US20010036561A1 - Multilayer devices formed by multilayer thermal transfer - Google Patents
Multilayer devices formed by multilayer thermal transfer Download PDFInfo
- Publication number
- US20010036561A1 US20010036561A1 US09/785,721 US78572101A US2001036561A1 US 20010036561 A1 US20010036561 A1 US 20010036561A1 US 78572101 A US78572101 A US 78572101A US 2001036561 A1 US2001036561 A1 US 2001036561A1
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- layer
- thermal transfer
- transfer
- layers
- receptor
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Images
Classifications
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
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- B41M3/00—Printing processes to produce particular kinds of printed work, e.g. patterns
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B41M5/265—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used for the production of optical filters or electrical components
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- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
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- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1221—Basic optical elements, e.g. light-guiding paths made from organic materials
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/138—Integrated optical circuits characterised by the manufacturing method by using polymerisation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
- B41M5/40—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used characterised by the base backcoat, intermediate, or covering layers, e.g. for thermal transfer dye-donor or dye-receiver sheets; Heat, radiation filtering or absorbing means or layers; combined with other image registration layers or compositions; Special originals for reproduction by thermography
- B41M5/42—Intermediate, backcoat, or covering layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/165—Thermal imaging composition
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
Definitions
- This invention relates to thermal transfer elements and methods of transferring layers to form devices on a receptor.
- the invention relates to a thermal transfer element having a multicomponent transfer unit and methods of using the thermal transfer element for forming a device, such as an optical or electronic device, on a receptor.
- Many miniature electronic and optical devices are formed using layers of different materials stacked on each other. These layers are often patterned to produce the devices. Examples of such devices include optical displays in which each pixel is formed in a patterned array, optical waveguide structures for telecommunication devices, and metal-insulator-metal stacks for semiconductor-based devices.
- a conventional method for making these devices includes forming one or more layers on a receptor substrate and patterning the layers simultaneously or sequentially to form the device.
- multiple deposition and patterning steps are required to prepare the ultimate device structure.
- the preparation of optical displays may require the separate formation of red, green, and blue pixels.
- some layers may be commonly deposited for each of these types of pixels, at least some layers must be separately formed and often separately patterned.
- Patterning of the layers is often performed by photolithographic techniques that include, for example, covering a layer with a photoresist, patterning the photoresist using a mask, removing a portion of the photoresist to expose the underlying layer according to the pattern, and then etching the exposed layer.
- the present invention relates to thermal transfer elements and methods of using thermal transfer elements for forming devices, including optical and electronic devices.
- a thermal transfer element that includes a substrate and a multicomponent transfer unit that, when transferred to a receptor, is configured and arranged to form at least a first operational layer and a second operational layer of a multilayer device.
- the first operational layer is configured and arranged to conduct or produce a charge carrier or to produce or waveguide light.
- the thermal transfer element also includes a light-to-heat conversion (LTHC) layer that can convert light energy to heat energy to transfer the multicomponent transfer unit.
- LTHC light-to-heat conversion
- first operational layer and “second operational layer” do not imply any order of the layers in the device or in the thermal transfer element or the proximity of the two layers to each other (i.e., there may be one or more layers between the first operational layer and the second operational layer.)
- thermal transfer element that includes a substrate and a multicomponent transfer unit disposed on the substrate.
- the multicomponent transfer unit is configured and arranged to form, upon transfer to a receptor, a first operational layer and a second operational layer of an electronic component or an optical device.
- this thermal transfer element may also have a LTHC layer.
- a further embodiment is a thermal transfer element for forming an organic electroluminescent (OEL) device.
- This thermal transfer element includes a substrate and a multicomponent transfer unit that is configured and arranged to form, upon transfer to a receptor, at least two operational layers of the OEL device, such as, for example, an emitter layer and at least one electrode of the OEL device.
- Another embodiment is an OEL device formed using the thermal transfer element.
- thermal transfer element for forming a field effect transistor.
- This thermal transfer element includes a substrate and a multicomponent transfer unit that is configured and arranged to form, upon transfer to a receptor, at least two operational layers of the field effect transistor, such as a gate insulating layer and a semiconducting layer.
- Another embodiment is a field effect transistor formed using the thermal transfer element.
- thermal transfer element for forming a waveguide.
- This thermal transfer element includes a substrate and a multicomponent transfer unit that is configured and arranged to form, upon transfer to a receptor, at least two operational layers of the waveguide, such as at least one cladding layer and a core layer.
- Another embodiment is a waveguide formed using the thermal transfer element.
- a further embodiment is a method of transferring a multicomponent transfer unit to a receptor to form a device, including contacting a receptor with a thermal transfer element having a substrate and a transfer layer.
- the transfer layer includes a multicomponent transfer unit.
- the thermal transfer element is selectively heated to transfer the multicomponent transfer unit to the receptor according to a pattern to form at least a first operational layer and a second operational layer of a device.
- the thermal transfer element includes a LTHC layer between the substrate and the transfer layer.
- the thermal transfer element is illuminated with light according to the pattern and the light energy is converted by the LTHC layer to heat energy to selectively heat the thermal transfer element.
- thermal transfer elements can also be formed with a transfer unit that is configured and arranged to transfer a single layer. It will also be recognized that items, other than devices, may be formed by transferring either a multicomponent transfer unit or a single layer.
- FIG. 1A is a schematic cross-section of one example of a thermal transfer element according to the invention.
- FIG. 1B is a schematic cross-section of a second example of a thermal transfer element according to the invention.
- FIG. 1C is a schematic cross-section of a third example of a thermal transfer element according to the invention.
- FIG. 1D is a schematic cross-section of a fourth example of a thermal transfer element according to the invention.
- FIG. 2A is a schematic cross-section of a first example of a transfer layer, according to the invention, for use in any of the thermal transfer elements of FIGS. 1A to 1 D;
- FIG. 2B is a schematic cross-section of a second example of a transfer layer, according to the invention, for use in any of the thermal transfer elements of FIGS. 1A to 1 D;
- FIG. 2C is a schematic cross-section of a third example of a transfer layer, according to the invention, for use in any of the thermal transfer elements of FIGS. 1A to 1 D;
- FIG. 2D is a schematic cross-section of a fourth example of a transfer layer, according to the invention, for use in any of the thermal transfer elements of FIGS. 1A to 1 D;
- FIG. 3A is a schematic cross-section of an example of a transfer layer, according to the invention, for use in forming an organic electroluminescent device
- FIG. 3B is a schematic cross-section of a second example of a transfer layer, according to the invention, for use in forming an organic electroluminescent device;
- FIGS. 4A to 4 C are cross-sectional views illustrating steps in one example of a process for forming a display device according to the invention.
- FIGS. 5A to 5 D are top views illustrating steps in one example of a process for forming a field effect transistor according to the invention.
- FIGS. 6A to 6 D are cross-sectional views corresponding to FIGS. 5A to 5 D, respectively, and illustrating steps in the one example of a process for forming a field effect transistor.
- FIG. 7 is a cross-sectional view of a coupled field effect transistor and organic electroluminescent device, according to the invention.
- the present invention is applicable to the formation or partial formation of devices and other objects using thermal transfer and thermal transfer elements for forming the devices or other objects.
- a thermal transfer element can be formed for making, at least in part, a multilayer device, such as a multilayer active and passive device, for example, a multilayer electronic and optical device. This can be accomplished, for example, by thermal transfer of a multicomponent transfer unit of a thermal transfer element. It will be recognized that single layer and other multilayer transfers can also be used to form devices and other objects. While the present invention is not so limited, an appreciation of various aspects of the invention will be gained through a discussion of the examples provided below.
- device includes an electronic or optical component that can be used by itself and/or with other components to form a larger system, such as an electronic circuit.
- active device includes an electronic or optical component capable of a dynamic function, such as amplification, oscillation, or signal control, and may require a power supply for operation.
- passive device includes an electronic or optical component that is basically static in operation (i.e., it is ordinarily incapable of amplification or oscillation) and may require no power for characteristic operation.
- active layer includes layers that produce or conduct a charge carrier (e.g., electrons or holes) and/or produce or waveguide light in a device, such as a multilayer passive or active device.
- a charge carrier e.g., electrons or holes
- active layers include layers that act as conducting, semiconducting, superconducting, waveguiding, frequency multiplying, light producing (e.g., luminescing, light emitting, fluorescing or phosphorescing), electron producing, or hole producing layers in the device and/or layers that produce an optical or electronic gain in the device.
- operational layer includes layers that are utilized in the operation of device, such as a multilayer active or passive device.
- operational layers include layers that act as insulating, conducting, semiconducting, superconducting, waveguiding, frequency multiplying, light producing (e.g., luminescing, light emitting, fluorescing or phosphorescing), electron producing, hole producing, magnetic, light absorbing, reflecting, diffracting, phase retarding, scattering, dispersing, refracting, polarizing, or diffusing layers in the device and/or layers that produce an optical or electronic gain in the device.
- light producing e.g., luminescing, light emitting, fluorescing or phosphorescing
- electron producing hole producing, magnetic, light absorbing, reflecting, diffracting, phase retarding, scattering, dispersing, refracting, polarizing, or diffusing layers in the device and/or layers that produce an optical or electronic gain in the device.
- non-operational layer includes layers that do not perform a function in the operation of the device, but are provided solely, for example, to facilitate transfer of a transfer layer to a receptor substrate, to protect layers of the device from damage and/or contact with outside elements, and/or to adhere the transfer layer to the receptor substrate.
- An active or passive device can be formed, at least in part, by the transfer of a transfer layer from a thermal transfer element.
- the thermal transfer element can be heated by application of directed heat on a selected portion of the thermal transfer element.
- Heat can be generated using a heating element (e.g., a resistive heating element), converting radiation (e.g., a beam of light) to heat, and/or applying an electrical current to a layer of the thermal transfer element to generate heat.
- a heating element e.g., a resistive heating element
- converting radiation e.g., a beam of light
- the size and shape of the transferred pattern (e.g., a line, circle, square, or other shape) can be controlled by, for example, selecting the size of the light beam, the exposure pattern of the light beam, the duration of directed beam contact with the thermal transfer element, and the materials of the thermal transfer element.
- the thermal transfer element can include a transfer layer that can be used to form, for example, electronic circuitry, resistors, capacitors, diodes, rectifiers, electroluminescent lamps, memory elements, field effect transistors, bipolar transistors, unijunction transistors, MOS transistors, metal-insulator-semiconductor transistors, charge coupled devices, insulator-metal-insulator stacks, organic conductor-metal-organic conductor stacks, integrated circuits, photodetectors, lasers, lenses, waveguides, gratings, holographic elements, filters (e.g., add-drop filters, gain-flattening filters, cut-off filters, and the like), mirrors, splitters, couplers, combiners, modulators, sensors (e.g., evanescent sensors, phase modulation sensors, interferometric sensors, and the like), optical cavities, piezoelectric devices, ferroelectric devices, thin film batteries, or combinations thereof; for example, the combination of field effect transistors and organic electroluminescent
- Thermal transfer of layers to form devices is useful, for example, to reduce or eliminate wet processing steps of processes such as photolithographic patterning which is used to form many electronic and optical devices.
- thermal transfer using light can often provide better accuracy and quality control for very small devices, such as small optical and electronic devices, including, for example, transistors and other components of integrated circuits, as well as components for use in a display, such as electroluminescent lamps and control circuitry.
- thermal transfer using light may, at least in some instances, provide for better registration when forming multiple devices over an area that is large compared to the device size.
- components of a display, which has many pixels can be formed using this method.
- multiple thermal transfer elements may be used to form a device or other object.
- the multiple thermal transfer elements may include thermal transfer elements with multicomponent transfer units and thermal transfer elements that transfer a single layer.
- a device or other object may be formed using one or more thermal transfer elements with multicomponent transfer units and one or more thermal transfer elements that transfer a single layer.
- the thermal transfer element 100 includes a donor substrate 102 , an optional primer layer 104 , a light-to-heat conversion (LTHC) layer 106 , an optional interlayer 108 , an optional release layer 112 , and a transfer layer 110 .
- a light-emitting source such as a laser or lamp
- the LTHC layer 106 contains a radiation absorber that converts light energy to heat energy. The conversion of the light energy to heat energy results in the transfer of a portion of the transfer layer 110 to a receptor (not shown).
- thermal transfer element 120 includes a donor substrate 122 , a LTHC layer 124 , an interlayer 126 , and a transfer layer 128 , as illustrated in FIG. 1B.
- Another suitable thermal transfer element 140 includes a donor substrate 142 , a LTHC layer 144 , and a transfer layer 146 , as illustrated in FIG. 1C.
- Yet another example of a thermal transfer element 160 includes a donor substrate 162 and a transfer layer 164 , as illustrated in FIG. 1D, with an optional radiation absorber disposed in the donor substrate 162 and/or transfer layer 164 to convert light energy to heat energy.
- the thermal transfer element 160 may be used without a radiation absorber for thermal transfer of the transfer layer 164 using a heating element, such as a resistive heating element, that contacts the thermal transfer element to selectively heat the thermal transfer element and transfer the transfer layer according to a pattern.
- a thermal transfer element 160 without radiation absorber may optionally include a release layer, an interlayer, and/or other layers (e.g., a coating to prevent sticking of the resistive heating element) used in the art.
- Suitable lasers include, for example, high power ( ⁇ 100 mW) single mode laser diodes, fiber-coupled laser diodes, and diode-pumped solid state lasers (e.g., Nd:YAG and Nd:YLF).
- Laser exposure dwell times can be in the range from, for example, about 0.1 to 100 microseconds and laser fluences can be in the range from, for example, about 0.01 to about 1 J/cm 2 .
- a laser is particularly useful as the radiation source.
- Laser sources are compatible with both large rigid substrates such as 1 m ⁇ 1 m ⁇ 1.1 mm glass, and continuous or sheeted film substrates, such as 100 ⁇ m polyimide sheets.
- Resistive thermal print heads or arrays may be used, for example, with simplified donor film constructions lacking a LTHC layer and radiation absorber. This may be particularly useful with smaller substrate sizes (e.g., less than approximately 30 cm in any dimension) or for larger patterns, such as those required for alphanumeric segmented displays.
- the donor substrate can be a polymer film.
- One suitable type of polymer film is a polyester film, for example, polyethylene terephthalate or polyethylene naphthalate films.
- other films with sufficient optical properties if light is used for heating and transfer), including high transmission of light at a particular wavelength, as well as sufficient mechanical and thermal stability for the particular application, can be used.
- the donor substrate in at least some instances, is flat so that uniform coatings can be formed.
- the donor substrate is also typically selected from materials that remain stable despite heating of the LTHC layer.
- the typical thickness of the donor substrate ranges from 0.025 to 0.15 mm, preferably 0.05 to 0.1 mm, although thicker or thinner donor substrates may be used.
- the materials used to form the donor substrate and the LTHC layer are selected to improve adhesion between the LTHC layer and the donor substrate.
- An optional prirning layer can be used to increase uniformity during the coating of subsequent layers and also increase the interlayer bonding strength between the LTHC layer and the donor substrate.
- a suitable substrate with primer layer is available from Teijin Ltd. (Product No. HPE100, Osaka, Japan).
- a light-to-heat conversion (LTHC) layer is typically incorporated within the thermal transfer element to couple the energy of light radiated from a light-emitting source into the thermal transfer element.
- the LTHC layer preferably includes a radiation absorber that absorbs incident radiation (e.g., laser light) and converts at least a portion of the incident radiation into heat to enable transfer of the transfer layer from the thermal transfer element to the receptor.
- incident radiation e.g., laser light
- the radiation absorber is disposed in another layer of the thermal transfer element, such as the donor substrate or the transfer layer.
- the thermal transfer element includes an LTHC layer and also includes additional radiation absorber(s) disposed in one or more of the other layers of the thermal transfer element, such as, for example, the donor substrate or the transfer layer.
- the thermal transfer element does not include an LTHC layer or radiation absorber and the transfer layer is transferred using a heating element that contacts the thermal transfer element.
- the radiation absorber in the LTHC layer absorbs light in the infrared, visible, and/or ultraviolet regions of the electromagnetic spectrum.
- the radiation absorber is typically highly absorptive of the selected imaging radiation, providing an optical density at the wavelength of the imaging radiation in the range of 0.2 to 3, and preferably from 0.5 to 2.
- Suitable radiation absorbing materials can include, for example, dyes (e.g., visible dyes, ultraviolet dyes, infrared dyes, fluorescent dyes, and radiation-polarizing dyes), pigments, metals, metal compounds, metal films, and other suitable absorbing materials.
- suitable radiation absorbers can include carbon black, metal oxides, and metal sulfides.
- a suitable LTHC layer can include a pigment, such as carbon black, and a binder, such as an organic polymer.
- a binder such as an organic polymer.
- Another suitable LTHC layer can include metal or metal/metal oxide formed as a thin film, for example, black aluminum (i.e., a partially oxidized aluminum having a black visual appearance).
- Metallic and metal compound films may be formed by techniques, such as, for example, sputtering and evaporative deposition. Particulate coatings may be formed using a binder and any suitable dry or wet coating techniques.
- Dyes suitable for use as radiation absorbers in a LTHC layer may be present in particulate form, dissolved in a binder material, or at least partially dispersed in a binder material. When dispersed particulate radiation absorbers are used, the particle size can be, at least in some instances, about 10 ⁇ m or less, and may be about 1 ⁇ m or less.
- Suitable dyes include those dyes that absorb in the IR region of the spectrum. Examples of such dyes may be found in Matsuoka, M., “Infrared Absorbing Materials”, Plenum Press, New York, 1990; Matsuoka, M., Absorption Spectra of Dyes for Diode Lasers, Bunshin Publishing Co., Tokyo, 1990, U.S. Pat.
- IR absorbers marketed by Glendale Protective Technologies, Inc., Lakeland, Fla., under the designation CYASORB IR-99, IR-126 and IR-165 may also be used.
- a specific dye may be chosen based on factors such as, solubility in, and compatibility with, a specific binder and/or coating solvent, as well as the wavelength range of absorption.
- Pigmentary materials may also be used in the LTHC layer as radiation absorbers.
- suitable pigments include carbon black and graphite, as well as phthalocyanines, nickel dithiolenes, and other pigments described in U.S. Pat. Nos. 5,166,024 and 5,351,617, incorporated herein by reference.
- black azo pigments based on copper or chromium complexes of, for example, pyrazolone yellow, dianisidine red, and nickel azo yellow can be useful.
- Inorganic pigments can also be used, including, for example, oxides and sulfides of metals such as aluminum, bismuth, tin, indium, zinc, titanium, chromium, molybdenum, tungsten, cobalt, iridium, nickel, palladium, platinum, copper, silver, gold, zirconium, iron, lead, and tellurium.
- metals such as aluminum, bismuth, tin, indium, zinc, titanium, chromium, molybdenum, tungsten, cobalt, iridium, nickel, palladium, platinum, copper, silver, gold, zirconium, iron, lead, and tellurium.
- Metal borides, carbides, nitrides, carbonitrides, bronze-structured oxides, and oxides structurally related to the bronze family e.g., WO 2.9 .
- Metal radiation absorbers may be used, either in the form of particles, as described for instance in U.S. Pat. No. 4,252,671, incorporated herein by reference, or as films, as disclosed in U.S. Pat. No. 5,256,506, incorporated herein by reference.
- Suitable metals include, for example, aluminum, bismuth, tin, indium, tellurium and zinc.
- a particulate radiation absorber may be disposed in a binder.
- the weight percent of the radiation absorber in the coating is generally from 1 wt. % to 30 wt. %, preferably from 3 wt. % to 20 wt. %, and most preferably from 5 wt. % to 15 wt. %, depending on the particular radiation absorber(s) and binder(s) used in the LTHC.
- Suitable binders for use in the LTHC layer include film-forming polymers, such as, for example, phenolic resins (e.g., novolak and resole resins), polyvinyl butyral resins, polyvinyl acetates, polyvinyl acetals, polyvinylidene chlorides, polyacrylates, cellulosic ethers and esters, nitrocelluloses, and polycarbonates.
- Suitable binders may include monomers, oligomers, or polymers that have been or can be polymerized or crosslinked.
- the binder is primarily formed using a coating of crosslinkable monomers and/or oligomers with optional polymer.
- the binder includes 1 to 50 wt. %, preferably, 10 to 45 wt. %, polymer (excluding the solvent when calculating wt. %).
- the monomers, oligomers, and polymers are crosslinked to form the LTHC.
- the LTHC layer may be damaged by the heat and/or permit the transfer of a portion of the LTHC layer to the receptor with the transfer layer.
- thermoplastic resin e.g., polymer
- the binder includes 25 to 50 wt. % (excluding the solvent when calculating weight percent) thermoplastic resin, and, preferably, 30 to 45 wt. % thermoplastic resin, although lower amounts of thermoplastic resin may be used (e.g., 1 to 15 wt. %).
- the thermoplastic resin is typically chosen to be compatible (i.e., form a one-phase combination) with the other materials of the binder.
- thermoplastic resin that has a solubility parameter in the range of 9 to 13 (cal/cm 3 ) 1 ⁇ 2 , preferably, 9.5 to 12 (cal/cm 3 ) 1 ⁇ 2 , is chosen for the binder.
- suitable thermoplastic resins include polyacrylics, styrene-acrylic polymers and resins, and polyvinyl butyral.
- the LTHC layer may be coated onto the donor substrate using a variety of coating methods known in the art.
- a polymeric or organic LTHC layer is coated, in at least some instances, to a thickness of 0.05 ⁇ m to 20 ⁇ m, preferably, 0.5 ⁇ m to 10 ⁇ m, and, most preferably, 1 ⁇ m to 7 ⁇ m.
- An inorganic LTHC layer is coated, in at least some instances, to a thickness in the range of 0.001 to 10 ⁇ m, and preferably, 0.002 to 1 ⁇ m.
- This LTHC layer can be used in a variety of thermal transfer elements, including thermal transfer elements that have a multicomponent transfer unit and thermal transfer elements that are used to transfer a single layer of a device or other item.
- the LTHC layer can be used with thermal transfer elements that are useful in forming multilayer devices, as described above, as well as thermal transfer elements that are useful for forming other items. Examples include such items as color filters, spacer layers, black matrix layers, printed circuit boards, displays (for example, liquid crystal and emissive displays), polarizers, z-axis conductors, and other items that can be formed by thermal transfer including, for example, those described in U.S. Pat. Nos.
- An optional interlayer may be used to minimize damage and contamination of the transferred portion of the transfer layer and may also reduce distortion in the transferred portion of the transfer layer.
- the interlayer may also influence the adhesion of the transfer layer to the rest of the thermal transfer element.
- the interlayer has high thermal resistance.
- the interlayer does not distort or chemically decompose under the imaging conditions, particularly to an extent that renders the transferred image non-functional.
- the interlayer typically remains in contact with the LTHC layer during the transfer process and is not substantially transferred with the transfer layer.
- Suitable interlayers include, for example, polymer films, metal layers (e.g., vapor deposited metal layers), inorganic layers (e.g., sol-gel deposited layers and vapor deposited layers of inorganic oxides (e.g., silica, titania, and other metal oxides)), and organic/inorganic composite layers.
- Organic materials suitable as interlayer materials include both thermoset and thermoplastic materials.
- Suitable thermoset materials include resins that may be crosslinked by heat, radiation, or chemical treatment including, but not limited to, crosslinked or crosslinkable polyacrylates, polymethacrylates, polyesters, epoxies, and polyurethanes.
- the thermoset materials may be coated onto the LTHC layer as, for example, thermoplastic precursors and subsequently crosslinked to form a crosslinked interlayer.
- Suitable thermoplastic materials include, for example, polyacrylates, polymethacrylates, polystyrenes, polyurethanes, polysulfones, polyesters, and polyimides. These thermoplastic organic materials may be applied via conventional coating techniques (for example, solvent coating, spray coating, or extrusion coating).
- the glass transition temperature (Tg) of thermoplastic materials suitable for use in the interlayer is 25° C. or greater, preferably 50° C. or greater, more preferably 100° C. or greater, and, most preferably, 150° C. or greater.
- the interlayer may be either transmissive, absorbing, reflective, or some combination thereof, at the imaging radiation wavelength.
- Inorganic materials suitable as interlayer materials include, for example, metals, metal oxides, metal sulfides, and inorganic carbon coatings, including those materials that are highly transmissive or reflective at the imaging light wavelength. These materials may be applied to the light-to-heat-conversion layer via conventional techniques (e.g., vacuum sputtering, vacuum evaporation, or plasma jet deposition).
- the interlayer may provide a number of benefits.
- the interlayer may be a barrier against the transfer of material from the light-to-heat conversion layer. It may also modulate the temperature attained in the transfer layer so that thermally unstable materials can be transferred.
- the presence of an interlayer may also result in improved plastic memory in the transferred material.
- the interlayer may contain additives, including, for example, photoinitiators, surfactants, pigments, plasticizers, and coating aids.
- the thickness of the interlayer may depend on factors such as, for example, the material of the interlayer, the material of the LTHC layer, the material of the transfer layer, the wavelength of the imaging radiation, and the duration of exposure of the thermal transfer element to imaging radiation.
- the thickness of the interlayer typically is in the range of 0.05 ⁇ m to 10 ⁇ m, preferably, from about 0.1 ⁇ m to 4 , ⁇ m, more preferably, 0.5 to 3 ⁇ m, and, most preferably, 0.8 to 2 ⁇ m.
- the thickness of the interlayer typically is in the range of 0.005 ⁇ m to 10 ⁇ m, preferably, from about 0.01 ⁇ m to 3 ⁇ m, and, more preferably, from about 0.02 to 1 ⁇ m.
- the optional release layer typically facilitates release of the transfer layer from the rest of the thermal transfer element (e.g., the interlayer and/or the LTHC layer) upon heating of the thermal transfer element, for example, by a light-emitting source or a heating element.
- the release layer provides some adhesion of the transfer layer to the rest of the thermal transfer element prior to exposure to heat.
- Suitable release layers include, for example, conducting and non-conducting thermoplastic polymers, conducting and non-conducting filled polymers, and/or conducting and non-conducting dispersions.
- suitable polymers include acrylic polymers, polyanilines, polythiophenes, poly(phenylenevinylenes), polyacetylenes, and other conductive organic materials, such as those listed in Handbook of Conductive Molecules and Polymers, Vols. 1-4, H. S. Nalwa, ed., John Wiley and Sons, Chichester (1997), incorporated herein by reference.
