EP1921640A1 - Spiral-shaped closed magnetic core and integrated micro-inductance comprising such a closed magnetic core - Google Patents
Spiral-shaped closed magnetic core and integrated micro-inductance comprising such a closed magnetic core Download PDFInfo
- Publication number
- EP1921640A1 EP1921640A1 EP07354060A EP07354060A EP1921640A1 EP 1921640 A1 EP1921640 A1 EP 1921640A1 EP 07354060 A EP07354060 A EP 07354060A EP 07354060 A EP07354060 A EP 07354060A EP 1921640 A1 EP1921640 A1 EP 1921640A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- magnetic core
- branches
- inductance
- core
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 58
- 238000004804 winding Methods 0.000 description 11
- 239000000696 magnetic material Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000001609 comparable effect Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101100422538 Escherichia coli sat-2 gene Proteins 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 229910003289 NiMn Inorganic materials 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 239000002885 antiferromagnetic material Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0033—Printed inductances with the coil helically wound around a magnetic core
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/04—Fixed inductances of the signal type with magnetic core
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/04—Fixed inductances of the signal type with magnetic core
- H01F17/045—Fixed inductances of the signal type with magnetic core with core of cylindric geometry and coil wound along its longitudinal axis, i.e. rod or drum core
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/24—Magnetic cores
- H01F27/25—Magnetic cores made from strips or ribbons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
- H01F41/046—Printed circuit coils structurally combined with ferromagnetic material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Coils Or Transformers For Communication (AREA)
- Switches That Are Operated By Magnetic Or Electric Fields (AREA)
Abstract
Description
L'invention est relative à un noyau magnétique fermé pour une micro-inductance intégrée.The invention relates to a closed magnetic core for integrated micro-inductance.
L'invention s'inscrit dans la thématique des micro-inductances intégrées pour des applications en électronique de puissance. Elle peut, d'une manière plus générale, s'appliquer à tous les systèmes inductifs (inductances, transformateurs, têtes d'enregistrement magnétique, actionneurs, capteurs, etc...) nécessitant une haute densité de puissance électrique.The invention is part of the theme of integrated micro-inductors for applications in power electronics. It can, more generally, apply to all inductive systems (inductors, transformers, magnetic recording heads, actuators, sensors, etc.) requiring a high density of electrical power.
Il existe depuis de nombreuses années des micro-inductances de divers types, utilisant des bobinages de type spirale ou solénoïde. Cependant, les composants discrets restent très majoritairement utilisés dans des applications utilisant de fortes densités de puissance car ils offrent un meilleur compromis entre inductance et courant de saturation.Micro-inductances of various types have existed for many years, using coils of the spiral or solenoid type. However, the discrete components remain very predominantly used in applications using high power densities because they offer a better compromise between inductance and saturation current.
Un bobinage de type spirale avec plan magnétique est facile à intégrer et permet de travailler à de forts courants. Cependant, ce type de dispositif devient très encombrant dès lors que l'on vise de fortes valeurs d'inductance (L de l'ordre du µH), parce qu'il faut un nombre de tours de spirale élevé. De plus, la résistance de tels dispositifs est importante.A spiral winding with magnetic plane is easy to integrate and allows to work with strong currents. However, this type of device becomes very cumbersome when one targets high values of inductance (L of the order of μH), because it takes a number of high spiral turns. In addition, the resistance of such devices is important.
Les micro-inductances intégrées toroïdales avec bobinage solénoïde, ainsi que leurs améliorations en méandres (voir l'article
De plus, la puissance maximale passant dans une inductance est déterminée par le volume de matériau magnétique utilisé dans le cas d'un composant intégré. Ce volume est déterminé par l'épaisseur de matériau magnétique (épaisseurs inférieures à 100 microns pour des composants intégrés) et la surface occupée par ce noyau magnétique.In addition, the maximum power passing through an inductor is determined by the volume of magnetic material used in the case of an integrated component. This volume is determined by the thickness of magnetic material (thicknesses less than 100 microns for integrated components) and the area occupied by this magnetic core.
