EP1695379B1 - Process of manufacture of contoured insulator layer of silicon-on-onsulator wafers - Google Patents
Process of manufacture of contoured insulator layer of silicon-on-onsulator wafers Download PDFInfo
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- EP1695379B1 EP1695379B1 EP03819163A EP03819163A EP1695379B1 EP 1695379 B1 EP1695379 B1 EP 1695379B1 EP 03819163 A EP03819163 A EP 03819163A EP 03819163 A EP03819163 A EP 03819163A EP 1695379 B1 EP1695379 B1 EP 1695379B1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/005—Bulk micromachining
- B81C1/00507—Formation of buried layers by techniques other than deposition, e.g. by deep implantation of elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
Definitions
- the present invention relates generally to silicon-on-insulator wafers and, more particularly, to a contoured insulator layer of such wafers.
- isolation technology is one of the critical aspects of manufacturing ICs.
- NMOS complementary metal-oxide-semiconductor
- CMOS complementary metal-oxide-semiconductor
- bipolar An NMOS or negative-channel metal-oxide semiconductor is a type of semiconductor that is negatively charged so that transistors are turned on or off by the movement of electrons.
- a PMOS positive-channel MOS
- An NMOS is faster than a PMOS, but also more expensive to produce.
- CMOS or complementary metal oxide semiconductor uses both NMOS (negative polarity) and PMOS (positive polarity) circuits. Because only one of the circuit types is on at any given time, CMOS chips require less power than chips using just one type of transistor. This makes CMOS chips particularly attractive for use in battery-powered devices, such as portable computers. Personal computers also contain a small amount of battery-powered CMOS memory to hold the date, time, and system setup parameters.
- the bipolar transistor is an electronic device with two pn junctions in close proximity. There are three device regions: an emitter, a base (the middle region), and a collector.
- the two pn junctions i.e., the emitter-base and collector-base junctions
- the two pn junctions are in a single bar of semiconductor material, separated by a distance. Modulation of the current flow in one pn junction by changing the bias of the nearby junction is called bipolar-transistor action.
- External leads can be attached to each of the three regions, and external voltages and currents can be applied to the device from these leads.
- isolation technologies have different attributes with respect to minimum isolation spacing, surface planarity, process complexity, and density of defects generated during manufacture of the isolation structure. Tradeoffs must be made among these characteristics when selecting an appropriate isolation technology for a particular circuit application.
- junction isolation a term including structures that are isolated by an oxide along the side walls and by a junction at the bottom.
- PMOS and NMOS ICs did not need junction isolation; nevertheless, it was still necessary to provide an isolation structure that would prevent the establishment of parasitic channels between adjacent devices.
- LOCOS isolation for LOCal Oxidation of Silicon
- junction isolation is not suitable for high-voltage applications because at supply voltages of ⁇ 30 volts junction breakdown occurs under reasonable doping levels and device-structure dimensions. Transient photocurrents produced in pn junctions by gamma rays render junction isolation ineffective in high-radiation environments.
- a preferred isolation technique is one that depends on completely surrounding devices with an insulator, rather than with a pn junction.
- SOI isolation processes include dielectric isolation (“DI”) and silicon-on-sapphire (“SOS”). Also included are more recently developed technologies: separation by implanted oxygen (“SIMOX”), zone-melting-recrystallization (“ZMR”), full isolation by porous-oxidized silicon (“FIPOS”), and wafer bonding.
- SIMOX implanted oxygen
- ZMR zone-melting-recrystallization
- FIPOS porous-oxidized silicon
- SOI chips are formed by setting transistors on a thin silicon layer that is separated from the silicon substrate by an insulator layer of thin silicon oxide or glass, which minimizes capacitance (or the energy absorbed from the transistor). Full isolation is provided.
- SOI isolation offers many advantages. In some cases, the SOI technique uses simpler manufacturing sequences and yields an improved cross-section compared to circuits fabricated on bulk silicon. These advantages are illustrated in Figs. 1A and 1B , which compare a mesa-isolated SOI CMOS process ( Fig. 1B ) with a p-well bulk CMOS process ( Fig. 1A ). SOI isolation also provides reduced capacitive coupling between various circuit elements over the entire IC and, in CMOS circuits, latch up is eliminated. SOI isolation may reduce chip size, increase packing density, or both. Minimum device separation is determined only by the limitation of lithography. Finally, reductions in parasitic capacitance and chip size allow the SOI process to provide increased circuit speed.
- SOI isolation has its disadvantages.
- active-device regions in SOI technologies tend to be poorer in crystalline quality than their counterparts in bulk silicon.
- the presence of an insulator layer tends to complicate or prevent the adoption of effective defect-gettering and impurity-gettering processes. Nevertheless, the advantages of SOI isolation are sufficiently attractive that improvements to the technique have important commercial implications.
- Document EP 0461 362 (18 Dec 1991 ) describes a method of manufacturing a semiconductor device including a source region, a drain region and a channel region provided on an insulating film and a gate electrode provided through a gate insulating film on the semiconductor layer, wherein through the use of a mask, the thickness of the channel region is smaller than the thickness of the source or drain region, and also the level of the interface between the channel region and the insulating film is different from the level of the interface of the source or drain region and the insulating film.
- a new process of manufacturing a SOI wafer is provided. It would be desirable to increase the reliability, ease, and efficiency of the process of manufacturing SOI wafers. It would also be desirable to widen the lithographic focus window of the manufacturing process. It would further be desirable to reduce the time required to market SOI wafers. It would yet further be desirable to positively impact photoresist thickness and stepper manufacturer selection during manufacture.
