US20010037822A1 - Vapor drying system and method - Google Patents
Vapor drying system and method Download PDFInfo
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- US20010037822A1 US20010037822A1 US09/905,025 US90502501A US2001037822A1 US 20010037822 A1 US20010037822 A1 US 20010037822A1 US 90502501 A US90502501 A US 90502501A US 2001037822 A1 US2001037822 A1 US 2001037822A1
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- vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Abstract
The present apparatus is a method and system for treating and drying the surface of an object. According to the described method, with a wet object positioned in a vessel, a drying vapor is introduced into the vessel. The drying vapor condenses on the surface of the object and reduces the surface tension of the residual process fluid, causing the residual process fluid to flow off of the surface. In one embodiment, wet processing of the object and a subsequent evacuation of process fluid is carried out in the vessel prior to introduction of the drying vapor.
Description
- This application claims the benefit of U.S. Provisional Application No. 60/103,802, filed Oct. 9, 1998.
- The present invention relates generally the field of systems for processing and cleaning objects requiring a high level of cleanliness, and more particularly to a dryer system and drying process for drying such objects using a drying vapor.
- In certain industries there are processes that must be used to bring objects to an extraordinarily high level of cleanliness. For example, in the fabrication of semiconductor wafers, multiple cleaning steps are typically required to remove impurities from the surfaces of the wafers before subsequent processing. The cleaning of a wafer, known as surface preparation, has for years been performed by collecting multiple wafers into a batch and subjecting the batch to a sequence of chemical and rinse steps and eventually to a final drying step. A typical surface preparation procedure involves bathing the wafers in an etch solution of HF and HCl to remove surface oxidation and metallic impurities. Afterwards, the wafers are thoroughly rinsed in high purity deionized water (DI) to remove etch chemicals from the wafers. The rinsed wafers are then dried using one of several known drying processes.
- Currently, there are several types of tools and methods used in industry to carry out the surface preparation process. The tool most prevalent in conventional cleaning applications is the immersion wet cleaning platform, or “wet bench.” In wet bench processing, a batch of wafers is dipped into a series of process vessels, where certain vessels contain chemicals needed for clean or etch functions, while others contain deionized water (“DI”) for the rinsing of these chemicals from the wafer surface. Megasonic energy may be imparted to the wafers using piezoelectric transducers coupled to one or more of the vessels in order to more thoroughly clean the wafer surfaces. In the final process vessel, the rinse fluid is removed from the wafer surface using a solvent such as isopropyl alcohol (IPA). IPA is an organic solvent known to reduce the surface tension of water.
- In one IPA drying method, described in U.S. Pat. No. 5,226,242 (Schwenkler), wet substrates are moved into a sealed vessel and placed in the processing region of the vessel. An IPA vapor cloud is generated in a vapor-generating region of the vessel and is directed into the processing region, where it removes water from the wafers. This drying technology is highly effective in removing liquid from the wafers, but is not easily adaptable to single vessel systems in which chemical processing, rinsing, and drying can be carried out in a single vessel.
- Environmental concerns have given rise to efforts to improve drying technology in a manner that minimizes IPA usage. One such improved drying technology is the Marongoni technique, which is illustrated schematically in FIG. 1. In one application of the Marongoni technique, an IPA vapor is condensed on top of the rinse water containing the wafers while the wafers are slowly lifted from the processing vessel. The concentration of the dissolved vapor is highest at the wafer surfaces S and lower at regions of the rinse fluid that are spaced from the wafer surfaces. Because surface tension decreases as IPA concentration increases, the surface tension of the water is lowest at the wafer surface where the IPA concentration is highest. The concentration gradient thus results in “Marongoni flow” of the rinse water away from the surfaces of the wafers as indicated by arrow A. Rinse water is thereby stripped from the wafer surfaces, leaving the wafer surfaces dry.
- Another application of the Marongoni technique is described in U.S. Pat. No. 4,911,761 (McConnell), which describes a single chamber system for cleaning, rinsing and drying wafers. As described in the patent, a batch of wafers is placed into a single closed vessel, and process fluids are passed from top to bottom sequentially through the vessel. The method further employs a process called “direct displacement drying” to dry the wafers after the final rinse. The drying step is accomplished using an IPA drying vapor introduced into the vessel as the rinse fluid is slowly drained. The IPA vapor displaces the receding rinse water and condenses on the surface of the rinse water in the vessel, creating Marongoni flow from the wafer surfaces into the receding rinse water and resulting in dry wafers.
- While providing satisfactory drying results and reducing IPA usage, the direct displacement drying method leaves further room for improvement. For example, because this process relies in part on the pulling (or surface tension) by the descending rinse fluid in the process vessel, it is not adaptable to systems in which rinsing is carried out in a separate vessel and then transferred into a drying vessel. Moreover, the rate at which the deionized water is drained from the vessel must be closely controlled to achieve full benefit of the Marongoni effect.
- In a cleaning and drying process described in U.S. Pat. No. 5,571,337 (Mohindra), wafers within a vessel are exposed to process chemicals and subsequently rinsed in DI water to remove residual chemicals. After rinsing, an IPA cleaning step is carried out which utilizes Marongoni flow to remove remaining particles from the wafer surface. This cleaning step involves directing an IPA vapor into the vessel while the DI rinse water is slowly drained, creating Marongoni flow from the wafer surfaces into the receding rinse water. According to the patent, if the rate at which the rinse water recedes is carefully controlled, this flow can be made to carry residual particles away from the wafer surfaces and results in cleaner wafers. In addition to cleaning particles from the wafers, the Marongoni flow during the IPA step removes a substantial amount of rinse water from the wafers. However, water droplets remain on the wafer surfaces at the end of the IPA step, and so hot nitrogen gas is directed onto the wafers to evaporate the residual water droplets. While this process is desirable in that it reduces IPA usage over conventional drying processes, the residual water droplets are problematic in that they may leave impurities on the wafer surfaces.
- An object of the present invention is thus to provide an improved drying method and apparatus which is thorough, which minimizes solvent usage, and which is highly adaptable for use in a variety of surface preparation systems and processes.
- The present apparatus is a method and system for treating and drying the surface of an object. According to the described method, with a wet object positioned in a vessel, a drying vapor is introduced into the vessel. The drying vapor condenses on the surface of the object and reduces the surface tension of the residual process fluid, causing the residual process fluid to flow off of the surface. In one embodiment, wet processing of the object and a subsequent evacuation of process fluid is carried out in the vessel prior to introduction of the drying vapor.
- FIG. 1 is a side elevation view of a wafer schematically illustrating Marongoni flow from a wafer surface during Marongoni drying processes.
- FIG. 2 is a schematic representation of a first embodiment of a drying system in accordance with the present invention.
- FIG. 3 is a flow diagram illustrating examples of process steps which may be carried out using the drying systems of FIGS. 2 and 8 during an HF last (etch), rinse, and dry process.
- FIG. 4A is a cross-sectional front view of a drying vessel in accordance with the present invention, together with a schematic illustration of drying system components.
- FIG. 4B is a cross-sectional end view of the drying vessel of FIG. 4A.
- FIG. 4C is a bottom perspective view of the vessel, in which the lid and dump door components are not shown.
- FIG. 5 is an exploded view of the drying vessel of FIG. 4A, showing the lid in the closed position.
- FIG. 6 is an exploded view of the drying vessel of FIG. 4A.
- FIG. 7 is an exploded view of the lid for the drying vessel of FIG. 4A.
- FIGS.8A-C are side elevation views of a wafer schematically sequentially illustrating the process of removing rinse water and condensed IPA from the surface of the wafer as described with respect to the first and second embodiments.
- FIG. 9A is a schematic representation of a chemical injection system useful in connection with the first and second embodiments, the figure includes a front elevation view of the chemical storage vessel.
- FIG. 9B is a side elevation view of the chemical storage vessel of the chemical injection system of FIG. 9A.
- FIG. 10 is a schematic representation of a chemical injection system useful in connection with the first and second embodiments, and particularly for use in dispensing a drying compound into drying vapor generation chamber.
- The present invention is a vapor drying system and method that is highly adaptable to use with various processing methods. For example, the system and method may be used for drying alone, in which case wet objects may be transferred from a separate wet treatment vessel into the vessel of the drying system. As another example, the vessel of the drying system may be used for surface passivation processes that precede drying, such as etch, ozone rinse, and DI rinse processes use in wafer processing, as well as for the subsequent drying process.
- The system and method according to the present invention will be described in the context of surface preparation for semiconductor substrates. This is done for purposes of illustration only and is not intended in a limiting sense. The system and method of the present invention are equally suitable for use on other objects for which a high level of cleanliness is needed. Examples of such other objects include, but are not limited to flat panel displays, optical and magnetic recording disks, and photomasks. It should also be noted that, although referred to as a “drying system and method” the system and method of the present invention are adaptable for use in a variety of applications, which may or may not include chemical processing and rinse steps.
- It is also noteworthy that, while isopropyl alcohol (“IPA”) is identified herein as the preferred drying compound/vapor utilized in the system, the present invention is equally suitable for use with other drying compounds/vapors now known or developed in the future. Such alternatives are considered to lie within the scope of the present invention. Examples include other polar organic compounds like IPA, as well as methane, HFE, other alcohols and other substances that are substantially free of polar organic compounds, including argon and nitrogen.
