US20010033007A1 - Solid state image sensor and method for fabricating the same - Google Patents
Solid state image sensor and method for fabricating the same Download PDFInfo
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- US20010033007A1 US20010033007A1 US09/879,887 US87988701A US2001033007A1 US 20010033007 A1 US20010033007 A1 US 20010033007A1 US 87988701 A US87988701 A US 87988701A US 2001033007 A1 US2001033007 A1 US 2001033007A1
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- 239000007787 solid Substances 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims description 32
- 239000000463 material Substances 0.000 claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims abstract description 4
- 239000000853 adhesive Substances 0.000 claims description 28
- 230000001070 adhesive effect Effects 0.000 claims description 27
- 239000011347 resin Substances 0.000 claims description 19
- 229920005989 resin Polymers 0.000 claims description 19
- 150000004767 nitrides Chemical group 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000012780 transparent material Substances 0.000 claims description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 76
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000274 adsorptive effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Definitions
- the present invention relates to a solid state image sensor, and more particularly, to a solid state image sensor and a method for fabricating the same, which can improve a device sensitivity and allows an effective individualization of chips.
- the solid state image sensor Being a photoelectric conversion device which converts an optical signal into an electric signal, the solid state image sensor is in general provided with a microlens over each of photoelectric conversion area for focusing a light.
- the focused light is directed onto the photoelectric conversion area, and converted into a video charge corresponding to the directed light.
- a curvature, a refractive index, and a focal distance of the microlens should be precisely controlled. That is, in order to improve a picture taking sensitivity, what should be observed are, first, a precise focusing control of the light onto the photoelectric conversion area, second, an optimization of a microlens curvature, and third, elimination of contamination during formation.
- FIG. 1 illustrates a section of a related art solid state image sensor
- FIG. 2 illustrates a system of focal distance calculation of a microlens.
- the related art solid state image sensor is provided with a first p type well 2 formed in a surface of an n type semiconductor substrate 1 , and a photodiode region 4 formed in the first p type well 2 region. And, there are vertical charge coupled device regions 6 between the photodiode regions 4 in a vertical direction for transferring signal charges generated in the photodiode regions 4 in the vertical direction.
- each of the photodiode regions 4 there is a surface P + layer on a surface of each of the photodiode regions 4 for improving a charge generation efficiency.
- a focal distance of the aforementioned related art solid state image sensor is determined by the following method.
- the focal distance of the microlens is fixed by a height ‘t’ of the microlens, a distance ‘t’ between a surface of the photodiode and a bottom plane of the microlens, and refractive indices of air and the microlens n 0 , and n 1 .
- t n 1 n 1 - n 0 ⁇ p 2 - t ′2 2 ⁇ t ′ - t ′
- the ‘t’ has a substantial margin, wherein, if a horizontal margin is ‘d’, a vertical margin Vt can be expressed as dt/2p. Enhancing focusing of light onto the photodiode region by precise focal distance control using the above factors is an important factor in improving the picture taking sensitivity. Other than the focal distance control, optimization of a microlens curvature and a contamination reduction are also important in improving the picture taking sensitivity.
- FIGS. 3 A ⁇ 3 F illustrate sections showing the steps of fabrication of the related art solid state image sensor. After completion of device fabrication process done on a wafer, the following packaging process is proceeded.
- FIG. 3A after a UV tape 32 is attached to an entire surface of the wafer 31 having individual chips fabricated thereon, the wafer is subjected to die sawing along a scribe line in the wafer 31 using a sawing machine 33 . Foreign matters 34 in a nature of a resin fallen off from the UV tape 32 during the die sawing are present on a surface of the wafer 31 . Then, as shown in FIG. 3B, a UV ray is directed to the chip of which die sawing is completed for easy removal of the chip from the UV tape 32 . As shown in FIG.
- 3C which illustrates a partially enlarged section of an individual chip portion
- the direction of UV ray hardens an adhesive composition 36 in the UV tape 32 in contact with the microlens, which weakens an adhesive force of the adhesive composition 36 .
- An initial adhesive force of the adhesive composition on the UV tape 32 is in a range of 300 ⁇ 400 g/25 mm. It is found that the direction of UV ray to the UV tape in a non-actual fabrication state reduces the adhesive force down to 1 ⁇ 30 g/25 mm. However, the reduction of the adhesive force in an actual fabrication is not so great, but is in a range of 50 ⁇ 100 g/25 mm.