- the present invention provides processes for manufacturing a silicon-on-insulator wafer comprising a top silicon layer, a silicon substrate, and an oxide insulator layer disposed across the wafer and between the silicon substrate and the top silicon layer.
- the oxide insulator layer has at least one of a contoured top surface and a contoured bottom surface.
- One process for manufacturing a silicon-on-insulator wafer according to the present invention comprises the initial step of providing a silicon substrate. An oxide insulator layer is formed across the wafer, the insulator layer being buried within the silicon substrate, dividing the silicon substrate from a top silicon layer, and having a top surface and a bottom surface. Next, the insulator layer is thickened. At least one of a contoured top surface and a contoured bottom surface of the insulator layer is created. Finally, the structure is annealed to further thicken and contour the insulator layer.
- Another exemplary process for manufacturing a silicon-on-insulator wafer according to the present invention also comprises the initial step of providing a silicon substrate. Again, an oxide insulator layer is formed across the wafer, the insulator layer being buried within the silicon - substrate, dividing the silicon substrate from a top silicon layer, and having a top surface and a bottom surface. Next, the insulator layer is thickened. The chip periodicity for the wafer is generated and the coordinates are set where a predetermined topography of the buried oxide insulator layer is desired. The coordinates are transferred to an oxygen implanter for implementation.
- the energy, dose, or temperature of the oxygen implant are adjusted with the implanter scanning and the wafer tilting or rotating according to preset coordinates from the chip periodicity map at the predetermined thicknesses and contours required. Created is at least one of a contoured top surface and a contoured bottom surface of the insulator layer. Finally, the structure is annealed to further thicken and contour the insulator layer.
- Fig. 2 shows a conventional apparatus for the formation of a SIMOX wafer 10.
- the creation of a buried insulator layer 2 of silicon dioxide (SiO 2 ) by implanting oxygen into a silicon substrate 4 through the SIMOX process is one of the main commercial techniques for creating SOI structures.
- a top silicon layer 6 resides on the insulator layer 2.
- the technique requires a high dose (- 2 x 10 18 cm -2 ) of oxygen (O + ) ions 22 from an implantation source 20; this dose provides the minimum concentration necessary to ensure that a continuous layer of stoichiometric silicon dioxide will be formed by reaction of the oxygen with silicon during the annealing process.
- the energy of the implant must also be high enough (150-180 keV) that the peak of the implant is sufficiently deep within the silicon (0.3-0.5 mm).
- the wafer is normally heated to more than 400°C during the implantation process to ensure that the surface maintains its crystallinity during the high-dose implantation step.
- a post-implant anneal is performed in a neutral ambient 30 such as N 2 or in O 2 to a sufficient time (3-5 hours) and at a high enough temperature (1,100-1,500°C) to form a buried layer of silicon dioxide.
- the anneal step also allows excess oxygen in the surface silicon to out-diffuse, thereby increasing the dielectric strength of the buried oxide ("BOX") layer.
- the crystalline-silicon surface is typically thin (about 100-300 nm). Therefore, an additional layer of epitaxial silicon is usually deposited so that single-crystal device regions ⁇ 0.5 mm thick are available for fabricating devices.
- the Table provided below summarizes data obtained using a scanning electron microscope ("SEM") to measure cross-sections on sample SOI wafers 10 manufactured using the SIMOX process.
- the data include thicknesses of buried insulator layers 2 and silicon-on-insulator layers 6 obtained with five different oxygen implant sequences while holding the anneal constant (at 1,450°C).
- the examples are included to more clearly demonstrate the overall nature of the invention. These examples are exemplary, not restrictive, of the invention.
- Dose Energy Twist Temp. Avg BOX SOI Total Oxide Depth Bottom of BOX 1st 1.25E+017 178K 20 Deg. 365C 2nd 1.45E+017 178K 200 Deg. 365C 1.25E+017 178K 200 Deg.
- 365C 1.05E+017 178K 200 Deg. 365C 3rd 2.00E+015 165K 20 Deg. Room 1382 678 2060 1.00E+015 163K 20 Deg. Room 1312 663 1975 2.00E+015 161K 20 Deg. Room 1234 616 1850 1450C Anneal 1st 1.25E+017 169K 20 Deg. 365C 2nd 1.25E+017 169K 200 Deg. 365C 1.05E+017 169K 200 Deg. 365C 3rd 2.00E+015 157K 20 Deg. Room 1339 484 1823 1.5E+015 157K 20 Deg. Room 1210 429 1639 1450C Anneal
- a SOI wafer 10 is a structure in which a buried insulator layer 2 electrically isolates a silicon layer 6 from a silicon substrate 4.
- the buried insulator layer 2 does not always occupy the entire silicon substrate 4. Often, the insulator layer 2 occupies a portion of the silicon substrate 4.
- the conventional SOI wafer 10 includes an insulator layer 2 having a substantially flat top surface 8 and a substantially flat bottom surface 12.
- the thickness uniformity specification for a flat insulator layer 2 is usually ⁇ 1%, although the degree of flatness can vary randomly across the wafer surface. SIMOX has some advantages over other SOI technologies.
- the fabrication of SIMOX-based circuits uses processing steps similar to those used in conventional IC manufacturing.
- the SIMOX process does have some drawbacks, however, and the present invention is not limited to that specific process.
- the SIMOX process requires the availability of a special oxygen implanter.
- High-beam-current implanter machines are necessary to make high-volume production of wafers more feasible.
- Implantation parameters and anneal schedules must be chosen appropriately to provide optimum IC performance because the microstructure of the surface-silicon film is sensitive to the oxygen dose and the post-oxygen implant annealing temperature.
- a lower dose of oxygen results in a higher oxygen content in the silicon film and a higher density of oxygen precipitates at the silicon-film/buried oxide interface following an anneal at 1,150°C.