- Structure—First Embodiment
- One embodiment of a system according to the present invention is illustrated schematically in FIG. 2. Generally speaking,
system 10 includes a rinse/dry vessel 12, amoveable lid 14, a dryingvapor generation chamber 16 remote from the vessel, achemical injection component 68, an exhaust andreclamation component 70, and various drains and inlets described in greater detail below. - The rinse/
dry vessel 12 is a process vessel of any size and shape suitable for receiving and processing a batch of semiconductor wafers.Vessel 12 preferably has aninner tank section 18 surrounded at its side, front and rear walls by anoverflow weir 20. Theweir 20, which is of a type found on many conventional rinse tanks, allows processing fluids to cascade over the vessel walls during certain applications. Anoverflow drain 22 is formed in theweir 20, and aprocess drain 24 is formed in the base of theinner tank section 16.Valve 26 controls the opening and closing of thedrain 24. Aseparate drain 28 andvalve 30 are used for IPA drainage. Acondenser 32 is provided for condensing exhausted IPA into a disposable form. - A source of rinse
fluid 34 is fluidly coupled to a rinse fluid inlet 36 in the base of thevessel 12. The system may be provided with a filter for filtering the rinse fluid as it flows towards the vessel, although many fabrication facilities come equipped with separate filtering systems that yield rinse fluid of the appropriate level of purity. During use, rinse water flows into the vessel, passes through the vessel and cascades over the interior vessel walls to theoverflow weir 20. The rinse fluid exits the weir viadrain 22 for disposal. -
Lid 14 is formed of atop wall 40 and fourside walls 42 descending from thetop wall 40 to form a bottomless enclosure. Thelid 14 is moveable by arobotic system 44 between a lowered position and an elevated position. In the lowered position,side walls 42 extend into theinterior tank section 18 and make sealing contact with the tank bottom, while thetop wall 40 extends across the opening at the top of the vessel. When fully lowered thetop wall 40 preferably makes sealing contact with the sidewalls forming the vessel interior and overflow weir sections. This arrangement prevents vapors from escaping from the vessel during processing, and it also prevents any gases or particulate matter that may be in the surrounding environment from passing into the vessel. - In the elevated position, the
lid 14 is spaced from thevessel 12 by a sufficient distance to allow wafers W on awafer cassette 46 to be lowered into and removed from thevessel 12.Robotics system 44 may be configured to move thelid 14 along a vertical axis between the lowered and raised positions. It may alternatively be configured for multi-axis movement, so as to position the lid above and to one side of the vessel opening for movement of wafers into and out of the vessel. - As with the
vessel 12, thelid 14 is formed of a material that is inert to the process chemicals that will be used in the system. The lid is further equipped with a heating system that maintains thelid walls - Naturally, many systems may be conceived of for heating the lid. One system found useful for this purpose relies upon a system of heating elements embedded in the
walls fluid conduits 48 coupled to asource 50 of hot fluid, such as heated deionized water. The heated fluid is circulated through the conduits in thewalls conduits 48 within thewalls -
Top wall 40 of the lid is equipped with one ormore inlets 51 that are used to introduce vapors into the vessel. These inlets provide the N2 gas used to purge the vessel of air so as to prevent oxidation of wafers inside the vessel, as well as the drying vapors used to effect drying. - In one embodiment of the present invention, drying is carried out using an initial IPA step in which IPA vapor is carried into the vessel by heated N2 gas. The IPA step is followed by the step of introducing heated N2 into the vessel to volatilize condensed IPA remaining on the wafers and cassette. The N2 used for both purposes is heated by an N2 heater 52, which receives the nitrogen from an N2 source 54. Plumbing is provided for flowing the heated N2 into the
IPA chamber 16 when needed for the N2/IPA drying step, and for flowing the heated N2 directly into the vessel when needed for the second, heated N2, drying step.Valve 56 allows N2 flow into the IPA chamber to be stopped and started, andvalve 58 similarly controls N2 flow directly into the vessel via the bypass plumbing. When opened, an N2/IPA outlet valve 59 allows N2/IPA to flow from thechamber 16 into thevessel 12. -
IPA chamber 16 is preferably an electropolished high purity stainless steel chamber having abottom wall 60 and aheating element 61 adjacent to thebottom wall 61 for heating the bottom wall. During use, a pre-measured quantity of liquid IPA is fed fromIPA reservoir 62 onto the bottom wall ofchamber 16. - A source of
room temperature N 2 66 is connected tolid 14 and is configured to allow gas fromsource 66 to flow into the vessel viainlets 51. - If the system is to be utilized for chemical processes such as cleaning and/or etching, it may further be provided with a
chemical dispensing component 68 which measures process chemicals and injects them into the DI water stream, which carries them intovessel 12. - Operation—First Embodiment
- The system of FIG. 2 is adaptable for use in a variety of applications, including those which involve chemical processing and rinse steps carried out within or external to the
vessel 12. FIG. 3 is a simplified flow diagram illustrating one use of the drying system of FIG. 2, in which surface oxidation is removed using an HF/HCl etch, and in which the wafers are subsequently rinsed, and dried. - IPA vapor generation is preferably carried out in the early stages of the process, but in any event prior to the moment at which the wafers are ready for drying.
Step 200. IPA vapor is created within theIPA chamber 16 by injecting a pre-measured quantity of IPA liquid ontosurface 60 of chamber, which is heated byheating element 61. The IPA is heated onsurface 60 to a temperature preferably less than the boiling point of IPA (which is 82.4° C. at 1 atmosphere). Heating the IPA increases the rate at which IPA vapor is generated and thus expedites the process, creating a dense IPA vapor cloud. - The process preferably begins with
lid 14 positioned away from the opening in the vessel, and with heated DI circulating withinfluid conduits 48 to heat thewalls Step 204. - A wafer cassette46 (FIG. 2) carrying wafers W is lowered into the vessel and positioned on the
wafer support 47.Step 204.Lid 14 is next moved into a position suspended above the vessel (such as the position shown in FIG. 2). N2 gas from a source 66 (which may, but need not be, the same as source 54) is introduced into the vessel viainlets 50 to purge the system of air. - The wafers remain immersed in the process chemicals for a predetermined period of time as needed to complete etching.
Step 208. At the end of the etch period, rinse fluid is pumped into thevessel 12 via inlet 36, and cascades into theoverflow weir 20 and out theoverflow drain 22.Step 210. If an ozone rinse is desired, the wafers are next rinsed using ozonated DI water.Step 212. This may be carried out by injecting ozone into the rinse water via a separate inlet in thevessel 12, or into the DI stream usingchemical dispensing component 68. After the ozone rinse, pure DI rinsing continues for a sufficient period of time to thoroughly rinse the wafers and cassette,Step 214, after which time theprocess drain 24 is opened to quickly drain the rinse fluid from the vessel (“quick dump”).Step 216. While the rinse water is being discharged,lid 114 is moved byrobotics system 44 into its lowered position within the vessel. Preferably, N2 gas fromambient temperature source 66 flows out of inlet(s) 51 as the lid is lowered in order to maintain the purged environment within the vessel. - As discussed, generation of IPA vapor is initiated within the
IPA chamber 16 early in the process. Shortly before the drying step,valve 56 is briefly opened, permitting heated N2 gas to fill thechamber 16. Once the vessel has been drained and the lid fully lowered,valve 59 is opened, causing the heated N2 to carry the IPA vapor into the vessel.Step 218. - As is typical of hot vapors, the IPA vapor condenses on the cool surfaces with which it comes into contact. Because the lid's walls are heated, the hot IPA vapor condenses on the relatively cool wafer surfaces rather than on the lid walls. It should be appreciated that this use of heated walls to promote condensation on the wafers allows IPA usage to be minimized, since there is little IPA “wasted” due to condensation on vessel surfaces.
- The vapor condenses on the wafers, breaking the surface tension of water on the wafers and thus shearing the rinse water from the wafer surfaces.
- At the end of the IPA drying step,
valve 59 is closed, andbypass valve 58 is opened, causing heated N2 to flow directly into the vessel.Step 220. It should be noted that additional gas inlets 51 a (FIG. 2) may be positioned within thevessel 12 and oriented to direct the gas onto the cassette to facilitate drying during this step. The heated gas completes the drying process by volatilizing condensed IPA that remains on the wafer and cassette surfaces. - The heated N2 gas removes the condensed IPA by evaporation and exhausts the IPA through
IPA drain 28 intocondenser 32.Condenser 32 condenses the IPA to a liquid form suitable for disposal. - Afterwards,
lid 14 is withdrawn byrobotics system 44, and the fully dried wafers and cassette are removed from the vessel.Step 222. - As discussed, the
system 10 is useful for other processes, as well. For example, thesystem 10 may be utilized as a component of a larger system in which wafers are processed and rinsed in a separate vessel. For an operation of that type, use of thesystem 10 might begin just after the rinse steps, with wet wafers being lowered into thevessel 12 for drying.Steps Steps - Structure—Second Embodiment
- FIGS. 4A through 7 illustrate a second embodiment of a drying system utilizing concepts in accordance with the present invention. The second embodiment is similar to the first embodiment, and differs from the first embodiment primarily in the structure and use of the lid.
