US20020001932A1 - Method for forming a gate for semiconductor devices - Google Patents
Method for forming a gate for semiconductor devices Download PDFInfo
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- US20020001932A1 US20020001932A1 US09/895,268 US89526801A US2002001932A1 US 20020001932 A1 US20020001932 A1 US 20020001932A1 US 89526801 A US89526801 A US 89526801A US 2002001932 A1 US2002001932 A1 US 2002001932A1
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- Prior art keywords
- film
- forming
- tao
- annealing process
- amorphous
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- 238000000034 method Methods 0.000 title claims abstract description 77
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 34
- 238000000137 annealing Methods 0.000 claims abstract description 31
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 22
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 22
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 22
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 22
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 20
- 230000004888 barrier function Effects 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims abstract description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 8
- 229920005591 polysilicon Polymers 0.000 claims abstract description 8
- 238000011066 ex-situ storage Methods 0.000 claims abstract description 7
- 229910003070 TaOx Inorganic materials 0.000 claims description 52
- 239000007789 gas Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 229910008479 TiSi2 Inorganic materials 0.000 claims description 3
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 7
- 238000002955 isolation Methods 0.000 abstract description 5
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910003071 TaON Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Definitions
- the present invention relates to a method for forming a gate for semiconductor devices, and in particular to an improved method for forming a gate for semiconductor devices by using a TaO x N y film as a gate oxide film.
- a gate oxide film of a device having line widths of 0.1 ⁇ m or less has an effective oxide thickness of below about 40 ⁇ in order to reduce in short channel effects and to provide efficient control of channels.
- a thin gate oxide film increases the leakage current due to a direct tunneling, which causes deterioration in the transistor properties and a refresh time relating to the resultant capacitor.
- a Ta 2 O 5 film which is a metal oxide film having a high dielectric constant, is used as the gate oxide film of the transistor, rather than the conventional SiO 2 film.
- FIG. 1A illustrates a conventional method for forming a gate for semiconductor devices. As shown in FIG. 1A, a SiO 2 or SiON film 2 is formed on a semiconductor substrate where a device isolation film (not shown) has been formed.
- a Ta 2 O 5 film 3 having a high dielectric constant is formed on the SiO 2 or SiON film 2 by a chemical vapor deposition (CVD).
- the Ta 2 O 5 film 3 is a metal oxide film having a high dielectric constant.
- the Ta 2 O 5 film 3 is formed by using Ta(C 2 H 5 O) 5 as a raw material and O 2 or N 2 O as a reaction gas.
- a TiN film or WN film 4 is deposited on the Ta 2 O 5 film 3 to form a metal barrier, and a conductive polysilicon film or metal film 5 is deposited thereon as the gate electrode material.
- phosphorus is used in a channel ion implantation process, instead of boron.
- a buried channel is formed in an NMOS transistor, not a surface channel.
- containments comprising carbon atoms, carbon compounds and H 2 O exist in the Ta 2 O 5 film formed by the reaction of Ta(C 2 H 5 O) 5 and O 2 or N 2 O, which increases the leakage current of the gate and degrades the dielectric properties.
- the conventional method requires an additional oxidation process for stabilizing the unstable stoichiometry by oxidizing vacancy Ta atoms in the Ta 2 O 5 film, and also typically requires two or three high and/or low temperature annealing processes after the deposition.
- an object of the present invention is to provide a method for forming a gate for semiconductor devices which can prevent a leakage current by using a TaON film having a stable stoichiometry as a gate oxide film.
- a method for forming a gate for semiconductor devices including the steps of: providing a semiconductor substrate where a device isolation film has been formed; depositing an SiO 2 or SiON film on the semiconductor substrate; depositing an amorphous TaO x N y film on the SiO 2 or SiON film; performing a low temperature annealing process to improve quality of the amorphous TaO x N y film; performing a high temperature annealing process in ex-situ to remove organic substances and nitrogen in the amorphous TaO x N y film, and crystallize the amorphous TaO x N y film; and depositing a metal barrier film on the crystallized TaO x N y film, and depositing a polysilicon film or metal film for a gate electrode on the metal barrier film.