- thermal annealing at 1,275°C annihilates the oxygen precipitates in the silicon film.
- the topography of the buried insulator layer 2 is patterned or altered to achieve a variety of advantages relative to the conventional, substantially flat buried oxide layer.
- the lithographic and other physical and electrical process windows can be widened by control and optimization of the buried insulator layer on SOI wafers according to the present invention.
- the invention can be adapted for all types, thicknesses, diameters, and other specifications of SOI wafers.
- the thickness of the top silicon layer of the SOI structure is dictated by the target electrical performance.
- the thickness of the insulator layer under the top silicon layer although not arbitrary, is not as critical as that of the top silicon layer.
- the reflective properties of the insulator layer can be used to optimize the numerical aperture and sigma of the lens of the lithography tool to keep the focus window as wide as possible. Current manufacturing processes simply target a uniform thickness across the SOI wafer.
- the invention is also useful for optical switching especially in micro-electro-mechanical ("MEMS') systems.
- MEMS manufacturing is changing from bulk silicon wafers to SOI wafers due to the beneficial dielectric isolation provided by the buried oxide insulator layer within the SOI wafer.
- the insulator layer is also used as an etch stop for both wet and dry etching of silicon from either side of the wafer to form and define the shapes of micro structures with flat surfaces that could also selectively benefit from curved surfaces in applications like the formation of mirrors in MEMS optical switches.
- each mirror has a diameter or edges of 50 mm or more, and the array can be 1,000 x 1,000.
- the need to keep the free light beams intact without any loss of signal is challenging; expensive amplification methods are usually needed after the switch.
- the mirrors formed on SOI wafers are substantially flat on top, which is what is typically desired, and substantially flat on the bottom because they have been defined on a flat BOX insulator layer.
- a local contoured topography of the buried oxide isolation layer underneath the area and volume of the SOI designated to be etched into a mirror simultaneously contours that area of the single crystal silicon itself.
- This topography allows a mirror to assume a concave surface to re-focus the weakened light beam at periodic intervals.
- the topography allows the mirror and the optical designers to send the light beam in two different directions by assuming a convex surface, allowing the formation of arrays in asymmetrical configurations. Variations in the BOX insulator layer thickness can also help create beams of various lengths.
Description
- The present invention relates generally to silicon-on-insulator wafers and, more particularly, to a contoured insulator layer of such wafers.
- The process of manufacturing electric circuits involves connecting isolated devices through specific electrical paths. When manufacturing silicon integrated circuits (ICs) or chips, therefore, the devices built into the silicon must be isolated from one another. The devices can subsequently be interconnected to create the specific circuit configurations desired. Thus, isolation technology is one of the critical aspects of manufacturing ICs.
- A variety of techniques have been developed to isolate devices in ICs. One reason is that different IC types have different isolation requirements. Such types include, for example, NMOS, CMOS, and bipolar. An NMOS or negative-channel metal-oxide semiconductor is a type of semiconductor that is negatively charged so that transistors are turned on or off by the movement of electrons. In contrast, a PMOS (positive-channel MOS) works by moving electron vacancies. An NMOS is faster than a PMOS, but also more expensive to produce.
- A CMOS or complementary metal oxide semiconductor uses both NMOS (negative polarity) and PMOS (positive polarity) circuits. Because only one of the circuit types is on at any given time, CMOS chips require less power than chips using just one type of transistor. This makes CMOS chips particularly attractive for use in battery-powered devices, such as portable computers. Personal computers also contain a small amount of battery-powered CMOS memory to hold the date, time, and system setup parameters.
- The bipolar transistor is an electronic device with two pn junctions in close proximity. There are three device regions: an emitter, a base (the middle region), and a collector. The two pn junctions (i.e., the emitter-base and collector-base junctions) are in a single bar of semiconductor material, separated by a distance. Modulation of the current flow in one pn junction by changing the bias of the nearby junction is called bipolar-transistor action. External leads can be attached to each of the three regions, and external voltages and currents can be applied to the device from these leads.
- These and other different IC types require different isolation technologies. In addition, the various isolation technologies have different attributes with respect to minimum isolation spacing, surface planarity, process complexity, and density of defects generated during manufacture of the isolation structure. Tradeoffs must be made among these characteristics when selecting an appropriate isolation technology for a particular circuit application.
- Historically, because bipolar ICs were the first to be developed, a technology for isolating the collector regions of the bipolar devices was also the first to be invented (called junction isolation, a term including structures that are isolated by an oxide along the side walls and by a junction at the bottom). PMOS and NMOS ICs did not need junction isolation; nevertheless, it was still necessary to provide an isolation structure that would prevent the establishment of parasitic channels between adjacent devices. The most important technique developed was called LOCOS isolation (for LOCal Oxidation of Silicon), which involved the formation of a semi-recessed oxide in the nonactive areas of the substrate.
- As device geometries reached submicron size, conventional LOCOS isolation technologies reached the limits of their effectiveness. Therefore, alternative isolation processes for CMOS and bipolar technologies were needed. Modified LOCOS processes, which overcome some of the drawbacks of conventional LOCOS for small-geometry devices; trench isolation; and selective-epitaxial isolation--all were among the newer approaches adopted.
- Devices that must function under high voltages and in harsh radiation environments require even more stringent isolation technologies. Junction isolation is not suitable for high-voltage applications because at supply voltages of ±30 volts junction breakdown occurs under reasonable doping levels and device-structure dimensions. Transient photocurrents produced in pn junctions by gamma rays render junction isolation ineffective in high-radiation environments. For such applications, a preferred isolation technique is one that depends on completely surrounding devices with an insulator, rather than with a pn junction.