- the microlens is formed of a resin of a polyimide group
- the adhesive composition on the UV tape is a photoresist resin of the same group.
- FIG. 4D after a remove tape 37 is attached to the UV tape 32 used for supporting the chip in the die sawing, the UV tape 32 attached to the surface of the wafer 31 is removed using the remove tape 37 .
- FIG. 3E because the UV tape 32 is removed in a state a complete hardening of the adhesive composition is not fulfilled, there are foreign matters 34 in a nature of resin from the UV adhesive agent and particles 38 of the UV tape are present on the surface of the wafer 31 .
- FIG. 3F which is a partially enlarged view centered on the microlens 35 , those foreign matters are still present even in an individual chip state after finish of the die sawing.
- the aforementioned related art solid state image sensor has the following problems.
- the adhesive force of the UV tape should be reduced in the UV tape removal step for die attachment after the die sawing, the reduction of the adhesive force is difficult because the UV tape is formed of a polyimide group identical to a material of the microlens, to leave foreign matters in a nature of resin, silicon dusts, and UV tape debris on the microlens in the UV tape removal step using the remove tape, which causes formation of scratch on the microlens.
- the related art solid state image sensor has a low sensitivity and yield caused by the above problems.
- the present invention is directed to a solid state image sensor and a method for fabricating the same that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
- An object of the present invention is to provide a solid state image sensor and a method for fabricating the same, which can improve a device sensitivity, suppress formation of contaminants in a chip individualization process, and permits easy removal of the contaminants.
- the solid state image sensor having photodiode regions for converting optical image signal into an electrical signal and charge coupled device regions for transferring video charges generated in the photodiode regions in one direction, includes first microlens layers spaced from one another and formed over the photodiode regions to be opposite thereto for focusing lights onto the photodiode regions, and second microlens layers formed of a material having a refractive index greater than the first microlens layers on an entire surface of the first microlens layers for focusing lights incident to edge portions of the first microlens layers and spaces between the first microlens layers onto the photodiode regions.
- a method for fabricating a solid state image sensor including the steps of (1) attaching a UV tape on a wafer after forming first microlens layers opposite to photodiode regions respectively and second microlens layers on an entire surface inclusive of the first microlens layers, (2) subjecting the wafer to die sawing along a scribe line on the wafer for individualization of devices, (3) directing a UV ray onto an entire surface of the wafer directly, to harden an adhesive composition on the UV tape for the first time, and to harden the adhesive composition again by the UV ray reflected at the second microlens layer, and (4) attaching a remove tape on the UV tape passed through the step (3) and removing the UV tape and foreign residual matters using the remove tape.
- FIG. 1 illustrates a section of a related art solid state image sensor
- FIG. 2 illustrates a system of focal distance calculation of a microlens
- FIGS. 3 A ⁇ 3 F illustrate sections showing the steps of a related art method for fabricating a solid state image sensor
- FIG. 4 illustrates a section of a solid state image sensor in accordance with a preferred embodiment of the present invention.
- FIGS. 5 A ⁇ 5 F illustrate sections showing the steps of a method for fabricating a solid state image sensor in accordance with a preferred embodiment of the present invention.
- FIG. 4 illustrates a section of a solid state image sensor in accordance with a preferred embodiment of the present invention.
- the solid state image sensor of the present invention suggests formation of a first microlens layer under appropriate curvature, gap and focal distance control and formation of a second microlens layer of a protection film which permits easy removal and suppression of the foreign matters in a following package process.
- the solid state image sensor in accordance with a preferred embodiment of the present invention includes a first p type well 42 formed in a surface of an n type semiconductor substrate 41 , and a photodiode region 44 formed in the first p type well 42 region. And, there are vertical charge coupled regions 46 formed between the photodiode regions 44 in a vertical direction for transfer of signals generated in the photodiode regions 44 in the vertical direction. There is a second p type well 43 having p type ions implanted therein formed beneath each of the vertical charge coupled regions 46 for improving a charge transfer efficiency, and there is a channel stop layer 45 between the photodiode regions 44 and the vertical charge coupled regions 46 for electrical separation of each of the regions.
- each of the photodiode regions 44 There is a surface p + layer formed on a surface of each of the photodiode regions 44 for improving a charge generation efficiency.
