EP1008175A4 - Capped interlayer dielectric for chemical mechanical polishing - Google Patents

Capped interlayer dielectric for chemical mechanical polishing

Info

Publication number: EP1008175A4
Authority: EP; European Patent Office
Prior art keywords: capped; mechanical polishing; chemical mechanical; interlayer dielectric; interlayer
Prior art date: 1995-09-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

EP96933088A

Other languages

German (de)

French (fr)

Other versions

EP1008175A1 (en

Inventor

Peng Bai

Kenneth C Cadien

Lie-Yea Cheng

Matthew J Prince

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Intel Corp

Original Assignee

Intel Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1995-09-29

Filing date

1996-09-23

Publication date

2000-10-18

1996-09-23 Application filed by Intel Corp filed Critical Intel Corp

2000-06-14 Publication of EP1008175A1 publication Critical patent/EP1008175A1/en

2000-10-18 Publication of EP1008175A4 publication Critical patent/EP1008175A4/en

Status Withdrawn legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment

EP96933088A 1995-09-29 1996-09-23 Capped interlayer dielectric for chemical mechanical polishing Withdrawn EP1008175A4 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US53600795A	1995-09-29	1995-09-29
US536007		1995-09-29
PCT/US1996/015201 WO1997012393A1 (en)	1995-09-29	1996-09-23	Capped interlayer dielectric for chemical mechanical polishing

Publications (2)

Publication Number	Publication Date
EP1008175A1 EP1008175A1 (en)	2000-06-14
EP1008175A4 true EP1008175A4 (en)	2000-10-18

Family

ID=24136721

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP96933088A Withdrawn EP1008175A4 (en)	1995-09-29	1996-09-23	Capped interlayer dielectric for chemical mechanical polishing

Country Status (8)

Country	Link
EP (1)	EP1008175A4 (en)
JP (1)	JPH11512877A (en)
KR (1)	KR19990063743A (en)
CN (1)	CN1203697A (en)
AU (1)	AU7164596A (en)
IL (1)	IL123749A0 (en)
TW (1)	TW304297B (en)
WO (1)	WO1997012393A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6153935A (en) *	1999-09-30	2000-11-28	International Business Machines Corporation	Dual etch stop/diffusion barrier for damascene interconnects
US7316972B2 (en)	2002-08-30	2008-01-08	Matsushita Electric Industrial Co., Ltd.	Contact hole formation method
US7521364B2 (en) *	2005-12-02	2009-04-21	Macronix Internation Co., Ltd.	Surface topology improvement method for plug surface areas
US8067762B2 (en)	2006-11-16	2011-11-29	Macronix International Co., Ltd.	Resistance random access memory structure for enhanced retention
DE102007063271B4 (en)	2007-12-31	2009-11-26	Advanced Micro Devices, Inc., Sunnyvale	A method of making a dielectric interlayer material having different removal rates during a CMP process

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH01293632A (en) *	1988-05-23	1989-11-27	Nec Corp	Semiconductor device
EP0540321A1 (en) *	1991-10-30	1993-05-05	Samsung Electronics Co. Ltd.	A method for fabricating an interlayer-dielectric film of semiconductor device
US5340370A (en) *	1993-11-03	1994-08-23	Intel Corporation	Slurries for chemical mechanical polishing

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0680638B2 (en) *	1990-07-05	1994-10-12	株式会社東芝	Method for manufacturing semiconductor device
EP0469214A1 (en) *	1990-07-31	1992-02-05	International Business Machines Corporation	Method of forming stacked conductive and/or resistive polysilicon lands in multilevel semiconductor chips and structures resulting therefrom
US5164340A (en) *	1991-06-24	1992-11-17	Sgs-Thomson Microelectronics, Inc	Structure and method for contacts in cmos devices
US5244837A (en) *	1993-03-19	1993-09-14	Micron Semiconductor, Inc.	Semiconductor electrical interconnection methods
US5409858A (en) *	1993-08-06	1995-04-25	Micron Semiconductor, Inc.	Method for optimizing thermal budgets in fabricating semiconductors

