EP0254691A2 - Method and apparatus for testing eprom type semiconductor devices during burn-in - Google Patents

Method and apparatus for testing eprom type semiconductor devices during burn-in Download PDF

Info

Publication number
EP0254691A2
EP0254691A2 EP87830271A EP87830271A EP0254691A2 EP 0254691 A2 EP0254691 A2 EP 0254691A2 EP 87830271 A EP87830271 A EP 87830271A EP 87830271 A EP87830271 A EP 87830271A EP 0254691 A2 EP0254691 A2 EP 0254691A2
Authority
EP
European Patent Office
Prior art keywords
devices
cards
burn
chamber
slots
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP87830271A
Other languages
German (de)
French (fr)
Other versions
EP0254691A3 (en
EP0254691B1 (en
Inventor
Lucio Cozzi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Microelettronica SpA
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Microelettronica SpA, SGS Thomson Microelectronics SRL filed Critical SGS Microelettronica SpA
Publication of EP0254691A2 publication Critical patent/EP0254691A2/en
Publication of EP0254691A3 publication Critical patent/EP0254691A3/en
Application granted granted Critical
Publication of EP0254691B1 publication Critical patent/EP0254691B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/286External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2868Complete testing stations; systems; procedures; software aspects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2642Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50Marginal testing, e.g. race, voltage or current testing
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50Marginal testing, e.g. race, voltage or current testing
    • G11C29/50012Marginal testing, e.g. race, voltage or current testing of timing
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50Marginal testing, e.g. race, voltage or current testing
    • G11C29/50016Marginal testing, e.g. race, voltage or current testing of retention
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS

Definitions

  • the present invention generally relates to the produc­tion techniques of integrated circuits and, more particu­larly, to the quality control procedures which, inserted as they are in the manufacturing flow, may be considered under many aspects an integral part of the production process itself.
  • the present invention concerns, in fact, an apparatus and a method for testing the functions and parametric characteristics of integrated circuits, particularly of integrated circuits containing sections of read-only type EPROM memory (acronym of Erasable Programmable Read-Only Memory).
  • the quality and reliability of semiconductor devices are based, besides on the technology employed in the fabrication process, on a series of tests to which the product is subjected before being delivered to the user.
  • the time required to run an N2 test pattern on a typical 16K RAM is of about a minute; for a 64K RAM, it increases to about 30 minutes; and for a 256K RAM, it becomes of 8 hours.
  • Such test times are, on the other hand, easily accomodated in the times necessary to effect the burn-in treatment.
  • Test programs must be under the control of a central processing unit (CPU) that is capable of monitoring inputs and outputs of the devices under test to verify the validity of the tests.
  • CPU central processing unit
  • the working temperature is, in fact, directly responsible of the recombination or loss of electrical charges stored in the permanent memory element represented by a "floating gate” structure, which is the site of the data programmed in the device by injection of a certain electrical charge in such a floating structure, i.e. completely insulated from the rest of the circuit.
  • EPROM devices in contrast with other devices such as microprocessors and random access memories (RAM), show another peculiarity typical of their function: they must be programmed with a specific content and then checked for their function. Thereafter in order to confirm their function with a different content, the same devices must be erased by exposure to a U.V. (ultraviolet) radiation for about 10-15 minutes.
  • U.V. ultraviolet
  • the system object of the present invention overcomes completely the above noted program and permits to effect and entire series of functional tests for checking the content of the appropriately programmed memory cells, of tests to establish the parametric (DC)characteristics of the devices, of dynamic tests to verify the access time (TAC) and of recording the classification for a subsequent marking of the devices, during the time they remain inside the burn-in chamber, thus efficiently integrating such tests with the thermal burn-in treatment itself.
  • DC parametric
  • TAC access time
  • the apparatus for testing the function and the characteristics of EPROM type semiconductor devices during burn-in comprises means for erasing the EPROM by irradiating them with U.V. light, means for programming the EPROM, means for verifying the effected programming, means for effecting the burn-in of the programmed devices, means for verifying the retention of programmed data, means for measuring the parametric (DC) and dynamic (TAC) characteristics of the devices and means for classifying and handling the single devices.
  • the apparatus comprises essentially:
  • a backend flow diagram of a manufacturing process incorporating the test method of the invention for deter­mining the correct function and the characteristics of EPROM type semiconductor devices during the burn-in trea­tment comprises the following steps:
  • Fig. 1 shows the general architecture of the system of the invention.
  • Fig. 1 two substantially identical distinct systems, generally indicated with 1 and 2, are shown.
  • Each distinct system has a proper console 4, associated with a CPU, and which is provided with a key board 5 and monitor 6.
  • Each system comprises one or more ovens 3, provided with heating means and with means for controlling the temperature inside the chamber of the oven, preferably under control of the CPU.
  • the windows present on the front wall of the ovens 3, shown in Fig. 1, are indicated with 9, while the windows present on the back wall of the ovens are indicated with 10.
  • Such windows or slots 9 and 10 permit the insertion inside the oven 3 of an equal number of cards 7 and 8.
  • Fig. 3 shows the configuration of each of said windows 9 or 10.
  • Each window or slot is defined through the insulating wall of the oven 13 by a frame 11 fitted in a suitable opening cut through said wall 13 and having an aperture or central port of substantially rectangular section which extends through the thickness of said frame in a tapering way to form a slot having a truncated pyramid passage whose major base corresponds with the external surface 14 of the oven and whose minor base corresponds with the internal surface 15 of the oven chamber wall.
  • each individual slot may be advantageously formed by two pairs of flaps, 12a and 12b, suitably hinged and provided with elastic return means (e.g. springs) as to automatically close when a card is not inserted through the slot.
  • elastic return means e.g. springs
  • Naturally other automatic means for closing the aperture of the slots in absence of cards inserted through the same may be devised and utilized for the purpose.
  • the frame 11 is made with a heat insulating material to avoid constituting a heat bridge between the internal chamber of the oven and the room environment.
  • a card 7 comprises two parts or sections; a first part 16 is provided, on a face thereof, with a plurality of parallel connected sockets in­to which an equal number of EPROM devices, 17, to be subjected to burn-in and to be tested may be plugged, and a second part or section 18 containing a microprocessor typically formed by a central processing unit, a read-only memory, a random access memory, as well as input and output interfacing stages (CPU, ROM, RAM, I/O).
  • the two parts 16 and 18 are separated by a central body 19, shaped as a truncated pyramid with rectangular base, matching with the central opening of the frame 11 of said windows 9.
  • Such a central coupling body 19 will be also preferably made of insulating material.
  • the card may be provided with a handle 20 for improving handling thereof.
  • Means, not shown, for connecting the card's microprocessor to the system's CPU as well as to the power supply are also contemplated within the portion 18 of each card.
  • This second type of cards comprises a frame 21 capable of accommodating one or, preferably, more U.V. lamps 22 functionally mounted in appropriate sockets fixed to the frame 21.
  • this second type of cards 8 may be conveniently provided with a handle 20 .
  • the relative arrangement of the two types of cards inside the oven's chamber is such that each card 8 carrying the U.V. lamps is inserted between a pair of devices carrying cards 7 which are mounted so as to ensure that the devices 17, arranged on one of the two sides of each of the pair of cards, be opposing the U.V. lamps 22 mounted on the card 8.
  • the devices cards 7 are mounted through the slots of the front wall 13 of the ovens, while the U.V. lamp cards 8 are suitably inserted through slots of the back wall 13 ⁇ of the ovens.
  • the portion 18 of the devices cards 7 containing the microprocessors and the portion 23 of the U.V. lamps cards 8, containing the swithching means for the lamps, remain outside the hot chamber of the oven.
  • the microprocessor contained in the external portion 18 of the devices cards 7 executes, among others, the following functions:
  • the system's CPU provides also to send the switch-on and switch-off signals for the U.V. lamps mounted on the various cards 8 for carrying out the erasing operations of the data programmed into the EPROM devices being tested during specific phases of the entire burn-in cycle and of the functional testing and of the determination of the parametric characteristics of the devices.
  • the system's CPU performs a general super­visory function of the system determining the contem­plated test sequence during the burn-in heat treatment.
  • the CPU records and processes data generated by the testing and it is capable of directing the "intelligent" unloading of the EPROM devices from the test cards at the end of the cycle, by guiding the action of an unloading "robot” which will unplug one by one the devices from each card, placing each device in a classified container or tube in function of the detected and recorded performances of each individual device.
  • FIG. 1 A presently preferred flow chart of the process of the invention is shown in Fig. 1. Such a flow chart may be considered indicative of a backend production flow of EPROM type semiconductor devices.
  • the single devices whose memory cells have been all programmed to "0", coming directly from the assembly lines without having been through any quality test, are loaded in metal tubes (usually aluminun tubes) and placed in an oven at 170°C for 72 hours.
  • the tubes containing the devices are then moved to an automatic machine for loading the devices on the special burn-in cards of the system of the invention.
  • the loading robot provides to plug the devices in the sockets of the card and, upon plugging, the card microprocessor verifies the presence or absence of short circuits at the outputs of the devices; in an affermative case, the device is immediately unplugged from the socket and placed among rejects.
  • Each card, completely loaded with devices, is introduced into the burn-in oven and connected to the system's CPU.
  • the devices loaded on to the cards are then subjected to a dynamic burn-in treatment at 125°C for 24 hours during which time the devices undergo the following tests:
  • the cards containing the devices are moved to an automatic machine or robot which provides to unplug the devices from the sockets of the cards and, in function of the grade or classification attributed to the device (depending upon the results of the tests to which the device has been subjected) which has been memorized by the card microprocessor, to deposite the single devices into relative classified tubes.
  • the devices are then stamped and erased.
  • the devices may be considered ready for shipment although a further checking of the erasure of the test data and/or an eventual second access time test may also be contemplated.
  • the described sequence may, of course, be made completely automatic by providing suitable transfer means for the cards and for the tubes.
  • the apparatus object of the present invention permits of essentially combining the burn-in test with functional and parametric testing of the EPROM devices, thus reducing in a large measure the test times and the handling of the devices besides permitting to perform the parametric and functional tests of the EPROM devices while they are being subjected to the burn-in treatment, thus ensuring a higher degree of reliability of the product.

Abstract

An apparatus and a relative method which permit to carry out a complete cycle of functional tests and parametric measurements on EPROM type semiconductor devices during their permanence inside a burn-in chamber, thus greatly reducing the time necessary for testing and classifying the devices, besides ensuring a higher reliability. The systems utilizes special "intelligent" cards, i.e. provided with a card microprocessor which may be connected to a supervisory system's CPU directing the test and classification process of the devices.

