|Número de publicación||US20010000866 A1|
|Tipo de publicación||Solicitud|
|Número de solicitud||US 09/727,978|
|Fecha de publicación||10 May 2001|
|Fecha de presentación||29 Nov 2000|
|Fecha de prioridad||11 Mar 1999|
|También publicado como||CN1191614C, CN1415115A, DE60038250D1, DE60038250T2, EP1238421A1, EP1238421A4, EP1238421B1, US6305314, US6451119, WO2001045158A1|
|Número de publicación||09727978, 727978, US 2001/0000866 A1, US 2001/000866 A1, US 20010000866 A1, US 20010000866A1, US 2001000866 A1, US 2001000866A1, US-A1-20010000866, US-A1-2001000866, US2001/0000866A1, US2001/000866A1, US20010000866 A1, US20010000866A1, US2001000866 A1, US2001000866A1|
|Inventores||Ofer Sneh, Carl Galewski|
|Cesionario original||Ofer Sneh, Galewski Carl J.|
|Exportar cita||BiBTeX, EndNote, RefMan|
|Citada por (153), Clasificaciones (43), Eventos legales (5)|
|Enlaces externos: USPTO, Cesión de USPTO, Espacenet|
1. The present invention is in the area of chemical vapor deposition, and pertains more particularly to new methods and apparatus for depositing films by atomic layer deposition. This invention is an extension of these new methods and particularly covers a method for preventing parasitic chemical vapor deposition and the resultant contamination.
2. In the manufacture of integrated circuits, deposition of thin films of many pure and compound materials is necessary, and many techniques have been developed to accomplish such depositions. In recent years the dominant technique for deposition of thin films in the art has been chemical vapor deposition (CVD), which has proven to have superior ability to provide uniform even coatings, and to coat relatively conformally into vias and over other high-aspect and uneven features in wafer topology. As device density has continued to increase and geometry has continued to become more complicated, even the superior conformal coating of CVD techniques has been challenged, and new and better techniques are needed.
3. The approach of a variant of CVD, Atomic Layer Deposition has been considered for improvement in uniformity and conformality, especially for low temperature deposition. However the practical implementation of this technology requires a solution to higher purity and higher throughput. This patent addresses these requirements.
4. Atomic Layer Deposition
5. In the field of CVD a process known as Atomic Layer Deposition (ALD) has emerged as a promising candidate to extend the abilities of CVD techniques, and is under rapid development by semiconductor equipment manufacturers to farther improve characteristics of chemical vapor deposition. ALD is a process originally termed Atomic Layer Epitaxy, for which a competent reference is: Atomic Layer Epitaxy, edited by T. Suntola and M. Simpson, published by Blackie, Glasgo and London in 1990. This publication is incorporated herein by reference.
6. Generally ALD is a process wherein conventional CVD processes are divided into single-monolayer deposition steps, wherein each separate deposition step theoretically goes to saturation at a single molecular or atomic monolayer thickness, and self-terminates.
7. The deposition is the outcome of chemical reactions between reactive molecular precursors and the substrate. In similarity to CVD, elements composing the film are delivered as molecular precursors. The net reaction must deposit the pure desired film and eliminate the “extra” atoms that compose the molecular precursors (ligands). In the case of CVD the molecular precursors are fed simultaneously into the CVD reactor. A substrate is kept at temperature that is optimized to promote chemical reaction between the molecular precursors concurrent with efficient desorption of byproducts. Accordingly, the reaction proceeds to deposit the desired pure film.
8. For ALD applications, the molecular precursors are introduced into the ALD reactor separately. This is practically done by flowing one precursor at a time, i.e. a metal precursor—MLx (M=Al, W, Ta, Si etc.) that contains a metal element—M which is bonded to atomic or molecular ligands—L to make a volatile molecule. The metal precursor reaction is typically followed by inert gas purging to eliminate this precursor from the chamber prior to the separate introduction of the other precursor.
9. This purge step (or sometimes a pump-down step) is key for ALD films without the undesired CVD component. During the purge (evacuation) step the last used chemical is removed from the chamber and gas introduction lines, enabling introduction of a different chemical. An ALD reaction will take place only if the surface is prepared to react directly with the molecular precursor. Accordingly the surface is typically prepared to include hydrogen-containing ligands −AH that are reactive with the metal precursor. Surface-molecule reactions can proceed to react with all the ligands on the surface and deposit a monolayer of the metal with its passivating ligand: substrate —AH+MLx→substrate−AMLy+HL, where HL is the exchange reaction by-product. During the reaction the initial surface ligands—AH are consumed and the surface becomes covered with L ligands, that cannot further react with the metal precursor —MLx. Therefore, the reaction self-saturates when all the initial ligands are replaced with −MLy species.
10. After completing the metal precursor reaction all of the metal precursor is typically removed from the reactor prior to the introduction of another precursor. The second type of precursor is used to restore the surface reactivity towards the metal precursor, i.e. eliminating the L ligands and redepositing AH ligands.
11. Most ALD processes have been applied to deposit compound films. In this case the second precursor is composed of a desired (usually nonmetallic) element—A (i.e. O, N, S), and hydrogen using, for example H2O, NH3, or H2S. The reaction: −ML+AHz→−M—AH+HL (for the sake of simplicity the chemical reactions are not balanced) converts the surface back to be AH-covered. The desired additional element—A is deposited and the ligands L are eliminated as volatile by-product. Again, the reaction consumes the reactive sites (this time the L terminated sites) and self-saturates when the reactive sites are entirely depleted.
12. The sequence of surface reactions that restores the surface to the initial point is called the ALD deposition cycle. Restoration to the initial surface is the keystone of ALD. It implies that films can be layered down in equal metered sequences that are all identical in chemical kinetics, deposition per cycle, composition and thickness. Self-saturating surface reactions make ALD insensitive to transport nonuniformity either from flow engineering or surface topography (i.e. deposition into high aspect ratio structures). Non uniform flux can only result in different completion time at different areas. However, if each of the reactions is allowed to complete on the entire area, the different completion kinetics bear no penalty.
13. As is often the case with process development, the initial promised advantages of a new technique do not, in the end, attain their full initial promise. Unfortunately, ALD has a serious fundamental problem. Unlike CVD reactions that are of a continuous steady state nature, ALD reactions follow kinetics of molecular-surface interaction. Kinetics of molecular-surface reactions depends on the individual reaction rate between a molecular precursor and a surface reactive site and the number of available reactive sites. As the reaction proceeds to completion, the surface is converted from being reactive to non-reactive. As a result the reaction rate is slowing down during the deposition. In the simplest case the rate, dN/dt is proportional to the number of reactive sites, dN/dt=−kN, where N is the number of reactive sites and k is the (single site) reaction rate. Eliminating reactive sites (or growing of the already-reacted sites) follows an exponential time dependence kN(t)=kN0exp(−kt). This fundamental property of molecule-surface kinetics was named after the great scientist Langmuir, and is quite well-known in the art.