- suitable conductive dispersions include inks containing carbon black, graphite, ultrafine particulate indium tin oxide, ultrafine antimony tin oxide, and commercially available materials from companies such as Nanophase Technologies Corporation (Burr Ridge, Ill.) and Metech (Elverson, Pa.).
- suitable materials for the release layer include sublimable insulating materials and sublimable semiconducting materials (such as phthalocyanines), including, for example, the materials described in U.S. Pat. No. 5,747,217, incorporated herein by reference.
- the release layer may be part of the transfer layer or a separate layer. All or a portion of the release layer may be transferred with the transfer layer. Alternatively, most or substantially all of the release layer remains with the donor substrate when the transfer layer is transferred. In some instances, for example, with a release layer including sublimable material, a portion of the release layer may be dissipated during the transfer process.
- the transfer layer typically includes one or more layers for transfer to a receptor. These one or more layers may be formed using organic, inorganic, organometallic, and other materials. Although the transfer layer is described and illustrated as having discrete layers, it will be appreciated that, at least in some instances, there may be an interfacial region that includes at least a portion of each layer. This may occur, for example, if there is mixing of the layers or diffusion of material between the layers before, during, or after transfer of the transfer layer. In other instances, two layers may be completely or partially mixed before, during, or after transfer of the transfer layer. In any case, these structures will be referred to as including more than one independent layer, particularly if different functions of the device are performed by the different regions.
- a transfer layer includes a multicomponent transfer unit that is used to form a multilayer device, such as an active or passive device, on a receptor.
- the transfer layer may include all of the layers needed for the active or passive device.
- one or more layers of the active or passive device may be provided on the receptor, the rest of the layers being included in the transfer layer.
- one or more layers of the active or passive device may be transferred onto the receptor after the transfer layer has been deposited.
- the transfer layer is used to form only a single layer of the active or passive device or a single or multiple layer of an item other than a device.
- One advantage of using a multicomponent transfer unit, particularly if the layers do not mix, is that the important interfacial characteristics of the layers in the multicomponent transfer unit can be produced when the thermal transfer unit is prepared and, preferably, retained during transfer. Individual transfer of layers may result in less optimal interfaces between layers.
- the multilayer device formed using the multicomponent transfer unit of the transfer layer may be, for example, an electronic or optical device.
- Examples of such devices include electronic circuitry, resistors, capacitors, diodes, rectifiers, electroluminescent lamps, memory elements, field effect transistors, bipolar transistors, unijunction transistors, MOS transistors, metal-insulator-semiconductor transistors, charge coupled devices, insulator-metal-insulator stacks, organic conductor-metal-organic conductor stacks, integrated circuits, photodetectors, lasers, lenses, waveguides, gratings, holographic elements, filters (e.g., add-drop filters, gain-flattening filters, cut-off filters, and the like), mirrors, splitters, couplers, combiners, modulators, sensors (e.g., evanescent sensors, phase modulation sensors, interferometric sensors, and the like), optical cavities, piezoelectric devices, ferroelectric devices, thin film batteries, or combinations thereof.
- Embodiments of the transfer layer include a multicomponent transfer unit that is used to form at least a portion of a passive or active device.
- the transfer layer includes a multicomponent transfer unit that is capable of forming at least two layers of a multilayer device. These two layers of the multilayer device often correspond to two layers of the transfer layer.
- one of the layers that is formed by transfer of the multicomponent transfer unit is an active layer (i.e., a layer that acts as a conducting, semiconducting, superconducting, waveguiding, frequency multiplying, light producing (e.g., luminescing, light emitting, fluorescing, or phosphorescing), electron producing, or hole producing layer in the device and/or as a layer that produces an optical or electronic gain in the device.)
- a second layer that is formed by transfer of the multicomponent transfer unit is another active layer or an operational layer (i.e., a layer that acts as an insulating, conducting, semiconducting, superconducting, waveguiding, frequency multiplying, light producing (e.g., fluorescing or phosphorescing), electron producing, hole producing, light absorbing, reflecting, diffracting, phase retarding, scattering, dispersing, or diffusing layer in the device and/or as a layer that produces an optical or electronic gain in the device.)
- the multicomponent transfer unit may also
- the transfer layer may include an adhesive layer disposed on an outer surface of the transfer layer to facilitate adhesion to the receptor.
- the adhesive layer may be an operational layer, for example, if the adhesive layer conducts electricity between the receptor and the other layers of the transfer layer, or a non-operational layer, for example, if the adhesive layer only adheres the transfer layer to the receptor.
- the adhesive layer may be formed using, for example, thermoplastic polymers, including conducting and non-conducting polymers, conducting and non-conducting filled polymers, and/or conducting and non-conducting dispersions.
- suitable polymers include acrylic polymers, polyanilines, polythiophenes, poly(phenylenevinylenes), polyacetylenes, and other conductive organic materials such as those listed in Handbook of Conductive Molecules and Polymers, Vols. 1-4, H. S. Nalwa, ed., John Wiley and Sons, Chichester (1997), incorporated herein by reference.
- suitable conductive dispersions include inks containing carbon black, graphite, ultrafine particulate indium tin oxide, ultrafine antimony tin oxide, and commercially available materials from companies such as Nanophase Technologies Corporation (Burr Ridge, Ill.) and Metech (Elverson, Pa.).
- the transfer layer may also include a release layer disposed on the surface of the transfer layer that is in contact with the rest of the thermal transfer element. As described above, this release layer may partially or completely transfer with the remainder of the transfer layer or substantially all of the release layer may remain with the thermal transfer element upon transfer of the transfer layer. Suitable release layers are described above.
- the transfer layer may be formed with discrete layers, it will be understood that, in at least some embodiments, the transfer layer may include layers that have multiple components and/or multiple uses in the device. It will also be understood that, at least in some embodiments, two or more discrete layers may be melted together during transfer or otherwise mixed or combined. In any case, these layers, although mixed or combined, will be referred to as individual layers.
- a transfer layer 170 illustrated in FIG. 2A, includes a conductive metal or metal compound layer 172 and a conductive polymer layer 174 for contact with a receptor (not shown).
- the conductive polymer layer 174 may also act, at least in part, as an adhesive layer to facilitate transfer to the receptor.
- a second example of a transfer layer 180 illustrated in FIG. 2B, includes a release layer 182 , followed by a conductive metal or metal compound layer 184 , and then a conductive or non-conductive polymer layer 186 for contact with a receptor (not shown).
- a third example of a transfer layer 190 illustrated in FIG.
- a fourth example of a transfer layer 195 illustrated in FIG. 2D, consists of a multilayer metal stack 196 of alternating metals 197 , 198 , such as gold-aluminum-gold, and a conductive or non-conductive polymer layer 199 for contact with a receptor.
- an OEL device includes a thin layer, or layers, of suitable organic materials sandwiched between a cathode and an anode. Electrons are injected into the organic layer(s) from the cathode and holes are injected into the organic layer(s) from the anode. As the injected charges migrate towards the oppositely charged electrodes, they may recombine to form electron-hole pairs which are typically referred to as excitons. These excitons, or excited state species, may emit energy in the form of light as they decay back to a ground state (see, for example, T. Tsutsui, MRS Bulletin, 22, 39-45 (1997), incorporated herein by reference).
- OEL device constructions include molecularly dispersed polymer devices where charge carrying and/or emitting species are dispersed in a polymer matrix (see J. Kido “Organic Electroluminescent devices Based on Polymeric Materials”, Trends in Polymer Science, 2, 350-355 (1994), incorporated herein by reference), conjugated polymer devices where layers of polymers such as polyphenylene vinylene act as the charge carrying and emitting species (see J. J. M. Halls et al., Thin Solid Films, 276, 13-20 (1996), herein incorporated by reference), vapor deposited small molecule heterostructure devices (see U.S. Pat. No. 5,061,569 and C. H.
- FIG. 3A One suitable example of a transfer layer 200 for forming an OEL device is illustrated in FIG. 3A.
- the transfer layer 200 includes an anode 202 , a hole transport layer 204 , an electron transport/emitter layer 206 , and a cathode 208 .
- either the cathode or anode can be provided separately on a receptor (e.g., as a conductive coating on the receptor) and not in the transfer layer.
- FIG. 3B for an anode-less transfer layer 200 ′ using primed reference numerals to indicate layers in common with the transfer layer 200 .
- the transfer layer 200 may also include one or more layers, such as a release layer 210 and/or an adhesive layer 212 , to facilitate the transfer of the transfer layer to the receptor.
- a release layer 210 and/or an adhesive layer 212 can be conductive polymers to facilitate electrical contact with a conductive layer or structure on the receptor or conductive layer(s) formed subsequently on the transfer layer. It will be understood that the positions of the release layer and adhesive layer could be switched with respect to the other layers of the transfer layer.
- the anode 202 and cathode 208 are typically formed using conducting materials such as metals, alloys, metallic compounds, metal oxides, conductive ceramics, conductive dispersions, and conductive polymers, including, for example, gold, platinum, palladium, aluminum, titanium, titanium nitride, indium tin oxide (ITO), fluorine tin oxide (FTO), and polyaniline.
- the anode 202 and the cathode 208 can be single layers of conducting materials or they can include multiple layers.
- an anode or a cathode may include a layer of aluminum and a layer of gold or a layer of aluminum and a layer of lithium fluoride.
- the hole transport layer 204 facilitates the injection of holes into the device and their migration towards the cathode 208 .
- the hole transport layer 204 further acts as a barrier for the passage of electrons to the anode 202 .
- the hole transport layer 204 can include, for example, a diamine derivative, such as N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine (also known as TPD).
- the electron transport/emitter layer 206 facilitates the injection of electrons and their migration towards the anode 202 .
- the electron transport/emitter layer 206 further acts as a barrier for the passage of holes to the cathode 208 .
- the electron transport/emitter layer 206 is often formed from a metal chelate compound, such as, for example, tris(8-hydroxyquinoline) aluminum (ALQ).
- the interface between the hole transport layer 204 and electron transport/emitter layer 206 forms a barrier for the passage of holes and electrons and thereby creates a hole/electron recombination zone and provides an efficient organic electroluminescent device.
- the emitter material is ALQ
- the OEL device emits blue-green light.
- the emission of light of different colors may be achieved by the use of different emitters and dopants in the electron transport/emitter layer 206 (see C. H. Chen et al., “Recent Developments in Molecular Organic Electroluminescent Materials”, Macromolecular Symposia, 125, 1-48 (1997), herein incorporated by reference).
- OEL multilayer device constructions may be transferred using different transfer layers.
- the hole transporting layer 204 in FIG. 3A could also be an emitter layer and/or the hole transporting layer 204 and the electron transporting/emitter layer 206 could be combined into one layer.
- a separate emitter layer could be interposed between layers 204 and 206 in FIG. 3A
- the multilayer unit can be transferred onto a receptor to form OEL devices.
- an optical display can be formed as illustrated in FIGS. 4A through 4C.
- green OEL devices 302 can be transferred onto the receptor substrate 300 , as shown in FIG. 4A.
- blue OEL devices 304 and then red OEL devices 306 may be transferred, as shown in FIGS.
- Each of the green, blue, and red OEL devices 302 , 304 , 306 are transferred separately using green, blue, and red thermal transfer elements, respectively.
- the red, green, and blue thermal transfer elements could be transferred on top of one another to create a multi-color stacked OLED device of the type disclosed in U.S. Pat. No. 5,707,745, herein incorporated by reference.
- Another method for forming a full color device includes depositing columns of hole transport layer material and then sequentially depositing red, green, and blue electron transport layer/emitter multicomponent transfer units either parallel or perpendicular to the hole transport material.
- Yet another method for forming a full color device includes depositing red, green, and blue color filters (either conventional transmissive filters, fluorescent filters, or phosphors) and then depositing multicomponent transfer units corresponding to white light or blue light emitters.
- the OEL device is typically coupled to a driver (not shown) and sealed to prevent damage.
- the thermal transfer element can be a small or a relatively large sheet coated with the appropriate transfer layer.
- the use of laser light or other similar light-emitting sources for transferring these devices permits the formation of narrow lines and other shapes from the thermal transfer element.
- a laser or other light source could be used to produce a pattern of the transfer layer on the receptor, including receptors that may be meters in length and width.
- This example illustrates advantages of using the thermal transfer elements. For example, the number of processing steps can be reduced as compared to conventional photolithography methods because many of the layers of each OEL device are transferred simultaneously, rather than using multiple etching and masking steps. In addition, multiple devices and patterns can be created using the same imaging hardware. Only the thermal transfer element needs to be changed for each of the different devices 302 , 304 , 306 .
- a field effect transistor can be formed using one or more thermal transfer elements.
- thermal transfer elements One example of an organic field effect transistor that could be formed using thermal transfer elements is described in Garnier, et al., Adv. Mater. 2, 592-594 (1990), incorporated herein by reference.
- Field effect transistors are, in general, three terminal electronic devices capable of modulating the current flow between two terminals (source and drain) 5 with the application of an electric field at the remaining terminal (gate) (see, for example, S. M. Sze, Physics of Semiconductor Devices, 2 nd Ed. Wiley, New York, 431-435 (1981), incorporated herein by reference).
- a field effect transistor consists of a rectangular slab of semiconducting material bounded on opposite ends with two electrodes—the source and drain electrodes. On one of the other surfaces an insulating layer (gate dielectric) and subsequent electrode (gate electrode) are formed. An electric field is applied between the gate electrode and the semiconductor slab. The conductivity, and therefore current flow, between the source and drain electrodes is controlled by the polarity and strength of the gate-insulator-semiconductor field.
- Field effect transistors can be assembled with a gate electrode/semiconductor rectifying region.
- the conductivity between the source and drain electrodes is modulated by varying the polarity and strength of the gate/semiconductor field which controls the depletion region at the gate/semiconductor interface.
- This type of construction is typically referred to as a MESFET or JFET, metal semiconductor FET or Junction FET respectively (see, for example, S. M. Sze, Physics of Semiconductor Devices, 2 nd Ed. Wiley, New York, 312-324 (1981), incorporated herein by reference).
- Material selection for the metal electrodes, gate dielectric and semiconductor may be influenced several parameters including conductivity, reliability, electron affinity, fermi level, processing compatibility, device application, and cost. For example, in general, it is advantageous to select a metal with a low work function to form an electrical contact with an n-type (electron conducting) semiconductor.
- FIGS. 4A to 4 D and 5 A to 5 D An example of the formation of a field effect transistor is illustrated in FIGS. 4A to 4 D and 5 A to 5 D.
- the field effect transistor is formed on a receptor substrate 500 upon which electrical contacts 502 , 504 , 506 , 508 have been formed, as illustrated in FIGS. 4A and 5A.
- the receptor substrate 500 is typically formed from a non-conducting material, such as glass or a non-conducting plastic or the receptor substrate 500 is covered with a non-conductive coating.
- the electrical contacts 502 , 504 , 506 , 508 can be formed using a metal or a metallic compound, such as gold, silver, copper, or indium tin oxide.
- the electrical contacts 502 , 504 , 506 , 508 can also be formed using a conducting organic material such as polyaniline.
- the electrical contacts 502 , 504 , 506 , 508 can be formed by a variety of techniques including photolithography or thermal transfer utilizing a thermal transfer element with a transfer layer of the particular metal, metallic compound, or conducting organic material.
- a gate electrode 510 is formed between two opposing electrodes 502 , 506 , as illustrated in FIGS. 4 B and SB.
- the gate electrode 510 can be formed using a first thermal transfer element with a transfer layer including the material chosen for the gate electrode.
- Suitable materials for the gate electrode include metals, metallic compounds, conducting polymers, filled polymers, and conducting inks. Examples of materials for the gate electrode include gold, silver, platinum, carbon, indium tin oxide, polyaniline, and carbon black filled polymers.
- a gate insulating layer 512 and a semiconductor layer 514 are formed over the gate electrode 510 , as shown in FIGS. 4C and 5C. These two layers 512 , 514 can be formed using a second thermal transfer element that includes, for example, a multicomponent transfer unit with an insulating layer and a semiconductor layer.
- the gate insulating layer 512 can be formed using organic or inorganic insulators, such as silicon dioxide, silicon nitride, tantalum oxide, other inorganic oxides, polyimides, polyamic acids, acrylics, cyanoethylpullulan, and magnesium fluoride.
- the organic polymers used as gate insulating layers may be filled with an insulating material such as ultrafine silica particles.
- the semiconductor layer 514 can be formed using organic and inorganic semiconductors, such as polythiophenes, oligomeric thiophenes, polyphenylvinylenes, polyacetylenes, metallophthalocyanines, and amorphous and polycrystalline silicon and germanium.
- organic and inorganic semiconductors such as polythiophenes, oligomeric thiophenes, polyphenylvinylenes, polyacetylenes, metallophthalocyanines, and amorphous and polycrystalline silicon and germanium.
- source and drain contacts 516 , 518 can be formed using conductive material, such as a metal, metallic compound, conducting polymer, conducting ink, or conducting organic material as described above to make two spaced apart connections between the spuriconducting layer 514 and opposing electrical contacts 504 , 508 , respectively, as shown in FIGS. 4D and 5D.
- the region 520 between the source and drain contacts 516 , 518 forms a channel of the field effect transistor.
- the source and drain contacts 516 , 518 can be formed using a third thermal transfer layer including a transfer layer with a layer of the appropriate conductive material. It will be recognized that in many field effect transistors, the identity of the source and drain can be interchanged from the device illustrated in FIG. 4D and 5D.
- An OEL device 600 and field effect transistor 610 can be combined, for example, where one of the electrical contacts of the transistor is also the anode or cathode 620 of the OEL device, as shown in FIG. 7. This combination allows the field effect transistor to control the operation of the OEL device.
- a display unit with this combination can be made using, for example, three or more thermal transfer elements to form the field effect transistor and at least one additional thermal transfer element to form the OEL device, as described above.
- Optical waveguides typically include a core of material that is substantially transparent to light of the wavelength of interest.
- the core is covered by a cladding material that is also is substantially transparent to the light of the wavelength of interest.
- the light is transmitted through, and substantially confined in, the core of the waveguide by total internal reflectance caused by the difference in the index of refraction between the core and the cladding.
- the index of refraction of the core is slightly greater than the index of refraction of the cladding.
- the performance of a waveguide is influenced by many factors such as, for example, the shape, length, and transparency of the waveguide and the difference in refractive index between the core and the cladding.
- a difference in refractive index between the core and the cladding of 0.002 to 0.5 is desirable.
- Core and cladding materials that are useful in forming waveguides include glass and organic polymers.
- optical waveguides are manufactured by a variety of methods, such as photolithography, diffusion, and ion implantation processes.
- a conventional waveguide can be manufactured by applying a suitable optical material onto a substrate, typically in a sandwich form, resulting in a core region surrounded by a cladding region.
- a photoresist material is then applied onto the sandwich and patterned by a photolithographic process.
- the pattern defined by the photolithographic process is then transferred to the waveguide sandwich by an etching process.
- the substrate with the etched pattern is then cleaned, which removes the remaining photoresist and leaves the resultant waveguide on the substrate.
- An optical waveguide can be formed using one or more thermal transfer elements.
- thermal transfer using thermal transfer element 100 in FIG. 1A wherein transfer layer 110 comprises three layers of polymers of suitable indices of refraction could be used to form a waveguide on a receptor substrate. Since it forms the core of the waveguide, the central polymer layer of the transfer layer typically has an index of refraction slightly greater than the outer two layers.
- core/cladding combinations include, but are not limited to, polyetherimide/benzocyclobutene, polycarbonate/fluorinated acrylic, polycarbonate/polymethylmethacrylate and fluorinated polyimide/polymethylmethacrylate.
- Thermal transfer of portions of an optical waveguide using a thermal transfer element may also be utilized to form an optical waveguide.
- a receptor substrate could be coated with a cladding polymer such as polymethylmethacrylate by conventional methods or by a separate thermal transfer element and thermal transfer step. Subsequent thermal transfer of a polymethylmethacrylate/polycarbonate bilayer to the receptor substrate forms a waveguide having a polycarbonate core and polymethylmethacrylate cladding.
- the receptor substrate may be any item suitable for a particular application including, but not limited to, transparent films, display black matrices, passive and active portions of electronic displays, metals, semiconductors, glass, various papers, and plastics.
- Non-limiting examples of receptor substrates which can be used in the present invention include anodized aluminum and other metals, plastic films (e.g., polyethylene terephthalate, polypropylene), indium tin oxide coated plastic films, glass, indium tin oxide coated glass, flexible circuitry, circuit boards, silicon or other semiconductors, and a variety of different types of paper (e.g., filled or unfilled, calendered, or coated).
- an adhesive layer may be coated onto the receptor substrate to facilitate transfer of the transfer layer to the receptor substrate.
- Other layers may be coated on the receptor substrate to form a portion of a multilayer device.
- an OEL or other electronic device may be formed using a receptor substrate having a metal anode or cathode formed on the receptor substrate prior to transfer of the transfer layer from the thermal transfer element. This metal anode or cathode may be formed, for example, by deposition of a conductive layer on the receptor substrate and patterning of the layer into one or more anodes or cathodes using, for example, photolithographic techniques.
- the thermal transfer element is typically brought into intimate contact with a receptor.
- pressure or vacuum are used to hold the thermal transfer element in intimate contact with the receptor.
- a radiation source is then used to heat the LTHC layer (and/or other layer(s) containing radiation absorber) in an imagewise fashion (e.g., digitally or by analog exposure through a mask) to perform imagewise transfer of the transfer layer from the thermal transfer element to the receptor according to a pattern.
- a heating element such as a resistive heating element, may be used to transfer the multicomponent transfer unit.
- the thermal transfer element is selectively contacted with the heating element to cause thermal transfer of a portion of the transfer layer according to a pattern.
- the thermal transfer element may include a layer that can convert an electrical current applied to the layer into heat.
- the transfer layer is transferred to the receptor without transferring any of the other layers of the thermal transfer element, such as the optional interlayer and the LTHC layer.
- the presence of the optional interlayer may eliminate or reduce the transfer of the LTHC layer to the receptor and/or reduce distortion in the transferred portion of the transfer layer.
- the adhesion of the interlayer to the LTHC layer is greater than the adhesion of the interlayer to the transfer layer.
- a reflective interlayer can be used to attenuate the level of imaging radiation transmitted through the interlayer and reduce any damage to the transferred portion of the transfer layer that may result from interaction of the transmitted radiation with the transfer layer and/or the receptor. This is particularly beneficial in reducing thermal damage which may occur when the receptor is highly absorptive of the imaging radiation.
- Thermal transfer elements can be used, including thermal transfer elements that have length and width dimensions of a meter or more.
- a laser can be rastered or otherwise moved across the large thermal transfer element, the laser being selectively operated to illuminate portions of the thermal transfer element according to a desired pattern.
- the laser may be stationary and the thermal transfer element moved beneath the laser.
- thermal transfer element may be used to form a gate electrode of a field effect transistor and another thermal transfer element may be used to form the gate insulating layer and semiconducting layer, and yet another thermal transfer layer may be used to form the source and drain contacts.
- a variety of other combinations of two or more thermal transfer elements can be used to form a device, each thermal transfer element forming one or more layers of the device.
- Each of these thermal transfer elements may include a multicomponent transfer unit or may only include a single layer for transfer to the receptor. The two or more thermal transfer units are then sequentially used to deposit one or more layers of the device.
- at least one of the two or more thermal transfer elements includes a multicomponent transfer unit.
- the laser transfer system included a CW Nd:YAG laser, acousto-optic modulator, collimating and beam expanding optics, an optical isolator, a linear galvonometer and an f-theta scan lens.
- the Nd:YAG laser was operating in the TEM 00 mode, and produced a total power of 7.5 Watts. Scanning was accomplished with a high precision linear galvanometer (Cambridge Technology Inc., Cambridge, Mass.).
- the laser was focused to a Gaussian spot with a measured diameter of 140 ⁇ m at the 1/e 2 intensity level.
- the spot was held constant across the scan width by utilizing an f-theta scan lens.
- the laser spot was scanned across the image surface at a velocity of 5.6 meters/second.
- the f-theta scan lens held the scan velocity uniform to within 0.1%, and the spot size constant to within +3 microns.
- a carbon black light-to-heat conversion layer was prepared by coating the following LTHC Coating Solution, according to Table 1, onto a 0.1 mm PET substrate with a Yasui Seiki Lab Coater, Model CAG-150 (Yasui Seiki Co., Bloomington, Ind.) using a microgravure roll of 381 helical cells per lineal cm (150 helical cells per lineal inch).
- LTHC Coating Solution Parts by Component Weight Raven TM 760 Ultra carbon black pigment (available 3.39 from Columbian Chemicals, Atlanta, GA) Butvar TM B-98 (polyvinylbutyral resin, available from 0.61 Monsanto, St.
- Joncryl TM 67 (acrylic resin, available from S.C. 1.81 Johnson & Son, Racine, WI)
- Elvacite TM 2669 (acrylic resin, available from ICI 9.42 Acrylics, Wilmington, DE)
- Disperbyk TM 161 (dispersing aid, available from Byk 0.3 Chemie, Wallingford, CT)
- FC-430 TM fluorochemical surfactant, available from 0.012 3M, St. Paul, MN
- Ebecryl TM 629 (epoxy novolac acrylate, available from 14.13 UCB Radcure, N.
- Irgacure TM 369 photocuring agent, available from Ciba 0.95 Specialty Chemicals, Tarrytown, NY
- Irgacure TM 184 photocuring agent, available from Ciba 0.14 Specialty Chemicals, Tarrytown, NY
- propylene glycol methyl ether acetate 16.78 1-methoxy-2-propanol 9.8 methyl ethyl ketone 42.66
- the coating was in-line dried at 40° C. and UV-cured at 6.1 m/min using a Fusion Systems Model 1600 (400 W/in) UV curing system fitted with H-bulbs (Fusion UV Systems, Inc., Gaithersburg, Md.).
- the dried coating had a thickness of approximately 3 microns.
- a carbon black light-to-heat conversion layer was prepared by coating the following LTHC Coating Solution, according to Table 3, onto a 0.1 mm PET substrate with a Yasui Seiki Lab Coater, Model CAG-150 (Yasui Seiki Co., Bloomington, Ind.) using a microgravure roll of 228.6 helical cells per lineal cm (90 helical cells per lineal inch).
- the coating was in-line dried at 40° C. and UV-cured at 6.1 m/min using a Fusion Systems Model 1600 (400 W/in) UV curing system fitted with H-bulbs.
- the dried coating had a thickness of approximately 3 microns.
- a thermal donor element with a multicomponent transfer layer was prepared by applying coatings to the substrate/LTHC/interlayer element of Example 2.