- Referring to FIGS. 4A and 4B, the second embodiment includes a
vessel 112 of any size and shape suitable for receiving and processing a batch of semiconductor wafers, and alid 114 used to seal the interior of the vessel from the external environment.Vessel 112 andlid 114 are formed of materials, such as PVDF or PFA, which are inert to chemicals used in the process environment. - A vessel having the general characteristics of
vessel 112 is the Dynaflow™ rinse tank available from SCP Global Technologies, Boise Id.Vessel 112 is preferably formed of aninner tank section 118 surrounded at its side, front and rear walls by anoverflow weir 120 for use with processes requiring process or rinse fluids to cascade over the vessel walls. Its walls are preferably serrated along their top edges to minimize fluid accumulation on the edges.Weir 120 has an interior bottom surface angled from the horizontal so as to facilitate flow of fluids towards adrain 122 positioned at one end of theweir 120. A conventional fill sensor (not shown) may be located within the vessel for use in confirming that liquid levels within theinner tank 118 are sufficiently high to completely immerse the wafers during use. - Pluralities of fluid inlets136 are spaced longitudinally and laterally along the vessel bottom. A
fluid line 134 connects a deionized water source tocavities 135 beneath the inlets. Fluid flowing fromfluid line 134 intocavities 135 pressurizes the cavities, resulting in high pressure fluid flow through inlets 136 intovessel 112. The bottom wall ofinner tank 118 preferably includes beveled side sections as shown in FIG. 4A to promote uniform fluid flow through the vessel from inlets 136. - As described with respect to the first embodiment, a chemical dispensing component is connected to the
fluid line 134 to allow process chemicals to be injected into the DI stream when needed. - An
elongate opening 123 is formed in the bottom wall of theinner tank section 118.Opening 123 extends longitudinally along the bottom wall from an area adjacent to the front of the tank to an area adjacent to the back of the tank. Adump door 124 seals theopening 123. An automaticdump door assembly 126 controls movement of thedump door 124 away from opening 123 to quickly emptyinner section 118, and further controls movement ofdump door 124 back into theopening 123 to re-seal the tank. A sensor of a type conventionally used with dump door assemblies may be provided to verify that the dump door has been opened or closed in accordance with instructions from the system controller. - When opened, the dump door permits quick discharge of fluids from the vessels into a
catch basin 72 beneath the vessel. The system includes an exhaust and reclamation component that includes awaste line 74 that flows from the catch basin to an acid waste site within the foundry. A separateIPA disposal outlet 128 is positioned in an upper region of thedischarge tank 72. During use, IPA vapor is exhausted (by N2 gas flowing frominlet 150, throughdump opening 123 and into the catch vessel 72) throughoutlet 128 to acondenser 132 where it is condensed for disposal. - The components of the system used to generate N2 gas and drying vapor for delivery into the vessel are similar to those described above with reference to the first embodiment and so they will not be described again. These components are labeled in FIG. 4A using numbering that is consistent with their counterparts shown in FIG. 3 in connection with the first embodiment.
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Vessel 112 includes a hingedlid 114. A pair ofarms 116 extends from thelid 114. Each arm is coupled to acylinder 117 having a lower end mounted to the stage or other support structure (not shown) used to hold the vessel in a process platform.Cylinders 117 are operative witharms 116 to pivot the lid between opened and closed positions. When in the closed position, lid seals against aflange 119 mounted onvessel 112 to prevent migration of fumes from the vessel and to further prevent particles from the surrounding environment from entering the vessel during use. To optimize sealing between the lid and the flange, one or more seals 121 (FIG. 6) formed of a suitable sealing material such as Teflon® or Chemraz, are positioned onlid 114 and/orflange 119. - A fitting150 extends from the top of
lid 114 and provides the inlet through which N2 gas and IPA vapor enter the vessel.Lid 114 is provided with manifolding that promotes uniform flow of gas/vapor into the vessel and onto wafers situated within the vessel. This manifolding will be best understood with reference to FIG. 7. As shown,lid 114 is formed of atop plate 170,middle plate 172 andbottom plate 174. Formed in the underside of thetop plate 170 are a pair of grooves 176 (see also FIG. 4A) that intersect to form an X-shaped pattern. Fitting 150 is fluidly coupled to the grooves, preferably at their intersection point, to direct gas/vapor passing through the fitting into the grooves. -
Bottom plate 174 has a system ofgrooves longitudinal grooves 178 and a pair oflateral grooves 180.Longitudinal grooves 178 are lined with a plurality of small holes which are the entry points for N2 and IPA vapor flowing from thelid 114 into thevessel 112. -
Middle plate 172 is sandwiched between the top andbottom plates middle plate 172 forms a series of channels with thegrooves - Middle plate includes
throughholes 182 that extend between its upper and lower surfaces.Throughholes 182 provide a path through which N2 gas and IPA vapor flow from the X-shaped channel system, through the middle plate, and into the series of channels formed betweenlower plate grooves - To facilitate distribution of N2 and IPA vapor through
lid 114,throughholes 182 may be aligned with the four corners of the “X” formed by the two grooves of the top plate and with the intersection points betweenlongitudinal channels 178 andlateral channels 180 onlower plate 174. During use, the gas/vapor flows through fitting 150 into the X-shaped channels formed between the top and middle plates, then throughthroughholes 182 into the system of channels formed between the middle and bottom plates. Ultimately, the gas/vapor flows into the vessel through the small openings formed in thelongitudinal grooves 180. -
A process controller 184 is electronically coupled to the lid robotics, dumpdoor assembly 126,chemical injection component 68 and the various valves and sensors associated with operation of the system.Controller 184 is programmed to govern control and timing of these components to automatically open and close the valves, activate the lid and dump door, and regulate flow of fluids and gases etc. in accordance with a process recipe appropriate for the treatment process being carried out. A controller suitable for this purpose is a MCS microprocessor controller available from Preco Electronics, Inc. Boise, Id. However, any suitable process control computer can be used. It should be noted that the electronic coupling between the controller and associated components is not represented in the drawings only for reasons of clarity. - A
chemical injection system 300 useful as thechemical injection component 68 for the system of the first and second embodiments in shown in FIGS. 9A and 9B.Chemical injection system 300 is a desirable one in that it permits precise measurement of process chemicals despite the variations in pressure that are inherent to the bulk chemical supplies typically used at foundries. Timing and control of the various valves utilized by the chemical injection system is governed byprocess controller 184 or by a separate controller. - Referring to FIG. 9A,
chemical injection system 300 includes achemical storage vessel 302 coupled to abulk chemical supply 304. Chemical storage vessel includes amain chamber 306 and aside chamber 308 extending from the main chamber. The interiors of the main and side chambers are contiguous with one another. In addition, afluid line 310 extends between the main and side chambers. Aliquid level sensor 312 is positioned to monitor the liquid level influid line 310 and to provide feedback concerning the liquid level to system controller 184 (FIG. 4A). Avent 314 extends from a wall of the primary vessel. - A dispense vessel316 is coupled to
chemical storage vessel 302 byline 318, which includes reducedflow orifice 320. Avalve 322 is positioned downstream oforifice 320, and a DI line joinsline 318 further downstream ofvalve 322. Avalve 324 governs flow of DI water fromDI source 326 into vessel 316. - An
outlet line 328 extends from dispense vessel 316 and includes avalve 330 and a reducedflow orifice 332.Liquid level sensor 336 is positioned inline 328 to detect when fluid is present in line 328 (i.e. oncevalve 330 has been opened). - A
side branch 334 connectsoutlet line 328 with an upper section of vessel 316. Further downstream ofside branch 334 is adispensing line 338 fluidly coupled with thevessel 112. - There are four general steps involved during operation of
chemical injection system 300. The first is the bulk fill step, in whichchemical storage vessel 302 is filled with chemical frombulk supply 304. The second is timed secondary fill step, in which the amount of chemical needed to treat a batch of wafers is passed fromchemical storage vessel 302 into dispense vessel 316. The secondary fill step is accomplished by openingvalve 322 for a period of time predetermined to cause the desired volume to be dispensed into vessel 316. Third,valve 330 is opened to allow the chemical from vessel 316 intoline 338. As will be discussed in detail, this step is timed and utilizessensor 336 to verify the accuracy of the secondary fill step. Finally, a dispensing step is carried out in which the chemical is carried fromline 338 into the process tank by a DI stream passing into and through vessel 316. - The bulk fill step is typically carried out when the volume of the
chemical storage vessel 302 has decreased to a predetermined minimum level.Valve 303 which lies betweenvessel 302 and bulk supply is opened, causing chemical to flow from the bulk supply intovessel 302. All other valves in the system remain closed throughout the bulk fill step. -
Fill sensor 312 is configured to provide feedback tocontroller 184 indicating that the fluid level inchemical storage vessel 302 has reached a predetermined level. The level will preferably be selected to correspond to the volume of chemical needed to treat a predetermined number of wafer batches invessel 112. - Once
fill sensor 312 detects thatchemical storage vessel 302 has been filled to the desired volume,valve 303 is closed. Next,valve 322 is opened to initiate the secondary fill step into vessel 316. The system allows an accurate fill of vessel 316 by monitoring the time for whichvalve 322 has been opened. For example, the flow rate of the system may be such that it takes four minutes to dispense 200 ml into the vessel 316. Oncevalve 322 has been opened for the required duration, it is closed, thereby halting fluid flow into vessel 316. Reducedflow orifice 320 causes fluids dispensed into dispense vessel 316 to flow slowly, so as to insure a high level of accuracy during the secondary fill step by minimizing the effect of the split second delay between issuance of the “close” control signal tovalve 322 and the actual closing of the valve. It should be noted that the system is useful for applications in which successive runs of the system require different dispense volumes. Simply changing the amount of time for whichvalve 322 will be opened during the secondary fill step can change the volume of chemical that will be dispensed. - After
valve 322 has been closed,valve 330 is opened to permit chemical to flow from dispense vessel 316 into dispenseplumbing 338, which is preferably large enough to contain the entire dispense volume. Onceline 328 has been emptied,sensor 336 turns off, indicating that vessel 316 has been completely evacuated. The system registers the time lapsed between the opening ofvalve 330 and the turning off ofsensor 336, which is the amount of time taken to empty vessel 316. The measured time is compared by the system to a value saved in the system's software correlating to the amount of time that it should take for the desired dispense volume to exit vessel 316 given the known rate at which fluid will flow from vessel 316. This step is done in order to verify the initial time dispense into vessel 316. If the comparison reveals a possible error in the amount of chemical dispensed, remedial measures are taken before wafers are transferred intovessel 112. Such remedial measures may include disposing of the chemical viadrain valve 339 and repeating the secondary fill step. - Shortly afterwards, when it is time to dispense chemical into the