- polygate electrodes 48 formed insulated by an interlayer insulating layer 47 repeatedly on the vertical charge coupled regions 46 and a metal light shielding layer 49 on regions excluding the photodiode regions 44 which actually focus lights for preventing smear.
- planarizing layer 50 formed on an entire surface having the metal light shielding layer 49 formed thereon, and a color filter layer 51 on the planarizing layer 50 at each position opposite to each of the photodiode regions 44 for transmission of a light in a specific wavelength range only.
- a top coat 52 on an entire surface inclusive of the color filter layer 51 , and a bilayered microlens layer formed on the top coat 52 at a position opposite to each of the photodiode regions 44 for focusing the light incident to the top coat 52 .
- a first microlens layer 53 is formed.
- the first microlens layer 53 is formed by coating a microlens resin, patterning the microlens resin coating to be opposite to each photodiode region, and subjecting the patterned microlens resin coating to thermal reflowing.
- a second microlens layer 54 of nitride(P—SiN) layer deposited by a plasma CVD(Chemical Vapour Deposition) is formed on an entire surface having the first microlens layer 53 formed thereon.
- the second microlens layer 54 has a thickness of 100 ⁇ 10000 ⁇ .
- the second microlens layer 54 may be formed of any transparent material with a refractive index to a light equal to or higher than 1 other than the nitride.
- the refractive index of the first microlens layer 53 is in a range of 1.4 ⁇ 1.5
- the refractive index of the second microlens layer 54 of the nitride is in a range of 1.9 ⁇ 2.0.
- the second microlens layer 54 when the second microlens layer 54 is formed of P—SiO among materials with an refractive index equal to or higher than 1, the second microlens layer has a refractive index ranging 1.5 ⁇ 1.7.
- the second microlens layer 54 acts as a protection film for protecting the first microlens layer 53 in a following package process.
- the second microlens layer 54 since the second microlens layer 54 is formed on the entire surface, the second microlens layer 54 can make an effective focusing both of the light incident to the gap between the first microlens layers 53 and the light incident to edges of the first microlens layers 53 .
- the second microlens layer 54 reduces the adhesive force of the UV tape used in the following individualization of the chip, and suppresses formation of foreign matters in the die sawing.
- FIGS. 5 A ⁇ 5 F illustrate sections showing the steps of a method for fabricating a solid state image sensor in accordance with a preferred embodiment of the present invention.
- the method for fabricating a solid state image sensor in accordance with a preferred embodiment of the present invention starts with attaching a UV tape 64 on a wafer 63 having CCD individual chips, including first microlens layers 61 each formed at a position opposite to each of photodiode regions taking a focal distance, a curvature and a gap between the microlenses into consideration, and a second microlens layer 62 of a transparent material with a refractive index greater than the first microlens layer 61 .
- the first microlens layer 61 is formed by coating a microlens resin, patterning the microlens resin coating to be opposite to each photodiode region, and subjecting the patterned microlens resin coating to thermal reflowing.
- the second microlens layer 62 is formed of nitride (P—SiN) by a plasma CVD.
- the P—SiN layer is deposited in an N 2 gas ambient using NH 3 and SiH 4 as a reaction gas at a temperature of 150 ⁇ 200° C. under 2.7 torr for 9 ⁇ 10 sec to a thickness of 100 ⁇ 1000 ⁇ .
- the second microlens layer 62 may be formed of any transparent material with a refractive index to a light equal to or higher than 1 other than the nitride layer.
- the refractive index of the first microlens layer 61 is in a range of 1.4 ⁇ 1.5
- the refractive index of the second microlens layer 54 of the nitride is in a range of 1.9 ⁇ 2.0.
- the second microlens layer 62 is formed of P—SiO among materials with an refractive index equal to or higher than 1, the second microlens layer has a refractive index ranging 1.5 ⁇ 1.7. Then, as shown in FIG.
- the wafer 63 is subjected to die sawing along a scribe line in the wafer 62 using a sawing machine 65 , thereby separating individual chips.
- ID foreign matters 66 in a nature of resin is produced.
- a UV ray is directed onto an entire surface of the wafer 63 individualized by the die sawing.
- FIG. 5C illustrates an enlarged view of a section of the individualized chip.
