EP1953834A1 - Light-emitting device - Google Patents
Light-emitting device Download PDFInfo
- Publication number
- EP1953834A1 EP1953834A1 EP05844849A EP05844849A EP1953834A1 EP 1953834 A1 EP1953834 A1 EP 1953834A1 EP 05844849 A EP05844849 A EP 05844849A EP 05844849 A EP05844849 A EP 05844849A EP 1953834 A1 EP1953834 A1 EP 1953834A1
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- EP
- European Patent Office
- Prior art keywords
- led chip
- encapsulation
- color conversion
- mounting substrate
- conversion member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Abstract
Description
- The invention relates to a light emitting device using a LED (Light Emitting Diode) chip and a manufacturing method thereof.
- Japanese Unexamined Patent Application Publication No.
2001-85748 2001-148514 Patent document 1 and 2 is shaped to have an opening area which becomes greater as it is spaced further away from the circuit board and is finished to have a mirror interior face which serves as a reflector reflecting a light emitted from the LED chip. - Further, the patent document 2 discloses the light emitting device which utilizes a blue LED chip with blue luminescence to radiate a white luminescent spectrum by use of a yellowish fluorescent material which is dispersed in a transparent resin encapsulating the blue LED chip to be excited by the light from the blue LED chip.
- When an epoxy resin is used as a material of the encapsulation member in the light emitting device, bonding wires may be cut off when subjected to a heat cycle test (temperature cycle test) of repeating a low temperature period of -40°C and a high temperature period of 80°C alternately, due to thermal-expansion of an electrically conductive pattern mounted on a substrate of a circuit board in the high temperature environment.
- On the other hand, when a silicone resin is used as a material of the encapsulation member in the light emitting device, the bonding wires can be prevented from being cut off in the high temperature period of the heat cycle test because of that the encapsulation member is gelatinous and elastic. However, since a linear expansion coefficient of the silicone resin, which is a material of the encapsulation member, is more than 10 times that of an aluminum which is a material of the frame, voids may be generated within the encapsulation member due to the difference in linear expansion coefficient between silicone resin and aluminum.
- Furthermore, in the light emitting device, although the light emitted from the LED chip can be taken to external of the encapsulation member effectively by means of the frame finished with a mirror interior face, there is a failure of causing light loss resulting from the reflection of the light on the interior face of the frame.
- Besides, in the light emitting device according to the
Patent document 1, when a lens controlling an orientation of the light emitted from the LED chip is arranged over the encapsulation member and the frame, a light output may be lowered due to a deviation between an optical axis of the LED chip and that of the lens, resulting from dimensional accuracy or assembling accuracy of the frame and the lens. - The Patent document 2 also discloses a light emitting device in which the encapsulating member of the LED chip and the bonding wires connected thereto are configured to have its portion shaped into a convex lens. However, since the light emitting device utilizes a fluorescent material which is dispersed partially or entirely in the encapsulation member, its concentration is likely to vary from portions to portions in the encapsulation member, causing color ununiformity. Further, when the fluorescent material is dispersed entirely in the encapsulation member, an increased amount of the fluorescent material is necessary with an attendant cost increase. It is possible that a dome-shaped color conversion member is molded from a fluorescent material and a transparent resin material and is arranged to form an air layer around the encapsulation member. However, in this instance, the color conversion member has to be relatively large in size, and requires an increased amount of the fluorescent material. Further, the air layer between the conversion member and the encapsulation member may cause a total reflection at the interface between the encapsulation member and the air layer depending upon the shape of the encapsulation member, thereby reducing the light output.
- In view of the above problem, the present invention has been accomplished and has an object of providing a light emitting device and a method of manufacturing the same capable of improving light output as well as its reliability and being manufactured at a reduced cost.
- The light emitting device of the present invention includes a light emitting diode (LED) chip, a mounting substrate to which the LED chip is mounted, a dome-shaped color conversion member, and an encapsulation member. The color conversion member is molded from a transparent resin material and a fluorescent material which is excited by a light from the LED chip to emit a light of a color different from a luminescent color of the LED chip and is secured on the mounting substrate so as to surround the LED chip. The encapsulation member is made from an encapsulation resin material to encapsulate the LED chip within the space confined between the mounting substrate and the color conversion member. The feature of the invention resides in that the encapsulation member is shaped to have a convex lens with its light output surface which is held in intimate contact with an interior surface of the color conversion member.