Description

  • The present invention generally relates to the produc­tion techniques of integrated circuits and, more particu­larly, to the quality control procedures which, inserted as they are in the manufacturing flow, may be considered under many aspects an integral part of the production process itself.
  • The present invention concerns, in fact, an apparatus and a method for testing the functions and parametric characteristics of integrated circuits, particularly of integrated circuits containing sections of read-only type EPROM memory (acronym of Erasable Programmable Read-Only Memory).
  • The quality and reliability of semiconductor devices are based, besides on the technology employed in the fabrication process, on a series of tests to which the product is subjected before being delivered to the user.
  • One of the tests regarded as one of the most severe is that of subjecting the devices to particularly high temperatures; typically between 85°C and 150°C, for accelarating infant mortalities in a population of semi­conductor devices. This test, also known among the experts of the field as "burn-in" has the objective of provoking or otherwise stimulating the failure of those devices which have developed some defects during the fabrication process and/or during handling and whose structure thus contains some elemens of precariousness.
  • Since the burn-in treatment requires that thousands of devices be plugged into parallel sockets mounted on appropriate cards suitable to be inserted in a heat treatment chamber for a considerable number of hours, becomes economically desirable to be able to perform a series of functional tests of the devices during their "captivity" into the burn-in chamber. This demand has intensified as memories and logic devices have become increasingly dense and complex, thus requiring increasing­ly longer test times.
  • For example, the time required to run an N² test pattern on a typical 16K RAM, is of about a minute; for a 64K RAM, it increases to about 30 minutes; and for a 256K RAM, it becomes of 8 hours. Such test times are, on the other hand, easily accomodated in the times necessary to effect the burn-in treatment.
  • Adequate functional testing during burn-in requires sophisticated pattern-generation and advanced control and data-processing capabilities. Test programs must be under the control of a central processing unit (CPU) that is capable of monitoring inputs and outputs of the devices under test to verify the validity of the tests.
  • The possibility of effecting functional tests while the devices are kept at high temperatures, becomes particular­ly important in the case of EPROM type devices. The working temperature is, in fact, directly responsible of the recombination or loss of electrical charges stored in the permanent memory element represented by a "floating gate" structure, which is the site of the data programmed in the device by injection of a certain electrical charge in such a floating structure, i.e. completely insulated from the rest of the circuit.
  • The higher the temperature, the higher the probability that electrical charges stored in the floating gate acquire sufficient energy to overcome the potential barrier represented by the insulation thus disappearing from their assigned site and thus modifying the informa­tion stored therein.
  • Moreover, EPROM devices, in contrast with other devices such as microprocessors and random access memories (RAM), show another peculiarity typical of their function: they must be programmed with a specific content and then checked for their function. Thereafter in order to confirm their function with a different content, the same devices must be erased by exposure to a U.V. (ultraviolet) radiation for about 10-15 minutes.
  • This erasing operation is of great encumbrance in the flow relative to the last steps of the production process which includes the burn-in treatment too. According to prior art methods, it is necessary to remove from the burn-in chamber the devices for subjecting them to U.V. radiation and thence to replug them into the sockets of the cards to be reinserted into the burn-in chambers. Because of these difficulties, it is usually preferred to effect the burn-in test with a single content of the devices (i.e. with a single test pattern programmed into the devices) with an evident degradation of the qualita­tive objectives of the test itself.
  • The system object of the present invention overcomes completely the above noted program and permits to effect and entire series of functional tests for checking the content of the appropriately programmed memory cells, of tests to establish the parametric (DC)characteristics of the devices, of dynamic tests to verify the access time (TAC) and of recording the classification for a subsequent marking of the devices, during the time they remain inside the burn-in chamber, thus efficiently integrating such tests with the thermal burn-in treatment itself.
  • According to one of the main aspects of the system of the invention, the apparatus for testing the function and the characteristics of EPROM type semiconductor devices during burn-in, comprises means for erasing the EPROM by irradiating them with U.V. light, means for programming the EPROM, means for verifying the effected programming, means for effecting the burn-in of the programmed devices, means for verifying the retention of programmed data, means for measuring the parametric (DC) and dynamic (TAC) characteristics of the devices and means for classifying and handling the single devices. The apparatus comprises essentially:
    • a) at least a burn-in chamber provided, over at least a wall thereof, with a plurality of slots having closing means and suitable to receive a card assembly;
    • b) a plurality of system's card assemblies, each comprising a first portion provided with a plurality of sockets for plugging in devices and a second part containing a microprocessor, between said two parts of the card assembly being present a plugging body shaped in a way as to match with said slots so that said second part of the card remains outside said chamber upon insertion of the card into a slot;
    • c) a plurality of cards containing one or more U.V. lamps, each card comprising a first part provided with said one or more U.V. lamps and a second part containing switching means and electrical supply means for said lamps, a plugging body sealingly insertable into said slots being present between said two parts of the card so that said second part of the card remains outside said chamber upon insertion of the card into a receiving slot;
    • d) a CPU interfaced with each microprocessors of said system's cards and with the switching means of said U.V. lamps containing cards.
  • A backend flow diagram of a manufacturing process incorporating the test method of the invention for deter­mining the correct function and the characteristics of EPROM type semiconductor devices during the burn-in trea­tment, comprises the following steps:
    • A) programming to an "all 0" pattern the cells of the EPROM devices as received from the assembly lines;
    • B) loading the devices into tubes and storing the tubes at a temperature equal to or greater than 170°C for at least 72 hours;
    • C) automatic loading of single devices from said tubes on system's cards provided with suitable sockets, verification, upon plugging-in of the devices, of the validity of the data programmed during step A) and automatic rejection of nonvalidated devices;
    • D) dynamic burn-in treatment at a temperature equal to or greater than 125°C carried out in a burn-in chamber and subjecting the devices plugged into said sockets of said cards to the following tests:
      • i) verification of the "0" status of all the EPROM cells;
      • ii) erasing;
      • iii) programming of a test pattern;
      • iv) verification of the test pattern;
      • v) repetition of steps ii), iii) and iv) for a "n" number of different test patterns;
      • vi) classification of the single devices according to particular quality classes;
      • vii) programming of a special pattern for subsequent testing;
    • E) automatic unplugging of the devices from the sockets of said system's cards and their classification by automatic insertion of the devices into classified tubes in accordance with particular quality grades;
    • F) testing of dynamic (TAC) parameters of the devices and further classification of devices in function of the determined individual dynamic characteristics;
    • G) stamping of the devices and final erasing of the data still present in the memory cells.
  • The invention, its different aspects and advantages will be more easily understood through the following description, having a purely illustrative and nonlimita­tive character, of a preferred embodiment of the invention illustrated also by a series of annexed drawings, wherein
    • Figure 1 is a perspective view of two integrated burn-­in, functional testing, AC and DC parametric testing systems for EPROM type semiconductor devices in accordance with the present invention;
    • Figure 2 is an enlarged view of the front portion of one of the ovens or heat treatment chambers used in the system of the invention;
    • Figure 3 is a partial sectional view of one of the "windows" or slots for inserting cards containing the devices to be tested present on front and back walls of the ovens;
    • Figure 4 is a schematic, perspective view of one of the system's cards;
    • Figure 5 is a schematic, perspective view of one of the cards containing U.V. lamps used in the system of the invention;
    • Figure 6 is a partial, schematic, sectional, plan view of one of the ovens used in the system of the invention, showing the arrangment of the different cards inside the oven;
    • Figure 7 shows a functional flow diagram of the method of the invention.
  • Fig. 1 shows the general architecture of the system of the invention. In Fig. 1 two substantially identical distinct systems, generally indicated with 1 and 2, are shown. Each distinct system has a proper console 4, associated with a CPU, and which is provided with a key board 5 and monitor 6. Each system comprises one or more ovens 3, provided with heating means and with means for controlling the temperature inside the chamber of the oven, preferably under control of the CPU. On at least a wall and more preferably on two opposite walls of each oven, there is a series of "windows" (or slots), individually provided with closing means. The windows present on the front wall of the ovens 3, shown in Fig. 1, are indicated with 9, while the windows present on the back wall of the ovens are indicated with 10. Such windows or slots 9 and 10 permit the insertion inside the oven 3 of an equal number of cards 7 and 8.