Les transformateurs et inductances avec noyau magnétique en forme de E ou de E-1 sont très utilisés en électrotechnique, essentiellement dans des transformateurs discrets (et dans les dispositifs de type DC/DC discrets) afin de faciliter l'assemblage et le bobinage des inductances, ou bien pour pouvoir jouer sur les facteurs de conversion entre les trois bobinages de chaque branche, ou sur les effets d'inductances mutuelles entre les bobinages distincts de chaque branche (voir l'article
La plupart des micro-inductances utilisées sur le marché sont des composants discrets fabriqués par des procédés micromécaniques de micro usinage, collage, micro-enroulement, etc... Ces procédés sont lourds à mettre en oeuvre, à traitement individuel, peu flexibles en termes de conception et limitent grandement la miniaturisation des circuits de puissance. En particulier, l'épaisseur des micro-inductances discrètes (typiquement supérieur à 0.5 mm) ne permet pas une mise en boîtier appropriée aux circuits d'alimentation utilisés actuellement pour la téléphonie mobile, par exemple.Most of the micro-inductances used on the market are discrete components manufactured by micromechanical processes of micro-machining, gluing, micro-winding, etc. These processes are heavy to implement, individual treatment, not very flexible in terms of design and greatly limit the miniaturization of power circuits. In particular, the thickness of the discrete micro-inductors (typically greater than 0.5 mm) does not allow appropriate packaging in the power supply circuits currently used for mobile telephony, for example.
Les techniques de fabrications utilisées en microélectronique permettent une flexibilité bien plus grande au niveau de la mise en oeuvre de conceptions différentes, assurent un traitement collectif et sont compatibles avec l'idée de miniaturisation car l'épaisseur (substrat compris) peut facilement être inférieure à 300 µm). Cependant, elles sont mal adaptées au dépôt de fortes épaisseurs (supérieures à 10µm) de matériaux conducteurs, magnétiques ou diélectriques et à leur gravure après photolithographie.The manufacturing techniques used in microelectronics allow a much greater flexibility in the implementation of different designs, provide a collective treatment and are compatible with the idea of miniaturization because the thickness (including substrate) can easily be less than 300 μ m). However, they are poorly suited to deposition of high thicknesses (greater than 10 μm ) of conductive, magnetic or dielectric materials and to their etching after photolithography.
Pour les composants intégrés, on se heurte à des contraintes de réalisation technologique. En effet, des dépôts de couches conductrices ayant une épaisseur supérieure à 100 micromètres ne sont pour l'instant pas envisageable dans un procédé industriel standard.For integrated components, there are constraints of technological achievement. Indeed, deposits of conductive layers having a thickness greater than 100 microns are currently not feasible in a standard industrial process.
L'article
Les micro-inductances intégrées présentent en général une inductance qui diminue fortement lorsque le courant appliqué aux spires de la micro-inductance est augmenté, même pour des courants faibles, ce qui oblige d'utiliser des inductances discrètes non-intégrées, dans certain cas.The integrated micro-inductors generally have an inductance which decreases greatly when the current applied to the turns of the micro-inductor is increased, even for weak currents, which makes it necessary to use unintegrated discrete inductors in certain cases.
Les puces microélectroniques de petites dimensions (quelques millimètres au carré) sont généralement de forme carrée. L'intégration d'inductances impose donc des contraintes que l'on ne connaît pas pour les composants discrets. Les solutions proposées sont donc souvent complexes. Pour les inductances, en particulier, on cherche à minimiser la surface occupée, d'autant plus que le recours aux techniques de dépôt en couches minces limite grandement les épaisseurs utiles. En effet, la puissance d'une inductance Llsat 2 (L étant l'inductance et Isat le courant de saturation) dépend directement du volume de matériau magnétique disponible.Microelectronic chips of small dimensions (a few millimeters squared) are generally square. The integration of inductances therefore imposes constraints that are unknown for discrete components. The proposed solutions are therefore often complex. For inductances, in particular, it is sought to minimize the area occupied, especially since the use of thin film deposition techniques greatly limits the useful thicknesses. Indeed, the power of an inductance Ll sat 2 (where L is the inductance and I sat the saturation current) depends directly on the volume of available magnetic material.
L'objet de l'invention est d'augmenter la compacité d'un noyau d'une micro-inductance intégrée et, pour un encombrement donné, d'augmenter la valeur de l'inductance.The object of the invention is to increase the compactness of a core of an integrated micro-inductance and, for a given size, to increase the value of the inductance.
Selon l'invention, ce but est atteint par un noyau magnétique selon les revendications annexées et plus particulièrement par le fait que le noyau magnétique a une forme de spirale comportant deux extrémités reliées l'une à l'autre par un segment de fermeture.According to the invention, this object is achieved by a magnetic core according to the appended claims and more particularly by the fact that the magnetic core has a spiral shape having two ends connected to one another by a closing segment.
L'invention a également pour but une micro-inductance intégrée comportant un noyau magnétique selon l'invention.The invention also aims an integrated micro-inductance comprising a magnetic core according to the invention.
