US20010035346A1 - Apparatus and method for electroplating - Google Patents
Apparatus and method for electroplating Download PDFInfo
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- US20010035346A1 US20010035346A1 US09/867,626 US86762601A US2001035346A1 US 20010035346 A1 US20010035346 A1 US 20010035346A1 US 86762601 A US86762601 A US 86762601A US 2001035346 A1 US2001035346 A1 US 2001035346A1
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- electroplating
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/04—Removal of gases or vapours ; Gas or pressure control
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/003—Electroplating using gases, e.g. pressure influence
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/241—Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
Definitions
- the present invention relates to an apparatus for electroplating and a method for electroplating, and particularly it relates to an apparatus for electroplating and a method for electroplating, in-which copper is formed into a film in a semiconductor device by electroplating.
- Formation of a copper film by an electroplating method receives attention as a recent method of copper embedding.
- a barrier metal layer is formed in a groove or a connecting hole, and then a copper film is formed by an electroplating method using a copper sulfate solution.
- a copper film is often formed by a sputtering method or a CVD (chemical vapor deposition) method on the barrier metal layer and used as a glue layer.
- the electroplating method realizes embedding in a high aspect structure at room temperature
- a barrier metal layer 113 is formed on the inner wall of the concave part 112 and on the interlayer insulating film 111 by forming, for example, a titanium film and a titanium nitride film, as a laminated film, in this order from the lower layer, for example, by a sputtering method, and then a glue layer 114 is further formed thereon.
- the barrier metal layer 113 and the glue layer 114 are formed at the opening parts of the concave part 112 in the form of overhang.
- FIG. 2 is a schematic cross sectional view showing the voids actually formed on producing a copper film by electroplating. As shown in FIG. 2, it has been found that the copper film 116 is grown in the conditions in that the voids 115 are formed over the interior to the upper part of the concave parts (grooves) 112 formed in the interlayer insulating film 111 .
- a face-down structure is employed in that the front surface of the wafer 110 faces the plating solution 121 .
- the plating solution is stored in a plating bath 122 , and an anode 123 is provided in the plating solution 121 .
- the void generated by forming a film by electroplating contains the air as different from a void generated by sputtering under high vacuum. Since the air contains about 20% of oxygen, there is a possibility that the surroundings of the void are oxidized, and increase in resistance and deterioration of reliability may occur.
- the invention relates to an apparatus for electroplating and a method for electroplating that solve the problems described above, and in the apparatus for electroplating, a plating bath is provided in a non-oxidative atmosphere, such as a rare gas atmosphere, a nitrogen gas atmosphere and a hydrogen gas atmosphere.
- a non-oxidative atmosphere such as a rare gas atmosphere, a nitrogen gas atmosphere and a hydrogen gas atmosphere.
- the plating bath is provided in a non-oxidative atmosphere in the apparatus for electroplating, even when a bubble invades into the minute part, such as a groove and a connecting hole, of the article to be plated on immersing the article into a plating solution in the plating bath, so as to form a plated layer with the bubble becoming a void, the void contains a non-oxidative gas but does not contain oxygen. Therefore, the plated layer is not oxidized when the gas contained in the void is absorbed by the plated layer by subjecting the plated layer to the heat treatment to disappear the void. Thus, increase in resistance and deterioration of reliability in the plated layer do not occur.
- an article to be plated is immersed in a plating solution through a non-oxidative atmosphere, such as a rare gas atmosphere, a nitrogen gas atmosphere and a hydrogen gas atmosphere.
- a non-oxidative atmosphere such as a rare gas atmosphere, a nitrogen gas atmosphere and a hydrogen gas atmosphere.
- the article to be plated is immersed in the plating solution through the non-oxidative atmosphere, even when a bubble invades into the minute part, such as a groove and a connecting hole, of the article to be plated on immersing the article into a plating solution, so as to form a plated layer with the bubble becoming a void, the void does not contain oxygen. Therefore, the plated layer is not oxidized when the gas contained in the void is absorbed by the plated layer by subjecting the plated layer to the heat treatment to disappear the void. Thus, increase in resistance and deterioration of reliability in the plated layer do not occur.
- FIGS. 1A to 1 D are schematic cross sectional views showing a conventional embedding process into a groove or a connecting hole by electroplating of copper.
- FIG. 2 is a schematic cross sectional view showing a void generated on forming a copper film by electroplating.
- FIG. 3 is a schematic diagram showing a conventional apparatus for electroplating for a wafer.
- FIGS. 4A and 4B are schematic cross sectional view for describing the problems associated with the conventional method for electroplating.
- FIG. 5 is a schematic diagram showing the first embodiment of the apparatus for electroplating according to the invention.
