EP0244767A3 - Hermetic semiconductor enclosure and process of manufacture - Google Patents

Hermetic semiconductor enclosure and process of manufacture Download PDF

Info

Publication number
EP0244767A3
EP0244767A3 EP19870106292 EP87106292A EP0244767A3 EP 0244767 A3 EP0244767 A3 EP 0244767A3 EP 19870106292 EP19870106292 EP 19870106292 EP 87106292 A EP87106292 A EP 87106292A EP 0244767 A3 EP0244767 A3 EP 0244767A3
Authority
EP
European Patent Office
Prior art keywords
package
manufacture
signals
semiconductor enclosure
hermetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP19870106292
Other languages
German (de)
French (fr)
Other versions
EP0244767A2 (en
Inventor
Victor Albert Keith Temple
Alexander John Yerman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silicon Power Corp
Original Assignee
Silicon Power Corp
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Power Corp, General Electric Co filed Critical Silicon Power Corp
Publication of EP0244767A2 publication Critical patent/EP0244767A2/en
Publication of EP0244767A3 publication Critical patent/EP0244767A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2924/01006—Carbon [C]
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    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
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    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
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    • H01L2924/12042—LASER
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
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    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Abstract

A semiconductor hermetic package for semiconductor device comprises base, sidewall and cover members. Signals can be coupled between the enclosed devices and external devices by coupling means including conductive regions dis­ posed in and through the package. Light pipes or conductive tracks and paths extending through the package can be used to couple the signals. A portion of the package can function as a grading resistance.
EP19870106292 1986-05-05 1987-04-30 Hermetic semiconductor enclosure and process of manufacture Withdrawn EP0244767A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US85959886A 1986-05-05 1986-05-05
US859598 1986-05-05

Publications (2)

Publication Number Publication Date
EP0244767A2 EP0244767A2 (en) 1987-11-11
EP0244767A3 true EP0244767A3 (en) 1988-08-03

Family

ID=25331303

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19870106292 Withdrawn EP0244767A3 (en) 1986-05-05 1987-04-30 Hermetic semiconductor enclosure and process of manufacture

Country Status (2)

Country Link
EP (1) EP0244767A3 (en)
JP (1) JPS62291051A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4907065A (en) * 1988-03-01 1990-03-06 Lsi Logic Corporation Integrated circuit chip sealing assembly
EP0431261A1 (en) * 1989-12-07 1991-06-12 International Business Machines Corporation Integrated circuit package with cap and device of the same material
US5139972A (en) * 1991-02-28 1992-08-18 General Electric Company Batch assembly of high density hermetic packages for power semiconductor chips
US5473193A (en) * 1994-01-06 1995-12-05 Harris Corporation Package for parallel subelement semiconductor devices
DE19950026B4 (en) 1999-10-09 2010-11-11 Robert Bosch Gmbh The power semiconductor module
CN114823928B (en) * 2022-04-26 2024-02-20 中国电子科技集团公司第四十三研究所 Photoelectric packaging shell and manufacturing process thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3975758A (en) * 1975-05-27 1976-08-17 Westinghouse Electric Corporation Gate assist turn-off, amplifying gate thyristor and a package assembly therefor
US4032960A (en) * 1975-01-30 1977-06-28 General Electric Company Anisotropic resistor for electrical feed throughs
WO1982002800A1 (en) * 1981-02-02 1982-08-19 Varian Associates Optoelectronic assembly including light transmissive window
EP0079265A1 (en) * 1981-11-06 1983-05-18 Thomson-Csf Method of producing a pedestal for mounting a semiconductor chip on the base of an encapsulating housing
WO1985005733A1 (en) * 1984-05-30 1985-12-19 Motorola, Inc. High density ic module assembly
EP0167078A1 (en) * 1984-07-05 1986-01-08 Siemens Aktiengesellschaft Light-triggered thyristor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4032960A (en) * 1975-01-30 1977-06-28 General Electric Company Anisotropic resistor for electrical feed throughs
US3975758A (en) * 1975-05-27 1976-08-17 Westinghouse Electric Corporation Gate assist turn-off, amplifying gate thyristor and a package assembly therefor
WO1982002800A1 (en) * 1981-02-02 1982-08-19 Varian Associates Optoelectronic assembly including light transmissive window
EP0079265A1 (en) * 1981-11-06 1983-05-18 Thomson-Csf Method of producing a pedestal for mounting a semiconductor chip on the base of an encapsulating housing
WO1985005733A1 (en) * 1984-05-30 1985-12-19 Motorola, Inc. High density ic module assembly
EP0167078A1 (en) * 1984-07-05 1986-01-08 Siemens Aktiengesellschaft Light-triggered thyristor device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN, vol. 7, no. 8 (E-152)[1153], 13th January 1983; & JP-A-57 166 052 (MITSUBISHI DENKI K.K.) 13.10.1982 *
PATENT ABSTRACTS OF JAPAN, vol. 9, no. 325 (E-368)[2048], 20th December 1985; & JP-A-60 157 255 (MITSUBISHI DENKI K.K.) 17-08-1985 *

Also Published As

Publication number Publication date
EP0244767A2 (en) 1987-11-11
JPS62291051A (en) 1987-12-17

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