EP1104884A3 - Fire detector - Google Patents

Fire detector Download PDF

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Publication number
EP1104884A3
EP1104884A3 EP00124164A EP00124164A EP1104884A3 EP 1104884 A3 EP1104884 A3 EP 1104884A3 EP 00124164 A EP00124164 A EP 00124164A EP 00124164 A EP00124164 A EP 00124164A EP 1104884 A3 EP1104884 A3 EP 1104884A3
Authority
EP
European Patent Office
Prior art keywords
fire detector
transistor
gas
detection
controllable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP00124164A
Other languages
German (de)
French (fr)
Other versions
EP1104884A2 (en
Inventor
Maximilian Dr. Fleischer
Hans Prof. Meixner
Otto-Walter Moser
Bernhard Ostrick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP1104884A2 publication Critical patent/EP1104884A2/en
Publication of EP1104884A3 publication Critical patent/EP1104884A3/en
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
    • G01N27/4143—Air gap between gate and channel, i.e. suspended gate [SG] FETs

Abstract

Es wird ein Brandmelder mit mindestens einem Gassensor beschrieben, wobei die Detektion mit einem Feldeffekttransistor vorgesehen ist, wobei die Gate-Elektrode des Transistors zur Gasdetektion eine oder mehrere gassensitive Schichten aufweist, so daß die Kanalleitfähigkeit des Transistors in Abhängigkeit von einem oder mehreren zu detektierenden Gasen steuerbar ist.

Figure 00000001
A fire detector with at least one gas sensor is described, the detection being provided with a field effect transistor, the gate electrode of the transistor for gas detection having one or more gas-sensitive layers, so that the channel conductivity of the transistor is dependent on one or more gases to be detected is controllable.
Figure 00000001
EP00124164A 1999-11-23 2000-11-07 Fire detector Ceased EP1104884A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE1999156303 DE19956303A1 (en) 1999-11-23 1999-11-23 Fire detectors with gas sensors
DE19956303 1999-11-23

Publications (2)

Publication Number Publication Date
EP1104884A2 EP1104884A2 (en) 2001-06-06
EP1104884A3 true EP1104884A3 (en) 2004-05-26

Family

ID=7930018

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00124164A Ceased EP1104884A3 (en) 1999-11-23 2000-11-07 Fire detector

Country Status (2)

Country Link
EP (1) EP1104884A3 (en)
DE (1) DE19956303A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10110471C2 (en) 2001-03-05 2003-12-18 Siemens Ag Alcohol sensor based on the principle of work function measurement
JP4870577B2 (en) * 2004-01-27 2012-02-08 エイチツースキャン コーポレイション Gas sensor with integrated reference element
DE102004019604A1 (en) 2004-04-22 2005-11-17 Siemens Ag Method for minimizing cross sensitivities in FET based gas sensors
DE102004019640A1 (en) * 2004-04-22 2005-11-17 Siemens Ag Method for increasing the selectivity of FET-based gas sensors
DE102004019641B4 (en) 2004-04-22 2009-10-01 Micronas Gmbh FET-based gas sensor
DE102004019638A1 (en) * 2004-04-22 2005-11-17 Siemens Ag FET-based sensor for the detection of particularly reducing gases, manufacturing and operating methods
FR2872914B1 (en) * 2004-07-07 2006-10-13 Univ Rennes I Etablissement Pu SENSOR FOR DETECTING AND / OR MEASURING A CONCENTRATION OF ELECTRICAL CHARGES CONTAINED IN AN ATMOSPHERE, USES AND METHOD FOR MANUFACTURING SAME
DE102005010454A1 (en) * 2005-03-08 2006-09-21 Robert Bosch Gmbh gas sensor
EP1707952A1 (en) 2005-03-31 2006-10-04 Micronas GmbH Gas sensitive field effect transistor comprising air gap and manufacturing thereof
DE102005046944A1 (en) * 2005-09-30 2007-04-05 Micronas Gmbh Gas-sensitive field-effect transistor for the detection of chlorine
DE102007037110B4 (en) * 2007-08-07 2015-04-02 Klafs Gmbh & Co. Kg Sauna cabin with fire alarm
DE102007057519A1 (en) * 2007-11-29 2009-10-01 Siemens Ag Gas sensor with low power consumption
EP2141491A1 (en) * 2008-07-02 2010-01-06 Micronas GmbH Gas sensor
US9134270B2 (en) * 2010-03-25 2015-09-15 Stichting Imec Nederland Amorphous thin film for sensing
DE102011017501A1 (en) * 2011-04-26 2012-10-31 Siemens Aktiengesellschaft Integrated gas sensor
DE102013218840A1 (en) 2013-09-19 2015-03-19 Robert Bosch Gmbh Micro hot plate device and sensor with a micro hotplate device
DE102016201950A1 (en) 2016-02-10 2017-08-10 Robert Bosch Gmbh gas sensor