- a method for forming a gate for semiconductor devices including the steps of: providing a semiconductor substrate where a device isolation film has been formed; growing an SiO 2 or SiON film on the semiconductor substrate; forming an amorphous TaO x N y film on the SiO 2 or SiON film; performing a low temperature annealing process on the amorphous TaO x N y film by using plasma or UV; removing oxygen vacancies and organic substances in the amorphous TaO x N y film; crystallizing the amorphous TaO x N y film by performing a high temperature annealing process, such as a rapid thermal process (RTP); and forming a metal barrier film on the crystallized TaO x N y film, and forming a polysilicon film or metal film for a gate electrode on the metal barrier film.
- a high temperature annealing process such as a rapid thermal process (RTP)
- RTP rapid thermal process
- FIG. 1A illustrates a conventional method for forming a gate for semiconductor devices
- FIG. 1B shows the threshold voltage due to a work function of the metal gate formed according to a conventional method
- FIGS. 2A through 2C illustrate sequential steps of a method for forming a gate for semiconductor devices in accordance with the present invention
- FIG. 2D illustrates a surface analysis before and after annealing a TaO x N y film for a gate oxide film
- FIG. 2E illustrates the method for forming the gate for semiconductor devices in accordance with the present invention.
- FIGS. 3A through 3C illustrate comparisons between Ta 2 O 5 and TaO x N y films.
- FIG. 2A there is provided a semiconductor substrate 10 where a device isolation film (not shown) has been formed.
- an RTP rapid thermal process
- a SiO 2 or SiON film is deposited with a thickness of 15 ⁇ .
- the SiON film restricts oxidation of the semiconductor substrate 10 in a subsequent annealing process of an O 2 atmosphere.
- an amorphous TaO x N y film 30 is formed on the SiO 2 or SiON film.
- the amorphous TaO x N y film 30 is deposited at a temperature between about 300° C. and 500° C. according to an MOCVD (metal organic chemical vapor deposition) using Ta(C 2 H 5 O) 5 and NH 3 .
- MOCVD metal organic chemical vapor deposition
- the amorphous TaO x N y film 30 is deposited with a thickness of about 20 to 500 ⁇ .
- a low temperature annealing process is performed at a temperature between about 300° C. and 500° C. by applying about 100 W power, supplying a N 2 O gas in a chamber to form a plasma.
- the low temperature annealing process is performed at about 300° C. and 500° C. for about 10 to 30 minutes, by using UV and exciting O 2 or O 3 .
- the amorphous TaO x N y film is deposited at a thickness of about 20 to 150 ⁇ on the amorphous TaO x N y film where the low temperature annealing process has been carried out.
- an annealing process is performed by exciting a N 2 O gas in a chamber, using plasma or exciting O 2 or O 3 using UV, thereby removing the oxygen vacancies and organic substances in the TaO x N y film.
- a high temperature annealing process is performed on the amorphous TaO x N y film ex-situ to remove the organic substances and nitrogen, thereby forming a crystallized TaO x N y film 30 a .
- the high temperature annealing process is performed ex-situ at about 700° C. and 1000° C. for about 60 seconds in an atmosphere of N 2 O or O 2 by the rapid thermal process (RTP), or in a furnace in an oxidizing atmosphere.
- RTP rapid thermal process
- FIG. 2D shows an Auger electron spectroscopy data.
- nitrogen exists in the TaO x N y films.
- FIG. 2D(b) a small amount of nitrogen exists in the Si/SiO 2 film interface, after performing the low temperature annealing process for improving the TaO x N y film.
- a metal barrier film 40 is formed on the crystallized TaO x N y film 30 a .
- the metal barrier film 40 consists of a TiN or WN film.
- a polysilicon film or metal film 50 for a gate electrode is formed on the metal barrier film 40 .
- the metal film for the gate electrode consists of a TiSi 2 , WSi x or W film.
- the gate is formed according in a known manner, followed by a process for forming the transistor.
- FIG. 3A shows C-V plot between a general Ta 2 O 5 film and the TaO x N y film.
- the TaO x N y film moves in a flat band voltage (V fb ) more than the Ta 2 O 5 film by 0.17V in a negative direction.
- V fb flat band voltage
- Such a variation of the V fb results from positive charges by nitrogen.
- a threshold voltage can be reduced by 0.17V.
- FIGS. 3B and 3C illustrate an effective oxide thickness (T eff ) and a breakdown voltage (BV) in a 64M cell region before and after performing a selective oxidation process on the whole region, except for the metal gate to prevent a damage in the transistor formation process.
- the effective oxide thickness of the TaO x N y film is increased less than the Ta 2 O 5 film.