- FIG. 6 is a schematic diagram showing the second embodiment of the apparatus for electroplating according to the invention.
- FIGS. 7A to 7 C are schematic cross sectional views showing an embodiment of the method for electroplating according to the invention.
- FIGS. 8A and 8B are schematic cross sectional views showing a continued part of the embodiment of the method for electroplating according to the invention.
- an apparatus for electroplating 1 comprises a plating chamber 11 having an interior maintained at a non-oxidative atmosphere, a plating bath 21 provided inside the plating chamber 11 , and means for holding a wafer 41 of a face down type.
- the plating bath 21 contains a plating solution 31 .
- An anode 22 is provided inside the plating solution 31 .
- the plating bath 21 is also equipped with a supplying part and a discharging part (not shown in the figure) for the plating solution 31 .
- the plating bath 21 may be a so-called circulating filtering system.
- the means for holding a wafer 41 is tranportably provided by a driving unit not shown in the figure above the plating solution 31 , and is freely movable in the direction A shown by the arrow in the figure.
- the means for holding a wafer 41 is equipped with a cathode 42 , and the cathode 42 is connected to the surface to be plated (the lower surface in the figure) of the wafer 51 .
- the anode 22 and cathode 42 are connected to a power source not shown in the figure.
- the plating chamber 11 is equipped with a gas supplying part 12 for supplying a non-oxidative gas and a gas evacuation part 13 for evacuating the gas contained in the plating chamber 11 .
- An argon (Ar) gas for example, is filled in the plating chamber 11 .
- the gas to be filled in the plating chamber 11 is not limited to an argon gas as far as it is a non-oxidative gas, and may be a rare gas selected from helium, neon, argon, xenon and krypton, a nitrogen gas or a hydrogen gas.
- the plating chamber 11 preferably has an airtight structure, but may have such a constitution in that the path of the wafer 51 until immersing in the plating solution 31 is in the non-oxidative atmosphere.
- the plating chamber 11 is further equipped with a gate valve 14 for loading and unloading the wafer 51 .
- the plating bath 21 is provided in the plating chamber 11 containing the non-oxidative atmosphere, even when a bubble invades into the minute part, such as a concave part (not shown in the figure), e.g., a groove and a connecting hole, of the wafer 51 to be plated on immersing the wafer 51 into the plating solution 31 in the plating bath 21 , so as to form a plated layer with the bubble becoming a void, the void contains a non-oxidative gas but does not contain oxygen. Therefore, the plated layer is not oxidized when the gas contained in the void is absorbed by the plated layer by subjecting the plated layer to the heat treatment to disappear the void. Thus, increase in resistance and deterioration of reliability in the plated layer do not occur.
- An apparatus for electroplating 2 has a constitution of a so-called multi-chamber type comprising a transportation chamber 61 , as a central part, containing a transportation robot 62 for transporting a wafer 51 , and-further comprises a wafer container on the loading side 71 containing a wafer 51 before treatment, a pre-treating chamber 72 , a plating chamber 11 having the similar constitution as in the first embodiment, a post-treating chamber 73 , and a wafer container on the unloading side 74 , which are connected to the transportation chamber 61 via gate valves 81 to 85 , for example.
- At least the plating chamber 11 , the transportation chamber 61 and the pre-treating chamber 72 each are equipped with a supplying part and an evacuation part of the non-oxidative gas not shown in the figure to maintain the interior thereof at the non-oxidative atmosphere.
- the non-oxidative atmosphere may comprise a rare gas selected from helium, neon, argon, xenon and krypton, a nitrogen gas or a hydrogen gas, as similar to the first embodiment.
- FIGS. 7A to 7 C, 8 A and 8 B One embodiment of the method for electroplating according to the invention will be described with reference to FIGS. 7A to 7 C, 8 A and 8 B. In these figures, for example, the method of forming a copper interconnection is shown.
- the formation of elements is conducted on a silicon substrate (not shown in the figure) by an ordinary LSI process, an interlayer insulating film 52 is the formed. Thereafter, a groove 53 is formed by an ordinary lithography technique and an etching technique (for example, an RIE (reactive ion etching)).
- the groove 53 has a width of 0.4 ⁇ m and a depth of 0.5 82 m.
- a barrier metal layer 54 as an underlayer is formed on the inner wall of the groove 53 and on the interlayer insulating film 52 by a magnetron sputtering method in high vacuum.
- the barrier metal layer 54 may be formed, for example, by forming a titanium film to a thickness of 20 nm and then a titanium nitride film is formed to a thickness of 50 nm.
- the unit sccm means a volume flow amount (cm 3 /min) under the normal state.