- Since the light emitting device of the present invention is configured to have the convex lens shaped encapsulation member which is held in intimate contact with the interior face of the color conversion member without requiring a conventional frame, the encapsulation member can be free from generating voids therein during a low temperature range in the heat cycle test to improve reliability. Furthermore, non-use of the conventional frame surrounding the LED chip can improve a light output of the device. Besides, the color conversion member can be reduced in size with an attendant cost reduction.
- Preferably, the mounting substrate comprises a heat conductive plate made of a heat conductive material, and a dielectric substrate stacked on the heat conductive plate, the dielectric substrate being provided on its surface opposite to the heat conductive plate with a pair of lead patterns for electrical connection respectively with electrodes of the LED chip. The dielectric substrate has a through-opening inside of which the LED chip is mounted to the heat conductive plate with a planar sub-mount member interposed therebetween. The sub-mount member has a larger size than the LED chip and thermally couples the LED chip to the heat conductive plate in order to relieve a stress applied to the LED chip due to a difference in linear expansion coefficient between the LED chip and the heat conductive plate.
- In this case, the sub-mount member acts to efficiently radiate a heat generated in the LED chips through the heat conductive plate, and relieve the stress applied to the LED chip due to the difference in linear expansion-coefficient between the LED chip and the heat conductive plate.
- Preferably, the sub-mount member is designed to have a thickness such that a surface of the LED chip facing the sub-mount member is spaced from the heat conductive plate by a distance greater than that between the heat conductive plate and an edge of the color conversion member opposed to the mounting substrate.
- In this instance, the light emitted from the lateral side of the LED chip can be prevented from leaking out through the juncture between the color conversion member and the mounting substrate.
- Preferably, the color conversion member is shaped to have a spherical inner surface about the LED chip for intimate contact with the light output surface of the encapsulation member.
- In this instance, the light emitted from the LED chip can advance the color conversion member only with a minimum variation in an optical path for restraining color ununiformity.
- A method of manufacturing the light emitting device in accordance with the present invention is preferred to include the followings steps.
- (a) the step of mounting the LED chip to the mounting substrate to couple the LED chip to the mounting substrate by means of bonding wires;
- (b) the step of covering the LED chip and the bonding wires with an uncured first encapsulation resin material which becomes one part of the encapsulation member;
- (c) the step of poring an uncured second encapsulation resin material, which is the same material as the first one and becomes the other part of the encapsulation member, inside the color conversion member, and positioning the color conversion member on the mounting substrate; and
- (d) the step of curing each of the first and second encapsulation resin materials to form the encapsulation member.
- With this method, the encapsulation member can hardly suffer from generation of voids in the manufacturing process.
- Preferably, the color conversion member in the light emitting device of the present invention is formed with an injection port for pouring the encapsulation resin material into the space confined between the color conversion member and the mounting substrate, and also with a discharge port for discharging the excess of the encapsulation resin material.
- Further, the method of manufacturing the light emitting device in the present invention may include the following steps.
- (a) the step of mounting the LED chip to the mounting substrate to couple the LED chip to the mounting substrate by means of the bonding wires;
- (b) the step of fixing the color conversion member on the mounting substrate carrying the LED chip thereto;
- (c) the step of filling an uncured encapsulation resin material within the space confined between the color conversion member and the mounting substrate through the injection port of the color conversion member;
- (d) the step of curing the encapsulation resin material to form the encapsulation member.
- Also with this method, the encapsulation member can hardly suffer from generation of the voids in the manufacturing process.
- Besides, the method of manufacturing the light emitting device in accordance with the present invention may include the following steps.