- These techniques are generally termed silicon-on-insulator ("SOI") isolation processes. Included within SOI isolation processes are older approaches such as dielectric isolation ("DI") and silicon-on-sapphire ("SOS"). Also included are more recently developed technologies: separation by implanted oxygen ("SIMOX"), zone-melting-recrystallization ("ZMR"), full isolation by porous-oxidized silicon ("FIPOS"), and wafer bonding. The SOI process was developed by International Business Machines Corporation.
- Unlike CMOS-based chips that are doped with impurities enabling the chip to store capacitance that must be discharged and recharged, SOI chips are formed by setting transistors on a thin silicon layer that is separated from the silicon substrate by an insulator layer of thin silicon oxide or glass, which minimizes capacitance (or the energy absorbed from the transistor). Full isolation is provided.
- SOI isolation offers many advantages. In some cases, the SOI technique uses simpler manufacturing sequences and yields an improved cross-section compared to circuits fabricated on bulk silicon. These advantages are illustrated in
Figs. 1A and 1B , which compare a mesa-isolated SOI CMOS process (Fig. 1B ) with a p-well bulk CMOS process (Fig. 1A ). SOI isolation also provides reduced capacitive coupling between various circuit elements over the entire IC and, in CMOS circuits, latch up is eliminated. SOI isolation may reduce chip size, increase packing density, or both. Minimum device separation is determined only by the limitation of lithography. Finally, reductions in parasitic capacitance and chip size allow the SOI process to provide increased circuit speed. - When an SOI technology based on a thin silicon film is used, two other important advantages can be obtained. First, a relatively benign surface topography (for step coverage) is produced if device isolation can be achieved by a complete island, sloped-etch wall process of the thin silicon film. Second, because SOI isolation techniques eliminate the parasitic field of the field effect transistor ("FET") between adjacent devices, LOCOS processes are not needed.
- As with all isolation technologies, SOI isolation has its disadvantages. For example, active-device regions in SOI technologies tend to be poorer in crystalline quality than their counterparts in bulk silicon. More relevant to the present invention, the presence of an insulator layer tends to complicate or prevent the adoption of effective defect-gettering and impurity-gettering processes. Nevertheless, the advantages of SOI isolation are sufficiently attractive that improvements to the technique have important commercial implications.
- Document
EP 0461 362 (18 Dec 1991 ) describes a method of manufacturing a semiconductor device including a source region, a drain region and a channel region provided on an insulating film and a gate electrode provided through a gate insulating film on the semiconductor layer, wherein through the use of a mask, the thickness of the channel region is smaller than the thickness of the source or drain region, and also the level of the interface between the channel region and the insulating film is different from the level of the interface of the source or drain region and the insulating film. - To overcome the shortcomings of conventional SOI isolation processes and the devices resulting from such processes, a new process of manufacturing a SOI wafer is provided. It would be desirable to increase the reliability, ease, and efficiency of the process of manufacturing SOI wafers. It would also be desirable to widen the lithographic focus window of the manufacturing process. It would further be desirable to reduce the time required to market SOI wafers. It would yet further be desirable to positively impact photoresist thickness and stepper manufacturer selection during manufacture.
- It would be desirable to incorporate improved SOI wafers into such applications as optical switches. It would further be desirable to increase the speed of optical switches. It would yet further be desirable to reduce power consumption.
- The present invention provides processes for manufacturing a silicon-on-insulator wafer comprising a top silicon layer, a silicon substrate, and an oxide insulator layer disposed across the wafer and between the silicon substrate and the top silicon layer. The oxide insulator layer has at least one of a contoured top surface and a contoured bottom surface.
- One process for manufacturing a silicon-on-insulator wafer according to the present invention comprises the initial step of providing a silicon substrate. An oxide insulator layer is formed across the wafer, the insulator layer being buried within the silicon substrate, dividing the silicon substrate from a top silicon layer, and having a top surface and a bottom surface. Next, the insulator layer is thickened. At least one of a contoured top surface and a contoured bottom surface of the insulator layer is created. Finally, the structure is annealed to further thicken and contour the insulator layer.
- Another exemplary process for manufacturing a silicon-on-insulator wafer according to the present invention also comprises the initial step of providing a silicon substrate. Again, an oxide insulator layer is formed across the wafer, the insulator layer being buried within the silicon - substrate, dividing the silicon substrate from a top silicon layer, and having a top surface and a bottom surface. Next, the insulator layer is thickened. The chip periodicity for the wafer is generated and the coordinates are set where a predetermined topography of the buried oxide insulator layer is desired. The coordinates are transferred to an oxygen implanter for implementation. The energy, dose, or temperature of the oxygen implant are adjusted with the implanter scanning and the wafer tilting or rotating according to preset coordinates from the chip periodicity map at the predetermined thicknesses and contours required. Created is at least one of a contoured top surface and a contoured bottom surface of the insulator layer. Finally, the structure is annealed to further thicken and contour the insulator layer.
