EP1743405A4 - Very high energy, high stability gas discharge laser surface treatment system - Google Patents

Very high energy, high stability gas discharge laser surface treatment system

Info

Publication number
EP1743405A4
EP1743405A4 EP04821542A EP04821542A EP1743405A4 EP 1743405 A4 EP1743405 A4 EP 1743405A4 EP 04821542 A EP04821542 A EP 04821542A EP 04821542 A EP04821542 A EP 04821542A EP 1743405 A4 EP1743405 A4 EP 1743405A4
Authority
EP
European Patent Office
Prior art keywords
surface treatment
treatment system
gas discharge
laser surface
discharge laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04821542A
Other languages
German (de)
French (fr)
Other versions
EP1743405A2 (en
Inventor
Palash P Das
Bruce E Bolliger
Parthiv Patel
Brian C Klene
Paul C Melcher
Robert B Saethre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCZ Pte Ltd
Original Assignee
TCZ Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/631,349 external-priority patent/US7039086B2/en
Priority claimed from US10/781,251 external-priority patent/US7167499B2/en
Application filed by TCZ Pte Ltd filed Critical TCZ Pte Ltd
Publication of EP1743405A2 publication Critical patent/EP1743405A2/en
Publication of EP1743405A4 publication Critical patent/EP1743405A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0057—Temporal shaping, e.g. pulse compression, frequency chirping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2253—XeCl, i.e. xenon chloride is comprised for lasing around 308 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA
    • H01S3/2325—Multi-pass amplifiers, e.g. regenerative amplifiers
    • H01S3/2333—Double-pass amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2366—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media comprising a gas as the active medium
EP04821542A 2003-07-30 2004-07-26 Very high energy, high stability gas discharge laser surface treatment system Withdrawn EP1743405A4 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/631,349 US7039086B2 (en) 2001-04-09 2003-07-30 Control system for a two chamber gas discharge laser
US72299203A 2003-11-26 2003-11-26
US10/781,251 US7167499B2 (en) 2001-04-18 2004-02-18 Very high energy, high stability gas discharge laser surface treatment system
PCT/US2004/024160 WO2005094205A2 (en) 2003-07-30 2004-07-26 Very high energy, high stability gas discharge laser surface treatment system

Publications (2)

Publication Number Publication Date
EP1743405A2 EP1743405A2 (en) 2007-01-17
EP1743405A4 true EP1743405A4 (en) 2009-11-11

Family

ID=35064205

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04821542A Withdrawn EP1743405A4 (en) 2003-07-30 2004-07-26 Very high energy, high stability gas discharge laser surface treatment system

Country Status (4)

Country Link
EP (1) EP1743405A4 (en)
JP (2) JP2007515774A (en)
KR (1) KR101123820B1 (en)
WO (1) WO2005094205A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7491954B2 (en) * 2006-10-13 2009-02-17 Cymer, Inc. Drive laser delivery systems for EUV light source
JP2009246345A (en) * 2008-03-12 2009-10-22 Komatsu Ltd Laser system
KR101742715B1 (en) * 2008-10-21 2017-06-01 사이머 엘엘씨 Method and apparatus for laser control in a two chamber gas discharge laser
NL2003777A (en) * 2009-01-08 2010-07-13 Asml Netherlands Bv Laser device.
WO2020236647A1 (en) * 2019-05-22 2020-11-26 Cymer, Llc Apparatus for and method of generating multiple laser beams
CN116776478B (en) * 2023-08-23 2023-11-28 武汉嘉晨电子技术有限公司 Compression rate matching method for BDU buffer cushion and heat conducting pad of automobile

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5329398A (en) * 1992-11-05 1994-07-12 Novatec Laser Systems, Inc. Single grating laser pulse stretcher and compressor
US6014401A (en) * 1995-08-11 2000-01-11 Societe De Production Et De Recherches Appliquees Device for controlling a laser source with multiple laser units for the energy and spatial optimization of a laser surface treatment
US6143661A (en) * 1994-11-18 2000-11-07 Semiconductor Energy Laboratory Co., Ltd. Method of processing semiconductor device with laser
US20020154668A1 (en) * 1999-12-10 2002-10-24 Knowles David S. Very narrow band, two chamber, high rep rate gas discharge laser system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5991324A (en) * 1998-03-11 1999-11-23 Cymer, Inc. Reliable. modular, production quality narrow-band KRF excimer laser
US6801560B2 (en) * 1999-05-10 2004-10-05 Cymer, Inc. Line selected F2 two chamber laser system
US8776146B2 (en) * 2004-12-28 2014-07-08 Livetv, Llc Aircraft in-flight entertainment system including a distributed digital radio service and associated methods

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5329398A (en) * 1992-11-05 1994-07-12 Novatec Laser Systems, Inc. Single grating laser pulse stretcher and compressor
US6143661A (en) * 1994-11-18 2000-11-07 Semiconductor Energy Laboratory Co., Ltd. Method of processing semiconductor device with laser
US6014401A (en) * 1995-08-11 2000-01-11 Societe De Production Et De Recherches Appliquees Device for controlling a laser source with multiple laser units for the energy and spatial optimization of a laser surface treatment
US20020154668A1 (en) * 1999-12-10 2002-10-24 Knowles David S. Very narrow band, two chamber, high rep rate gas discharge laser system

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
BIJKERK F ET AL: "Characterization of a novel two-stage KrF laser with high pulse energy and low beam divergence", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, SPIE, PO BOX 10 BELLINGHAM WA 98227-0010 USA, vol. 1810, 1 January 1993 (1993-01-01), pages 462 - 466, XP002473629, ISSN: 0277-786X *

Also Published As

Publication number Publication date
JP2007515774A (en) 2007-06-14
KR101123820B1 (en) 2012-03-15
KR20060052927A (en) 2006-05-19
WO2005094205A2 (en) 2005-10-13
EP1743405A2 (en) 2007-01-17
WO2005094205A3 (en) 2007-08-09
JP2012191207A (en) 2012-10-04

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Legal Events

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DAX Request for extension of the european patent (deleted)
RBV Designated contracting states (corrected)

Designated state(s): DE FR GB NL

RIN1 Information on inventor provided before grant (corrected)

Inventor name: SAETHRE, ROBERT, B.

Inventor name: MELCHER, PAUL, C.

Inventor name: KLENE, BRIAN, C.

Inventor name: PATEL, PARTHIV

Inventor name: BOLLIGER, BRUCE, E.

Inventor name: DAS, PALASH, P.

RIC1 Information provided on ipc code assigned before grant

Ipc: H01S 3/10 20060101AFI20070418BHEP

PUAK Availability of information related to the publication of the international search report

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