EP0631325A3 - Semiconductor device with an oriented non single crystal silicon thin film and method for its preparation. - Google Patents

Semiconductor device with an oriented non single crystal silicon thin film and method for its preparation. Download PDF

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Publication number
EP0631325A3
EP0631325A3 EP94304663A EP94304663A EP0631325A3 EP 0631325 A3 EP0631325 A3 EP 0631325A3 EP 94304663 A EP94304663 A EP 94304663A EP 94304663 A EP94304663 A EP 94304663A EP 0631325 A3 EP0631325 A3 EP 0631325A3
Authority
EP
European Patent Office
Prior art keywords
preparation
thin film
semiconductor device
single crystal
crystal silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP94304663A
Other languages
German (de)
French (fr)
Other versions
EP0631325A2 (en
EP0631325B1 (en
Inventor
Hongyong Zhang
Toru Takayama
Yasuhiko Takemura
Akiharu Miyanaga
Hisashi Ohtani
Junichi Takeyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to EP00201134A priority Critical patent/EP1026751A3/en
Priority to EP00201135A priority patent/EP1026752B1/en
Publication of EP0631325A2 publication Critical patent/EP0631325A2/en
Publication of EP0631325A3 publication Critical patent/EP0631325A3/en
Application granted granted Critical
Publication of EP0631325B1 publication Critical patent/EP0631325B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
EP94304663A 1993-06-25 1994-06-27 Semiconductor device with an oriented non single crystal silicon thin film and method for its preparation Expired - Lifetime EP0631325B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP00201134A EP1026751A3 (en) 1993-06-25 1994-06-27 Semiconductor device and method for its preparation
EP00201135A EP1026752B1 (en) 1993-06-25 1994-06-27 Method for preparation of a semiconductor device

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP18075293 1993-06-25
JP18075293 1993-06-25
JP180752/93 1993-06-25
JP36616/94 1994-02-08
JP3661694 1994-02-08
JP3661694 1994-02-08

Related Child Applications (2)

Application Number Title Priority Date Filing Date
EP00201135A Division EP1026752B1 (en) 1993-06-25 1994-06-27 Method for preparation of a semiconductor device
EP00201134A Division EP1026751A3 (en) 1993-06-25 1994-06-27 Semiconductor device and method for its preparation

Publications (3)

Publication Number Publication Date
EP0631325A2 EP0631325A2 (en) 1994-12-28
EP0631325A3 true EP0631325A3 (en) 1996-12-18
EP0631325B1 EP0631325B1 (en) 2003-05-07

Family

ID=26375695

Family Applications (3)

Application Number Title Priority Date Filing Date
EP00201134A Withdrawn EP1026751A3 (en) 1993-06-25 1994-06-27 Semiconductor device and method for its preparation
EP94304663A Expired - Lifetime EP0631325B1 (en) 1993-06-25 1994-06-27 Semiconductor device with an oriented non single crystal silicon thin film and method for its preparation
EP00201135A Expired - Lifetime EP1026752B1 (en) 1993-06-25 1994-06-27 Method for preparation of a semiconductor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP00201134A Withdrawn EP1026751A3 (en) 1993-06-25 1994-06-27 Semiconductor device and method for its preparation

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP00201135A Expired - Lifetime EP1026752B1 (en) 1993-06-25 1994-06-27 Method for preparation of a semiconductor device

Country Status (6)

Country Link
US (1) US5882960A (en)
EP (3) EP1026751A3 (en)
KR (2) KR100299721B1 (en)
CN (4) CN1055786C (en)
DE (2) DE69435114D1 (en)
TW (1) TW295703B (en)

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JP3645380B2 (en) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device, information terminal, head mounted display, navigation system, mobile phone, video camera, projection display device
JP3729955B2 (en) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP3645379B2 (en) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US5985740A (en) 1996-01-19 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device including reduction of a catalyst
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3645378B2 (en) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US5888858A (en) 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6180439B1 (en) * 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US7056381B1 (en) * 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6465287B1 (en) 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
TW374196B (en) * 1996-02-23 1999-11-11 Semiconductor Energy Lab Co Ltd Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same
TW335503B (en) 1996-02-23 1998-07-01 Semiconductor Energy Lab Kk Semiconductor thin film and manufacturing method and semiconductor device and its manufacturing method
US5792700A (en) * 1996-05-31 1998-08-11 Micron Technology, Inc. Semiconductor processing method for providing large grain polysilicon films
JPH09321310A (en) * 1996-05-31 1997-12-12 Sanyo Electric Co Ltd Manufacture of semiconductor device
TW451284B (en) 1996-10-15 2001-08-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP3630894B2 (en) 1996-12-24 2005-03-23 株式会社半導体エネルギー研究所 Charge transfer semiconductor device, manufacturing method thereof, and image sensor
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JP3544280B2 (en) 1997-03-27 2004-07-21 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
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US6593592B1 (en) * 1999-01-29 2003-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having thin film transistors
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US6548370B1 (en) * 1999-08-18 2003-04-15 Semiconductor Energy Laboratory Co., Ltd. Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces
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Also Published As

Publication number Publication date
TW295703B (en) 1997-01-11
CN1267907A (en) 2000-09-27
EP0631325A2 (en) 1994-12-28
CN1222752A (en) 1999-07-14
KR100299721B1 (en) 2001-12-15
CN1155991C (en) 2004-06-30
EP1026751A2 (en) 2000-08-09
EP0631325B1 (en) 2003-05-07
CN1100562A (en) 1995-03-22
EP1026751A3 (en) 2002-11-20
KR100306834B1 (en) 2004-02-11
DE69432615D1 (en) 2003-06-12
KR19990055848A (en) 1999-07-15
CN1055786C (en) 2000-08-23
US5882960A (en) 1999-03-16
CN1208807C (en) 2005-06-29
DE69432615T2 (en) 2004-02-19
KR950002076A (en) 1995-01-04
EP1026752B1 (en) 2008-07-09
DE69435114D1 (en) 2008-08-21
EP1026752A3 (en) 2002-11-20
CN1267902A (en) 2000-09-27
EP1026752A2 (en) 2000-08-09
CN1161831C (en) 2004-08-11

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