EP1521797A4 - ANTI-REFLECTIVE SILICONE-CONTAINING COMPOSITIONS AS A HARD MASK LAYER - Google Patents
ANTI-REFLECTIVE SILICONE-CONTAINING COMPOSITIONS AS A HARD MASK LAYERInfo
- Publication number
- EP1521797A4 EP1521797A4 EP02765835A EP02765835A EP1521797A4 EP 1521797 A4 EP1521797 A4 EP 1521797A4 EP 02765835 A EP02765835 A EP 02765835A EP 02765835 A EP02765835 A EP 02765835A EP 1521797 A4 EP1521797 A4 EP 1521797A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- composition
- antireflective
- moieties
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/38—Polysiloxanes modified by chemical after-treatment
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
- C08L83/06—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/34—Heterocyclic compounds having nitrogen in the ring
- C08K5/3442—Heterocyclic compounds having nitrogen in the ring having two nitrogen atoms in the ring
- C08K5/3445—Five-membered rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
- C08K5/41—Compounds containing sulfur bound to oxygen
- C08K5/42—Sulfonic acids; Derivatives thereof
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2002/022176 WO2004007192A1 (en) | 2000-06-23 | 2002-07-11 | Antireflective silicon-containing compositions as hardmask layer |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1521797A1 EP1521797A1 (en) | 2005-04-13 |
EP1521797A4 true EP1521797A4 (en) | 2006-12-20 |
Family
ID=34271593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02765835A Withdrawn EP1521797A4 (en) | 2002-07-11 | 2002-07-11 | ANTI-REFLECTIVE SILICONE-CONTAINING COMPOSITIONS AS A HARD MASK LAYER |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1521797A4 (es) |
JP (1) | JP4336310B2 (es) |
AU (1) | AU2002329596A1 (es) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1627007B1 (en) * | 2003-05-23 | 2007-10-31 | Dow Corning Corporation | Siloxane resin-based anti-reflective coating composition having high wet etch rate |
US7678529B2 (en) | 2005-11-21 | 2010-03-16 | Shin-Etsu Chemical Co., Ltd. | Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method |
JP5087807B2 (ja) * | 2006-02-22 | 2012-12-05 | 東京応化工業株式会社 | 有機半導体素子の製造方法及びそれに用いる絶縁膜形成用組成物 |
DE602007000498D1 (de) | 2006-04-11 | 2009-03-12 | Shinetsu Chemical Co | Siliziumhaltige, folienbildende Zusammensetzung, siliziumhaltige Folie, siliziumhaltiges, folientragendes Substrat und Strukturierungsverfahren |
US7855043B2 (en) | 2006-06-16 | 2010-12-21 | Shin-Etsu Chemical Co., Ltd. | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method |
KR100802226B1 (ko) * | 2006-12-21 | 2008-02-11 | 주식회사 하이닉스반도체 | 듀얼 다마신 패턴 형성 방법 |
JP5035770B2 (ja) * | 2007-02-16 | 2012-09-26 | 東レ・ファインケミカル株式会社 | 縮合多環式炭化水素基を有するシリコーン共重合体、及び、その製造方法 |
JP2008266576A (ja) * | 2007-03-29 | 2008-11-06 | Air Water Inc | ポリシロキサン化合物、その製造方法、及びその用途 |
US7875417B2 (en) | 2007-07-04 | 2011-01-25 | Shin-Etsu Chemical Co., Ltd. | Silicone-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method |
US8652750B2 (en) | 2007-07-04 | 2014-02-18 | Shin-Etsu Chemical Co., Ltd. | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method |
JP4793592B2 (ja) | 2007-11-22 | 2011-10-12 | 信越化学工業株式会社 | 金属酸化物含有膜形成用組成物、金属酸化物含有膜、金属酸化物含有膜形成基板及びこれを用いたパターン形成方法 |
JP5015891B2 (ja) | 2008-10-02 | 2012-08-29 | 信越化学工業株式会社 | 金属酸化物含有膜形成用組成物、金属酸化物含有膜形成基板及びパターン形成方法 |
JP5015892B2 (ja) | 2008-10-02 | 2012-08-29 | 信越化学工業株式会社 | ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びパターン形成方法 |
JP4790786B2 (ja) | 2008-12-11 | 2011-10-12 | 信越化学工業株式会社 | 塗布型ケイ素含有膜の剥離方法 |
JP5399347B2 (ja) | 2010-09-01 | 2014-01-29 | 信越化学工業株式会社 | ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びこれを用いたパターン形成方法 |
JP5782797B2 (ja) | 2010-11-12 | 2015-09-24 | 信越化学工業株式会社 | 近赤外光吸収色素化合物、近赤外光吸収膜形成材料、及びこれにより形成される近赤外光吸収膜 |
JP5518772B2 (ja) | 2011-03-15 | 2014-06-11 | 信越化学工業株式会社 | パターン形成方法 |
JP5785121B2 (ja) | 2011-04-28 | 2015-09-24 | 信越化学工業株式会社 | パターン形成方法 |
US8722307B2 (en) | 2011-05-27 | 2014-05-13 | International Business Machines Corporation | Near-infrared absorptive layer-forming composition and multilayer film comprising near-infrared absorptive layer |
JP5650086B2 (ja) | 2011-06-28 | 2015-01-07 | 信越化学工業株式会社 | レジスト下層膜形成用組成物、及びパターン形成方法 |