D'autres avantages et caractéristiques ressortiront plus clairement de la description qui va suivre de modes particuliers de réalisation de l'invention donnés à titre d'exemples non limitatifs et représentés aux dessins annexés, dans lesquels :
- la figure 1 représente, en vue de perspective, un mode de réalisation particulier d'un noyau magnétique fermé selon l'invention,
- les figures 2 à 4 illustrent respectivement, en vue de dessus, deux noyaux magnétiques fermés selon l'art antérieur et un mode de réalisation particulier du noyau magnétique fermé selon l'invention,
- la figure 5 représente, en coupe selon l'axe A-A de la figure 4, un mode de réalisation particulier de l'invention,
- la figure 6 représente, en vue de dessus, un mode de réalisation particulier d'un noyau magnétique fermé selon l'invention,
- la figure 7 illustre un mode de réalisation particulier d'une micro-inductance intégrée selon l'invention.
- FIG. 1 represents, in perspective view, a particular embodiment of a closed magnetic core according to the invention,
- FIGS. 2 to 4 respectively show, in plan view, two closed magnetic cores according to the prior art and a particular embodiment of the closed magnetic core according to the invention,
- FIG. 5 represents, in section along the axis AA of FIG. 4, a particular embodiment of the invention,
- FIG. 6 represents, in top view, a particular embodiment of a closed magnetic core according to the invention,
- FIG. 7 illustrates a particular embodiment of an integrated micro-inductor according to the invention.
Le noyau magnétique 1, représenté sur la figure 1, a une forme de spirale. La spirale comporte deux extrémités 2 reliées l'une à l'autre par un segment de fermeture 3. Ainsi, le noyau magnétique 1 est fermé.The
Sur la figure 1, le noyau magnétique 1 est constitué par un premier jeu 4 de cinq branches parallèles et un second jeu 5 de quatre branches parallèles, sensiblement perpendiculaires aux branches du premier jeu 4. La spirale constituée par l'ensemble des branches des deux jeux 4 et 5 est ainsi rectangulaire. Le raccordement constitué par le segment de fermeture 3 s'ajoute à la spirale pour former le noyau magnétique 1.In FIG. 1, the
Comme illustré par l'intermédiaire des figures 2 à 4, le noyau magnétique 1 permet de maximiser l'occupation de l'espace au centre du noyau 1 et de la micro-inductance correspondante.As illustrated by means of FIGS. 2 to 4, the
On définit une longueur I du noyau magnétique, correspondant à la longueur développée du circuit magnétique, et le nombre N de spires du bobinage entourant le noyau magnétique 1. On peut démontrer, par l'intermédiaire du modèle des réluctances, les expressions suivantes (L étant l'inductance et Isat le courant de saturation) :
Ainsi, pour augmenter la puissance de saturation Psat=LIsat 2 de l'inductance, on cherche à augmenter la longueur I du noyau magnétique. L'inductance L et le courant de saturation Isat résultent ainsi d'un compromis sur le nombre de spires N, qui est d'autant plus grand que la longueur I du noyau est grand.Thus, to increase the saturation power P sat = LI sat 2 of the inductor, it is sought to increase the length I of the magnetic core. The inductance L and the saturation current I sat thus result from a compromise on the number of turns N, which is all the greater as the length I of the core is large.
Une inductance annulaire selon l'art antérieur, représentée à la figure 2, s'adapte particulièrement bien à une puce de forme carrée. La longueur de l'anneau développé dépend du périmètre extérieur de la puce. Cette géométrie ne permet pas d'exploiter la partie centrale de la puce.An annular inductor according to the prior art, shown in Figure 2, adapts particularly well to a square-shaped chip. The length of the developed ring depends on the outer perimeter of the chip. This geometry does not exploit the central part of the chip.