- a coating of acrylic polymer (ElvaciteTM 2776, ICI Acrylics, Wilmington, Del.) was applied to the interlayer of the thermal transfer element using a 5 wt. % aqueous solution of polymer with a #6 Mayer bar. The coating was dried at about 60° C. for about 5 minutes. A 500 ⁇ coating of gold was then vacuum deposited over the acrylic polymer.
- Another coating of acrylic polymer (Elvacitem 2776, ICI Acrylics) was coated over the gold layer by applying a 5 wt. % aqueous solution of polymer with a #6 Mayer bar.
- the coating was dried at about 60° C. for about 5 minutes.
- the sample was imaged onto a glass receptor using a linear scan speed of 5.6 m/s.
- the result was a uniform transfer of the polymer/gold/polymer transfer layer as 70 micron wide lines with excellent edge uniformity.
- a thermal donor element with a multicomponent transfer layer was prepared by applying coatings to the substrate/LTHC/interlayer element of Example 2.
- a coating of acrylic polymer (ElvaciteTM 2776, ICI Acrylics) was applied to the interlayer of the thermal transfer element using a 5 wt. % aqueous solution of polymer with a #6 Mayer bar. The coating was dried at about 60° C. for about 5 minutes.
- a 500 ⁇ coating of tin was vacuum deposited on top of the acrylic polymer.
- a 500 ⁇ coating of gold was then vacuum deposited on the tin. Then, a second 500 ⁇ coating of tin was vacuum deposited on the gold.
- a second coating of acrylic polymer (ElvaciteTM 2776, ICI Acrylics) was prepared by applying a 5 wt. % aqueous solution of polymer with a #6 Mayer bar. The coating was dried at about 60° C. for about 5 minutes. The thermal transfer element was imaged onto a glass receptor using a linear scan speed of 5.6 m/s. The result was a uniform transfer of a polymer/tin/gold/tin/polymer film as 70 micron wide lines with excellent edge uniformity.
- a hole transport thermal transfer element was formed using the substrate/LTHC/interlayer element of Example 1.
- a hole transport coating solution formed by mixing the components of Table 5, was coated onto the interlayer using a #6 Mayer bar. The coating was dried for 10 min at 60° C.
- TABLE 5 Hole Transport Coating Solution Weight Component (g) N,N′-bis(3-methylphenyl)-N,N′- 2.5 diphenylbenzidine polyvinylcarbazole 2.5 cyclohexanone 97.5 propylene glycol methyl ether acetate 97.5 (PGMEA)
- An OEL thermal transfer element with a multicomponent transfer layer was prepared by applying coatings to a substrate/LTHC/interlayer element formed according to Example 1.
- a 200 ⁇ layer of copper phthalocyanine was deposited on the interlayer as a semiconducting release layer.
- a 250 ⁇ layer of aluminum was deposited as a cathode layer.
- a 10 ⁇ layer of lithium fluoride was deposited on the aluminum.
- a 300 ⁇ layer of tris(8-hydroxyquinolinato) aluminum (ALQ) was deposited as an electron transport layer.
- a 200 ⁇ layer of N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD) was deposited as a hole transport layer.
- the transfer layer side of the thermal transfer element was held in intimate contact with the receptor in a vacuum chuck.
- a laser was directed to be incident upon the substrate side of the thermal transfer elements.
- the exposures were performed so that the two transfer layers were transferred with correct registration. This produced 120 ⁇ m wide lines.
- the final OEL device had layers in the following order (from top to bottom):
- TPD Hole Transport Layer (from OEL thermal transfer element)
- An OEL thermal transfer element with a multicomponent transfer layer was prepared by applying coatings to a substrate/LTHC/interlayer element prepared according to Example 1.
- a primer solution A, according to Table 6, was first coated using a #3 Mayer bar. The coating was dried at about 60° C. for about 5 minutes.
- the receptor substrate consisted of a piece of 4 mil (about 100 ⁇ m) polyethyleneterephthalate (PET) film (unprimed HPE100,Teijin Ltd., Osaka, Japan).
- PET polyethyleneterephthalate
- the transfer layer side of the thermal transfer element was held in intimate contact with the receptor in a vacuum chuck.
- a laser was directed to be incident upon the substrate side of the thermal transfer elements.
- the exposures were performed so that the two layers with correct registration. This produced 120 ⁇ m wide lines.
- the final construction had layers in the following order (from top to bottom):
Abstract
A thermal transfer element for forming a multilayer device may include a substrate and a multicomponent transfer unit that, when transferred to a receptor, is configured and arranged to form a first operational layer and a second operational layer of a multilayer device. In at least some instances, the thermal transfer element also includes a light-to-heat conversion (LTHC) layer that can convert light energy to heat energy to transfer the multicomponent transfer unit. Transferring the multicomponent transfer unit to the receptor may include contacting a receptor with a thermal transfer element having a substrate and a multicomponent transfer unit. Then, the thermal transfer element is selectively heated to transfer the multicomponent transfer unit to the receptor according to a pattern to form at least first and second operational layers of a device. Often, when the thermal transfer element includes a LTHC layer between the substrate and the transfer layer, the thermal transfer element can be illuminated with light according to the pattern and the light energy is converted to heat energy to selectively heat the thermal transfer element.
Description
- This application is a divisional of U.S. patent application Ser. No. 09/546,414, filed Apr. 10, 2000, which is a divisional of U.S. patent application Ser. No. 09/231,723, filed Jan. 15, 1999, now U.S. Pat. No. 6,114,088.
- This invention relates to thermal transfer elements and methods of transferring layers to form devices on a receptor. In particular, the invention relates to a thermal transfer element having a multicomponent transfer unit and methods of using the thermal transfer element for forming a device, such as an optical or electronic device, on a receptor.
- Many miniature electronic and optical devices are formed using layers of different materials stacked on each other. These layers are often patterned to produce the devices. Examples of such devices include optical displays in which each pixel is formed in a patterned array, optical waveguide structures for telecommunication devices, and metal-insulator-metal stacks for semiconductor-based devices.
- A conventional method for making these devices includes forming one or more layers on a receptor substrate and patterning the layers simultaneously or sequentially to form the device. In many cases, multiple deposition and patterning steps are required to prepare the ultimate device structure. For example, the preparation of optical displays may require the separate formation of red, green, and blue pixels. Although some layers may be commonly deposited for each of these types of pixels, at least some layers must be separately formed and often separately patterned. Patterning of the layers is often performed by photolithographic techniques that include, for example, covering a layer with a photoresist, patterning the photoresist using a mask, removing a portion of the photoresist to expose the underlying layer according to the pattern, and then etching the exposed layer.
- In some applications, it may be difficult or impractical to produce devices using conventional photolithographic patterning. For example, the number of patterning steps may be too large for practical manufacture of the device. In addition, wet processing steps in conventional photolithographic patterning may adversely affect integrity, interfacial characteristics, and/or electrical or optical properties of the previously deposited layers. It is conceivable that many potentially advantageous device constructions, designs, layouts, and materials are impractical because of the limitations of conventional photolithographic patterning. There is a need for new methods of forming these devices with a reduced number of processing steps, particularly wet processing steps. In at least some instances, this may allow for the construction of devices with more reliability and more complexity.
- Generally, the present invention relates to thermal transfer elements and methods of using thermal transfer elements for forming devices, including optical and electronic devices. One embodiment is a thermal transfer element that includes a substrate and a multicomponent transfer unit that, when transferred to a receptor, is configured and arranged to form at least a first operational layer and a second operational layer of a multilayer device. The first operational layer is configured and arranged to conduct or produce a charge carrier or to produce or waveguide light. Another embodiment is the device formed using the thermal transfer element. In at least some instances, the thermal transfer element also includes a light-to-heat conversion (LTHC) layer that can convert light energy to heat energy to transfer the multicomponent transfer unit. The terms “first operational layer” and “second operational layer” do not imply any order of the layers in the device or in the thermal transfer element or the proximity of the two layers to each other (i.e., there may be one or more layers between the first operational layer and the second operational layer.)
- Another embodiment is a thermal transfer element that includes a substrate and a multicomponent transfer unit disposed on the substrate. The multicomponent transfer unit is configured and arranged to form, upon transfer to a receptor, a first operational layer and a second operational layer of an electronic component or an optical device. In at least some instances, this thermal transfer element may also have a LTHC layer.
- A further embodiment is a thermal transfer element for forming an organic electroluminescent (OEL) device. This thermal transfer element includes a substrate and a multicomponent transfer unit that is configured and arranged to form, upon transfer to a receptor, at least two operational layers of the OEL device, such as, for example, an emitter layer and at least one electrode of the OEL device. Another embodiment is an OEL device formed using the thermal transfer element.
- Yet another embodiment is a thermal transfer element for forming a field effect transistor. This thermal transfer element includes a substrate and a multicomponent transfer unit that is configured and arranged to form, upon transfer to a receptor, at least two operational layers of the field effect transistor, such as a gate insulating layer and a semiconducting layer. Another embodiment is a field effect transistor formed using the thermal transfer element.
- Another embodiment is a thermal transfer element for forming a waveguide. This thermal transfer element includes a substrate and a multicomponent transfer unit that is configured and arranged to form, upon transfer to a receptor, at least two operational layers of the waveguide, such as at least one cladding layer and a core layer. Another embodiment is a waveguide formed using the thermal transfer element.
- A further embodiment is a method of transferring a multicomponent transfer unit to a receptor to form a device, including contacting a receptor with a thermal transfer element having a substrate and a transfer layer. The transfer layer includes a multicomponent transfer unit. The thermal transfer element is selectively heated to transfer the multicomponent transfer unit to the receptor according to a pattern to form at least a first operational layer and a second operational layer of a device. In at least some instances, the thermal transfer element includes a LTHC layer between the substrate and the transfer layer. The thermal transfer element is illuminated with light according to the pattern and the light energy is converted by the LTHC layer to heat energy to selectively heat the thermal transfer element.
- It will be recognized that thermal transfer elements can also be formed with a transfer unit that is configured and arranged to transfer a single layer. It will also be recognized that items, other than devices, may be formed by transferring either a multicomponent transfer unit or a single layer.
- The above summary of the present invention is not intended to describe each disclosed embodiment or every implementation of the present invention. The Figures and the detailed description which follow more particularly exemplify these embodiments.
- The invention may be more completely understood in consideration of the following detailed description of various embodiments of the invention in connection with the accompanying drawings, in which:
- FIG. 1A is a schematic cross-section of one example of a thermal transfer element according to the invention;
- FIG. 1B is a schematic cross-section of a second example of a thermal transfer element according to the invention;
- FIG. 1C is a schematic cross-section of a third example of a thermal transfer element according to the invention;
- FIG. 1D is a schematic cross-section of a fourth example of a thermal transfer element according to the invention;
- FIG. 2A is a schematic cross-section of a first example of a transfer layer, according to the invention, for use in any of the thermal transfer elements of FIGS. 1A to1D;
- FIG. 2B is a schematic cross-section of a second example of a transfer layer, according to the invention, for use in any of the thermal transfer elements of FIGS. 1A to1D;
- FIG. 2C is a schematic cross-section of a third example of a transfer layer, according to the invention, for use in any of the thermal transfer elements of FIGS. 1A to1D;
- FIG. 2D is a schematic cross-section of a fourth example of a transfer layer, according to the invention, for use in any of the thermal transfer elements of FIGS. 1A to1D;
- FIG. 3A is a schematic cross-section of an example of a transfer layer, according to the invention, for use in forming an organic electroluminescent device;
- FIG. 3B is a schematic cross-section of a second example of a transfer layer, according to the invention, for use in forming an organic electroluminescent device;
- FIGS. 4A to4C are cross-sectional views illustrating steps in one example of a process for forming a display device according to the invention;
- FIGS. 5A to5D are top views illustrating steps in one example of a process for forming a field effect transistor according to the invention;
- FIGS. 6A to6D are cross-sectional views corresponding to FIGS. 5A to 5D, respectively, and illustrating steps in the one example of a process for forming a field effect transistor; and
- FIG. 7 is a cross-sectional view of a coupled field effect transistor and organic electroluminescent device, according to the invention.
- While the invention is amenable to various modifications and alternative forms, specifics thereof have been shown by way of example in the drawings and will be described in detail. It should be understood, however, that the intention is not to limit the invention to the particular embodiments described. On the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
- The present invention is applicable to the formation or partial formation of devices and other objects using thermal transfer and thermal transfer elements for forming the devices or other objects. As a particular example, a thermal transfer element can be formed for making, at least in part, a multilayer device, such as a multilayer active and passive device, for example, a multilayer electronic and optical device. This can be accomplished, for example, by thermal transfer of a multicomponent transfer unit of a thermal transfer element. It will be recognized that single layer and other multilayer transfers can also be used to form devices and other objects. While the present invention is not so limited, an appreciation of various aspects of the invention will be gained through a discussion of the examples provided below.
- The term, “device”, includes an electronic or optical component that can be used by itself and/or with other components to form a larger system, such as an electronic circuit.
- The term, “active device”, includes an electronic or optical component capable of a dynamic function, such as amplification, oscillation, or signal control, and may require a power supply for operation.
- The term, “passive device”, includes an electronic or optical component that is basically static in operation (i.e., it is ordinarily incapable of amplification or oscillation) and may require no power for characteristic operation.
- The term, “active layer” includes layers that produce or conduct a charge carrier (e.g., electrons or holes) and/or produce or waveguide light in a device, such as a multilayer passive or active device. Examples of active layers include layers that act as conducting, semiconducting, superconducting, waveguiding, frequency multiplying, light producing (e.g., luminescing, light emitting, fluorescing or phosphorescing), electron producing, or hole producing layers in the device and/or layers that produce an optical or electronic gain in the device.
- The term, “operational layer” includes layers that are utilized in the operation of device, such as a multilayer active or passive device. Examples of operational layers include layers that act as insulating, conducting, semiconducting, superconducting, waveguiding, frequency multiplying, light producing (e.g., luminescing, light emitting, fluorescing or phosphorescing), electron producing, hole producing, magnetic, light absorbing, reflecting, diffracting, phase retarding, scattering, dispersing, refracting, polarizing, or diffusing layers in the device and/or layers that produce an optical or electronic gain in the device.
- The term, “non-operational layer” includes layers that do not perform a function in the operation of the device, but are provided solely, for example, to facilitate transfer of a transfer layer to a receptor substrate, to protect layers of the device from damage and/or contact with outside elements, and/or to adhere the transfer layer to the receptor substrate.
- An active or passive device can be formed, at least in part, by the transfer of a transfer layer from a thermal transfer element. The thermal transfer element can be heated by application of directed heat on a selected portion of the thermal transfer element. Heat can be generated using a heating element (e.g., a resistive heating element), converting radiation (e.g., a beam of light) to heat, and/or applying an electrical current to a layer of the thermal transfer element to generate heat. In many instances, thermal transfer using light from, for example, a lamp or laser, is advantageous because of the accuracy and precision that can often be achieved. The size and shape of the transferred pattern (e.g., a line, circle, square, or other shape) can be controlled by, for example, selecting the size of the light beam, the exposure pattern of the light beam, the duration of directed beam contact with the thermal transfer element, and the materials of the thermal transfer element.
- The thermal transfer element can include a transfer layer that can be used to form, for example, electronic circuitry, resistors, capacitors, diodes, rectifiers, electroluminescent lamps, memory elements, field effect transistors, bipolar transistors, unijunction transistors, MOS transistors, metal-insulator-semiconductor transistors, charge coupled devices, insulator-metal-insulator stacks, organic conductor-metal-organic conductor stacks, integrated circuits, photodetectors, lasers, lenses, waveguides, gratings, holographic elements, filters (e.g., add-drop filters, gain-flattening filters, cut-off filters, and the like), mirrors, splitters, couplers, combiners, modulators, sensors (e.g., evanescent sensors, phase modulation sensors, interferometric sensors, and the like), optical cavities, piezoelectric devices, ferroelectric devices, thin film batteries, or combinations thereof; for example, the combination of field effect transistors and organic electroluminescent lamps as an active matrix array for an optical display. Other items may be formed by transferring a multicomponent transfer unit and/or a single layer.
- Thermal transfer of layers to form devices is useful, for example, to reduce or eliminate wet processing steps of processes such as photolithographic patterning which is used to form many electronic and optical devices. In addition, thermal transfer using light can often provide better accuracy and quality control for very small devices, such as small optical and electronic devices, including, for example, transistors and other components of integrated circuits, as well as components for use in a display, such as electroluminescent lamps and control circuitry. Moreover, thermal transfer using light may, at least in some instances, provide for better registration when forming multiple devices over an area that is large compared to the device size. As an example, components of a display, which has many pixels, can be formed using this method.
- In some instances, multiple thermal transfer elements may be used to form a device or other object. The multiple thermal transfer elements may include thermal transfer elements with multicomponent transfer units and thermal transfer elements that transfer a single layer. For example, a device or other object may be formed using one or more thermal transfer elements with multicomponent transfer units and one or more thermal transfer elements that transfer a single layer.
- One example of a suitable
thermal transfer element 100 is illustrated in FIG. 1A. Thethermal transfer element 100 includes adonor substrate 102, anoptional primer layer 104, a light-to-heat conversion (LTHC)layer 106, anoptional interlayer 108, anoptional release layer 112, and atransfer layer 110. Directed light from a light-emitting source, such as a laser or lamp, can be used to illuminate thethermal transfer element 100 according to a pattern. TheLTHC layer 106 contains a radiation absorber that converts light energy to heat energy. The conversion of the light energy to heat energy results in the transfer of a portion of thetransfer layer 110 to a receptor (not shown). - Another example of a
thermal transfer element 120 includes adonor substrate 122, aLTHC layer 124, aninterlayer 126, and atransfer layer 128, as illustrated in FIG. 1B. Another suitablethermal transfer element 140 includes adonor substrate 142, aLTHC layer 144, and atransfer layer 146, as illustrated in FIG. 1C. Yet another example of athermal transfer element 160 includes adonor substrate 162 and atransfer layer 164, as illustrated in FIG. 1D, with an optional radiation absorber disposed in thedonor substrate 162 and/ortransfer layer 164 to convert light energy to heat energy. Alternatively, thethermal transfer element 160 may be used without a radiation absorber for thermal transfer of thetransfer layer 164 using a heating element, such as a resistive heating element, that contacts the thermal transfer element to selectively heat the thermal transfer element and transfer the transfer layer according to a pattern. Athermal transfer element 160 without radiation absorber may optionally include a release layer, an interlayer, and/or other layers (e.g., a coating to prevent sticking of the resistive heating element) used in the art. - For thermal transfer using radiation (e.g., light), a variety of radiation-emitting sources can be used in the present invention. For analog techniques (e.g., exposure through a mask), high-powered light sources (e.g., xenon flash lamps and lasers) are useful. For digital imaging techniques, infrared, visible, and ultraviolet lasers are particularly useful. Suitable lasers include, for example, high power (≧100 mW) single mode laser diodes, fiber-coupled laser diodes, and diode-pumped solid state lasers (e.g., Nd:YAG and Nd:YLF). Laser exposure dwell times can be in the range from, for example, about 0.1 to 100 microseconds and laser fluences can be in the range from, for example, about 0.01 to about 1 J/cm2.
- When high spot placement accuracy is required (e.g. for high information full color display applications) over large substrate areas, a laser is particularly useful as the radiation source. Laser sources are compatible with both large rigid substrates such as 1 m×1 m×1.1 mm glass, and continuous or sheeted film substrates, such as 100 μm polyimide sheets.
- Resistive thermal print heads or arrays may be used, for example, with simplified donor film constructions lacking a LTHC layer and radiation absorber. This may be particularly useful with smaller substrate sizes (e.g., less than approximately 30 cm in any dimension) or for larger patterns, such as those required for alphanumeric segmented displays.
- Donor Substrate and Optional Primer Layer
- The donor substrate can be a polymer film. One suitable type of polymer film is a polyester film, for example, polyethylene terephthalate or polyethylene naphthalate films. However, other films with sufficient optical properties (if light is used for heating and transfer), including high transmission of light at a particular wavelength, as well as sufficient mechanical and thermal stability for the particular application, can be used. The donor substrate, in at least some instances, is flat so that uniform coatings can be formed. The donor substrate is also typically selected from materials that remain stable despite heating of the LTHC layer. The typical thickness of the donor substrate ranges from 0.025 to 0.15 mm, preferably 0.05 to 0.1 mm, although thicker or thinner donor substrates may be used.
- Typically, the materials used to form the donor substrate and the LTHC layer are selected to improve adhesion between the LTHC layer and the donor substrate. An optional prirning layer can be used to increase uniformity during the coating of subsequent layers and also increase the interlayer bonding strength between the LTHC layer and the donor substrate. One example of a suitable substrate with primer layer is available from Teijin Ltd. (Product No. HPE100, Osaka, Japan).
- Light-to-Heat Conversion (LTHC) Layer
- For radiation-induced thermal transfer a light-to-heat conversion (LTHC) layer is typically incorporated within the thermal transfer element to couple the energy of light radiated from a light-emitting source into the thermal transfer element. The LTHC layer preferably includes a radiation absorber that absorbs incident radiation (e.g., laser light) and converts at least a portion of the incident radiation into heat to enable transfer of the transfer layer from the thermal transfer element to the receptor. In some embodiments, there is no separate LTHC layer and, instead, the radiation absorber is disposed in another layer of the thermal transfer element, such as the donor substrate or the transfer layer. In other embodiments, the thermal transfer element includes an LTHC layer and also includes additional radiation absorber(s) disposed in one or more of the other layers of the thermal transfer element, such as, for example, the donor substrate or the transfer layer. In yet other embodiments, the thermal transfer element does not include an LTHC layer or radiation absorber and the transfer layer is transferred using a heating element that contacts the thermal transfer element.
- Typically, the radiation absorber in the LTHC layer (or other layers) absorbs light in the infrared, visible, and/or ultraviolet regions of the electromagnetic spectrum. The radiation absorber is typically highly absorptive of the selected imaging radiation, providing an optical density at the wavelength of the imaging radiation in the range of 0.2 to 3, and preferably from 0.5 to 2. Suitable radiation absorbing materials can include, for example, dyes (e.g., visible dyes, ultraviolet dyes, infrared dyes, fluorescent dyes, and radiation-polarizing dyes), pigments, metals, metal compounds, metal films, and other suitable absorbing materials. Examples of suitable radiation absorbers can include carbon black, metal oxides, and metal sulfides. One example of a suitable LTHC layer can include a pigment, such as carbon black, and a binder, such as an organic polymer. Another suitable LTHC layer can include metal or metal/metal oxide formed as a thin film, for example, black aluminum (i.e., a partially oxidized aluminum having a black visual appearance). Metallic and metal compound films may be formed by techniques, such as, for example, sputtering and evaporative deposition. Particulate coatings may be formed using a binder and any suitable dry or wet coating techniques.
- Dyes suitable for use as radiation absorbers in a LTHC layer may be present in particulate form, dissolved in a binder material, or at least partially dispersed in a binder material. When dispersed particulate radiation absorbers are used, the particle size can be, at least in some instances, about 10 μm or less, and may be about 1 μm or less. Suitable dyes include those dyes that absorb in the IR region of the spectrum. Examples of such dyes may be found in Matsuoka, M., “Infrared Absorbing Materials”, Plenum Press, New York, 1990; Matsuoka, M.,Absorption Spectra of Dyes for Diode Lasers, Bunshin Publishing Co., Tokyo, 1990, U.S. Pat. Nos. 4,722,583; 4,833,124; 4,912,083; 4,942,141; 4,948,776; 4,948,778; 4,950,639; 4,940,640; 4,952,552; 5,023,229; 5,024,990; 5,156,938; 5,286,604; 5,340,699; 5,351,617; 5,360,694; and 5,401,607; European Patent Nos. 321,923 and 568,993; and Beilo, K. A. et al., J. Chem. Soc., Chem. Commun., 1993, 452-454 (1993), all of which are herein incorporated by reference. IR absorbers marketed by Glendale Protective Technologies, Inc., Lakeland, Fla., under the designation CYASORB IR-99, IR-126 and IR-165 may also be used. A specific dye may be chosen based on factors such as, solubility in, and compatibility with, a specific binder and/or coating solvent, as well as the wavelength range of absorption.
- Pigmentary materials may also be used in the LTHC layer as radiation absorbers. Examples of suitable pigments include carbon black and graphite, as well as phthalocyanines, nickel dithiolenes, and other pigments described in U.S. Pat. Nos. 5,166,024 and 5,351,617, incorporated herein by reference. Additionally, black azo pigments based on copper or chromium complexes of, for example, pyrazolone yellow, dianisidine red, and nickel azo yellow can be useful. Inorganic pigments can also be used, including, for example, oxides and sulfides of metals such as aluminum, bismuth, tin, indium, zinc, titanium, chromium, molybdenum, tungsten, cobalt, iridium, nickel, palladium, platinum, copper, silver, gold, zirconium, iron, lead, and tellurium. Metal borides, carbides, nitrides, carbonitrides, bronze-structured oxides, and oxides structurally related to the bronze family (e.g., WO2.9) may also be used.
- Metal radiation absorbers may be used, either in the form of particles, as described for instance in U.S. Pat. No. 4,252,671, incorporated herein by reference, or as films, as disclosed in U.S. Pat. No. 5,256,506, incorporated herein by reference. Suitable metals include, for example, aluminum, bismuth, tin, indium, tellurium and zinc.
- As indicated, a particulate radiation absorber may be disposed in a binder. The weight percent of the radiation absorber in the coating, excluding the solvent in the calculation of weight percent, is generally from 1 wt. % to 30 wt. %, preferably from 3 wt. % to 20 wt. %, and most preferably from 5 wt. % to 15 wt. %, depending on the particular radiation absorber(s) and binder(s) used in the LTHC.
- Suitable binders for use in the LTHC layer include film-forming polymers, such as, for example, phenolic resins (e.g., novolak and resole resins), polyvinyl butyral resins, polyvinyl acetates, polyvinyl acetals, polyvinylidene chlorides, polyacrylates, cellulosic ethers and esters, nitrocelluloses, and polycarbonates. Suitable binders may include monomers, oligomers, or polymers that have been or can be polymerized or crosslinked. In some embodiments, the binder is primarily formed using a coating of crosslinkable monomers and/or oligomers with optional polymer. When a polymer is used in the binder, the binder includes 1 to 50 wt. %, preferably, 10 to 45 wt. %, polymer (excluding the solvent when calculating wt. %).
