EP2033236A4 - Led device with re-emitting semiconductor construction and optical element - Google Patents

Led device with re-emitting semiconductor construction and optical element

Info

Publication number
EP2033236A4
EP2033236A4 EP07798367.4A EP07798367A EP2033236A4 EP 2033236 A4 EP2033236 A4 EP 2033236A4 EP 07798367 A EP07798367 A EP 07798367A EP 2033236 A4 EP2033236 A4 EP 2033236A4
Authority
EP
European Patent Office
Prior art keywords
optical element
led device
emitting semiconductor
semiconductor construction
construction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP07798367.4A
Other languages
German (de)
French (fr)
Other versions
EP2033236A1 (en
Inventor
Catherine A Leatherdale
Andrew J Ouderkirk
Michael A Haase
Thomas J Miller
Dong Lu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of EP2033236A1 publication Critical patent/EP2033236A1/en
Publication of EP2033236A4 publication Critical patent/EP2033236A4/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0028—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed refractive and reflective surfaces, e.g. non-imaging catadioptric systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0061—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0071—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source adapted to illuminate a complete hemisphere or a plane extending 360 degrees around the source
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
EP07798367.4A 2006-06-12 2007-06-11 Led device with re-emitting semiconductor construction and optical element Pending EP2033236A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US80454106P 2006-06-12 2006-06-12
US80482406P 2006-06-14 2006-06-14
PCT/US2007/070847 WO2007146860A1 (en) 2006-06-12 2007-06-11 Led device with re-emitting semiconductor construction and optical element

Publications (2)

Publication Number Publication Date
EP2033236A1 EP2033236A1 (en) 2009-03-11
EP2033236A4 true EP2033236A4 (en) 2014-10-22

Family

ID=38832111

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07798367.4A Pending EP2033236A4 (en) 2006-06-12 2007-06-11 Led device with re-emitting semiconductor construction and optical element

Country Status (6)

Country Link
EP (1) EP2033236A4 (en)
JP (1) JP2009540615A (en)
KR (1) KR20090016694A (en)
CN (1) CN101467274B (en)
TW (1) TW200807769A (en)
WO (1) WO2007146860A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2010143026A (en) * 2008-03-21 2012-04-27 Конинклейке Филипс Элкектроникс Н.В. (Nl) LIGHTING DEVICE
US7741134B2 (en) * 2008-09-15 2010-06-22 Bridgelux, Inc. Inverted LED structure with improved light extraction
DE102009020127A1 (en) * 2009-03-25 2010-09-30 Osram Opto Semiconductors Gmbh led
JP2012033823A (en) * 2010-08-02 2012-02-16 Stanley Electric Co Ltd Light emitting device and method for manufacturing the same
JP2013541220A (en) 2010-10-27 2013-11-07 コーニンクレッカ フィリップス エヌ ヴェ LAMINATED SUPPORT FILM FOR MANUFACTURING LIGHT EMITTING DEVICE AND ITS MANUFACTURING METHOD
DE102012102119A1 (en) * 2012-03-13 2013-09-19 Osram Opto Semiconductors Gmbh Area light source
JP6097084B2 (en) 2013-01-24 2017-03-15 スタンレー電気株式会社 Semiconductor light emitting device
US10199549B2 (en) * 2013-05-15 2019-02-05 Lumileds Llc Light emitting device with an optical element and a reflector
EP2953176A1 (en) * 2014-06-02 2015-12-09 Swarovski Energy GmbH Lighting device
EP3271295B1 (en) * 2015-03-20 2021-07-07 Signify Holding B.V. Uv-c water purification device
WO2016150807A1 (en) * 2015-03-26 2016-09-29 Koninklijke Philips N.V. Light source
CN105429002B (en) * 2015-11-23 2018-10-19 深圳瑞波光电子有限公司 A kind of quanta trap semiconductor laser epitaxial structure and quantum-well laser
TWI759480B (en) * 2017-05-09 2022-04-01 光引研創股份有限公司 Optical device fabrication method
US11650403B2 (en) 2019-02-08 2023-05-16 Meta Platforms Technologies, Llc Optical elements for beam-shaping and illumination

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030006430A1 (en) * 2001-06-08 2003-01-09 Naoki Shibata Group III nitride compound semiconductor light-emitting element
US20040070000A1 (en) * 2002-10-10 2004-04-15 Ng Kee Yean Chip shaping for flip-chip light emitting diode
WO2006016326A2 (en) * 2004-08-06 2006-02-16 Philips Intellectual Property & Standards Gmbh Led lamp system
US20060092532A1 (en) * 2004-10-29 2006-05-04 Ouderkirk Andrew J High brightness LED package with multiple optical elements
US20060091784A1 (en) * 2004-10-29 2006-05-04 Conner Arlie R LED package with non-bonded optical element

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3014339B2 (en) * 1997-04-25 2000-02-28 カナレ電気株式会社 Semiconductor device having quantum wave interference layer
JP3559446B2 (en) * 1998-03-23 2004-09-02 株式会社東芝 Semiconductor light emitting element and semiconductor light emitting device
DE19955747A1 (en) * 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optical semiconductor device with multiple quantum well structure, e.g. LED, has alternate well layers and barrier layers forming super-lattices
JP2001339121A (en) * 2000-05-29 2001-12-07 Sharp Corp Nitride semiconductor light emitting device and optical device including the same
KR100641989B1 (en) * 2003-10-15 2006-11-02 엘지이노텍 주식회사 Nitride semiconductor light emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030006430A1 (en) * 2001-06-08 2003-01-09 Naoki Shibata Group III nitride compound semiconductor light-emitting element
US20040070000A1 (en) * 2002-10-10 2004-04-15 Ng Kee Yean Chip shaping for flip-chip light emitting diode
WO2006016326A2 (en) * 2004-08-06 2006-02-16 Philips Intellectual Property & Standards Gmbh Led lamp system
US20060092532A1 (en) * 2004-10-29 2006-05-04 Ouderkirk Andrew J High brightness LED package with multiple optical elements
US20060091784A1 (en) * 2004-10-29 2006-05-04 Conner Arlie R LED package with non-bonded optical element

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2007146860A1 *

Also Published As

Publication number Publication date
JP2009540615A (en) 2009-11-19
KR20090016694A (en) 2009-02-17
CN101467274A (en) 2009-06-24
EP2033236A1 (en) 2009-03-11
CN101467274B (en) 2012-02-29
TW200807769A (en) 2008-02-01
WO2007146860A1 (en) 2007-12-21

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