14. The interpretation of Langmuirian kinetics limitations illustrates a serious drawback of ALD and a severe deviation from the ideal picture. Accordingly, the self-terminating reactions never really self-terminate (they would require an infinite time because the rate is exponentially decreasing). It means that under practical conditions the surface is never entirely reacted to completion after a deposition cycle. If the surface is not completely reacted there are leftover undesired elements in the film. For example, if the ML, reaction cannot totally consume the surface −AH sites, the film will have H incorporation. Likewise, if the AHy reaction is not carried to completion, undesired L incorporation is inevitable. Clearly, the quality of the film depends on the impurity levels. The throughput-quality tradeoff is of particular concern because it carries an exponential throughput penalty to attain a reduction of impurity levels.
15. In conventional atomic layer deposition one must accept low throughput to attain high-purity film, or accept lower-purity films for higher throughput. What is clearly needed is an apparatus and methods which not only overcome the Langmuirian limitations but simultaneously provide higher-purity films than have been available in the prior art methods. Such apparatus and methods are provided in embodiments of the present invention, taught in enabling detail below.
16. In addition to the above ideal situation, ALD chemicals, such as the MLx and AHz in the above example are typically extremely reactive, and will lead to extensive undesired CVD side reactions if they coexist in the chamber even at trace levels. Since CVD is a very undesirable companion, fast and efficient purge has been the most difficult and challenging aspect of engineering high throughput ALD apparatuses.
17. Chemical delivery lines must be short and free of trapped volume to facilitate efficient purging of chemicals. However, some limitation on efficient purge come from line surface outgassing that is difficult to avoid. Accordingly, some trace of chemical mixing is impossible to suppress with throughput limited short purge times. What is needed is a rapid method of removing trace quantities of the previously used chemical precursor prior to introduction of the desired new chemical precursor.
18. Our invention, which provides the clear and present need, provides an ALD Pre-Reactor as an apparatus and process that eliminates trace amounts of chemical mixing without CVD contribution to the ALD film on the substrates.
19. In a preferred embodiment of the present invention a method for minimizing parasitic chemical vapor deposition during an atomic layer deposition process is provided, comprising steps of (a) imposing a pre-reaction chamber between gas sources and a substrate to be coated; and (b) heating a surface in the pre-reaction chamber to a temperature sufficient to cause contaminant elements to deposit by CVD reaction on the heated surface.
20. In an alternative embodiment a pre-reaction chamber for an atomic layer deposition system is provided, comprising a passage for delivery of gases in alternating, incremental fashion from a gas source to a gas distribution apparatus; and a heated surface within the pre-reaction chamber for causing contaminant elements to deposit prior to the gases entering the gas distribution apparatus.
21. In the embodiments of the invention taught in enabling detail below, for the first time a method and apparatus is provided that effectively removes contaminant gases in atomic layer deposition processes, and allows cycle times to be significantly increased as a result.
22.FIG. 1 is a generalized diagram of a reactor and associated apparatus for practicing a radical-assisted sequential CVD process according to an embodiment of the present invention.
23.FIG. 2 is a step diagram illustrating the essential steps of an atomic layer deposition process.
24.FIG. 3 is a step diagram illustrating steps in a radical-assisted CVD process according to an embodiment of the present invention.
25.FIG. 4 illustrates a typical time dependent chemical precursor partial pressure curve for systems with well designed gas flow source and pulsing subsystems.
26.FIG. 5 represents a time dependent chemical precursor partial pressure curve where sharply defined “flow off” conditions are achieved as a result of practicing an embodiment of the present invention.
27.FIG. 6 is a generalized diagram of a reactor and associated apparatus for achieving radical assisted sequential CVD according to an improved embodiment of the present invention which eliminates undesired CVD side reactions.
28.FIG. 7 illustrates a second implementation of the reactor in FIG. 6.
29.FIG. 8 illustrates a third implementation of the reactor in FIG. 6
30.FIG. 9 illustrates a fourth implementation of the reactor in FIG. 6.
31. The inventor has developed an enhanced variation of ALD which alters the conventional surface preparation steps of ALD and overcomes the problems of conventional ALD, producing high throughput without compromising quality. The inventor terms the new and unique process Radical-Assisted Sequential CVD (RAS-CVD).
32.FIG. 1 is a generalized diagram of a system 11 for practicing RAS-CVD according to an embodiment of the present invention. In this exemplary system a deposition chamber 13 has a heatable hearth for supporting and heating a substrate 19 to be coated, and a gas distribution apparatus, such as a showerhead 15, for delivering gaseous species to the substrate surface to be coated. Substrates are introduced and removed from chamber 13 via a valve 21 and substrate-handling apparatus not shown. Gases are supplied from a gas sourcing and pulsing apparatus 23, which includes metering and valving apparatus for sequentially providing gaseous materials. An optional treatment apparatus 25 is provided for producing gas radicals from gases supplied from apparatus 23.
33. The term radicals is well-known and understood in the art, but will be qualified again here to avoid confusion. By a radical is meant an unstable species. For example, oxygen is stable in diatomic form, and exists principally in nature in this form. Diatomic oxygen may, however, be caused to split to monatomic form, or to combine with another atom to produce ozone, a molecule with three atoms. Both monatomic oxygen and ozone are radical forms of oxygen, and are more reactive than diatomic oxygen. In many cases in embodiments of the present invention the radicals produced and used are single atom forms of various gases, such as oxygen, hydrogen, and nitrogen, although the invention is not strictly limited to monatomic gases.
34.FIG. 2 is a step diagram of a conventional Atomic Layer Deposition process, and is presented here as contrast and context for the present invention. In conventional ALD, as shown in FIG. 2, in step 31 a first molecular precursor is pulsed in to a reactor chamber, and reacts with the surface to produce (theoretically) a monolayer of a desired material. Often in these processes the precursor is a metal-bearing gas, and the material deposited is the metal; Tantalum from TaCl5, for example.
35. In step 33 in the conventional process an inert gas is pulsed into the reactor chamber to sweep excess first precursor from the chamber.
36. In step 35 in the conventional system a second precursor, typically non-metallic, is pulsed into the reactor. The primary purpose of this second precursor is to condition the substrate surface back toward reactivity with the first precursor. In many cases the second precursor also provides material from the molecular gas to combine with metal at the surface, forming compounds such as an oxide or a nitride with the freshly-deposited metal.
