first bonding pad with said first segment so that said first conductive path is electrically isolated from all conductive paths of said outer row.
2. The package of Claim l further characterized in that said first conductive path includes a second segment disposed upon said first layer, said first conductive path including a via electrically connecting said first segment with said second segment.
3. The package of Claim 2 further characterized in that said plural layers include a third layer, and in that each conductive path including a pad in said outer row includes a proximal segment disposed on said first layer and a distal segment disposed on said third layer.
4. The package of Claim 3 further characterized in that each conductive path including a pad in said outer row includes a via electrically connecting the respective proximal segment with the respective distal segment.
5. An integrated circuit assembly comprising:
    plural layers, said package defining a cavity, a first of said layers defining a bonding shelf adjacent said cavity;
    an integrated circuit disposed within said cavity, said integrated circuit including conductive pads;
    bonding pads arranged on said bonding shelf in plural rows including an outer row spaced from said cavity and a inner row located between said outer row and said cavity;
    bonding wires for electrically connecting said bonding pads with said conductive pads;
    contacts physically connected with said package, said contacts providing for electrical communication with an incorporating system; and
    conductive paths, each path defining an electrical connection between at least one of said contacts and at least one of said bonding pads, said conductive paths including a first conductive path electrically connecting a first of said bonding pads of said inner row with a first of said contacts, said first conductive path including a conductive first segment disposed upon a second of said layers.
6. The integrated circuit assembly of Claim 7 further characterized in that said first conductive path includes a via electrically connecting said first bonding pad with said first segment so that said first conductive path is electrically isolated from all conductive paths of said outer row.
7. The integrated circuit assembly of Claim l further characterized in that said first conductive path includes a second segment disposed upon said first layer, said first conductive path including a via electrically connecting said first segment with said second segment, said plural layers including a third layer, each conductive path with a pad in said outer row including a proximal segment disposed on said first layer and a distal segment disposed on said third layer, each conductive path with a pad in said outer row having a via electrically connecting the respective proximal segment with the respective distal segment.
EP87400729A 1986-04-04 1987-04-03 Single bonding shelf, multi-row, wire-bond finger layout for integrated circuit package Withdrawn EP0240433A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/848,302 US4890153A (en) 1986-04-04 1986-04-04 Single bonding shelf, multi-row wire-bond finger layout for integrated circuit package
US848302 1992-03-09

Publications (2)

Publication Number Publication Date
EP0240433A2 true EP0240433A2 (en) 1987-10-07
EP0240433A3 EP0240433A3 (en) 1988-01-27

Family

ID=25302924

Family Applications (1)

Application Number Title Priority Date Filing Date
EP87400729A Withdrawn EP0240433A3 (en) 1986-04-04 1987-04-03 Single bonding shelf, multi-row, wire-bond finger layout for integrated circuit package

Country Status (3)

Country Link
US (1) US4890153A (en)
EP (1) EP0240433A3 (en)
JP (1) JPS63260042A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0750204B1 (en) * 1995-06-22 2005-08-24 Hitachi, Ltd. Optical semiconductor array module, method of fabricating the module, and external board mounting structure of the module
US7691680B2 (en) 2003-03-04 2010-04-06 Micron Technologies, Inc. Method of fabricating microelectronic component assemblies employing lead frames having reduced-thickness inner lengths
US7696003B2 (en) 2004-07-23 2010-04-13 Micron Technology, Inc. Microelectronic component assemblies with recessed wire bonds and methods of making same