- argon the supplying flow amount of which is 30 sccm, for example
- nitrogen the flow amount of which is 80 sccm, for example
- the direct current power of the magnetron sputtering apparatus is 5 kW
- the pressure of the sputtering atmosphere is 0.4 Pa
- the substrate temperature is 150° C.
- a copper layer to be a glue layer 55 is formed to a thickness of, for example, 20 nm by a magnetron sputtering method in high vacuum.
- argon is used as a process gas (the supplying flow amount of which is 100 sccm, for example)
- the direct current power of the magnetron sputtering apparatus is 5 kW
- the pressure of the sputtering atmosphere is 0.4 Pa
- the substrate temperature is 20° C.
- the wafer 51 having been subjected to the process described above is transferred to the apparatus for electroplating 1 described with reference to FIG. 5, to conduct plating of copper on the wafer 51 .
- an argon gas for example, is supplied in a flow amount of 10 dm 3 /min.
- an argon gas is used for forming the non-oxidative atmosphere, it may be a rare gas, such as helium and neon, a nitrogen gas or a hydrogen gas.
- the wafer 51 is subjected to copper plating in the plating solution 31 exposed to the non-oxidative atmosphere.
- copper sulfate the supplying flow amount of which is 67 g/dm 3 , for example
- sulfuric acid the supplying flow amount of which is 170 g/cm 3 , for example
- hydrochloric acid the supplying flow amount of which is 70 ppm, for example
- the temperature of the plating solution 31 is 20° C.
- the current is a direct current of 9 A (in the case of an 8-inch wafer).
- the copper film 57 (including the glue layer 55 ) and the barrier metal layer 54 at the position other than the part to be an interconnection groove are ground by chemical mechanical polishing (hereinafter referred to as CMP), to form an interconnection part 58 in the groove 53 as shown in FIG. 8B.
- CMP chemical mechanical polishing
- a grinding pad comprising a non-woven cloth laminated with a polyurethane closed-cell foamed body (for example, IC1000/SUBA-IV Laminate, a trade name) is used, a slurry comprising alumina abrasive grain for grinding added with a hydrogen peroxide aqueous solution is used as a grinding slurry, the grinding pressure is 100 g/cm 2 , the rotation number of the surface table is 30 rpm, the supplying amount of the grinding slurry is 100 cm 3 /min, and the grinding temperature is from 25 to 30° C.
- a polyurethane closed-cell foamed body for example, IC1000/SUBA-IV Laminate, a trade name
- a slurry comprising alumina abrasive grain for grinding added with a hydrogen peroxide aqueous solution is used as a grinding slurry
- the grinding pressure is 100 g/cm 2
- the rotation number of the surface table is 30 rpm
- interconnection material gold, silver, aluminum, a gold alloy, a silver alloy, a copper alloy and an aluminum alloy may be used as the interconnection material.
- the electroplating in this embodiment may be conducted by using the apparatus 2 for electroplating apparatus of a multi-chamber type described with reference to FIG. 6. Accordingly, by using the non-oxidative atmosphere as not only the atmosphere of the plating chamber but also the atmospheres of the pre-treating chamber, the transportation chamber and the plating chamber, oxidation of the surface of the wafer after the pre-treatment can be prevented, and the adhesion property between the glue layer comprising copper and the copper film formed by the electroplating can be improved.
- an argon gas for example, is used as the non-oxidative gas, and its flow amount is 10 dm 3 /min.
- a gas containing no oxygen such as a rare gas other then an argon gas, a nitrogen gas and a hydrogen gas may be used.
- the apparatus for electroplating of the invention because the plating bath is provided in a non-oxidative atmosphere, even when a bubble invades into the minute part, such as a concave part, e.g., a groove and a connecting hole, of the article to be plated on immersing the article into a plating solution in the plating bath, so as to form a plated layer with the bubble becoming a void, the bubble is composed of an non-oxidative gas, and thus the void contains the non-oxidative gas. Therefore, the plated layer is not oxidized when the gas contained in the void is absorbed by the plated layer by the heat treatment, and increase in resistance and deterioration of reliability in the plated layer can be prevented.
- a concave part e.g., a groove and a connecting hole
- the article to be plated is immersed in the plating bath through a non-oxidative atmosphere, even when a bubble invades into the minute part, such as a concave part, e.g., a groove and a connecting hole, of the article to be plated on immersing the article into a plating solution in the plating bath, the bubble is composed of an non-oxidative gas. Therefore, when a plated layer with the bubble becoming a void, the void contains the non-oxidative gas. Therefore, the plated layer is not oxidized when the gas contained in the void is absorbed by the plated layer by the heat treatment, and increase in resistance and deterioration of reliability in the plated layer can be prevented.