- The invention is best understood from the following detailed description when read in connection with the accompanying drawing. It is emphasized that, according to common practice, the various features of the drawing are not to scale. On the contrary, the dimensions of the various features are arbitrarily expanded or reduced for clarity. Included in the drawing are the following figures:
-
Fig. 1A illustrates a conventional p-well bulk CMOS process; -
Fig. 1B illustrates a conventional mesa-isolated silicon-on-insulator CMOS process; -
Fig. 2 illustrates a conventional apparatus for the formation of a SIMOX wafer; -
Fig. 3 illustrates an insulator layer of a SOI wafer according to the present invention with a convex top surface; -
Fig. 4 illustrates an insulator layer according to the present invention with a top surface having alternating convex regions and substantially flat regions; -
Fig. 5 illustrates an insulator layer of a SOI wafer according to the present invention with a concave top surface; -
Fig. 6 illustrates an insulator layer according to the present invention with a top surface having alternating concave regions and substantially flat regions; -
Fig. 7 illustrates an insulator layer according to the present invention with a patterned topography (both top and bottom surfaces) of controlled thickness and blended profile variations; -
Fig. 8 illustrates an oxygen implanter constructed and configured to tilt, rotate, and both tilt and rotate the wafer to achieve the desired topography of the insulator layer according to the present invention; and -
Fig. 9 further illustrates the tilt angle and the rotation angle of a wafer according to the present invention. - Referring now to the drawing, in which like reference numbers refer to like elements throughout the various figures that comprise the drawing,
Fig. 2 shows a conventional apparatus for the formation of aSIMOX wafer 10. The creation of a buriedinsulator layer 2 of silicon dioxide (SiO2) by implanting oxygen into asilicon substrate 4 through the SIMOX process is one of the main commercial techniques for creating SOI structures. Atop silicon layer 6 resides on theinsulator layer 2. - The technique requires a high dose (- 2 x 1018 cm-2) of oxygen (O+)
ions 22 from animplantation source 20; this dose provides the minimum concentration necessary to ensure that a continuous layer of stoichiometric silicon dioxide will be formed by reaction of the oxygen with silicon during the annealing process. The energy of the implant must also be high enough (150-180 keV) that the peak of the implant is sufficiently deep within the silicon (0.3-0.5 mm). The wafer is normally heated to more than 400°C during the implantation process to ensure that the surface maintains its crystallinity during the high-dose implantation step. - A post-implant anneal is performed in a neutral ambient 30 such as N2 or in O2 to a sufficient time (3-5 hours) and at a high enough temperature (1,100-1,500°C) to form a buried layer of silicon dioxide. The anneal step also allows excess oxygen in the surface silicon to out-diffuse, thereby increasing the dielectric strength of the buried oxide ("BOX") layer. After the anneal step, the crystalline-silicon surface is typically thin (about 100-300 nm). Therefore, an additional layer of epitaxial silicon is usually deposited so that single-crystal device regions ≥ 0.5 mm thick are available for fabricating devices.
- The Table provided below summarizes data obtained using a scanning electron microscope ("SEM") to measure cross-sections on
sample SOI wafers 10 manufactured using the SIMOX process. The data include thicknesses of buriedinsulator layers 2 and silicon-on-insulator layers 6 obtained with five different oxygen implant sequences while holding the anneal constant (at 1,450°C). The examples are included to more clearly demonstrate the overall nature of the invention. These examples are exemplary, not restrictive, of the invention.Dose Energy Twist Temp. Avg BOX SOI Total Oxide Depth Bottom of BOX 1st 1.25E+017 178K 20 Deg. 365C 2nd 1.45E+017 178K 200 Deg. 365C 1.25E+017 178K 200 Deg. 365C 1.05E+017 178K 200 Deg. 365C 3rd 2.00E+015 165K 20 Deg. Room 1382 678 2060 1.00E+015 163K 20 Deg. Room 1312 663 1975 2.00E+015 161K 20 Deg. Room 1234 616 1850 1450C Anneal 1st 1.25E+017 169K 20 Deg. 365C 2nd 1.25E+017 169K 200 Deg. 365C 1.05E+017 169K 200 Deg. 365C 3rd 2.00E+015 157K 20 Deg. Room 1339 484 1823 1.5E+015 157K 20 Deg. Room 1210 429 1639 1450C Anneal - In summary, a
SOI wafer 10 is a structure in which a buriedinsulator layer 2 electrically isolates asilicon layer 6 from asilicon substrate 4. The buriedinsulator layer 2 does not always occupy theentire silicon substrate 4. Often, theinsulator layer 2 occupies a portion of thesilicon substrate 4. Regardless, theconventional SOI wafer 10 includes aninsulator layer 2 having a substantially flattop surface 8 and a substantiallyflat bottom surface 12. The thickness uniformity specification for aflat insulator layer 2 is usually ±1%, although the degree of flatness can vary randomly across the wafer surface. SIMOX has some advantages over other SOI technologies. Perhaps the most important advantage is that the technology is transparent to the manufacturing line; the fabrication of SIMOX-based circuits uses processing steps similar to those used in conventional IC manufacturing. The SIMOX process does have some drawbacks, however, and the present invention is not limited to that specific process. For example, the SIMOX process requires the availability of a special oxygen implanter. High-beam-current implanter machines are necessary to make high-volume production of wafers more feasible. Implantation parameters and anneal schedules must be chosen appropriately to provide optimum IC performance because the microstructure of the surface-silicon film is sensitive to the oxygen dose and the post-oxygen implant annealing temperature. For example, a lower dose of oxygen results in a higher oxygen content in the silicon film and a higher density of oxygen precipitates at the silicon-film/buried oxide interface following an anneal at 1,150°C. For oxygen doses of 2.25 x 1018 cm-2, thermal annealing at 1,275°C annihilates the oxygen precipitates in the silicon film. - It has been discovered that, all other conditions being equal, the same chips built on and across an SOI wafer do not display the same electrical and physical characteristics expected from them. Rather, the chips suffer performance loss due to leakage from the
top silicon layer 6 to thesilicon substrate 4 through theinsulator layer 2. It has further been discovered that some performance losses can be avoided if the buriedinsulator layer 2 is purposefully not made flat. Thus, according to the present invention, the topography of the buriedinsulator layer 2 is patterned or altered to achieve a variety of advantages relative to the conventional, substantially flat buried oxide layer. Several specific embodiments of the topography are presented below for purposes of illustration. The embodiments may be combined across a wafer. The controlled and patterned topography can be applied to one or both sides (i.e., the top and bottom) of theinsulator layer 2. - 1. Convex Contour The lithographic process window is most affected by wafer topography which displays a significant center-to-edge delta. The lithographic process is also affected by the top-center photoresist location during coating which usually leaves the resist somewhat thinner in the center region of the wafer. The'thinner center region causes features to shrink, flop over for the gate, or leave imperfect resist side wall profiles--risking implant and therefore device inaccuracies.