  • The enlarged showing of a single oven 3 in Fig. 2 permits to observe, in greater detail, the arrangement of such windows 9 on the front side of the oven 3 as well as of a card 7, inserted into one of such slots.
  • Fig. 3 shows the configuration of each of said windows 9 or 10. Each window or slot is defined through the insulating wall of the oven 13 by a frame 11 fitted in a suitable opening cut through said wall 13 and having an aperture or central port of substantially rectangular section which extends through the thickness of said frame in a tapering way to form a slot having a truncated pyramid passage whose major base corresponds with the external surface 14 of the oven and whose minor base corresponds with the internal surface 15 of the oven chamber wall.
  • The closing means of each individual slot may be advantageously formed by two pairs of flaps, 12a and 12b, suitably hinged and provided with elastic return means (e.g. springs) as to automatically close when a card is not inserted through the slot. Naturally other automatic means for closing the aperture of the slots in absence of cards inserted through the same may be devised and utilized for the purpose.
  • Preferably the frame 11 is made with a heat insulating material to avoid constituting a heat bridge between the internal chamber of the oven and the room environment.
  • The system utilizes a plurality of cards 7 having the configuration shown in Fig. 4. A card 7 comprises two parts or sections; a first part 16 is provided, on a face thereof, with a plurality of parallel connected sockets in­to which an equal number of EPROM devices, 17, to be subjected to burn-in and to be tested may be plugged, and a second part or section 18 containing a microprocessor typically formed by a central processing unit, a read-only memory, a random access memory, as well as input and output interfacing stages (CPU, ROM, RAM, I/O). The two parts 16 and 18 are separated by a central body 19, shaped as a truncated pyramid with rectangular base, matching with the central opening of the frame 11 of said windows 9. Such a central coupling body 19 will be also preferably made of insulating material.
  • The card may be provided with a handle 20 for improving handling thereof.
  • Means, not shown, for connecting the card's microprocessor to the system's CPU as well as to the power supply are also contemplated within the portion 18 of each card.
  • The configuration of the second type of cards utilized by the apparatus of the present invention is shown in Fig. 5. This second type of cards comprises a frame 21 capable of accommodating one or, preferably, more U.V. lamps 22 functionally mounted in appropriate sockets fixed to the frame 21. A central body 19, having a truncated pyramid shape similar to that of the system's card described in Fig. 4, provides coupling means with the opening of said windows 10 in the wall of the oven. In the part 23 of the card which remains outside of the oven chamber when the card is inserted into one of the slots, there are supply and switching means for the U.V. lamps 22 as well as means for the electric interconnection to the rest of the system's circuit. Also this second type of cards 8 may be conveniently provided with a handle 20 .
  • The relative arrangement into the oven of the two types of cards, i.e. of the devices carrying cards 7 and of the U.V. lamps cards 8, is shown in Fig. 6.
  • Essentially, the relative arrangement of the two types of cards inside the oven's chamber is such that each card 8 carrying the U.V. lamps is inserted between a pair of devices carrying cards 7 which are mounted so as to ensure that the devices 17, arranged on one of the two sides of each of the pair of cards, be opposing the U.V. lamps 22 mounted on the card 8. Preferably, the devices cards 7 are mounted through the slots of the front wall 13 of the ovens, while the U.V. lamp cards 8 are suitably inserted through slots of the back wall 13ʹ of the ovens.
  • As it may be easily observed in the schematic showing of Fig. 6, upon insertion, the portion 18 of the devices cards 7 containing the microprocessors and the portion 23 of the U.V. lamps cards 8, containing the swithching means for the lamps, remain outside the hot chamber of the oven.
  • The microprocessor contained in the external portion 18 of the devices cards 7 executes, among others, the following functions:
    • A) suitably elaborates the signals sent to the EPROM devices being tested mounted on the card as to perform the programming and verification functions of the data content by performing pre-established different test patterns; classifies the devices into quality categories in function of the checked performances and detects rejects;
    • B) interfaces with the system's CPU, receiving from the latter supervisory commands relative to the operations to be performed on the EPROM devices, communicates back to the system's CPU the results of these operations; these information will be stored by the CPU for subsequently governing the "intelligent" unloading of the devices from the burn-in cards.
  • The system's CPU provides also to send the switch-on and switch-off signals for the U.V. lamps mounted on the various cards 8 for carrying out the erasing operations of the data programmed into the EPROM devices being tested during specific phases of the entire burn-in cycle and of the functional testing and of the determination of the parametric characteristics of the devices.
  • Therefore, the system's CPU performs a general super­visory function of the system determining the contem­plated test sequence during the burn-in heat treatment. The CPU records and processes data generated by the testing and it is capable of directing the "intelligent" unloading of the EPROM devices from the test cards at the end of the cycle, by guiding the action of an unloading "robot" which will unplug one by one the devices from each card, placing each device in a classified container or tube in function of the detected and recorded performances of each individual device.
  • Such procedures for the classification of EPROM devices in accordance with their quality, as well as such means and procedures for the automation of handling and selection of the devices are well known to the expert technician of the field and therefore, in order not to unduly burden the present specification, will not be described, referring the reader to the vast and easily accessible literature on this particular topic.
  • A presently preferred flow chart of the process of the invention is shown in Fig. 1. Such a flow chart may be considered indicative of a backend production flow of EPROM type semiconductor devices.
  • The single devices whose memory cells have been all programmed to "0", coming directly from the assembly lines without having been through any quality test, are loaded in metal tubes (usually aluminun tubes) and placed in an oven at 170°C for 72 hours.
  • The tubes containing the devices are then moved to an automatic machine for loading the devices on the special burn-in cards of the system of the invention. The loading robot provides to plug the devices in the sockets of the card and, upon plugging, the card microprocessor verifies the presence or absence of short circuits at the outputs of the devices; in an affermative case, the device is immediately unplugged from the socket and placed among rejects.
  • Each card, completely loaded with devices, is introduced into the burn-in oven and connected to the system's CPU.
  • The devices loaded on to the cards are then subjected to a dynamic burn-in treatment at 125°C for 24 hours during which time the devices undergo the following tests:
    • i) verification of state "0" retention by all EPROM cells;
    • ii) erasure;
    • iii) programming of a first test pattern;
    • iv) verification of the first test pattern;
    • v) repetition of steps ii), iii) and iv) for a "n" number of different test patterns;
    • vi) programming of a special checker-board pattern in order to prepare the EPROM devices for the subsequent dynamic testing for determining the access time (TAC).
  • The cards containing the devices are moved to an automatic machine or robot which provides to unplug the devices from the sockets of the cards and, in function of the grade or classification attributed to the device (depending upon the results of the tests to which the device has been subjected) which has been memorized by the card microprocessor, to deposite the single devices into relative classified tubes.
  • Different lots of devices already classified in function of their shown performances in respect of the parametric testing and functional testing may be fed to an automatic testing apparatus for the determination of the access time (TAC) and for the relative further classifica­tion of the devices into quality grades.
  • The devices are then stamped and erased.
  • At this point the devices may be considered ready for shipment although a further checking of the erasure of the test data and/or an eventual second access time test may also be contemplated.
  • The described sequence may, of course, be made completely automatic by providing suitable transfer means for the cards and for the tubes.
  • The type, the number and the re-iteration of the various tests, as well as the residence times and the test temperatures may be also different from those indicated in order to satisfy particular requirements. In all cases the apparatus object of the present invention permits of essentially combining the burn-in test with functional and parametric testing of the EPROM devices, thus reducing in a large measure the test times and the handling of the devices besides permitting to perform the parametric and functional tests of the EPROM devices while they are being subjected to the burn-in treatment, thus ensuring a higher degree of reliability of the product.