- a concave part e.g., a groove and a connecting hole
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Abstract
An apparatus and a method for electroplating for forming a metal film by an electroplating method. The apparatus comprises a plating bath provided in a non-oxidative atmosphere, and in the method, an article to be plated is immersed in a plating bath through a non-oxidative atmosphere.
Description
- The present invention relates to an apparatus for electroplating and a method for electroplating, and particularly it relates to an apparatus for electroplating and a method for electroplating, in-which copper is formed into a film in a semiconductor device by electroplating.
- With high integration of an LSI (large scale integrated circuit), internal interconnection is becoming minute and multi-layered. Along with such a tendency, development of flattening technique on formation of interconnection and processing technique of minute interconnection, and maintenance of reliability become important problems. As one of the solutions of these problems, embedded interconnection technique has been investigated. In particular, copper embedded interconnection technique aiming at high speed operation and low consumption power is receiving attention.
- Formation of a copper film by an electroplating method receives attention as a recent method of copper embedding. In this method, a barrier metal layer is formed in a groove or a connecting hole, and then a copper film is formed by an electroplating method using a copper sulfate solution. In this case, a copper film is often formed by a sputtering method or a CVD (chemical vapor deposition) method on the barrier metal layer and used as a glue layer. The electroplating method realizes embedding in a high aspect structure at room temperature
- However, the conventional technique described above involves the following problems. The process of embedding copper in a groove or a connecting hole by electroplating of copper is described below. As shown in FIG. 1A, a
concave part 112 comprising the groove and the connecting hole is formed in aninterlayer insulating film 111 by an ordinary RIE (reactive ion etching) method. As shown in FIG. 1B, abarrier metal layer 113 is formed on the inner wall of theconcave part 112 and on theinterlayer insulating film 111 by forming, for example, a titanium film and a titanium nitride film, as a laminated film, in this order from the lower layer, for example, by a sputtering method, and then aglue layer 114 is further formed thereon. At this time, thebarrier metal layer 113 and theglue layer 114 are formed at the opening parts of theconcave part 112 in the form of overhang. - As shown in FIG. 1C, because the coverage of the
barrier metal layer 113 and theglue layer 114 on theconcave part 112 does not become 100%, the resistance of thebarrier metal layer 113 and theglue layer 114 is increased at these parts. Under the circumstances, when electroplating is conducted by immersing in a copperelectroplating solution 121, current concentration occurs at the opening part (shown by arrows in the figure). The rate of the film formation is increased at the part, at which current concentration occurs. Abubble 115 is formed inside theconcave part 112. As a result, acopper film 116 is formed with avoid 115 forming inside theconcave part 112, as shown in FIG. 1D. In FIG. 1C, the figure is drawn with the upper surface of theinterlayer insulating film 111 being downward on the contrary to the other figures. - FIG. 2 is a schematic cross sectional view showing the voids actually formed on producing a copper film by electroplating. As shown in FIG. 2, it has been found that the
copper film 116 is grown in the conditions in that thevoids 115 are formed over the interior to the upper part of the concave parts (grooves) 112 formed in the interlayerinsulating film 111. - In the
electroplating apparatus 120 for a wafer currently available as shown in FIG. 3, in order to prevent the back surface of thewafer 110 from contacting with a plating solution (containing copper ion) 121, a face-down structure is employed in that the front surface of thewafer 110 faces theplating solution 121. The plating solution is stored in aplating bath 122, and ananode 123 is provided in theplating solution 121. - In the method described above, there is a case where the
plating solution 121 cannot be spread into minute parts formed on the surface of thewafer 110 as shown in FIG. 4A. That is, there is a case where abubble 117 remains inside the concave part (for example, a groove) 112 When electroplating is conducted under such conditions, thecopper film 116 is grown in the condition in that thebubble 117 is remained and avoid 115 is formed inside theconcave part 112, as shown in FIG. 4B. - It has been reported by Y. Harada, et al. inPreprints of 58th Shuki Gakujutu Koenkai of the Japan Society of Applied Physics, 3p-E-4, p. 776 (1997) that the void thus formed is disappeared by subjecting to a heat treatment at about 400°C. However, the void generated by forming a film by electroplating contains the air as different from a void generated by sputtering under high vacuum. Since the air contains about 20% of oxygen, there is a possibility that the surroundings of the void are oxidized, and increase in resistance and deterioration of reliability may occur.
- The invention relates to an apparatus for electroplating and a method for electroplating that solve the problems described above, and in the apparatus for electroplating, a plating bath is provided in a non-oxidative atmosphere, such as a rare gas atmosphere, a nitrogen gas atmosphere and a hydrogen gas atmosphere.