vessel 112,valve 324 is opened, causing DI water to flow fromsource 326, into dispense vessel 316, and then intoplumbing 338 vialines flow orifice 332 inline 328, only a small portion of the DI water flows throughline 328 where it serves to rinse chemical from the line. A larger percentage of the DI fills the vessel 316 and flows throughside branch 334 intoline 338, pushing the chemical inline 338 intotank 112 while also rinsing vessel 316 andlines valve 324 opened for a predetermined amount of time known to result in dispensing of the desired volume, or by closingvalve 324 in response to feedback from a liquid level sensor in the vessel 340. - FIG. 10 shows a
chemical injection system 400 useful for dispensing drying compound (such as IPA or another suitable compound) into the drying vapor generation chamber (chamber 16, FIGS. 2 and 4A).Chemical injection system 400 includes achemical storage vessel 402 coupled to a bulk supply of dryingcompound 404. Afluid line 410 extends between upper and lower portions ofvessel 402. Aliquid level sensor 412 is positioned to monitor the liquid level influid line 410 and to provide feedback concerning the liquid level to system controller 184 (FIG. 4A). Avent 414 extends from a wall ofvessel 402. - A dispense
vessel 416 is coupled tochemical storage vessel 402 by a system of plumbing formed ofline 417,reservoir 418 a, andlines 418 b through 418 f. A reducedflow orifice 420 is positioned inline 417 and avalve 422 is positioned downstream oforifice 420. - The opening in
reservoir 418 a at its connection withline 418 c is significantly smaller than the diameter of thepipe forming line 418 c. For example,reservoir 418 a may include a ½-inch diameter opening leading to a 1-inch diameter line 418 c.Lines sensor 436 is located inline 418 d and avalve 437 is positioned belowsensor 436. -
Vessel 416 and its associated plumbing 418 a-f are proportioned to contain and precisely dispense the entire quantity of chemical needed for a single dispense operation. They are arranged such that detection of a fluid level bysensor 436 occurs when dispensevessel 416 and its associated plumbing has been filled with slightly more than the required volume of chemical for the process. Dispense vessels and plumbing of different volumes may be used to replacevessel 416 and its plumbing when different dispense volumes are needed. - A
dispensing line 428 extends from dispensevessel 416 and includes avalve 430. Dispensingline 428 is fluidly coupled with dryingvapor generation chamber 16 for dispensing a drying compound into the chamber for vaporization. - There are three general steps involved during operation of
chemical injection system 400. The first is the bulk fill step, in whichchemical storage vessel 402 is filled with chemical drying compound frombulk supply 404. The second is a secondary fill step, in which the amount of chemical needed for use in drying a batch of wafers is passed fromstorage vessel 402 into dispensevessel 416 and its plumbing. - Third,
valve 430 is opened to allow the chemical fromvessel 416 and its plumbing intochamber 16. - The bulk fill step is typically carried out when the volume of the
chemical storage vessel 402 has decreased to a predetermined minimum level.Valve 403 is opened, causing chemical to flow from the bulk supply into the vessel.Valve 422 remains closed throughout the bulk fill step. -
Fill sensor 412 is configured to provide feedback tocontroller 184 indicating that the fluid level inchemical storage vessel 402 has reached a predetermined level. The level will preferably be selected to correspond to the volume of chemical needed to carrying out a predetermined number of drying procedures. - Once
fill sensor 412 detects thatchemical storage vessel 402 has been filled to the desired volume,valve 403 is closed. Next,valve 422 is opened to initiate the secondary fill step intovessel 416. It should be noted thatvalve 437 inline 418 d remains closed during the secondary fill. - During the secondary fill, fluid flows through
orifice 420, filling the portion ofline 428 that lies upstream ofvalve 430, then fillingvessel 416,line 418 b and thenreservoir 418 a. Next, fluid cascades fromreservoir 418 a intoline 418 c and into the portion ofline 418 d that sits aboveclosed valve 437. Fluid also rises fromvessel 416 into the portion ofline 418 d that lies belowvalve 437, and flows intolines sensor 436 detects a fluid level, the calibrated fluid volume has been achieved. In response,valve 422 is closed, thereby halting fluid flow intovessel 416. Shading in FIG. 10 represents the calibrated volume of fluid at the end of the secondary fill step. - After
valve 422 has been closed,valve 430 is opened to permit chemical to flow from dispensevessel 416 intochamber 16. It should again be noted that at thisstage valve 437 remains closed. - After
valve 430 has been opened for a predetermined amount of time known to dispense the calibrated volume of chemical, it is closed. Becausevalve 437 remains closed during the secondary fill, a small volume of fluid remains inline 418 c and in the portion ofline 418 d that is abovevalve 437.Valve 437 is next opened to allow this small volume of fluid to flow intovessel 416 where it will form a portion of the calibrated volume measured during the following secondary fill step. This small volume corresponds to the amount of volume over the required process volume that will enter the system as a result of the inability ofvalve 422 to close instantaneously whensensor 436 detects a liquid level. - Operation—Second Embodiment
- Operation of the second embodiment will next be described with reference to FIG. 3 and in the context of a process in which oxidation is removed using an HF/HCl etch, and in which the wafers are subsequently rinsed, and dried. In a preferred embodiment, the described sequence of steps occurs automatically in accordance with a process recipe pre-programmed into
controller 184. In other words, management of the chemical processing times, rinse times, vessel evacuation times, flow rates, waste disposal, chemical measurement, dispensing and injection etc. is governed byprocess controller 184. - IPA vapor generation is preferably carried out in the early stages of the process, but in any event prior to the moment at which the wafers are ready for drying. IPA vapor is created within the
IPA chamber 16 by injecting a premeasured quantity of IPA liquid ontoheated surface 60 of chamber in the manner discussed with reference to chemical injection system 400 (FIG. 10). In one embodiment, the amount of IPA utilized for a batch of fifty 200-mm diameter wafers is approximately 50-150 ml. The IPA is heated onsurface 60 to a temperature preferably less than the boiling point of IPA (which is 82.4° C. at 1 atmosphere). Heating the IPA increases the rate at which IPA vapor is generated and thus expedites the process, creating a dense IPA vapor cloud. Maintaining the IPA temperature below boiling prevents impurities in the IPA liquid from becoming airborne where they are apt to be carried into contact with the wafers. - To begin processing,
vessel 112 is filled with an etch solution of DI water and etch chemicals (for example, HF and HCl). For more even mixing, the etch chemicals may be injected into the DI stream as it flows into the vessel as discussed in connection with the chemical injection system 300 (FIGS. 9A and 9B). - With
lid 114 opened, a wafer cassette carrying wafers W is lowered into the vessel and positioned on a wafer support within the vessel.Lid 114 is next pivoted into a closed position, causing the vessel to be sealed byseal 121. N2 gas (preferably at room temperature) from a source 66 (which may, but need not be, the same as source 54) is introduced into the vessel viafixture 150 to purge the system of air. Ambient N2 continues to flow into the vessel at a low flow rate until drying begins as later described. - After the wafers have been etched, rinse fluid is pumped into the
vessel 112 via DI inlets 136, and cascades into theoverflow weir 120 and out thedrain 122. If an ozone rinse is desired, the wafers are next rinsed using ozonated DI water. This may be carried out by injecting ozone into the rinse water via a separate inlet in thevessel 112, or directly into the DI stream by the chemical dispensing component. Rinsing continues for a sufficient period of time (for example, 3-5 minutes, but will vary with applications) to thoroughly rinse the wafers and cassette. After the desired rinse time, the dump door assembly quickly is activated to move thedump door 124 to its opened position to quickly discharge the rinse fluid from the vessel (“quick dump”). Preferably complete evacuation of the fluid in the vessel occurs in a very short time, and preferably in less than 5 seconds. The discharged fluid moves intocatch basin 72, then drains fromcatch basin 72 into the foundry's acid waste disposal viawaste line 74. Low flow ambient N2 continues flowing into the vessel during the quick dump step. - Just prior to the drying step,
valve 56 is briefly opened, permitting heated N2 gas to fill theIPA generation chamber 16, which already contains the rich IPA vapor cloud as discussed above. Once the liquid in the vessel has been fully discharged,valve 59 is opened, causing the heated N2 (having a temperature of typically 80-90° C.) to carry the IPA vapor into the vessel. The IPA and nitrogen utilized in the process are preferably high purity, such as “ppb” or parts per billion quality or 99.999% pure. - The N2/IPA flows into the vessel at a rate of approximately 25-100 standard liters per minute (slpm) for an IPA drying period preferably 2-5 minutes. The lower end of this range is preferred in that is leads to lower IPA emissions. The manifold arrangement in the
lid 114 promotes even distribution of IPA vapor through the channels in the lid and consequently an even flow of vapor through the inlets and onto the wafers. - The IPA vapor condenses on the wafers, forming a uniform concentration of IPA in the liquid adhering to the wafer surface. The condensed IPA breaks the surface tension of water on the wafers and causes the rinse water to shear off of the wafer surfaces. By the end of the IPA drying period, the rinse water will have been completely removed from the waters, cassette, and vessel walls, and will have been replaced by a layer of condensed IPA. The N2/IPA exits the vessel through dump opening 123 into
catch basin 72, where it is exhausted throughline 128, passed throughcondenser 132, and disposed of. - The quick dump and IPA vapor steps as described herein provide several advantages over the prior art. One advantage provided over conventional vapor dryers is that the wafers remain in a purged environment within
vessel 112 throughout the entire process, rather than being exposed to oxygen and particles as they are moved from a rinse vessel to a drying vessel. Other advantages will be appreciated with reference to FIGS. 8A-8C. Referring to FIG. 8A, after the quick dump is performed, a carry over layer of water remains on the wafer surface. When IPA vapor begins to entervessel 112, it condenses on the surface of this carryover layer and diffuses into the water layer. As more IPA condenses on the water, it gradually decreases the surface tension of the water until the water eventually falls from the wafer surface. IPA vapor continues to enter thevessel 112 and condenses on the wafer surface, leaving a layer of condensed IPA on the wafer surface (FIG. 8B). - This method of water removal is particularly beneficial for wafers having high aspect ratios or severe topography, where many tight spaces exist within the wafer surface. Capillary forces are high in such tight spaces and it is thus difficult to remove water from them. The method of condensing IPA onto the carry over layer of water where it can work its way into the water and then into the wafer's tight geometries (and continuing to condense onto the wafer surface after the carryover layer has fallen from the wafer) facilitates drying even in those deeply or tightly-patterned regions.