La figure 3 représente une amélioration de l'inductance annulaire, l'inductance en méandres décrite dans l'article de Park précité. L'inductance en méandres permet d'utiliser la zone centrale en étirant l'une des quatre branches de l'anneau de manière à constituer un ou plusieurs méandres couvrant la partie centrale. Cette solution permet d'augmenter la longueur I du noyau à surface constante. En utilisant des règles de conception habituelles, l'occupation de la zone centrale par le noyau en méandres (figure 3) permet d'obtenir un gain sur la longueur I du noyau de l'ordre de 33%, par rapport au noyau annulaire (figure 2). En augmentant le nombre N de spires en fonction de la longueur I du noyau, on obtient un compromis avec un gain sur l'inductance L d'environ 20 % et un gain sur le courant de saturation Isat d'environ 10 %.FIG. 3 represents an improvement in the annular inductance, the meandering inductance described in the aforementioned Park article. The meandering inductance makes it possible to use the central zone by stretching one of the four branches of the ring so as to constitute one or more meanders covering the central part. This solution makes it possible to increase the length I of the constant surface core. By using usual design rules, the occupation of the central zone by the meandering core (FIG. 3) makes it possible to obtain a gain on the length I of the core of the order of 33%, with respect to the annular core ( Figure 2). By increasing the number N of turns according to the length I of the core, a compromise is obtained with a gain on the inductance L of about 20% and a gain on the saturation current I sat of about 10%.
Toutefois, l'inductance sous forme de méandres n'est optimale que dans des cas particuliers où la largeur de l'anneau et la largeur des branches vérifient certaines conditions de géométrie. En effet, la zone centrale doit être suffisamment grande pour permettre l'insertion d'un nombre entier de méandres.However, the meandering inductance is optimal only in special cases where the width of the ring and the width of the branches satisfy certain geometry conditions. Indeed, the central zone must be large enough to allow the insertion of an integer number of meanders.
Comme représenté à la figure 3, le noyau a une largeur globale T, les branches ont une largeur W et l'espacement entre deux branches adjacentes doit être supérieur à un espacement minimum S. Ainsi, pour un nombre Nm de méandres donné, la largeur globale T du noyau doit remplir la condition :
Le rapport du nombre Nm de méandres sur la surface de la zone centrale est maximisé lorsque la partie gauche et la partie droite de l'équation sont égales :
En admettant que la largeur W des branches et l'espacement minimum S sont égaux (S=W) la condition se simplifie :
où T/W est le rapport de la largeur globale T sur la largeur W des branches. Pour T/W=7, 11, 15..., le noyau en méandres permet donc de remplir la zone centrale de façon optimale. Pour T/W=9, 13, 17... cependant, une partie importante de la zone centrale reste inutilisée. La mise en oeuvre de noyaux en méandres est donc restrictive dans la pratique puisque la taille de la puce et la largeur des branches sont en général imposées de façon indépendante. Une partie de la zone centrale peut ainsi rester inutilisée.Assuming that the width W of the branches and the minimum spacing S are equal (S = W) the condition is simplified:
where T / W is the ratio of the overall width T to the width W of the branches. For T / W = 7, 11, 15 ..., the meandering core makes it possible to fill the central zone optimally. For T / W = 9, 13, 17 ... however, some significant amount of the central area remains unused. The implementation of meander cores is therefore restrictive in practice since the size of the chip and the width of the branches are in general imposed independently. Part of the central area can remain unused.
Le noyau magnétique 1 fermé en forme de spirale présente une plus grande indépendance vis-à-vis des contraintes dimensionnelles, et permet ainsi d'optimiser la longueur I du noyau, l'inductance L et le courant de saturation Isat pour une surface donnée quelconque. Comme précédemment, le gain sur la longueur de noyau I et le gain en puissance du noyau en spirale (figure 4) peuvent être évalués vis-à-vis de la structure annulaire de référence (figure 2). Il convient alors de distinguer deux cas :
- Lorsque le rapport T/W équivaut essentiellement à la partie de droite de l'équation ci-dessus, c'est-à-dire lorsque
le noyau en spirale fermé et le noyau en méandres sont comparables, car le gain sur la longueur et le gain sur la puissance sont comparables. - Lorsque l'équation ci-dessus n'est pas vérifiée, le noyau en spirale fermée permet d'obtenir un gain en longueur I et un gain en puissance plus importants que le noyau en méandres, par exemple pour T/W compris entre 8 et 10 (8<T/W<10) ou pour T/W compris entre 12 et 14 (12<T/W<14).
- When the T / W ratio is essentially equivalent to the right-hand part of the equation above, ie when
the closed spiral core and the meandering core are comparable because the gain in length and the gain in power are comparable. - When the above equation is not satisfied, the closed spiral core makes it possible to obtain a greater gain in length I and power gain than the meandering core, for example for T / W between 8 and 10 (8 <T / W <10) or for T / W between 12 and 14 (12 <T / W <14).
En particulier, dans le cas d'un rapport T/W = 9, le noyau en spirale (figure 4) permet d'obtenir 53% de gain sur la longueur I et sur la puissance, par rapport à l'anneau (figure 2).In particular, in the case of a ratio T / W = 9, the spiral core (FIG. 4) makes it possible to obtain 53% gain on the length I and on the power, with respect to the ring (FIG. ).
