EP1370716A4 - Tantalum-silicon and niobium-silicon substrates for capacitor anodes - Google Patents

Tantalum-silicon and niobium-silicon substrates for capacitor anodes

Info

Publication number: EP1370716A4
Authority: EP; European Patent Office
Prior art keywords: silicon; niobium; tantalum; capacitor anodes; substrates
Prior art date: 2001-02-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

EP02709474A

Other languages

German (de)

French (fr)

Other versions

EP1370716A1 (en

Inventor

Leah Simkins

Anastasia Conlon

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Materion Newton Inc

Original Assignee

HC Starck Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2001-02-12

Filing date

2002-02-12

Publication date

2007-08-08

2002-02-12 Application filed by HC Starck Inc filed Critical HC Starck Inc

2003-12-17 Publication of EP1370716A1 publication Critical patent/EP1370716A1/en

2007-08-08 Publication of EP1370716A4 publication Critical patent/EP1370716A4/en

Status Withdrawn legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor

EP02709474A 2001-02-12 2002-02-12 Tantalum-silicon and niobium-silicon substrates for capacitor anodes Withdrawn EP1370716A4 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US26837801P	2001-02-12	2001-02-12
US268378P		2001-02-12
PCT/US2002/004073 WO2002064858A1 (en)	2001-02-12	2002-02-12	Tantalum-silicon and niobium-silicon substrates for capacitor anodes

Publications (2)

Publication Number	Publication Date
EP1370716A1 EP1370716A1 (en)	2003-12-17
EP1370716A4 true EP1370716A4 (en)	2007-08-08

Family

ID=23022730

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP02709474A Withdrawn EP1370716A4 (en)	2001-02-12	2002-02-12	Tantalum-silicon and niobium-silicon substrates for capacitor anodes

Country Status (12)

Country	Link
EP (1)	EP1370716A4 (en)
JP (1)	JP2004518818A (en)
KR (1)	KR20030086593A (en)
CN (1)	CN1327035C (en)
AU (1)	AU2002243956B2 (en)
BR (1)	BR0207200A (en)
CA (1)	CA2438246A1 (en)
CZ (1)	CZ20032169A3 (en)
IL (1)	IL157273A0 (en)
MX (1)	MXPA03007171A (en)
RU (1)	RU2003127948A (en)
WO (1)	WO2002064858A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
BR0207200A (en) *	2001-02-12	2004-01-27	Starck H C Inc	Tantalum / Silicon and Niobium / Silicon Substrates for Capacitor Anodes
EP1683167B1 (en) *	2003-11-10	2012-04-18	Showa Denko K.K.	Niobium powder for capacitor, niobium sintered body and capacitor
CN1913523A (en) *	2005-08-09	2007-02-14	华为技术有限公司	Method for implementing layer level virtual private exchange service
WO2007130483A2 (en) *	2006-05-05	2007-11-15	Cabot Corporation	Tantalum powder with smooth surface and methods of manufacturing same
US7852615B2 (en) *	2008-01-22	2010-12-14	Avx Corporation	Electrolytic capacitor anode treated with an organometallic compound

Citations (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3614544A (en) *	1968-12-13	1971-10-19	Int Standard Electric Corp	Solid electrolytic capacitors having an additional insulated layer formed on the dielectric layer
US4432035A (en) *	1982-06-11	1984-02-14	International Business Machines Corp.	Method of making high dielectric constant insulators and capacitors using same
US4859257A (en) *	1986-01-29	1989-08-22	Fansteel Inc.	Fine grained embrittlement resistant tantalum wire
US4957541A (en) *	1988-11-01	1990-09-18	Nrc, Inc.	Capacitor grade tantalum powder
US5965942A (en) *	1994-09-28	1999-10-12	Sharp Kabushiki Kaisha	Semiconductor memory device with amorphous diffusion barrier between capacitor and plug
WO1999061672A1 (en) *	1998-05-22	1999-12-02	Cabot Corporation	Tantalum-silicon alloys and products containing the same and processes of making the same
EP0974988A2 (en) *	1998-07-07	2000-01-26	Matsushita Electric Industrial Co., Ltd.	Method of producing electrolytic capacitor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN1010447B (en) *	1987-06-17	1990-11-14	北京有色金属研究总院	Production method of solid electrolytic capacitors
JP2895166B2 (en) *	1990-05-31	1999-05-24	キヤノン株式会社	Method for manufacturing semiconductor device
KR100240649B1 (en) *	1996-11-07	2000-02-01	정선종	Method for forming diffusion prevention film
BR0207200A (en) *	2001-02-12	2004-01-27	Starck H C Inc	Tantalum / Silicon and Niobium / Silicon Substrates for Capacitor Anodes