- the UV directed to the wafer 63 directly in the UV direction step hardens an adhesive composition for the first time, and a UV ray reflected at the second microlens layer 62 hardens the adhesive composition for the second time.
- This hardening process of the adhesive composition reduces the adhesive force from 300 ⁇ 400 g/25 mm down to 1 ⁇ 10 g/25 mm. Then, as shown in FIG. 5D, a remove tape 68 is attached to the UV tape 64 passed through the adhesive composition 67 hardening step by the UV ray direction, and the UV tape 64 attached to a surface of the wafer 63 and foreign matters 66 in a nature of resin present on the UV tape 64 are removed using the remove tape 68 . As the adhesive composition 67 on the UV tape 64 is hardened adequately in the UV tape 64 removal step, which weakens the adhesive force substantially, the UV tape 64 is removed from the surface of the wafer 63 , readily. It can be known from FIGS.
- FIG. 5F illustrates a partially enlarged view of a section of the device after the UV tape 64 is removed.
- the adhesive composition 67 of the UV tape 64 is hardened smoothly and an adsorptive force between the foreign matters 66 in a nature of resin and the second microlens layer 62 is small as the second microlens layer 62 is formed of a material in a group different from the UV tape 64 on an entire surface.
- a die attachment process for attaching the chip individualized by the die sawing to a ceramic substrate, a die bonding process for electrical wiring of the chip, sealing the chip, and the like are proceeded, to complete fabrication of the solid state image sensor (not shown).
- the second microlens layer is formed of material with a great refractive index in a gap between adjacent first microlens layers, the gap between microlenses can be optimized, thereby permitting the first microlens to secure a required curvature with easy and eliminating a possibility of contaminants left on the microlens by optimizing the gap even if a groove between the first microlenses becomes deeper.
- the second microlens layer which is formed on an entire surface, can correct size and shape irregularities of the microlens occurred in the thermal reflowing in the formation of the first microlens layer, a yield can be improved.
- the second microlens layer acts as a protection film in a step of transporting a wafer for packaging after FAB out, a possibility of occurrence of defects is reduced.
- the second microlens layer is formed of a material which is not adsorptive to foreign matters fallen off in the die sawing and from the UV tape, re-deposition of the foreign matters is prevented.
- the second microlens layer acts as a protection film, to prevent occurrence of scratch in the die sawing and the wafer transportation.
Abstract
Description
- 1. Field of the Invention
- The present invention relates to a solid state image sensor, and more particularly, to a solid state image sensor and a method for fabricating the same, which can improve a device sensitivity and allows an effective individualization of chips.
- 2. Background of the Related Art
- Being a photoelectric conversion device which converts an optical signal into an electric signal, the solid state image sensor is in general provided with a microlens over each of photoelectric conversion area for focusing a light. The focused light is directed onto the photoelectric conversion area, and converted into a video charge corresponding to the directed light. For an effective focusing of the light, a curvature, a refractive index, and a focal distance of the microlens should be precisely controlled. That is, in order to improve a picture taking sensitivity, what should be observed are, first, a precise focusing control of the light onto the photoelectric conversion area, second, an optimization of a microlens curvature, and third, elimination of contamination during formation.
- A related art solid state image sensor will be explained with reference to the attached drawings. FIG. 1 illustrates a section of a related art solid state image sensor, and FIG. 2 illustrates a system of focal distance calculation of a microlens.
- The related art solid state image sensor is provided with a first
p type well 2 formed in a surface of an ntype semiconductor substrate 1, and aphotodiode region 4 formed in the firstp type well 2 region. And, there are vertical charge coupleddevice regions 6 between thephotodiode regions 4 in a vertical direction for transferring signal charges generated in thephotodiode regions 4 in the vertical direction. There is a secondp type well 3 having p type ions implanted therein beneath the vertical charge coupledregion 6 for improving a charge transfer efficiency, and there is achannel stop layer 5 between thephotodiode regions 4 and the vertical charge coupledregions 6 for electrical separation of the regions. There is a surface P+ layer on a surface of each of thephotodiode regions 4 for improving a charge generation efficiency. And, there arepolygate electrodes 8 formed repeatedly on the vertical charge coupleddevice regions 6 insulated by aninterlayer insulating layer 7, and there a metallight shielding layer 9 for preventing smear on regions excluding thephotodiode regions 4 at which actual light focusing is made. There is a planarizinglayer 10 on an entire surface of the metallight shielding layer 9, and acolor filter layer 11 on the planarizinglayer 10 opposite to each of thephotodiode regions 4 for only transmission of a specific wavelength. There is atop coat 12 on an entire surface inclusive of thecolor filter layer 11, and there is amicrolens 13 formed on thetop coat 12 opposite to each of thephotodiode regions 4. - A focal distance of the aforementioned related art solid state image sensor is determined by the following method.