In addition, various oxide charging and internal arcing mechanisms caused by processing may eventually thin theinsulator layer 2--especially at the center of thewafer 10. Theinsulator layer 2 usually does not retain its uniform flatness during extensive semiconductor processing; rather, theinsulator layer 2 becomes thinner and thinner in the center region of thewafer 10 compared to the edge throughout processing while not being directly exposed a large majority (99%) of the time. Such thinning causes a degradation in performance.
In a first embodiment of the present invention, the top 8a of the buriedinsulator layer 2 is given a contoured convex shape as illustrated inFig. 3 . Theinsulator layer 2 may be made of any minimum thickness at the edge and maximum thickness at the center region of anySOI wafer 10 of any diameter. One important advantage of the convex shape is that it anticipates and compensates for the implicit central thinning of theinsulator layer 2. Even a relatively mild tapering across the wafer can go a long way in anticipating the seemingly inevitable thinning.
An exemplary process to obtain the uniformly contoured convex shape of the top 8a of theinsulator layer 2 of theSOI wafer 10 uses existing technology: a single crystal silicon wafer of any dimension and thickness, a qualified oxygen implanter, and a qualified oxygen anneal furnace. The first step of the process forms the deepest buriedoxide insulator layer 2 uniformly across thewhole wafer 10. Next, one or more of the implant dose, energy, and temperature is or are reduced to thicken this layer across the whole wafer. Then one or more of the implant dose, energy, and temperature is or are reduced to thicken this layer across a preset diameter that is less than the wafer diameter itself. It is this step of the process that initially creates the contoured convex shape of the top 8a. Finally, the wafer is annealed in an oxygen ambient to further thicken and contour the buriedinsulator layer 2 into a convex shape.
This process yields auniform insulator layer 2 formed within a singlecrystal silicon wafer 10 by oxygen implanting. The thickness of the buriedinsulator layer 2 can be increased by adjusting the energy, dose, or temperature of the oxygen implant. The annealing step also contributes to the final shape of theinsulator layer 2. As illustrated inFig. 4 , the process can be tailored to achieve a contoured pattern for the top 8b of theinsulator layer 2 having alternating convex regions and substantially flat regions. - 2. Concave Contour The charge trapped and built up both within and at the silicon interfaces of the buried
insulator layer 2 within the silicon-on-insulator wafer 10 during various manufacturing steps eventually causes voltage breakdowns. The severity of such breakdowns depends on the thickness of theinsulator layer 2 itself. In order to address the problem of voltage breakdowns, a buriedinsulator layer 2 having a uniformly contoured concave top 8c is provided. Such a structure is illustrated inFig. 5 . The top 8c may have any maximum thickness at the edge of theSOI wafer 10 of any diameter. The contoured concave top 8c helps to funnel the unwanted charge towards the edges of thewafer 10 where not as many chips are printed as on the rest of thewafer 10.
An exemplary process to obtain the uniformly contoured concave shape of the top 8c of theinsulator layer 2 of theSOI wafer 10 uses existing technology: a single crystal silicon wafer of any dimension and thickness, a qualified oxygen implanter, and a qualified oxygen anneal furnace. The first step of the process forms the deepest buriedoxide insulator layer 2 uniformly across thewhole wafer 10. Next, one or more of the implant dose, energy, and temperature is or are reduced to thicken this layer across the whole wafer. Then one or more of the implant dose, energy, and temperature is or are reduced to thicken this layer around thewafer 10 in a donut area the outer diameter of which cannot exceed the diameter of thewafer 10 and the interior diameter of which must be greater than zero. The implanter may be adjusted to scan only the donut region around thewafer 10 within preset diameters. It is this step of the process that initially creates the contoured concave shape of the top 8c. Finally, the wafer is annealed in an oxygen ambient to further thicken and contour the buriedinsulator layer 2 into a concave shape.
This process yields auniform insulator layer 2 formed within a singlecrystal silicon wafer 10 by oxygen implanting. The thickness of the buriedinsulator layer 2 can be increased by adjusting the energy, dose, or temperature of the oxygen implant. The annealing step also contributes to the final shape of theinsulator layer 2. As illustrated inFig. 6 , the process can be tailored to achieve a contoured pattern for the top 8d of theinsulator layer 2 having alternating concave regions and substantially flat regions. - 3. Patterned and Blended Contour In order to address the various problems discussed above, a buried
insulator layer 2 having a patterned topography of controlled thickness and blended profile variations is provided. Such a structure is illustrated inFig. 7 . The top 8e of theinsulator layer 2 may have any combination of convex, concave, and substantially flat portions. Similarly, the bottom 12e of theinsulator layer 2 may have any combination of convex, concave, and substantially flat portions. The top 8e and bottom 12e of theinsulator layer 2 define between them a varying thickness for theinsulator layer 2. The particular location and length of a specific contoured portion of the top 8e and bottom 12e are selected to achieve desired performance parameters for thewafer 10.
An exemplary process to obtain the patterned topography of controlled thickness and blended profile variations for theinsulator layer 2 of theSOI wafer 10 uses specifically designed manufacturing equipment. Such equipment is illustrated inFigs. 8 and 9 . As shown inFig. 8 , anoxygen implanter 50 is constructed and configured to tilt, rotate, or both tilt and rotate thewafer 10. Such animplanter 50 allows the manufacturer to specify the angle at which theion implant beam 42 from theion source 40 impinges on thewafers 10 positioned on animplanter wheel 44.