- the TaO x N y film does not vary remarkably before/after the selective oxidation process. Accordingly, when the TaO x N y film is used as the gate oxide film, a margin of the subsequent process is increased.
- the present invention employs the TaO x N y film as the gate oxide film, thereby easily adjusting the threshold voltage, increasing resistance to the subsequent annealing process and oxidation, improving reliability of an insulation film as well as increasing a margin in the subsequent process.
- the TaO x N y film has a higher dielectric constant than the SiO 2 film, and a more stabilized chemical composition structure than the Ta 2 O 5 film. Therefore, the TaO x N y film has little oxidation reactivity with the gate electrode.
- the TaO x N y film consists of a stabilized Ta—O—N structure. As a result, the TaO x N y film is resistant to an external electric impact and prevents the leakage current.
Abstract
Description
- 1. Field of the Invention
- The present invention relates to a method for forming a gate for semiconductor devices, and in particular to an improved method for forming a gate for semiconductor devices by using a TaOxNy film as a gate oxide film.
- 2. Description of the Background Art
- In general, in highly integrated semiconductor devices, a gate oxide film of a device having line widths of 0.1 μm or less has an effective oxide thickness of below about 40 Å in order to reduce in short channel effects and to provide efficient control of channels. However, such a thin gate oxide film increases the leakage current due to a direct tunneling, which causes deterioration in the transistor properties and a refresh time relating to the resultant capacitor.
- Accordingly, in a conventional art, a Ta2O5 film, which is a metal oxide film having a high dielectric constant, is used as the gate oxide film of the transistor, rather than the conventional SiO2 film.
- FIG. 1A illustrates a conventional method for forming a gate for semiconductor devices. As shown in FIG. 1A, a SiO2 or
SiON film 2 is formed on a semiconductor substrate where a device isolation film (not shown) has been formed. - A Ta2O5
film 3 having a high dielectric constant is formed on the SiO2 or SiONfilm 2 by a chemical vapor deposition (CVD). Here, the Ta2O5film 3 is a metal oxide film having a high dielectric constant. The Ta2O5film 3 is formed by using Ta(C2H5O)5 as a raw material and O2 or N2O as a reaction gas. - Thereafter, a TiN film or WN film4 is deposited on the Ta2O5
film 3 to form a metal barrier, and a conductive polysilicon film ormetal film 5 is deposited thereon as the gate electrode material. - Although not illustrated, a subsequent process for forming the transistor is performed according to a known method.
- However, when the metal gate electrode is employed on the Ta2O5 film, as shown in FIG. 1B, a threshold voltage is over +1V due to a work function of the metal gate.
- In order to reduce the threshold voltage, phosphorus is used in a channel ion implantation process, instead of boron. When phosphorus is ion-implanted, a buried channel is formed in an NMOS transistor, not a surface channel.
- In addition, containments comprising carbon atoms, carbon compounds and H2O exist in the Ta2O5 film formed by the reaction of Ta(C2H5O)5 and O2 or N2O, which increases the leakage current of the gate and degrades the dielectric properties.
- Therefore, in order to prevent an increased leakage current level and degraded the dielectric properties, the conventional method requires an additional oxidation process for stabilizing the unstable stoichiometry by oxidizing vacancy Ta atoms in the Ta2O5 film, and also typically requires two or three high and/or low temperature annealing processes after the deposition.
- Accordingly, an object of the present invention is to provide a method for forming a gate for semiconductor devices which can prevent a leakage current by using a TaON film having a stable stoichiometry as a gate oxide film.
- In order to achieve the above-described object of the present invention, there is provided a method for forming a gate for semiconductor devices, including the steps of: providing a semiconductor substrate where a device isolation film has been formed; depositing an SiO2 or SiON film on the semiconductor substrate; depositing an amorphous TaOxNy film on the SiO2 or SiON film; performing a low temperature annealing process to improve quality of the amorphous TaOxNy film; performing a high temperature annealing process in ex-situ to remove organic substances and nitrogen in the amorphous TaOxNy film, and crystallize the amorphous TaOxNy film; and depositing a metal barrier film on the crystallized TaOxNy film, and depositing a polysilicon film or metal film for a gate electrode on the metal barrier film.