- (a) the step of mounting the LED chip to the mounting substrate to couple the LED chip to the mounting substrate by means of the bonding wires;
- (b) the step of covering the LED chip and the bonding wire with the uncured first encapsulation resin material which becomes one part of the encapsulation member;
- (c) the step of fixing the color conversion member on the mounting substrate after the step (b);
- (d) the step of filling the uncured second encapsulation resin material, which is the same material as the first one and becomes the other part of the encapsulation member, within the space confined between the color conversion member and the mounting substrate through the injection port of the color conversion member;
- (e) the step of curing the first and second encapsulation resin materials to form the encapsulation member.
- Also with this method, the encapsulation member can hardly suffer from generation of the voids in the manufacturing process.
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FIG. 1 is a cross sectional view of a light emitting device in accordance with a first embodiment. -
FIG. 2 is an exploded perspective view of the above light emitting device with a portion broken away. -
FIG. 3 is a plan view of an essential part of the above light emitting device. -
FIG. 4 is a perspective view of a sub-mount member utilized in the above light emitting device. -
FIG. 5A is a plan view of a dielectric substrate utilized in the above light emitting device. -
FIG. 5B is a cross sectional view of the above dielectric substrate taken along line A-B-C-D inFIG. 5A . -
FIG. 5C is a partly broken away bottom view of the above dielectric substrate ofFIG. 5A . -
FIG. 6 is an explanation view illustrating a method of manufacturing the above light emitting device. -
FIG. 7 is an explanation view illustrating a method of manufacturing the above light emitting device. -
FIG. 8 is a cross sectional view of a light emitting device in accordance with a second embodiment. -
FIG. 9 is an explanation view illustrating a method of manufacturing the above light emitting device. -
FIG. 10A is an explanation view illustrating a method of manufacturing the above light emitting device. -
FIG. 10B is an explanation view illustrating a method of manufacturing the above light emitting device. - Hereafter, the invention will be explained in detail with reference to the attached drawings.
- As shown in
FIGS 1 to 3 , thelight emitting device 1 of the present embodiment includes anLED chip 10, a mountingsubstrate 20 to which the LED chip is mounted, a dome-shapedcolor conversion member 70, and anencapsulation member 50. Thecolor conversion member 70 is molded from a transparent resin material, and a fluorescent material which is excited by a light fromLED chip 10 to emit a light of a color different from a luminescent color of theLED chip 10. Thecolor conversion member 70 is fixed on the mountingsubstrate 20 to surround theLED chip 10 andindividual bonding wires 14 connected to theLED chip 10. Theencapsulation member 50 is made from an elastic encapsulation resin material to encapsulate theLED chip 10 and thebonding wires 14 within the space confined between the mountingsubstrate 20 and thecolor conversion member 70. Theencapsulation member 50 is configured to have a convex lens shape with alight output surface 50b which is held in an intimate contact with an interior surface of thecolor conversion member 70. - The
light emitting device 1 of the present embodiment is adapted in use, for example, as a light source of an illumination appliance, and is mounted to ametal body 100 of the appliance (e.g. the metal with a high thermal conductivity such as Al, Cu) through adielectric layer 90 made of, for example, a green sheet. As being mounted to themetal body 100 of the appliance, a thermal resistance from theLED chip 10 to themetal body 100 can be lowered to improve heat-dissipation capability. Further, since a temperature rise at a junction of theLED chip 10 can be restrained, an increased input power is available to give a high light output. It is noted in this connection that, when thelight emitting device 1 is used for the illumination appliance, a plurality of thelight emitting devices 1 may be mounted to themetal body 100 of the appliance in order to obtain an intended output light power with the emitting devices being connected in series or parallel with each other. - The mounting