Thewafers 10 are notch oriented (twist) on theimplanter wheel 44. Theimplanter wheel 44 rotates in the direction ofarrow 46, namely clockwise, at a specified speed (e.g., 200 rpm). The scan directions for theion implant beam 42 are depicted by thedirection arrows 48 inFig. 8 . Thus, provided according to the present invention is a high-energy, high-current oxygen implanter 50 able to tilt and rotatewafers 10 with the maneuverability to execute such tilting and rotating actions at pre-programmed intervals during scanning. Theoxygen implanter 50 can also be qualified, of course, to generate a flat buriedoxide insulator layer 2 within a singlecrystal silicon wafer 10 like conventional or "regular" implanters.
Fig. 9 further illustrates the tilt angle θ and the rotation angle φ of awafer 10 according to the present invention. The tilt angle θ is measured relative to the <100> direction perpendicular to the surface of a (100)silicon wafer 10. The angle results from tilting thewafer 10 about an axis located at and parallel to the <110> wafer flat. The rotation angle φ measures the rotation of thewafer 10 about an axis perpendicular to the center of thewafer 10. These two angles together specify the angle at which theion implant beam 42 impinges on thewafer 10.
The first step of the manufacturing process forms an initial buriedoxide insulator layer 2 on thewafer 10. Next, one or more of the implant dose, energy, and temperature is or are reduced to thicken this layer across thewhole wafer 10. Then one or more of the implant dose, energy, and temperature is or are reduced to selectively pattern the buriedinsulator layer 2 with topography at predetermined coordinates. It is this step of the process that initially creates the patterned topography of controlled thickness and blended profile variations of the top 8e and bottom 12e. Finally, the wafer is annealed in an oxygen ambient to further define the shape of the buriedinsulator layer 2.
The process may advantageously include the step of generating the chip periodicity for the wafer and setting the coordinates where a predetermined topography of the buriedoxide insulator layer 2 is desired. This information can then be transferred to theimplanter 50 for implementation. The step of initiating the creation of the topography of the buriedoxide insulator layer 2 by adjusting the energy, dose, or temperature of the oxygen implant can be done with the implanter scanning and thewafer 10 tilting or rotating according to preset coordinates from the chip periodicity map at the predetermined thicknesses and contours required by the structures to be built.
The oxygen implant doses, energies, and temperatures are adjusted to eliminate any silicon islands that may be lingering within the buriedoxide insulator layer 2 that is being created. Furnace anneal temperatures and the percentage of oxygen in the anneal ambient determine the rate of oxygen diffusion from the ambient into thewafer 10. These parameters also determine the final thickness and the smoothness of the oxide-silicon interface.
This process yields aninsulator layer 2 formed within a singlecrystal silicon wafer 10 by oxygen implanting. The thickness of the buriedinsulator layer 2 can be increased by adjusting the energy, dose, or temperature of the oxygen implant. The annealing step also contributes to the final shape of theinsulator layer 2. - 4. Industrial Applicability Especially as the technology matures, the process of selectively generating predetermined topographies on the insulator layer of an SOI wafer either across the whole wafer or in a repeating pattern based on a chip periodicity map of the wafer may be very useful in a number of applications. The present invention will be able to support both traditional and newer applications in semiconductor processing. Specifically, the invention may offer advantages for CMOS, bio chips, and other semiconductor devices. Even more specifically, the present invention may permit further reduction of the gate length.
- In addition, it is desired to widen the normally narrow lithographic process window for critical dimensions across the SOI wafer. Known approaches directed toward that goal include multiple re-compensating of photomasks, photoresist system switches, and possibly the use of elaborate and involved secondary silicon growth schemes. Each approach has its own drawbacks. For a given mask set, the lithographic and other physical and electrical process windows can be widened by control and optimization of the buried insulator layer on SOI wafers according to the present invention. The invention can be adapted for all types, thicknesses, diameters, and other specifications of SOI wafers.
- The thickness of the top silicon layer of the SOI structure is dictated by the target electrical performance. The thickness of the insulator layer under the top silicon layer, although not arbitrary, is not as critical as that of the top silicon layer. The reflective properties of the insulator layer can be used to optimize the numerical aperture and sigma of the lens of the lithography tool to keep the focus window as wide as possible. Current manufacturing processes simply target a uniform thickness across the SOI wafer.
- The invention is also useful for optical switching especially in micro-electro-mechanical ("MEMS') systems. The curved shape of the insulator layer allows the switch to gather more light; therefore, the switch becomes faster. MEMS manufacturing is changing from bulk silicon wafers to SOI wafers due to the beneficial dielectric isolation provided by the buried oxide insulator layer within the SOI wafer. The insulator layer is also used as an etch stop for both wet and dry etching of silicon from either side of the wafer to form and define the shapes of micro structures with flat surfaces that could also selectively benefit from curved surfaces in applications like the formation of mirrors in MEMS optical switches.
- Thus, one particular example where a need for the present invention currently exists involves the mirrors generated in MEMS optical switches. When these arrays are formed on single crystal SOI wafers as part of a fiber optic switch, each mirror has a diameter or edges of 50 mm or more, and the array can be 1,000 x 1,000. With the demand for optical bandwidth deemed to be doubling every nine months according to a 2001 survey, the need to keep the free light beams intact without any loss of signal is challenging; expensive amplification methods are usually needed after the switch. Currently, the mirrors formed on SOI wafers are substantially flat on top, which is what is typically desired, and substantially flat on the bottom because they have been defined on a flat BOX insulator layer.