- Upon coating on the donor substrate, the monomers, oligomers, and polymers are crosslinked to form the LTHC. In some instances, if crosslinking of the LTHC layer is too low, the LTHC layer may be damaged by the heat and/or permit the transfer of a portion of the LTHC layer to the receptor with the transfer layer.
- The inclusion of a thermoplastic resin (e.g., polymer) may improve, in at least some instances, the performance (e.g., transfer properties and/or coatability) of the LTHC layer. It is thought that a thermoplastic resin may improve the adhesion of the LTHC layer to the donor substrate. In one embodiment, the binder includes 25 to 50 wt. % (excluding the solvent when calculating weight percent) thermoplastic resin, and, preferably, 30 to 45 wt. % thermoplastic resin, although lower amounts of thermoplastic resin may be used (e.g., 1 to 15 wt. %). The thermoplastic resin is typically chosen to be compatible (i.e., form a one-phase combination) with the other materials of the binder. A solubility parameter can be used to indicate compatibility,Polymer Handbook, J. Brandrup, ed., pp. VII 519-557 (1989), incorporated herein by reference. In at least some embodiments, a thermoplastic resin that has a solubility parameter in the range of 9 to 13 (cal/cm3)½, preferably, 9.5 to 12 (cal/cm3)½, is chosen for the binder. Examples of suitable thermoplastic resins include polyacrylics, styrene-acrylic polymers and resins, and polyvinyl butyral.
- Conventional coating aids, such as surfactants and dispersing agents, may be added to facilitate the coating process. The LTHC layer may be coated onto the donor substrate using a variety of coating methods known in the art. A polymeric or organic LTHC layer is coated, in at least some instances, to a thickness of 0.05 μm to 20 μm, preferably, 0.5 μm to 10 μm, and, most preferably, 1 μm to 7 μm. An inorganic LTHC layer is coated, in at least some instances, to a thickness in the range of 0.001 to 10 μm, and preferably, 0.002 to 1 μm.
- This LTHC layer can be used in a variety of thermal transfer elements, including thermal transfer elements that have a multicomponent transfer unit and thermal transfer elements that are used to transfer a single layer of a device or other item. The LTHC layer can be used with thermal transfer elements that are useful in forming multilayer devices, as described above, as well as thermal transfer elements that are useful for forming other items. Examples include such items as color filters, spacer layers, black matrix layers, printed circuit boards, displays (for example, liquid crystal and emissive displays), polarizers, z-axis conductors, and other items that can be formed by thermal transfer including, for example, those described in U.S. Pat. Nos. 5,156,938; 5,171,650; 5,244,770; 5,256,506; 5,387,496; 5,501,938; 5,521,035; 5,593,808; 5,605,780; 5,612,165; 5,622,795; 5,685,939; 5,691,114; 5,693,446; and 5,710,097 and PCT Patent Applications Nos. 98/03346 and 97/15173.
- Interlayer
- An optional interlayer may be used to minimize damage and contamination of the transferred portion of the transfer layer and may also reduce distortion in the transferred portion of the transfer layer. The interlayer may also influence the adhesion of the transfer layer to the rest of the thermal transfer element. Typically, the interlayer has high thermal resistance. Preferably, the interlayer does not distort or chemically decompose under the imaging conditions, particularly to an extent that renders the transferred image non-functional. The interlayer typically remains in contact with the LTHC layer during the transfer process and is not substantially transferred with the transfer layer.
- Suitable interlayers include, for example, polymer films, metal layers (e.g., vapor deposited metal layers), inorganic layers (e.g., sol-gel deposited layers and vapor deposited layers of inorganic oxides (e.g., silica, titania, and other metal oxides)), and organic/inorganic composite layers. Organic materials suitable as interlayer materials include both thermoset and thermoplastic materials. Suitable thermoset materials include resins that may be crosslinked by heat, radiation, or chemical treatment including, but not limited to, crosslinked or crosslinkable polyacrylates, polymethacrylates, polyesters, epoxies, and polyurethanes. The thermoset materials may be coated onto the LTHC layer as, for example, thermoplastic precursors and subsequently crosslinked to form a crosslinked interlayer.
- Suitable thermoplastic materials include, for example, polyacrylates, polymethacrylates, polystyrenes, polyurethanes, polysulfones, polyesters, and polyimides. These thermoplastic organic materials may be applied via conventional coating techniques (for example, solvent coating, spray coating, or extrusion coating). Typically, the glass transition temperature (Tg) of thermoplastic materials suitable for use in the interlayer is 25° C. or greater, preferably 50° C. or greater, more preferably 100° C. or greater, and, most preferably, 150° C. or greater. The interlayer may be either transmissive, absorbing, reflective, or some combination thereof, at the imaging radiation wavelength.
- Inorganic materials suitable as interlayer materials include, for example, metals, metal oxides, metal sulfides, and inorganic carbon coatings, including those materials that are highly transmissive or reflective at the imaging light wavelength. These materials may be applied to the light-to-heat-conversion layer via conventional techniques (e.g., vacuum sputtering, vacuum evaporation, or plasma jet deposition).
- The interlayer may provide a number of benefits. The interlayer may be a barrier against the transfer of material from the light-to-heat conversion layer. It may also modulate the temperature attained in the transfer layer so that thermally unstable materials can be transferred. The presence of an interlayer may also result in improved plastic memory in the transferred material.
- The interlayer may contain additives, including, for example, photoinitiators, surfactants, pigments, plasticizers, and coating aids. The thickness of the interlayer may depend on factors such as, for example, the material of the interlayer, the material of the LTHC layer, the material of the transfer layer, the wavelength of the imaging radiation, and the duration of exposure of the thermal transfer element to imaging radiation. For polymer interlayers, the thickness of the interlayer typically is in the range of 0.05 μm to 10 μm, preferably, from about 0.1 μm to 4 ,μm, more preferably, 0.5 to 3 μm, and, most preferably, 0.8 to 2 μm. For inorganic interlayers (e.g., metal or metal compound interlayers), the thickness of the interlayer typically is in the range of 0.005 μm to 10 μm, preferably, from about 0.01 μm to 3 μm, and, more preferably, from about 0.02 to 1 μm.
- Release Layer
- The optional release layer typically facilitates release of the transfer layer from the rest of the thermal transfer element (e.g., the interlayer and/or the LTHC layer) upon heating of the thermal transfer element, for example, by a light-emitting source or a heating element. In at least some cases, the release layer provides some adhesion of the transfer layer to the rest of the thermal transfer element prior to exposure to heat. Suitable release layers include, for example, conducting and non-conducting thermoplastic polymers, conducting and non-conducting filled polymers, and/or conducting and non-conducting dispersions. Examples of suitable polymers include acrylic polymers, polyanilines, polythiophenes, poly(phenylenevinylenes), polyacetylenes, and other conductive organic materials, such as those listed inHandbook of Conductive Molecules and Polymers, Vols. 1-4, H. S. Nalwa, ed., John Wiley and Sons, Chichester (1997), incorporated herein by reference. Examples of suitable conductive dispersions include inks containing carbon black, graphite, ultrafine particulate indium tin oxide, ultrafine antimony tin oxide, and commercially available materials from companies such as Nanophase Technologies Corporation (Burr Ridge, Ill.) and Metech (Elverson, Pa.). Other suitable materials for the release layer include sublimable insulating materials and sublimable semiconducting materials (such as phthalocyanines), including, for example, the materials described in U.S. Pat. No. 5,747,217, incorporated herein by reference.
- The release layer may be part of the transfer layer or a separate layer. All or a portion of the release layer may be transferred with the transfer layer. Alternatively, most or substantially all of the release layer remains with the donor substrate when the transfer layer is transferred. In some instances, for example, with a release layer including sublimable material, a portion of the release layer may be dissipated during the transfer process.
- Transfer Layer
- The transfer layer typically includes one or more layers for transfer to a receptor. These one or more layers may be formed using organic, inorganic, organometallic, and other materials. Although the transfer layer is described and illustrated as having discrete layers, it will be appreciated that, at least in some instances, there may be an interfacial region that includes at least a portion of each layer. This may occur, for example, if there is mixing of the layers or diffusion of material between the layers before, during, or after transfer of the transfer layer. In other instances, two layers may be completely or partially mixed before, during, or after transfer of the transfer layer. In any case, these structures will be referred to as including more than one independent layer, particularly if different functions of the device are performed by the different regions.
- One example of a transfer layer includes a multicomponent transfer unit that is used to form a multilayer device, such as an active or passive device, on a receptor. In some cases, the transfer layer may include all of the layers needed for the active or passive device. In other instances, one or more layers of the active or passive device may be provided on the receptor, the rest of the layers being included in the transfer layer. Alternatively, one or more layers of the active or passive device may be transferred onto the receptor after the transfer layer has been deposited. In some instances, the transfer layer is used to form only a single layer of the active or passive device or a single or multiple layer of an item other than a device. One advantage of using a multicomponent transfer unit, particularly if the layers do not mix, is that the important interfacial characteristics of the layers in the multicomponent transfer unit can be produced when the thermal transfer unit is prepared and, preferably, retained during transfer. Individual transfer of layers may result in less optimal interfaces between layers.
- The multilayer device formed using the multicomponent transfer unit of the transfer layer may be, for example, an electronic or optical device. Examples of such devices include electronic circuitry, resistors, capacitors, diodes, rectifiers, electroluminescent lamps, memory elements, field effect transistors, bipolar transistors, unijunction transistors, MOS transistors, metal-insulator-semiconductor transistors, charge coupled devices, insulator-metal-insulator stacks, organic conductor-metal-organic conductor stacks, integrated circuits, photodetectors, lasers, lenses, waveguides, gratings, holographic elements, filters (e.g., add-drop filters, gain-flattening filters, cut-off filters, and the like), mirrors, splitters, couplers, combiners, modulators, sensors (e.g., evanescent sensors, phase modulation sensors, interferometric sensors, and the like), optical cavities, piezoelectric devices, ferroelectric devices, thin film batteries, or combinations thereof. Other electrically conductive devices that can be formed include, for example, electrodes and conductive elements.
- Embodiments of the transfer layer include a multicomponent transfer unit that is used to form at least a portion of a passive or active device. As an example, in one embodiment, the transfer layer includes a multicomponent transfer unit that is capable of forming at least two layers of a multilayer device. These two layers of the multilayer device often correspond to two layers of the transfer layer. In this example, one of the layers that is formed by transfer of the multicomponent transfer unit is an active layer (i.e., a layer that acts as a conducting, semiconducting, superconducting, waveguiding, frequency multiplying, light producing (e.g., luminescing, light emitting, fluorescing, or phosphorescing), electron producing, or hole producing layer in the device and/or as a layer that produces an optical or electronic gain in the device.) A second layer that is formed by transfer of the multicomponent transfer unit is another active layer or an operational layer (i.e., a layer that acts as an insulating, conducting, semiconducting, superconducting, waveguiding, frequency multiplying, light producing (e.g., fluorescing or phosphorescing), electron producing, hole producing, light absorbing, reflecting, diffracting, phase retarding, scattering, dispersing, or diffusing layer in the device and/or as a layer that produces an optical or electronic gain in the device.) The multicomponent transfer unit may also be used to form additional active layers and/or operational layers, as well as, non-operational layers (i.e., layers that do not perform a function in the operation of the device, but are provided, for example, to facilitate transfer of a transfer unit to a receptor substrate and/or adhere the transfer unit to the receptor substrate.)
- The transfer layer may include an adhesive layer disposed on an outer surface of the transfer layer to facilitate adhesion to the receptor. The adhesive layer may be an operational layer, for example, if the adhesive layer conducts electricity between the receptor and the other layers of the transfer layer, or a non-operational layer, for example, if the adhesive layer only adheres the transfer layer to the receptor. The adhesive layer may be formed using, for example, thermoplastic polymers, including conducting and non-conducting polymers, conducting and non-conducting filled polymers, and/or conducting and non-conducting dispersions. Examples of suitable polymers include acrylic polymers, polyanilines, polythiophenes, poly(phenylenevinylenes), polyacetylenes, and other conductive organic materials such as those listed inHandbook of Conductive Molecules and Polymers, Vols. 1-4, H. S. Nalwa, ed., John Wiley and Sons, Chichester (1997), incorporated herein by reference. Examples of suitable conductive dispersions include inks containing carbon black, graphite, ultrafine particulate indium tin oxide, ultrafine antimony tin oxide, and commercially available materials from companies such as Nanophase Technologies Corporation (Burr Ridge, Ill.) and Metech (Elverson, Pa.).
- The transfer layer may also include a release layer disposed on the surface of the transfer layer that is in contact with the rest of the thermal transfer element. As described above, this release layer may partially or completely transfer with the remainder of the transfer layer or substantially all of the release layer may remain with the thermal transfer element upon transfer of the transfer layer. Suitable release layers are described above.
- Although the transfer layer may be formed with discrete layers, it will be understood that, in at least some embodiments, the transfer layer may include layers that have multiple components and/or multiple uses in the device. It will also be understood that, at least in some embodiments, two or more discrete layers may be melted together during transfer or otherwise mixed or combined. In any case, these layers, although mixed or combined, will be referred to as individual layers.
- One example of a
transfer layer 170, illustrated in FIG. 2A, includes a conductive metal or metal compound layer 172 and aconductive polymer layer 174 for contact with a receptor (not shown). Theconductive polymer layer 174 may also act, at least in part, as an adhesive layer to facilitate transfer to the receptor. A second example of atransfer layer 180, illustrated in FIG. 2B, includes arelease layer 182, followed by a conductive metal ormetal compound layer 184, and then a conductive ornon-conductive polymer layer 186 for contact with a receptor (not shown). A third example of atransfer layer 190, illustrated in FIG. 2C, includes a conductive inorganic layer 191 (for example, vapor deposited indium tin oxide), a conductive ornon-conductive polymer layer 192 for contact with a receptor, and an optional release layer (not shown). A fourth example of atransfer layer 195, illustrated in FIG. 2D, consists of amultilayer metal stack 196 of alternatingmetals non-conductive polymer layer 199 for contact with a receptor. - Transfer Layer for an OEL Device
- The transfer of a multicomponent transfer unit to form at least a portion of an OEL (organic electroluminescent) device provides an illustrative, non-limiting example of the formation of an active device using a thermal transfer element. In at least some instances, an OEL device includes a thin layer, or layers, of suitable organic materials sandwiched between a cathode and an anode. Electrons are injected into the organic layer(s) from the cathode and holes are injected into the organic layer(s) from the anode. As the injected charges migrate towards the oppositely charged electrodes, they may recombine to form electron-hole pairs which are typically referred to as excitons. These excitons, or excited state species, may emit energy in the form of light as they decay back to a ground state (see, for example, T. Tsutsui,MRS Bulletin, 22, 39-45 (1997), incorporated herein by reference).
- Illustrative examples of OEL device constructions include molecularly dispersed polymer devices where charge carrying and/or emitting species are dispersed in a polymer matrix (see J. Kido “Organic Electroluminescent devices Based on Polymeric Materials”,Trends in Polymer Science, 2, 350-355 (1994), incorporated herein by reference), conjugated polymer devices where layers of polymers such as polyphenylene vinylene act as the charge carrying and emitting species (see J. J. M. Halls et al., Thin Solid Films, 276, 13-20 (1996), herein incorporated by reference), vapor deposited small molecule heterostructure devices (see U.S. Pat. No. 5,061,569 and C. H. Chen et al., “Recent Developments in Molecular Organic Electroluminescent Materials”, Macromolecular Symposia, 125, 1-48 (1997), herein incorporated by reference), light emitting electrochemical cells (see Q. Pei et al., J. Amer. Chem. Soc., 118, 3922-3929 (1996), herein incorporated by reference), and vertically stacked organic light-emitting diodes capable of emitting light of multiple wavelengths (see U.S. Pat. No. 5,707,745 and Z. Shen et al., Science, 276, 2009-2011 (1997), herein incorporated by reference).
- One suitable example of a
transfer layer 200 for forming an OEL device is illustrated in FIG. 3A. Thetransfer layer 200 includes ananode 202, ahole transport layer 204, an electron transport/emitter layer 206, and acathode 208. Alternatively, either the cathode or anode can be provided separately on a receptor (e.g., as a conductive coating on the receptor) and not in the transfer layer. This is illustrated in FIG. 3B, for ananode-less transfer layer 200′ using primed reference numerals to indicate layers in common with thetransfer layer 200. - The
transfer layer 200 may also include one or more layers, such as arelease layer 210 and/or anadhesive layer 212, to facilitate the transfer of the transfer layer to the receptor. Either of these two layers can be conductive polymers to facilitate electrical contact with a conductive layer or structure on the receptor or conductive layer(s) formed subsequently on the transfer layer. It will be understood that the positions of the release layer and adhesive layer could be switched with respect to the other layers of the transfer layer. - The
anode 202 andcathode 208 are typically formed using conducting materials such as metals, alloys, metallic compounds, metal oxides, conductive ceramics, conductive dispersions, and conductive polymers, including, for example, gold, platinum, palladium, aluminum, titanium, titanium nitride, indium tin oxide (ITO), fluorine tin oxide (FTO), and polyaniline. Theanode 202 and thecathode 208 can be single layers of conducting materials or they can include multiple layers. For example, an anode or a cathode may include a layer of aluminum and a layer of gold or a layer of aluminum and a layer of lithium fluoride. For many applications, such as display applications, it is preferred that at least one of the cathode and anode be transparent to the light emitted by the electroluminescent device. - The
hole transport layer 204 facilitates the injection of holes into the device and their migration towards thecathode 208. Thehole transport layer 204 further acts as a barrier for the passage of electrons to theanode 202. Thehole transport layer 204 can include, for example, a diamine derivative, such as N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine (also known as TPD). - The electron transport/
emitter layer 206 facilitates the injection of electrons and their migration towards theanode 202. The electron transport/emitter layer 206 further acts as a barrier for the passage of holes to thecathode 208. The electron transport/emitter layer 206 is often formed from a metal chelate compound, such as, for example, tris(8-hydroxyquinoline) aluminum (ALQ). - The interface between the
hole transport layer 204 and electron transport/emitter layer 206 forms a barrier for the passage of holes and electrons and thereby creates a hole/electron recombination zone and provides an efficient organic electroluminescent device. When the emitter material is ALQ, the OEL device emits blue-green light. The emission of light of different colors may be achieved by the use of different emitters and dopants in the electron transport/emitter layer 206 (see C. H. Chen et al., “Recent Developments in Molecular Organic Electroluminescent Materials”, Macromolecular Symposia, 125, 1-48 (1997), herein incorporated by reference). - Other OEL multilayer device constructions may be transferred using different transfer layers. For example, the
hole transporting layer 204 in FIG. 3A could also be an emitter layer and/or thehole transporting layer 204 and the electron transporting/emitter layer 206 could be combined into one layer. Furthermore, a separate emitter layer could be interposed betweenlayers green OEL devices 302 can be transferred onto thereceptor substrate 300, as shown in FIG. 4A. Subsequently,blue OEL devices 304 and thenred OEL devices 306 may be transferred, as shown in FIGS. 4B and 4C. Each of the green, blue, andred OEL devices - After formation, the OEL device is typically coupled to a driver (not shown) and sealed to prevent damage. The thermal transfer element can be a small or a relatively large sheet coated with the appropriate transfer layer. The use of laser light or other similar light-emitting sources for transferring these devices permits the formation of narrow lines and other shapes from the thermal transfer element. A laser or other light source could be used to produce a pattern of the transfer layer on the receptor, including receptors that may be meters in length and width.
- This example illustrates advantages of using the thermal transfer elements. For example, the number of processing steps can be reduced as compared to conventional photolithography methods because many of the layers of each OEL device are transferred simultaneously, rather than using multiple etching and masking steps. In addition, multiple devices and patterns can be created using the same imaging hardware. Only the thermal transfer element needs to be changed for each of the
different devices - Transfer Layer for a Field Effect Transistor
- A field effect transistor (FET) can be formed using one or more thermal transfer elements. One example of an organic field effect transistor that could be formed using thermal transfer elements is described in Garnier, et al.,Adv. Mater. 2, 592-594 (1990), incorporated herein by reference.
- Field effect transistors are, in general, three terminal electronic devices capable of modulating the current flow between two terminals (source and drain) 5 with the application of an electric field at the remaining terminal (gate) (see, for example, S. M. Sze,Physics of Semiconductor Devices, 2nd Ed. Wiley, New York, 431-435 (1981), incorporated herein by reference). In one representative construction, a field effect transistor consists of a rectangular slab of semiconducting material bounded on opposite ends with two electrodes—the source and drain electrodes. On one of the other surfaces an insulating layer (gate dielectric) and subsequent electrode (gate electrode) are formed. An electric field is applied between the gate electrode and the semiconductor slab. The conductivity, and therefore current flow, between the source and drain electrodes is controlled by the polarity and strength of the gate-insulator-semiconductor field.
- It is also possible to construct a field effect transistor without a gate insulator. Field effect transistors can be assembled with a gate electrode/semiconductor rectifying region. The conductivity between the source and drain electrodes is modulated by varying the polarity and strength of the gate/semiconductor field which controls the depletion region at the gate/semiconductor interface. This type of construction is typically referred to as a MESFET or JFET, metal semiconductor FET or Junction FET respectively (see, for example, S. M. Sze,Physics of Semiconductor Devices, 2nd Ed. Wiley, New York, 312-324 (1981), incorporated herein by reference).
- Material selection for the metal electrodes, gate dielectric and semiconductor may be influenced several parameters including conductivity, reliability, electron affinity, fermi level, processing compatibility, device application, and cost. For example, in general, it is advantageous to select a metal with a low work function to form an electrical contact with an n-type (electron conducting) semiconductor.
- An example of the formation of a field effect transistor is illustrated in FIGS. 4A to4D and 5A to 5D. The field effect transistor is formed on a
receptor substrate 500 upon whichelectrical contacts receptor substrate 500 is typically formed from a non-conducting material, such as glass or a non-conducting plastic or thereceptor substrate 500 is covered with a non-conductive coating. Theelectrical contacts electrical contacts electrical contacts - A
gate electrode 510 is formed between two opposingelectrodes gate electrode 510 can be formed using a first thermal transfer element with a transfer layer including the material chosen for the gate electrode. Suitable materials for the gate electrode include metals, metallic compounds, conducting polymers, filled polymers, and conducting inks. Examples of materials for the gate electrode include gold, silver, platinum, carbon, indium tin oxide, polyaniline, and carbon black filled polymers. - A
gate insulating layer 512 and asemiconductor layer 514 are formed over thegate electrode 510, as shown in FIGS. 4C and 5C. These twolayers gate insulating layer 512 can be formed using organic or inorganic insulators, such as silicon dioxide, silicon nitride, tantalum oxide, other inorganic oxides, polyimides, polyamic acids, acrylics, cyanoethylpullulan, and magnesium fluoride. The organic polymers used as gate insulating layers may be filled with an insulating material such as ultrafine silica particles. - The
semiconductor layer 514 can be formed using organic and inorganic semiconductors, such as polythiophenes, oligomeric thiophenes, polyphenylvinylenes, polyacetylenes, metallophthalocyanines, and amorphous and polycrystalline silicon and germanium. - Finally, source and
drain contacts seiniconducting layer 514 and opposingelectrical contacts region 520 between the source anddrain contacts drain contacts - An
OEL device 600 andfield effect transistor 610 can be combined, for example, where one of the electrical contacts of the transistor is also the anode orcathode 620 of the OEL device, as shown in FIG. 7. This combination allows the field effect transistor to control the operation of the OEL device. A display unit with this combination can be made using, for example, three or more thermal transfer elements to form the field effect transistor and at least one additional thermal transfer element to form the OEL device, as described above. - Transfer Layer for an Optical Waveguide
- Optical waveguides typically include a core of material that is substantially transparent to light of the wavelength of interest. The core is covered by a cladding material that is also is substantially transparent to the light of the wavelength of interest. The light is transmitted through, and substantially confined in, the core of the waveguide by total internal reflectance caused by the difference in the index of refraction between the core and the cladding. Typically, the index of refraction of the core is slightly greater than the index of refraction of the cladding. The performance of a waveguide is influenced by many factors such as, for example, the shape, length, and transparency of the waveguide and the difference in refractive index between the core and the cladding. Typically, a difference in refractive index between the core and the cladding of 0.002 to 0.5 is desirable. These variables can be manipulated by those skilled in the art to fabricate waveguides with performance optimized for their intended use. Core and cladding materials that are useful in forming waveguides include glass and organic polymers.
- Conventionally, optical waveguides are manufactured by a variety of methods, such as photolithography, diffusion, and ion implantation processes. For example, a conventional waveguide can be manufactured by applying a suitable optical material onto a substrate, typically in a sandwich form, resulting in a core region surrounded by a cladding region. A photoresist material is then applied onto the sandwich and patterned by a photolithographic process. The pattern defined by the photolithographic process is then transferred to the waveguide sandwich by an etching process. The substrate with the etched pattern is then cleaned, which removes the remaining photoresist and leaves the resultant waveguide on the substrate.
- An optical waveguide can be formed using one or more thermal transfer elements. For example, thermal transfer using
thermal transfer element 100 in FIG. 1A whereintransfer layer 110 comprises three layers of polymers of suitable indices of refraction could be used to form a waveguide on a receptor substrate. Since it forms the core of the waveguide, the central polymer layer of the transfer layer typically has an index of refraction slightly greater than the outer two layers. Examples of core/cladding combinations include, but are not limited to, polyetherimide/benzocyclobutene, polycarbonate/fluorinated acrylic, polycarbonate/polymethylmethacrylate and fluorinated polyimide/polymethylmethacrylate. - Thermal transfer of portions of an optical waveguide using a thermal transfer element may also be utilized to form an optical waveguide. For example, a receptor substrate could be coated with a cladding polymer such as polymethylmethacrylate by conventional methods or by a separate thermal transfer element and thermal transfer step. Subsequent thermal transfer of a polymethylmethacrylate/polycarbonate bilayer to the receptor substrate forms a waveguide having a polycarbonate core and polymethylmethacrylate cladding.