JP5453361B2 (ja) | 2011-08-17 | 2014-03-26 | 信越化学工業株式会社 | ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法 |
JP5746005B2 (ja) | 2011-11-29 | 2015-07-08 | 信越化学工業株式会社 | ケイ素含有レジスト下層膜形成用組成物及びパターン形成方法 |
JP5798102B2 (ja) | 2011-11-29 | 2015-10-21 | 信越化学工業株式会社 | ケイ素含有レジスト下層膜形成用組成物及びパターン形成方法 |
JP5882776B2 (ja) | 2012-02-14 | 2016-03-09 | 信越化学工業株式会社 | レジスト下層膜形成用組成物、及びパターン形成方法 |
JP5739360B2 (ja) | 2012-02-14 | 2015-06-24 | 信越化学工業株式会社 | ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法 |
JP5833492B2 (ja) | 2012-04-23 | 2015-12-16 | 信越化学工業株式会社 | ケイ素化合物、ポリシロキサン化合物、これを含むレジスト下層膜形成用組成物及びパターン形成方法 |
JP5756134B2 (ja) | 2013-01-08 | 2015-07-29 | 信越化学工業株式会社 | 金属酸化物含有膜形成用組成物及びパターン形成方法 |
JP5830044B2 (ja) | 2013-02-15 | 2015-12-09 | 信越化学工業株式会社 | レジスト下層膜形成用組成物及びパターン形成方法 |
US8759220B1 (en) | 2013-02-28 | 2014-06-24 | Shin-Etsu Chemical Co., Ltd. | Patterning process |
JP5830048B2 (ja) | 2013-03-15 | 2015-12-09 | 信越化学工業株式会社 | チタン含有レジスト下層膜形成用組成物及びパターン形成方法 |
JP6189758B2 (ja) | 2013-03-15 | 2017-08-30 | 信越化学工業株式会社 | チタン含有レジスト下層膜形成用組成物及びパターン形成方法 |
JP6114157B2 (ja) | 2013-10-02 | 2017-04-12 | 信越化学工業株式会社 | ケイ素含有レジスト下層膜形成用組成物及びパターン形成方法 |
JP6158754B2 (ja) | 2014-06-04 | 2017-07-05 | 信越化学工業株式会社 | レジスト下層膜形成用組成物、及びパターン形成方法 |
JP6196194B2 (ja) | 2014-08-19 | 2017-09-13 | 信越化学工業株式会社 | 紫外線吸収剤、レジスト下層膜形成用組成物、及びパターン形成方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1061560A2 (en) * | 1999-06-11 | 2000-12-20 | Shipley Company LLC | Antireflective hard mask compositions |
WO2000077575A1 (en) * | 1999-06-10 | 2000-12-21 | Alliedsignal Inc. | Spin-on-glass anti-reflective coatings for photolithography |
US20020042020A1 (en) * | 2000-10-10 | 2002-04-11 | Shipley Company L.L.C. | Antireflective composition |
US20020076642A1 (en) * | 2000-09-19 | 2002-06-20 | Shipley Company, L.L.C. | Antireflective composition |
WO2002091083A1 (en) * | 2001-05-08 | 2002-11-14 | Shipley Company, L.L.C. | Photoimageable composition |
WO2003089992A1 (en) * | 2002-04-16 | 2003-10-30 | International Business Machines Corporation | Antireflective sio-containing compositions for hardmask layer |
-
2002
- 2002-07-11 AU AU2002329596A patent/AU2002329596A1/en not_active Abandoned
- 2002-07-11 JP JP2004521395A patent/JP4336310B2/ja not_active Expired - Lifetime
- 2002-07-11 EP EP02765835A patent/EP1521797A4/en not_active Withdrawn
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000077575A1 (en) * | 1999-06-10 | 2000-12-21 | Alliedsignal Inc. | Spin-on-glass anti-reflective coatings for photolithography |
EP1061560A2 (en) * | 1999-06-11 | 2000-12-20 | Shipley Company LLC | Antireflective hard mask compositions |
US20020076642A1 (en) * | 2000-09-19 | 2002-06-20 | Shipley Company, L.L.C. | Antireflective composition |
US20020042020A1 (en) * | 2000-10-10 | 2002-04-11 | Shipley Company L.L.C. | Antireflective composition |
WO2002091083A1 (en) * | 2001-05-08 | 2002-11-14 | Shipley Company, L.L.C. | Photoimageable composition |
WO2003089992A1 (en) * | 2002-04-16 | 2003-10-30 | International Business Machines Corporation | Antireflective sio-containing compositions for hardmask layer |
Non-Patent Citations (1)
Title |
---|
See also references of WO2004007192A1 * |
Also Published As
Publication number | Publication date |
---|---|
EP1521797A1 (en) | 2005-04-13 |
AU2002329596A1 (en) | 2004-02-02 |
JP4336310B2 (ja) | 2009-09-30 |
JP2005520354A (ja) | 2005-07-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20040108 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL LT LV MK RO SI |
|
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20061117 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: C08K 5/34 20060101ALN20061113BHEP Ipc: C08K 5/42 20060101ALN20061113BHEP Ipc: G03F 7/09 20060101ALI20061113BHEP Ipc: G03F 7/075 20060101ALI20061113BHEP Ipc: C08L 83/06 20060101ALI20061113BHEP Ipc: C08L 83/04 20060101ALI20061113BHEP Ipc: C08G 77/14 20060101ALI20061113BHEP Ipc: C08G 77/38 20060101ALI20061113BHEP Ipc: C08G 77/04 20060101AFI20040131BHEP |
|
17Q | First examination report despatched |
Effective date: 20070308 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20070719 |