substrate 20 includes a metal plate (heat conductive plate) 21 made of a thermal-conductive material and adielectric substrate 22 made of a glass epoxy (FR4) board and superimposed on themetal plate 21. Although themetal plate 21 is made of Cu in the present embodiment, it may be made of another metal having a relatively high thermal conductivity such as Al. Themetal plate 21 is secured to thedielectric substrate 22 by means of a conjugative metal layer 25 (see,FIG. 1 andFIG. 5B, FIG. 5C .) which is made of a metallic material (in this embodiment, Cu) deposited on the surface of thedielectric substrate 22 opposed to themetal plate 21. - The
dielectric substrate 22 includes a pair oflead pattern 23 coupled electrically to both electrodes (not shown) on a surface theLED chip 10 opposed to themetal plate 21, and is formed with a through-opening 24 at a position corresponding to theLED chip 10. - The
LED chip 10 is mounted to themetal plate 21 through a planarsub-mount member 30 disposed within the through-opening 24. Thesub-mount member 30 is shaped into a rectangular plate which is dimensioned to be larger than theLED chip 10, and thermally couples theLED chip 10 to themetal plate 21 in order to relieve a stress applied to theLED chip 10 due to a difference in linear expansion coefficient between the LED chip and themetal plate 21. A heat generated in theLED chip 10 is transmitted to themetal plate 21 not through thedielectric substrate 22. Thesub-mount member 30 has a thermal conductive performance so as to radiate the heat generated in theLED chip 10 to themetal plate 21 over a wider area than the chip size of theLED chip 10. Since theLED chip 10 is thus mounted to themetal plate 21 through thesub-mount member 30 in the present embodiment, the heat generated in theLED chip 10 can be radiated efficiently through thesub-mount member 30 and themetal plate 21, while it is made to relieve the stress applied to theLED chip 10 due to the difference in linear expansion coefficient between theLED chip 10 and themetal plate 21. - In the embodiment, although AIN is adopted as a material of the
sub-mount member 30 because of its relatively high thermal conductivity and insulating performance, the material of thesub-mount member 30 is not limited to AIN, and may be one (e.g. composite SiC, Si, or and the like) having the linear thermal expansion coefficient relatively close to that of an electrically-conductive substrate 11 made of 6H-SiC, and relatively high thermal conductivity. - Further, the
sub-mount member 30 includes a reflecting film (e.g. laminate of Ni film and Ag film) formed around theconductive pattern 31 to reflect the light emitted from theLED chip 10. - Each
lead pattern 23 is provided as a laminate of Cu film, Ni film, and Ag film. A resist layer 26 (seeFIG. 1 andFIG. 5A, FIG. 5B ) made from a whitish resin is superimposed on a surface of thedielectric substrate 22 away from themetal plate 21 to cover eachlead pattern 23. The resistlayer 26 is formed in its center with acircular opening 26a at a center in order to exposeinner leads 23a of eachlead pattern 23, and at its corners respectively withcircular openings 26b in order to exposeouter leads 23b of eachlead pattern 23. - The
LED chip 10 is a GaN-based blue LED chip emitting a blue light. TheLED chip 10 includes the electricallyconductive substrate 11 made of an electrically conductive n-type SiC having a lattice constant and a crystalline structure closer to those of GaN than sapphire. Formed on the main surface of the electricallyconductive substrate 11 is alight emitting part 12 which is made of GaN-based semiconductor material and is obtained by an epitaxial growth (e.g. MOVPE process) to have a laminated structure, e.g. double-hetero structure. A cathode electrode (n-type electrode) (not shown) is formed on the rear side of the electricallyconductive substrate 11 as an electrode on the side of the cathode. An anode electrode (p-type electrode) (not shown) is formed on the surface (a frontmost surface of the principle surface of the conductive substrate 11) of thelight emitting part 12 as an electrode on the side of the anode. In short, the LED chip has the anode electrode on its one surface, and the cathode electrode on the other surface. Thesub-mount member 30 has theconductive pattern 31 on a surface facing the LED chip 10 (as shown inFIG. 4 ). TheLED chip 10 has the cathode electrode electrically contacted to one of thelead patterns 23 through theconductive pattern 31 and through the bonding wires 14 (e.g. gold thin wire, aluminum thin wire, and the like), and has the anode electrode electrically connected to theother lead pattern 23 through thebonding wires 14. - Although the cathode electrode and the anode electrode are each composed of the laminate of Ni film and Au film in the embodiment, materials of the cathode electrode and the anode electrodes are not particularly limited, and may be one having a good ohmic property (e.g. Al and the like). Further, the present embodiment illustrates that the
