EP2557596A2 - Display device - Google Patents
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- EP2557596A2 EP2557596A2 EP12178549A EP12178549A EP2557596A2 EP 2557596 A2 EP2557596 A2 EP 2557596A2 EP 12178549 A EP12178549 A EP 12178549A EP 12178549 A EP12178549 A EP 12178549A EP 2557596 A2 EP2557596 A2 EP 2557596A2
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- EP
- European Patent Office
- Prior art keywords
- layer
- display device
- base film
- active layer
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000004888 barrier function Effects 0.000 claims abstract description 31
- 238000010521 absorption reaction Methods 0.000 claims abstract description 20
- 239000004033 plastic Substances 0.000 claims abstract description 13
- 229920003023 plastic Polymers 0.000 claims abstract description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 11
- 229920005591 polysilicon Polymers 0.000 claims abstract description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005224 laser annealing Methods 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000001419 dependent effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 127
- 239000010408 film Substances 0.000 description 38
- 239000010409 thin film Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000007715 excimer laser crystallization Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920006162 poly(etherimide sulfone) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1281—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor by using structural features to control crystal growth, e.g. placement of grain filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Recrystallisation Techniques (AREA)
- Micromachines (AREA)
Abstract
Description
- The present invention relates generally to a display device. More particularly, the invention relates to a display device using a base film including plastic.
- Recently, flexible flat display devices, which are lightweight and resistant to impact, have been developed by utilizing a base film made of a material such as plastic.
- Different flexible flat display devices may include, for example, organic light emitting diode display elements, liquid crystal display elements, and electrophoretic display (EPD) elements, among others.
- In addition, flexible flat display devices may include thin film transistors (TFTs). With advantages such as having good carrier mobility, a low temperature polysilicon (LTPS) TFT can be applicable to a high speed operational circuit and can be used for a CMOS circuit, so LTPS TFTS are commonly utilized from among various types of thin film transistors.
- The LTPS TFT includes a polysilicon layer formed by crystallizing an amorphous silicon layer. Methods for crystallizing the amorphous silicon layer include, for example, solid phase crystallization, excimer laser crystallization, and crystallization using a metal catalyst. The excimer laser crystallization method has been widely used because it allows for low temperature processes, so that a thermal effect on a substrate is relatively low and a polysilicon layer having relatively excellent carrier mobility over 100cm2/Vs can be made.
- However, when the crystallization process is performed using a laser on a base film made of plastic, laser beams passed through the polysilicon layer are partially absorbed by the base film, thereby causing deterioration of the base film. Such a deterioration of the base film not only causes a negative effect on product reliability, but also causes failures such as separation of the base film.
- The above information disclosed in this Background section is only for enhancement of understanding of the background of the described technology, and therefore, it may contain information that does not form the prior art that is already known in this country to a person of ordinary skill in the art.
- The present invention seeks to provide a display device that can stably form an active layer crystallized using a laser on a base film including a material such as plastic.
- A display device according to an embodiment of the invention therefore includes: a base film including plastic; an active layer on the base film, the active layer including a polysilicon layer formed by crystallizing an amorphous silicon layer using a laser; a barrier layer between the active layer and the base film; and a laser absorption layer between the barrier layer and the active layer.
- The barrier layer may include a plurality of inorganic layers.
- The display device may further include a buffer layer between the laser absorption layer and the active layer.
- The laser absorption layer may include an amorphous silicon layer.
- The active layer may be crystallized through excimer laser annealing (ELA).
- The base film may include a material including polyimide.
- The barrier layer may include a structure in which silicon oxide layers and silicon nitride layers are alternately layered.
- The buffer layer may include at least one of a tetra ethyl ortho silicate (TEOS) layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer.
- The base film, the barrier layer, the laser absorption layer, and the active layer may be flexible.
