US20020038688A1 - Plasma processing apparatus and system, performance validation system and inspection method therefor - Google Patents
Plasma processing apparatus and system, performance validation system and inspection method therefor Download PDFInfo
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- US20020038688A1 US20020038688A1 US09/925,579 US92557901A US2002038688A1 US 20020038688 A1 US20020038688 A1 US 20020038688A1 US 92557901 A US92557901 A US 92557901A US 2002038688 A1 US2002038688 A1 US 2002038688A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- General Chemical & Material Sciences (AREA)
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Abstract
A plasma processing apparatus including a plasma processing chamber having a plasma excitation electrode for exciting a plasma, a radiofrequency generator for supplying a radiofrequency voltage to the electrode, a radiofrequency feeder connected to the electrode, and a matching circuit having an input terminal and an output end. The input terminal is connected to the radiofrequency generator and the output end is connected to an end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator. A frequency which is three times a first series resonant frequency f0 of the plasma processing chamber, which is measured at the end of the radiofrequency feeder, is larger than a power frequency fe of the radiofrequency waves.
Description
- 1. Field of the Invention
- The present invention relates to a plasma processing apparatus, and a performance validation system of the plasma processing apparatus, which use radiofrequency voltage to improve the power consumption efficiency and the coating characteristics.
- 2. Description of the Related Art FIG. 18 illustrates an example of a conventional dual-frequency excitation plasma processing apparatus which performs a plasma process such as chemical vapor deposition (CVD), sputtering, dry etching, ashing, or the like.
- In the plasma processing apparatus shown in FIG. 18, a
matching circuit 2A is inserted between aradiofrequency generator 1 and aplasma excitation electrode 4. Thematching circuit 2A serves as a circuit that matches the impedance between theradiofrequency generator 1 and theexcitation electrode 4. - Radiofrequency voltage from the
radiofrequency generator 1 is fed to theplasma excitation electrode 4 via thematching circuit 2A and afeed plate 3. Thematching circuit 2A is accommodated in amatching box 2, which is a housing composed of a conductive material. Theplasma excitation electrode 4 and thefeed plate 3 are covered by achassis 21 made of a conductor. - The
plasma excitation electrode 4 is provided with aprojection 4 a at the lower side thereof. Ashower plate 5 having a number ofholes 7 is provided under theplasma excitation electrode 4, and is in contact with theprojection 4 a. Theplasma excitation electrode 4 and theshower plate 5 define aspace 6. Agas feeding tube 17 comprising a conductor is connected to thespace 6. Thegas feeding tube 17 is provided with aninsulator 17 a at the middle thereof so as to insulate theplasma excitation electrode 4 from the gas source. - Gas flowing from the
gas feeding tube 17 is fed inside achamber space 60, composed of achamber wall 10, via theholes 7 in theshower plate 5. Aninsulator 9 is disposed between thechamber wall 10 and the plasma excitation electrode 4 (cathode) to provide insulation therebetween. The exhaust system is omitted from the drawing. - A wafer susceptor (susceptor electrode)8, which receives a
substrate 16 and also serves as a plasma excitation electrode, is installed inside thechamber space 60. Asusceptor shield 12 is disposed under thewafer susceptor 8. - The
susceptor shield 12 comprises ashield supporting plate 12A for receiving thesusceptor electrode 8 and a cylindrical supportingtube 12B extending downward from the center of theshield supporting plate 12A. The supportingtube 12B penetrates achamber bottom 10A, and the lower portion of the supportingtube 12B and thechamber bottom 10A are hermetically sealed withbellows 11. - The
shaft 13 and thesusceptor electrode 8 are electrically isolated from thesusceptor shield 12 by a gap between thesusceptor shield 12 and thesusceptor electrode 8 and byinsulators 12C provided around theshaft 13. Theinsulators 12C also serve to maintain a high vacuum in thechamber space 60. Thesusceptor electrode 8 and thesusceptor shield 12 can be moved upward and downward by thebellows 11 in order to control the distance betweenplasma excitation electrodes - The
susceptor electrode 8 is connected to asecond radiofrequency generator 15 via theshaft 13 and a matching circuit accommodated in a matchingbox 14. Thechamber wall 10 and thesusceptor shield 12 have equal DC potentials. - FIG. 19 illustrates another example of a conventional plasma processing apparatus. Unlike the plasma processing apparatus shown in FIG. 18, the plasma processing apparatus shown in FIG. 19 is of a single-frequency excitation type. In other words, a radiofrequency voltage is supplied only to the
cathode electrode 4. Thesusceptor electrode 8 is grounded. Moreover, thematching box 14 and theradiofrequency generator 15 shown in FIG. 18 are not provided in the apparatus shown in FIG. 19. Thesusceptor electrode 8 and thechamber wall 10 have equal DC potentials. - In these conventional plasma processing apparatuses, a voltage with a frequency of approximately 13.56 MHz is generally supplied in order to generate a plasma between the
electrodes - However, in the above-described plasma processing apparatuses, the power consumption efficiency, i.e., the ratio of the power fed into the
plasma excitation electrode 4 from theradiofrequency generator 1 to the power consumed in the plasma, is not necessarily satisfactory. Moreover, as the frequency of the voltage fed from the radiofrequency generator is increased, the decrease in the consumption efficiency of the plasma processing apparatus becomes more significant. The consumption efficiency is also decreased when the size of the substrate is increased. - As a consequence of this low power consumption efficiency, the density of the generated plasma cannot be increased and the rate of deposition remains low. Moreover, and by way of example, in the case of depositing insulating layers, it is difficult to deposit a layer having a high isolation voltage.