Les branches et le segment de fermeture 3 ont une direction préférentielle de propagation du flux magnétique en dynamique. Les axes magnétiques des branches et du segment de fermeture 3 sont orientés les uns par rapport aux autres, de manière à obtenir un flux sous forme d'une boucle fermée comme représenté à la figure 4 par les flèches 6.The branches and the
Les branches peuvent être disposées dans des plans différents parallèles. Ainsi, comme représenté à la figure 5, le premier jeu 4 de branches parallèles est disposé dans un premier plan et le second jeu 5 de branches parallèles est disposé dans un second plan, parallèle au premier plan et supérieur au premier plan sur la figure 5. Par ailleurs, les branches peuvent avoir des épaisseurs différentes. Ainsi, sur la figure 5 les branches du premier jeu 4 sont moins épaisses que les branches du second jeu 5. Ceci permet notamment d'adapter le noyau aux contraintes locales de la puce utilisée et des composants électroniques adjacents.The branches can be arranged in different parallel planes. Thus, as shown in FIG. 5, the first set of parallel branches is arranged in a first plane and the second set of parallel branches is arranged in a second plane, parallel to the first plane and greater than the first plane in FIG. In addition, the branches can have different thicknesses. Thus, in FIG. 5 the branches of the
Un ou plusieurs entrefers peuvent éventuellement couper le noyau magnétique 1 afin d'augmenter la réluctance du circuit magnétique. Le noyau magnétique 1 représenté à la figure 6 comporte plusieurs entrefers 11 de dimension faible (au moins un facteur 1 /10 entre la dimension de l'entrefer et la longueur totale du circuit magnétique). Les entrefers peuvent être disposés dans une ou plusieurs des branches.One or more air gaps may optionally cut the
Comme représenté aux figures 1, 4 et 6, les branches constituent une spirale de type rectangulaire, ou au moins sensiblement rectangulaire, ayant deux spires s'inscrivant dans deux rectangles concentriques. Cependant, selon les besoins, des spirales plus complexes peuvent être envisagées. Les formes mises en jeu peuvent être quelconques, par exemple la géométrie de la spirale est rectangulaire, ronde, carrée ou octogonale. L'homme du métier détermine la forme particulière en utilisant des logiciels de simulation tels que le logiciel Flux de la société Cedrat ou le logiciel Maxwell de la société Ansoft.As represented in FIGS. 1, 4 and 6, the branches constitute a spiral of rectangular type, or at least substantially rectangular, having two turns forming part of two concentric rectangles. However, as needed, more complex spirals may be considered. The forms involved may be arbitrary, for example the geometry of the spiral is rectangular, round, square or octagonal. The person skilled in the art determines the particular form by using simulation software such as the Flux software from Cedrat or the Maxwell software from Ansoft.
La figure 7 illustre une micro-inductance comportant le noyau magnétique 1 selon l'invention. Une pluralité de spires 9 disjointes constitue un bobinage autour du noyau magnétique 1. Toutes les branches du noyau peuvent comporter des spires de bobinage. De préférence, les spires enveloppent la quasi-totalité de la surface du noyau magnétique 1, un écart d'isolement minimum séparant les spires adjacentes. Chaque spire peut comporter une section plane inférieure dans un plan inférieur, une section plane supérieure dans un plan supérieur et deux sections montantes. Le bobinage comporte, de préférence, une entrée électrique unique et une sortie électrique unique. Le segment de fermeture 3 ne comporte, de préférence, pas de spires 9.FIG. 7 illustrates a micro-inductance comprising the
Pour les composants intégrés utilisant des techniques de micro-fabrication classiques, la micro-inductance ne présente aucune difficulté de fabrication additionnelle par rapport aux systèmes conventionnels préexistants.For integrated components using conventional micro-fabrication techniques, the micro-inductance presents no additional manufacturing difficulties compared to conventional pre-existing systems.