-
-
- Where p is a horizontal distance between cells divided by 2.
- Thus, the ‘t’ has a substantial margin, wherein, if a horizontal margin is ‘d’, a vertical margin Vt can be expressed as dt/2p. Enhancing focusing of light onto the photodiode region by precise focal distance control using the above factors is an important factor in improving the picture taking sensitivity. Other than the focal distance control, optimization of a microlens curvature and a contamination reduction are also important in improving the picture taking sensitivity.
- Upon completion of fabrication of the related art solid state image sensor thus, a chip individualization process is proceeded as follows. FIGS.3A˜3F illustrate sections showing the steps of fabrication of the related art solid state image sensor. After completion of device fabrication process done on a wafer, the following packaging process is proceeded.
- Referring to FIG. 3A, after a
UV tape 32 is attached to an entire surface of thewafer 31 having individual chips fabricated thereon, the wafer is subjected to die sawing along a scribe line in thewafer 31 using asawing machine 33.Foreign matters 34 in a nature of a resin fallen off from theUV tape 32 during the die sawing are present on a surface of thewafer 31. Then, as shown in FIG. 3B, a UV ray is directed to the chip of which die sawing is completed for easy removal of the chip from theUV tape 32. As shown in FIG. 3C which illustrates a partially enlarged section of an individual chip portion, the direction of UV ray hardens anadhesive composition 36 in theUV tape 32 in contact with the microlens, which weakens an adhesive force of theadhesive composition 36. An initial adhesive force of the adhesive composition on theUV tape 32 is in a range of 300˜400 g/25 mm. It is found that the direction of UV ray to the UV tape in a non-actual fabrication state reduces the adhesive force down to 1˜30 g/25 mm. However, the reduction of the adhesive force in an actual fabrication is not so great, but is in a range of 50˜100 g/25 mm. Because the microlens is formed of a resin of a polyimide group, and the adhesive composition on the UV tape is a photoresist resin of the same group. As shown in FIG. 4D, after aremove tape 37 is attached to theUV tape 32 used for supporting the chip in the die sawing, theUV tape 32 attached to the surface of thewafer 31 is removed using theremove tape 37. As shown in FIG. 3E, because theUV tape 32 is removed in a state a complete hardening of the adhesive composition is not fulfilled, there areforeign matters 34 in a nature of resin from the UV adhesive agent andparticles 38 of the UV tape are present on the surface of thewafer 31. As shown in FIG. 3F which is a partially enlarged view centered on themicrolens 35, those foreign matters are still present even in an individual chip state after finish of the die sawing. - The aforementioned related art solid state image sensor has the following problems.
- First, there is a limitation in focusing a light because the focusing is fully dependent on a refraction of the microlens in the process that the light is focused through the microlens and directed to the photodiode. This limitation comes from a limitation of a refractive index of a material of the microlens itself and a limitation of a refractive index of the microlens coming from different fabrication conditions considering the curvature and the like.
- Second, there is a gap of approx. 2 μm provided between adjacent microlenses for obtaining a required curvature of the microlens. If the gap is not provided, but the microlenses are formed bringing the microlenses to full contact, there will be a deep groove formed between adjacent microlenses, which makes removal of the foreign matters difficult. The light incident to the gap of the microlenses is not focused by the microlenses. Accordingly, the presence of gap between the microlenses drops an effective light focusing efficiency.
- Third, though the adhesive force of the UV tape should be reduced in the UV tape removal step for die attachment after the die sawing, the reduction of the adhesive force is difficult because the UV tape is formed of a polyimide group identical to a material of the microlens, to leave foreign matters in a nature of resin, silicon dusts, and UV tape debris on the microlens in the UV tape removal step using the remove tape, which causes formation of scratch on the microlens.
- The related art solid state image sensor has a low sensitivity and yield caused by the above problems.