37. At step 37 the reactor chamber is purged again to remove excess of the second precursor, and then step 31 is repeated. The cycle is repeated as many times as is necessary to establish a desired film.
38.FIG. 3 is a step diagram illustrating steps in a radical-assisted CVD process according to an embodiment of the present invention. In the unique process illustrated by FIG. 3 the first steps, steps 41 and 43, are the same as in the conventional process. A first precursor is pulsed in step 41 to react with the substrate surface forming a monolayer of deposit, and the chamber is purges in step 43. The next step is unique. In step 45 single or multiple radical species are pulsed to the substrate surface to optionally provide second material to the surface and to condition the surface toward reactivity with the first molecular precursor in a subsequent step. Then step 41 is repeated. There is no need for a second purge, and the cycle is repeated as often as necessary to accomplish the desired film.
39. Step 45 may be a single step involving a single radical species. For example, the first precursor may deposit a metal, such as in W from WF6, and the radical species in step 45 may be atomic hydrogen. The atomic hydrogen very quickly and effectively neutralizes any remaining F to HF, and terminates the surface with atomic hydrogen, providing reactive surface for the next pulse of WF6.
40. In many cases step 45 will be a compound step comprising substeps involving different radical species. A good example is a sequence of atomic hydrogen followed by atomic oxygen, followed by atomic hydrogen again. The first hydrogen step neutralizes Cl or other remaining ligand, the atomic oxygen provides an oxide of the freshly-deposited metal, and the second atomic hydrogen terminated the surface with (OH) in preparation for the next metal precursor step.
41. There are a broad variety of materials and combinations in step 45, and many are disclosed in more detail below, along with a more complete explanation of process chemistry.
42. In RAS-CVD, following the metal precursor reaction, highly reactive radical species are introduced to quickly react with products of the metal precursor reaction and to prepare the surface for the next metal precursor reaction. Radical species, as introduced above, are reactive atoms or molecular fragments that are chemically unstable and therefore are extremely reactive. In addition, radicals chemisorb to surfaces with virtually 100% efficiency. Radicals may be created in a number of ways, and plasma generation has been found to be an efficient and compatible means of preparation.
43. RAS-CVD processes use only a single molecular precursor, in many cases a metal precursor. Surface preparation as well as the deposition of nonmetallic elements are accomplished by atom-surface reactions. Following the metal precursor reaction, The −ML terminated surface is reacted with hydrogen atoms to convert the surface into −MH and eliminate HL by-product. Unlike molecule-surface reactions, atom-surface reactions do not depend on the number density of reactive sites. Most atoms (except for noble gases) stick very efficiently to surfaces in an irreversible process because atomic desorption is usually unfavorable. The atoms are highly mobile on non-reactive sites and very reactive at reactive sites. Consequently, atom-surface reactions have linear exposure dependence, as well as high rates.
44. The −MH surface can be reacted with A atoms to yield a -M-A-surface. In this case some of the H ligands can be eliminated as AHy. For example the −MH surface can be reacted with oxygen atoms to deposit oxide compound. Alternatively, −MH surface can be reacted again with MLx for atomic layer controlled deposition of M metal films. For the deposition of nitride compound films, A is atomic nitrogen. The surface after the A atomic reaction is terminated with A- and AH. At this point an additional atomic reaction with hydrogen converts the surface to the desired AH ligands that are reactive towards the metal precursor. Alternatively, the MH surface can be reacted with a mixture of A and H atoms to convert the surface into −AH terminated surface with one less step. All the above described reactions are radical-surface reactions that are fast and efficient and depend linearly on exposure. In addition, the final hydrogen reaction results in a complete restoration to the initial surface without any incorporation of impurities.
45. Another throughput benefit of RAS-CVD is that a single purge step after the metal precursor step is needed, rather than the two purge steps needed in the conventional process. Purge steps are expected by most researchers to be the most significant throughput-limiting step in ALD processes. Another advantage is that RAS-CVD promises longer system uptime and reduced maintenance. This is because atomic species can be efficiently quenched on aluminum walls of the deposition module. Downstream deposition on the chamber and pumping lines is therefore virtually eliminated. RAS-CVD eliminates the use of H2O and NH3 that are commonly applied for oxides and nitrides deposition (respectively) in the prior art. These precursors are notorious to increase maintenance and downtime of vacuum systems.
46. According to the above a typical RAS-CVD cycle for a metal oxide film will comprise steps as follows:
47. 1. Metal precursor reaction with —OH (hydroxyl) terminated surface to attach —O-MLY and eliminate the hydrogen by HL desorption. The surface becomes covered with L ligands, i.e. in the case of TaCl5 the surface becomes covered with Cl atoms.
48. 2. Purge with inert gas to sweep away excess metal precursor.
49. 3. Atomic hydrogen step—eliminates the ligands L by HL desorption and terminates the surface with hydrogen.
50. 4. Atomic oxygen step—reacts with monolayer of metal to form oxide. Atomic hydrogen again to leave hydroxyl saturated surface for next metal precursor step.
51. At this point the quality of oxide films (i.e. insulation properties, dielectric strength, charge trapping) can be improved by running steps 4+5 for multiple times. For example: Al2O3 RAS-CVD can be realized from trimethylaluminum Al(CH3)3, hydrogen and oxygen exposures. Al(CH3)3 reacting with —OH terminated surface will deposit —OAl(CH3)x concurrent with the desorption of methane (CH4). The —OAl(CH3)x (x=1,2) surface will be treated with H atoms to eliminate x number of methane molecules and terminate the surface with —OAlH. This surface after consecutive (or concurrent) reaction with O atoms and H atoms will be terminated —OAl—OH which is the restoration state. At this point, the RAS-CVD process can proceed by applying another Al(CH3)3 reaction. Alternatively, the —OAl—OH surface can be exposed to another cycles of O and H atoms. At temperature above 100° C. this process will exchange OH groups and Al—O—Al bridge sites and the resulted OAl—OH surface will be more thermodynamically favorable than the beginning surface, because the process eliminates the more strained (Al—O—)n ring structures as well as titrating away defects and broken bonds). Since the atomic reactions are rather fast, these quality improvements are not expected to be a major throughput concern. In fact, ultimate quality may be achieved by applying the O, H cycles for several times. Following, a given number of O, H atomic reactions the sequence will continue with the next Al(CH3)3 reaction.
52. 6. Repeat steps from 1.
53. For metal nitrides atomic nitrogen is substituted for oxygen. For pure metal depositions the oxygen/nitrogen step may be eliminated in favor of a single atomic hydrogen step, such as for tungsten films. The hydrogen saturated surface after the first atomic hydrogen step is reactive with WF6 to produce the pure metal.
54. The generic nature of RAS-CVD is advantageous for multiple layer combination films of different oxides, different nitrides, oxides with nitrides, different metals and metals with compound films.