LED chip 10 is mounted to themetal plate 21 with thelight emitting part 12 of theLED chip 10 being spaced further away from themetal plate 21 by way of thesub-mount member 30 than the electricallyconductive substrate 11. However, it is equally possible to mount theLED chip 10 to themetal plate 21 with thelight emitting part 12 being closer to themetal plate 21 than the electricallyconductive plate 11. Although it is desirable to space thelight emitting part 12 away from themetal plate 21 from a viewpoint of optical extraction efficiency, the close disposition of thelight emitting part 12 to themetal plate 21 does not increase the optical extraction loss because of that the electrically-conductive substrate 11 and thelight emitting part 12 have the refractive index of the same level in the present embodiment. - It is noted in this connection that, although the
LED chip 10 and thesub-mount member 30 can be joined by a solder such as SnPb, AuSn, SnAgCu, or a silver paste, they are preferably joined by use of a lead free solder such as AuSn, SnAgCu. - The
encapsulation member 50 includes thelight output surface 50b formed by one part of a spherical surface and is disposed to have a center of the spherical surface aligned with a center line of thelight emitting part 12 extending through theLED chip 10 in a thickness direction thereof. In another words, theencapsulation member 50 is formed to have a lens of which optical axis is aligned with the center line of thelight emitting part 12 extending through the center of theLED chip 10 in a thickness direction thereof. In the embodiment, theencapsulation member 50 may be made of an acrylic resin instead of the silicone resin. - The
color conversion member 70 is molded from a mixture of the transparent resin material, e.g. silicone resin and a particulate yellowish fluorescent material which is excited by the blue light emitted from theLED chip 10 and passing through theencapsulation member 50 to radiate a broad-band yellowish white light. Thecolor conversion member 70 is secured at its periphery to the mountingsubstrate 20 by an adhesive (e.g. silicone resin, epoxy resin), for example. Thelight emitting device 1 of the present embodiment can give off the white light which is a combination of the blue light emitted from theLED chip 10 and the light emitted through the yellowish fluorescent material, and radiated through anouter surface 70b of thecolor conversion member 70. The transparent resin material used for thecolor conversion member 70 is not limited to the silicone resin, but may include a material which has a higher refractive index than one of an encapsulation resin material used for theencapsulation member 50 and a linear expansion coefficient closer to that of the encapsulation resin material. When the acryl resin is used as the encapsulation resin material of theencapsulation member 50, it may be also employed as the transparent resin material of thecolor conversion member 70. Further, the fluorescent material mixed to the transparent resin material for thecolor conversion member 70 is not limited to the yellowish fluorescent material, and may be replaced with a mixture of a reddish fluorescent material and a greenish fluorescent material which gives a white light. - Preferably, the
color conversion member 70 is configured to have itsinterior face 70a held in an intimate contact with the light output surface of theencapsulation member 50 and shaped into a spherical surface centered on theLED chip 10. In this instance, the difference in optical paths of the light emitting from theLED chip 10 towards various portions of thecolor conversion member 70 can be lowered to thereby reduce color ununiformity. Further, thecolor conversion member 70 is formed to have uniform thickness along a normal line for each circumferential point. - In order to prevent a leakage of the light emitted from the lateral side of the
LED chip 10 through a juncture between thecolor conversion member 70 and the mounting substrate 20 (i.e., prevent the blue light from theLED chip 10 from radiating outwardly not through the color conversion member 70), it is preferred that the surface of theLED chip 10 facing the sub-mount member is spaced further away from themetal plate 21 than an edge of thecolor conversion member 70 adjacent to the mounting substrate is spaced from themetal plate 21. For this purpose, the present embodiment is configured to select the thickness of thesub-mount member 30 such that the surface of theLED chip 10 adjacent to thesub-mount member 30 is spaced further away from themetal plate 21 than the edge of thecolor conversion member 70. In more detail, the thickness ofsub-mount member 30 is adjusted such that the bottom of theLED chip 10 is spaced away from the uppermost surface (a surface of the resist layer 26) of the mountingsubstrate 20 in a direction normal to the surface plane thereof. - Next, an explanation is made as to a method of manufacturing method the