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158807A (en) * 1977-04-25 1979-06-19 Massachusetts Institute Of Technology Gapped gate charge-flow transistor with a thin film sensor having two modes of conduction within the gapped gate used to sense a property of the ambient environment
JPS5529757A (en) * 1978-08-23 1980-03-03 Matsushita Electric Ind Co Ltd Detector of semiconductor integrated circuit
US4238758A (en) * 1977-12-08 1980-12-09 Kabushiki Kaisha Suwa Seikosha Semiconductor gas sensor
GB2135801A (en) * 1983-02-24 1984-09-05 Hochiki Co Fire alarm system
DE3526348A1 (en) * 1985-07-23 1987-02-05 Fraunhofer Ges Forschung SENSORS FOR THE SELECTIVE DETERMINATION OF COMPONENTS IN LIQUID OR GASEOUS PHASE
US4892834A (en) * 1986-08-07 1990-01-09 Eic Laboratories, Inc. Chemical sensor
DE3834189C1 (en) * 1988-10-07 1990-02-15 Ignaz Eisele Non-electrochemical production of chemically selective layers in suspended-gate field-effect transistors
US5045285A (en) * 1989-09-05 1991-09-03 United States Of America As Represented By The Secretary Of The Air Force Gaseous component identification with polymeric film sensor
EP0496672A1 (en) * 1991-01-24 1992-07-29 Commissariat à l'Energie Atomique Sensor for detecting chemical species or photons using a field effect transistor
DE4127004A1 (en) * 1991-08-16 1993-02-18 Avm Schmelter Gmbh & Co Kg Early fire detection arrangement - contains combination of sensors, microprocessor-controlled signal evaluation unit, fuzzy logic or neural network to avoid false alarms
EP0793096A2 (en) * 1996-02-28 1997-09-03 Motorola, Inc. Method of sensing a chemical and sensor therefor
US5693545A (en) * 1996-02-28 1997-12-02 Motorola, Inc. Method for forming a semiconductor sensor FET device
EP0947829A1 (en) * 1998-04-02 1999-10-06 Siemens Aktiengesellschaft CO2-sensor based on measurement of work function of carbonates or phosphates
WO2000026656A1 (en) * 1998-10-29 2000-05-11 Siemens Aktiengesellschaft Gas detection according to the principle of measuring work functions