- A display device according to another embodiment includes: a base film including plastic; an active layer on the base film, the active layer including a polysilicon layer formed by crystallizing an amorphous silicon layer using a laser; a barrier layer between the active layer and the base film, the barrier layer including a plurality of inorganic layers; and a laser absorption layer between two of the plurality of inorganic layers.
- The display device may further include a buffer layer between the barrier layer and the active layer.
- According to embodiments of the present invention, a display can have a stably formed active layer crystallized using a laser on a base film including a material such as plastic.
- At lest some of the above and other features of the invention are set out in the claims.
-
FIG. 1 is a cross-sectional view of a display device according to a first embodiment of the invention; -
FIG. 2 is an enlarged cross-sectional view of a portion ofFIG. 1 ; -
FIG. 3 is a cross-sectional view of a display device according to a second embodiment of the invention; and -
FIG. 4 is an enlarged cross-sectional view of a portion ofFIG. 3 . - The present invention will be described more fully hereinafter with reference to the accompanying drawings, in which certain embodiments of the invention are shown. As those skilled in the art will recognize, the described embodiments may be modified in various different ways without departing from the scope of the present invention.
- Elements having the same or similar structures throughout the embodiments are denoted by the same reference numerals and are described in detail for a first embodiment. In subsequent embodiments, only the elements other than the same or similar elements will be described.
- The drawings are schematic and not proportionally scaled. Relative scales and ratios in the drawings are enlarged or reduced for the purpose of convenience, and the scales may be random and the invention should not be limited thereto. In addition, it will be understood that when an element is referred to as being "on" another element, it can be directly on the other element, or one or more intervening elements may be present therebetween.
- The embodiments described include details that are not essential to the invention. Therefore, various modifications from them are to be expected. Accordingly, the scope of the invention should not be limited to the specific shapes of shown regions, and may for example, also include modifications or variations in the shapes by manufacturing.
- Hereinafter, a
display device 101 according to a first embodiment of the invention will be described with reference toFIG. 1 andFIG. 2 . - As shown in
FIG. 1 , thedisplay device 101 according to this first embodiment includes abase film 100, abarrier layer 110, alaser absorption layer 200, athin film transistor 20, and an organiclight emitting element 70. - The
thin film transistor 20 includes anactive layer 132, agate electrode 155, asource electrode 176, and adrain electrode 177. In this embodiment, thethin film transistor 20 has a top gate structure in which thegate electrode 155 is disposed on theactive layer 132. - The
active layer 132 includes a polysilicon layer crystallized from an amorphous silicon layer using a laser. The crystallization method using a laser may be, for example, an excimer laser annealing (ELA) method in particular. - In addition, the
display device 101 further includes agate insulating layer 140 for insulating theactive layer 132 of thethin film transistor 20 from thegate electrode 155 and aninterlayer insulating layer 160 for insulating thegate electrode 155 from thesource electrode 176 and thedrain electrode 177. - The organic
light emitting element 70 includes apixel electrode 710 connected to thedrain electrode 177 of thethin film transistor 20, anorganic emission layer 720 on thepixel electrode 710, and acommon electrode 730 on theorganic emission layer 720. Here, thepixel electrode 710 is a positive (+) electrode, which is a hole injection electrode and thecommon electrode 730 is a negative (-) electrode, which is an electron injection electrode. However, the invention is not limited thereto, and for example, thepixel electrode 710 may be the negative electrode and thecommon electrode 730 may be the positive electrode, according to a particular driving method of thedisplay device 101. - Holes from the
pixel electrode 710 and electrons from thecommon electrode 730 are injected into theorganic emission layer 720, and light emission occurs when excitons, which are combinations of holes and electrons, drop from an excited state to a ground state. - The
display device 101 further includes apixel defining layer 190 having anopening 195 exposing thepixel electrode 710 to define a light emission area. Theorganic emission layer 720 is positioned on thepixel electrode 710 in the opening 195 of thepixel defining layer 190. - In addition, the
display device 101 further includes an additionalinsulating layer 180 for insulating thepixel electrode 710 from thesource electrode 176. The additionalinsulating layer 180 in this case has a planarization or planarizing characteristic, so that it can make theorganic emission layer 720 substantially uniformly disposed on thepixel electrode 710. - Further, in the
