EP0957420A3 - Clamping circuit - Google Patents

Clamping circuit Download PDF

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Publication number
EP0957420A3
EP0957420A3 EP99109644A EP99109644A EP0957420A3 EP 0957420 A3 EP0957420 A3 EP 0957420A3 EP 99109644 A EP99109644 A EP 99109644A EP 99109644 A EP99109644 A EP 99109644A EP 0957420 A3 EP0957420 A3 EP 0957420A3
Authority
EP
European Patent Office
Prior art keywords
clamping
circuit
normal operation
voltage
input signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP99109644A
Other languages
German (de)
French (fr)
Other versions
EP0957420B1 (en
EP0957420A2 (en
Inventor
Martin Feldtkeller
Harald Koffler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0957420A2 publication Critical patent/EP0957420A2/en
Publication of EP0957420A3 publication Critical patent/EP0957420A3/en
Application granted granted Critical
Publication of EP0957420B1 publication Critical patent/EP0957420B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/227—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the supply voltage
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/267—Current mirrors using both bipolar and field-effect technology

Abstract

Es wird eine Klemmschaltung beschrieben, mit der verhindert wird, daß ein an einem Eingangspfad (Vp) anliegendes Eingangssignal negatives Potential annehmen kann. Die Schaltung zeichnet sich durch eine hohe Spannungsfestigkeit bei genauer Einhaltung der Klemmspannung und gleichzeitig eine geringe Stromaufnahme im Normalbetrieb aus. Die Klemmschaltung umfaßt kreuzgekoppelte erste und zweite Transistoren (T1, T2) und ist von einem Normalbetrieb in einen Klemmbetrieb umschaltbar, wenn die Spannung des Eingangssignals unter eine vorbestimmte Klemmspannung, vorzugsweise 0V, abfällt. Hierzu ist ein dritter Transistor (M3) vorgesehen, der so in den Eingangspfad (Vp) geschaltet ist, daß er sich in dem Klemmbetrieb der Schaltung in rückwärts leitendem Zustand und in dem Normalbetrieb in vorwärts gesperrtem Zustand befindet.

Figure 00000001
A clamping circuit is described with which it is prevented that an input signal present on an input path (Vp) can assume negative potential. The circuit is characterized by a high dielectric strength with precise adherence to the clamping voltage and at the same time a low current consumption in normal operation. The clamping circuit comprises cross-coupled first and second transistors (T1, T2) and can be switched from normal operation to clamping operation if the voltage of the input signal drops below a predetermined clamping voltage, preferably 0V. For this purpose, a third transistor (M3) is provided, which is connected to the input path (Vp) in such a way that it is in the reverse conducting state in the clamping operation of the circuit and in the forward blocked state in normal operation.
Figure 00000001
EP99109644A 1998-05-15 1999-05-14 Clamping circuit Expired - Lifetime EP0957420B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19821906A DE19821906C1 (en) 1998-05-15 1998-05-15 Clamping circuit
DE19821906 1998-05-15

Publications (3)

Publication Number Publication Date
EP0957420A2 EP0957420A2 (en) 1999-11-17
EP0957420A3 true EP0957420A3 (en) 2000-03-29
EP0957420B1 EP0957420B1 (en) 2003-04-16

Family

ID=7867934

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99109644A Expired - Lifetime EP0957420B1 (en) 1998-05-15 1999-05-14 Clamping circuit

Country Status (3)

Country Link
US (1) US6137278A (en)
EP (1) EP0957420B1 (en)
DE (2) DE19821906C1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7242240B2 (en) * 2005-05-05 2007-07-10 Agere Systems, Inc. Low noise bandgap circuit
US20090121770A1 (en) 2007-03-29 2009-05-14 Linear Technology Corporation Method for clamping a semiconductor region at or near ground
JP4553395B2 (en) * 2007-06-15 2010-09-29 シャープ株式会社 Oscilloscope and semiconductor evaluation apparatus using the same
WO2011135094A1 (en) * 2010-04-30 2011-11-03 Katholieke Universiteit Leuven Voltage clamping circuit and use thereof
US20130027117A1 (en) * 2011-07-28 2013-01-31 Anadyne, Inc. Precision voltage clamp with very low temperature drift
CN109474246B (en) * 2018-10-31 2022-06-28 西安微电子技术研究所 Voltage clamping protection structure and operational amplifier input stage structure
CN111208401B (en) * 2018-11-22 2023-01-31 宁波飞芯电子科技有限公司 Test method and device for clamping photodiode
CN112152189B (en) * 2020-09-15 2023-01-31 广东省大湾区集成电路与系统应用研究院 Clamping circuit and electronic equipment

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4764897A (en) * 1985-09-30 1988-08-16 Kabushiki Kaisha Toshiba Semiconductor memory device employing normally-on type GaAs-MESFET transfer gates
US5436552A (en) * 1992-09-22 1995-07-25 Mitsubishi Denki Kabushiki Kaisha Clamping circuit for clamping a reference voltage at a predetermined level
US5614850A (en) * 1994-12-09 1997-03-25 Texas Instruments Incorporated Current sensing circuit and method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3703711A (en) * 1971-01-04 1972-11-21 Honeywell Inf Systems Memory cell with voltage limiting at transistor control terminals
US3930172A (en) * 1974-11-06 1975-12-30 Nat Semiconductor Corp Input supply independent circuit
GB2189954B (en) * 1986-04-30 1989-12-20 Plessey Co Plc Improvements relating to memory cell devices
US4926073A (en) * 1989-05-01 1990-05-15 Motorola Inc. Negative voltage clamp
KR950005577B1 (en) * 1992-12-30 1995-05-25 현대전자산업주식회사 Bit line load circuit
FR2718259A1 (en) * 1994-03-30 1995-10-06 Philips Composants Regulator circuit providing a voltage independent of the power supply and the temperature.
US5519341A (en) * 1994-12-02 1996-05-21 Texas Instruments Incorporated Cross coupled quad comparator for current sensing independent of temperature

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4764897A (en) * 1985-09-30 1988-08-16 Kabushiki Kaisha Toshiba Semiconductor memory device employing normally-on type GaAs-MESFET transfer gates
US5436552A (en) * 1992-09-22 1995-07-25 Mitsubishi Denki Kabushiki Kaisha Clamping circuit for clamping a reference voltage at a predetermined level
US5614850A (en) * 1994-12-09 1997-03-25 Texas Instruments Incorporated Current sensing circuit and method

Also Published As

Publication number Publication date
EP0957420B1 (en) 2003-04-16
US6137278A (en) 2000-10-24
EP0957420A2 (en) 1999-11-17
DE19821906C1 (en) 2000-03-02
DE59905031D1 (en) 2003-05-22

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