Claims (8)

1. An apparatus for functional testing and for determining the caracteristics of EPROM type semiconductor devices during a burn-in heat treatment, comprising means for erasing the EPROM by U.V. light irradiation of the devices, means for programming the EPROMs means for verifying the programming of the EPROMs means for performing the burn-in of the programmed devices, means for verifying the retention of the programmed data, means for measuring parametric (DC) and dynamic (TAC) character­istics of the devices and means for classifying and handling the single devices,
    characterized by the fact that it comprises essentially:
a) at least a burn-in chamber provided, on at least a wall thereof, with a plurality of slots having automatic closing means and capable of receiving a card;
b) a plurality of cards for mounting the devices to be tested, each card comprising a first part provided with a plurality of parallely connected sockets for plugging in the devices and a second part containing a microprocessor, a coupling body fitting into said slots being present between said first part and second part of the card, said second part of the cards remaining outside said chamber upon insertion of the card into one of said slots;
c) a plurality of cards containing at least one U.V. lamp, each of said cards comprising a first part provided with at least one U.V. lamp and a second part containing switching and supply means for said lamp, a coupling body suitably fitting into said slots being present between said two parts of the card, the second part of the card remaining outside said chamber upon insertion of the card into one of said slots;
d) a system's central processing unit (CPU) interfaced with the microprocessor of each of said cards for mounting the devices and with the switching means of each of said cards containing at least a U.V. lamp;
each of said U.V. lamps containing cards being functionally interposed between two cards of devices;
    said microprocessors determining the performance of the following operations upon the devices: programming, verification of the programming, verification of retention of programmed data, classification of devices in terms of quality and identification of the devices under control of the system's central processing unit which coordinates the switching of said U.V. lamps for erasing operations.
2. The apparatus according to claim 1, wherein said slots for inserting said cards are defined through a wall of said burn-in chamber by a frame of insulating material having a central opening with a substantially rectangular cross section and tapered across the thickness of the wall of the chamber to form a port having a rectangular base, truncated pyramid port with the major base of the truncated pyramid corresponding with the external surface of said wall.
3. The apparatus according to claim 2, wherein said slots are provided with individual automatic means for closing the central opening of the slot in absence of a card inserted into the slot itself.
4. The apparatus according to claim 1, wherein said cards are provided with a central coupling body shaped as a truncated pyramid plug and matching with the shape of said central opening of said slots.
5. The apparatus according to claim 1, wherein said microprocessor housed in the part of said cards for assembling the devices to be tested remaining outside the burn-in chamber upon insertion of the card into one of said slots, comprises a control unit, a read-only memory, a random access memory and input and output interfacing stages.
6. The apparatus according to claim 1, wherein said cards for mounting the devices are inserted inside the burn-in chamber through the slots of a front wall of said chamber and said cards carrying U.V. lamps are inserted inside the burn-in chamber through the slots of a back wall of said chamber.
7. A process for functional testing and for determining the characteristics of EPROM type semiconductor devices during a burn-in treatment,
    characterized by the following steps:
A) programming an "all 0" pattern the cells of the EPROM devices as received from the assembly lines;
B) loading of the devices into tubes and storing at a temperature equal to or greater than 170°C for at least 72 hours;
C) automatic loading of single devices from said tubes on cards provided with suitable sockets; verification of the validity of the data programmed during step A) and automatic rejection of nonvalidated devices;
D) dynamic burn-in treatment at a temperature equal to or greater than 125°C carried out in a burn-in chamber and subjecting the devices plugged into said sockets of said cards to the following tests:
i) verification of the "0" status of all the EPROM cells;
ii) erasing;
iii) programming of a test pattern;
iv) verification of the test pattern;
v) repetition of steps ii), iii) and iv) for a "n"' number of different test patterns;
vi) classification of the single devices according to particular quality classes;
vii) programming of a special pattern for subsequent testing;
E) automatic unplugging of the devices from the sockets of said cards and their classification by automatic insertion of the devices into classified tubes in accordance with particular quality grades;
F) testing of dynamic (TAC) parameters of the devices and further classification of devices in function of the determined individual dynamic characteristics;
G) stamping of the devices and final erasing of the data still present in the memory cells.
EP87830271A 1986-07-22 1987-07-15 Method and apparatus for testing eprom type semiconductor devices during burn-in Expired - Lifetime EP0254691B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT83633/86A IT1201837B (en) 1986-07-22 1986-07-22 SYSTEM FOR VERIFYING THE FUNCTIONALITY AND CHARACTERISTICS OF SEMICONDUCTOR-TYPE EPROM DEVICES DURING THE "BURN-IN"
IT8363386 1986-07-22