display device 101 according to this embodiment, the structure of the organiclight emitting element 70 and thethin film transistor 20 are not limited to the structures shown inFIG. 2 . The structures of the organiclight emitting element 70 and thethin film transistor 20 may be changed in a variety of ways and can be easily modified by a person skilled in the art. - The
base film 100 is made of or includes a plastic. Particularly, thebase film 100 may be made of polyimide having excellent heat resistance, chemical resistance, durability, and electric insulation. However, the invention is not limited thereto, and thebase film 100 may be made of, for example, polyethylene etherphtalate, polyethylene naphthalate, polycarbonate, polyarylate, polyetherimide, or polyethersulfone. - The
barrier layer 110 prevents permeation of moisture or oxygen. Thebase film 100 made of plastic is more permeable to moisture or oxygen than a substrate made of glass. Thus, thebarrier layer 110 is positioned on thebase film 100 to prevent or reduce moisture or oxygen from permeating past thebase film 100 and negatively affecting the organiclight emitting element 70 on thebase film 100. - As shown in
FIG. 2 , thebarrier layer 110 includes a plurality ofinorganic layers barrier layer 110 has a structure in whichsilicon oxide layers barrier layer 110 may include various different types of inorganic layers. - A
laser absorption layer 200 prevents or reduces parts of laser beams radiated during a process of forming theactive layer 132 of thethin film transistor 20 from passing through thebarrier layer 110 toward thebase film 100. If the laser beams reach thebase film 100, the laser beams can be absorbed by thebase film 100, which may deteriorate thebase film 100. Therefore, thelaser absorption layer 200 prevents the laser beams from reaching thebase film 100 by absorbing the laser beams moving toward thebase film 100. - In this embodiment, an amorphous silicon layer is used as the
laser absorption layer 200. The amorphous silicon layer used as thelaser absorption layer 200 can be partially crystallized while absorbing the laser beams. - The
buffer layer 120 is arranged on thelaser absorption layer 200. Thebuffer layer 120 includes at least one of a tetra ethyl ortho silicate (TEOS) layer, a silicon nitride layer, a silicon oxide layer, or a silicon oxynitride layer.FIG. 2 illustrates atri-layered buffer layer 120 that includes asilicon nitride layer 121, asilicon oxide layer 122, and aTEOS layer 123. - Meanwhile, the
buffer layer 120 may be omitted in thedisplay device 101 in some embodiments. However, thebuffer layer 120 additionally blocks moisture or oxygen that passed through thebarrier layer 110, and also planarizes the surface to stably form theactive layer 132. - The
active layer 132 of thethin film transistor 20 is disposed on thebuffer layer 120. As described above, theactive layer 132 is formed by patterning the polysilicon layer that is formed by crystallizing the amorphous silicon layer using a laser. - In addition, as shown in
FIG. 1 , thedisplay device 101 may further include a thinfilm encapsulation layer 300 covering the organiclight emitting element 70. The thinfilm encapsulation layer 300 may have a structure in which at least one of a plurality of inorganic layers and at least one of a plurality of organic layers are layered. Like thebase film 100 and thebarrier layer 110, the thinfilm encapsulation layer 300 prevents or reduces permeation of moisture or oxygen into the organiclight emitting element 70 while protecting the organiclight emitting element 70. - In addition, the
display device 101 is not limited to an organic light emitting diode display. Thus, embodiments of the invention can be applied to any display device that includes a thin film transistor using a polysilicon layer crystallized by a laser. Such display devices include, for example, liquid crystal displays and electrophoretic display (EPD) devices. - With such a configuration, the
display device 101 according to this embodiment of the invention can stably form anactive layer 132 crystallized using a laser, on abase film 100 made of or including plastic. That is, separation of thebase film 100 from abarrier layer 110 caused by deterioration of thebase film 100 due to the laser beams during the forming of theactive layer 132 can be effectively prevented or reduced. - Hereinafter, a
display device 102 according to a second embodiment of the invention will be described with reference toFIG. 3 andFIG. 4 . - As shown in
FIG. 3 , in thedisplay device 102 according to this embodiment, alaser absorption layer 200 is disposed in the middle of abarrier layer 110. - Particularly, as shown in
FIG. 4 , thelaser absorption layer 200 is positioned between a plurality ofinorganic layers barrier layer 110. Thebarrier layer 110 includessilicon oxide layers laser absorption layer 200 may be positioned in at least one space between thesilicon oxide layers - With such a configuration, the
display device 102 according to this second embodiment can also stably form theactive layer 132 crystallized using a laser beam, on abase film 100 made of or including plastic. That is, separation of thebase film 100 from thebarrier layer 110 caused by deterioration of thebase film 100 due to the laser beams during the forming of theactive layer 132 can be effectively prevented or reduced. - While the invention has been described in connection with what are presently considered to be practical embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but is instead intended to cover various modifications and equivalent arrangements included within the scope of the appended claims.