- Moreover, the flow of condensed water and condensed IPA from the wafer surfaces promotes IPA/water rinsing of the wafer surfaces which facilitates removal of any particles that may remain on the wafers.
- Another advantage lies in that the quick dump step is performed so as to completely evacuate the vessel112 (or at least to drain fluid in the vessel to below the wafers) in a very short period of time, preferably under five seconds. This high velocity draining of the liquid is beneficial to stripping water (and any particles in the water) off the surfaces of the wafers. It thus facilitates water removal even before the IPA vapor step is initiated.
- Returning to FIGS. 3 and 4A, at the end of the IPA drying period,
valve 59 is closed, andbypass valve 58 is opened, causing heated N2 (preferably 80°-90° C.) to flow directly into the vessel at a higher flow rate of preferably 150-250 slpm. As with the first embodiment, additional gas inlets may be positioned within the vessel and oriented to direct the gas onto the cassette to facilitate drying during this step. - The heated N2 gas removes the condensed IPA from the wafers, cassette and vessel walls by evaporation (FIG. 8C). This IPA evaporation step is preferably carried out for approximately 2-5 minutes. The evaporated IPA is exhausted through
IPA drain 128 into condenser 130. Condenser 130 condenses the IPA to a liquid form suitable for disposal. The heated N2 gas additionally purges any IPA vapor remaining in the vessel intocatch basin 72 and throughcondenser 132 vialine 128. - At the end of the IPA evaporation step, a low flow (preferably 20 slpm) of N2 gas is resumed to maintain a clean environment within the vessel during removal of the wafers.
Lid 114 is opened and the fully dried wafers and cassette are removed from the vessel. - As discussed, the
system 110 is useful for other processes, as well. For example, thesystem 110 may be utilized as a component of a larger system in which wafers are processed and rinsed in a separate vessel. For an operation of that type, use of thesystem 110 might begin just after the rinse steps, with wet wafers being lowered into thevessel 112 for drying. As another example also illustrated in FIG. 8, for certain surfaces it may be desirable to skip the HF last step and to use the system to carry out an ozone rinse/rinse/dry process. An ozone rinse produces a hydrophilic surface on the wafer, whereas the HF last process described above produces a hydrophobic surface. The drying process described herein is beneficial in that it works well regardless of whether the wafer surface is hydrophilic or hydrophobic. - As yet another example, immersion of the wafers in HF may be immediately followed by a quick dump of the HF solution into the catch basin. The chemical quick dump is followed by the IPA vapor drying step (step218) and, if needed, the subsequent hot N2 step to remove condensed IPA from the wafers and cassette.
- While the subject invention has been described with reference to preferred embodiments, various changes and modifications could be made therein, by one skilled in the art, without varying from the scope and spirit of the subject invention as defined by the appended claims.
Claims (50)
1. A method of treating and drying the surface of an object, comprising the steps of:
(a) providing a vessel and at least one object having a surface;
(b) immersing the object in a process fluid in the vessel;
(c) discharging the process fluid from the vessel, leaving residual process fluid on the surface of the object;
(d) after discharging the process fluid from the vessel, introducing a drying vapor into the vessel, the drying vapor condensing on the surface of the object and reducing the surface tension of the residual process fluid, causing the residual process fluid to flow off of the surface.
2. The method of wherein the process fluid is deionized water.
claim 1
3. The method of wherein the process fluid is hydrofluoric acid.
claim 1
4. The method of , further including the step of introducing a heated gas into the vessel after step (d) to volatilize condensed drying vapor from the surface.
claim 1
5. The method of , wherein
claim 1
the method further includes the step of, prior to step (b), generating the drying vapor at a location remote from the vessel; and
step (d) includes the step of using a carrier gas to carry the drying vapor from the remote location into the vessel.
6. The method of wherein:
claim 5
step (a) further provides a chamber fluidly coupled to the vessel, the chamber positioned remotely from the vessel;
the generating step includes the step of heating a drying compound within the chamber to produce the drying vapor; and
step (d) includes passing the carrier gas through the chamber to cause it to carry the drying vapor into the vessel.
7. The method of , wherein the method further includes the step of reclaiming drying vapor from the vessel and condensing the reclaimed drying vapor to a liquid form.
claim 1
8. The method of wherein the drying vapor is formed from isopropyl alcohol.
claim 1
9. A method of treating and drying the surface of an object, comprising the steps of:
(a) providing a vessel and at least one object having a surface;
(b) immersing the object in a liquid chemical within the vessel to treat the object;
(c) introducing a rinse fluid into the vessel to rinse the chemical from the vessel and from the surface of the object;
(e) discharging the rinse fluid from the vessel, leaving residual rinse fluid on the surface of the object;
(f) after discharging the rinse fluid from the vessel, introducing a drying vapor into the vessel, the drying vapor condensing on the surface of the object and reducing the surface tension of the residual rinse fluid, causing the residual rinse fluid to flow off of the surfaces.
10. The method of further including the step of introducing a heated gas into the vessel after step (d) to volatilize condensed drying vapor from the surface.
claim 9
11. The method of , wherein
claim 9
the method further includes the step of, prior to step (b), generating the drying vapor at a location remote from the vessel; and
step (d) includes the step of using a carrier gas to carry the drying vapor from the remote location into the vessel.
12. The method of wherein
claim 11
step (a) further provides a chamber fluidly coupled to the vessel, the chamber positioned remotely from the vessel;
the generating step includes the step of heating a drying compound within the chamber to produce the drying vapor; and
step (d) includes passing the carrier gas through the chamber to cause it to carry the drying vapor into the vessel.
13. The method of , wherein the method further includes the step of reclaiming drying vapor from the vessel and condensing the reclaimed drying vapor to a liquid form.
claim 9
14. The method of wherein the drying vapor is formed from isopropyl alcohol.
claim 9
15. The method of wherein the rinse fluid is deionized water.
claim 9
16. The method of wherein the method includes the step of rinsing the objects in ozonated water.
claim 9
17. The method of , including the step of rinsing the object with ozonated rinse fluid prior to step (d).
claim 16
18. A method of treating and drying the surface of an object, comprising the steps of:
(a) providing a vessel, a remote chamber fluidly coupled to but remote from the vessel, and at least one object having a surface;
(b) treating the object using a wet processing procedure outside the vessel, to produce a wet object having residual process fluid thereon;
(c) positioning the wet object in the vessel;
(d) generating a drying vapor in the chamber; and
(e) passing a carrier gas through the chamber into the vessel, the carrier gas carrying the drying vapor from the chamber into the vessel, the drying vapor condensing on the surface of the object and reducing the surface tension of the residual process fluid, causing the residual process fluid to flow off of the surface.
19. The method of wherein step (d) includes heating a drying compound within the chamber to produce the drying vapor.
claim 18
20. The method of wherein the drying compound is heated to a temperature below its boiling point.
claim 19
21. The method of , wherein:
claim 18
step (a) further provides a lid for the vessel, the lid including at least one inlet;
the method further includes the step of sealing the vessel using the lid; and
in step (e) the carrier gas and drying vapor are passed into the vessel via the at least one inlet in the lid.
22. The method of wherein the drying compound is isopropyl alcohol.
claim 19
23. The method of , wherein the method further includes the step of reclaiming drying vapor from the vessel and condensing the reclaimed drying vapor to a liquid form.
claim 18
24. The method of , further including the step of introducing a heated gas into the vessel after step (e) to volatilize condensed drying vapor from the surface.
claim 18
25. A method of treating and drying the surfaces of an object, comprising the steps of:
(a) providing a vessel and at least one object having a surface;
(b) immersing the object in a treatment solution in the vessel, the treatment solution including hydrofluoric acid;
(c) discharging the treatment solution from the vessel;
(d) after the treatment solution has been fully discharged from the vessel and without first rinsing the object, introducing a drying vapor into the vessel, the drying vapor condensing on the surface of the object and reducing the surface tension of the residual treatment solution causing the residual treatment solution to flow off of the surfaces.