- Because the plating bath is provided in a non-oxidative atmosphere in the apparatus for electroplating, even when a bubble invades into the minute part, such as a groove and a connecting hole, of the article to be plated on immersing the article into a plating solution in the plating bath, so as to form a plated layer with the bubble becoming a void, the void contains a non-oxidative gas but does not contain oxygen. Therefore, the plated layer is not oxidized when the gas contained in the void is absorbed by the plated layer by subjecting the plated layer to the heat treatment to disappear the void. Thus, increase in resistance and deterioration of reliability in the plated layer do not occur.
- In the method for electroplating according to the invention, an article to be plated is immersed in a plating solution through a non-oxidative atmosphere, such as a rare gas atmosphere, a nitrogen gas atmosphere and a hydrogen gas atmosphere.
- Because the article to be plated is immersed in the plating solution through the non-oxidative atmosphere, even when a bubble invades into the minute part, such as a groove and a connecting hole, of the article to be plated on immersing the article into a plating solution, so as to form a plated layer with the bubble becoming a void, the void does not contain oxygen. Therefore, the plated layer is not oxidized when the gas contained in the void is absorbed by the plated layer by subjecting the plated layer to the heat treatment to disappear the void. Thus, increase in resistance and deterioration of reliability in the plated layer do not occur.
- FIGS. 1A to1D are schematic cross sectional views showing a conventional embedding process into a groove or a connecting hole by electroplating of copper.
- FIG. 2 is a schematic cross sectional view showing a void generated on forming a copper film by electroplating.
- FIG. 3 is a schematic diagram showing a conventional apparatus for electroplating for a wafer.
- FIGS. 4A and 4B are schematic cross sectional view for describing the problems associated with the conventional method for electroplating.
- FIG. 5 is a schematic diagram showing the first embodiment of the apparatus for electroplating according to the invention.
- FIG. 6 is a schematic diagram showing the second embodiment of the apparatus for electroplating according to the invention.
- FIGS. 7A to7C are schematic cross sectional views showing an embodiment of the method for electroplating according to the invention.
- FIGS. 8A and 8B are schematic cross sectional views showing a continued part of the embodiment of the method for electroplating according to the invention.
- The first embodiment of the apparatus for electroplating according to the invention will be described with reference to the schematic diagram shown in FIG. 5.
- As shown in FIG. 5, an apparatus for electroplating1 comprises a
plating chamber 11 having an interior maintained at a non-oxidative atmosphere, aplating bath 21 provided inside theplating chamber 11, and means for holding a wafer 41 of a face down type. - The
plating bath 21 contains aplating solution 31. Ananode 22 is provided inside theplating solution 31. The platingbath 21 is also equipped with a supplying part and a discharging part (not shown in the figure) for theplating solution 31. The platingbath 21 may be a so-called circulating filtering system. - The means for holding a wafer41 is tranportably provided by a driving unit not shown in the figure above the
plating solution 31, and is freely movable in the direction A shown by the arrow in the figure. The means for holding a wafer 41 is equipped with acathode 42, and thecathode 42 is connected to the surface to be plated (the lower surface in the figure) of thewafer 51. Theanode 22 andcathode 42 are connected to a power source not shown in the figure. - The
plating chamber 11 is equipped with agas supplying part 12 for supplying a non-oxidative gas and agas evacuation part 13 for evacuating the gas contained in theplating chamber 11. An argon (Ar) gas, for example, is filled in theplating chamber 11. The gas to be filled in theplating chamber 11 is not limited to an argon gas as far as it is a non-oxidative gas, and may be a rare gas selected from helium, neon, argon, xenon and krypton, a nitrogen gas or a hydrogen gas. Theplating chamber 11 preferably has an airtight structure, but may have such a constitution in that the path of thewafer 51 until immersing in theplating solution 31 is in the non-oxidative atmosphere. Theplating chamber 11 is further equipped with agate valve 14 for loading and unloading thewafer 51. - In the apparatus for electroplating1 described above, because the
plating bath 21 is provided in theplating chamber 11 containing the non-oxidative atmosphere, even when a bubble invades into the minute part, such as a concave part (not shown in the figure), e.g., a groove and a connecting hole, of thewafer 51 to be plated on immersing thewafer 51 into theplating solution 31 in theplating bath 21, so as to form a plated layer with the bubble becoming a void, the void contains a non-oxidative gas but does not contain oxygen. Therefore, the plated layer is not oxidized when the gas contained in the void is absorbed by the plated layer by subjecting the plated layer to the heat treatment to disappear the void. Thus, increase in resistance and deterioration of reliability in the plated layer do not occur. - The second embodiment of the apparatus for electroplating according to the invention will be described with reference to the schematic diagram shown in FIG. 6.