Pour le noyau magnétique 1, on utilise des matériaux magnétiques à forte perméabilité (supérieure à 10), typiquement des alliages à base de fer (Fe) et/ou de nickel (Ni) et/ou de cobalt (Co) et pouvant contenir l'un ou plusieurs des éléments suivants : aluminium (Al), silicium (Si), tantale (Ta), hafnium (Hf), azote (N), oxygène (O) et bore (B). Le noyau peut être hétérogène et constitué de plusieurs couches ferromagnétiques et conductrices ou diélectriques (non magnétiques) ou antiferromagnétiques. En particulier, le noyau peut être constitué d'une alternance de couches magnétiques et de couches intermédiaires, par exemple un empilement comportant deux couches magnétiques séparées par une couche intermédiaire. Les couches intermédiaires peuvent, par exemple, être en métal (cuivre Cu, titane Ti ou ruthénium Ru, par exemple) ou en un matériau isolant comme l'oxyde de silicium SiO2 ou l'oxyde d'aluminium Al2O3, par exemple. Les couches intermédiaires peuvent également être constituées par des matériaux antiferromagnétiques comme l'oxyde de nickel NiO ou les alliages de manganèse (Mn) comportant du nickel (NiMn), de l'iridium (IrMn) ou du platine (PtMn).For the
La micro-inductance n'est pas limitée dans sa fréquence d'utilisation, et pourrait convenir à des utilisations à haute fréquence, qui réclament toujours plus de puissance. On peut alors très bien imaginer de tels composants travaillant dans la gamme des micro-ondes et remplaçant les inductances intégrées ou discrètes, avec ou sans matériau magnétique, qui sont habituellement utilisées. On retrouve alors des applications de type filtrage, adaptation d'impédance, etc.The micro-inductance is not limited in its frequency of use, and may be suitable for high frequency uses, which always demand more power. One can then very well imagine such components working in the range of microwaves and replacing integrated or discrete inductances, with or without magnetic material, which are usually used. We then find applications such as filtering, impedance matching, etc.
Claims (9)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0609714A FR2908231B1 (en) | 2006-11-07 | 2006-11-07 | SPIRAL-SHAPED MAGNETIC CORE AND INTEGRATED MICRO-INDUCTANCE COMPRISING SUCH MAGNETIC CORE CLOSED |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1921640A1 true EP1921640A1 (en) | 2008-05-14 |
EP1921640B1 EP1921640B1 (en) | 2009-08-26 |
Family
ID=38004847
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP07354060A Not-in-force EP1921640B1 (en) | 2006-11-07 | 2007-11-06 | Spiral-shaped closed magnetic core and integrated micro-inductance comprising such a closed magnetic core |
Country Status (6)
Country | Link |
---|---|
US (1) | US20080106364A1 (en) |
EP (1) | EP1921640B1 (en) |
JP (1) | JP2008187166A (en) |
AT (1) | ATE441193T1 (en) |
DE (1) | DE602007002139D1 (en) |
FR (1) | FR2908231B1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150061815A1 (en) | 2013-09-04 | 2015-03-05 | International Business Machines Corporation | Planar inductors with closed magnetic loops |
US10290414B2 (en) * | 2015-08-31 | 2019-05-14 | Qualcomm Incorporated | Substrate comprising an embedded inductor and a thin film magnetic core |
US10600566B2 (en) | 2016-10-13 | 2020-03-24 | International Business Machines Corporation | Method for forming a planar, closed loop magnetic structure |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3016067A1 (en) * | 1980-04-25 | 1981-10-29 | Siemens AG, 1000 Berlin und 8000 München | Hybrid circuit with integral inductor - wound with turns partly on substrate and partly on flexible insulation ribbon |
US6114937A (en) * | 1996-08-23 | 2000-09-05 | International Business Machines Corporation | Integrated circuit spiral inductor |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3465238A (en) * | 1967-10-02 | 1969-09-02 | Jacob Marlow | Position and velocity detecting apparatus |
US4309655A (en) * | 1978-06-23 | 1982-01-05 | Lgz Landis & Gyr Zug Ag | Measuring transformer |
JPS61196505A (en) * | 1985-02-26 | 1986-08-30 | Nec Corp | Inductance structure |
JPH01106410A (en) * | 1987-10-20 | 1989-04-24 | Victor Co Of Japan Ltd | Inductance element |
JPH0513235A (en) * | 1991-07-03 | 1993-01-22 | Sumitomo Electric Ind Ltd | Inductance element |
JPH07220932A (en) * | 1994-02-04 | 1995-08-18 | Mitsubishi Electric Corp | Coil element and its module |
JP2694114B2 (en) * | 1994-02-28 | 1997-12-24 | 株式会社アモルファス・電子デバイス研究所 | Thin film magnetic element and manufacturing method thereof |
WO1997002583A1 (en) * | 1995-06-30 | 1997-01-23 | Hitachi Metals, Ltd. | Magnetic core |
US5847518A (en) * | 1996-07-08 | 1998-12-08 | Hitachi Ferrite Electronics, Ltd. | High voltage transformer with secondary coil windings on opposing bobbins |
TR199902411A3 (en) * | 1998-11-02 | 2000-06-21 | Lincoln Global, Inc. | Output coil and method of use for direct current welding machine |
JP2000283998A (en) * | 1999-03-31 | 2000-10-13 | Osaki Electric Co Ltd | Magnetic circuit for converting electricity quantity into magnetic flux |
US6815220B2 (en) * | 1999-11-23 | 2004-11-09 | Intel Corporation | Magnetic layer processing |