- This flatness helps with accuracy in terms of direction but cannot prevent the light beam from widening and becoming less defined. A local contoured topography of the buried oxide isolation layer underneath the area and volume of the SOI designated to be etched into a mirror simultaneously contours that area of the single crystal silicon itself. This topography allows a mirror to assume a concave surface to re-focus the weakened light beam at periodic intervals. Alternatively, the topography allows the mirror and the optical designers to send the light beam in two different directions by assuming a convex surface, allowing the formation of arrays in asymmetrical configurations. Variations in the BOX insulator layer thickness can also help create beams of various lengths.
Claims (12)
- A process for manufacturing a silicon-on-insulator wafer (10) comprising the steps of:(a) providing a silicon substrate (4);(b) forming an oxide insulator layer (2) across the wafer (10) by oxygen implantation, the insulator layer (2) being buried within the silicon substrate (4), dividing the silicon substrate (4) from a top silicon layer (6), and having a top surface (8) and a bottom surface (12);(c) during said implantation, thickening the insulator layer (2) by reducing one or more of the implant dose, energy, and temperature;(d) during said implantation, creating at least one of a contoured top surface (8a, 8b, 8c, 8d, 8e) and a contoured bottom surface (12e) of the insulator layer (2); and(e) annealing to further thicken and contour the insulator layer (2) ;characterised in that the step (d) of creating at least one of a contoured top surface (8a, 8b, 8c, 8d, 8e) and a contoured bottom surface (12e) of the insulator layer (2) comprises the steps of:(d1) generating the chip periodicity for the wafer (10) and setting the coordinates where a predetermined topography of the buried oxide insulator layer (2) is desired;(d2) transferring the coordinates to an oxygen implanter (50) for ; implantation(d3) adjusting the energy, dose, or temperature of the oxygen implant with the implanter (50) scanning and the wafer (10) tilting or rotating according to preset coordinates from the chip periodicity map at the predetermined thicknesses and contours required, thereby creating at least one of a contoured top surface (8a, 8b, 8c, 8d, Be) and a contoured bottom surface (12e) of the insulator layer (2).
- A process as claimed in claim 1 wherein the step (b) of forming an oxide insulator layer (2) across the wafer (10) is accomplished using a qualified oxygen implanter (50).
- A process as claimed in claim 1 wherein the step (e) of annealing is an oxygen anneal.
- A process as claimed in claim 1 wherein the at least one contoured surface is uniformly convex.
- A process as claimed in claim 1 wherein the step (b) of forming an oxide insulator layer (2) across the wafer (10) is accomplished using a qualified oxygen implanter (50) and the step (d) of creating the at least one uniformly convex surface includes reducing one or more of the implant dose, energy, and temperature to thicken the insulator layer (2) across a preset diameter that is less than the diameter of the wafer (10).
- A process as claimed in claim 1 wherein the at least one contoured surface has alternating convex and substantially flat regions.
- A process as claimed in claim 1 wherein the at least one contoured surface is uniformly concave.
- A process as claimed in claim 1 wherein the step (b) of forming an oxide insulator layer (2) across the wafer (10) is accomplished using a qualified oxygen implanter (50) and the step (d) of creating the at least one uniformly concave surface includes reducing one or more of the implant dose, energy, and temperature to thicken the insulator layer (2) around the wafer (10) in a donut area having an outer diameter not exceeding the diameter of the wafer (10) an interior diameter greater than zero.
- A process as claimed in claim 8 further comprising adjusting the implanter (50) to scan only the donut region around the wafer (10) within preset diameters.
- A process as claimed in claim 1 wherein the at least one contoured surface has alternating concave and substantially flat regions.
- A process as claimed in claim 1 wherein the at least one contoured surface includes a combination of convex, concave, and substantially flat portions.
- A process as claimed in claim 1 wherein the step (b) of forming an oxide insulator layer (2) across the wafer (10) is accomplished using a qualified oxygen implanter (50) and the step (d) of creating the at least one contoured surface includes reducing one or more of the implant dose, energy, and temperature to selectively pattern the buried insulator layer (2) with topography at predetermined coordinates.
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-
2003
- 2003-12-16 EP EP03819163A patent/EP1695379B1/en not_active Expired - Lifetime
- 2003-12-16 WO PCT/US2003/040079 patent/WO2005062364A1/en active Search and Examination
- 2003-12-16 CN CNB2003801108263A patent/CN100466203C/en not_active Expired - Fee Related
- 2003-12-16 US US10/596,569 patent/US7935613B2/en not_active Expired - Fee Related
- 2003-12-16 AU AU2003297191A patent/AU2003297191A1/en not_active Abandoned
- 2003-12-16 JP JP2005512434A patent/JP4701085B2/en not_active Expired - Fee Related
- 2003-12-16 KR KR1020067011646A patent/KR100956711B1/en not_active IP Right Cessation
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EP1695379A4 (en) | 2008-06-04 |
JP2007524981A (en) | 2007-08-30 |
US8405150B2 (en) | 2013-03-26 |
CN100466203C (en) | 2009-03-04 |
US20110101490A1 (en) | 2011-05-05 |
KR100956711B1 (en) | 2010-05-06 |
KR20060118548A (en) | 2006-11-23 |
US7935613B2 (en) | 2011-05-03 |
CN1879206A (en) | 2006-12-13 |
US20100013044A1 (en) | 2010-01-21 |
WO2005062364A1 (en) | 2005-07-07 |
EP1695379A1 (en) | 2006-08-30 |
AU2003297191A1 (en) | 2005-07-14 |
JP4701085B2 (en) | 2011-06-15 |
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