- Receptor
- The receptor substrate may be any item suitable for a particular application including, but not limited to, transparent films, display black matrices, passive and active portions of electronic displays, metals, semiconductors, glass, various papers, and plastics. Non-limiting examples of receptor substrates which can be used in the present invention include anodized aluminum and other metals, plastic films (e.g., polyethylene terephthalate, polypropylene), indium tin oxide coated plastic films, glass, indium tin oxide coated glass, flexible circuitry, circuit boards, silicon or other semiconductors, and a variety of different types of paper (e.g., filled or unfilled, calendered, or coated). Various layers (e.g., an adhesive layer) may be coated onto the receptor substrate to facilitate transfer of the transfer layer to the receptor substrate. Other layers may be coated on the receptor substrate to form a portion of a multilayer device. For example, an OEL or other electronic device may be formed using a receptor substrate having a metal anode or cathode formed on the receptor substrate prior to transfer of the transfer layer from the thermal transfer element. This metal anode or cathode may be formed, for example, by deposition of a conductive layer on the receptor substrate and patterning of the layer into one or more anodes or cathodes using, for example, photolithographic techniques.
- Operation
- During imaging, the thermal transfer element is typically brought into intimate contact with a receptor. In at least some instances, pressure or vacuum are used to hold the thermal transfer element in intimate contact with the receptor. A radiation source is then used to heat the LTHC layer (and/or other layer(s) containing radiation absorber) in an imagewise fashion (e.g., digitally or by analog exposure through a mask) to perform imagewise transfer of the transfer layer from the thermal transfer element to the receptor according to a pattern.
- Alternatively, a heating element, such as a resistive heating element, may be used to transfer the multicomponent transfer unit. The thermal transfer element is selectively contacted with the heating element to cause thermal transfer of a portion of the transfer layer according to a pattern. In another embodiment, the thermal transfer element may include a layer that can convert an electrical current applied to the layer into heat.
- Typically, the transfer layer is transferred to the receptor without transferring any of the other layers of the thermal transfer element, such as the optional interlayer and the LTHC layer. The presence of the optional interlayer may eliminate or reduce the transfer of the LTHC layer to the receptor and/or reduce distortion in the transferred portion of the transfer layer. Preferably, under imaging conditions, the adhesion of the interlayer to the LTHC layer is greater than the adhesion of the interlayer to the transfer layer. In some instances, a reflective interlayer can be used to attenuate the level of imaging radiation transmitted through the interlayer and reduce any damage to the transferred portion of the transfer layer that may result from interaction of the transmitted radiation with the transfer layer and/or the receptor. This is particularly beneficial in reducing thermal damage which may occur when the receptor is highly absorptive of the imaging radiation.
- During laser exposure, it may be desirable to minimize formation of interference patterns due to multiple reflections from the imaged material. This can be accomplished by various methods. The most common method is to effectively roughen the surface of the thermal transfer element on the scale of the incident radiation as described in U.S. Pat. No. 5,089,372. This has the effect of disrupting the spatial coherence of the incident radiation, thus minimizing self interference. An alternate method is to employ an antireflection coating within the thermal transfer element. The use of anti-reflection coatings is known, and may consist of quarter-wave thicknesses of a coating such as magnesium fluoride, as described in U.S. Pat No. 5,171,650, incorporated herein by reference.
- Large thermal transfer elements can be used, including thermal transfer elements that have length and width dimensions of a meter or more. In operation, a laser can be rastered or otherwise moved across the large thermal transfer element, the laser being selectively operated to illuminate portions of the thermal transfer element according to a desired pattern. Alternatively, the laser may be stationary and the thermal transfer element moved beneath the laser.
- In some instances, it may be necessary, desirable, and/or convenient to sequentially use two or more different thermal transfer elements to form a device. For example, one thermal transfer element may be used to form a gate electrode of a field effect transistor and another thermal transfer element may be used to form the gate insulating layer and semiconducting layer, and yet another thermal transfer layer may be used to form the source and drain contacts. A variety of other combinations of two or more thermal transfer elements can be used to form a device, each thermal transfer element forming one or more layers of the device. Each of these thermal transfer elements may include a multicomponent transfer unit or may only include a single layer for transfer to the receptor. The two or more thermal transfer units are then sequentially used to deposit one or more layers of the device. In some instances, at least one of the two or more thermal transfer elements includes a multicomponent transfer unit.
- Unless otherwise indicated, chemicals were obtained from Aldrich Chemical Company (Milwaukee, Wis.). All of the vacuum deposited materials were thermally evaporated and deposited at room temperature. The deposition rate and thickness of each vacuum deposited layer was monitored with a quartz crystal microbalance (Leybold Inficon Inc., East Syracuse, N.Y.). The background pressure (chamber pressure prior to the deposition) was roughly 1×10−5 torr (1.3×10−3 Pa).
- The laser transfer system included a CW Nd:YAG laser, acousto-optic modulator, collimating and beam expanding optics, an optical isolator, a linear galvonometer and an f-theta scan lens. The Nd:YAG laser was operating in the TEM 00 mode, and produced a total power of 7.5 Watts. Scanning was accomplished with a high precision linear galvanometer (Cambridge Technology Inc., Cambridge, Mass.). The laser was focused to a Gaussian spot with a measured diameter of 140 μm at the 1/e2 intensity level. The spot was held constant across the scan width by utilizing an f-theta scan lens. The laser spot was scanned across the image surface at a velocity of 5.6 meters/second. The f-theta scan lens held the scan velocity uniform to within 0.1%, and the spot size constant to within +3 microns.
- A carbon black light-to-heat conversion layer was prepared by coating the following LTHC Coating Solution, according to Table 1, onto a 0.1 mm PET substrate with a Yasui Seiki Lab Coater, Model CAG-150 (Yasui Seiki Co., Bloomington, Ind.) using a microgravure roll of 381 helical cells per lineal cm (150 helical cells per lineal inch).
TABLE 1 LTHC Coating Solution Parts by Component Weight Raven ™ 760 Ultra carbon black pigment (available 3.39 from Columbian Chemicals, Atlanta, GA) Butvar ™ B-98 (polyvinylbutyral resin, available from 0.61 Monsanto, St. Louis, MO) Joncryl ™ 67 (acrylic resin, available from S.C. 1.81 Johnson & Son, Racine, WI) Elvacite ™ 2669 (acrylic resin, available from ICI 9.42 Acrylics, Wilmington, DE) Disperbyk ™ 161 (dispersing aid, available from Byk 0.3 Chemie, Wallingford, CT) FC-430 ™ (fluorochemical surfactant, available from 0.012 3M, St. Paul, MN) Ebecryl ™ 629 (epoxy novolac acrylate, available from 14.13 UCB Radcure, N. Augusta, SC) Irgacure ™ 369 (photocuring agent, available from Ciba 0.95 Specialty Chemicals, Tarrytown, NY) Irgacure ™ 184 (photocuring agent, available from Ciba 0.14 Specialty Chemicals, Tarrytown, NY) propylene glycol methyl ether acetate 16.78 1-methoxy-2-propanol 9.8 methyl ethyl ketone 42.66 - The coating was in-line dried at 40° C. and UV-cured at 6.1 m/min using a Fusion Systems Model 1600 (400 W/in) UV curing system fitted with H-bulbs (Fusion UV Systems, Inc., Gaithersburg, Md.). The dried coating had a thickness of approximately 3 microns.
- Onto the carbon black coating of the light-to-heat conversion layer was rotogravure coated an Interlayer Coating Solution, according to Table 2, using the Yasui Seiki Lab Coater, Model CAG-150 (Yasui Seiki Co., Bloomington, Ind.). This coating was in-line dried (40° C.) and UV-cured at 6.1 rn/min using a Fusion Systems Model I600 (600 W/in) fitted with H-bulbs. The thickness of the resulting interlayer coating was approximately 1.7 microns.
TABLE 2 Interlayer Coating Solution Parts by Component Weight Butvar ™ B-98 0.98 Joncryl ™ 67 2.95 Sartomer ™ SR351 ™ (trimethylolpropane 15.75 triacrylate, available from Sartomer, Exton, PA) Irgacure ™ 369 1.38 Irgacure ™ 1840.2 1-methoxy-2-propanol 31.5 methyl ethyl ketone 47.24 - A carbon black light-to-heat conversion layer was prepared by coating the following LTHC Coating Solution, according to Table 3, onto a 0.1 mm PET substrate with a Yasui Seiki Lab Coater, Model CAG-150 (Yasui Seiki Co., Bloomington, Ind.) using a microgravure roll of 228.6 helical cells per lineal cm (90 helical cells per lineal inch).
TABLE 3 LTHC Coating Solution Parts by Component Weight Raven ™ 760 Ultra carbon black pigment (available 3.78 from Columbian Chemicals, Atlanta, GA) Butvar ™ B-98 (polyvinylbutyral resin, available 0.67 from Monsanto, St. Louis, MO) Joncryl ™ 67 (acrylic resin, available from S.C. 2.02 Johnson & Son, Racine, WI) Disperbyk ™ 161 (dispersing aid, available from Byk 0.34 Chemie, Wallingford, CT) FC-430 ™ (fluorochemical surfactant, available from 0.01 3M, St. Paul, MN) SR 351 ™ (trimethylolpropane triacrylate, available 22.74 from Sartomer, Exton, PA) Duracure ™ 1173 (2-hydroxy-2-methyl-1-phenyl-1- 1.48 propanone photoinitiator, available from Ciba, Hawthorne, NY) 1-methoxy-2-propanol 27.59 ethyl ethyl ketone 41.38 - The coating was in-line dried at 40° C. and UV-cured at 6.1 m/min using a Fusion Systems Model 1600 (400 W/in) UV curing system fitted with H-bulbs. The dried coating had a thickness of approximately 3 microns.
- Onto the carbon black coating of the light-to-heat conversion layer was rotogravure coated an Interlayer Coating Solution, according to Table 4, using the Yasui Seiki Lab Coater, Model CAG-150 (Yasui Seiki Co., Bloomington, Ind.). This coating was in-line dried (40° C.) and UV-cured at 6.1 m/min using a Fusion Systems Model 1600 (600 W/in) fitted with H-bulbs. The thickness of the resulting interlayer coating was approximately 1.7 microns.
TABLE 4 Interlayer Coating Solution Parts by Component Weight Butvar ™ B-98 0.99 Joncryl ™ 67 2.97 SR 351 ™ 15.84 Duracure ™ 1173 0.99 1-methoxy-2-propanol 31.68 methyl ethyl ketone 47.52 - A thermal donor element with a multicomponent transfer layer was prepared by applying coatings to the substrate/LTHC/interlayer element of Example 2. A coating of acrylic polymer (Elvacite™ 2776, ICI Acrylics, Wilmington, Del.) was applied to the interlayer of the thermal transfer element using a 5 wt. % aqueous solution of polymer with a #6 Mayer bar. The coating was dried at about 60° C. for about 5 minutes. A 500 Å coating of gold was then vacuum deposited over the acrylic polymer. Another coating of acrylic polymer (Elvacitem 2776, ICI Acrylics) was coated over the gold layer by applying a 5 wt. % aqueous solution of polymer with a #6 Mayer bar. The coating was dried at about 60° C. for about 5 minutes. The sample was imaged onto a glass receptor using a linear scan speed of 5.6 m/s. The result was a uniform transfer of the polymer/gold/polymer transfer layer as 70 micron wide lines with excellent edge uniformity.
- A thermal donor element with a multicomponent transfer layer was prepared by applying coatings to the substrate/LTHC/interlayer element of Example 2. A coating of acrylic polymer (Elvacite™ 2776, ICI Acrylics) was applied to the interlayer of the thermal transfer element using a 5 wt. % aqueous solution of polymer with a #6 Mayer bar. The coating was dried at about 60° C. for about 5 minutes. A 500 Å coating of tin was vacuum deposited on top of the acrylic polymer. A 500 Å coating of gold was then vacuum deposited on the tin. Then, a second 500 Å coating of tin was vacuum deposited on the gold. A second coating of acrylic polymer (Elvacite™ 2776, ICI Acrylics) was prepared by applying a 5 wt. % aqueous solution of polymer with a #6 Mayer bar. The coating was dried at about 60° C. for about 5 minutes. The thermal transfer element was imaged onto a glass receptor using a linear scan speed of 5.6 m/s. The result was a uniform transfer of a polymer/tin/gold/tin/polymer film as 70 micron wide lines with excellent edge uniformity.
- A hole transport thermal transfer element was formed using the substrate/LTHC/interlayer element of Example 1. A hole transport coating solution, formed by mixing the components of Table 5, was coated onto the interlayer using a #6 Mayer bar. The coating was dried for 10 min at 60° C.
TABLE 5 Hole Transport Coating Solution Weight Component (g) N,N′-bis(3-methylphenyl)-N,N′- 2.5 diphenylbenzidine polyvinylcarbazole 2.5 cyclohexanone 97.5 propylene glycol methyl ether acetate 97.5 (PGMEA) - An OEL thermal transfer element with a multicomponent transfer layer was prepared by applying coatings to a substrate/LTHC/interlayer element formed according to Example 1. A 200 Å layer of copper phthalocyanine was deposited on the interlayer as a semiconducting release layer. Next, a 250 Å layer of aluminum was deposited as a cathode layer. A 10 Å layer of lithium fluoride was deposited on the aluminum. Next, a 300 Å layer of tris(8-hydroxyquinolinato) aluminum (ALQ) was deposited as an electron transport layer. Finally, a 200 Å layer of N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD) was deposited as a hole transport layer.
- A receptor substrate of glass covered with indium tin oxide (ITO) (10 Ω/square, Thin Film Devices Inc., Anaheim, Calif.) was used to form the anode of the OEL device. First, the Hole Transport thermal transfer element of Example 5 was imaged onto the receptor. This was followed by imaging of the OEL thermal transfer element of Example 6 to complete the OEL device.
- In each transfer, the transfer layer side of the thermal transfer element was held in intimate contact with the receptor in a vacuum chuck. A laser was directed to be incident upon the substrate side of the thermal transfer elements. The exposures were performed so that the two transfer layers were transferred with correct registration. This produced 120 μm wide lines. The final OEL device had layers in the following order (from top to bottom):
- Aluminum Cathode
- Lithium Fluoride
- ALQ Electron Transport Layer/Emitter
- TPD Hole Transport Layer (from OEL thermal transfer element)
- TPD Hole Transport Layer (from Hole Transport thermal transfer element)
- Glass Receptor
- Electrical contact was made at the ITO anode and the aluminum cathode. When a potential was applied, the OEL device produced visually detectable light. The injection current was monitored as a function of the applied potential (voltage) which was continuously swept from 0 volts to 10-30 volts. At one point 70 μA at 10 volts flowing through a 42 mm×80 μm device was measured. This corresponds to a current density of about 2 mA/cm2. The current density is well within the normal operating range of small molecule devices fabricated directly onto a receptor substrate using conventional techniques.
- An OEL thermal transfer element with a multicomponent transfer layer was prepared by applying coatings to a substrate/LTHC/interlayer element prepared according to Example 1. A primer solution A, according to Table 6, was first coated using a #3 Mayer bar. The coating was dried at about 60° C. for about 5 minutes.
TABLE 6 Primer Solution Component Source Weight (g) PVP K-90 (polyvinyl International Specialty 2 pyrrolidone) Products (Wayne, NJ) PVA Gohsenol KL-03 Nippon Gohsei (Osaka, 2 (polyvinyl alcohol) Japan) Elvacite 2776 (acrylic polymer) ICI Acrylics 4 DMEA (dimethylethanolamine) Aldrich 0.8 2-butoxyethanol Aldrich 0.8 deionized water — 150.4 - A 200 Å layer of copper phthalocyanine was deposited as a semiconducting release layer on the primer layer. Next, a 250 Å layer of aluminum was deposited as a cathode layer. A 10 Å layer of lithium fluoride was deposited on the aluminum. Next, a 300 Å layer of tris(8-hydroxyquinolinato) aluminum (ALQ) was deposited as an electron transport layer. Finally, a 200 Å layer of N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD) was deposited as a hole transport layer.
- The receptor substrate consisted of a piece of 4 mil (about 100 μm) polyethyleneterephthalate (PET) film (unprimed HPE100,Teijin Ltd., Osaka, Japan). First, the Hole Transport thermal transfer element of Example 5 was imaged onto the receptor. Then the OEL thermal transfer element of Example 8 was imaged onto the hole transport layer.
- In each transfer, the transfer layer side of the thermal transfer element was held in intimate contact with the receptor in a vacuum chuck. A laser was directed to be incident upon the substrate side of the thermal transfer elements. The exposures were performed so that the two layers with correct registration. This produced 120 μm wide lines. The final construction had layers in the following order (from top to bottom):
- Aluminum Cathode
- Lithium Fluoride
- ALQ Electron Transport Layer/Emitter
- TPD Hole Transport Layer (from OEL Thermal Transfer Element)
- TPD Hole Transport Layer (from Hole Transport thermal transfer element)
- PET Receptor
- The present invention should not be considered limited to the particular examples described above, but rather should be understood to cover all aspects of the invention as fairly set out in the attached claims. Various modifications, equivalent processes, as well as numerous structures to which the present invention may be applicable will be readily apparent to those of skill in the art to which the present invention is directed upon review of the instant specification.
Claims (13)
1. A device disposed on a receptor substrate, comprising:
a first active layer and a second active layer formed by transferring a multicomponent transfer unit from a thermal transfer element comprising the multicomponent transfer unit and a substrate.
2. The device of , wherein the device is an organic electroluminescent device.
claim 1
3. The device of , wherein the first active layer is a light producing layer.
claim 2
4. The device of , wherein the first active layer comprises a light emitting polymer.
claim 2
5. The device of , wherein the first active layer comprises a small molecule emitter.
claim 2
6. The device of , wherein the second active layer is a charge conducting layer.
claim 3
7. The device of , wherein the second active layer is a charge semiconducting layer.
claim 3
8. The device of , wherein the second active layer is a charge producing layer.
claim 3
9. The device of , wherein the second active layer is a light producing layer.
claim 3
10. The device of , wherein the first active layer is a light emitting layer and the second active layer is a fluorescing or phosphorescing layer.
claim 2
11. The device of , wherein the device is an organic transistor, the first active layer is a charge conducting layer, and the second active layer is a charge semiconducting layer.
claim 1
12. The device of , wherein the device is an organic laser and the first active layer is a light producing layer.
claim 1
13. An optical display comprising a plurality of organic electroluminescent devices disposed on a receptor substrate, at least one of the organic electroluminescent devices comprising a first active layer and a second active layer formed by transferring a multicomponent transfer unit from a thermal transfer element comprising the multicomponent transfer unit and a substrate.
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US09/785,721 US20010036561A1 (en) | 1999-01-15 | 2001-02-16 | Multilayer devices formed by multilayer thermal transfer |
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US6114088A (en) * | 1999-01-15 | 2000-09-05 | 3M Innovative Properties Company | Thermal transfer element for forming multilayer devices |
US6468638B2 (en) | 1999-03-16 | 2002-10-22 | Alien Technology Corporation | Web process interconnect in electronic assemblies |
TW465119B (en) * | 1999-07-23 | 2001-11-21 | Semiconductor Energy Lab | EL display device and a method of manufacturing the same |
JP4472056B2 (en) * | 1999-07-23 | 2010-06-02 | 株式会社半導体エネルギー研究所 | Electroluminescence display device and manufacturing method thereof |
US6214151B1 (en) * | 1999-11-05 | 2001-04-10 | International Business Machines Corporation | Thermal dye transfer process for preparing opto-electronic devices |
US6284425B1 (en) * | 1999-12-28 | 2001-09-04 | 3M Innovative Properties | Thermal transfer donor element having a heat management underlayer |
JP3456461B2 (en) * | 2000-02-21 | 2003-10-14 | Tdk株式会社 | Patterning method, thin-film device manufacturing method, and thin-film magnetic head manufacturing method |
US6936485B2 (en) * | 2000-03-27 | 2005-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a light emitting device |
US6852994B2 (en) * | 2000-03-31 | 2005-02-08 | Seiko Epson Corporation | Organic EL device and method of manufacturing organic EL device |
JP2001341296A (en) * | 2000-03-31 | 2001-12-11 | Seiko Epson Corp | Method for forming thin film by ink jet, ink jet unit, organic el element, and method for manufacturing the same |
US6692845B2 (en) * | 2000-05-12 | 2004-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
DE10033112C2 (en) * | 2000-07-07 | 2002-11-14 | Siemens Ag | Process for the production and structuring of organic field-effect transistors (OFET), OFET produced thereafter and its use |
US6867539B1 (en) * | 2000-07-12 | 2005-03-15 | 3M Innovative Properties Company | Encapsulated organic electronic devices and method for making same |
US6906458B2 (en) * | 2000-08-11 | 2005-06-14 | Seiko Epson Corporation | Method for manufacturing organic EL device, organic EL device and electronic apparatus |
JP2004507096A (en) * | 2000-08-18 | 2004-03-04 | シーメンス アクチエンゲゼルシヤフト | Organic field effect transistor (OFET), method of manufacturing the organic field effect transistor, integrated circuit formed from the organic field effect transistor, and use of the integrated circuit |
US7875975B2 (en) * | 2000-08-18 | 2011-01-25 | Polyic Gmbh & Co. Kg | Organic integrated circuit completely encapsulated by multi-layered barrier and included in RFID tag |
US20030168158A1 (en) * | 2000-08-22 | 2003-09-11 | Takeyoshi Kato | Method of film laminating |
KR100342653B1 (en) * | 2000-08-24 | 2002-07-03 | 김순택 | Method for manufacturing organic electroluminescence device |
US7588795B2 (en) * | 2000-08-24 | 2009-09-15 | Samsung Mobile Display Co., Ltd. | Manufacturing method of OLED display and apparatus for manufacturing the OLED display |
DE10043204A1 (en) * | 2000-09-01 | 2002-04-04 | Siemens Ag | Organic field-effect transistor, method for structuring an OFET and integrated circuit |
US6699728B2 (en) * | 2000-09-06 | 2004-03-02 | Osram Opto Semiconductors Gmbh | Patterning of electrodes in oled devices |
DE10044842A1 (en) * | 2000-09-11 | 2002-04-04 | Siemens Ag | Organic rectifier, circuit, RFID tag and use of an organic rectifier |
DE10045192A1 (en) * | 2000-09-13 | 2002-04-04 | Siemens Ag | Organic data storage, RFID tag with organic data storage, use of an organic data storage |
US6855384B1 (en) * | 2000-09-15 | 2005-02-15 | 3M Innovative Properties Company | Selective thermal transfer of light emitting polymer blends |
US6358664B1 (en) | 2000-09-15 | 2002-03-19 | 3M Innovative Properties Company | Electronically active primer layers for thermal patterning of materials for electronic devices |
WO2002025750A1 (en) * | 2000-09-22 | 2002-03-28 | Siemens Aktiengesellschaft | Electrode and/or conductor track for organic components and production method therefor |
JP2005032735A (en) * | 2000-09-25 | 2005-02-03 | Dainippon Printing Co Ltd | Electroluminescent element |
JP3906020B2 (en) * | 2000-09-27 | 2007-04-18 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
CN1302297C (en) | 2000-10-12 | 2007-02-28 | 三洋电机株式会社 | Method for forming color filter, method for forming light lkight emitting element layer, method for manufacturing color display device comprising them, or color dispaly device |
US7042152B2 (en) * | 2000-10-17 | 2006-05-09 | Samsung Sdi Co., Ltd. | Organic electroluminescence device including oxygen in an interface between organic layer and cathode |