Publications (3)

Publication Number Publication Date
EP0254691A2 true EP0254691A2 (en) 1988-01-27
EP0254691A3 EP0254691A3 (en) 1990-02-14
EP0254691B1 EP0254691B1 (en) 1993-06-16

Family

ID=11323439

Family Applications (1)

Application Number Title Priority Date Filing Date
EP87830271A Expired - Lifetime EP0254691B1 (en) 1986-07-22 1987-07-15 Method and apparatus for testing eprom type semiconductor devices during burn-in

Country Status (5)

Country Link
US (2) US4799021A (en)
EP (1) EP0254691B1 (en)
JP (1) JP2615058B2 (en)
DE (1) DE3786203T2 (en)
IT (1) IT1201837B (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0333160A2 (en) * 1988-03-15 1989-09-20 Furukawa Denki Kogyo Kabushiki Kaisha Laminated board for testing electronic components
EP0407029A2 (en) * 1989-06-06 1991-01-09 Hewlett-Packard Company Method for a below a minute burn-in
EP0611968A1 (en) * 1993-02-10 1994-08-24 Siemens Schweiz AG Apparatus for testing modules
EP0620524A2 (en) * 1993-03-12 1994-10-19 Texas Instruments Incorporated Improvements in or relating to memories and their manufacture
CN104062471A (en) * 2014-06-30 2014-09-24 深圳市迈昂科技有限公司 Lamp aging shelf, aging method and aging system