- Accordingly, the present invention is directed to a solid state image sensor and a method for fabricating the same that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
- An object of the present invention is to provide a solid state image sensor and a method for fabricating the same, which can improve a device sensitivity, suppress formation of contaminants in a chip individualization process, and permits easy removal of the contaminants.
- Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
- To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, the solid state image sensor having photodiode regions for converting optical image signal into an electrical signal and charge coupled device regions for transferring video charges generated in the photodiode regions in one direction, includes first microlens layers spaced from one another and formed over the photodiode regions to be opposite thereto for focusing lights onto the photodiode regions, and second microlens layers formed of a material having a refractive index greater than the first microlens layers on an entire surface of the first microlens layers for focusing lights incident to edge portions of the first microlens layers and spaces between the first microlens layers onto the photodiode regions.
- In other aspect of the present invention, there is provided a method for fabricating a solid state image sensor including the steps of (1) attaching a UV tape on a wafer after forming first microlens layers opposite to photodiode regions respectively and second microlens layers on an entire surface inclusive of the first microlens layers, (2) subjecting the wafer to die sawing along a scribe line on the wafer for individualization of devices, (3) directing a UV ray onto an entire surface of the wafer directly, to harden an adhesive composition on the UV tape for the first time, and to harden the adhesive composition again by the UV ray reflected at the second microlens layer, and (4) attaching a remove tape on the UV tape passed through the step (3) and removing the UV tape and foreign residual matters using the remove tape.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
- The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention:
- In the drawings:
- FIG. 1 illustrates a section of a related art solid state image sensor;
- FIG. 2 illustrates a system of focal distance calculation of a microlens;
- FIGS.3A˜3F illustrate sections showing the steps of a related art method for fabricating a solid state image sensor;
- FIG. 4 illustrates a section of a solid state image sensor in accordance with a preferred embodiment of the present invention; and,
- FIGS.5A˜5F illustrate sections showing the steps of a method for fabricating a solid state image sensor in accordance with a preferred embodiment of the present invention.
- Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. FIG. 4 illustrates a section of a solid state image sensor in accordance with a preferred embodiment of the present invention. The solid state image sensor of the present invention suggests formation of a first microlens layer under appropriate curvature, gap and focal distance control and formation of a second microlens layer of a protection film which permits easy removal and suppression of the foreign matters in a following package process.
- Referring to FIG. 4, the solid state image sensor in accordance with a preferred embodiment of the present invention includes a first p type well42 formed in a surface of an n
type semiconductor substrate 41, and aphotodiode region 44 formed in the first p type well 42 region. And, there are vertical charge coupledregions 46 formed between thephotodiode regions 44 in a vertical direction for transfer of signals generated in thephotodiode regions 44 in the vertical direction. There is a second p type well 43 having p type ions implanted therein formed beneath each of the vertical charge coupledregions 46 for improving a charge transfer efficiency, and there is achannel stop layer 45 between thephotodiode regions 44 and the vertical charge coupledregions 46 for electrical separation of each of the regions. There is a surface p+ layer formed on a surface of each of thephotodiode regions 44 for improving a charge generation efficiency. There arepolygate electrodes 48 formed insulated by aninterlayer insulating layer 47 repeatedly on the vertical charge coupledregions 46 and a metallight shielding layer 49 on regions excluding thephotodiode regions 44 which actually focus lights for preventing smear. There are aplanarizing layer 50 formed on an entire surface having the metallight shielding layer 49 formed thereon, and acolor filter layer 51 on theplanarizing layer 50 at each position opposite to each of thephotodiode regions 44 for transmission of a light in a specific wavelength range only. There are atop coat 52 on an entire surface inclusive of thecolor filter layer 51, and a bilayered microlens layer formed on thetop coat 52 at a position opposite to each of thephotodiode regions 44 for focusing the light incident to thetop coat 52. First, taking the focal distance, curvature and a gap between the microlenses into consideration, afirst microlens layer 53 is formed. Thefirst microlens layer 53 is formed by coating a microlens resin, patterning the microlens resin coating to be opposite to each photodiode region, and subjecting the patterned microlens resin coating to thermal reflowing. Then, asecond microlens layer 54 of nitride(P—SiN) layer deposited by a plasma CVD(Chemical Vapour