Claims (11)
- A display device comprising:a base film comprising plastic;an active layer on the base film, the active layer comprising a polysilicon layer formed by crystallizing an amorphous silicon layer using a laser;a barrier layer between the active layer and the base film; anda laser absorption layer located between at least a part of the barrier layer and the active layer.
- A display device according to claim 1, wherein the barrier layer comprises a plurality of inorganic layers.
- A display device according to claim 1 or 2, further comprising a buffer layer between the laser absorption layer and the active layer.
- A display device according to any preceding claim, wherein the laser absorption layer comprises an amorphous silicon layer.
- A display device according to any preceding claim, wherein the active layer is crystallized through excimer laser annealing (ELA).
- A display device according to any preceding claim, wherein the base film comprises a material including polyimide.
- A display device according to any preceding claim, wherein the barrier layer comprises a structure in which silicon oxide layers and silicon nitride layers are alternately stacked.
- A display device according to claim 3 or any claim dependent upon claim 3, wherein the buffer layer comprises at least one of a tetra ethyl ortho silicate (TEOS) layer, a silicon nitride layer, a silicon oxide layer, or a silicon oxynitride layer.
- A display device according to any preceding claim, wherein the base film, the barrier layer, the laser absorption layer, and the active layer are flexible.
- A display device according to claim 1, wherein the barrier layer comprises a plurality of inorganic layers; and
the laser absorption layer is situated between two of the plurality of inorganic layers. - A display device according to claim 10, further comprising a buffer layer between the barrier layer and the active layer.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110079673A KR20130017312A (en) | 2011-08-10 | 2011-08-10 | Display device |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2557596A2 true EP2557596A2 (en) | 2013-02-13 |
EP2557596A3 EP2557596A3 (en) | 2013-09-04 |
EP2557596B1 EP2557596B1 (en) | 2017-09-06 |
Family
ID=47040524
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP12178549.7A Active EP2557596B1 (en) | 2011-08-10 | 2012-07-30 | Display device |
Country Status (5)
Country | Link |
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US (1) | US20130037804A1 (en) |
EP (1) | EP2557596B1 (en) |
KR (1) | KR20130017312A (en) |
CN (1) | CN102931207B (en) |
TW (1) | TWI570979B (en) |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9812338B2 (en) * | 2013-03-14 | 2017-11-07 | Cree, Inc. | Encapsulation of advanced devices using novel PECVD and ALD schemes |
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KR101049805B1 (en) * | 2008-12-30 | 2011-07-15 | 삼성모바일디스플레이주식회사 | Method for manufacturing polycrystalline silicon, thin film transistor, method for manufacturing same, and organic light emitting display device comprising the same |
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TWI570979B (en) | 2017-02-11 |
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CN102931207B (en) | 2018-05-01 |
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