2002
- 2002-02-12 BR BR0207200-9A patent/BR0207200A/en not_active IP Right Cessation
- 2002-02-12 CZ CZ20032169A patent/CZ20032169A3/en unknown
- 2002-02-12 MX MXPA03007171A patent/MXPA03007171A/en active IP Right Grant
- 2002-02-12 IL IL15727302A patent/IL157273A0/en unknown
- 2002-02-12 CA CA002438246A patent/CA2438246A1/en not_active Abandoned
- 2002-02-12 KR KR10-2003-7010542A patent/KR20030086593A/en not_active Application Discontinuation
- 2002-02-12 AU AU2002243956A patent/AU2002243956B2/en not_active Expired - Fee Related
- 2002-02-12 JP JP2002564166A patent/JP2004518818A/en not_active Withdrawn
- 2002-02-12 WO PCT/US2002/004073 patent/WO2002064858A1/en active Application Filing
- 2002-02-12 EP EP02709474A patent/EP1370716A4/en not_active Withdrawn
- 2002-02-12 CN CNB028048768A patent/CN1327035C/en not_active Expired - Fee Related
- 2002-02-12 RU RU2003127948/15A patent/RU2003127948A/en not_active Application Discontinuation

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3614544A (en) *	1968-12-13	1971-10-19	Int Standard Electric Corp	Solid electrolytic capacitors having an additional insulated layer formed on the dielectric layer
US4432035A (en) *	1982-06-11	1984-02-14	International Business Machines Corp.	Method of making high dielectric constant insulators and capacitors using same
US4859257A (en) *	1986-01-29	1989-08-22	Fansteel Inc.	Fine grained embrittlement resistant tantalum wire
US4957541A (en) *	1988-11-01	1990-09-18	Nrc, Inc.	Capacitor grade tantalum powder
US5965942A (en) *	1994-09-28	1999-10-12	Sharp Kabushiki Kaisha	Semiconductor memory device with amorphous diffusion barrier between capacitor and plug
WO1999061672A1 (en) *	1998-05-22	1999-12-02	Cabot Corporation	Tantalum-silicon alloys and products containing the same and processes of making the same
EP0974988A2 (en) *	1998-07-07	2000-01-26	Matsushita Electric Industrial Co., Ltd.	Method of producing electrolytic capacitor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO02064858A1 *

Also Published As

Publication number	Publication date
CN1491298A (en)	2004-04-21
JP2004518818A (en)	2004-06-24
MXPA03007171A (en)	2005-02-14
EP1370716A1 (en)	2003-12-17
BR0207200A (en)	2004-01-27
CA2438246A1 (en)	2002-08-22
RU2003127948A (en)	2005-03-27
IL157273A0 (en)	2004-02-19
CN1327035C (en)	2007-07-18
KR20030086593A (en)	2003-11-10
CZ20032169A3 (en)	2004-03-17
WO2002064858A1 (en)	2002-08-22
AU2002243956B2 (en)	2007-08-02

Legal Events

Date	Code	Title	Description
2003-10-31	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
2003-12-17	17P	Request for examination filed	Effective date: 20030912
2003-12-17	AK	Designated contracting states	Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
2003-12-17	AX	Request for extension of the european patent	Extension state: AL LT LV MK RO SI
2007-08-08	A4	Supplementary search report drawn up and despatched	Effective date: 20070710
2007-08-08	RIC1	Information provided on ipc code assigned before grant	Ipc: C25B 11/04 20060101ALI20070704BHEP Ipc: H01G 9/052 20060101ALI20070704BHEP Ipc: H01G 9/042 20060101AFI20070704BHEP
2008-07-18	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN
2008-08-13	18D	Application deemed to be withdrawn	Effective date: 20080128
2008-08-20	R18D	Application deemed to be withdrawn (corrected)	Effective date: 20080129

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