- The operation validation and the evaluation of the above-described plasma processing apparatuses have been conducted by actually performing a process such as deposition and then evaluating the deposition characteristics thereof as follows.
- (1) Deposition rates and planar uniformity
- The process of determining and evaluating deposition rates and planar uniformity includes the following:
- Step 1: Depositing a desired layer on a substrate by a plasma-enhanced CVD process;
- Step 2: Patterning a resist layer;
- Step 3: Dry-etching the layer;
- Step 4: Separating the resist layer by ashing;
- Step 5: Measuring step differences in the layer thickness using a displacement meter;
- Step 6: Calculating deposition rates from the deposition time and the layer thickness; and
- Step 7: Measuring the planar uniformity at 16 points on a 6-inch substrate surface.
- (2) BHF etching rate
- The process of determining etching rates includes the following:
- A resist mask is patterned as in
Steps - Step 3: Immersing the substrate in a BHF solution for one minute;
- Step 4: Rinsing the substrate with deionized water, drying the substrate, and separating the resist mask using a mixture of sulfuric acid and hydrogen peroxide (H2SO4+H2O2);
- Step 5: Measuring the step difference as in
Step 5 above; and - Step 6: Calculating the etching rate from the immersion time and the step differences.
- (3) Isolation voltage
- The process of determining and evaluating the isolation voltage includes the following:
- Step 1: Depositing a conductive layer on a glass substrate by a sputtering method and patterning the conductive layer to form a lower electrode;
- Step 2: Depositing an insulation layer by a plasma-enhanced CVD method;
- Step 3: Forming an upper electrode as in
Step 1; - Step 4: Forming a contact hole for the lower electrode;
- Step 5: Measuring the current-voltage characteristics (I-V characteristics) of the upper and lower electrodes by using probes while applying a voltage of approximately 200 V or less; and
- Step 6: defining the isolation voltage as the voltage V at 100 pA corresponding 1 μA/cm2 in a 100 μm square electrode.
- A plasma processing apparatus has been required that can achieve a higher plasma processing rate (the deposition rate or the processing speed), increased productivity, and uniformity of the plasma processing in the planar direction of the substrates to be treated (uniformity in the distribution of the layer thickness in the planar direction and uniformity in the distribution of the process variation in the planar direction).
- However, the size of substrates has increased in recent years, the requirement for uniformity in the planar direction is becoming more difficult to achieve. Moreover, as the size of the substrate has increased, the power delivered has also increased to the order of kilowatts, thus increasing power consumption. Accordingly, as the capacity of the power supply increases, both the cost for developing the power supply and the power consumption during the operation of the apparatus are increased. In this respect, it is desirable to reduce the operation costs.
- Furthermore, an increase in power consumption leads to an increase in emission of carbon dioxide, which places a burden on the environment. Since the power consumption is increased by the combination of an increase in the size of substrates and low power consumption efficiency, there is a growing demand to reduce the carbon dioxide emission.
- The density of the plasma generated can be improved by increasing the plasma excitation frequency. For example, a frequency in the VHF band of 30 MHz or more can be used instead of the conventional 13.56 MHz. Thus, one possible way to improve the deposition rate of a deposition apparatus such as a plasma-enhanced CVD apparatus is to employ a higher plasma excitation frequency.
- Another type of plasma processing apparatus is one having a plurality of plasma chambers. Such a plasma processing apparatus is also required to achieve a higher plasma processing rate (the deposition rate or the processing speed), increased productivity, and uniformity of the plasma processing in the planar direction of the substrates (uniformity in the distribution of the layer thickness in the planar direction and uniformity in the distribution of the process variation in the planar direction), even when the substrates are treated in different plasma chambers. There is also a demand to eliminate operational differences among the plurality of the plasma chambers, thus avoiding processing variations.
- Moreover, it is required that the respective plasma chambers of the plasma processing apparatus having plural plasma chambers achieve substantially the same plasma processing results by using the same process recipe specifying external parameters such as the flow/pressure of the gas supplied, power supply, and treatment time.
- At the time of initial installation or maintenance of the plasma processing apparatus, there is a demand to reduce the amount of time required for adjusting the apparatus to eliminate differences among the plural plasma chambers and processing variations, thereby achieving substantially the same process results using the same process recipe. A reduction of the cost required for such an adjustment is also required.
- Furthermore, it is also required that a plasma processing system equipped with a plurality of the above-described plasma processing apparatuses eliminate plasma processing variations among individual plasma chambers of the individual plasma processing apparatuses.