55. In another unique process, useful for barrier layers, the WN process may be combined with the pure W process to produce alternating W and WN layers in a variety of schemes to suppress polycrystallization and to reduce the resistivity of the barrier layer. Other properties, such as electromigration may be controlled by an ability to provide a graded layer of WN with reduced nitrogen content at the copper interface for such applications.
56. In embodiments of the invention a broad variety of process chemistries may be practiced, providing a broad variety of final films. In the area of pure metals, for example, the following provides a partial, but not limiting list:
57. 1. Tungsten from tungsten hexafluoride.
58. 2. Tantalum from tantalum pentachloride.
59. 3. Aluminum from either aluminum trichloride or trimethylaluminum.
60. 4. Titanium from titanium tetrachloride or titanium tetraiodide.
61. 5. Molybdenum from molybdenum hexafluoride.
62. 6. Zinc from zinc dichloride.
63. 7. Hafnium from hafnium tetrachloride.
64. 8. Niobium from niobium pentachloride.
65. 9. Copper from Cu3Cl3.
66. In the area of oxides the following is a partial but not limiting list:
67. 1. Tantalum pentoxide from tantalum pentachloride.
68. 2. Aluminum oxide from trimethylaluminum or aluminum trichloride.
69. 3. Titanium oxide from titanium tetrachloride or titanium tetraiodide.
70. 4. Niobium pentoxide from niobium pentachloride.
71. 5. Zirconium oxide from zirconium tetrachloride.
72. 6. Hafnium oxide from hafnium tetrachloride.
73. 7. Zinc oxide from zinc dichloride.
74. 8. Molybdenum oxide from molybdenum hexafluoride or molybdenum pentachloride.
75. 9. Manganese oxide from manganese dichloride.
76. 10. Tin oxide from tin tetrachloride.
77. 11. Indium oxide from indium trichloride or trimethylindium.
78. 12. Tungsten oxide from tungsten hexafluoride.
79. 13. Silicon dioxide from silicon tetrachloride.
80. In the area of nitrides, the following is a partial but not limiting list:
81. 1. Tungsten nitride from tungsten hexafluoride.
82. 2. Tantalum nitride from tantalum pentachloride.
83. 3. Aluminum nitride from aluminum trichloride or trimethylaluminum.
84. 4. Titanium nitride from titanium tetrachloride.
85. 5. Silicon nitride from silicon tetrachloride or dichlorosilane.
86. 6. Gallium nitride from trimethylgallium.
87. Hardware Requirements
88. Another advantage of RAS-CVD is that it is compatible in most cases with ALD process hardware. The significant difference is in production of atomic species and/or other radicals, and in the timing and sequence of gases to the process chamber. Production of the atomic species can be done in several ways, such as (1) in-situ plasma generation, (2) intra-showerhead plasma generation, and (3) external generation by a high-density remote plasma source or by other means such as UV dissociation or dissociation of metastable molecules. referring again to FIG. 1, these methods and apparatus are collectively represented by apparatus 25.
89. Of the options, in-situ generation is the simplest design, but poses several problems, such as turn on-turn off times that could be a throughput limitation. Intra-showerhead generation has been shown to have an advantage of separating the atomic specie generation from the ALD space. The preferable method at the time of this specification is remote generation by a high-density source, as this is the most versatile method. The radicals are generated in a remote source and delivered to the ALD volume, distributed by a showerhead over the wafer in process.
90. It will be apparent to the skilled artisan that there are a variety of options that may be exercised within the scope of this invention as variations of the embodiments described above . . . some have already been described. For example, radicals of the needed species, such as hydrogen, oxygen, nitrogen, may be generated in several ways and delivered in the process steps. Further, ALD chambers, gas distribution, valving, timing and the like may vary in many particulars. Still further, many metals, oxides nitrides and the like may be produced, and process steps may be altered and interleaved to create graded and alternating films.
91. Apparatus and Concept for Minimizing Parasitic Chemical Vapor Deposition During Atomic Laver Deposition
92. In a further embodiment of the present invention an apparatus and method is provided for preventing contamination by CVD deposition during ALD processes. FIG. 4 is a generalized chemical precursor partial pressure vs. time curve 46 for a well behaved system using rapid pulsing of the chemical precursor species and purge steps. The partial pressure 47 of each active chemical precursor is qualitatively shown on the Y axis of the diagram against time on the X axis. The partial pressure of precursor “A” 49 and precursor “B” 50 are shown for convenience. Systems with more than two precursors would behave similarly with distinct partial pressure peaks for each chemical precursor.
93. Of particular note in FIG. 4 is that while the partial pressure of each precursor rises rapidly at the start of each pulse, there is a distinct “tail” at the end of each pulse. This “tail” represents an undesired condition where the precursor is not fully removed from the deposition system. This tail is a result of various real phenomena, such as, for example, the fact that gases molecules have a certain affinity for surfaces in conduits and chambers, and such surface-restrained molecules continue to evolve in a system after gas flow is shut off, a phenomenon known in the vacuum arts as outgasing. If the next precursor is introduced into the deposition chamber 59, FIG. 6 while the prior precursor is still present, an undesired CVD side reaction occurs and contaminates the desired film on the substrate 61 on FIG. 6. In addition to the contamination of the film, the undesired CVD reaction could nucleate in the gas phase leading to undesirable particle accumulation on the substrate 61 or in the deposition chamber 59.
94.FIG. 5 is an idealized chemical precursor partial pressure vs. time curve 51 for a well behaved system using rapid pulsing of the chemical precursor species, purge steps, and the innovative Pre-Reactor invention embodied in this patent application. The partial pressure 52 of each active chemical precursor is qualitatively shown on the Y axis of the diagram against time on the X axis. The partial pressure of precursor “A” 54 and precursor “B” 55 are shown for convenience. Systems with more than two precursors would behave similarly with distinct partial pressure peaks for each chemical precursor.
95. Of particular note in FIG. 5 is that the partial pressure of each precursor rises rapidly at the start of each pulse and falls rapidly at the end of each programmed flow pulse. The distinct chemical “tail” present in FIG. 4 is eliminated primarily as a result of an innovative Pre-Reactor described in this invention. The methods and apparatus used to remove the trace chemical precursor that causes this “tail” effect are described in enabling detail below.
96.FIG. 6 is a generalized diagram of a system 56 for practicing RAS-CVD according to an additional embodiment of the present invention. Although RAS-CVD is used as an example, the inventor intends it to be clear that the apparatus and methods of the present invention are not limited to RAS-CVD, but applicable in general to all sorts of ALD and many other sequential CVD processes.