FR2811135B1 (en) * | 2000-06-29 | 2002-11-22 | Memscap | MICRO-COMPONENT OF THE MICRO-INDUCTANCE OR MICRO-TRANSFORMER TYPE |
US6700472B2 (en) * | 2001-12-11 | 2004-03-02 | Intersil Americas Inc. | Magnetic thin film inductors |
JP3971697B2 (en) * | 2002-01-16 | 2007-09-05 | Tdk株式会社 | High-frequency magnetic thin film and magnetic element |
US6825749B1 (en) * | 2004-01-26 | 2004-11-30 | National Applied Research Laboratories National Chip Implementation Center | Symmetric crossover structure of two lines for RF integrated circuits |
JP4541800B2 (en) * | 2004-08-20 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | Semiconductor device with inductor |
KR100688858B1 (en) * | 2004-12-30 | 2007-03-02 | 삼성전기주식회사 | Printed circuit board with spiral three dimension inductor |
-
2006
- 2006-11-07 FR FR0609714A patent/FR2908231B1/en not_active Expired - Fee Related
-
2007
- 2007-10-10 US US11/907,215 patent/US20080106364A1/en not_active Abandoned
- 2007-10-30 JP JP2007281911A patent/JP2008187166A/en active Pending
- 2007-11-06 DE DE602007002139T patent/DE602007002139D1/en active Active
- 2007-11-06 AT AT07354060T patent/ATE441193T1/en not_active IP Right Cessation
- 2007-11-06 EP EP07354060A patent/EP1921640B1/en not_active Not-in-force
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3016067A1 (en) * | 1980-04-25 | 1981-10-29 | Siemens AG, 1000 Berlin und 8000 München | Hybrid circuit with integral inductor - wound with turns partly on substrate and partly on flexible insulation ribbon |
US6114937A (en) * | 1996-08-23 | 2000-09-05 | International Business Machines Corporation | Integrated circuit spiral inductor |
Non-Patent Citations (4)
Title |
---|
A. VON DER WETH ET AL.: "Numerical Inductor Optimization", TRANS. MAGN. SOC., vol. 2, no. 5, 2002, pages 361 - 366 |
J.Y.PARK: "Integrated Electroplated Micromachined Magnetic Devices Using Low Temperature Fabrication Processes", IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING, vol. 23, no. 1, 2000 |
JAE YEONG PARK ET AL: "Integrated Electroplated Micromachined Magnetic Devices Using Low Temperature Fabrication Processes", IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING, IEEE, PISCATAWAY, NY, US, vol. 23, no. 1, January 2000 (2000-01-01), XP011020016, ISSN: 1521-334X * |
S.CUK: "New Magnetic Structures for Switching Converters", IEEE TRANSACTIONS ON MAGNETICS, vol. 19, no. 2, 1983 |
Also Published As
Publication number | Publication date |
---|---|
FR2908231A1 (en) | 2008-05-09 |
US20080106364A1 (en) | 2008-05-08 |
JP2008187166A (en) | 2008-08-14 |
FR2908231B1 (en) | 2009-01-23 |
EP1921640B1 (en) | 2009-08-26 |
ATE441193T1 (en) | 2009-09-15 |
DE602007002139D1 (en) | 2009-10-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101792281B1 (en) | Power Inductor and Manufacturing Method for the Same | |
WO2017090736A1 (en) | Spin current magnetization reversal-type magnetoresistive effect element and method for producing spin current magnetization reversal-type magnetoresistive effect element | |
EP1187149A1 (en) | Microcomponent of the type microinductance or microtransformer | |
FR2793943A1 (en) | MICRO-COMPONENTS OF THE MICRO-INDUCTANCE OR MICRO-TRANSFORMER TYPE, AND METHOD FOR MANUFACTURING SUCH MICRO-COMPONENTS | |
US20070230042A1 (en) | Thin film device | |
US20090322458A1 (en) | Magnetic component | |
KR102004238B1 (en) | Chip electronic component and manufacturing method thereof | |
EP1916675B1 (en) | Coil comprising several coil branches and micro-inductance comprising one of these coils | |
EP1921640B1 (en) | Spiral-shaped closed magnetic core and integrated micro-inductance comprising such a closed magnetic core | |
WO2000044008A2 (en) | Discrete inductive-type electronic component, method for the production thereof | |
EP3579255B1 (en) | Integrated circuit comprising variable inductance | |
EP3033755B1 (en) | Ferrite device for power application and manufacturing method of device | |
FR2907589A1 (en) | Integrated micro-induction coil for e.g. power electronics application, has disjointed loops constituting winding around core, where core has four parallel branches that are enclosed by winding and have ends connected by respective bases | |
FR2811135A1 (en) | MICRO-COMPONENT OF THE MICRO-INDUCTANCE OR MICRO-TRANSFORMER TYPE | |
FR3066854B1 (en) | INTEGRATED MAGNETIC DEVICE WITH VARIABLE INDUCTANCE AND METHOD OF MAKING SAME | |
FR2905792A1 (en) | Closed magnetic circuit for e.g. integrated transformer, has two magnetic layers alternately and respectively provided with two sets of elementary ferromagnetic sub-layers separated from two insulating non-magnetic sub-layers | |
WO2010122919A1 (en) | Magnetic sensor | |
EP3506326A2 (en) | Inductive filter device with toroidal magnetic core | |
EP3391461B1 (en) | Wireless communication module, plate suitable for use in manufacturing said module and method for manufacturing said module | |
JP2019179899A (en) | Magnetoresistance effect device | |
FR2909482A1 (en) | Rectilinear solenoid winding for e.g. permeameter, has turns, whose one of dimensions is variable and determined individually with respect to position of turns along winding and predetermined magnetic characteristic of winding | |