26. The method of , further including the step of introducing a heated gas into the vessel after step (d) to volatilize condensed drying vapor from the surface.
claim 25
27. The method of , wherein:
claim 25
the method further includes the step of, prior to step (b), generating the drying vapor at a location remote from the vessel; and
step (d) includes the step of using a carrier gas to carry the drying vapor from the remote location into the vessel.
28. The method of wherein
claim 27
step (a) further provides a chamber fluidly coupled to the vessel, the chamber positioned remotely from the vessel;
the generating step includes the step of heating a drying compound within the chamber to produce the drying vapor, and wherein step (d) includes passing the carrier gas through the chamber to cause it to carry the drying vapor into the vessel.
29. The method of , wherein the method further includes the step of reclaiming drying vapor from the vessel and condensing the reclaimed drying vapor to a liquid form.
claim 28
30. The method of wherein the drying vapor is formed from isopropyl alcohol.
claim 25
31. The method of wherein:
claim 25
step (a) further provides a lid for the vessel, the lid including at least one inlet;
the method further includes the step of sealing the vessel using the lid; and
in step (d) the carrier gas and drying vapor are passed into the vessel via the at least one inlet in the lid.
32. A method of treating and drying an object, comprising the steps of:
(a) providing a vessel having a moveable lid, the lid formed of a plurality of walls joined together to form a bottomless enclosure, and further providing an object having a surface;
(b) immersing the object in a process fluid in the vessel;
(c) sealing the vessel using the lid;
(d) heating at least a portion of the lid to a temperature above that of the process fluid;
(e) discharging the process fluid from the vessel, leaving residual process fluid on the surface of the object; and
(f) after the process fluid has been fully discharged from the vessel, introducing a drying vapor into the vessel, the drying vapor condensing on the surface of the object and reducing the surface tension of the residual process fluid, causing the residual process fluid to flow off of the surface.
33. The method of , wherein the process fluid is rinse fluid and wherein the method further comprises the steps of:
claim 32
prior to step (b) suspending the lid above the vessel, immersing the object in a chemical bath in the vessel, then discharging the chemical from the vessel after immersing the object, and then sealing the vessel using the lid.
34. The method of wherein the step of suspending the lid above the vessel creates a hood above the vessel for minimizing escape of fumes from the vessel into the surrounding atmosphere.
claim 33
35. The method of wherein the lid is provided to have at least one inlet, and wherein step (f) includes introducing the drying vapor into the vessel via the inlet in the lid.
claim 32
36. The method of , further including the step of introducing a purging gas into the vessel prior to introducing the drying vapor.
claim 32
37. The method of , further including the step of introducing a heated gas into the vessel after step (f) to volatilize condensed drying vapor from the surface of the object.
claim 31
38. An apparatus for treating and drying an object, the apparatus comprising:
a vessel, the vessel including
an open top portion and a lid moveable between a closed condition sealing the open top portion and an opened condition leaving the open top portion exposed,
a dump opening formed in a lower portion of the vessel and a dump door moveable between an opened condition permitting discharge of fluid through the dump opening and a closed condition sealing the dump opening, and
a fluid inlet formed in a lower portion of the vessel;
a source of rinse fluid fluidly coupled to the inlet by a fluid line;
a source of process chemical fluidly coupled to the fluid line;
a drying vapor generation chamber fluidly coupled to the vessel; and
a condenser fluidly coupled to the dump opening.
39. The apparatus of further comprising:
claim 38
control means for causing the vessel to be filled with rinse fluid from the source of rinse fluid, for opening the dump door after a predetermined period of time has lapsed following filling of the vessel with the rinse fluid, and for causing the vessel to be filled with drying vapor from the drying vapor generation chamber after the rinse fluid has been discharged from the vessel.
40. The apparatus of wherein:
claim 39
the lid includes a plurality of fluid manifolds formed therein and a plurality of vapor inlets fluidly coupled to the fluid manifolds; and
the drying vapor generation chamber is fluidly coupled to the fluid manifolds.
41. The apparatus of wherein:
claim 38
the drying generation chamber includes:
an enclosed chamber, a heated surface within the chamber for receiving a
liquid drying compound to create a drying vapor; and
the apparatus further comprises a carrier gas source fluidly coupled to the enclosed chamber.
42. The apparatus of wherein:
claim 41
the lid includes a plurality of fluid manifolds formed therein and a plurality of vapor inlets fluidly coupled to the fluid manifolds; and
the drying vapor generation chamber is fluidly coupled to the fluid manifolds.
43. The apparatus of wherein the source of chemical includes:
claim 38
a chemical storage tank fluidly coupled to a bulk chemical supply and proportioned to contain a first volume of chemical;
a dispense tank fluidly coupled to the chemical storage tank, the dispense tank proportioned to contain a second volume of chemical significantly smaller than the first volume of chemical;
a first valve between the chemical storage tank and the dispense tank;
a second valve between the dispense tank and the vessel; and
control means for opening the first valve for a predetermined period of time to dispense a predetermined quantity of chemical from the storage tank to the dispense tank, the predetermined quantity corresponding to an amount needed to carry out a process in the vessel, and further for opening the second valve to dispense the predetermined quantity from the dispense tank into the vessel.
44. The apparatus of further including a secondary fluid source fluidly coupled to the dispense tank, and a third valve positioned between the secondary fluid source and the dispense tank, the control means being further for controlling operation of the third valve to permit a secondary fluid to mix with the predetermined quantity of chemical to form a process solution.
claim 43
45. An apparatus for drying an object comprising:
a vessel having an opening;
a lid formed of a plurality of walls joined together to form a bottomless enclosure, the lid moveable between a first position sealing the opening in the vessel and a second position permitting access to the vessel via the opening;
a heating element coupled to the walls of the lid; and
a source of drying vapor fluidly coupled to the vessel.
46. The apparatus of , wherein the vessel includes an inlet, and wherein the apparatus further comprises a source of rinse fluid fluidly coupled to the inlet.
claim 45
47. The apparatus of , further comprising a source of process chemical fluidly coupled to the inlet.
claim 46
48. The apparatus of wherein the vessel further includes a dump opening formed in a lower portion of the vessel and a dump door moveable between an opened condition permitting discharge of fluid through the dump opening and a closed condition sealing the dump opening.
claim 46
49. The apparatus of wherein the lid includes a drying vapor inlet and wherein the source of drying vapor is fluidly coupled to the drying vapor inlet.
claim 46
50. The apparatus of wherein the source of drying vapor includes:
claim 46
an enclosed chamber having a heated surface for receiving a liquid drying compound, the chamber remote from but fluidly coupled to the vessel; and
a source of carrier gas fluidly coupled to the enclosed chamber.
Priority Applications (1)
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US09/905,025 US20010037822A1 (en) | 1998-10-09 | 2001-07-13 | Vapor drying system and method |
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US10380298P | 1998-10-09 | 1998-10-09 | |
US09/227,637 US6328809B1 (en) | 1998-10-09 | 1999-01-08 | Vapor drying system and method |
US09/905,025 US20010037822A1 (en) | 1998-10-09 | 2001-07-13 | Vapor drying system and method |
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US6638365B2 (en) * | 2001-10-09 | 2003-10-28 | Chartered Semiconductor Manufacturing Ltd. | Method for obtaining clean silicon surfaces for semiconductor manufacturing |
US20040099283A1 (en) * | 2002-11-26 | 2004-05-27 | Axcelis Technologies, Inc. | Drying process for low-k dielectric films |
US20060065286A1 (en) * | 2004-09-28 | 2006-03-30 | Niraj Rana | Method to address carbon incorporation in an interpoly oxide |