light emitting device 1 in accordance with the present invention. - As shown in
FIG. 6 , the light emitting device could be manufactured by one method in which theLED chip 10 is firstly connected to thebonding wires 14, then thecolor conversion member 70 is filled in its inside with an uncuredencapsulation resin material 50c (e.g. silicone resin) which forms theencapsulation member 50 later on, and subsequently the encapsulation resin material is cured to form theencapsulation member 50 with thecolor conversion member 70 held in position on the mountingsubstrate 20. However, such method would suffer from generating voids in theencapsulation member 50. - In view of this, the manufacturing method of the present embodiment is preferred to include the following steps. Firstly, the
LED chip 10 is mounted to the mountingsubstrate 20 to be connected thereto by means of the bonding wires 14 (step (a)). Secondly, as shown inFIG. 7 , theLED chip 10 and thebonding wires 14 are covered by an uncured first encapsulation resin material (for example, silicone resin) 50a which becomes one part of the encapsulation member 50 (step (b)). Next, an uncured second encapsulation resin material (for example, silicone resin) 50b, which is made of the same as the firstencapsulation resin material 50a and becomes the other part of theencapsulation member 50, is injected into thecolor conversion member 70 followed by thecolor conversion member 70 being positioned on the mounting substrate 20 (step (c)). After that, each of theencapsulation resin materials encapsulation member 50, and can provide thelight emitting device 1 with a high reliability and a large light output. - In the present embodiment, the circular-shaped
opening 26a formed in a center part of the resistlayer 26 on the mountingsubstrate 20 is configured to have an inner diameter which is slightly larger than a maximum outer diameter of thecolor conversion member 70, and a portion of the firstencapsulation resin material 50a flows into the interior of theopening 26a while being potted so as to be utilized as an adhesive for securing thecolor conversion member 70 to the mountingsubstrate 20. - As mentioned in the above, the
light emitting device 1 of the present embodiment in configured to make the convex lens-shapedencapsulation member 50 in intimate contact with the interior face of thecolor conversion member 70 without relying upon a conventional frame. Accordingly, the device is given improved reliability as a consequence of eliminating generation of the voids in the encapsulation member in a low-temperature period of heat cycle test. Further, the device gives improved light output as a consequence of requiring no conventional frame. Moreover, the use of the small-sizedcolor conversion member 70 can reduce the amount of the fluorescent material and therefore enable it to make the device at a low cost. Further, theencapsulation member 50 of the convex lens shape eliminates the use of an additional lens to thereby avoid the lowering of the light output due to the optical axis misalignment between theLED chip 10 and the lens, in addition to reducing the number of the components. - The
light emitting devices 1 of the present embodiment has a basic structure similar to the first embodiment, and therefore like parts are designated by like reference numerals and dispensed with duplicate explanations. - In this embodiment, as shown in
FIG. 8 , thecolor conversion member 70 is formed with aninjection port 71 for pouring an encapsulation resin material into the space confined between thecolor conversion member 70 and the mountingsubstrate 20, and also with adischarge port 72 for discharging the excess of the encapsulation resin material. - Further, the
color conversion member 70 is bonded at its edge to the mountingsubstrate 20 by thejuncture 75 made of an adhesive extending along the entire circumference of the edge. Thus, thelight emitting device 1 of the present embodiment is easy to adjust the thickness of thejuncture 75 between thecolor conversion member 70, and the mountingsubstrate 20 and is given improved reliability of bonding thecolor conversion member 70 to the mountingsubstrate 20, in comparison with the device of the first embodiment. In this instance, the adhesive of thejuncture 75 is preferably the same material as thecolor conversion member 70. - The