- An apparatus for
electroplating 2 has a constitution of a so-called multi-chamber type comprising atransportation chamber 61, as a central part, containing atransportation robot 62 for transporting awafer 51, and-further comprises a wafer container on theloading side 71 containing awafer 51 before treatment, apre-treating chamber 72, aplating chamber 11 having the similar constitution as in the first embodiment, apost-treating chamber 73, and a wafer container on the unloadingside 74, which are connected to thetransportation chamber 61 viagate valves 81 to 85, for example. In this constitution, at least theplating chamber 11, thetransportation chamber 61 and thepre-treating chamber 72 each are equipped with a supplying part and an evacuation part of the non-oxidative gas not shown in the figure to maintain the interior thereof at the non-oxidative atmosphere. - The non-oxidative atmosphere may comprise a rare gas selected from helium, neon, argon, xenon and krypton, a nitrogen gas or a hydrogen gas, as similar to the first embodiment.
- In the apparatus for electroplating2 described above, because the interior of the
plating chamber 11, thetransportation chamber 61 and thepre-treating chamber 72 is maintained at the non-oxidative atmosphere, the wafer having been subjected to the pre-treatment is transported to theplating chamber 11 without suffering oxidation, and subjected to the formation of a plated layer by electroplating. Therefore, even in the case where a plated layer comprising copper or a copper alloy, which are liable to be oxidized, oxidation does not occur from the pre-treatment to the electroplating, and thus a plated layer having high reliability can be produced. - One embodiment of the method for electroplating according to the invention will be described with reference to FIGS. 7A to7C, 8A and 8B. In these figures, for example, the method of forming a copper interconnection is shown.
- As shown in FIG. 7A, the formation of elements, for example, is conducted on a silicon substrate (not shown in the figure) by an ordinary LSI process, an
interlayer insulating film 52 is the formed. Thereafter, agroove 53 is formed by an ordinary lithography technique and an etching technique (for example, an RIE (reactive ion etching)). In this embodiment, for example, thegroove 53 has a width of 0.4 μm and a depth of 0.5 82 m. - As shown in FIG. 7B, a
barrier metal layer 54 as an underlayer is formed on the inner wall of thegroove 53 and on theinterlayer insulating film 52 by a magnetron sputtering method in high vacuum. Thebarrier metal layer 54 may be formed, for example, by forming a titanium film to a thickness of 20 nm and then a titanium nitride film is formed to a thickness of 50 nm. - As an example of the conditions for forming the titanium film, argon is used as a process gas (the supplying flow amount of which is 100 sccm, for example), the direct current power of the magnetron sputtering apparatus is 5 kW, the pressure of the sputtering atmosphere is 0.4 Pa, and the substrate temperature is 150°C. Hereinafter, the unit sccm means a volume flow amount (cm3/min) under the normal state.
- As an example of the conditions for forming the titanium nitride film, argon (the supplying flow amount of which is 30 sccm, for example) and nitrogen (the flow amount of which is 80 sccm, for example) are used as a process gas, the direct current power of the magnetron sputtering apparatus is 5 kW, the pressure of the sputtering atmosphere is 0.4 Pa, and the substrate temperature is 150° C.
- Subsequent to the formation of the
barrier metal layer 54, a copper layer to be aglue layer 55 is formed to a thickness of, for example, 20 nm by a magnetron sputtering method in high vacuum. As an example of the conditions for forming theglue layer 55, argon is used as a process gas (the supplying flow amount of which is 100 sccm, for example), the direct current power of the magnetron sputtering apparatus is 5 kW, the pressure of the sputtering atmosphere is 0.4 Pa, and the substrate temperature is 20° C. - The
wafer 51 having been subjected to the process described above is transferred to the apparatus for electroplating 1 described with reference to FIG. 5, to conduct plating of copper on thewafer 51. In the following description, the same symbols will be used as in FIG. 5. Into theplating chamber 11 of the apparatus for electroplating 1, an argon gas, for example, is supplied in a flow amount of 10 dm3/min. While an argon gas is used for forming the non-oxidative atmosphere, it may be a rare gas, such as helium and neon, a nitrogen gas or a hydrogen gas. Thewafer 51 is subjected to copper plating in theplating solution 31 exposed to the non-oxidative atmosphere. - As the conditions for the electroplating of copper, copper sulfate (the supplying flow amount of which is 67 g/dm3, for example), sulfuric acid (the supplying flow amount of which is 170 g/cm3, for example) and hydrochloric acid (the supplying flow amount of which is 70 ppm, for example) are used as the
plating solution 31, and a surface active agent, as an additive, is added to the plating solution. The temperature of theplating solution 31 is 20° C., and the current is a direct current of 9 A (in the case of an 8-inch wafer). - It is an important factor of the presence of a void remaining inside the groove or connecting hole on the electroplating as to whether or not the