US20070095366A1 (en) * | 2005-11-02 | 2007-05-03 | Applied Materials, Inc. | Stripping and cleaning of organic-containing materials from electronic device substrate surfaces |
US20090117750A1 (en) * | 2007-10-30 | 2009-05-07 | Interuniversitair Microelektronica Centrum (Imec) | Methods of Forming a Semiconductor Device |
US7637029B2 (en) | 2005-07-08 | 2009-12-29 | Tokyo Electron Limited | Vapor drying method, apparatus and recording medium for use in the method |
US8056257B2 (en) * | 2006-11-21 | 2011-11-15 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
US20130081297A1 (en) * | 2011-09-29 | 2013-04-04 | Tokyo Electron Limited | Substrate processing apparatus |
US20140290090A1 (en) * | 2010-08-24 | 2014-10-02 | Jst Manufacturing, Inc. | System and method for drying substrates |
US9383136B2 (en) * | 2014-05-22 | 2016-07-05 | Boe Technology Group Co. Ltd. | Substrate dry device and method for drying substrate based on substrate dry device |
US20180076018A1 (en) * | 2016-09-12 | 2018-03-15 | SCREEN Holdings Co., Ltd. | Substrate processing method and substrate processing apparatus |
CN112838027A (en) * | 2019-11-25 | 2021-05-25 | 东京毅力科创株式会社 | Substrate cleaning apparatus and substrate cleaning method |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6392334B1 (en) * | 1998-10-13 | 2002-05-21 | Micron Technology, Inc. | Flat panel display including capacitor for alignment of baseplate and faceplate |
US6497055B2 (en) | 2000-01-04 | 2002-12-24 | Texas Instruments Incorporated | System and method for controlling a vapor dryer process |
KR100899609B1 (en) * | 2000-12-28 | 2009-05-27 | 도쿄엘렉트론가부시키가이샤 | Substrate processing apparatus and substrate processing method |
US20020119245A1 (en) * | 2001-02-23 | 2002-08-29 | Steven Verhaverbeke | Method for etching electronic components containing tantalum |
US6842998B2 (en) | 2001-04-06 | 2005-01-18 | Akrion Llc | Membrane dryer |
US20030011774A1 (en) * | 2001-06-05 | 2003-01-16 | Dibello Gerald N. | Methods and systems for monitoring process fluids |
KR20030006245A (en) * | 2001-07-12 | 2003-01-23 | 삼성전자 주식회사 | Wafer dry apparatus |
JP4678665B2 (en) * | 2001-11-15 | 2011-04-27 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
US20030136429A1 (en) * | 2002-01-22 | 2003-07-24 | Semitool, Inc. | Vapor cleaning and liquid rinsing process vessel |
US20040031167A1 (en) | 2002-06-13 | 2004-02-19 | Stein Nathan D. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
US20040000327A1 (en) * | 2002-06-26 | 2004-01-01 | Fabio Somboli | Apparatus and method for washing quartz parts, particularly for process equipment used in semiconductor industries |
CN1324647C (en) * | 2003-04-29 | 2007-07-04 | 力晶半导体股份有限公司 | A contamination sampling process inside carrier of semiconductor wafer |
TWI240952B (en) * | 2003-10-28 | 2005-10-01 | Samsung Electronics Co Ltd | System for rinsing and drying semiconductor substrates and method therefor |
KR100564582B1 (en) * | 2003-10-28 | 2006-03-29 | 삼성전자주식회사 | Electronic device substrate surface treating apparatus and surface treating method using the same |
US20060157095A1 (en) * | 2005-01-19 | 2006-07-20 | Pham Xuyen N | Systems and methods for spinning semiconductor wafers |
US8070884B2 (en) * | 2005-04-01 | 2011-12-06 | Fsi International, Inc. | Methods for rinsing microelectronic substrates utilizing cool rinse fluid within a gas enviroment including a drying enhancement substance |
JP2007017097A (en) * | 2005-07-08 | 2007-01-25 | Tokyo Electron Ltd | Method and device for vapor generation, vapor processing device, and storage medium for vapor generation |
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US11923210B2 (en) * | 2018-08-30 | 2024-03-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods for in-situ Marangoni cleaning |
US11515178B2 (en) | 2020-03-16 | 2022-11-29 | Tokyo Electron Limited | System and methods for wafer drying |
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Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6152153A (en) * | 1997-12-08 | 2000-11-28 | Kabushiki Kaisha Toshiba | Substrate cleaning/drying equipment and substrate cleaning/drying method |
Family Cites Families (91)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2959151A (en) | 1954-04-08 | 1960-11-08 | Ehrlich Joseph Charles | Apparatus for multiple liquid treatments of materials |
US2967120A (en) | 1956-11-07 | 1961-01-03 | John L Chaney | Method and apparatus for cleaning thermometers |
US2961354A (en) | 1958-10-28 | 1960-11-22 | Bell Telephone Labor Inc | Surface treatment of semiconductive devices |
GB1239573A (en) | 1968-02-09 | 1971-07-21 | ||
US3607549A (en) | 1968-10-09 | 1971-09-21 | Gen Dynamics Corp | Automatic chemical analyzer and controller |
GB1399867A (en) | 1971-09-27 | 1975-07-02 | Ici Ltd | Cleaning process |
US3871914A (en) | 1971-10-18 | 1975-03-18 | Chemcut Corp | Etchant rinse apparatus |
US3760822A (en) | 1972-03-22 | 1973-09-25 | A Evans | Machine for cleaning semiconductive wafers |
US3813311A (en) | 1973-01-24 | 1974-05-28 | Gen Motors Corp | Process for etching silicon wafers |
CH568101A5 (en) | 1973-09-11 | 1975-10-31 | Beaud Jean Louis | |
US3964957A (en) | 1973-12-19 | 1976-06-22 | Monsanto Company | Apparatus for processing semiconductor wafers |
DE2434305C2 (en) | 1974-07-17 | 1983-09-29 | Hans Höllmüller Maschinenbau GmbH & Co, 7033 Herrenberg | Etching machine |
US3977926A (en) | 1974-12-20 | 1976-08-31 | Western Electric Company, Inc. | Methods for treating articles |
US3937531A (en) | 1975-03-03 | 1976-02-10 | Hagen Magnus F | Telescoping drawer slide section for 2-member telescopic ball bearing slides affording full extension |
US4111715A (en) | 1976-03-15 | 1978-09-05 | Westinghouse Electric Corp. | Apparatus and method for chemically removing plastics |
US4039357A (en) | 1976-08-27 | 1977-08-02 | Bell Telephone Laboratories, Incorporated | Etching of III-V semiconductor materials with H2 S in the preparation of heterodiodes to facilitate the deposition of cadmium sulfide |
US4159917A (en) | 1977-05-27 | 1979-07-03 | Eastman Kodak Company | Method for use in the manufacture of semiconductor devices |
SE7801564L (en) | 1978-02-10 | 1979-08-11 | Lkb Produkter Ab | DEVICE FOR INSERTING BIOLOGICAL PRODUCTS |
US4282825A (en) | 1978-08-02 | 1981-08-11 | Hitachi, Ltd. | Surface treatment device |
US4235650A (en) | 1978-09-05 | 1980-11-25 | General Electric Company | Open tube aluminum diffusion |
US4328081A (en) | 1980-02-25 | 1982-05-04 | Micro-Plate, Inc. | Plasma desmearing apparatus and method |
US4318749A (en) | 1980-06-23 | 1982-03-09 | Rca Corporation | Wettable carrier in gas drying system for wafers |
US4479849A (en) | 1980-09-25 | 1984-10-30 | Koltron Corporation | Etchant removal apparatus and process |
US4368757A (en) | 1980-09-29 | 1983-01-18 | Sioux Steam Cleaner Corporation | Cleaning apparatus and method |
US4383884A (en) | 1981-06-01 | 1983-05-17 | Kelsey-Hayes Company | Closed loop leaching system |
US4408960A (en) | 1981-09-11 | 1983-10-11 | Logic Devices, Inc. | Pneumatic method and apparatus for circulating liquids |
JPS57210633A (en) | 1982-03-01 | 1982-12-24 | Nec Corp | Surface treating device for 3-5 family compound semiconductor |
US4426246A (en) | 1982-07-26 | 1984-01-17 | Bell Telephone Laboratories, Incorporated | Plasma pretreatment with BCl3 to remove passivation formed by fluorine-etch |
SE440719B (en) | 1983-06-17 | 1985-08-12 | Holmstrands Plaatindustri Ab | SET AND DEVICE FOR CLEANING CIRCUITS, WHICH PREVIOUSLY UNDERSTANDED A WELDING SOLAR OPERATION |
US4520834A (en) | 1983-11-08 | 1985-06-04 | Dicicco Paolo S | Apparatus for processing articles in a series of process solution containers |
US4519846A (en) | 1984-03-08 | 1985-05-28 | Seiichiro Aigo | Process for washing and drying a semiconductor element |
US4577650A (en) | 1984-05-21 | 1986-03-25 | Mcconnell Christopher F | Vessel and system for treating wafers with fluids |
US4778532A (en) | 1985-06-24 | 1988-10-18 | Cfm Technologies Limited Partnership | Process and apparatus for treating wafers with process fluids |
US4911761A (en) | 1984-05-21 | 1990-03-27 | Cfm Technologies Research Associates | Process and apparatus for drying surfaces |
US4633893A (en) | 1984-05-21 | 1987-01-06 | Cfm Technologies Limited Partnership | Apparatus for treating semiconductor wafers |
US4736758A (en) | 1985-04-15 | 1988-04-12 | Wacom Co., Ltd. | Vapor drying apparatus |
US4653636A (en) | 1985-05-14 | 1987-03-31 | Microglass, Inc. | Wafer carrier and method |
JPS62198126A (en) | 1986-02-26 | 1987-09-01 | Hitachi Tokyo Electron Co Ltd | Processor |
JP2511873B2 (en) | 1986-04-18 | 1996-07-03 | 株式会社日立製作所 | Vapor dryer |
JPS63111987A (en) | 1986-10-31 | 1988-05-17 | ソニツク・フエロ−株式会社 | Steam washing method and device |
DE3733670C1 (en) | 1987-10-05 | 1988-12-15 | Nukem Gmbh | Method and device for cleaning, in particular, disc-shaped oxidic substrates |
KR0134962B1 (en) | 1989-07-13 | 1998-04-22 | 나까다 구스오 | Disk washing apparatus |