light emitting device 1 of the present embodiment is preferred to be manufactured with the following steps. Firstly, theLED chip 10 is mounted to the mountingsubstrate 20, and theLED chip 10 is connected to the mountingsubstrate 20 by means of the bonding wires 14 (step (a)). Secondly, as shown inFIG. 9 , thecolor conversion member 70 is adhered to the mountingsubstrate 20 at the juncture portion 75 (step (b)). Next, an uncured encapsulation resin material is filled within the space confined between thecolor conversion member 70 and the mountingsubstrate 20 through theinjection port 71 of the color conversion member 70 (step (c)). After that, theencapsulation member 50 is formed by curing the encapsulation resin material (step (d)). With this manufacturing method, voids are hard to be generated in theencapsulation member 50 during the manufacturing process. - Further, the manufacturing method of the
light emitting device 1 is preferred to include the following steps. Firstly, theLED chip 10 is mounted to the mountingsubstrate 20, and theLED chip 10 is connected to the mountingsubstrate 20 by means of the bonding wires 14 (step (a)). Secondly, as shown inFIG.10A , theLED chip 10 and thebonding wires 14 are covered by the uncured first encapsulation resin material (e.g. silicone resin) 50a which becomes one part of the encapsulation member 50 (step (b)). After that, thecolor conversion member 70 is adhered to the mounting substrate 20 (step (c)). Next, the uncured secondencapsulation resin material 50b, which is the same as the firstencapsulation resin material 50a and becomes the other part of theencapsulation member 50, is filled within the space confined between thecolor conversion member 70 and the mountingsubstrate 20 through theinjection port 71 of the color conversion member 70 (step (d)). Thereafter, the firstencapsulation resin material 50a and the second encapsulation resin material are cured to form the encapsulation member 50 (step (e)). This instance has therefore an advantageous in that theencapsulation member 50 is made more reluctant to generate the voids. - Although each of the above embodiments employs the blue-light LED chip with the blue luminescence as the
LED chip 10 and the SiC substrate as the electricallyconductive substrate 11, a GaN substrate may be used instead of the SiC substrate. The use of the SiC substrate and the GaN substrate as an epitaxial growth substrate enables to increase thermal conductivity and lower the heat resistance thereof, in comparison with the use of a sapphire substrate as a dielectric epitaxial growth substrate. Further, the luminescent color of theLED chip 10 is not limited to be blue, and may be red, green or the like. Namely, a material oflight emitting part 12 of theLED chip 10 is not limited to a compound of GaN-based semiconductor material, and may be selected from a compound of GaAs-based, GaP-based semiconductor materials, or the like, depending on the luminescent color of theLED chip 10. Besides, the electricallyconductive substrate 11 is not limited to SiC substrate, and may be optionally selected from GaAs substrate, GaP substrate, and the like, depending on the material oflight emission portion 12. Furthermore, it should not be noted that thesub-mount member 30 explained in each of the above embodiments is not necessarily provided in a circumstance where there is only a small difference of the linear expansion coefficient between theLED chip 10 and the mountingsubstrate 20. Moreover, the mountingsubstrate 20 may be configured differently from that explained in the each of the above embodiments. - As discussed in the above, apparently many widely different embodiments may be made without departing from the technical concept of the present invention, and therefore the present invention should not be limited to the specific embodiments except as defined in the claims.
Claims (8)
- A light emitting device comprising:an LED chip;a mounting substrate mounting said LED chip;a dome-shaped color conversion member made of a transparent resin material and a fluorescent material which is excited by a light emitted from said LED chip to emit a light of a color different from a luminescent color of the LED chip, saiddome-shaped color conversion member being bonded on the mounting substrate to surround the LED chip; andan encapsulation member disposed in a space confined between the mounting substrate and the color conversion member to encapsulate the LED chip, said encapsulation member being made of an encapsulation resin material,wherein said encapsulation member has a convex lens-shape such that a light output surface of the encapsulation member is held in an intimate contact with an internal surface of the color conversion member.