- In addition, there is provided a method for forming a gate for semiconductor devices, including the steps of: providing a semiconductor substrate where a device isolation film has been formed; growing an SiO2 or SiON film on the semiconductor substrate; forming an amorphous TaOxNy film on the SiO2 or SiON film; performing a low temperature annealing process on the amorphous TaOxNy film by using plasma or UV; removing oxygen vacancies and organic substances in the amorphous TaOxNy film; crystallizing the amorphous TaOxNy film by performing a high temperature annealing process, such as a rapid thermal process (RTP); and forming a metal barrier film on the crystallized TaOxNy film, and forming a polysilicon film or metal film for a gate electrode on the metal barrier film.
- The present invention will become better understood with reference to the accompanying drawings which are given only by way of illustration and thus are not limitative of the present invention, wherein:
- FIG. 1A illustrates a conventional method for forming a gate for semiconductor devices;
- FIG. 1B shows the threshold voltage due to a work function of the metal gate formed according to a conventional method;
- FIGS. 2A through 2C illustrate sequential steps of a method for forming a gate for semiconductor devices in accordance with the present invention;
- FIG. 2D illustrates a surface analysis before and after annealing a TaOxNy film for a gate oxide film;
- FIG. 2E illustrates the method for forming the gate for semiconductor devices in accordance with the present invention; and
- FIGS. 3A through 3C illustrate comparisons between Ta2O5 and TaOxNy films.
- A method for forming a gate for semiconductor devices in accordance with the present invention will now be described with reference to the accompanying drawings.
- As illustrated in FIG. 2A, there is provided a
semiconductor substrate 10 where a device isolation film (not shown) has been formed. - In order to improve an interface property, an RTP (rapid thermal process) is performed at a temperature between about 700° C. and 1100° C. in an atmosphere of O2 or N2O gas. Preferably, a SiO2 or SiON film is deposited with a thickness of 15 Å. Especially, the SiON film restricts oxidation of the
semiconductor substrate 10 in a subsequent annealing process of an O2 atmosphere. - As shown in FIG. 2b, an amorphous TaOxNy film 30 is formed on the SiO2 or SiON film. Here, the amorphous TaOxNy film 30 is deposited at a temperature between about 300° C. and 500° C. according to an MOCVD (metal organic chemical vapor deposition) using Ta(C2H5O)5 and NH3. Preferably, the amorphous TaOxNy film 30 is deposited with a thickness of about 20 to 500 Å.
- As depicted in FIG. 2C, in order to supply oxygen to oxygen vacancies in the TaOxNy film and remove organic substances and nitrogen, a low temperature annealing process is performed at a temperature between about 300° C. and 500° C. by applying about 100 W power, supplying a N2O gas in a chamber to form a plasma.
- In addition, the low temperature annealing process is performed at about 300° C. and 500° C. for about 10 to 30 minutes, by using UV and exciting O2 or O3. Moreover, the amorphous TaOxNy film is deposited at a thickness of about 20 to 150 Å on the amorphous TaOxNy film where the low temperature annealing process has been carried out. Thereafter, an annealing process is performed by exciting a N2O gas in a chamber, using plasma or exciting O2 or O3 using UV, thereby removing the oxygen vacancies and organic substances in the TaOxNy film.
- A high temperature annealing process is performed on the amorphous TaOxNy film ex-situ to remove the organic substances and nitrogen, thereby forming a crystallized TaOxNy film 30 a. At this time, the high temperature annealing process is performed ex-situ at about 700° C. and 1000° C. for about 60 seconds in an atmosphere of N2O or O2 by the rapid thermal process (RTP), or in a furnace in an oxidizing atmosphere.
- FIG. 2D shows an Auger electron spectroscopy data. As shown in FIG. 2D(a), nitrogen exists in the TaOxNy films. As depicted in FIG. 2D(b), a small amount of nitrogen exists in the Si/SiO2 film interface, after performing the low temperature annealing process for improving the TaOxNy film.
- As illustrated in FIG. 2E, a
metal barrier film 40 is formed on the crystallized TaOxNy film 30 a. Preferably, themetal barrier film 40 consists of a TiN or WN film. - Thereafter, a polysilicon film or
metal film 50 for a gate electrode is formed on themetal barrier film 40. Preferably, the metal film for the gate electrode consists of a TiSi2, WSix or W film. - Although not illustrated, the gate is formed according in a known manner, followed by a process for forming the transistor.
