EP0853818A4 - Low voltage short channel trench dmos transistor - Google Patents

Low voltage short channel trench dmos transistor

Info

Publication number
EP0853818A4
EP0853818A4 EP96927387A EP96927387A EP0853818A4 EP 0853818 A4 EP0853818 A4 EP 0853818A4 EP 96927387 A EP96927387 A EP 96927387A EP 96927387 A EP96927387 A EP 96927387A EP 0853818 A4 EP0853818 A4 EP 0853818A4
Authority
EP
European Patent Office
Prior art keywords
low voltage
short channel
dmos transistor
channel trench
trench dmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP96927387A
Other languages
German (de)
French (fr)
Other versions
EP0853818A1 (en
Inventor
Dorman C Pitzer
Fwu-Iuan Hshieh
Mike F Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Publication of EP0853818A1 publication Critical patent/EP0853818A1/en
Publication of EP0853818A4 publication Critical patent/EP0853818A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
EP96927387A 1995-08-21 1996-08-15 Low voltage short channel trench dmos transistor Withdrawn EP0853818A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US53715695A 1995-08-21 1995-08-21
US537156 1995-08-21
PCT/US1996/013039 WO1997007548A1 (en) 1995-08-21 1996-08-15 Low voltage short channel trench dmos transistor

Publications (2)

Publication Number Publication Date
EP0853818A1 EP0853818A1 (en) 1998-07-22
EP0853818A4 true EP0853818A4 (en) 1998-11-11

Family

ID=24141458

Family Applications (1)

Application Number Title Priority Date Filing Date
EP96927387A Withdrawn EP0853818A4 (en) 1995-08-21 1996-08-15 Low voltage short channel trench dmos transistor

Country Status (3)

Country Link
EP (1) EP0853818A4 (en)
AU (1) AU6722396A (en)
WO (1) WO1997007548A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429481B1 (en) * 1997-11-14 2002-08-06 Fairchild Semiconductor Corporation Field effect transistor and method of its manufacture
DE19935442C1 (en) 1999-07-28 2000-12-21 Siemens Ag Power trench-metal oxide semiconductor transistor is produced using a temporary layer to allow formation of a trench insulating film which is thicker at the trench lower end than at the trench upper end
DE10009345C1 (en) * 2000-02-28 2001-07-19 Infineon Technologies Ag Field effect transistor device with trench-shaped gate electrode
US6312993B1 (en) * 2000-02-29 2001-11-06 General Semiconductor, Inc. High speed trench DMOS
US6921939B2 (en) * 2000-07-20 2005-07-26 Fairchild Semiconductor Corporation Power MOSFET and method for forming same using a self-aligned body implant
JP4813762B2 (en) * 2003-12-25 2011-11-09 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
US8698232B2 (en) 2010-01-04 2014-04-15 International Rectifier Corporation Semiconductor device including a voltage controlled termination structure and method for fabricating same

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5674960A (en) * 1979-11-22 1981-06-20 Toshiba Corp Semiconductor integrated circuit
US4369564A (en) * 1979-10-29 1983-01-25 American Microsystems, Inc. VMOS Memory cell and method for making same
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
US4814839A (en) * 1977-01-11 1989-03-21 Zaidan Hojin Handotai Kenkyu Shinkokai Insulated gate static induction transistor and integrated circuit including same
US5021845A (en) * 1985-08-30 1991-06-04 Texas Instruments Incorporated Semiconductor device and process fabrication thereof
US5298780A (en) * 1992-02-17 1994-03-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of fabricating same
US5385853A (en) * 1992-12-02 1995-01-31 International Business Machines Corporation Method of fabricating a metal oxide semiconductor heterojunction field effect transistor (MOSHFET)
EP0717450A2 (en) * 1994-12-13 1996-06-19 Mitsubishi Denki Kabushiki Kaisha Vertiacal insulated gate semiconductor device and method of manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL184551C (en) * 1978-07-24 1989-08-16 Philips Nv FIELD-EFFECT TRANSISTOR WITH INSULATED HANDLEBAR ELECTRODE.
US5910669A (en) * 1992-07-24 1999-06-08 Siliconix Incorporated Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof
US5341011A (en) * 1993-03-15 1994-08-23 Siliconix Incorporated Short channel trenched DMOS transistor

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4814839A (en) * 1977-01-11 1989-03-21 Zaidan Hojin Handotai Kenkyu Shinkokai Insulated gate static induction transistor and integrated circuit including same
US4369564A (en) * 1979-10-29 1983-01-25 American Microsystems, Inc. VMOS Memory cell and method for making same
JPS5674960A (en) * 1979-11-22 1981-06-20 Toshiba Corp Semiconductor integrated circuit
US5021845A (en) * 1985-08-30 1991-06-04 Texas Instruments Incorporated Semiconductor device and process fabrication thereof
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
US5298780A (en) * 1992-02-17 1994-03-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of fabricating same
US5385853A (en) * 1992-12-02 1995-01-31 International Business Machines Corporation Method of fabricating a metal oxide semiconductor heterojunction field effect transistor (MOSHFET)
EP0717450A2 (en) * 1994-12-13 1996-06-19 Mitsubishi Denki Kabushiki Kaisha Vertiacal insulated gate semiconductor device and method of manufacturing the same

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 005, no. 141 (E - 073) 5 September 1981 (1981-09-05) *
See also references of WO9707548A1 *

Also Published As

Publication number Publication date
EP0853818A1 (en) 1998-07-22
WO1997007548A1 (en) 1997-02-27
AU6722396A (en) 1997-03-12

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Legal Events

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PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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Withdrawal date: 19981216