US7507453B2 (en) * | 2000-10-31 | 2009-03-24 | International Imaging Materials, Inc | Digital decoration and marking of glass and ceramic substrates |
US6796733B2 (en) | 2000-10-31 | 2004-09-28 | International Imaging Materials Inc. | Thermal transfer ribbon with frosting ink layer |
US6990904B2 (en) | 2000-10-31 | 2006-01-31 | International Imaging Materials, Inc | Thermal transfer assembly for ceramic imaging |
KR100779777B1 (en) * | 2000-11-02 | 2007-11-27 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | Brightness and contrast enhancement of direct view emissive displays |
JP2002158089A (en) * | 2000-11-21 | 2002-05-31 | Toppan Printing Co Ltd | Organic electroluminescent display element and its manufacturing method |
DE10061299A1 (en) | 2000-12-08 | 2002-06-27 | Siemens Ag | Device for determining and / or forwarding at least one environmental influence, production method and use thereof |
DE10061297C2 (en) * | 2000-12-08 | 2003-05-28 | Siemens Ag | Procedure for structuring an OFET |
EP1341672B1 (en) * | 2000-12-15 | 2007-07-25 | E. I. du Pont de Nemours and Company | Receiver element for adjusting the focus of an imaging laser |
DE10063721A1 (en) * | 2000-12-20 | 2002-07-11 | Merck Patent Gmbh | Organic semiconductor, manufacturing process therefor and uses |
JP2002252082A (en) * | 2000-12-21 | 2002-09-06 | Sony Corp | Display device and its manufacturing method |
DE10105914C1 (en) | 2001-02-09 | 2002-10-10 | Siemens Ag | Organic field effect transistor with photo-structured gate dielectric and a method for its production |
WO2002080195A1 (en) * | 2001-02-16 | 2002-10-10 | E.I. Dupont De Nemours And Company | High conductivity polyaniline compositions and uses therefor |
ATE540437T1 (en) | 2001-03-02 | 2012-01-15 | Fujifilm Corp | PRODUCTION METHOD OF AN ORGANIC THIN FILM DEVICE |
JP2005509200A (en) * | 2001-03-26 | 2005-04-07 | シーメンス アクチエンゲゼルシヤフト | Device having at least two organic electronic component elements and manufacturing method for the device |
US6485884B2 (en) * | 2001-04-27 | 2002-11-26 | 3M Innovative Properties Company | Method for patterning oriented materials for organic electronic displays and devices |
JP2003017264A (en) * | 2001-04-27 | 2003-01-17 | Canon Inc | Electroluminescent element and image display device |
JP2002343565A (en) | 2001-05-18 | 2002-11-29 | Sharp Corp | Manufacturing method of organic led display panel, organic led display panel manufactured by the same, and base film and substrate used for the same |
JP2002343564A (en) | 2001-05-18 | 2002-11-29 | Sharp Corp | Transfer film and manufacturing method of organic electroluminescence element using the same |
JP3969698B2 (en) | 2001-05-21 | 2007-09-05 | 株式会社半導体エネルギー研究所 | Method for manufacturing light emitting device |
US6606247B2 (en) * | 2001-05-31 | 2003-08-12 | Alien Technology Corporation | Multi-feature-size electronic structures |
DE10126860C2 (en) * | 2001-06-01 | 2003-05-28 | Siemens Ag | Organic field effect transistor, process for its manufacture and use for the construction of integrated circuits |
US20020197393A1 (en) * | 2001-06-08 | 2002-12-26 | Hideaki Kuwabara | Process of manufacturing luminescent device |
TW548860B (en) * | 2001-06-20 | 2003-08-21 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
US7211828B2 (en) | 2001-06-20 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic apparatus |
US6727970B2 (en) | 2001-06-25 | 2004-04-27 | Avery Dennison Corporation | Method of making a hybrid display device having a rigid substrate and a flexible substrate |
US6856086B2 (en) * | 2001-06-25 | 2005-02-15 | Avery Dennison Corporation | Hybrid display device |
US20030011108A1 (en) * | 2001-07-12 | 2003-01-16 | Matthies Dennis L. | Assembly display modules |
US20030030371A1 (en) * | 2001-08-13 | 2003-02-13 | Industrial Technology Research Institute | Organic light emitting backlight device for liquid crystal display |
SG135973A1 (en) * | 2001-08-16 | 2007-10-29 | 3M Innovative Properties Co | Method and materials for patterning of a polymerizable, amorphous matrix with electrically active material disposed therein |
US6699597B2 (en) * | 2001-08-16 | 2004-03-02 | 3M Innovative Properties Company | Method and materials for patterning of an amorphous, non-polymeric, organic matrix with electrically active material disposed therein |
JP4004254B2 (en) * | 2001-08-28 | 2007-11-07 | シャープ株式会社 | Manufacturing method of organic EL element |
JP2003077651A (en) * | 2001-08-30 | 2003-03-14 | Sharp Corp | Manufacturing method for organic electroluminescent element |
JP4345278B2 (en) * | 2001-09-14 | 2009-10-14 | セイコーエプソン株式会社 | PATTERNING METHOD, FILM FORMING METHOD, PATTERNING APPARATUS, ORGANIC ELECTROLUMINESCENCE ELEMENT MANUFACTURING METHOD, COLOR FILTER MANUFACTURING METHOD, ELECTRO-OPTICAL DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD |
SG111968A1 (en) * | 2001-09-28 | 2005-06-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
JP2003115377A (en) * | 2001-10-03 | 2003-04-18 | Nec Corp | Light emitting element, its manufacturing method, and display equipment using this |
US6951666B2 (en) * | 2001-10-05 | 2005-10-04 | Cabot Corporation | Precursor compositions for the deposition of electrically conductive features |
US20030108664A1 (en) * | 2001-10-05 | 2003-06-12 | Kodas Toivo T. | Methods and compositions for the formation of recessed electrical features on a substrate |
US7524528B2 (en) * | 2001-10-05 | 2009-04-28 | Cabot Corporation | Precursor compositions and methods for the deposition of passive electrical components on a substrate |
US7629017B2 (en) * | 2001-10-05 | 2009-12-08 | Cabot Corporation | Methods for the deposition of conductive electronic features |
GB0124595D0 (en) * | 2001-10-12 | 2001-12-05 | Savair & Aro Ltd | Pressure sensor |
DE10151036A1 (en) * | 2001-10-16 | 2003-05-08 | Siemens Ag | Isolator for an organic electronic component |
DE10151440C1 (en) * | 2001-10-18 | 2003-02-06 | Siemens Ag | Organic electronic component for implementing an encapsulated partially organic electronic component has components like a flexible foil as an antenna, a diode or capacitor and an organic transistor. |
JP4763237B2 (en) * | 2001-10-19 | 2011-08-31 | キャボット コーポレイション | Method for manufacturing a conductive electronic component on a substrate |
JP4009817B2 (en) * | 2001-10-24 | 2007-11-21 | セイコーエプソン株式会社 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
KR100478521B1 (en) * | 2001-10-29 | 2005-03-28 | 삼성에스디아이 주식회사 | Emitting composition mixture polymer and electroluminescence device using the same |
US7553512B2 (en) * | 2001-11-02 | 2009-06-30 | Cabot Corporation | Method for fabricating an inorganic resistor |
US6946676B2 (en) * | 2001-11-05 | 2005-09-20 | 3M Innovative Properties Company | Organic thin film transistor with polymeric interface |
US6737177B2 (en) * | 2001-11-08 | 2004-05-18 | Xerox Corporation | Red organic light emitting devices |
US8153184B2 (en) * | 2001-11-26 | 2012-04-10 | Samsung Mobile Display Co., Ltd. | Organic EL display device and method of manufacturing the same |
KR100656490B1 (en) * | 2001-11-26 | 2006-12-12 | 삼성에스디아이 주식회사 | Full Color OLED and Method for fabricating the Same |
US20030124265A1 (en) * | 2001-12-04 | 2003-07-03 | 3M Innovative Properties Company | Method and materials for transferring a material onto a plasma treated surface according to a pattern |
DE10160732A1 (en) * | 2001-12-11 | 2003-06-26 | Siemens Ag | OFET used e.g. in RFID tag, comprises an intermediate layer on an active semiconductor layer |
US6688365B2 (en) | 2001-12-19 | 2004-02-10 | Eastman Kodak Company | Method for transferring of organic material from a donor to form a layer in an OLED device |
JP2003187972A (en) * | 2001-12-20 | 2003-07-04 | Dainippon Printing Co Ltd | Manufacturing method of organic el element and organic el transferring body and transferred body |
US6555284B1 (en) | 2001-12-27 | 2003-04-29 | Eastman Kodak Company | In situ vacuum method for making OLED devices |
US6603141B2 (en) * | 2001-12-28 | 2003-08-05 | Motorola, Inc. | Organic semiconductor and method |
US20030180447A1 (en) * | 2002-01-18 | 2003-09-25 | Meth Jeffery Scott | Process for forming a multicolor display |
US6582875B1 (en) | 2002-01-23 | 2003-06-24 | Eastman Kodak Company | Using a multichannel linear laser light beam in making OLED devices by thermal transfer |
US7214569B2 (en) * | 2002-01-23 | 2007-05-08 | Alien Technology Corporation | Apparatus incorporating small-feature-size and large-feature-size components and method for making same |
US6541300B1 (en) * | 2002-01-28 | 2003-04-01 | Motorola, Inc. | Semiconductor film and process for its preparation |
US6610455B1 (en) | 2002-01-30 | 2003-08-26 | Eastman Kodak Company | Making electroluminscent display devices |
DE10203674A1 (en) * | 2002-01-30 | 2003-08-14 | Infineon Technologies Ag | Semiconductor module with an insulation layer and method for producing a semiconductor module with an insulation layer |
US6687274B2 (en) * | 2002-02-04 | 2004-02-03 | Eastman Kodak Company | Organic vertical cavity phase-locked laser array device |
US6674776B2 (en) | 2002-02-04 | 2004-01-06 | Eastman Kodak Company | Organic vertical cavity lasing devices containing periodic gain regions |
US7157142B2 (en) * | 2002-02-06 | 2007-01-02 | Fuji Photo Film Co., Ltd. | Method for producing organic, thin-film device and transfer material used therein |
US6841320B2 (en) * | 2002-02-06 | 2005-01-11 | Optiva, Inc. | Method of fabricating anisotropic crystal film on a receptor plate via transfer from the donor plate, the donor plate and the method of its fabrication |
US6649436B2 (en) * | 2002-02-11 | 2003-11-18 | Eastman Kodak Company | Using organic materials in making an organic light-emitting device |
CN1639246A (en) * | 2002-03-01 | 2005-07-13 | 纳幕尔杜邦公司 | Printing of organic conductive polymers containing additives |
JP4098536B2 (en) * | 2002-03-07 | 2008-06-11 | 大日本印刷株式会社 | Organic EL transfer body provided with pattern transfer layer, organic EL transferred body, and organic EL device manufacturing method |
US6703179B2 (en) | 2002-03-13 | 2004-03-09 | Eastman Kodak Company | Transfer of organic material from a donor to form a layer in an OLED device |
US7204425B2 (en) * | 2002-03-18 | 2007-04-17 | Precision Dynamics Corporation | Enhanced identification appliance |
WO2003079734A1 (en) * | 2002-03-20 | 2003-09-25 | Fuji Photo Film Co., Ltd. | Organic thin-film device and its production method |
DE10212639A1 (en) * | 2002-03-21 | 2003-10-16 | Siemens Ag | Device and method for laser structuring functional polymers and uses |
DE10212640B4 (en) * | 2002-03-21 | 2004-02-05 | Siemens Ag | Logical components made of organic field effect transistors |
US20030184892A1 (en) * | 2002-03-29 | 2003-10-02 | Ritek Corporation | Multi-layer mirror for a luminescent device and method for forming the same |
WO2003090502A2 (en) * | 2002-04-19 | 2003-10-30 | 3M Innovative Properties Company | Materials for organic electronic devices |
US7241512B2 (en) * | 2002-04-19 | 2007-07-10 | 3M Innovative Properties Company | Electroluminescent materials and methods of manufacture and use |
JP3787839B2 (en) * | 2002-04-22 | 2006-06-21 | セイコーエプソン株式会社 | Device manufacturing method, device and electronic apparatus |
US6879306B2 (en) | 2002-05-02 | 2005-04-12 | Eastman Kodak Company | Scanned display systems using color laser light sources |
US6566032B1 (en) * | 2002-05-08 | 2003-05-20 | Eastman Kodak Company | In-situ method for making OLED devices that are moisture or oxygen-sensitive |
JP2004031933A (en) * | 2002-05-09 | 2004-01-29 | Konica Minolta Holdings Inc | Method for manufacturing organic thin-film transistor, and organic thin-film transistor and organic transistor sheet manufactured using the same |
US6728278B2 (en) * | 2002-05-23 | 2004-04-27 | Eastman Kodak Company | Organic vertical cavity laser array device |
US6923881B2 (en) * | 2002-05-27 | 2005-08-02 | Fuji Photo Film Co., Ltd. | Method for producing organic electroluminescent device and transfer material used therein |
US7534498B2 (en) * | 2002-06-03 | 2009-05-19 | 3M Innovative Properties Company | Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body |
JP4565804B2 (en) * | 2002-06-03 | 2010-10-20 | スリーエム イノベイティブ プロパティズ カンパニー | Laminate including ground substrate, method for producing the same, method for producing ultrathin substrate using laminate, and apparatus therefor |
CN1703773B (en) * | 2002-06-03 | 2011-11-16 | 3M创新有限公司 | Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body |
US7326303B2 (en) * | 2002-06-03 | 2008-02-05 | Optoelectronics Systems Consulting Inc. | Single-pass growth of multilayer patterned electronic and photonic devices using a scanning localized evaporation methodology (SLEM) |
DE10226370B4 (en) * | 2002-06-13 | 2008-12-11 | Polyic Gmbh & Co. Kg | Substrate for an electronic component, use of the substrate, methods for increasing the charge carrier mobility and organic field effect transistor (OFET) |
US6811815B2 (en) | 2002-06-14 | 2004-11-02 | Avery Dennison Corporation | Method for roll-to-roll deposition of optically transparent and high conductivity metallic thin films |
US20040004433A1 (en) * | 2002-06-26 | 2004-01-08 | 3M Innovative Properties Company | Buffer layers for organic electroluminescent devices and methods of manufacture and use |
US6682863B2 (en) | 2002-06-27 | 2004-01-27 | Eastman Kodak Company | Depositing an emissive layer for use in an organic light-emitting display device (OLED) |
KR100478524B1 (en) * | 2002-06-28 | 2005-03-28 | 삼성에스디아이 주식회사 | Electroluminescence display device using mixture of high molecular and low molecular emitting material as emitting material |
WO2004017439A2 (en) | 2002-07-29 | 2004-02-26 | Siemens Aktiengesellschaft | Electronic component comprising predominantly organic functional materials and method for the production thereof |
US6939660B2 (en) * | 2002-08-02 | 2005-09-06 | Eastman Kodak Company | Laser thermal transfer donor including a separate dopant layer |
US6890627B2 (en) | 2002-08-02 | 2005-05-10 | Eastman Kodak Company | Laser thermal transfer from a donor element containing a hole-transporting layer |
EP1526902B1 (en) * | 2002-08-08 | 2008-05-21 | PolyIC GmbH & Co. KG | Electronic device |
US20040031965A1 (en) * | 2002-08-16 | 2004-02-19 | Forrest Stephen R. | Organic photonic integrated circuit using an organic photodetector and a transparent organic light emitting device |
KR100480442B1 (en) * | 2002-08-17 | 2005-04-06 | 한국과학기술연구원 | White organic light-emitting materials prepared by light-doping and electroluminescent devices using the same |
EP1548833A4 (en) * | 2002-08-19 | 2007-03-21 | Seiko Epson Corp | Ferroelectric memory and its manufacturing method |
US6695030B1 (en) | 2002-08-20 | 2004-02-24 | Eastman Kodak Company | Apparatus for permitting transfer of organic material from a donor web to form a layer in an OLED device |
US6690697B1 (en) | 2002-08-20 | 2004-02-10 | Eastman Kodak Company | Vertical cavity light-producing device with improved power conversion |
JP2005537637A (en) | 2002-08-23 | 2005-12-08 | ジーメンス アクツィエンゲゼルシャフト | Organic components and related circuits for overvoltage protection |
US6811938B2 (en) * | 2002-08-29 | 2004-11-02 | Eastman Kodak Company | Using fiducial marks on a substrate for laser transfer of organic material from a donor to a substrate |
US7094902B2 (en) * | 2002-09-25 | 2006-08-22 | 3M Innovative Properties Company | Electroactive polymers |
DE10245628A1 (en) * | 2002-09-30 | 2004-04-15 | Osram Opto Semiconductors Gmbh | Light-emitting semiconductor chip includes mirror layer with planar reflection surfaces inclined at acute angle with respect to main plane of beam production region |
EP1559147B1 (en) * | 2002-10-02 | 2014-11-12 | Leonhard Kurz Stiftung & Co. KG | Film comprising organic semiconductors |
US20040067302A1 (en) * | 2002-10-08 | 2004-04-08 | Eastman Kodak Company | Laser thermal transfer gap control for oled manufacturing |
US6963594B2 (en) | 2002-10-16 | 2005-11-08 | Eastman Kodak Company | Organic laser cavity device having incoherent light as a pumping source |
US6970488B2 (en) * | 2002-10-16 | 2005-11-29 | Eastman Kodak Company | Tunable organic VCSEL system |
US6869185B2 (en) * | 2002-10-16 | 2005-03-22 | Eastman Kodak Company | Display systems using organic laser light sources |
US6853660B2 (en) * | 2002-10-16 | 2005-02-08 | Eastman Kodak Company | Organic laser cavity arrays |
US6845114B2 (en) | 2002-10-16 | 2005-01-18 | Eastman Kodak Company | Organic laser that is attachable to an external pump beam light source |
JP2004152958A (en) * | 2002-10-30 | 2004-05-27 | Pioneer Electronic Corp | Organic semiconductor device |
US6855636B2 (en) * | 2002-10-31 | 2005-02-15 | 3M Innovative Properties Company | Electrode fabrication methods for organic electroluminscent devices |
US7195036B2 (en) * | 2002-11-04 | 2007-03-27 | The Regents Of The University Of Michigan | Thermal micro-valves for micro-integrated devices |
US20060118778A1 (en) * | 2002-11-05 | 2006-06-08 | Wolfgang Clemens | Organic electronic component with high-resolution structuring and method for the production thereof |
JP2005005245A (en) * | 2002-11-08 | 2005-01-06 | Fuji Photo Film Co Ltd | Transfer method of transfer material, shape transfer method and transfer device |
DE10253154A1 (en) * | 2002-11-14 | 2004-05-27 | Siemens Ag | Biosensor, used to identify analyte in liquid sample, has test field with detector, where detector registers field changes as electrical signals for evaluation |
US6947459B2 (en) * | 2002-11-25 | 2005-09-20 | Eastman Kodak Company | Organic vertical cavity laser and imaging system |
US6918982B2 (en) * | 2002-12-09 | 2005-07-19 | International Business Machines Corporation | System and method of transfer printing an organic semiconductor |
US7176484B2 (en) * | 2002-12-09 | 2007-02-13 | International Business Machines Corporation | Use of an energy source to convert precursors into patterned semiconductors |
JP2004200221A (en) * | 2002-12-16 | 2004-07-15 | Toray Eng Co Ltd | Laser marking method and device thereof |
CN1298551C (en) * | 2002-12-17 | 2007-02-07 | 乐金电子(天津)电器有限公司 | Structure of printed layer of printed film sticked on surface of appliance product |
US20040191564A1 (en) * | 2002-12-17 | 2004-09-30 | Samsung Sdi Co., Ltd. | Donor film for low molecular weight full color organic electroluminescent device using laser induced thermal imaging method and method for fabricating low molecular weight full color organic electroluminescent device using the film |
US6975067B2 (en) * | 2002-12-19 | 2005-12-13 | 3M Innovative Properties Company | Organic electroluminescent device and encapsulation method |
US6777025B2 (en) * | 2002-12-20 | 2004-08-17 | Eastman Kodak Company | Tensioning unrolled donor substrate to facilitate transfer of organic material |
AU2003289345A1 (en) * | 2002-12-25 | 2004-07-22 | Semiconductor Energy Laboratory Co., Ltd. | High-molecular compounds, electroluminescents and light emitting devices |
US7052351B2 (en) * | 2002-12-31 | 2006-05-30 | Eastman Kodak Company | Using hole- or electron-blocking layers in color OLEDS |
US20060125061A1 (en) * | 2003-01-09 | 2006-06-15 | Wolfgang Clemens | Board or substrate for an organic electronic device and use thereof |
US6870868B2 (en) * | 2003-02-18 | 2005-03-22 | Eastman Kodak Company | Organic laser having improved linearity |
US7297460B2 (en) * | 2003-02-26 | 2007-11-20 | Agfa-Gevaert | Radiation curable ink compositions suitable for ink-jet printing |
US6781056B1 (en) * | 2003-02-28 | 2004-08-24 | Motorola, Inc. | Heater for temperature control integrated in circuit board and method of manufacture |
US7064748B2 (en) * | 2003-03-11 | 2006-06-20 | Eastman Kodak Company | Resistive touch screen with variable resistivity layer |
US6999484B2 (en) | 2003-03-18 | 2006-02-14 | Eastman Kodak Company | Parallel access data storage system using a combination of VCSEL arrays and an integrated solid immersion lens array |
US6790594B1 (en) | 2003-03-20 | 2004-09-14 | Eastman Kodak Company | High absorption donor substrate coatable with organic layer(s) transferrable in response to incident laser light |
US7082147B2 (en) * | 2003-03-24 | 2006-07-25 | Eastman Kodak Company | Organic fiber laser system and method |
US6950454B2 (en) * | 2003-03-24 | 2005-09-27 | Eastman Kodak Company | Electronic imaging system using organic laser array illuminating an area light valve |
US7253735B2 (en) | 2003-03-24 | 2007-08-07 | Alien Technology Corporation | RFID tags and processes for producing RFID tags |
US7271406B2 (en) * | 2003-04-15 | 2007-09-18 | 3M Innovative Properties Company | Electron transport agents for organic electronic devices |
US7192657B2 (en) * | 2003-04-15 | 2007-03-20 | 3M Innovative Properties Company | Ethynyl containing electron transport dyes and compositions |
US6703180B1 (en) | 2003-04-16 | 2004-03-09 | Eastman Kodak Company | Forming an improved stability emissive layer from a donor element in an OLED device |
US20040206307A1 (en) * | 2003-04-16 | 2004-10-21 | Eastman Kodak Company | Method and system having at least one thermal transfer station for making OLED displays |
JP4578065B2 (en) * | 2003-05-07 | 2010-11-10 | 大日本印刷株式会社 | Organic thin film solar cell manufacturing method and transfer sheet |
TW594358B (en) * | 2003-05-13 | 2004-06-21 | Ind Tech Res Inst | Method for manufacturing electrophoretic display |
US6703184B1 (en) * | 2003-05-22 | 2004-03-09 | Eastman Kodak Company | Low moisture donor substrate coatable with organic layers transferrable in response in incident radiation |
DE10323889A1 (en) * | 2003-05-27 | 2004-12-16 | Ehrfeld Mikrotechnik Ag | Rolling bearings with polymer electronics |
US7494896B2 (en) | 2003-06-12 | 2009-02-24 | International Business Machines Corporation | Method of forming magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer |
JP2007525011A (en) * | 2003-06-26 | 2007-08-30 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | Method for forming a pattern of filled dielectric material on a substrate |
US7053412B2 (en) * | 2003-06-27 | 2006-05-30 | The Trustees Of Princeton University And Universal Display Corporation | Grey scale bistable display |
GB0316395D0 (en) * | 2003-07-12 | 2003-08-13 | Hewlett Packard Development Co | A transistor device with metallic electrodes and a method for use in forming such a device |
DE10334921A1 (en) * | 2003-07-24 | 2005-02-17 | Technische Universität Dresden | Disyplay of organic light-emitting diodes and method for its production |
JP2005064143A (en) * | 2003-08-08 | 2005-03-10 | Seiko Epson Corp | Method of forming resist pattern, method of forming wiring pattern, method of manufacturing semiconductor device, electrooptic device, and electronic equipment |
KR100543000B1 (en) * | 2003-08-18 | 2006-01-20 | 삼성에스디아이 주식회사 | Donor film for full color organic electroluminescent display device, method thereof, and full color organic electroluminescent display device using the same as donor film |
US7180089B2 (en) * | 2003-08-19 | 2007-02-20 | National Taiwan University | Reconfigurable organic light-emitting device and display apparatus employing the same |
DE10338277A1 (en) * | 2003-08-20 | 2005-03-17 | Siemens Ag | Organic capacitor with voltage controlled capacity |
US7275972B2 (en) * | 2003-08-22 | 2007-10-02 | 3M Innovative Properties Company | Method of making an electroluminescent device having a patterned emitter layer and non-patterned emitter layer |
DE10339036A1 (en) | 2003-08-25 | 2005-03-31 | Siemens Ag | Organic electronic component with high-resolution structuring and manufacturing method |
TW589506B (en) * | 2003-08-28 | 2004-06-01 | Ind Tech Res Inst | The manufacturing method for an electrophoretic display |
KR100973811B1 (en) * | 2003-08-28 | 2010-08-03 | 삼성전자주식회사 | Thin film transistor array panel using organic semiconductor and manufacturing method thereof |
KR100552964B1 (en) * | 2003-08-28 | 2006-02-15 | 삼성에스디아이 주식회사 | donor film for flat panel display device and method of fabricating OLED using the same |
DE10340644B4 (en) * | 2003-09-03 | 2010-10-07 | Polyic Gmbh & Co. Kg | Mechanical controls for organic polymer electronics |
DE10340643B4 (en) * | 2003-09-03 | 2009-04-16 | Polyic Gmbh & Co. Kg | Printing method for producing a double layer for polymer electronics circuits, and thereby produced electronic component with double layer |
US6929048B2 (en) * | 2003-09-05 | 2005-08-16 | Eastman Kodak Company | Laser transfer of organic material from a donor to form a layer in an OLED device |
US20080081105A1 (en) * | 2003-09-22 | 2008-04-03 | Samsung Sdi Co., Ltd. | Method of fabricating full color organic light-emtting device having color modulation layer using liti method |
US7294372B2 (en) * | 2003-10-01 | 2007-11-13 | Eastman Kodak Company | Conductive color filters |
JP2005150235A (en) * | 2003-11-12 | 2005-06-09 | Three M Innovative Properties Co | Semiconductor surface protection sheet and method therefor |