- FIG. 3A shows C-V plot between a general Ta2O5 film and the TaOxNy film. As shown in FIG. 3A, the TaOxNy film moves in a flat band voltage (Vfb) more than the Ta2O5 film by 0.17V in a negative direction. Such a variation of the Vfb results from positive charges by nitrogen. As a result, when the transistor is formed, a threshold voltage can be reduced by 0.17V.
- FIGS. 3B and 3C illustrate an effective oxide thickness (Teff) and a breakdown voltage (BV) in a 64M cell region before and after performing a selective oxidation process on the whole region, except for the metal gate to prevent a damage in the transistor formation process.
- As shown in FIGS. 3B and 3C, the effective oxide thickness of the TaOxNy film is increased less than the Ta2O5 film. In addition, in the respect of the breakdown voltage, the TaOxNy film does not vary remarkably before/after the selective oxidation process. Accordingly, when the TaOxNy film is used as the gate oxide film, a margin of the subsequent process is increased.
- As discussed earlier, the present invention employs the TaOxNy film as the gate oxide film, thereby easily adjusting the threshold voltage, increasing resistance to the subsequent annealing process and oxidation, improving reliability of an insulation film as well as increasing a margin in the subsequent process.
- Moreover, the TaOxNy film has a higher dielectric constant than the SiO2 film, and a more stabilized chemical composition structure than the Ta2O5 film. Therefore, the TaOxNy film has little oxidation reactivity with the gate electrode. In addition, the TaOxNy film consists of a stabilized Ta—O—N structure. As a result, the TaOxNy film is resistant to an external electric impact and prevents the leakage current.
- As the present invention may be embodied in several forms without departing from the spirit or essential characteristics thereof, it should also be understood that the above-described embodiment is not limited by any of the details of the foregoing description, unless otherwise specified, but rather should be construed broadly within its spirit and scope as defined in the appended claims, and therefore all changes and modifications that fall within the meets and bounds of the claims, or equivalences of such meets and bounds are therefore intended to be embraced by the appended claims.
Claims (20)
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KR1020000037137A KR100333375B1 (en) | 2000-06-30 | 2000-06-30 | Method for manufacturing gate in semiconductor device |
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US20190280098A1 (en) * | 2016-11-30 | 2019-09-12 | Naoyuki Ueda | Coating liquid for forming oxide or oxynitride insulator film, oxide or oxynitride insulator film, field-effect transistor, and method for producing the same |
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US7303996B2 (en) * | 2003-10-01 | 2007-12-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | High-K gate dielectric stack plasma treatment to adjust threshold voltage characteristics |
US7836276B2 (en) * | 2005-12-02 | 2010-11-16 | Nvidia Corporation | System and method for processing thread groups in a SIMD architecture |
US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
US7645710B2 (en) | 2006-03-09 | 2010-01-12 | Applied Materials, Inc. | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
US7678710B2 (en) | 2006-03-09 | 2010-03-16 | Applied Materials, Inc. | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
US7837838B2 (en) | 2006-03-09 | 2010-11-23 | Applied Materials, Inc. | Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus |
US7902018B2 (en) | 2006-09-26 | 2011-03-08 | Applied Materials, Inc. | Fluorine plasma treatment of high-k gate stack for defect passivation |
JP4420032B2 (en) * | 2007-01-31 | 2010-02-24 | ソニー株式会社 | Method for manufacturing thin film semiconductor device |
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US6171900B1 (en) * | 1999-04-15 | 2001-01-09 | Taiwan Semiconductor Manufacturing Company | CVD Ta2O5/oxynitride stacked gate insulator with TiN gate electrode for sub-quarter micron MOSFET |
KR100386447B1 (en) * | 1999-12-23 | 2003-06-02 | 주식회사 하이닉스반도체 | Method of forming capacitor in semiconductor device |
KR100313091B1 (en) * | 1999-12-29 | 2001-11-07 | 박종섭 | Method of forming gate dielectric layer with TaON |
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US20190280098A1 (en) * | 2016-11-30 | 2019-09-12 | Naoyuki Ueda | Coating liquid for forming oxide or oxynitride insulator film, oxide or oxynitride insulator film, field-effect transistor, and method for producing the same |
US11049951B2 (en) * | 2016-11-30 | 2021-06-29 | Ricoh Company, Ltd. | Coating liquid for forming oxide or oxynitride insulator film, oxide or oxynitride insulator film, field-effect transistor, and method for producing the same |
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