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158807A (en) * 1977-04-25 1979-06-19 Massachusetts Institute Of Technology Gapped gate charge-flow transistor with a thin film sensor having two modes of conduction within the gapped gate used to sense a property of the ambient environment
US4238758A (en) * 1977-12-08 1980-12-09 Kabushiki Kaisha Suwa Seikosha Semiconductor gas sensor
JPS5529757A (en) * 1978-08-23 1980-03-03 Matsushita Electric Ind Co Ltd Detector of semiconductor integrated circuit
GB2135801A (en) * 1983-02-24 1984-09-05 Hochiki Co Fire alarm system
DE3526348A1 (en) * 1985-07-23 1987-02-05 Fraunhofer Ges Forschung SENSORS FOR THE SELECTIVE DETERMINATION OF COMPONENTS IN LIQUID OR GASEOUS PHASE
US4892834A (en) * 1986-08-07 1990-01-09 Eic Laboratories, Inc. Chemical sensor
DE3834189C1 (en) * 1988-10-07 1990-02-15 Ignaz Eisele Non-electrochemical production of chemically selective layers in suspended-gate field-effect transistors
US5045285A (en) * 1989-09-05 1991-09-03 United States Of America As Represented By The Secretary Of The Air Force Gaseous component identification with polymeric film sensor
EP0496672A1 (en) * 1991-01-24 1992-07-29 Commissariat à l'Energie Atomique Sensor for detecting chemical species or photons using a field effect transistor
DE4127004A1 (en) * 1991-08-16 1993-02-18 Avm Schmelter Gmbh & Co Kg Early fire detection arrangement - contains combination of sensors, microprocessor-controlled signal evaluation unit, fuzzy logic or neural network to avoid false alarms
EP0793096A2 (en) * 1996-02-28 1997-09-03 Motorola, Inc. Method of sensing a chemical and sensor therefor
US5693545A (en) * 1996-02-28 1997-12-02 Motorola, Inc. Method for forming a semiconductor sensor FET device
EP0947829A1 (en) * 1998-04-02 1999-10-06 Siemens Aktiengesellschaft CO2-sensor based on measurement of work function of carbonates or phosphates
WO2000026656A1 (en) * 1998-10-29 2000-05-11 Siemens Aktiengesellschaft Gas detection according to the principle of measuring work functions

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Section Ch Week 198015, Derwent World Patents Index; Class L03, AN 1980-26509C *
GU C ET AL: "The design and characteristics of a porphyrin LB film ChemFET gas sensor", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 284-285, 15 September 1996 (1996-09-15), pages 863 - 865, XP004078252, ISSN: 0040-6090 *
LEU M ET AL: "EVALUATION OF GAS MIXTURES WITH DIFFERENT SENSITIVE LAYERS INCORPORATED IN HYBRID FET STRUCTURES", SENSORS AND ACTUATORS B, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. B18, 1994, pages 678 - 681, XP000861740, ISSN: 0925-4005 *
LUNDSTROM I ET AL: "HYDROGEN IN SMOKE DETECTED BY THE Pd-GATE FIELD-EFFECT TRANSISTOR", REV SCI INSTRUM JUN 1976, vol. 47, no. 6, June 1976 (1976-06-01), pages 738 - 740, XP002261822 *
MEISTER V ET AL: "In situ control of the electrochemical gap height modification of a suspended gate field-effect transistor by capacitance-voltage measurement technique", SENSORS AND ACTUATORS B, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 46, no. 3, 15 May 1998 (1998-05-15), pages 226 - 235, XP004147302, ISSN: 0925-4005 *
NAKAMOTO T ET AL: "STUDY OF FIRE-ALARM SYSTEM USING PLURAL SEMICONDUCTOR AND QUARTZ-RESONATOR GAS SENSORS", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. A40, no. 2, 1 February 1994 (1994-02-01), pages 155 - 158, XP000434519, ISSN: 0924-4247 *
PATENT ABSTRACTS OF JAPAN vol. 004, no. 058 (P - 009) 30 April 1980 (1980-04-30) *
SCHARNAGL K ET AL: "Enhanced room temperature gas sensing with metal oxides by means of the electroadsorptive effect in hybrid suspended gate FET", EUROSENSORS CONFERENCE, SOUTHAMPTON, UK, 13-16 SEPT. 1998, vol. B57, no. 1-3, Sensors and Actuators B (Chemical), 7 Sept. 1999, Elsevier, Switzerland, pages 35 - 38, XP004252981, ISSN: 0925-4005 *

Also Published As

Publication number Publication date
EP1104884A2 (en) 2001-06-06
DE19956303A1 (en) 2001-06-07

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