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8918482D0 (en) * 1989-08-14 1989-09-20 Inmos Ltd Packaging semiconductor chips
EP0463758A1 (en) * 1990-06-22 1992-01-02 Digital Equipment Corporation Hollow chip package and method of manufacture
US5043794A (en) * 1990-09-24 1991-08-27 At&T Bell Laboratories Integrated circuit package and compact assemblies thereof
US5155578A (en) * 1991-04-26 1992-10-13 Texas Instruments Incorporated Bond wire configuration and injection mold for minimum wire sweep in plastic IC packages
US5227583A (en) * 1991-08-20 1993-07-13 Microelectronic Packaging America Ceramic package and method for making same
US5229917A (en) * 1992-07-24 1993-07-20 The United States Of America As Represented By The Secretary Of The Air Force VLSI integration into a 3-D WSI dual composite module
WO1994025979A1 (en) * 1993-04-30 1994-11-10 Lsi Logic Corporation Integrated circuit with lead frame package having internal power and ground busses
US5478420A (en) * 1994-07-28 1995-12-26 International Business Machines Corporation Process for forming open-centered multilayer ceramic substrates
US7196313B2 (en) * 2004-04-02 2007-03-27 Fairchild Semiconductor Corporation Surface mount multi-channel optocoupler
US7772681B2 (en) * 2005-06-30 2010-08-10 Fairchild Semiconductor Corporation Semiconductor die package and method for making the same
US20090057852A1 (en) * 2007-08-27 2009-03-05 Madrid Ruben P Thermally enhanced thin semiconductor package
US20070164428A1 (en) * 2006-01-18 2007-07-19 Alan Elbanhawy High power module with open frame package
US7868432B2 (en) * 2006-02-13 2011-01-11 Fairchild Semiconductor Corporation Multi-chip module for battery power control
US7768075B2 (en) 2006-04-06 2010-08-03 Fairchild Semiconductor Corporation Semiconductor die packages using thin dies and metal substrates
US7656024B2 (en) 2006-06-30 2010-02-02 Fairchild Semiconductor Corporation Chip module for complete power train
US7564124B2 (en) * 2006-08-29 2009-07-21 Fairchild Semiconductor Corporation Semiconductor die package including stacked dice and heat sink structures
US8106501B2 (en) 2008-12-12 2012-01-31 Fairchild Semiconductor Corporation Semiconductor die package including low stress configuration
US7821116B2 (en) * 2007-02-05 2010-10-26 Fairchild Semiconductor Corporation Semiconductor die package including leadframe with die attach pad with folded edge
US7659531B2 (en) * 2007-04-13 2010-02-09 Fairchild Semiconductor Corporation Optical coupler package
US7683463B2 (en) * 2007-04-19 2010-03-23 Fairchild Semiconductor Corporation Etched leadframe structure including recesses
US7902657B2 (en) * 2007-08-28 2011-03-08 Fairchild Semiconductor Corporation Self locking and aligning clip structure for semiconductor die package
US20090057855A1 (en) * 2007-08-30 2009-03-05 Maria Clemens Quinones Semiconductor die package including stand off structures
US7589338B2 (en) * 2007-11-30 2009-09-15 Fairchild Semiconductor Corporation Semiconductor die packages suitable for optoelectronic applications having clip attach structures for angled mounting of dice
US20090140266A1 (en) * 2007-11-30 2009-06-04 Yong Liu Package including oriented devices
KR20090062612A (en) * 2007-12-13 2009-06-17 페어차일드코리아반도체 주식회사 Multi chip package
US7781872B2 (en) * 2007-12-19 2010-08-24 Fairchild Semiconductor Corporation Package with multiple dies
US8106406B2 (en) 2008-01-09 2012-01-31 Fairchild Semiconductor Corporation Die package including substrate with molded device
US7626249B2 (en) * 2008-01-10 2009-12-01 Fairchild Semiconductor Corporation Flex clip connector for semiconductor device
US20090194856A1 (en) * 2008-02-06 2009-08-06 Gomez Jocel P Molded package assembly
KR101524545B1 (en) * 2008-02-28 2015-06-01 페어차일드코리아반도체 주식회사 Power device package and the method of fabricating the same
US8018054B2 (en) * 2008-03-12 2011-09-13 Fairchild Semiconductor Corporation Semiconductor die package including multiple semiconductor dice
US7768108B2 (en) 2008-03-12 2010-08-03 Fairchild Semiconductor Corporation Semiconductor die package including embedded flip chip
KR101519062B1 (en) * 2008-03-31 2015-05-11 페어차일드코리아반도체 주식회사 Semiconductor Device Package
US20090278241A1 (en) * 2008-05-08 2009-11-12 Yong Liu Semiconductor die package including die stacked on premolded substrate including die
US8193618B2 (en) 2008-12-12 2012-06-05 Fairchild Semiconductor Corporation Semiconductor die package with clip interconnection
US7973393B2 (en) 2009-02-04 2011-07-05 Fairchild Semiconductor Corporation Stacked micro optocouplers and methods of making the same
US8421204B2 (en) 2011-05-18 2013-04-16 Fairchild Semiconductor Corporation Embedded semiconductor power modules and packages