US5115576A (en) | 1989-10-27 | 1992-05-26 | Semifab Incorporated | Vapor device and method for drying articles such as semiconductor wafers with substances such as isopropyl alcohol |
US5054210A (en) | 1990-02-23 | 1991-10-08 | S&K Products International, Inc. | Isopropyl alcohol vapor dryer system |
US5271774A (en) | 1990-03-01 | 1993-12-21 | U.S. Philips Corporation | Method for removing in a centrifuge a liquid from a surface of a substrate |
JPH04151835A (en) | 1990-05-25 | 1992-05-25 | Shimada Phys & Chem Ind Co Ltd | Washing drying method |
JP3133054B2 (en) | 1990-07-26 | 2001-02-05 | 大日本スクリーン製造株式会社 | Substrate cleaning processing method and cleaning processing apparatus |
JPH0531472A (en) | 1990-11-17 | 1993-02-09 | Tokyo Electron Ltd | Washing device |
US5089084A (en) | 1990-12-03 | 1992-02-18 | Micron Technology, Inc. | Hydrofluoric acid etcher and cascade rinser |
JPH04251930A (en) | 1990-12-29 | 1992-09-08 | Dainippon Screen Mfg Co Ltd | Method and apparatus for drying washed wafer |
US5143103A (en) | 1991-01-04 | 1992-09-01 | International Business Machines Corporation | Apparatus for cleaning and drying workpieces |
JP2901098B2 (en) | 1991-04-02 | 1999-06-02 | 東京エレクトロン株式会社 | Cleaning device and cleaning method |
JP3225441B2 (en) | 1991-04-23 | 2001-11-05 | 東京エレクトロン株式会社 | Processing equipment |
KR0155390B1 (en) | 1991-05-08 | 1998-12-01 | 이노우에 아키라 | Cleaning apparatus |
US5488964A (en) | 1991-05-08 | 1996-02-06 | Tokyo Electron Limited | Washing apparatus, and washing method |
JPH0513397A (en) | 1991-07-05 | 1993-01-22 | Toshiba Corp | Cleaning device |
JPH05212274A (en) | 1991-11-12 | 1993-08-24 | Submicron Syst Inc | Chemical processing system |
JPH05136116A (en) | 1991-11-13 | 1993-06-01 | Sony Corp | Semiconductor wafer washing device |
JP2639771B2 (en) | 1991-11-14 | 1997-08-13 | 大日本スクリーン製造株式会社 | Substrate cleaning / drying processing method and processing apparatus |
US5226242A (en) * | 1992-02-18 | 1993-07-13 | Santa Clara Plastics, Division Of Preco, Inc. | Vapor jet dryer apparatus and method |
JPH05283391A (en) | 1992-03-30 | 1993-10-29 | Dainippon Screen Mfg Co Ltd | Apparatus for cleaning wafer cleaner |
JP2915205B2 (en) | 1992-03-31 | 1999-07-05 | 大日本スクリーン製造株式会社 | Substrate surface treatment apparatus and substrate surface treatment method |
JPH05326464A (en) | 1992-05-15 | 1993-12-10 | Dainippon Screen Mfg Co Ltd | Method for vapor-phase washing of substrate surface |
KR940006241A (en) | 1992-06-05 | 1994-03-23 | 이노우에 아키라 | Substrate transfer device and transfer method |
JP2791251B2 (en) | 1992-07-30 | 1998-08-27 | 三菱電機株式会社 | Semiconductor processing apparatus and method, and semiconductor processing apparatus module |
JP3110218B2 (en) | 1992-09-25 | 2000-11-20 | 三菱電機株式会社 | Semiconductor cleaning apparatus and method, wafer cassette, dedicated glove, and wafer receiving jig |
JP2598360B2 (en) | 1992-11-26 | 1997-04-09 | 株式会社スガイ | Substrate cleaning equipment |
US5464480A (en) | 1993-07-16 | 1995-11-07 | Legacy Systems, Inc. | Process and apparatus for the treatment of semiconductor wafers in a fluid |
DE4413077C2 (en) * | 1994-04-15 | 1997-02-06 | Steag Micro Tech Gmbh | Method and device for chemical treatment of substrates |
US5826129A (en) | 1994-06-30 | 1998-10-20 | Tokyo Electron Limited | Substrate processing system |
US5542441A (en) | 1994-08-03 | 1996-08-06 | Yieldup International | Apparatus for delivering ultra-low particle counts in semiconductor manufacturing |
JPH0861846A (en) | 1994-08-22 | 1996-03-08 | Sony Corp | Method and apparatus for drying semiconductor wafer |
US5571337A (en) * | 1994-11-14 | 1996-11-05 | Yieldup International | Method for cleaning and drying a semiconductor wafer |
US5772784A (en) * | 1994-11-14 | 1998-06-30 | Yieldup International | Ultra-low particle semiconductor cleaner |
US5634978A (en) * | 1994-11-14 | 1997-06-03 | Yieldup International | Ultra-low particle semiconductor method |
US5849104A (en) * | 1996-09-19 | 1998-12-15 | Yieldup International | Method and apparatus for cleaning wafers using multiple tanks |
US5958146A (en) * | 1994-11-14 | 1999-09-28 | Yieldup International | Ultra-low particle semiconductor cleaner using heated fluids |
JPH08213446A (en) | 1994-12-08 | 1996-08-20 | Tokyo Electron Ltd | Processing equipment |
US5730162A (en) | 1995-01-12 | 1998-03-24 | Tokyo Electron Limited | Apparatus and method for washing substrates |
JP2832171B2 (en) | 1995-04-28 | 1998-12-02 | 信越半導体株式会社 | Apparatus and method for cleaning semiconductor substrate |
US5660642A (en) | 1995-05-26 | 1997-08-26 | The Regents Of The University Of California | Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor |
US5752532A (en) * | 1995-08-17 | 1998-05-19 | Schwenkler; Robert S. | Method for the precision cleaning and drying surfaces |
US5715612A (en) | 1995-08-17 | 1998-02-10 | Schwenkler; Robert S. | Method for precision drying surfaces |
TW310452B (en) | 1995-12-07 | 1997-07-11 | Tokyo Electron Co Ltd | |
JPH09162154A (en) | 1995-12-08 | 1997-06-20 | Dainippon Screen Mfg Co Ltd | Substrate treating system |
EP0784336A3 (en) | 1995-12-15 | 1998-05-13 | Texas Instruments Incorporated | Improvements in or relating to the fabrication and processing of semiconductor devices |
US6004399A (en) | 1996-07-01 | 1999-12-21 | Cypress Semiconductor Corporation | Ultra-low particle semiconductor cleaner for removal of particle contamination and residues from surface oxide formation on semiconductor wafers |
US5803980A (en) | 1996-10-04 | 1998-09-08 | Texas Instruments Incorporated | De-ionized water/ozone rinse post-hydrofluoric processing for the prevention of silicic acid residue |
JP3194036B2 (en) | 1997-09-17 | 2001-07-30 | 東京エレクトロン株式会社 | Drying treatment apparatus and drying treatment method |
US5807439A (en) | 1997-09-29 | 1998-09-15 | Siemens Aktiengesellschaft | Apparatus and method for improved washing and drying of semiconductor wafers |
US6045621A (en) | 1998-10-26 | 2000-04-04 | Scd Mountain View, Inc. | Method for cleaning objects using a fluid charge |
-
1999
- 1999-01-08 US US09/227,637 patent/US6328809B1/en not_active Expired - Lifetime
- 1999-09-28 KR KR1020017004440A patent/KR20010089292A/en not_active Application Discontinuation
- 1999-09-28 WO PCT/US1999/022483 patent/WO2000022654A1/en not_active Application Discontinuation
- 1999-09-28 DE DE19983631T patent/DE19983631T1/en not_active Withdrawn
- 1999-09-28 CN CNB998139017A patent/CN1179394C/en not_active Expired - Fee Related
- 1999-09-28 AU AU62715/99A patent/AU6271599A/en not_active Abandoned
- 1999-09-30 MY MYPI99004236A patent/MY126419A/en unknown
- 1999-12-28 TW TW088117387A patent/TW519564B/en not_active IP Right Cessation
-
2001
- 2001-07-13 US US09/905,025 patent/US20010037822A1/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6152153A (en) * | 1997-12-08 | 2000-11-28 | Kabushiki Kaisha Toshiba | Substrate cleaning/drying equipment and substrate cleaning/drying method |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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WO2003045540A1 (en) * | 2001-11-21 | 2003-06-05 | Scp Global Technologies | Apparatus and method for processing electronic component recursors |
US7156927B2 (en) | 2002-04-03 | 2007-01-02 | Fsi International, Inc. | Transition flow treatment process and apparatus |
US20030188765A1 (en) * | 2002-04-03 | 2003-10-09 | Christenson Kurt Karl | Transition flow treatment process and apparatus |
US20040099283A1 (en) * | 2002-11-26 | 2004-05-27 | Axcelis Technologies, Inc. | Drying process for low-k dielectric films |
US7806988B2 (en) | 2004-09-28 | 2010-10-05 | Micron Technology, Inc. | Method to address carbon incorporation in an interpoly oxide |
US20060260646A1 (en) * | 2004-09-28 | 2006-11-23 | Niraj Rana | Method to address carbon incorporation in an interpoly oxide |
US20060065286A1 (en) * | 2004-09-28 | 2006-03-30 | Niraj Rana | Method to address carbon incorporation in an interpoly oxide |
US7824505B2 (en) | 2004-09-28 | 2010-11-02 | Micron Technology, Inc. | Method to address carbon incorporation in an interpoly oxide |
US7637029B2 (en) | 2005-07-08 | 2009-12-29 | Tokyo Electron Limited | Vapor drying method, apparatus and recording medium for use in the method |
US20070095366A1 (en) * | 2005-11-02 | 2007-05-03 | Applied Materials, Inc. | Stripping and cleaning of organic-containing materials from electronic device substrate surfaces |
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Also Published As
Publication number | Publication date |
---|---|
US6328809B1 (en) | 2001-12-11 |
TW519564B (en) | 2003-02-01 |
WO2000022654A1 (en) | 2000-04-20 |
KR20010089292A (en) | 2001-09-29 |
DE19983631T1 (en) | 2003-03-27 |
CN1179394C (en) | 2004-12-08 |
CN1329748A (en) | 2002-01-02 |
MY126419A (en) | 2006-09-29 |
AU6271599A (en) | 2000-05-01 |
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Owner name: BHC INTERIM FUNDING II, L.P., NEW YORK Free format text: SECURITY AGREEMENT;ASSIGNOR:AKRION SCP ACQUISITION CORP.;REEL/FRAME:020279/0925 Effective date: 20061002 |