plating solution 31 is spread through the minute part (the interior of the groove or connecting hole). By using the apparatus for electroplating 1 according to the invention, even when acopper film 57 is formed with a void 56 remaining in thegroove 53 as shown in FIG. 7C, the void 56 is filled with an inert gas. - Accordingly, it becomes possible that the void can be disappeared by the subsequent heat treatment of the
copper film 57 with out oxidation of thecopper film 57, so as to bury thecopper film 57 in thegroove 53 as shown in FIG. 8A. - The copper film57 (including the glue layer 55) and the
barrier metal layer 54 at the position other than the part to be an interconnection groove are ground by chemical mechanical polishing (hereinafter referred to as CMP), to form aninterconnection part 58 in thegroove 53 as shown in FIG. 8B. As an example of the conditions for the CMP, a grinding pad comprising a non-woven cloth laminated with a polyurethane closed-cell foamed body (for example, IC1000/SUBA-IV Laminate, a trade name) is used, a slurry comprising alumina abrasive grain for grinding added with a hydrogen peroxide aqueous solution is used as a grinding slurry, the grinding pressure is 100 g/cm2, the rotation number of the surface table is 30 rpm, the supplying amount of the grinding slurry is 100 cm3/min, and the grinding temperature is from 25 to 30° C. - While copper is used as the interconnection material in this embodiment, gold, silver, aluminum, a gold alloy, a silver alloy, a copper alloy and an aluminum alloy may be used as the interconnection material.
- The electroplating in this embodiment may be conducted by using the
apparatus 2 for electroplating apparatus of a multi-chamber type described with reference to FIG. 6. Accordingly, by using the non-oxidative atmosphere as not only the atmosphere of the plating chamber but also the atmospheres of the pre-treating chamber, the transportation chamber and the plating chamber, oxidation of the surface of the wafer after the pre-treatment can be prevented, and the adhesion property between the glue layer comprising copper and the copper film formed by the electroplating can be improved. - In this case, an argon gas, for example, is used as the non-oxidative gas, and its flow amount is 10 dm3/min. As the non-oxidative gas, a gas containing no oxygen, such as a rare gas other then an argon gas, a nitrogen gas and a hydrogen gas may be used.
- As described in the foregoing, according to the apparatus for electroplating of the invention, because the plating bath is provided in a non-oxidative atmosphere, even when a bubble invades into the minute part, such as a concave part, e.g., a groove and a connecting hole, of the article to be plated on immersing the article into a plating solution in the plating bath, so as to form a plated layer with the bubble becoming a void, the bubble is composed of an non-oxidative gas, and thus the void contains the non-oxidative gas. Therefore, the plated layer is not oxidized when the gas contained in the void is absorbed by the plated layer by the heat treatment, and increase in resistance and deterioration of reliability in the plated layer can be prevented.
- According to the method for electroplating of the invention, because the article to be plated is immersed in the plating bath through a non-oxidative atmosphere, even when a bubble invades into the minute part, such as a concave part, e.g., a groove and a connecting hole, of the article to be plated on immersing the article into a plating solution in the plating bath, the bubble is composed of an non-oxidative gas. Therefore, when a plated layer with the bubble becoming a void, the void contains the non-oxidative gas. Therefore, the plated layer is not oxidized when the gas contained in the void is absorbed by the plated layer by the heat treatment, and increase in resistance and deterioration of reliability in the plated layer can be prevented.
Claims (6)
1. An apparatus for electroplating for forming a metal film by an electroplating method, said apparatus comprising a plating bath provided in a non-oxidative atmosphere.
2. An apparatus for electroplating as claimed in , wherein
claim 1
said non-oxidative atmosphere, in which said plating bath is provided, is provided in a plating chamber, and
said apparatus further comprises
a pre-treating chamber, in which a pre-treatment of an article to be plated is conducted, and
a transportation chamber connected to said pre-treating chamber and said plating chamber.
3. An apparatus for electroplating as claimed in , wherein
claim 1
said non-oxidative atmosphere is selected from a rare gas atmosphere, a nitrogen gas atmosphere and a hydrogen gas atmosphere.
4. An apparatus for electroplating as claimed in , wherein
claim 2
said non-oxidative atmosphere is selected from a rare gas atmosphere, a nitrogen gas atmosphere and a hydrogen gas atmosphere.
5. A method for electroplating for forming a metal film by an electroplating method, an article to be plated being immersed in a plating bath through a non-oxidative atmosphere.