97. In this exemplary system a deposition chamber 59 has a heatable hearth for supporting and heating a substrate 61 to be coated, and a gas distribution apparatus, such as a showerhead 60, for delivering gaseous species to the substrate surface to be coated. Substrates are introduced and removed (item 65) from chamber 59 via a valve 64 and substrate-handling apparatus not shown. Gases are supplied from a gas sourcing and pulsing apparatus 57, which includes metering and valving apparatus for sequentially providing gaseous materials. An optional treatment apparatus 58 is provided for producing gas radicals from gases supplied from apparatus 57. A Pre-Reactor 66 has been added to this system to provide improved control of unwanted CVD side reactions.
98. The pre-reactor may take various forms, and some of the possible variations are shown in FIG. 6, 7, 8 and 9, described in more detail below. All of the figures commonly utilize the gas sourcing and pulsing apparatus 57, the optional treatment apparatus for creating radicals 58, the gas distribution apparatus 60, the deposition chamber 59, a heating hearth 62 for heating substrate 61, a spent chemical effluent system 63, a substrate entry and removal 65 valve 64. These items are common in this exemplary system. In addition, some but not all implementations of the Pre-Reactor are shown. For example, in one embodiment, the gas distribution apparatus, such as a showerhead, may serve double duty, and be the pre-reactor chamber as well.
99. In FIG. 6, the Pre-Reactor 66 is shown as a physically separate chamber which is placed in the process gas pathway between the Optional Treatment Apparatus Producing Gas Radicals and the Gas Distribution Showerhead. The Pre-Reaction process may take place on any surface with sufficient activation energy supplied either by thermal heating, RF plasma, UV or by other means.
100.FIG. 7 is a generalized diagram of a system 67 for practicing RAS-CVD in a further embodiment of the present invention. In FIG. 7, two embodiments of the Pre-Reactor 68 are shown. The first is the incorporation of the Pre-Reactor 68 into the Gas Distribution Showerhead 60. In this case, the undesired CVD side reactions are caused to occur on a free-standing, thermally heated surface inside the Gas Distribution Showerhead 68. Such a thermally-heated surface may be provided in a wide variety of ways, and the form of the pre-reactor chamber can take a wide variety of forms as well, such as, for example, a long, coiled, heated conduit. The rapid depletion of the undesired chemical “tail” eliminates the possibility that the side reaction will occur on the substrate allowing a decrease in the time between each chemical reactant entering the system. In one preferred embodiment the necessary thermal input for the pre-reaction is provided by proximity of the showerhead apparatus to substrate 61, with heat transfer from the hearth and the substrate.
101.FIG. 8 is a generalized diagram of a further embodiment of the present invention providing system 69 for practicing RAS-CVD. In FIG. 8, two embodiments of the Pre-Reactor 70 are shown. The first is the incorporation of the Pre-Reactor 70 into the Gas Distribution Showerhead 60 which is conceptually similar to FIG. 7. In this case, the undesired CVD side reactions are caused to occur on the heated surface of the Gas Distribution Showerhead 68 itself, which is heated in this embodiment by hearth 62 and substrate 61 by virtue of near proximity of these elements to showerhead 60. Again, the rapid depletion of the undesired chemical “tail” eliminates the possibility that the side reaction will occur on the substrate allowing a decrease in the time between each chemical reactant entering the system.
102.FIG. 9 is a generalized diagram for a system 71 for practicing RAS-CVD in yet a further embodiment of the present invention. In FIG. 9, two embodiments of the Pre-Reactor 72 are shown. The first is the incorporation of the Pre-Reactor 72 into the Gas Distribution Showerhead 60 which is conceptually similar to FIG. 7. In this new embodiment, however, the undesired CVD side reactions are caused to occur within the combination Gas Distribution Showerhead 68 and Pre-Reactor 72 by activating the undesired CVD side reaction using an RF plasma generated within the showerhead. This process causes rapid depletion of the undesired chemical “tail” and eliminates the possibility that the side reaction will occur on the substrate allowing a decrease in the time between each chemical reactant entering the system
103. In addition to these variations it will be apparent to the skilled artisan that one may, by incorporating processes described herein, alternate process steps in a manner that alloys of two, three or more metals may be deposited, compounds may be deposited with two, three or more constituents, and such things as graded films and nano-laminates may be produced as well. These variations are simply variants using particular embodiments of the invention in alternating cycles, typically in-situ. There are many other variations within the spirit and scope of the invention, so the invention is limited only by the claims that follow. Further, in particular reference to the pre-reaction chamber aspects of the invention, it will be apparent to the skilled artisan that various deviations from the embodiments described will still fall within the spirit and scope of the present invention, and, in addition, many combinations of embodiments and variations may be made. For example, a plasma activation may readily be used in a pre-reaction chamber within the scope of the invention, wherein the chamber itself may assume any of a wide variety of forms.