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03146884A (en) * 1989-11-02 1991-06-21 Mitsubishi Electric Corp Burn-in device
US4985988A (en) * 1989-11-03 1991-01-22 Motorola, Inc. Method for assembling, testing, and packaging integrated circuits
JP2830269B2 (en) * 1990-01-12 1998-12-02 ソニー株式会社 Disk unit
US5086271A (en) * 1990-01-12 1992-02-04 Reliability Incorporated Driver system and distributed transmission line network for driving devices under test
US5200885A (en) * 1990-04-26 1993-04-06 Micro Control Company Double burn-in board assembly
US5157829A (en) * 1990-10-02 1992-10-27 Outboard Marine Corporation Method of burn-in testing of circuitry
JP2746763B2 (en) * 1991-02-18 1998-05-06 シャープ株式会社 Burn-in apparatus and burn-in method using the same
US5265099A (en) * 1991-02-28 1993-11-23 Feinstein David Y Method for heating dynamic memory units whereby
US5315598A (en) * 1991-04-04 1994-05-24 Texas Instruments Incorporated Method to reduce burn-in time and inducing infant failure
JP2862154B2 (en) * 1991-07-22 1999-02-24 富士通株式会社 Burn-in device
US5391984A (en) * 1991-11-01 1995-02-21 Sgs-Thomson Microelectronics, Inc. Method and apparatus for testing integrated circuit devices
US5353254A (en) * 1992-05-21 1994-10-04 Texas Instruments Incorporated Semiconductor memory device having burn-in test circuit
US5390129A (en) * 1992-07-06 1995-02-14 Motay Electronics, Inc. Universal burn-in driver system and method therefor
US5339028A (en) * 1992-07-23 1994-08-16 Texas Instruments Incorporated Test circuit for screening parts
US5402078A (en) * 1992-10-13 1995-03-28 Micro Control Company Interconnection system for burn-in boards
US5375091A (en) * 1993-12-08 1994-12-20 International Business Machines Corporation Method and apparatus for memory dynamic burn-in and test
US5528161A (en) * 1994-09-15 1996-06-18 Venturedyne Limited Through-port load carrier and related test apparatus
US5538141A (en) * 1994-09-27 1996-07-23 Intel Corporation Test flow assurance using memory imprinting
US5724365A (en) * 1996-05-24 1998-03-03 Advanced Micro Devices, Inc. Method of utilizing redundancy testing to substitute for main array programming and AC speed reads
US5927512A (en) * 1997-01-17 1999-07-27 Micron Technology, Inc. Method for sorting integrated circuit devices
US6100486A (en) * 1998-08-13 2000-08-08 Micron Technology, Inc. Method for sorting integrated circuit devices
US5844803A (en) 1997-02-17 1998-12-01 Micron Technology, Inc. Method of sorting a group of integrated circuit devices for those devices requiring special testing
US5915231A (en) 1997-02-26 1999-06-22 Micron Technology, Inc. Method in an integrated circuit (IC) manufacturing process for identifying and redirecting IC's mis-processed during their manufacture
US5856923A (en) * 1997-03-24 1999-01-05 Micron Technology, Inc. Method for continuous, non lot-based integrated circuit manufacturing
US5883844A (en) * 1997-05-23 1999-03-16 Stmicroelectronics, Inc. Method of stress testing integrated circuit having memory and integrated circuit having stress tester for memory thereof
US7120513B1 (en) 1997-06-06 2006-10-10 Micron Technology, Inc. Method for using data regarding manufacturing procedures integrated circuits (ICS) have undergone, such as repairs, to select procedures the ICS will undergo, such as additional repairs
US5907492A (en) * 1997-06-06 1999-05-25 Micron Technology, Inc. Method for using data regarding manufacturing procedures integrated circuits (IC's) have undergone, such as repairs, to select procedures the IC's will undergo, such as additional repairs
US5940466A (en) * 1997-10-29 1999-08-17 Micron Electronics, Inc. Apparatus for counting parts in a tray
US5996996A (en) * 1998-02-20 1999-12-07 Micron Electronics, Inc. Method of sorting computer chips
US6049624A (en) 1998-02-20 2000-04-11 Micron Technology, Inc. Non-lot based method for assembling integrated circuit devices
US5998751A (en) * 1998-02-20 1999-12-07 Micron Electronics, Inc. Sorting system for computer chips
US6512392B2 (en) * 1998-04-17 2003-01-28 International Business Machines Corporation Method for testing semiconductor devices
US6137301A (en) * 1998-05-11 2000-10-24 Vanguard International Semiconductor Company EPROM used as a voltage monitor for semiconductor burn-in
KR100269948B1 (en) * 1998-08-07 2000-10-16 윤종용 Apparatus for inserting/removing and auto sorting semiconductor devices in a semiconductor burn-in process
US6563070B2 (en) 1999-03-30 2003-05-13 Micron Technology, Inc. Enhanced grading and sorting of semiconductor devices using modular “plug-in” sort algorithms
US6307388B1 (en) * 2000-02-23 2001-10-23 Unisys Corporation Electromechanical apparatus for testing IC chips using first and second sets of substrates which are pressed together
DE10036177C2 (en) 2000-07-25 2002-07-11 Infineon Technologies Ag Method for testing semiconductor devices
DE10115280C2 (en) * 2001-03-28 2003-12-24 Infineon Technologies Ag Method for classifying components
WO2007095974A1 (en) * 2006-02-24 2007-08-30 Freescale Semiconductor, Inc. Testing non-volatile memory devices for charge leakage
WO2010005747A2 (en) * 2008-06-16 2010-01-14 Data I/O Corporation Programmer actuator system and method of operation thereof
JP6274127B2 (en) * 2015-02-24 2018-02-07 株式会社Jvcケンウッド Evaluation system, evaluation method, and evaluation program for nonvolatile semiconductor memory device
JP6274128B2 (en) * 2015-02-24 2018-02-07 株式会社Jvcケンウッド Evaluation method, evaluation system, and evaluation program for nonvolatile semiconductor memory device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121698A (en) * 1982-12-21 1984-07-13 Fujitsu Ltd Testing method of erasable read-only memory element
JPS60145667A (en) * 1984-01-09 1985-08-01 Mitsubishi Electric Corp Testing method for ultraviolet ray irradiation erase type nonvolatile memory
GB2168802A (en) * 1984-10-06 1986-06-25 David Nicholas Young Heating oven

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969618A (en) * 1974-11-29 1976-07-13 Xerox Corporation On line PROM handling system
NL7416755A (en) * 1974-12-23 1976-06-25 Philips Nv METHOD AND DEVICE FOR TESTING A DIGITAL MEMORY.
US4379259A (en) * 1980-03-12 1983-04-05 National Semiconductor Corporation Process of performing burn-in and parallel functional testing of integrated circuit memories in an environmental chamber
JPS5853775A (en) * 1981-09-26 1983-03-30 Fujitsu Ltd Testing of ic memory
US4636726A (en) * 1982-01-04 1987-01-13 Artronics Corporation Electronic burn-in system
US4578751A (en) * 1982-06-25 1986-03-25 At&T Technologies, Inc. System for simultaneously programming a number of EPROMs
DE8424493U1 (en) * 1984-08-16 1985-08-08 Brumm GmbH Elektronik-Gerätebau, 1000 Berlin Test adapter
FR2570232A1 (en) * 1984-09-11 1986-03-14 Thomson Csf RUNNING SEQUENCE TRANSLATION SEQUENCE DEVICE FOR LOGIC AND / OR DIGITAL CIRCUIT, LOGIC AND / OR DIGITAL CIRCUIT RODING METHOD, AND LOGIC AND / OR DIGITAL CIRCUIT RODING DEVICE
GB8425299D0 (en) * 1984-10-06 1984-11-14 Young D N Heating oven
US4713611A (en) * 1986-06-23 1987-12-15 Vtc Incorporated Burn-in apparatus for integrated circuits mounted on a carrier tape

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121698A (en) * 1982-12-21 1984-07-13 Fujitsu Ltd Testing method of erasable read-only memory element
JPS60145667A (en) * 1984-01-09 1985-08-01 Mitsubishi Electric Corp Testing method for ultraviolet ray irradiation erase type nonvolatile memory
GB2168802A (en) * 1984-10-06 1986-06-25 David Nicholas Young Heating oven