6. A method for electroplating as claimed in , wherein
claim 5
said non-oxidative atmosphere is selected from a rare gas atmosphere, a nitrogen gas atmosphere and a hydrogen gas atmosphere.
Priority Applications (1)
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US09/867,626 US20010035346A1 (en) | 1998-04-24 | 2001-05-31 | Apparatus and method for electroplating |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP10114494A JPH11307481A (en) | 1998-04-24 | 1998-04-24 | Equipment and method of electroplating |
JPP10-114494 | 1998-04-24 | ||
US09/296,297 US6241869B1 (en) | 1998-04-24 | 1999-04-22 | Apparatus and method for electroplating |
US09/867,626 US20010035346A1 (en) | 1998-04-24 | 2001-05-31 | Apparatus and method for electroplating |
Related Parent Applications (1)
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US09/296,297 Division US6241869B1 (en) | 1998-04-24 | 1999-04-22 | Apparatus and method for electroplating |
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US20010035346A1 true US20010035346A1 (en) | 2001-11-01 |
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US09/296,297 Expired - Lifetime US6241869B1 (en) | 1998-04-24 | 1999-04-22 | Apparatus and method for electroplating |
US09/867,626 Abandoned US20010035346A1 (en) | 1998-04-24 | 2001-05-31 | Apparatus and method for electroplating |
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US09/296,297 Expired - Lifetime US6241869B1 (en) | 1998-04-24 | 1999-04-22 | Apparatus and method for electroplating |
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JP (1) | JPH11307481A (en) |
Cited By (9)
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US20100320081A1 (en) * | 2009-06-17 | 2010-12-23 | Mayer Steven T | Apparatus for wetting pretreatment for enhanced damascene metal filling |
US9138784B1 (en) | 2009-12-18 | 2015-09-22 | Novellus Systems, Inc. | Deionized water conditioning system and methods |
US9435049B2 (en) | 2013-11-20 | 2016-09-06 | Lam Research Corporation | Alkaline pretreatment for electroplating |
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US9617648B2 (en) | 2015-03-04 | 2017-04-11 | Lam Research Corporation | Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias |
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US7192494B2 (en) * | 1999-03-05 | 2007-03-20 | Applied Materials, Inc. | Method and apparatus for annealing copper films |
JP3285007B2 (en) * | 1999-05-07 | 2002-05-27 | 日本電気株式会社 | Detector for plating equipment |
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US20060118425A1 (en) * | 2000-04-19 | 2006-06-08 | Basol Bulent M | Process to minimize and/or eliminate conductive material coating over the top surface of a patterned substrate |
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US6610600B2 (en) * | 2002-01-29 | 2003-08-26 | Tsung-Kuang Yeh | Damascene copper electroplating process with low-pressure pre-processing |
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US9677188B2 (en) | 2009-06-17 | 2017-06-13 | Novellus Systems, Inc. | Electrofill vacuum plating cell |
US20100320609A1 (en) * | 2009-06-17 | 2010-12-23 | Mayer Steven T | Wetting pretreatment for enhanced damascene metal filling |
US8962085B2 (en) * | 2009-06-17 | 2015-02-24 | Novellus Systems, Inc. | Wetting pretreatment for enhanced damascene metal filling |
US20100320081A1 (en) * | 2009-06-17 | 2010-12-23 | Mayer Steven T | Apparatus for wetting pretreatment for enhanced damascene metal filling |
US9455139B2 (en) | 2009-06-17 | 2016-09-27 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
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US9721800B2 (en) | 2009-06-17 | 2017-08-01 | Novellus Systems, Inc. | Apparatus for wetting pretreatment for enhanced damascene metal filling |
US9828688B2 (en) | 2009-06-17 | 2017-11-28 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
US9852913B2 (en) | 2009-06-17 | 2017-12-26 | Novellus Systems, Inc. | Wetting pretreatment for enhanced damascene metal filling |
US9138784B1 (en) | 2009-12-18 | 2015-09-22 | Novellus Systems, Inc. | Deionized water conditioning system and methods |
US9613833B2 (en) | 2013-02-20 | 2017-04-04 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
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US9435049B2 (en) | 2013-11-20 | 2016-09-06 | Lam Research Corporation | Alkaline pretreatment for electroplating |
US9481942B2 (en) | 2015-02-03 | 2016-11-01 | Lam Research Corporation | Geometry and process optimization for ultra-high RPM plating |
US9617648B2 (en) | 2015-03-04 | 2017-04-11 | Lam Research Corporation | Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias |
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Also Published As
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US6241869B1 (en) | 2001-06-05 |
JPH11307481A (en) | 1999-11-05 |
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