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|US6620723||27 Jun 2000||16 Sep 2003||Applied Materials, Inc.||Formation of boride barrier layers using chemisorption techniques|
|US6638810||5 Nov 2001||28 Oct 2003||Applied Materials, Inc.||Tantalum nitride CVD deposition by tantalum oxide densification|
|US6660126||2 Mar 2001||9 Dic 2003||Applied Materials, Inc.||Lid assembly for a processing system to facilitate sequential deposition techniques|
|US6718126||14 Sep 2001||6 Abr 2004||Applied Materials, Inc.||Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition|
|US6720027||8 Abr 2002||13 Abr 2004||Applied Materials, Inc.||Cyclical deposition of a variable content titanium silicon nitride layer|
|US6729824||14 Dic 2001||4 May 2004||Applied Materials, Inc.||Dual robot processing system|
|US6734020||7 Mar 2001||11 May 2004||Applied Materials, Inc.||Valve control system for atomic layer deposition chamber|
|US6753248||27 Ene 2003||22 Jun 2004||Applied Materials, Inc.||Post metal barrier/adhesion film|
|US6765178||18 Dic 2001||20 Jul 2004||Applied Materials, Inc.||Chamber for uniform substrate heating|
|US6772072||22 Jul 2002||3 Ago 2004||Applied Materials, Inc.||Method and apparatus for monitoring solid precursor delivery|
|US6773507||7 Ago 2002||10 Ago 2004||Applied Materials, Inc.||Apparatus and method for fast-cycle atomic layer deposition|
|US6797340||10 Oct 2002||28 Sep 2004||Applied Materials, Inc.||Method for depositing refractory metal layers employing sequential deposition techniques|
|US6809026||18 Dic 2002||26 Oct 2004||Applied Materials, Inc.||Selective deposition of a barrier layer on a metal film|
|US6821563||29 Ene 2003||23 Nov 2004||Applied Materials, Inc.||Gas distribution system for cyclical layer deposition|
|US6821891||15 Nov 2002||23 Nov 2004||Applied Materials, Inc.||Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors|
|US6825134||24 Sep 2002||30 Nov 2004||Applied Materials, Inc.||Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow|
|US6825447||17 Dic 2002||30 Nov 2004||Applied Materials, Inc.||Apparatus and method for uniform substrate heating and contaminate collection|
|US6827978||11 Feb 2002||7 Dic 2004||Applied Materials, Inc.||Deposition of tungsten films|
|US6831004||13 Mar 2003||14 Dic 2004||Applied Materials, Inc.||Formation of boride barrier layers using chemisorption techniques|
|US6833161||26 Feb 2002||21 Dic 2004||Applied Materials, Inc.||Cyclical deposition of tungsten nitride for metal oxide gate electrode|
|US6838125||10 Jul 2002||4 Ene 2005||Applied Materials, Inc.||Method of film deposition using activated precursor gases|
|US6858547||27 Sep 2002||22 Feb 2005||Applied Materials, Inc.||System and method for forming a gate dielectric|
|US6866746||21 Nov 2002||15 Mar 2005||Applied Materials, Inc.||Clamshell and small volume chamber with fixed substrate support|
|US6868859||29 Ene 2003||22 Mar 2005||Applied Materials, Inc.||Rotary gas valve for pulsing a gas|
|US6905737||11 Oct 2002||14 Jun 2005||Applied Materials, Inc.||Method of delivering activated species for rapid cyclical deposition|
|US6939801||13 Dic 2002||6 Sep 2005||Applied Materials, Inc.||Selective deposition of a barrier layer on a dielectric material|
|US6939804||18 Nov 2002||6 Sep 2005||Applied Materials, Inc.||Formation of composite tungsten films|
|US6955211||17 Jul 2002||18 Oct 2005||Applied Materials, Inc.||Method and apparatus for gas temperature control in a semiconductor processing system|
|US6958296||22 Jul 2003||25 Oct 2005||Applied Materials, Inc.||CVD TiSiN barrier for copper integration|
|US6994319||29 Ene 2003||7 Feb 2006||Applied Materials, Inc.||Membrane gas valve for pulsing a gas|
|US7041335||21 May 2003||9 May 2006||Applied Materials, Inc.||Titanium tantalum nitride silicide layer|
|US7060132||11 Oct 2002||13 Jun 2006||Asm International N.V.||Method and apparatus of growing a thin film|
|US7066194||19 Jul 2002||27 Jun 2006||Applied Materials, Inc.||Valve design and configuration for fast delivery system|
|US7067439||19 Sep 2002||27 Jun 2006||Applied Materials, Inc.||ALD metal oxide deposition process using direct oxidation|
|US7081271||18 Jul 2002||25 Jul 2006||Applied Materials, Inc.||Cyclical deposition of refractory metal silicon nitride|
|US7105054||16 Abr 2001||12 Sep 2006||Asm International N.V.||Method and apparatus of growing a thin film onto a substrate|
|US7175713||27 Ene 2003||13 Feb 2007||Applied Materials, Inc.||Apparatus for cyclical deposition of thin films|
|US7228873||11 May 2006||12 Jun 2007||Applied Materials, Inc.||Valve design and configuration for fast delivery system|
|US7235492||31 Ene 2005||26 Jun 2007||Applied Materials, Inc.||Low temperature etchant for treatment of silicon-containing surfaces|
|US7238552||17 May 2005||3 Jul 2007||Applied Materials, Inc.||Method and apparatus for depositing tungsten after surface treatment to improve film characteristics|
|US7241686||19 Feb 2005||10 Jul 2007||Applied Materials, Inc.||Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA|
|US7244683||19 Dic 2003||17 Jul 2007||Applied Materials, Inc.||Integration of ALD/CVD barriers with porous low k materials|
|US7279432||15 Abr 2003||9 Oct 2007||Applied Materials, Inc.||System and method for forming an integrated barrier layer|
|US7304004||6 Ago 2004||4 Dic 2007||Applied Materials, Inc.||System and method for forming a gate dielectric|
|US7312128||1 Dic 2004||25 Dic 2007||Applied Materials, Inc.||Selective epitaxy process with alternating gas supply|
|US7384867||18 Ago 2005||10 Jun 2008||Applied Materials, Inc.||Formation of composite tungsten films|
|US7396565||6 Ago 2004||8 Jul 2008||Applied Materials, Inc.||Multiple precursor cyclical deposition system|
|US7422637||25 Oct 2006||9 Sep 2008||Applied Materials, Inc.||Processing chamber configured for uniform gas flow|
|US7464917||7 Oct 2005||16 Dic 2008||Appiled Materials, Inc.||Ampoule splash guard apparatus|
|US7517775||30 May 2006||14 Abr 2009||Applied Materials, Inc.||Methods of selective deposition of heavily doped epitaxial SiGe|
|US7521365||31 May 2006||21 Abr 2009||Applied Materials, Inc.||Selective epitaxy process with alternating gas supply|
|US7521379||9 Oct 2007||21 Abr 2009||Applied Materials, Inc.||Deposition and densification process for titanium nitride barrier layers|
|US7531468||30 Oct 2007||12 May 2009||Applied Materials, Inc.||System and method for forming a gate dielectric|
|US7540920||17 Oct 2003||2 Jun 2009||Applied Materials, Inc.||Silicon-containing layer deposition with silicon compounds|
|US7560352||17 Mar 2006||14 Jul 2009||Applied Materials, Inc.||Selective deposition|
|US7572715||7 May 2007||11 Ago 2009||Applied Materials, Inc.||Selective epitaxy process with alternating gas supply|
|US7585762||25 Sep 2007||8 Sep 2009||Applied Materials, Inc.||Vapor deposition processes for tantalum carbide nitride materials|
|US7588980||30 Jul 2007||15 Sep 2009||Applied Materials, Inc.||Methods of controlling morphology during epitaxial layer formation|
|US7645339||12 Oct 2006||12 Ene 2010||Applied Materials, Inc.||Silicon-containing layer deposition with silicon compounds|
|US7648927||20 Jun 2006||19 Ene 2010||Applied Materials, Inc.||Method for forming silicon-containing materials during a photoexcitation deposition process|
|US7651955||20 Jun 2006||26 Ene 2010||Applied Materials, Inc.||Method for forming silicon-containing materials during a photoexcitation deposition process|
|US7659158||31 Mar 2008||9 Feb 2010||Applied Materials, Inc.||Atomic layer deposition processes for non-volatile memory devices|
|US7670945||29 Dic 2008||2 Mar 2010||Applied Materials, Inc.||In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application|
|US7674337||6 Abr 2007||9 Mar 2010||Applied Materials, Inc.||Gas manifolds for use during epitaxial film formation|
|US7674715||16 Dic 2008||9 Mar 2010||Applied Materials, Inc.||Method for forming tungsten materials during vapor deposition processes|
|US7678194||28 Nov 2006||16 Mar 2010||Applied Materials, Inc.||Method for providing gas to a processing chamber|
|US7678298||25 Sep 2007||16 Mar 2010||Applied Materials, Inc.||Tantalum carbide nitride materials by vapor deposition processes|
|US7682940||14 Sep 2005||23 Mar 2010||Applied Materials, Inc.||Use of Cl2 and/or HCl during silicon epitaxial film formation|
|US7682946||6 Nov 2006||23 Mar 2010||Applied Materials, Inc.||Apparatus and process for plasma-enhanced atomic layer deposition|
|US7682984||13 Sep 2006||23 Mar 2010||Applied Materials, Inc.||Interferometer endpoint monitoring device|
|US7691742||4 Feb 2009||6 Abr 2010||Applied Materials, Inc.||Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA|
|US7695563||8 Ene 2007||13 Abr 2010||Applied Materials, Inc.||Pulsed deposition process for tungsten nucleation|
|US7699295||9 Dic 2008||20 Abr 2010||Applied Materials, Inc.||Ampoule splash guard apparatus|
|US7709385||16 Dic 2008||4 May 2010||Applied Materials, Inc.||Method for depositing tungsten-containing layers by vapor deposition techniques|
|US7732305||28 Jul 2006||8 Jun 2010||Applied Materials, Inc.||Use of Cl2 and/or HCl during silicon epitaxial film formation|
|US7732325||5 Ene 2009||8 Jun 2010||Applied Materials, Inc.||Plasma-enhanced cyclic layer deposition process for barrier layers|
|US7732327||26 Sep 2008||8 Jun 2010||Applied Materials, Inc.||Vapor deposition of tungsten materials|
|US7737007||29 Ago 2008||15 Jun 2010||Applied Materials, Inc.||Methods to fabricate MOSFET devices using a selective deposition process|
|US7745329||20 Ago 2008||29 Jun 2010||Applied Materials, Inc.||Tungsten nitride atomic layer deposition processes|
|US7745333||24 Jul 2008||29 Jun 2010||Applied Materials, Inc.||Methods for depositing tungsten layers employing atomic layer deposition techniques|
|US7758697||3 Ene 2008||20 Jul 2010||Applied Materials, Inc.||Silicon-containing layer deposition with silicon compounds|
|US7775508||31 Oct 2006||17 Ago 2010||Applied Materials, Inc.||Ampoule for liquid draw and vapor draw with a continuous level sensor|
|US7779784||6 Jun 2005||24 Ago 2010||Applied Materials, Inc.||Apparatus and method for plasma assisted deposition|
|US7780785||25 Oct 2002||24 Ago 2010||Applied Materials, Inc.||Gas delivery apparatus for atomic layer deposition|
|US7780788||11 Mar 2005||24 Ago 2010||Applied Materials, Inc.||Gas delivery apparatus for atomic layer deposition|
|US7781326||30 Sep 2005||24 Ago 2010||Applied Materials, Inc.||Formation of a tantalum-nitride layer|
|US7794544||26 Oct 2007||14 Sep 2010||Applied Materials, Inc.||Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system|
|US7798096||5 May 2006||21 Sep 2010||Applied Materials, Inc.||Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool|
|US7799300||12 Jun 2008||21 Sep 2010||Asm International N.V.||Method and apparatus for removing substances from gases|
|US7824743||28 Sep 2007||2 Nov 2010||Applied Materials, Inc.||Deposition processes for titanium nitride barrier and aluminum|
|US7838441||20 Abr 2009||23 Nov 2010||Applied Materials, Inc.||Deposition and densification process for titanium nitride barrier layers|
|US7846840||22 Dic 2009||7 Dic 2010||Applied Materials, Inc.||Method for forming tungsten materials during vapor deposition processes|
|US7850779||6 Nov 2006||14 Dic 2010||Applied Materisals, Inc.||Apparatus and process for plasma-enhanced atomic layer deposition|
|US7867896||2 Abr 2009||11 Ene 2011||Applied Materials, Inc.||Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor|
|US7867914||29 Jun 2007||11 Ene 2011||Applied Materials, Inc.||System and method for forming an integrated barrier layer|
|US7871470||26 Jun 2006||18 Ene 2011||Applied Materials, Inc.||Substrate support lift mechanism|
|US7892602||7 Jun 2006||22 Feb 2011||Applied Materials, Inc.||Cyclical deposition of refractory metal silicon nitride|
|US7905959||19 Nov 2004||15 Mar 2011||Applied Materials, Inc.||Lid assembly for a processing system to facilitate sequential deposition techniques|
|US7960256||12 May 2010||14 Jun 2011||Applied Materials, Inc.||Use of CL2 and/or HCL during silicon epitaxial film formation|
|US8029620||31 Jul 2007||4 Oct 2011||Applied Materials, Inc.||Methods of forming carbon-containing silicon epitaxial layers|
|US8071167||4 Jun 2010||6 Dic 2011||Applied Materials, Inc.||Surface pre-treatment for enhancement of nucleation of high dielectric constant materials|
|US8092695||29 Oct 2007||10 Ene 2012||Applied Materials, Inc.||Endpoint detection for photomask etching|
|US8093154||3 Oct 2005||10 Ene 2012||Applied Materials, Inc.||Etchant treatment processes for substrate surfaces and chamber surfaces|
|US8123860||30 Oct 2008||28 Feb 2012||Applied Materials, Inc.||Apparatus for cyclical depositing of thin films|
|US8158526||29 Oct 2007||17 Abr 2012||Applied Materials, Inc.||Endpoint detection for photomask etching|