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0027017A1 (en) * 1979-10-04 1981-04-15 Fujitsu Limited Integrated circuit package
GB2077036A (en) * 1980-05-15 1981-12-09 Cts Corp Multi-layer ceramic package for semiconductor chip
US4513355A (en) * 1983-06-15 1985-04-23 Motorola, Inc. Metallization and bonding means and method for VLSI packages

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0027017A1 (en) * 1979-10-04 1981-04-15 Fujitsu Limited Integrated circuit package
GB2077036A (en) * 1980-05-15 1981-12-09 Cts Corp Multi-layer ceramic package for semiconductor chip
US4513355A (en) * 1983-06-15 1985-04-23 Motorola, Inc. Metallization and bonding means and method for VLSI packages

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN, vol. 8, no. 95 (E-242)[1532], 2nd May 1984; & JP-A-59 014 652 (NIPPON DENKI K.K.) 25-01-1984 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0750204B1 (en) * 1995-06-22 2005-08-24 Hitachi, Ltd. Optical semiconductor array module, method of fabricating the module, and external board mounting structure of the module
US7691680B2 (en) 2003-03-04 2010-04-06 Micron Technologies, Inc. Method of fabricating microelectronic component assemblies employing lead frames having reduced-thickness inner lengths
US7696003B2 (en) 2004-07-23 2010-04-13 Micron Technology, Inc. Microelectronic component assemblies with recessed wire bonds and methods of making same

Also Published As

Publication number Publication date
US4890153A (en) 1989-12-26
JPS63260042A (en) 1988-10-27
EP0240433A3 (en) 1988-01-27
JPH03779B2 (en) 1991-01-08

Similar Documents

Publication Publication Date Title
US4890153A (en) Single bonding shelf, multi-row wire-bond finger layout for integrated circuit package
US7129574B2 (en) Multi-power ring chip scale package for system level integration
JP4592122B2 (en) Flip chip package with reduced number of package layers
US8129837B2 (en) Flip chip interconnection pad layout
US5373188A (en) Packaged semiconductor device including multiple semiconductor chips and cross-over lead
US5467252A (en) Method for plating using nested plating buses and semiconductor device having the same
US5717245A (en) Ball grid array arrangement
US5858815A (en) Semiconductor package and method for fabricating the same
US6888240B2 (en) High performance, low cost microelectronic circuit package with interposer
US5982632A (en) Short power signal path integrated circuit package
EP0807369A1 (en) Stackable modules and multimodular assemblies
JPH0587977B2 (en)
EP0729645B1 (en) A high density integrated circuit assembly combining leadframe leads with conductive traces
US5650660A (en) Circuit pattern for a ball grid array integrated circuit package
US5569955A (en) High density integrated circuit assembly combining leadframe leads with conductive traces
JP2001351983A (en) Semiconductor device and its manufacturing method
US5726860A (en) Method and apparatus to reduce cavity size and the bondwire length in three tier PGA packages by interdigitating the VCC/VSS
EP1361612A2 (en) Organic substrate for flip chip bonding
JPS5854661A (en) Multilayer ceramic semiconductor package
EP0272188A2 (en) Ceramic package for high frequency semiconductor devices
US11688678B2 (en) Wiring board and semiconductor device
EP0398628A2 (en) Semiconductor memory device
EP0262493B1 (en) Electronic package with distributed decoupling capacitors
US7105926B2 (en) Routing scheme for differential pairs in flip chip substrates
JPH0645386A (en) Semiconductor circuit device

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE FR GB IT NL

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): DE FR GB IT NL

17P Request for examination filed

Effective date: 19880823

17Q First examination report despatched

Effective date: 19900810

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 19920501

RIN1 Information on inventor provided before grant (corrected)

Inventor name: WU, CHING-AN