EP1825516A2 - Gatter aus organischen feldeffekttransistoren - Google Patents
Gatter aus organischen feldeffekttransistorenInfo
- Publication number
- EP1825516A2 EP1825516A2 EP05850139A EP05850139A EP1825516A2 EP 1825516 A2 EP1825516 A2 EP 1825516A2 EP 05850139 A EP05850139 A EP 05850139A EP 05850139 A EP05850139 A EP 05850139A EP 1825516 A2 EP1825516 A2 EP 1825516A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- electronic component
- field effect
- effect transistors
- component according
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/20—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising components having an active region that includes an inorganic semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004059467A DE102004059467A1 (de) | 2004-12-10 | 2004-12-10 | Gatter aus organischen Feldeffekttransistoren |
PCT/DE2005/002195 WO2006061000A2 (de) | 2004-12-10 | 2005-12-06 | Gatter aus organischen feldeffekttransistoren |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1825516A2 true EP1825516A2 (de) | 2007-08-29 |
Family
ID=36578264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP05850139A Withdrawn EP1825516A2 (de) | 2004-12-10 | 2005-12-06 | Gatter aus organischen feldeffekttransistoren |
Country Status (11)
Country | Link |
---|---|
US (1) | US20080197343A1 (de) |
EP (1) | EP1825516A2 (de) |
JP (1) | JP2008523595A (de) |
KR (1) | KR20070085953A (de) |
CN (1) | CN101076893A (de) |
AU (1) | AU2005313714A1 (de) |
CA (1) | CA2595114A1 (de) |
DE (1) | DE102004059467A1 (de) |
MX (1) | MX2007006725A (de) |
TW (1) | TWI333701B (de) |
WO (1) | WO2006061000A2 (de) |
Families Citing this family (18)
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JP3895358B2 (ja) | 2003-05-16 | 2007-03-22 | 株式会社ジャパン・ウェーブ | デジタルコンテンツの不正使用防止システム、再生装置およびデジタルコンテンツの不正再生防止方法 |
JP2008010566A (ja) * | 2006-06-28 | 2008-01-17 | Ricoh Co Ltd | 半導体デバイス |
DE102006037433B4 (de) | 2006-08-09 | 2010-08-19 | Ovd Kinegram Ag | Verfahren zur Herstellung eines Mehrschichtkörpers sowie Mehrschichtkörper |
KR100790761B1 (ko) * | 2006-09-29 | 2008-01-03 | 한국전자통신연구원 | 인버터 |
JP5104057B2 (ja) * | 2007-06-21 | 2012-12-19 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US20090004368A1 (en) * | 2007-06-29 | 2009-01-01 | Weyerhaeuser Co. | Systems and methods for curing a deposited layer on a substrate |
TWI412125B (zh) | 2007-07-17 | 2013-10-11 | Creator Technology Bv | 電子元件及電子元件之製法 |
US20090165056A1 (en) * | 2007-12-19 | 2009-06-25 | General Instrument Corporation | Method and apparatus for scheduling a recording of an upcoming sdv program deliverable over a content delivery system |
US7704786B2 (en) | 2007-12-26 | 2010-04-27 | Organicid Inc. | Printed organic logic circuits using a floating gate transistor as a load device |
US7888169B2 (en) * | 2007-12-26 | 2011-02-15 | Organicid, Inc. | Organic semiconductor device and method of manufacturing the same |
US8463116B2 (en) * | 2008-07-01 | 2013-06-11 | Tap Development Limited Liability Company | Systems for curing deposited material using feedback control |
JP2010034343A (ja) * | 2008-07-30 | 2010-02-12 | Sumitomo Chemical Co Ltd | 半導体装置の製造方法および半導体装置 |
DE102009012302A1 (de) * | 2009-03-11 | 2010-09-23 | Polyic Gmbh & Co. Kg | Elektronisches Bauelement |
JP5548976B2 (ja) * | 2009-06-25 | 2014-07-16 | セイコーエプソン株式会社 | 半導体装置 |
JP5558222B2 (ja) * | 2010-06-18 | 2014-07-23 | シャープ株式会社 | 薄膜トランジスタ基板の製造方法 |
CN107104188A (zh) * | 2017-04-20 | 2017-08-29 | 上海幂方电子科技有限公司 | 有机互补型非门器件的制备方法 |
CN109920922B (zh) * | 2017-12-12 | 2020-07-17 | 京东方科技集团股份有限公司 | 有机发光器件及其制备方法、显示基板、显示驱动方法 |
CN113130661A (zh) * | 2021-04-19 | 2021-07-16 | 湖南大学 | 一种无屏蔽三栅晶体管器件和基于其的电阻型全摆幅反相器 |
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-
2004
- 2004-12-10 DE DE102004059467A patent/DE102004059467A1/de not_active Ceased
-
2005
- 2005-12-06 MX MX2007006725A patent/MX2007006725A/es not_active Application Discontinuation
- 2005-12-06 KR KR1020077013005A patent/KR20070085953A/ko not_active Application Discontinuation
- 2005-12-06 CN CNA200580042446XA patent/CN101076893A/zh active Pending
- 2005-12-06 AU AU2005313714A patent/AU2005313714A1/en not_active Abandoned
- 2005-12-06 US US11/721,244 patent/US20080197343A1/en not_active Abandoned
- 2005-12-06 EP EP05850139A patent/EP1825516A2/de not_active Withdrawn
- 2005-12-06 JP JP2007544729A patent/JP2008523595A/ja active Pending
- 2005-12-06 WO PCT/DE2005/002195 patent/WO2006061000A2/de active Application Filing
- 2005-12-06 CA CA002595114A patent/CA2595114A1/en not_active Abandoned
- 2005-12-07 TW TW094143111A patent/TWI333701B/zh not_active IP Right Cessation
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US20080197343A1 (en) | 2008-08-21 |
CA2595114A1 (en) | 2006-06-15 |
JP2008523595A (ja) | 2008-07-03 |
WO2006061000A2 (de) | 2006-06-15 |
DE102004059467A1 (de) | 2006-07-20 |
TWI333701B (en) | 2010-11-21 |
CN101076893A (zh) | 2007-11-21 |
MX2007006725A (es) | 2007-07-25 |
AU2005313714A1 (en) | 2006-06-15 |
TW200640050A (en) | 2006-11-16 |
KR20070085953A (ko) | 2007-08-27 |
WO2006061000A3 (de) | 2006-08-24 |
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