KR100611145B1 (en) * | 2003-11-25 | 2006-08-09 | 삼성에스디아이 주식회사 | Donor film for full color organic electroluminescent display device, method thereof, and full color organic electroluminescent display device using the same as donor film |
JP4405246B2 (en) * | 2003-11-27 | 2010-01-27 | スリーエム イノベイティブ プロパティズ カンパニー | Manufacturing method of semiconductor chip |
US7682590B2 (en) * | 2003-11-27 | 2010-03-23 | National Institute Of Advanced Industrial Science And Technology | Carbon nanotube dispersed polar organic solvent and method for producing the same |
KR100563059B1 (en) | 2003-11-28 | 2006-03-24 | 삼성에스디아이 주식회사 | Electroluminescence display device and laser induced thermal imaging donor film for the electroluminescence display device |
KR100635051B1 (en) * | 2003-11-29 | 2006-10-17 | 삼성에스디아이 주식회사 | Full colour organo electroluminescence display devices by thermal patterning using lazer and method for manufacturing thereof |
KR100686342B1 (en) * | 2003-11-29 | 2007-02-22 | 삼성에스디아이 주식회사 | Thermal Transfer Element with LTHC having gradient concentration |
KR100667062B1 (en) * | 2003-11-29 | 2007-01-10 | 삼성에스디아이 주식회사 | Donor film for laser induced thermal imaging method and electroluminescence display device manufactured using the same film |
KR100611156B1 (en) * | 2003-11-29 | 2006-08-09 | 삼성에스디아이 주식회사 | Donor film for laser induced thermal imaging method and electroluminescence display device manufactured using the same film |
US7229726B2 (en) * | 2003-12-02 | 2007-06-12 | E. I. Du Pont De Nemours And Company | Thermal imaging process and products made therefrom |
US6908240B1 (en) * | 2003-12-16 | 2005-06-21 | International Imaging Materials, Inc | Thermal printing and cleaning assembly |
KR100579174B1 (en) * | 2003-12-22 | 2006-05-11 | 삼성에스디아이 주식회사 | Donor film for laser induced thermal imaging method and electroluminescence display device manufactured using the same film |
US20050156512A1 (en) * | 2003-12-30 | 2005-07-21 | Vadim Savvateev | Electroluminescent devices with at least one electrode having apertures and methods of using such devices |
US20050145326A1 (en) * | 2004-01-05 | 2005-07-07 | Eastman Kodak Company | Method of making an OLED device |
DE102004002024A1 (en) * | 2004-01-14 | 2005-08-11 | Siemens Ag | Self-aligning gate organic transistor and method of making the same |
US20050165148A1 (en) * | 2004-01-28 | 2005-07-28 | Bogerd Jos V.D. | Infra-red radiation absorption articles and method of manufacture thereof |
KR100712096B1 (en) * | 2004-02-19 | 2007-04-27 | 삼성에스디아이 주식회사 | fabricating method of organic light emitting display device |
KR100635056B1 (en) | 2004-02-19 | 2006-10-16 | 삼성에스디아이 주식회사 | Fabricating method of OLED |
KR100570978B1 (en) * | 2004-02-20 | 2006-04-13 | 삼성에스디아이 주식회사 | Electroluminescent display device having surface treated organic laeyr and method of fabricating the same |
KR100579191B1 (en) * | 2004-02-24 | 2006-05-11 | 삼성에스디아이 주식회사 | Thermal Transfer Element |
US7238252B2 (en) * | 2004-03-02 | 2007-07-03 | Eastman Kodak Company | Method of forming a OLED donor sheet having rigid edge frame |
US7032285B2 (en) * | 2004-03-02 | 2006-04-25 | Eastman Kodak Company | Mounting an OLED donor sheet to frames |
US7316874B2 (en) * | 2004-03-23 | 2008-01-08 | E. I. Du Pont De Nemours And Company | Process and donor elements for transferring thermally sensitive materials to substrates by thermal imaging |
US7193291B2 (en) * | 2004-03-25 | 2007-03-20 | 3M Innovative Properties Company | Organic Schottky diode |
KR100571006B1 (en) | 2004-05-19 | 2006-04-13 | 삼성에스디아이 주식회사 | organic electroluminescence device and fabricating method of the same |
US7291365B2 (en) * | 2004-05-27 | 2007-11-06 | Eastman Kodak Company | Linear laser light beam for making OLEDS |
US7132140B2 (en) * | 2004-05-27 | 2006-11-07 | Eastman Kodak Company | Plural metallic layers in OLED donor |
US7485337B2 (en) * | 2004-05-27 | 2009-02-03 | Eastman Kodak Company | Depositing an organic layer for use in OLEDs |
US7148957B2 (en) * | 2004-06-09 | 2006-12-12 | 3M Innovative Properties Company, | Imaging system for thermal transfer |
US20070178658A1 (en) * | 2004-06-21 | 2007-08-02 | Kelley Tommie W | Patterning and aligning semiconducting nanoparticles |
US7375701B2 (en) * | 2004-07-01 | 2008-05-20 | Carestream Health, Inc. | Scanless virtual retinal display system |
US20060019116A1 (en) * | 2004-07-22 | 2006-01-26 | Eastman Kodak Company | White electroluminescent device with anthracene derivative host |
US7316756B2 (en) | 2004-07-27 | 2008-01-08 | Eastman Kodak Company | Desiccant for top-emitting OLED |
KR20060017414A (en) * | 2004-08-20 | 2006-02-23 | 삼성에스디아이 주식회사 | Fabrication method of organic electroluminescence display device |
DE102004040831A1 (en) * | 2004-08-23 | 2006-03-09 | Polyic Gmbh & Co. Kg | Radio-tag compatible outer packaging |
KR100731728B1 (en) | 2004-08-27 | 2007-06-22 | 삼성에스디아이 주식회사 | Donor substrate for laser induced thermal imaging method and method for fabricating organic electro-luminescence display device by the same |
KR20060020045A (en) * | 2004-08-30 | 2006-03-06 | 삼성에스디아이 주식회사 | Fabricating method of oled |
KR100623694B1 (en) * | 2004-08-30 | 2006-09-19 | 삼성에스디아이 주식회사 | donor substrate for laser induced thermal imaging and method of fabricating electro-luminescence display device using the same substrate |
KR100611767B1 (en) * | 2004-08-30 | 2006-08-10 | 삼성에스디아이 주식회사 | donor substrate for laser induced thermal imaging and method of fabricating electroluminescence display device using the same substrate |
KR20060021210A (en) * | 2004-09-02 | 2006-03-07 | 삼성에스디아이 주식회사 | Device and method of fabricating donor substrate for laser induced thermal imaging , and method of fabricating oled using the same |
KR100667067B1 (en) * | 2004-09-08 | 2007-01-10 | 삼성에스디아이 주식회사 | Donor substrate for laser induced thermal imaging method and electroluminescence display device manufactured using the same substrate |
JP2006086069A (en) | 2004-09-17 | 2006-03-30 | Three M Innovative Properties Co | Organic electroluminescent element and its manufacturing method |
US20060062983A1 (en) * | 2004-09-17 | 2006-03-23 | Irvin Glen C Jr | Coatable conductive polyethylenedioxythiophene with carbon nanotubes |
US7427441B2 (en) * | 2004-09-17 | 2008-09-23 | Eastman Kodak Co | Transparent polymeric coated conductor |
US7501152B2 (en) | 2004-09-21 | 2009-03-10 | Eastman Kodak Company | Delivering particulate material to a vaporization zone |
US20060060839A1 (en) * | 2004-09-22 | 2006-03-23 | Chandross Edwin A | Organic semiconductor composition |
KR100731729B1 (en) * | 2004-09-23 | 2007-06-22 | 삼성에스디아이 주식회사 | Method of fabricating organic electroluminescence display device |
KR20060027750A (en) * | 2004-09-23 | 2006-03-28 | 삼성에스디아이 주식회사 | Method of fabricating organic electroluminescence display device |
KR100793355B1 (en) * | 2004-10-05 | 2008-01-11 | 삼성에스디아이 주식회사 | Fabricating method of donor device and fabricating method of OLED using the donor device |
KR100579186B1 (en) * | 2004-10-15 | 2006-05-11 | 삼성에스디아이 주식회사 | Organic electroluminescence display device |
KR20060033554A (en) * | 2004-10-15 | 2006-04-19 | 삼성에스디아이 주식회사 | Laser induced thermal imaging apparatus and method of fabricating electroluminescence display device using the same |
KR100721564B1 (en) * | 2004-10-19 | 2007-05-23 | 삼성에스디아이 주식회사 | substrate supporting frame, substrate supporting frame assembly including the frame, method for framing a substrate using the frame, fabrication method for donor substrate using the substrate supporting frame and fabrication method for OLED using the donor substrate |
KR100667069B1 (en) | 2004-10-19 | 2007-01-10 | 삼성에스디아이 주식회사 | Donor substrate and fabrication method of organic light emitting display using the same |
KR100600881B1 (en) * | 2004-10-20 | 2006-07-18 | 삼성에스디아이 주식회사 | laser induced thermal imaging apparatus, laminater and laser induced thermal imaging method using the apparatus |
US7781047B2 (en) * | 2004-10-21 | 2010-08-24 | Eastman Kodak Company | Polymeric conductor donor and transfer method |
US20060088656A1 (en) * | 2004-10-25 | 2006-04-27 | Eastman Kodak Company | Manufacturing donor substrates for making OLED displays |
US7551141B1 (en) | 2004-11-08 | 2009-06-23 | Alien Technology Corporation | RFID strap capacitively coupled and method of making same |
US7615479B1 (en) | 2004-11-08 | 2009-11-10 | Alien Technology Corporation | Assembly comprising functional block deposited therein |
US7353598B2 (en) * | 2004-11-08 | 2008-04-08 | Alien Technology Corporation | Assembly comprising functional devices and method of making same |
US7408187B2 (en) * | 2004-11-19 | 2008-08-05 | Massachusetts Institute Of Technology | Low-voltage organic transistors on flexible substrates using high-gate dielectric insulators by room temperature process |
US7385284B2 (en) * | 2004-11-22 | 2008-06-10 | Alien Technology Corporation | Transponder incorporated into an electronic device |
US20060109130A1 (en) * | 2004-11-22 | 2006-05-25 | Hattick John B | Radio frequency identification (RFID) tag for an item having a conductive layer included or attached |
US7688206B2 (en) | 2004-11-22 | 2010-03-30 | Alien Technology Corporation | Radio frequency identification (RFID) tag for an item having a conductive layer included or attached |
DE102004059465A1 (en) * | 2004-12-10 | 2006-06-14 | Polyic Gmbh & Co. Kg | recognition system |
DE102004059467A1 (en) * | 2004-12-10 | 2006-07-20 | Polyic Gmbh & Co. Kg | Gate made of organic field effect transistors |
DE102004059464A1 (en) * | 2004-12-10 | 2006-06-29 | Polyic Gmbh & Co. Kg | Electronic component with modulator |
KR100635579B1 (en) | 2004-12-20 | 2006-10-17 | 삼성에스디아이 주식회사 | laser induced thermal imaging apparatus, laser induced thermal imaging method using the apparatus and fabrication method of OLED using the apparatus |
US7414313B2 (en) * | 2004-12-22 | 2008-08-19 | Eastman Kodak Company | Polymeric conductor donor and transfer method |
DE102004063435A1 (en) | 2004-12-23 | 2006-07-27 | Polyic Gmbh & Co. Kg | Organic rectifier |
WO2006076611A2 (en) * | 2005-01-14 | 2006-07-20 | Cabot Corporation | Production of metal nanoparticles |
JP2008526575A (en) * | 2005-01-14 | 2008-07-24 | キャボット コーポレイション | Security mechanism and use and manufacturing method thereof |
US20060190917A1 (en) * | 2005-01-14 | 2006-08-24 | Cabot Corporation | System and process for manufacturing application specific printable circuits (ASPC'S) and other custom electronic devices |
WO2006076603A2 (en) * | 2005-01-14 | 2006-07-20 | Cabot Corporation | Printable electrical conductors |
US8383014B2 (en) | 2010-06-15 | 2013-02-26 | Cabot Corporation | Metal nanoparticle compositions |
WO2006076606A2 (en) * | 2005-01-14 | 2006-07-20 | Cabot Corporation | Optimized multi-layer printing of electronics and displays |
WO2006076609A2 (en) * | 2005-01-14 | 2006-07-20 | Cabot Corporation | Printable electronic features on non-uniform substrate and processes for making same |
WO2006076615A1 (en) * | 2005-01-14 | 2006-07-20 | Cabot Corporation | Ink-jet printing of compositionally no-uniform features |
WO2006076608A2 (en) * | 2005-01-14 | 2006-07-20 | Cabot Corporation | A system and process for manufacturing custom electronics by combining traditional electronics with printable electronics |
US7824466B2 (en) | 2005-01-14 | 2010-11-02 | Cabot Corporation | Production of metal nanoparticles |
WO2006076610A2 (en) * | 2005-01-14 | 2006-07-20 | Cabot Corporation | Controlling ink migration during the formation of printable electronic features |
US20060175959A1 (en) * | 2005-02-09 | 2006-08-10 | Osram Opto Semiconductors Gmbh | Green enhancement filter to improve yield of white displays |
US20060177646A1 (en) * | 2005-02-09 | 2006-08-10 | Detlef Burgard | Method for producing shatterproof glass panels and casting resin molding |
US20060181600A1 (en) * | 2005-02-15 | 2006-08-17 | Eastman Kodak Company | Patterns formed by transfer of conductive particles |
US7630029B2 (en) * | 2005-02-16 | 2009-12-08 | Industrial Technology Research Institute | Conductive absorption layer for flexible displays |
US20060188721A1 (en) * | 2005-02-22 | 2006-08-24 | Eastman Kodak Company | Adhesive transfer method of carbon nanotube layer |
KR100700654B1 (en) * | 2005-02-22 | 2007-03-27 | 삼성에스디아이 주식회사 | Laser Irradiation Device and Laser Induced Thermal Imaging |
DE102005009820A1 (en) * | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | Electronic assembly with organic logic switching elements |
DE102005009819A1 (en) | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | electronics assembly |
JP4814539B2 (en) * | 2005-03-10 | 2011-11-16 | 株式会社日立製作所 | Net boot method |
US7371605B2 (en) * | 2005-03-25 | 2008-05-13 | Lucent Technologies Inc. | Active organic semiconductor devices and methods for making the same |
US20060216408A1 (en) * | 2005-03-28 | 2006-09-28 | Eastman Kodak Company | Performance of radiation transfered electronic devices |
US7645478B2 (en) * | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US7113663B1 (en) | 2005-03-31 | 2006-09-26 | Eastman Kodak Company | Visual display with electro-optical individual pixel addressing architecture |
DE102005017655B4 (en) * | 2005-04-15 | 2008-12-11 | Polyic Gmbh & Co. Kg | Multilayer composite body with electronic function |
TWI259027B (en) * | 2005-04-29 | 2006-07-21 | Univision Technology Inc | Organic electroluminescence device capable of preventing long-distance short circuit |
US7399571B2 (en) * | 2005-05-06 | 2008-07-15 | General Electric Company | Multilayered articles and method of manufacture thereof |
US20060291769A1 (en) * | 2005-05-27 | 2006-12-28 | Eastman Kodak Company | Light emitting source incorporating vertical cavity lasers and other MEMS devices within an electro-optical addressing architecture |
US7542301B1 (en) | 2005-06-22 | 2009-06-02 | Alien Technology Corporation | Creating recessed regions in a substrate and assemblies having such recessed regions |
DE102005031448A1 (en) | 2005-07-04 | 2007-01-11 | Polyic Gmbh & Co. Kg | Activatable optical layer |
US8900693B2 (en) * | 2005-07-13 | 2014-12-02 | Sabic Global Technologies B.V. | Polycarbonate compositions having infrared absorbance, method of manufacture, and articles prepared therefrom |
US20070013765A1 (en) * | 2005-07-18 | 2007-01-18 | Eastman Kodak Company | Flexible organic laser printer |
DE102005035590A1 (en) * | 2005-07-29 | 2007-02-01 | Polyic Gmbh & Co. Kg | Electronic component has flexible substrate and stack of layers including function layer on substratesurface |
DE102005035589A1 (en) | 2005-07-29 | 2007-02-01 | Polyic Gmbh & Co. Kg | Manufacturing electronic component on surface of substrate where component has two overlapping function layers |
WO2007015465A1 (en) * | 2005-08-01 | 2007-02-08 | Pioneer Corporation | Production method of organic film heated transfer body, organic film heated transfer body |
US20070045540A1 (en) * | 2005-08-30 | 2007-03-01 | Kang Tae M | Laser induced thermal imaging apparatus with contact frame |
US20070048545A1 (en) * | 2005-08-31 | 2007-03-01 | Eastman Kodak Company | Electron-transporting layer for white OLED device |
DE102005042166A1 (en) * | 2005-09-06 | 2007-03-15 | Polyic Gmbh & Co.Kg | Organic device and such a comprehensive electrical circuit |
KR100759685B1 (en) | 2005-09-08 | 2007-09-17 | 삼성에스디아이 주식회사 | Transcription Element For Laser Induced Thermal Imaging Method and light emission device and Manufacturing Method using the same |
US7410825B2 (en) * | 2005-09-15 | 2008-08-12 | Eastman Kodak Company | Metal and electronically conductive polymer transfer |
DE102005044306A1 (en) * | 2005-09-16 | 2007-03-22 | Polyic Gmbh & Co. Kg | Electronic circuit and method for producing such |
US20070077349A1 (en) * | 2005-09-30 | 2007-04-05 | Eastman Kodak Company | Patterning OLED device electrodes and optical material |
US7396631B2 (en) * | 2005-10-07 | 2008-07-08 | 3M Innovative Properties Company | Radiation curable thermal transfer elements |
US7678526B2 (en) * | 2005-10-07 | 2010-03-16 | 3M Innovative Properties Company | Radiation curable thermal transfer elements |
KR100873071B1 (en) * | 2005-11-07 | 2008-12-09 | 삼성모바일디스플레이주식회사 | Manufacturing method of donor film for improving surface roughness |
KR100700831B1 (en) * | 2005-11-16 | 2007-03-28 | 삼성에스디아이 주식회사 | Laser thermal transfer imaging method and fabricating method of organic light emitting diode using the same |
JP2007173145A (en) * | 2005-12-26 | 2007-07-05 | Sony Corp | Substrate for transfer, transfer method and manufacturing method for organic electroluminescent element |
KR100753569B1 (en) * | 2005-12-30 | 2007-08-30 | 엘지.필립스 엘시디 주식회사 | Fabricating method of organic electro luminescence display device |
KR20070073457A (en) * | 2006-01-05 | 2007-07-10 | 삼성에스디아이 주식회사 | Manufacturing method of donor film for oled and manufacturing method of oled using the same |
JP2007201031A (en) * | 2006-01-25 | 2007-08-09 | Mitsubishi Electric Corp | Semiconductor laser device |
JP4977391B2 (en) * | 2006-03-27 | 2012-07-18 | 日本電気株式会社 | Laser cutting method, display device manufacturing method, and display device |
US20070242719A1 (en) * | 2006-04-12 | 2007-10-18 | Eastman Kodak Company | Optical manipulator illuminated by patterned organic microcavity lasers |
KR100731755B1 (en) * | 2006-05-03 | 2007-06-22 | 삼성에스디아이 주식회사 | Donor substrate for flat panel display device and method of fabricating oled using the same |
US7223515B1 (en) | 2006-05-30 | 2007-05-29 | 3M Innovative Properties Company | Thermal mass transfer substrate films, donor elements, and methods of making and using same |
US20080007518A1 (en) * | 2006-06-23 | 2008-01-10 | Debasis Majumdar | Conductive polymer coating with improved aging stability |
US7744717B2 (en) * | 2006-07-17 | 2010-06-29 | E. I. Du Pont De Nemours And Company | Process for enhancing the resolution of a thermally transferred pattern |
US8062824B2 (en) | 2006-07-17 | 2011-11-22 | E. I. Du Pont De Nemours And Company | Thermally imageable dielectric layers, thermal transfer donors and receivers |
US7582403B2 (en) * | 2006-07-17 | 2009-09-01 | E. I. Du Pont De Nemours And Company | Metal compositions, thermal imaging donors and patterned multilayer compositions derived therefrom |
US7670450B2 (en) * | 2006-07-31 | 2010-03-02 | 3M Innovative Properties Company | Patterning and treatment methods for organic light emitting diode devices |
US7588656B2 (en) * | 2006-08-17 | 2009-09-15 | E. I. Du Pont De Nemours And Company | Thermal transfer imaging element and method of using same |
US7829162B2 (en) | 2006-08-29 | 2010-11-09 | international imagining materials, inc | Thermal transfer ribbon |
US7419757B2 (en) * | 2006-10-20 | 2008-09-02 | 3M Innovative Properties Company | Structured thermal transfer donors |
US7604916B2 (en) | 2006-11-06 | 2009-10-20 | 3M Innovative Properties Company | Donor films with pattern-directing layers |
US20080117362A1 (en) * | 2006-11-21 | 2008-05-22 | 3M Innovative Properties Company | Organic Light Emitting Diode Devices With Optical Microstructures |
KR100796605B1 (en) * | 2006-12-15 | 2008-01-21 | 삼성에스디아이 주식회사 | Donor substrate and method of fabricating oled using the same |
US20080233404A1 (en) * | 2007-03-22 | 2008-09-25 | 3M Innovative Properties Company | Microreplication tools and patterns using laser induced thermal embossing |
JP4450006B2 (en) * | 2007-04-02 | 2010-04-14 | ソニー株式会社 | Substrate for transfer and method for producing organic electroluminescent device |
US20080264682A1 (en) * | 2007-04-24 | 2008-10-30 | John Catron | Substrate and negative imaging method for providing transparent conducting patterns |
US8367152B2 (en) * | 2007-04-27 | 2013-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of light-emitting device |
TWI477195B (en) * | 2007-04-27 | 2015-03-11 | Semiconductor Energy Lab | Manufacturing method of light-emittig device |
BRPI0813650A2 (en) * | 2007-06-28 | 2014-12-30 | Cabot Corp | LIGHT FOR CONVERSION LAYER HEATING INCORPORATING MODIFIED PIGMENT |
US7927454B2 (en) * | 2007-07-17 | 2011-04-19 | Samsung Mobile Display Co., Ltd. | Method of patterning a substrate |
US7812531B2 (en) | 2007-07-25 | 2010-10-12 | Global Oled Technology Llc | Preventing stress transfer in OLED display components |
DE102007045518B4 (en) * | 2007-09-24 | 2010-12-16 | Siemens Ag | Solution-processed organic electronic component with improved electrode layer |
JP5212377B2 (en) * | 2007-11-07 | 2013-06-19 | コニカミノルタホールディングス株式会社 | Transparent electrode and method for producing transparent electrode |
US8016631B2 (en) * | 2007-11-16 | 2011-09-13 | Global Oled Technology Llc | Desiccant sealing arrangement for OLED devices |
US8021726B2 (en) | 2007-12-06 | 2011-09-20 | E. I. Du Pont De Nemours And Company | Compositions and processes for preparing color filter elements using alkali metal fluorides |
US20090155963A1 (en) * | 2007-12-12 | 2009-06-18 | Hawkins Gilbert A | Forming thin film transistors using ablative films |
JP2009295313A (en) * | 2008-06-03 | 2009-12-17 | Canon Inc | Method of forming spacer |
JP2010044118A (en) | 2008-08-08 | 2010-02-25 | Sony Corp | Display, and its manufacturing method |
JP2010062269A (en) * | 2008-09-02 | 2010-03-18 | Three M Innovative Properties Co | Method and apparatus for manufacturing wafer laminate, wafer laminate manufacturing method, method for exfoliating support layer, and method for manufacturing wafer |
JP5337637B2 (en) * | 2008-09-19 | 2013-11-06 | パナソニック株式会社 | Optical module and manufacturing method thereof |
US8162022B2 (en) * | 2008-10-03 | 2012-04-24 | Nike, Inc. | Method of customizing an article and apparatus |
CN102224613A (en) * | 2009-01-07 | 2011-10-19 | 夏普株式会社 | Organic electroluminescence display device and method for producing the same |
US8093080B2 (en) * | 2009-02-19 | 2012-01-10 | Kotusa, Inc. | Optical device having light sensor employing horizontal electrical field |
US8053790B2 (en) * | 2009-02-19 | 2011-11-08 | Kotusa, Inc. | Optical device having light sensor employing horizontal electrical field |
DE102009029903A1 (en) * | 2009-06-19 | 2010-12-23 | Tesa Se | Method for applying permanently processed label on e.g. plate, involves loading laser transferring film with partially provided pigment layer and supporting layer by using laser, where pigment layer includes laser-sensitive pigment |
US20110014739A1 (en) * | 2009-07-16 | 2011-01-20 | Kondakov Denis Y | Making an emissive layer for multicolored oleds |
KR101073559B1 (en) * | 2009-10-13 | 2011-10-17 | 삼성모바일디스플레이주식회사 | Donor substrate and method of fabricating OLED using the same |
US8242432B2 (en) * | 2009-10-23 | 2012-08-14 | Kotura, Inc. | System having light sensor with enhanced sensitivity including a multiplication layer for generating additional electrons |
US20110151153A1 (en) | 2009-12-23 | 2011-06-23 | E.I. Du Pont De Nemours And Company | Polymeric conductive donor |
US8536087B2 (en) | 2010-04-08 | 2013-09-17 | International Imaging Materials, Inc. | Thermographic imaging element |
JP5440439B2 (en) * | 2010-08-05 | 2014-03-12 | 三菱電機株式会社 | Method for manufacturing thin film photoelectric conversion device |
DE102010044985B4 (en) * | 2010-09-10 | 2022-02-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Method for applying a conversion agent to an optoelectronic semiconductor chip and optoelectronic component |
US10095016B2 (en) | 2011-01-04 | 2018-10-09 | Nlight, Inc. | High power laser system |
US9409255B1 (en) | 2011-01-04 | 2016-08-09 | Nlight, Inc. | High power laser imaging systems |
US9429742B1 (en) | 2011-01-04 | 2016-08-30 | Nlight, Inc. | High power laser imaging systems |
US9105860B2 (en) | 2011-06-30 | 2015-08-11 | Samsung Display Co., Ltd. | Organic light emitting diode |
US8410566B2 (en) | 2011-07-21 | 2013-04-02 | Kotura, Inc. | Application of electrical field power to light-transmitting medium |
KR102050029B1 (en) * | 2011-08-26 | 2019-11-29 | 삼성디스플레이 주식회사 | Donor substrate, method of manufacturing a donor substrate, organic light emitting display device and method of manufacturing an organic light emitting display device |
US9720244B1 (en) | 2011-09-30 | 2017-08-01 | Nlight, Inc. | Intensity distribution management system and method in pixel imaging |
US9490658B2 (en) * | 2011-12-09 | 2016-11-08 | Nokia Technologies Oy | Apparatus and a method of manufacturing an apparatus |
KR101459131B1 (en) * | 2011-12-30 | 2014-11-10 | 제일모직주식회사 | Thermal transfer film |
KR101422665B1 (en) * | 2011-12-30 | 2014-07-24 | 제일모직주식회사 | Thermal transfer film |
JP5263460B1 (en) | 2012-06-12 | 2013-08-14 | 東洋インキScホールディングス株式会社 | Resin composition for light scattering layer, light scattering layer, and organic electroluminescence device |
KR101985978B1 (en) | 2012-12-14 | 2019-06-04 | 도레이첨단소재 주식회사 | Doner film for laser induced thermal imaging with superior laser transferring characteristics and manufacturing method of organic electroluminescent element using the same |