Deposition) is formed on an entire surface having thefirst microlens layer 53 formed thereon. Thesecond microlens layer 54 has a thickness of 100˜10000 Å. Thesecond microlens layer 54 may be formed of any transparent material with a refractive index to a light equal to or higher than 1 other than the nitride. The refractive index of thefirst microlens layer 53 is in a range of 1.4˜1.5, and the refractive index of thesecond microlens layer 54 of the nitride is in a range of 1.9˜2.0. As another embodiment, when thesecond microlens layer 54 is formed of P—SiO among materials with an refractive index equal to or higher than 1, the second microlens layer has a refractive index ranging 1.5˜1.7. Thesecond microlens layer 54 acts as a protection film for protecting thefirst microlens layer 53 in a following package process. And, since thesecond microlens layer 54 is formed on the entire surface, thesecond microlens layer 54 can make an effective focusing both of the light incident to the gap between the first microlens layers 53 and the light incident to edges of the first microlens layers 53. Moreover, thesecond microlens layer 54 reduces the adhesive force of the UV tape used in the following individualization of the chip, and suppresses formation of foreign matters in the die sawing. - A packaging process using the
second microlens layer 54 as a protection film will be explained. FIGS. 5A˜5F illustrate sections showing the steps of a method for fabricating a solid state image sensor in accordance with a preferred embodiment of the present invention. - Referring to FIG. 5A, the method for fabricating a solid state image sensor in accordance with a preferred embodiment of the present invention starts with attaching a
UV tape 64 on awafer 63 having CCD individual chips, including first microlens layers 61 each formed at a position opposite to each of photodiode regions taking a focal distance, a curvature and a gap between the microlenses into consideration, and asecond microlens layer 62 of a transparent material with a refractive index greater than thefirst microlens layer 61. Thefirst microlens layer 61 is formed by coating a microlens resin, patterning the microlens resin coating to be opposite to each photodiode region, and subjecting the patterned microlens resin coating to thermal reflowing. And, thesecond microlens layer 62 is formed of nitride (P—SiN) by a plasma CVD. The P—SiN layer is deposited in an N2 gas ambient using NH3 and SiH4 as a reaction gas at a temperature of 150˜200° C. under 2.7 torr for 9˜10 sec to a thickness of 100˜1000Å. Thesecond microlens layer 62 may be formed of any transparent material with a refractive index to a light equal to or higher than 1 other than the nitride layer. The refractive index of thefirst microlens layer 61 is in a range of 1.4˜1.5, and the refractive index of thesecond microlens layer 54 of the nitride is in a range of 1.9˜2.0. As another embodiment, when thesecond microlens layer 62 is formed of P—SiO among materials with an refractive index equal to or higher than 1, the second microlens layer has a refractive index ranging 1.5˜1.7. Then, as shown in FIG. 5B, thewafer 63 is subjected to die sawing along a scribe line in thewafer 62 using a sawingmachine 65, thereby separating individual chips. In cutting theUV tape 64, ID foreign matters 66 in a nature of resin is produced. As shown in FIG. 5C, a UV ray is directed onto an entire surface of thewafer 63 individualized by the die sawing. FIG. 5C illustrates an enlarged view of a section of the individualized chip. The UV directed to thewafer 63 directly in the UV direction step hardens an adhesive composition for the first time, and a UV ray reflected at thesecond microlens layer 62 hardens the adhesive composition for the second time. This hardening process of the adhesive composition reduces the adhesive force from 300˜400 g/25 mm down to 1˜10 g/25 mm. Then, as shown in FIG. 5D, aremove tape 68 is attached to theUV tape 64 passed through theadhesive composition 67 hardening step by the UV ray direction, and theUV tape 64 attached to a surface of thewafer 63 andforeign matters 66 in a nature of resin present on theUV tape 64 are removed using theremove tape 68. As theadhesive composition 67 on theUV tape 64 is hardened adequately in theUV tape 64 removal step, which weakens the adhesive force substantially, theUV tape 64 is removed from the surface of thewafer 63, readily. It can be known from FIGS. 5E and 5F that there are no foreign matters in a nature of resin and residue of the UV tape left on the surface of thewafer 63 after removal of theUV tape 64. FIG. 5F illustrates a partially enlarged view of a section of the device after theUV tape 64 is removed. There are no foreign matters in a nature of resin and residue of the UV tape left on thesecond microlens layer 62 because theadhesive composition 67 of theUV tape 64 is hardened smoothly and an adsorptive force between theforeign matters 66 in a nature of resin and thesecond microlens layer 62 is small as thesecond microlens layer 62 is formed of a material in a group different from theUV tape 64 on an entire surface. As following fabrication processes, a die attachment process for attaching the chip individualized by the die sawing to a ceramic substrate, a die bonding process for electrical wiring of the chip, sealing the chip, and the like are proceeded, to complete fabrication of the solid state image sensor (not shown). - The solid state image sensor and the method for fabricating the same have the following advantages.