1996
- 1996-08-14 TW TW085109890A patent/TW304297B/zh active
- 1996-09-23 KR KR1019980702210A patent/KR19990063743A/en not_active Application Discontinuation
- 1996-09-23 JP JP9513527A patent/JPH11512877A/en active Pending
- 1996-09-23 IL IL12374996A patent/IL123749A0/en unknown
- 1996-09-23 EP EP96933088A patent/EP1008175A4/en not_active Withdrawn
- 1996-09-23 WO PCT/US1996/015201 patent/WO1997012393A1/en not_active Application Discontinuation
- 1996-09-23 CN CN96198689A patent/CN1203697A/en active Pending
- 1996-09-23 AU AU71645/96A patent/AU7164596A/en not_active Abandoned

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH01293632A (en) *	1988-05-23	1989-11-27	Nec Corp	Semiconductor device
EP0540321A1 (en) *	1991-10-30	1993-05-05	Samsung Electronics Co. Ltd.	A method for fabricating an interlayer-dielectric film of semiconductor device
US5340370A (en) *	1993-11-03	1994-08-23	Intel Corporation	Slurries for chemical mechanical polishing

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 014, no. 082 (E - 0889) 15 February 1990 (1990-02-15) *
See also references of WO9712393A1 *

Also Published As

Publication number	Publication date
CN1203697A (en)	1998-12-30
EP1008175A1 (en)	2000-06-14
JPH11512877A (en)	1999-11-02
TW304297B (en)	1997-05-01
IL123749A0 (en)	1998-10-30
AU7164596A (en)	1997-04-17
WO1997012393A1 (en)	1997-04-03
KR19990063743A (en)	1999-07-26

Legal Events

Date	Code	Title	Description
2000-04-28	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
2000-06-14	17P	Request for examination filed	Effective date: 19980428
2000-06-14	AK	Designated contracting states	Kind code of ref document: A1 Designated state(s): DE FR GB IE IT
2000-10-18	A4	Supplementary search report drawn up and despatched	Effective date: 20000831
2000-10-18	AK	Designated contracting states	Kind code of ref document: A4 Designated state(s): DE FR GB IE IT
2003-08-22	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN
2003-10-08	18D	Application deemed to be withdrawn	Effective date: 20030301
2007-05-11	REG	Reference to a national code	Ref country code: HK Ref legal event code: WD Ref document number: 1028677 Country of ref document: HK

Publication	Publication Date	Title
EP0706216A3 (en)	1997-12-03	Interlayer dielectric structure for semiconductor device
GB2307342B (en)	2000-09-27	Polishing apparatus
SG45510A1 (en)	1998-01-16	Stacked container capacitor using chemical mechanical polishing
AU4589897A (en)	1998-04-17	Multi-oxidizer slurry for chemical mechanical polishing
GB9619757D0 (en)	1996-11-06	Chemical process
GB2313295B (en)	2000-02-09	Apparatus for making beverages
GB9617351D0 (en)	1996-10-02	Chemical process
GB9610320D0 (en)	1996-07-24	Chemical process
GB9622345D0 (en)	1997-01-08	Chemical process
IL123749A0 (en)	1998-10-30	Capped interlayer dielectric for chemical mechanical polishing
GB9511861D0 (en)	1995-08-09	Liquid-vapour contact apparatus
GB9616279D0 (en)	1996-09-11	Chemical process
GB9909037D0 (en)	1999-06-16	Chemical mechanical polishing apparatus
AU4888997A (en)	1998-05-22	Insulating bottle
GB9610450D0 (en)	1996-07-24	Chemical process
GB9621135D0 (en)	1996-11-27	Chemical process
GB9608094D0 (en)	1996-06-26	Chemical process
GB9603522D0 (en)	1996-04-17	Chemical process
PL57610Y1 (en)	2000-01-31	Electric preheater for liquids
GB9509772D0 (en)	1995-07-05	Hand held drinks dispencer
GB9517402D0 (en)	1995-10-25	Beverage making apparatus
AU130671S (en)	1997-07-21	Beverage making apparatus
GB9622069D0 (en)	1996-12-18	Drinks dispensing apparatus
GB9806840D0 (en)	1998-05-27	Laminated dielectric for semiconductor
GB9624113D0 (en)	1997-01-08	Chemical process