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLTEIN, vol. 14, no. 3, August 1971, page 737, New York, US et al.; S.I. BRUDER: "Carrier card assembly for component aging" *
IEEE - 1982 INTERNATIONAL TEST COFERENCE, 15th-18th November 1982, paper 10.6, pages 258-260, IEEE, New York, US; C.E. SHALVOY: "Testing during burn-in: economical alternative for testing memories" *
PATENT ABSTRACTS OF JAPAN, vol. 8, no. 248 (P-313)[1685], 17th November 1984; & JP-A-59 121 698 (FUJITSU K.K.) 13-07-1984 *
PATENT ABSTRACTS OF JAPAN, vol. 9, no. 310 (E-364)[2033], 6th December 1985; & JP-A-60 145 667 (MITSUBISHI DENKI K.K.) 01-08-1985 *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0333160A2 (en) * 1988-03-15 1989-09-20 Furukawa Denki Kogyo Kabushiki Kaisha Laminated board for testing electronic components
EP0333160A3 (en) * 1988-03-15 1991-10-09 Furukawa Denki Kogyo Kabushiki Kaisha Laminated board for testing electronic components
EP0407029A2 (en) * 1989-06-06 1991-01-09 Hewlett-Packard Company Method for a below a minute burn-in
EP0407029B1 (en) * 1989-06-06 1995-06-28 Hewlett-Packard Company Method for a below a minute burn-in
EP0611968A1 (en) * 1993-02-10 1994-08-24 Siemens Schweiz AG Apparatus for testing modules
US5450018A (en) * 1993-02-10 1995-09-12 Sieba Ag Device for testing electrical modules
EP0620524A2 (en) * 1993-03-12 1994-10-19 Texas Instruments Incorporated Improvements in or relating to memories and their manufacture
EP0620524A3 (en) * 1993-03-12 1998-08-12 Texas Instruments Incorporated Improvements in or relating to memories and their manufacture
CN104062471A (en) * 2014-06-30 2014-09-24 深圳市迈昂科技有限公司 Lamp aging shelf, aging method and aging system
CN104062471B (en) * 2014-06-30 2017-01-18 深圳市迈昂科技有限公司 Lamp aging shelf, aging method and aging monitoring system

Also Published As

Publication number Publication date
IT8683633A0 (en) 1986-07-22
DE3786203T2 (en) 1993-09-23
IT1201837B (en) 1989-02-02
JPS6352073A (en) 1988-03-05
EP0254691A3 (en) 1990-02-14
US4871963A (en) 1989-10-03
JP2615058B2 (en) 1997-05-28
DE3786203D1 (en) 1993-07-22
EP0254691B1 (en) 1993-06-16
US4799021A (en) 1989-01-17

Similar Documents

Publication Publication Date Title
US4799021A (en) Method and apparatus for testing EPROM type semiconductor devices during burn-in
US4379259A (en) Process of performing burn-in and parallel functional testing of integrated circuit memories in an environmental chamber
US6433569B1 (en) Apparatus for testing an integrated circuit in an oven during burn-in
US5603412A (en) Apparatus and semiconductor component for assuring test flow compliance
US9275187B2 (en) Programmable test chip, system and method for characterization of integrated circuit fabrication processes
MY111843A (en) Automatic testing system and method for semiconductor devices
US6857090B2 (en) System and method for automatically analyzing and managing loss factors in test process of semiconductor integrated circuit devices
US6981179B1 (en) Microcomputer having built-in nonvolatile memory and check system thereof and IC card packing microcomputer having built-in nonvolatile memory and check system thereof
US5036488A (en) Automatic programming and erasing device for electrically erasable programmable read-only memories
US6160517A (en) Method and apparatus for testing electronic systems using electromagnetic emissions profiles
JPS63274885A (en) Method of testing semiconductor integrated circuit during burn-in and circuit substrate
EP0272848A2 (en) Semiconductor device having programmable read only memory cells for specific mode
US6922050B2 (en) Method for testing a remnant batch of semiconductor devices
CN106920577A (en) The detection method of memory chip, detection means and detecting system
US7159157B2 (en) Apparatus and method for testing a device for storing data
US20070126447A1 (en) Testing apparatus and method
JPH06338200A (en) Method and device for inspecting electrical characteristic of semiconductor storage device
JP2533174B2 (en) Parts testing equipment
KR19990050848A (en) Monitoring Burn-in Testing and Methods
JPH081455B2 (en) IC performance test method
JPH076600A (en) Method and device for inspecting electric characteristic of semiconductor storage
US6788047B1 (en) DUT board for eliminating electrostatic discharge damage
JPH0722477A (en) Semiconductor integrated circuit measuring device
JP2002207062A (en) Method for obtaining electrical characteristic correlation of socket in electronic part-testing apparatus, handler, method for controlling handler and electronic part-testing apparatus
US6584553B2 (en) Method and system for sequentially programming memory-containing integrated circuits

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE FR GB NL

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: SGS-THOMSON MICROELECTRONICS S.R.L.

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

RHK1 Main classification (correction)

Ipc: G11C 29/00

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): DE FR GB NL

17P Request for examination filed

Effective date: 19900511

17Q First examination report despatched

Effective date: 19920214

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB NL

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Effective date: 19930616

REF Corresponds to:

Ref document number: 3786203

Country of ref document: DE

Date of ref document: 19930722

ET Fr: translation filed
NLV1 Nl: lapsed or annulled due to failure to fulfill the requirements of art. 29p and 29m of the patents act
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
REG Reference to a national code

Ref country code: FR

Ref legal event code: D6

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20000710

Year of fee payment: 14

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20000711

Year of fee payment: 14

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20000713

Year of fee payment: 14

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20010715

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20010715

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20020329

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20020501

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST