US20010008224A1 - Method of manufacturing electronic components - Google Patents
Method of manufacturing electronic components Download PDFInfo
- Publication number
- US20010008224A1 US20010008224A1 US09/124,776 US12477698A US2001008224A1 US 20010008224 A1 US20010008224 A1 US 20010008224A1 US 12477698 A US12477698 A US 12477698A US 2001008224 A1 US2001008224 A1 US 2001008224A1
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- United States
- Prior art keywords
- metal layer
- layer
- mixture
- tetraacetic acid
- providing
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 62
- 239000002184 metal Substances 0.000 claims abstract description 62
- 239000000203 mixture Substances 0.000 claims abstract description 58
- 238000005530 etching Methods 0.000 claims abstract description 19
- 239000000654 additive Substances 0.000 claims abstract description 8
- 230000000996 additive effect Effects 0.000 claims abstract description 8
- 229910000679 solder Inorganic materials 0.000 claims abstract description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
- 239000010936 titanium Substances 0.000 claims abstract description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 5
- 239000010937 tungsten Substances 0.000 claims abstract description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 34
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 20
- 229960001484 edetic acid Drugs 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 13
- -1 1,2-cyclohexylenedinitrilo tetraacetic acid monohydrate Chemical class 0.000 claims description 7
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 6
- KSYNLCYTMRMCGG-UHFFFAOYSA-J tetrasodium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate;dihydrate Chemical compound O.O.[Na+].[Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O KSYNLCYTMRMCGG-UHFFFAOYSA-J 0.000 claims 4
- 230000004888 barrier function Effects 0.000 description 6
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 5
- 239000000243 solution Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 238000003421 catalytic decomposition reaction Methods 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000001455 metallic ions Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000004682 monohydrates Chemical class 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- UEUXEKPTXMALOB-UHFFFAOYSA-J tetrasodium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O UEUXEKPTXMALOB-UHFFFAOYSA-J 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
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Definitions
- This invention relates, in general, to electronics, and more particularly, to methods of manufacturing electronic components.
- Metal layers of titanium and tungsten are commonly used as barrier layers in electronic components.
- semiconductor components use these barrier layers to prevent metallic ions from diffusing into and contaminating the underlying semiconductor substrate.
- Hydrogen peroxide has been used to etch these barrier layers for over twenty-eight years. Many improvements have been made to the hydrogen peroxide etch process. However, the etch process is still difficult to control in certain situations.
- FIG. 1 illustrates a cross-sectional view of an embodiment of a portion of an electronic component in accordance with the present invention.
- FIGS. 2 - 7 illustrate cross-sectional views of the embodiment of the portion of the electronic component after subsequent manufacturing steps in accordance with the present invention.
- FIG. 1 illustrates a cross-sectional view of a portion of an electronic component 100 .
- Component 100 includes a substrate 101 .
- Substrate 101 can support a semiconductor device, which is indicated generally by element 102 in FIG. 1.
- the semiconductor device can be formed in substrate 101 using manufacturing techniques known in the art.
- the semiconductor device can be a diode, transistor, integrated circuit, or the like.
- Substrate 101 can be comprised of a semiconductor substrate and can also include overlying electrically conductive layers and electrically insulative layers for proper electrical wiring and isolation of different portions of the semiconductor device.
- Substrate 101 can also represent a semiconductor wafer containing a plurality of semiconductor devices.
- An example of some of the electrically conductive layers and electrically insulative layers of substrate 101 can include layers 103 and 104 , respectively.
- Layer 103 can be an bonding pad that overlies and is electrically coupled to the semiconductor device in substrate 101 .
- Layer 104 can be a passivation layer that overlies and protects substrate 101 , the semiconductor device, and layer 103 .
- Layer 103 can be comprised of aluminum (Al), copper (Cu), or the like, and layer 104 can be comprised of silicon dioxide, silicon nitride, or the like.
- Layer 104 has a hole 105 overlying and exposing a central portion of layer 103 . Hole 105 can be formed in layer 104 by masking and etching processes known in the art.
- FIG. 2 illustrates a cross-sectional view of component 100 after a composite metal layer is provided over layers 103 and 104 .
- a metal layer 201 is disposed or deposited in hole 105 to contact the exposed portion of layer 103 .
- a metal layer 202 is disposed or deposited over layer 201
- a metal layer 203 is disposed or deposited over layer 202 .
- Layers 201 and 202 are preferably barrier layers for reasons explained hereinafter, and layer 203 is preferably a seed layer for a subsequent plating step.
- All of layers 201 , 202 , and 203 can be sequentially sputtered in-situ to thicknesses of approximately seventy nanometers (nm), approximately two hundred nm, and approximately five hundred nm, respectively.
- layer 203 can be comprised of a solderable metal, which is preferably comprised of Cu.
- layer 201 is preferably comprised of titanium tungsten nitride (TiWNx), and layer 202 is preferably comprised of titanium tungsten (TiW).
- layer 203 is comprised of Cu
- two barrier layers are used because the TiWNx of layer 201 provides better stress relief and better diffusion barrier properties than the TiW of layer 202 and because the Cu of layer 203 adheres better to the TiW of layer 202 than to the TiWNx of layer 201 .
- the TiWNx of layer 201 and the TiW of layer 202 adhere well to each other.
- FIGS. 3 and 4 illustrate cross-sectional views of component 100 after subsequent manufacturing steps.
- a mask 301 is formed over layers 201 , 202 , and 203 .
- mask 301 is comprised of photoresist.
- an opening 401 is formed in mask 301 to expose a central portion of layer 203 . Opening 401 can be easily formed by developing the photoresist.
- FIG. 5 illustrates a cross-sectional view of component 100 after subsequent manufacturing steps.
- a metal layer 501 is disposed or deposited in hole 401 of mask 301 to contact layer 203 , and a metal layer 502 is disposed or deposited over layer 501 .
- Layer 501 can be plated over layer 203 using electroplating techniques known in the art.
- layer 502 can be plated over layer 501 using techniques known in the art.
- Layer 501 is preferably plated to a thickness less than the thickness of mask 301 .
- layer 501 can be plated to a thickness of approximately nine to fifty micrometers, and layer 502 can be plated to a thickness of approximately twenty-five to seventy-five micrometers above mask 301 .
- Layer 501 is preferably comprised of a material different from layers 201 and 202 , but similar to layer 203 .
- Layer 502 is preferably comprised of a tin (Sn) and lead (Pb) solder.
- Mask 301 prevents layers 501 and 502 from being plated over substantial portions of layer 203 that are covered by mask 301 . Therefore, layers 501 and 502 are absent over portions of layers 201 , 202 , and 203 that underlie mask 301 .
- the plating of layers 501 and 502 enables the formation of smaller geometry or fine pitch contact bumps compared to the screen printing techniques of the prior art.
- FIG. 6 illustrates a cross-sectional view of component 100 after subsequent manufacturing steps.
- mask 301 of FIGS. 3, 4, and 5 is removed using techniques known in the art.
- the exposed portion of layer 203 is removed using etching techniques known in the art.
- the portions of layers 201 and 202 located underneath the removed portion of layer 203 are removed using an etchant mixture 601 .
- Layers 203 , 501 , and 502 are also simultaneously exposed to mixture 601 during the etching of layers 201 and 202 .
- mixture 601 preferably selectively etches layers 201 and 202 over layers 203 , 501 , and 502 . This etching step can be accomplished in a bath, a spray, or the like of mixture 601 .
- an etchant consisting solely of thirty percent by weight hydrogen peroxide (H 2 O 2 ) would be used to perform this etching step.
- layer 502 is comprised of Pb and when layer 501 is comprised of Cu, several problems occur when using this prior art etchant.
- the temperature of the prior art etchant rapidly increases due to the catalytic decomposition of the H 2 O 2 when exposed to the Pb and Cu of layers 501 and 502 , respectively. This rise in temperature uncontrollably increases the etch rate of layers 201 and 202 .
- portions of layers 201 and 202 are covered by the redeposition of Pb from layer 502 . This redeposition masks the underlying portions of layers 201 and 202 and prevents the etching of those portions.
- Etchant mixture 601 is different from the etchant of the prior art.
- Mixture 601 includes a wet etchant of H 2 O 2 to selectively etch layers 201 and 202 over layers 203 , 501 , and 502 .
- layer 502 is comprised of Pb
- mixture 601 can include an additive to suppress the redeposition of the Pb onto layer 202 .
- this additive can be comprised of Ethylene Dinitrilo Tetraacetic Acid (EDTA).
- Plain EDTA can be used in mixture 601 , but EDTA tetrasodium salt dihydrate (EDTA—Na 4 —2H 2 O) is preferred because EDTA—Na 4 —2H 2 O is more soluble in H 2 O 2 than EDTA.
- EDTA disodium salt dihydrate (EDTA—Na 2 —2H 2 O) is another form of EDTA that can also be used in mixture 601 , but when layer 501 is comprised of Cu, EDTA—Na 2 —2H 2 O is not preferred because of the resulting higher Cu etch rate compared to when plain EDTA or EDTA—Na 4 —2H 2 O is used.
- layer 502 preferably has a low content of Pb that is less than approximately fifty-percent by weight of layer 502 .
- Mixture 601 can also include another additive to stabilize the temperature of mixture 601 and to reduce the decomposition of H 2 O 2 during the etching of layers 201 and 202 .
- this other additive can be comprised of 1,2-Diamino Cyclohexane Tetraacetic Acid (DCTA), which is also known as 1,2-cyclohexylenedinitrilo tetraacetic acid.
- DCTA 1,2-Diamino Cyclohexane Tetraacetic Acid
- DCTA DCTA monohydrate
- DCTA—H 2 O can be used in mixture 601 .
- pH represents the acidity or basicity of a solution or mixture.
- a pH value of 1 indicates an extremely acidic solution, and a pH value of 14 indicates an extremely basic solution.
- a thirty percent by weight solution of H 2 O 2 has a pH value of approximately 4.
- mixture 601 also preferably has a pH value of approximately 4.
- the pH value of mixture 601 may increase.
- DCTA is added to mixture 601
- the pH value of mixture 601 decreases. Therefore, the amounts of EDTA and DCTA that are added to mixture 601 preferably return the pH value of mixture 601 to approximately 4.
- mixture 601 has a ratio of approximately twenty and four-tenths grams of DCTA to approximately six and eight-tenths grams of EDTA to approximately thirty-four liters of thirty-percent by weight H 2 O 2 .
- Mixture 601 is preferably a homogenous solution, but mixture 601 does not need to be continuously agitated or stirred during the etching process. In fact, mixture 601 preferably is not continuously agitated during the etching process in order to extend the usable life of mixture 601 .
- mixture 601 can be heated to a temperature above room temperature.
- mixture 601 can be heated to approximately sixty to ninety degrees Celsius.
- the higher temperature produces a higher etch rate for layers 201 and 202 .
- the etch rate is twice as high at seventy degrees Celsius compared to sixty degrees Celsius.
- mixture 601 evaporates at higher temperatures, which disrupts the preferred ratios of the components of mixture 601 and the pH value of mixture 601 .
- Low temperatures of mixture 601 lower the etch rate and require longer etch times, which reduce reduces the throughput of the etch process.
- mixture 601 also increases the exposure of layer 502 to mixture 601 , and the increased exposure oxidizes layer 502 when layer 502 is comprised of Sn and Pb. In some cases, this oxidation of layer 502 can be eliminated during a subsequent solder fluxing step, but the oxidation of layer 502 is preferably kept to a minimum. Optimizing these factors, mixture 601 is preferably used at a temperature of approximately seventy degrees Celsius to produce a TiWNx/TiW etch rate of approximately twenty-three nanometers per minute, which is significantly and substantially higher than the etch rate for layers 203 , 501 , and 502 .
- FIG. 7 illustrates a cross-sectional view of component 100 after reflowing layer 502 .
- This reflowing step reshapes layer 502 into a sphere-like object having a diameter of approximately eighty to two hundred micrometers.
- This curved shape of layer 502 facilitates the coupling of the substrate or device to a leadframe, grid array, or the like.
- Layer 502 is preferably comprised of a low temperature solder such as, for example, sixty percent Sn and forty percent Pb. The low temperature solder facilitates the assembly of the substrate or device onto a leadframe.
- an improved method of manufacturing an electronic component is provided to overcome the disadvantages of the prior art.
- the method enables the formation of small geometry contact bumps, which cannot be manufactured by prior art screen printing techniques.
- the etching method disclosed herein reduces the decomposition of H 2 O 2 , controls or maintains the temperature of the etchant mixture, and suppresses, minimizes, or reduces both the redeposition of Pb and the undercut of the entire metallization stack.
- concentrations of H 2 O 2 that are different from thirty percent by weight can be used in mixture 601 . Accordingly, the disclosure of the present invention is not intended to be limiting. Instead, the disclosure of the present invention is intended to be illustrative of the scope of the invention, which is set forth in the following claims.
Abstract
Description
- This invention relates, in general, to electronics, and more particularly, to methods of manufacturing electronic components.
- Metal layers of titanium and tungsten are commonly used as barrier layers in electronic components. In particular, semiconductor components use these barrier layers to prevent metallic ions from diffusing into and contaminating the underlying semiconductor substrate. Hydrogen peroxide has been used to etch these barrier layers for over twenty-eight years. Many improvements have been made to the hydrogen peroxide etch process. However, the etch process is still difficult to control in certain situations.
- Accordingly, a need exists for an improved method of etching metal layers to manufacture electronic components.
- FIG. 1 illustrates a cross-sectional view of an embodiment of a portion of an electronic component in accordance with the present invention; and
- FIGS.2-7 illustrate cross-sectional views of the embodiment of the portion of the electronic component after subsequent manufacturing steps in accordance with the present invention.
- For simplicity and clarity of illustration, elements in the drawings are not necessarily drawn to scale, and the same reference numerals in different figures denote the same elements.
- FIG. 1 illustrates a cross-sectional view of a portion of an
electronic component 100.Component 100 includes asubstrate 101.Substrate 101 can support a semiconductor device, which is indicated generally byelement 102 in FIG. 1. The semiconductor device can be formed insubstrate 101 using manufacturing techniques known in the art. For instance, the semiconductor device can be a diode, transistor, integrated circuit, or the like.Substrate 101 can be comprised of a semiconductor substrate and can also include overlying electrically conductive layers and electrically insulative layers for proper electrical wiring and isolation of different portions of the semiconductor device.Substrate 101 can also represent a semiconductor wafer containing a plurality of semiconductor devices. - An example of some of the electrically conductive layers and electrically insulative layers of
substrate 101 can includelayers Layer 103 can be an bonding pad that overlies and is electrically coupled to the semiconductor device insubstrate 101.Layer 104 can be a passivation layer that overlies and protectssubstrate 101, the semiconductor device, andlayer 103.Layer 103 can be comprised of aluminum (Al), copper (Cu), or the like, andlayer 104 can be comprised of silicon dioxide, silicon nitride, or the like.Layer 104 has ahole 105 overlying and exposing a central portion oflayer 103.Hole 105 can be formed inlayer 104 by masking and etching processes known in the art. - FIG. 2 illustrates a cross-sectional view of
component 100 after a composite metal layer is provided overlayers metal layer 201 is disposed or deposited inhole 105 to contact the exposed portion oflayer 103. Then, ametal layer 202 is disposed or deposited overlayer 201, and ametal layer 203 is disposed or deposited overlayer 202.Layers layer 203 is preferably a seed layer for a subsequent plating step. All oflayers layer 203 can be comprised of a solderable metal, which is preferably comprised of Cu. Additionally,layer 201 is preferably comprised of titanium tungsten nitride (TiWNx), andlayer 202 is preferably comprised of titanium tungsten (TiW). In the preferred embodiment wherelayer 203 is comprised of Cu, two barrier layers are used because the TiWNx oflayer 201 provides better stress relief and better diffusion barrier properties than the TiW oflayer 202 and because the Cu oflayer 203 adheres better to the TiW oflayer 202 than to the TiWNx oflayer 201. The TiWNx oflayer 201 and the TiW oflayer 202 adhere well to each other. - FIGS. 3 and 4 illustrate cross-sectional views of
component 100 after subsequent manufacturing steps. In FIG. 3, amask 301 is formed overlayers mask 301 is comprised of photoresist. In FIG. 4, anopening 401 is formed inmask 301 to expose a central portion oflayer 203.Opening 401 can be easily formed by developing the photoresist. - FIG. 5 illustrates a cross-sectional view of
component 100 after subsequent manufacturing steps. Ametal layer 501 is disposed or deposited inhole 401 ofmask 301 tocontact layer 203, and ametal layer 502 is disposed or deposited overlayer 501.Layer 501 can be plated overlayer 203 using electroplating techniques known in the art. Similarly,layer 502 can be plated overlayer 501 using techniques known in the art.Layer 501 is preferably plated to a thickness less than the thickness ofmask 301. As an example,layer 501 can be plated to a thickness of approximately nine to fifty micrometers, andlayer 502 can be plated to a thickness of approximately twenty-five to seventy-five micrometers abovemask 301.Layer 501 is preferably comprised of a material different fromlayers layer 203.Layer 502 is preferably comprised of a tin (Sn) and lead (Pb) solder. -
Mask 301 preventslayers layer 203 that are covered bymask 301. Therefore,layers layers mask 301. The plating oflayers - FIG. 6 illustrates a cross-sectional view of
component 100 after subsequent manufacturing steps. First,mask 301 of FIGS. 3, 4, and 5 is removed using techniques known in the art. Then, the exposed portion oflayer 203 is removed using etching techniques known in the art. - Next, the portions of
layers layer 203 are removed using anetchant mixture 601.Layers mixture 601 during the etching oflayers mixture 601 preferably selectively etcheslayers layers mixture 601. - In the prior art, an etchant consisting solely of thirty percent by weight hydrogen peroxide (H2O2) would be used to perform this etching step. However, when
layer 502 is comprised of Pb and whenlayer 501 is comprised of Cu, several problems occur when using this prior art etchant. First, the temperature of the prior art etchant rapidly increases due to the catalytic decomposition of the H2O2 when exposed to the Pb and Cu oflayers layers layers layer 502. This redeposition masks the underlying portions oflayers -
Etchant mixture 601 is different from the etchant of the prior art.Mixture 601 includes a wet etchant of H2O2 to selectively etchlayers layers layer 502 is comprised of Pb,mixture 601 can include an additive to suppress the redeposition of the Pb ontolayer 202. As an example, this additive can be comprised of Ethylene Dinitrilo Tetraacetic Acid (EDTA). Plain EDTA can be used inmixture 601, but EDTA tetrasodium salt dihydrate (EDTA—Na4—2H2O) is preferred because EDTA—Na4—2H2O is more soluble in H2O2 than EDTA. EDTA disodium salt dihydrate (EDTA—Na2—2H2O) is another form of EDTA that can also be used inmixture 601, but whenlayer 501 is comprised of Cu, EDTA—Na2—2H2O is not preferred because of the resulting higher Cu etch rate compared to when plain EDTA or EDTA—Na4—2H2O is used. This higher Cu etch rate produces a large undercut oflayers layer 502 preferably has a low content of Pb that is less than approximately fifty-percent by weight oflayer 502. -
Mixture 601 can also include another additive to stabilize the temperature ofmixture 601 and to reduce the decomposition of H2O2 during the etching oflayers mixture 601. - As used in the art, the term “pH” represents the acidity or basicity of a solution or mixture. A pH value of 1 indicates an extremely acidic solution, and a pH value of 14 indicates an extremely basic solution. A thirty percent by weight solution of H2O2 has a pH value of approximately 4. For the most efficient and most stable etching of
layers mixture 601 also preferably has a pH value of approximately 4. However, when EDTA is added tomixture 601, the pH value ofmixture 601 may increase. Furthermore, when DCTA is added tomixture 601, the pH value ofmixture 601 decreases. Therefore, the amounts of EDTA and DCTA that are added tomixture 601 preferably return the pH value ofmixture 601 to approximately 4. - To balance all of the criteria described hereinabove, approximately one to thirty grams of DCTA and approximately one to fifty grams of EDTA can be added to approximately thirty-four liters of thirty percent by weight H2O2. In the preferred embodiment optimizing all of the criteria,
mixture 601 has a ratio of approximately twenty and four-tenths grams of DCTA to approximately six and eight-tenths grams of EDTA to approximately thirty-four liters of thirty-percent by weight H2O2. Mixture 601 is preferably a homogenous solution, butmixture 601 does not need to be continuously agitated or stirred during the etching process. In fact,mixture 601 preferably is not continuously agitated during the etching process in order to extend the usable life ofmixture 601. - To increase the etch rate of
mixture 601,mixture 601 can be heated to a temperature above room temperature. In particular,mixture 601 can be heated to approximately sixty to ninety degrees Celsius. The higher temperature produces a higher etch rate forlayers mixture 601 evaporates at higher temperatures, which disrupts the preferred ratios of the components ofmixture 601 and the pH value ofmixture 601. Low temperatures ofmixture 601 lower the etch rate and require longer etch times, which reduce reduces the throughput of the etch process. The low temperatures ofmixture 601 also increases the exposure oflayer 502 tomixture 601, and the increased exposure oxidizeslayer 502 whenlayer 502 is comprised of Sn and Pb. In some cases, this oxidation oflayer 502 can be eliminated during a subsequent solder fluxing step, but the oxidation oflayer 502 is preferably kept to a minimum. Optimizing these factors,mixture 601 is preferably used at a temperature of approximately seventy degrees Celsius to produce a TiWNx/TiW etch rate of approximately twenty-three nanometers per minute, which is significantly and substantially higher than the etch rate forlayers - FIG. 7 illustrates a cross-sectional view of
component 100 after reflowinglayer 502. This reflowing step reshapeslayer 502 into a sphere-like object having a diameter of approximately eighty to two hundred micrometers. This curved shape oflayer 502 facilitates the coupling of the substrate or device to a leadframe, grid array, or the like.Layer 502 is preferably comprised of a low temperature solder such as, for example, sixty percent Sn and forty percent Pb. The low temperature solder facilitates the assembly of the substrate or device onto a leadframe. - Therefore, an improved method of manufacturing an electronic component is provided to overcome the disadvantages of the prior art. The method enables the formation of small geometry contact bumps, which cannot be manufactured by prior art screen printing techniques. The etching method disclosed herein reduces the decomposition of H2O2, controls or maintains the temperature of the etchant mixture, and suppresses, minimizes, or reduces both the redeposition of Pb and the undercut of the entire metallization stack.
- While the invention has been particularly shown and described mainly with reference to preferred embodiments, it will be understood by those skilled in the art that changes in form and detail may be made without departing from the spirit and scope of the invention. For instance, the numerous details set forth herein such as, for example, the specific chemical compositions and the specific chemical ratios are provided to facilitate the understanding of the present invention and are not provided to limit the scope of the invention. As another example, the EDTA and the DCTA of
mixture 601 can be replaced by other complexing or chelating agents that have similar characteristics to those of EDTA and DCTA. Furthermore,mixture 601 can consist solely of H2O2 and DCTA or can consist solely of H2O2 and EDTA. Moreover, concentrations of H2O2 that are different from thirty percent by weight can be used inmixture 601. Accordingly, the disclosure of the present invention is not intended to be limiting. Instead, the disclosure of the present invention is intended to be illustrative of the scope of the invention, which is set forth in the following claims.
Claims (20)
Priority Applications (6)
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MYPI99003178A MY118958A (en) | 1998-07-30 | 1999-07-28 | Method of manufacturing electronic components |
JP21584499A JP4484271B2 (en) | 1998-07-30 | 1999-07-29 | Manufacturing method of electronic parts |
TW088112881A TW504766B (en) | 1998-07-30 | 1999-08-17 | Method of manufacturing electronic components |
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US6596619B1 (en) * | 2002-05-17 | 2003-07-22 | Taiwan Semiconductor Manufacturing Company | Method for fabricating an under bump metallization structure |
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US20130140685A1 (en) * | 2011-12-01 | 2013-06-06 | Infineon Technologies Ag | Electronic Device and a Method for Fabricating an Electronic Device |
US9490193B2 (en) * | 2011-12-01 | 2016-11-08 | Infineon Technologies Ag | Electronic device with multi-layer contact |
US10475761B2 (en) | 2011-12-01 | 2019-11-12 | Infineon Technologies Ag | Method for producing electronic device with multi-layer contact |
CN104217968A (en) * | 2013-05-28 | 2014-12-17 | 英飞凌科技股份有限公司 | Method for processing a semiconductor workpiece |
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US11476212B2 (en) * | 2019-01-31 | 2022-10-18 | United Microelectronics Corporation | Semiconductor contact structure having stress buffer layer formed between under bump metal layer and copper pillar |
Also Published As
Publication number | Publication date |
---|---|
KR100617993B1 (en) | 2006-08-31 |
US6436300B2 (en) | 2002-08-20 |
MY118958A (en) | 2005-02-28 |
KR20000011968A (en) | 2000-02-25 |
TW504766B (en) | 2002-10-01 |
JP4484271B2 (en) | 2010-06-16 |
JP2000106362A (en) | 2000-04-11 |
US6413878B1 (en) | 2002-07-02 |
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