|US8293328||7 Sep 2006||23 Oct 2012||Applied Materials, Inc.||Enhanced copper growth with ultrathin barrier layer for high performance interconnects|
|US8318266||7 Sep 2006||27 Nov 2012||Applied Materials, Inc.||Enhanced copper growth with ultrathin barrier layer for high performance interconnects|
|US8387557||13 Oct 2009||5 Mar 2013||Applied Materials||Method for forming silicon-containing materials during a photoexcitation deposition process|
|US8445389||9 Ene 2012||21 May 2013||Applied Materials, Inc.||Etchant treatment processes for substrate surfaces and chamber surfaces|
|US8492284||28 Nov 2011||23 Jul 2013||Applied Materials, Inc.||Low temperature etchant for treatment of silicon-containing surfaces|
|US8586456||31 May 2011||19 Nov 2013||Applied Materials, Inc.||Use of CL2 and/or HCL during silicon epitaxial film formation|
|US8778204||26 Oct 2011||15 Jul 2014||Applied Materials, Inc.||Methods for reducing photoresist interference when monitoring a target layer in a plasma process|
|US8778574||25 Ene 2013||15 Jul 2014||Applied Materials, Inc.||Method for etching EUV material layers utilized to form a photomask|
|US8808559||8 Jul 2012||19 Ago 2014||Applied Materials, Inc.||Etch rate detection for reflective multi-material layers etching|
|US8900469||6 Jul 2012||2 Dic 2014||Applied Materials, Inc.||Etch rate detection for anti-reflective coating layer and absorber layer etching|
|US8961804||12 Oct 2012||24 Feb 2015||Applied Materials, Inc.||Etch rate detection for photomask etching|
|US9051641||29 Ago 2008||9 Jun 2015||Applied Materials, Inc.||Cobalt deposition on barrier surfaces|
|US20040067641 *||29 Ene 2003||8 Abr 2004||Applied Materials, Inc.||Gas distribution system for cyclical layer deposition|
|US20040069227 *||9 Oct 2002||15 Abr 2004||Applied Materials, Inc.||Processing chamber configured for uniform gas flow|
|US20040071897 *||11 Oct 2002||15 Abr 2004||Applied Materials, Inc.||Activated species generator for rapid cycle deposition processes|
|US20040077183 *||21 May 2003||22 Abr 2004||Hua Chung||Titanium tantalum nitride silicide layer|
|US20040134427 *||9 Ene 2003||15 Jul 2004||Derderian Garo J.||Deposition chamber surface enhancement and resulting deposition chambers|
|US20040144308 *||29 Ene 2003||29 Jul 2004||Applied Materials, Inc.||Membrane gas valve for pulsing a gas|
|US20040144311 *||13 Nov 2003||29 Jul 2004||Ling Chen||Apparatus and method for hybrid chemical processing|
|US20040144431 *||29 Ene 2003||29 Jul 2004||Joseph Yudovsky||Rotary gas valve for pulsing a gas|
|US20040170403 *||3 Mar 2004||2 Sep 2004||Applied Materials, Inc.||Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition|
|US20040197492 *||22 Jul 2003||7 Oct 2004||Applied Materials, Inc.||CVD TiSiN barrier for copper integration|
|US20040198069 *||4 Abr 2003||7 Oct 2004||Applied Materials, Inc.||Method for hafnium nitride deposition|
|US20040209465 *||22 Ene 2004||21 Oct 2004||Applied Materials, Inc.||Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer|
|US20040211665 *||14 May 2004||28 Oct 2004||Yoon Ki Hwan||Barrier formation using novel sputter-deposition method|
|US20040224089 *||17 Oct 2003||11 Nov 2004||Applied Materials, Inc.||Silicon-containing layer deposition with silicon compounds|
|US20040247788 *||29 Jun 2004||9 Dic 2004||Hongbin Fang||Method for depositing refractory metal layers employing sequential deposition techniques|
|US20040256351 *||19 Dic 2003||23 Dic 2004||Hua Chung||Integration of ALD/CVD barriers with porous low k materials|
|US20050008779 *||6 Ago 2004||13 Ene 2005||Yang Michael Xi||Multiple precursor cyclical depositon system|
|US20050009325 *||18 Jun 2004||13 Ene 2005||Hua Chung||Atomic layer deposition of barrier materials|
|US20050009371 *||6 Ago 2004||13 Ene 2005||Metzner Craig R.||System and method for forming a gate dielectric|
|US20050059241 *||29 Sep 2004||17 Mar 2005||Moris Kori||Method and system for controlling the presence of fluorine in refractory metal layers|
|US20050067103 *||26 Sep 2003||31 Mar 2005||Applied Materials, Inc.||Interferometer endpoint monitoring device|
|US20050095859 *||3 Nov 2003||5 May 2005||Applied Materials, Inc.||Precursor delivery system with rate control|
|US20050139160 *||16 Feb 2005||30 Jun 2005||Applied Materials, Inc.||Clamshell and small volume chamber with fixed substrate support|
|US20050150459 *||13 Dic 2004||14 Jul 2005||Quanyuan Shang||Full glass substrate deposition in plasma enhanced chemical vapor deposition|
|US20050164487 *||23 Mar 2005||28 Jul 2005||Applied Materials, Inc.||Formation of a tantalum-nitride layer|
|US20050189072 *||2 May 2005||1 Sep 2005||Applied Materials, Inc.||Method and apparatus of generating PDMAT precursor|
|US20050257735 *||6 Jun 2005||24 Nov 2005||Guenther Rolf A||Method and apparatus for providing gas to a processing chamber|
|US20050287807 *||18 Ago 2005||29 Dic 2005||Applied Materials, Inc.||Formation of composite tungsten films|
|US20060019032 *||23 Jul 2004||26 Ene 2006||Yaxin Wang||Low thermal budget silicon nitride formation for advance transistor fabrication|
|US20060019495 *||19 Feb 2005||26 Ene 2006||Applied Materials, Inc.||Atomic layer deposition of tantalum-containing materials using the tantalum precursor taimata|
|US20060035025 *||6 Jun 2005||16 Feb 2006||Applied Materials, Inc.||Activated species generator for rapid cycle deposition processes|
|US20130133696 *||25 Ene 2013||30 May 2013||Hitachi Kokusai Electric Inc.||Substrate processing apparatus|
|EP1323845A1 *||26 Dic 2002||2 Jul 2003||Memscap||Multilayer structure|
|WO2003050323A1 *||3 Dic 2002||19 Jun 2003||Applied Materials Inc||Cyclical deposition of refractory metal silicon nitride|
|Clasificación de EE.UU.||118/723.00R, 257/E21.17, 257/E21.274, 257/E21.272|
|Clasificación internacional||H01L21/205, C23C16/455, H01L21/285, H01L21/314, C23C16/44, C23C16/452, H01L21/316|
|Clasificación cooperativa||C23C16/45536, H01L21/318, H01L21/31691, H01L21/31616, C23C16/45544, H01L21/02178, C23C16/4401, H01L21/0228, H01L21/31604, C23C16/44, H01L21/31637, H01L21/31641, C23C16/452, H01L21/02274, H01L21/31645, H01L21/28556|
|Clasificación europea||H01L21/318, H01L21/316B3, H01L21/316B12, H01L21/316B14, H01L21/316B10, H01L21/02K2E3B6F, H01L21/02K2C1M3A, H01L21/02K2E3B6B, C23C16/44A, C23C16/452, C23C16/44, H01L21/285B4H, H01L21/316B, H01L21/316D, C23C16/455F2D, C23C16/455F2B8|
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