KR101977992B1 (en) | 2012-12-14 | 2019-05-13 | 도레이첨단소재 주식회사 | Doner film for laser induced thermal imaging |
KR101608116B1 (en) | 2012-12-18 | 2016-03-31 | 제일모직주식회사 | Thermal transfer film, method for preparing the same and electroluminescence display prepared using the same |
ITTO20130087A1 (en) * | 2013-02-04 | 2013-05-06 | K4B S R L | LASER MARKING PROCEDURE AND REALIZATION OF ELECTRICAL / ELECTRONIC CONNECTIONS FOR TRANSPARENT SURFACES |
US9310248B2 (en) | 2013-03-14 | 2016-04-12 | Nlight, Inc. | Active monitoring of multi-laser systems |
KR102065763B1 (en) | 2013-03-27 | 2020-01-14 | 삼성디스플레이 주식회사 | Organic light emitting pattern forming method and apparatus for organic light emitting display device using sublimation type thermal transfer process |
CN105144844B (en) * | 2013-03-29 | 2017-05-31 | 大日本印刷株式会社 | Manufacturing method and element fabricating device |
KR20140124940A (en) | 2013-04-16 | 2014-10-28 | 삼성디스플레이 주식회사 | Donor Substrate, Method Of Fabricating Orgnic Light Emitting Display Device Using the Donor Substrate and Orgnic Light Emitting Display Device Manufactured By The Method |
US9377581B2 (en) | 2013-05-08 | 2016-06-28 | Mellanox Technologies Silicon Photonics Inc. | Enhancing the performance of light sensors that receive light signals from an integrated waveguide |
KR20140139853A (en) * | 2013-05-28 | 2014-12-08 | 삼성디스플레이 주식회사 | Donor substrate and method for forming transfer pattern using the same |
KR20140140188A (en) * | 2013-05-28 | 2014-12-09 | 삼성디스플레이 주식회사 | Donor substrate, method for fabricating the same and method for forming transfer pattern using the same |
KR20140140190A (en) | 2013-05-28 | 2014-12-09 | 삼성디스플레이 주식회사 | Donor substrate, method for fabricating the same and method for forming transfer pattern using the same |
KR20140140189A (en) | 2013-05-28 | 2014-12-09 | 삼성디스플레이 주식회사 | Donor substrate and method for forming transfer pattern using the same |
US9359198B2 (en) | 2013-08-22 | 2016-06-07 | Massachusetts Institute Of Technology | Carrier-substrate adhesive system |
US10046550B2 (en) | 2013-08-22 | 2018-08-14 | Massachusetts Institute Of Technology | Carrier-substrate adhesive system |
JP6282094B2 (en) * | 2013-11-27 | 2018-02-21 | キヤノン株式会社 | Surface emitting laser and optical coherence tomography using the same |
US9709810B2 (en) | 2014-02-05 | 2017-07-18 | Nlight, Inc. | Single-emitter line beam system |
JP6287627B2 (en) | 2014-06-25 | 2018-03-07 | 住友金属鉱山株式会社 | Photothermal conversion layer, donor sheet |
JP2016009634A (en) | 2014-06-25 | 2016-01-18 | 住友金属鉱山株式会社 | Photothermal conversion layer, and donor sheet |
CN105655369A (en) * | 2014-08-28 | 2016-06-08 | 汤宝林 | Serial thermal printing light emitting display |
JP6497128B2 (en) | 2015-02-26 | 2019-04-10 | 住友金属鉱山株式会社 | Donor sheet |
KR102352406B1 (en) | 2015-03-02 | 2022-01-19 | 삼성디스플레이 주식회사 | Fabrication method of display device and display device |
CN104762599A (en) | 2015-04-15 | 2015-07-08 | 京东方科技集团股份有限公司 | Vapor deposition method and vapor deposition device |
CN107024789A (en) * | 2016-01-29 | 2017-08-08 | 富泰华工业(深圳)有限公司 | Liquid crystal panel and its manufacture method |
US10056020B2 (en) | 2016-02-11 | 2018-08-21 | Oculus Vr, Llc | Waveguide display with two-dimensional scanner |
US11089690B2 (en) * | 2016-03-16 | 2021-08-10 | Ncc Nano, Llc | Method for depositing a functional material on a substrate |
EP3465778B1 (en) | 2016-06-06 | 2021-05-12 | NCC Nano, LLC | Method for performing delamination of a polymer film |
WO2018094504A1 (en) | 2016-11-23 | 2018-05-31 | Institut National De La Recherche Scientifique | Method and system of laser-driven impact acceleration |
US10690919B1 (en) | 2017-02-17 | 2020-06-23 | Facebook Technologies, Llc | Superluminous LED array for waveguide display |
US11320267B2 (en) | 2017-03-23 | 2022-05-03 | Kvh Industries, Inc. | Integrated optic wavemeter and method for fiber optic gyroscopes scale factor stabilization |
WO2018235842A1 (en) | 2017-06-19 | 2018-12-27 | 住友金属鉱山株式会社 | Light to heat conversion layer, method for producing same, and donor sheet using said light to heat conversion layer |
EP3683604A4 (en) | 2017-09-14 | 2021-06-09 | Sumitomo Metal Mining Co., Ltd. | Photothermal conversion layer, donor sheet using photothermal conversion layer, and method for producing layer and sheet |
CA3073803A1 (en) | 2017-09-15 | 2019-03-21 | Kvh Industries, Inc. | Method and apparatus for self-alignment connection of optical fiber to waveguide of photonic integrated circuit |
TWI662730B (en) * | 2018-03-09 | 2019-06-11 | 謙華科技股份有限公司 | Thermal transfer film for preparing organic light emitting diode and preparation method thereof |
TWI671931B (en) * | 2018-03-19 | 2019-09-11 | 謙華科技股份有限公司 | Method for preparing organic light-emitting diode using thermal transfer film |
TW201943114A (en) * | 2018-03-31 | 2019-11-01 | 謙華科技股份有限公司 | Method for continuously fabricating organic light emitting diodes using thermal transfer film capable of improving conventional complicated vacuum evaporation process and increasing material utilization |
CN112533756A (en) * | 2018-06-28 | 2021-03-19 | 尼蓝宝股份有限公司 | Simultaneous surface modification and method for producing the same |
EP3815475A4 (en) * | 2018-06-28 | 2022-03-30 | 3M Innovative Properties Company | Methods of making metal patterns on flexible substrate |
JP2022504470A (en) | 2018-10-11 | 2022-01-13 | ケーブイエイチ インダストリーズ インク | Photonic integrated circuit, optical fiber gyroscope and its manufacturing method |
CN109733082B (en) * | 2019-02-21 | 2021-04-06 | 界首市兴华渔具有限公司 | Bionic bait water transfer printing coloring process |
CN110148678A (en) * | 2019-04-29 | 2019-08-20 | 深圳市华星光电半导体显示技术有限公司 | The production method of auxiliary electrode transfer organization and display panel |
US11353655B2 (en) * | 2019-05-22 | 2022-06-07 | Kvh Industries, Inc. | Integrated optical polarizer and method of making same |
CN114008763A (en) * | 2019-06-18 | 2022-02-01 | 维耶尔公司 | High throughput microprinting process |
US20210045476A1 (en) | 2019-08-12 | 2021-02-18 | Nike, Inc. | Apparel with adaptive fit |
CN110649180B (en) * | 2019-09-30 | 2021-10-26 | 武汉天马微电子有限公司 | Display panel manufacturing method, display panel and display device |
EP3911130A1 (en) * | 2020-05-12 | 2021-11-17 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO | Transferring viscous materials |
EP4037442A1 (en) * | 2021-02-01 | 2022-08-03 | Nederlandse Organisatie Voor Toegepast- Natuurwetenschappelijk Onderzoek Tno | Donor plate, deposition device and deposition method |
WO2022271595A1 (en) | 2021-06-23 | 2022-12-29 | International Imaging Materials, Inc. | Thermographic imaging element |
Family Cites Families (69)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4252671A (en) * | 1979-12-04 | 1981-02-24 | Xerox Corporation | Preparation of colloidal iron dispersions by the polymer-catalyzed decomposition of iron carbonyl and iron organocarbonyl compounds |
JPS58195498U (en) * | 1982-06-22 | 1983-12-26 | 凸版印刷株式会社 | Transfer foil for electromagnetic shielding |
US4539507A (en) | 1983-03-25 | 1985-09-03 | Eastman Kodak Company | Organic electroluminescent devices having improved power conversion efficiencies |
GB2170016B (en) * | 1984-12-19 | 1989-04-05 | Plessey Co Plc | Improvements in or relating to modulators |
CA1268808A (en) * | 1985-07-23 | 1990-05-08 | Alan G. Macdiarmid | High capacity polyaniline electrodes |
EP0258836B1 (en) * | 1986-09-01 | 1992-08-12 | Tomoegawa Paper Co. Ltd. | Transfer recording medium and method of transfer recording using the same |
US4833124A (en) * | 1987-12-04 | 1989-05-23 | Eastman Kodak Company | Process for increasing the density of images obtained by thermal dye transfer |
DE3872854T2 (en) * | 1987-12-21 | 1993-03-04 | Eastman Kodak Co | INFRARED ABSORBENT CYANINE DYES FOR DYE DONOR ELEMENTS FOR USE IN LASER-INDUCED THERMAL DYE TRANSFER. |
JPH01290495A (en) * | 1988-05-18 | 1989-11-22 | Konica Corp | Thermal transfer recording medium |
US5256506A (en) * | 1990-10-04 | 1993-10-26 | Graphics Technology International Inc. | Ablation-transfer imaging/recording |
US5171650A (en) * | 1990-10-04 | 1992-12-15 | Graphics Technology International, Inc. | Ablation-transfer imaging/recording |
US5156938A (en) * | 1989-03-30 | 1992-10-20 | Graphics Technology International, Inc. | Ablation-transfer imaging/recording |
US5501938A (en) * | 1989-03-30 | 1996-03-26 | Rexham Graphics Inc. | Ablation-transfer imaging/recording |
US4948776A (en) * | 1989-06-16 | 1990-08-14 | Eastman Kodak Company | Infrared absorbing chalcogenopyrylo-arylidene dyes for dye-donor element used in laser-induced thermal dye transfer |
US4942141A (en) * | 1989-06-16 | 1990-07-17 | Eastman Kodak Company | Infrared absorbing squarylium dyes for dye-donor element used in laser-induced thermal dye transfer |
US4950639A (en) * | 1989-06-16 | 1990-08-21 | Eastman Kodak Company | Infrared absorbing bis(aminoaryl)polymethine dyes for dye-donor element used in laser-induced thermal dye transfer |
US4952552A (en) * | 1989-06-20 | 1990-08-28 | Eastman Kodak Company | Infrared absorbing quinoid dyes for dye-donor element used in laser-induced thermal dye transfer |
US4912083A (en) * | 1989-06-20 | 1990-03-27 | Eastman Kodak Company | Infrared absorbing ferrous complexes for dye-donor element used in laser-induced thermal dye transfer |
US4948778A (en) * | 1989-06-20 | 1990-08-14 | Eastman Kodak Company | Infrared absorbing oxyindolizine dyes for dye-donor element used in laser-induced thermal dye transfer |
US5061569A (en) | 1990-07-26 | 1991-10-29 | Eastman Kodak Company | Electroluminescent device with organic electroluminescent medium |
US5023229A (en) * | 1990-10-31 | 1991-06-11 | Eastman Kodak Company | Mixture of dyes for magenta dye donor for thermal color proofing |
US5024990A (en) * | 1990-10-31 | 1991-06-18 | Eastman Kodak Company | Mixture of dyes for cyan dye donor for thermal color proofing |
US5166024A (en) * | 1990-12-21 | 1992-11-24 | Eastman Kodak Company | Photoelectrographic imaging with near-infrared sensitizing pigments |
US5401607A (en) * | 1991-04-17 | 1995-03-28 | Polaroid Corporation | Processes and compositions for photogeneration of acid |
US5141671A (en) | 1991-08-01 | 1992-08-25 | Eastman Kodak Company | Mixed ligand 8-quinolinolato aluminum chelate luminophors |
US5244770A (en) * | 1991-10-23 | 1993-09-14 | Eastman Kodak Company | Donor element for laser color transfer |
DE69320241T2 (en) * | 1992-05-06 | 1999-04-29 | Kyowa Hakko Kogyo Kk | Chemically amplified resist composition |
US5351617A (en) * | 1992-07-20 | 1994-10-04 | Presstek, Inc. | Method for laser-discharge imaging a printing plate |
WO1994011785A1 (en) * | 1992-11-18 | 1994-05-26 | Rexham Graphics Inc. | On-demand production of lat imaging films |
US5286604A (en) * | 1992-11-25 | 1994-02-15 | E. I. Du Pont De Nemours And Company | Single layer dry processible photothermal-sensitive element |
JPH06258537A (en) * | 1993-03-08 | 1994-09-16 | Mitsubishi Rayon Co Ltd | Dry film resist and printing circuit board using the same |
EP0641008A4 (en) | 1993-03-11 | 1995-07-12 | Sony Corp | Method for forming fluorescent film, and transfer material for formation of the fluorescent film. |
US5372915A (en) * | 1993-05-19 | 1994-12-13 | Eastman Kodak Company | Method of making a lithographic printing plate containing a resole resin and a novolac resin in the radiation sensitive layer |
US5387496A (en) * | 1993-07-30 | 1995-02-07 | Eastman Kodak Company | Interlayer for laser ablative imaging |
ES2159567T3 (en) * | 1993-08-13 | 2001-10-16 | Pgi Graphics Imaging Llc | TRANSFER BY ABLATION ON INTERMEDIATE RECEIVERS. |
JPH0757871A (en) * | 1993-08-19 | 1995-03-03 | Hitachi Ltd | Electroluminescence display device |
US5360694A (en) * | 1993-10-18 | 1994-11-01 | Minnesota Mining And Manufacturing Company | Thermal dye transfer |
JPH07248557A (en) | 1994-03-10 | 1995-09-26 | Konica Corp | Method for processing radiation picture |
JPH07248508A (en) * | 1994-03-14 | 1995-09-26 | Toshiba Corp | Liquid crystal display device |
US5521035A (en) * | 1994-07-11 | 1996-05-28 | Minnesota Mining And Manufacturing Company | Methods for preparing color filter elements using laser induced transfer of colorants with associated liquid crystal display device |
US5707745A (en) * | 1994-12-13 | 1998-01-13 | The Trustees Of Princeton University | Multicolor organic light emitting devices |
KR960026673A (en) * | 1994-12-28 | 1996-07-22 | 윤종용 | Integrated structure of chip and mounting method |
US5685939A (en) * | 1995-03-10 | 1997-11-11 | Minnesota Mining And Manufacturing Company | Process for making a Z-axis adhesive and establishing electrical interconnection therewith |
US5725981A (en) * | 1995-08-09 | 1998-03-10 | Fuji Photo Film Co., Ltd. | Method of forming color images by electrophotographic process employing a peelable transfer layer having a stratified structure |
JP2780681B2 (en) * | 1995-08-11 | 1998-07-30 | 日本電気株式会社 | Active matrix liquid crystal display panel and manufacturing method thereof |
AU7256496A (en) * | 1995-10-17 | 1997-05-07 | Minnesota Mining And Manufacturing Company | Method for radiation-induced thermal transfer of resist for flexible printed circuitry |
US5688551A (en) * | 1995-11-13 | 1997-11-18 | Eastman Kodak Company | Method of forming an organic electroluminescent display panel |
US6010817A (en) * | 1995-12-14 | 2000-01-04 | Agfa-Gevaert, N.V. | Heat sensitive imaging element and a method for producing lithographic plates therewith |
JPH09237898A (en) * | 1996-02-29 | 1997-09-09 | A G Technol Kk | Polycrystal semiconductor tft, manufacture thereof and tft substrate |
US5605780A (en) * | 1996-03-12 | 1997-02-25 | Eastman Kodak Company | Lithographic printing plate adapted to be imaged by ablation |
US5691114A (en) * | 1996-03-12 | 1997-11-25 | Eastman Kodak Company | Method of imaging of lithographic printing plates using laser ablation |
US5695907A (en) * | 1996-03-14 | 1997-12-09 | Minnesota Mining And Manufacturing Company | Laser addressable thermal transfer imaging element and method |
JPH09258050A (en) * | 1996-03-21 | 1997-10-03 | Toyo Commun Equip Co Ltd | Manufacture of optical waveguide |
US5747217A (en) * | 1996-04-03 | 1998-05-05 | Minnesota Mining And Manufacturing Company | Laser-induced mass transfer imaging materials and methods utilizing colorless sublimable compounds |
US5725989A (en) | 1996-04-15 | 1998-03-10 | Chang; Jeffrey C. | Laser addressable thermal transfer imaging element with an interlayer |
US5693446A (en) * | 1996-04-17 | 1997-12-02 | Minnesota Mining And Manufacturing Company | Polarizing mass transfer donor element and method of transferring a polarizing mass transfer layer |
US5710097A (en) * | 1996-06-27 | 1998-01-20 | Minnesota Mining And Manufacturing Company | Process and materials for imagewise placement of uniform spacers in flat panel displays |
US5998085A (en) * | 1996-07-23 | 1999-12-07 | 3M Innovative Properties | Process for preparing high resolution emissive arrays and corresponding articles |
KR100195175B1 (en) * | 1996-12-23 | 1999-06-15 | 손욱 | Electroluminescence element and its manufacturing method |
US5904961A (en) * | 1997-01-24 | 1999-05-18 | Eastman Kodak Company | Method of depositing organic layers in organic light emitting devices |
US5756240A (en) * | 1997-01-24 | 1998-05-26 | Eastman Kodak Company | Method of making color filter arrays by transferring colorant material |
JP3268993B2 (en) * | 1997-01-31 | 2002-03-25 | 三洋電機株式会社 | Display device |
JPH10288965A (en) * | 1997-04-14 | 1998-10-27 | Casio Comput Co Ltd | Display device |
US5937272A (en) * | 1997-06-06 | 1999-08-10 | Eastman Kodak Company | Patterned organic layers in a full-color organic electroluminescent display array on a thin film transistor array substrate |
JP3466876B2 (en) * | 1997-06-16 | 2003-11-17 | キヤノン株式会社 | Manufacturing method of electroluminescence device |
US5777070A (en) | 1997-10-23 | 1998-07-07 | The Dow Chemical Company | Process for preparing conjugated polymers |
JP4547723B2 (en) | 1998-03-09 | 2010-09-22 | セイコーエプソン株式会社 | Manufacturing method of organic EL display device |
EP1116260A1 (en) | 1998-09-04 | 2001-07-18 | Fed Corporation | Fabrication method for high resolution full color organic led displays |
US6114088A (en) * | 1999-01-15 | 2000-09-05 | 3M Innovative Properties Company | Thermal transfer element for forming multilayer devices |
-
1999
- 1999-01-15 US US09/231,723 patent/US6114088A/en not_active Expired - Lifetime
- 1999-05-24 JP JP2000593483A patent/JP2002534782A/en active Pending
- 1999-05-24 DE DE69903978T patent/DE69903978T2/en not_active Expired - Fee Related
- 1999-05-24 KR KR1020017008882A patent/KR100654649B1/en not_active IP Right Cessation
- 1999-05-24 CN CNB998164410A patent/CN1196602C/en not_active Expired - Fee Related
- 1999-05-24 EP EP99925779A patent/EP1144198B1/en not_active Expired - Lifetime
- 1999-05-24 AU AU41997/99A patent/AU4199799A/en not_active Abandoned
- 1999-05-24 WO PCT/US1999/011425 patent/WO2000041892A1/en active IP Right Grant
- 1999-12-28 US US09/473,115 patent/US6194119B1/en not_active Expired - Lifetime
-
2000
- 2000-01-05 US US09/477,966 patent/US6140009A/en not_active Expired - Lifetime
- 2000-01-11 MY MYPI20000080A patent/MY128213A/en unknown
- 2000-01-11 AU AU27237/00A patent/AU2723700A/en not_active Abandoned
- 2000-01-11 EP EP06001453A patent/EP1657074B1/en not_active Expired - Lifetime
- 2000-01-11 EP EP03012253A patent/EP1342585B1/en not_active Expired - Lifetime
- 2000-04-10 US US09/545,932 patent/US6214520B1/en not_active Expired - Lifetime
- 2000-04-10 US US09/546,414 patent/US6221553B1/en not_active Expired - Lifetime
- 2000-04-10 US US09/545,930 patent/US6270944B1/en not_active Expired - Lifetime
- 2000-12-08 MY MYPI20005776A patent/MY126938A/en unknown
-
2001
- 2001-02-16 US US09/785,721 patent/US20010036561A1/en not_active Abandoned
-
2002
- 2002-03-21 HK HK02102183.1A patent/HK1042454A1/en unknown
- 2002-05-02 US US10/137,616 patent/US6586153B2/en not_active Expired - Lifetime
-
2011
- 2011-01-04 JP JP2011000059A patent/JP5050103B2/en not_active Expired - Lifetime
Cited By (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6650464B2 (en) * | 2001-01-25 | 2003-11-18 | Sharp Kabushiki Kaisha | Laser processing device and organic electroluminescent display panel using the same |
US6852355B2 (en) | 2001-03-01 | 2005-02-08 | E. I. Du Pont De Nemours And Company | Thermal imaging processes and products of electroactive organic material |
US20020149315A1 (en) * | 2001-03-01 | 2002-10-17 | Blanchet-Fincher Graciela B. | Thermal imaging processes and products of electroactive organic material |
US7229676B2 (en) | 2001-03-01 | 2007-06-12 | E. I. Du Pont De Nemours And Company | Thermal imaging processes and products of electroactive organic material |
EP1321303A1 (en) * | 2001-12-12 | 2003-06-25 | Eastman Kodak Company | Apparatus for transferring organic material from a donor to form a layer in an OLED device |
US20030194497A1 (en) * | 2002-04-15 | 2003-10-16 | Fuji Photo Film Co., Ltd. | Coating method, coating apparatus, and method and apparatus for manufacturing pattern members using webs on which coating films have been formed by coating method and coating apparatus |
EP1354638A2 (en) * | 2002-04-15 | 2003-10-22 | Fuji Photo Film Co., Ltd. | Method and apparatus for manufacturing pattern members using webs on which coating films have been formed |
EP1354638A3 (en) * | 2002-04-15 | 2004-11-03 | Fuji Photo Film Co., Ltd. | Method and apparatus for manufacturing pattern members using webs on which coating films have been formed |
US6784017B2 (en) | 2002-08-12 | 2004-08-31 | Precision Dynamics Corporation | Method of creating a high performance organic semiconductor device |
US20050003574A1 (en) * | 2002-08-12 | 2005-01-06 | Yang Yang | Method of creating a high performance organic semiconductor device |
US20040051447A1 (en) * | 2002-09-12 | 2004-03-18 | Canon Kabushiki Kaisha | Organic electroluminescent display and apparatus including organic electroluminescent display |
US7355339B2 (en) * | 2002-09-12 | 2008-04-08 | Canon Kabushiki Kaisha | Organic electroluminescent display and apparatus including organic electroluminescent display |
US20040062947A1 (en) * | 2002-09-25 | 2004-04-01 | Lamansky Sergey A. | Organic electroluminescent compositions |
US7455563B2 (en) * | 2003-02-13 | 2008-11-25 | Samsung Sdi Co., Ltd. | Thin film electroluminescence display device and method of manufacturing the same |
US20070114923A1 (en) * | 2003-02-13 | 2007-05-24 | Samsung Sdi Co., Ltd. | Thin film electroluminescence display device and method of manufacturing the same |
US20070009827A1 (en) * | 2003-05-23 | 2007-01-11 | Intelleflex Corporation | Lamination and delamination technique for thin film processing |
US20040235267A1 (en) * | 2003-05-23 | 2004-11-25 | James Sheats | Lamination and delamination technique for thin film processing |
US7141348B2 (en) | 2003-05-23 | 2006-11-28 | Intelleflex Corporation | Lamination and delamination technique for thin film processing |
US6946178B2 (en) | 2003-05-23 | 2005-09-20 | James Sheats | Lamination and delamination technique for thin film processing |
US20040232943A1 (en) * | 2003-05-23 | 2004-11-25 | James Sheats | Lamination and delamination technique for thin film processing |
US7892382B2 (en) | 2003-11-18 | 2011-02-22 | Samsung Mobile Display Co., Ltd. | Electroluminescent devices and methods of making electroluminescent devices including a color conversion element |
US20050118923A1 (en) * | 2003-11-18 | 2005-06-02 | Erika Bellmann | Method of making an electroluminescent device including a color filter |
US8569948B2 (en) | 2004-12-28 | 2013-10-29 | Samsung Display Co., Ltd. | Electroluminescent devices and methods of making electroluminescent devices including an optical spacer |
US9918370B2 (en) | 2004-12-28 | 2018-03-13 | Samsung Display Co., Ltd. | Electroluminescent devices and methods of making electroluminescent devices including an optical spacer |
US20060138945A1 (en) * | 2004-12-28 | 2006-06-29 | Wolk Martin B | Electroluminescent devices and methods of making electroluminescent devices including an optical spacer |
US7723735B2 (en) * | 2005-04-18 | 2010-05-25 | Sony Corporation | Display device and a method of manufacturing the same |
US20060231830A1 (en) * | 2005-04-18 | 2006-10-19 | Eisuke Matsuda | Display device and a method of manufacturing the same |
US20080246392A1 (en) * | 2007-03-07 | 2008-10-09 | Sam-Il Kho | Donor substrate, method of fabricating the same, and organic light emitting diode display device |
US20090011677A1 (en) * | 2007-07-06 | 2009-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for Manufacturing Light-Emitting Device |
US8551557B2 (en) | 2007-07-06 | 2013-10-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting device |
TWI481733B (en) * | 2007-12-28 | 2015-04-21 | Semiconductor Energy Lab | Method for manufacturing evaporation donor substrate and light-emitting device |
US20130192523A1 (en) * | 2009-04-06 | 2013-08-01 | Terepac Corporation | Systems and methods for printing electronic device assembly |
US8518500B2 (en) * | 2009-05-29 | 2013-08-27 | Sony Corporation | Thermal transfer sheet and ink ribbon |
US20100304056A1 (en) * | 2009-05-29 | 2010-12-02 | Sony Corporation | Thermal transfer sheet and ink ribbon |
WO2014105233A3 (en) * | 2012-09-26 | 2014-08-21 | Sandia Corporation | Processes for multi-layer devices utilizing layer transfer |
US8946052B2 (en) | 2012-09-26 | 2015-02-03 | Sandia Corporation | Processes for multi-layer devices utilizing layer transfer |
WO2014105233A2 (en) * | 2012-09-26 | 2014-07-03 | Sandia Corporation | Processes for multi-layer devices utilizing layer transfer |
US11294272B2 (en) | 2017-12-14 | 2022-04-05 | Boe Technology Group Co., Ltd. | Donor substrate for depositing deposition material on acceptor substrate, method of depositing deposition material, and method of fabricating donor substrate |
Also Published As
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JP5050103B2 (en) | 2012-10-17 |
US6194119B1 (en) | 2001-02-27 |
AU2723700A (en) | 2000-08-01 |
DE69903978T2 (en) | 2003-07-17 |
EP1144198B1 (en) | 2002-11-13 |
JP2011093322A (en) | 2011-05-12 |
WO2000041892A1 (en) | 2000-07-20 |
US6221553B1 (en) | 2001-04-24 |
HK1042454A1 (en) | 2002-08-16 |
CN1337905A (en) | 2002-02-27 |
US6140009A (en) | 2000-10-31 |
EP1342585B1 (en) | 2006-04-19 |
KR20010108097A (en) | 2001-12-07 |
KR100654649B1 (en) | 2006-12-07 |
DE69903978D1 (en) | 2002-12-19 |
US20020172887A1 (en) | 2002-11-21 |
MY126938A (en) | 2006-11-30 |
US6270944B1 (en) | 2001-08-07 |
EP1144198A1 (en) | 2001-10-17 |
US6586153B2 (en) | 2003-07-01 |
EP1657074A1 (en) | 2006-05-17 |
MY128213A (en) | 2007-01-31 |
CN1196602C (en) | 2005-04-13 |
JP2002534782A (en) | 2002-10-15 |
EP1342585A1 (en) | 2003-09-10 |
AU4199799A (en) | 2000-08-01 |
EP1657074B1 (en) | 2007-05-30 |
US6214520B1 (en) | 2001-04-10 |
US6114088A (en) | 2000-09-05 |
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