- First, as focusing of a light incident to the photodiode region is made by the second microlens layer which focuses lights incident to the first microlens layer, the edge portions, and the gap portion, a light focusing efficiency can be improved.
- Second, because the second microlens layer is formed of material with a great refractive index in a gap between adjacent first microlens layers, the gap between microlenses can be optimized, thereby permitting the first microlens to secure a required curvature with easy and eliminating a possibility of contaminants left on the microlens by optimizing the gap even if a groove between the first microlenses becomes deeper.
- Third, because the second microlens layer, which is formed on an entire surface, can correct size and shape irregularities of the microlens occurred in the thermal reflowing in the formation of the first microlens layer, a yield can be improved.
- Fourth, since the second microlens layer acts as a protection film in a step of transporting a wafer for packaging after FAB out, a possibility of occurrence of defects is reduced.
- Fifth, because the UV directed to the wafer directly in the UV direction step which is conducted for die attachment after the die sawing hardens an adhesive composition for the first time, and a UV ray reflected at the second microlens layer hardens the adhesive composition for the second time, removal of the UV tape and foreign matters is easy, that prevents the foreign matters in a nature of resin, silicon dusts, and UV tape debris from being left on the device surface, whereby suppressing occurrence of defects, such as white defects.
- Sixth, as the second microlens layer is formed of a material which is not adsorptive to foreign matters fallen off in the die sawing and from the UV tape, re-deposition of the foreign matters is prevented.
- Seventh, the second microlens layer acts as a protection film, to prevent occurrence of scratch in the die sawing and the wafer transportation.
- It will be apparent to those skilled in the art that various modifications and variations can be made in the solid state image sensor and a method for fabricating the same of the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Claims (16)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/879,887 US6407415B2 (en) | 1989-06-16 | 2001-06-14 | Solid state image sensor and method for fabricating the same |
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR17384/1999 | 1999-05-14 | ||
KR99/17384 | 1999-05-14 | ||
KR19990017384 | 1999-05-14 | ||
KR99/22582 | 1999-06-16 | ||
KR1019990022582A KR100357178B1 (en) | 1999-05-14 | 1999-06-16 | Solid state image sensing device and method for fabricating the same |
US09/366,557 US6271103B1 (en) | 1999-05-14 | 1999-08-04 | Solid state image sensor and method for fabricating the same |
US09/879,887 US6407415B2 (en) | 1989-06-16 | 2001-06-14 | Solid state image sensor and method for fabricating the same |
Related Parent Applications (1)
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US09/366,557 Division US6271103B1 (en) | 1989-06-16 | 1999-08-04 | Solid state image sensor and method for fabricating the same |
Publications (2)
Publication Number | Publication Date |
---|---|
US20010033007A1 true US20010033007A1 (en) | 2001-10-25 |
US6407415B2 US6407415B2 (en) | 2002-06-18 |
Family
ID=26635140
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/366,557 Expired - Lifetime US6271103B1 (en) | 1989-06-16 | 1999-08-04 | Solid state image sensor and method for fabricating the same |
US09/879,887 Expired - Lifetime US6407415B2 (en) | 1989-06-16 | 2001-06-14 | Solid state image sensor and method for fabricating the same |
Family Applications Before (1)
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US09/366,557 Expired - Lifetime US6271103B1 (en) | 1989-06-16 | 1999-08-04 | Solid state image sensor and method for fabricating the same |
Country Status (2)
Country | Link |
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US (2) | US6271103B1 (en) |
KR (1) | KR100357178B1 (en) |
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Also Published As
Publication number | Publication date |
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KR20000075371A (en) | 2000-12-15 |
KR100357178B1 (en) | 2002-10-18 |
US6407415B2 (en) | 2002-06-18 |
US6271103B1 (en) | 2001-08-07 |
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