EP1178504A1 (en) | Micro component of the micro inductance or micro transformer type | |
FR3037187B1 (en) | MAGNETOELECTRIC INDUCTIVE COMPONENT ELECTROSTATICALLY CONNECTED | |
FR2823365A1 (en) | Inductance electrical winding having continuous wire with first direction wire emanating central point/second wire opposite direction with both wires having same electrical sense | |
FR2897200A1 (en) | Inductor e.g. magnetomechanical inductor, for being integrated e.g. on silicon, has permanent magnets creating static magnetic field in plane of membrane portion that is cut under form of plane pattern |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL BA HR MK RS |
|
17P | Request for examination filed |
Effective date: 20081105 |
|
AKX | Designation fees paid |
Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D Free format text: NOT ENGLISH |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D Free format text: LANGUAGE OF EP DOCUMENT: FRENCH |
|
REF | Corresponds to: |
Ref document number: 602007002139 Country of ref document: DE Date of ref document: 20091008 Kind code of ref document: P |
|
LTIE | Lt: invalidation of european patent or patent extension |
Effective date: 20090826 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20091226 Ref country code: AT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20090826 Ref country code: LT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20090826 Ref country code: SE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20090826 Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20090826 |
|
NLV1 | Nl: lapsed or annulled due to failure to fulfill the requirements of art. 29p and 29m of the patents act | ||
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LV Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20090826 Ref country code: SI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20090826 Ref country code: NL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20090826 Ref country code: PL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20090826 |
|
RAP2 | Party data changed (patent owner data changed or rights of a patent transferred) |
Owner name: COMMISSARIAT A L'ENERGIE ATOMIQUE |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BG Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20091126 Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20091228 Ref country code: CY Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20090826 |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FD4D |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20090826 Ref country code: ES Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20091207 Ref country code: IE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20090826 Ref country code: EE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20090826 Ref country code: RO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20090826 Ref country code: CZ Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20090826 |
|
BERE | Be: lapsed |
Owner name: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE Effective date: 20091130 Owner name: STMICROELECTRONICS SA Effective date: 20091130 Owner name: COMMISSARIAT A L'ENERGIE ATOMIQUE Effective date: 20091130 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20090826 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MC Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20091130 |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
26N | No opposition filed |
Effective date: 20100527 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20091130 Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20091127 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20101119 Year of fee payment: 4 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LU Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20091106 Ref country code: MT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20090826 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: HU Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20100227 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: TR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20090826 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20101106 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: IT Payment date: 20101130 Year of fee payment: 4 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20111130 Year of fee payment: 5 |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20111130 Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20111130 |
|
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 20121106 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: ST Effective date: 20130731 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20121106 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R119 Ref document number: 602007002139 Country of ref document: DE Effective date: 20130601 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20130601 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20121130 Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20121106 |