- The light emitting device as set forth in claim 1, wherein
said mounting substrate includes a heat conductive plate made of a heat conductive material and a dielectric substrate stacked on said heat conductive plate, said dielectric substrate being formed with a pair of lead patterns on its surface opposite to said heat conductive plate for electrical connection respectively with electrodes of said LED chip,
wherein said dielectric substrate has a through-opening at a portion corresponding to said LED chip,
wherein said LED chip is mounted to said heat conductive plate inside of the through-opening with a planar sub-mount member interposed between said LED chip and said heat conductive plate, and
wherein said sub-mount member is larger than the LED chip and is configured to thermally couple the LED chip to the heat conductive plate so as to relieve a stress applied to said LED chip due to a difference in linear thermal expansion coefficient between said LED chip and said heat conductive plate. - The light emitting device as set forth in claim 2, wherein
said sub-mount member has a thickness such that the surface of said LED chip facing the sub-mount member is spaced from said heat conductive plate by a distance greater than that between the heat conductive plate and an edge of said color conversion member adjacent to the mounting substrate. - The light emitting device as set forth in claim 1, wherein
said color conversion member is shaped to have said internal surface which is spherical about the LED chip and in an intimate contact with the light output surface of the encapsulation member. - The light emitting device as set forth in claim 1, wherein
said color conversion member has an injection port for injecting said encapsulation resin material into the space confined between the color conversion material and the mounting substrate and a discharge port for discharging an excess amount of said encapsulation resin material. - A method of manufacturing the light emitting device as defined in claim 1, said method comprising the steps of:(a) mounting said LED chip to said mounting substrate, and connecting said LED chip to said mounting substrate by means of bonding wires;(b) covering said LED chip and said bonding wires with an uncured first encapsulation resin material which becomes a part of said encapsulation member;(c) filling up inside of said color conversion member with an uncured second encapsulation resin material which is the same material of said first encapsulation resin material and becomes the other part of said encapsulation member so as to position the color conversion member on the mounting substrate; and(d) curing each of said first and second uncured encapsulation resin materials to form said encapsulation member.
- A method of manufacturing the light emitting device as defined in claim 5, said method comprising the steps of:(a) mounting said LED chip to said mounting substrate, and connecting said LED chip to said mounting substrate by means of bonding wires;(b) boding said color conversion member to said mounting substrate to which the LED chip is mounted;(c) filling up a space confined between said color conversion member and said mounting substrate with an uncured encapsulation resin material through said injection port of the color conversion member; and(d) curing said uncured encapsulation resin material to form said encapsulation member.
- A method of manufacturing the light emitting device as defined in claim 5, said method comprising the steps of:(a) mounting said LED chip to said mounting substrate, and connecting said LED chip to said mounting substrate by means of bonding wires;(b) covering said LED chip and said boding wires with an uncured first encapsulation resin material which becomes a part of the encapsulation member;(c) after the step of (b), bonding said color conversion member to said mounting substrate;(d) filling up a space confined between said color conversion member and said mounting substrate with an uncured second encapsulation resin material, which is the same material of said first encapsulation resin material and becomes the other part of the encapsulation member, through said injection port of the color conversion member; and(e) curing each said first and second uncured encapsulation resin materials to form said encapsulation member.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005336190A JP3992059B2 (en) | 2005-11-21 | 2005-11-21 | Method for manufacturing light emitting device |
PCT/JP2005/024032 WO2007057983A1 (en) | 2005-11-21 | 2005-12-28 | Light-emitting device |
Publications (3)
Publication Number | Publication Date |
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EP1953834A1 true EP1953834A1 (en) | 2008-08-06 |
EP1953834A4 EP1953834A4 (en) | 2013-09-25 |
EP1953834B1 EP1953834B1 (en) | 2018-12-12 |
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Application Number | Title | Priority Date | Filing Date |
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EP05844849.9A Not-in-force EP1953834B1 (en) | 2005-11-21 | 2005-12-28 | Light-emitting device |
Country Status (6)
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---|---|
US (1) | US7767475B2 (en) |
EP (1) | EP1953834B1 (en) |
JP (1) | JP3992059B2 (en) |
KR (1) | KR101010230B1 (en) |
CN (1) | CN101313414B (en) |
WO (1) | WO2007057983A1 (en) |
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Also Published As
Publication number | Publication date |
---|---|
JP2007142279A (en) | 2007-06-07 |
US20080258164A1 (en) | 2008-10-23 |
KR101010230B1 (en) | 2011-01-21 |
CN101313414B (en) | 2010-05-26 |
US7767475B2 (en) | 2010-08-03 |
EP1953834A4 (en) | 2013-09-25 |
EP1953834B1 (en) | 2018-12-12 |
JP3992059B2 (en) | 2007-10-17 |
CN101313414A (en) | 2008-11-26 |
WO2007057983A1 (en) | 2007-05-24 |
KR20080073343A (en) | 2008-08-08 |
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