- The conventional plasma processing apparatus described above is, however, designed to use a power having a frequency of approximately 13.56 MHz and is not suited for higher frequencies. To be more specific, the units to which the radiofrequency voltage is delivered, i.e., the chambers in which plasma processing is carried out, are designed without taking into an account radiofrequency characteristics such as impedance and resonance frequency characteristics, and thus have the following problems.
- First, when a power having a frequency exceeding 13.56 MHz is delivered, no improvement is achieved in the deposition rate during the deposition process. Moreover, the deposition rate may even be decreased in some cases.
- Second, although the density of a generated plasma increases as the frequency increases, the density starts to decrease once its peak value is reached, eventually reaching a level at which glow-discharge is no longer possible, thus rendering further increases in frequency useless.
- In order to carry out the performance validation and performance diagnosis of this plasma processing apparatus employing processes (1) to (3) described above, the apparatus must actually be operated so as to confirm the validity of the operations. Furthermore, the treated substrates are required to undergo ex-situ inspection comprising a plurality of steps.
- Since such an inspection requires several days to several weeks to yield evaluation results, it is desired that the time required for performance inspection of a plasma processing apparatus be reduced, especially when the apparatus is in the development stage.
- The radiofrequency electrical characteristics of each of the chambers of a plasma processing apparatus or a plasma processing system are defined by its shape, that is, by the mechanical dimensions. However, the dimensions of each of the components constituting each plasma chamber vary due to the mechanical tolerance permitted during the manufacturing process. When such components are assembled to make a plasma chamber, the plasma chamber has variations due to both the mechanical tolerance and the assembly tolerance. No method has been available for determining whether the overall plasma chamber has the designed radiofrequency electrical characteristics since some portions are not measurable after assembly of the components. Thus, there has been no effective means for examining differences in radiofrequency electrical characteristics among the plasma chambers.
- As a consequence, the following problems have arisen.
- A plasma processing apparatus and a plasma processing system, both comprising a plurality of plasma chambers, are not designed to eliminate the differences in radiofrequency electrical characteristics such as impedance and resonant frequency characteristics among the plasma chambers. Thus, it is possible that the effective power consumed in each of plasma spaces and the density of the generated plasma will differ between each of the plasma chambers.
- Also, the same plasma processing results may not be obtained even when the same process recipe is applied to these plasma chambers.
- Accordingly, in order to obtain the same plasma processing results, external parameters such as gas flow/pressure, power supply, process time, and the like must be compared with the process results according to evaluation methods (1) to (3) described above for each of the plasma chambers so as to determine the correlation between them. However, the amount of data is enormous, and it is a practical impossibility to completely carry out the comparison.
- When the inspection methods such as (1) to (3) described above are employed to validate and evaluate the operation of the plasma processing apparatus, it becomes necessary to actually operate the plasma processing apparatus and to examine the treated substrates using an ex-situ inspection method comprising a plurality of steps.
- Such an examination takes several days to several weeks to yield evaluation results, and the characteristics of the substrates manufactured during that period, assuming that the manufacturing line is not stopped, remain unknown during that period. If the status of the plasma processing apparatus is not satisfactory, the resulting products will not meet predetermined standards. In this respect, a method that facilitates maintenance of the plasma processing apparatus has been demanded.
- Moreover, when the inspection methods such as (1) to (3) described above are employed to inspect the plasma processing apparatus, or systems having a plurality of plasma chambers, plural plasma chambers must be adjusted so as to eliminate the differences between chambers and processing variations and to obtain the same processing result using the same process recipe at the time of initial installation or maintenance/inspection of the apparatus. The time required for such adjustment may be months. Thus, it has been demanded that the time required for such adjustment be reduced. Also, the cost of substrates for inspection, the cost of processing the substrates for inspection, the labor cost for workers involved with the adjustment, and so forth are significantly high, and a reduction in these costs has likewise been demanded.
- Accordingly, the objects of the present invention are as follows.
- A first object of the present invention is to improve the processing speed, e.g., deposition rate when the present invention is applied to a deposition apparatus, by increasing the frequency of the plasma-exciting frequency.
- A second object of the present invention is to improve the uniformity of the plasma process in the planar direction of the treated substrate, e.g., improving the thickness distribution in the planar direction and processing distribution in the planar direction.
- A third object of the present invention, when applied to a plasma-enhanced CVD apparatus or a sputtering apparatus, is to improve the layer characteristics of the deposited layer such as isolation voltage and the like.
- A fourth object of the present invention is to reduce the electricity loss by improving the power consumption efficiency so that the same layer characteristics can be achieved with reduced power.
- A fifth object of the present invention is to reduce the operating cost and improve the production efficiency of the plasma processing apparatus.
- A sixth object of the present invention is to provide a reference for determining the validity of the plasma chamber operation other than that determined by examining the treated substrate.
- A seventh object of the present invention is to provide a plasma processing apparatus having a plurality of plasma chambers, the plasma chambers having a uniform radiofrequency electrical characteristics such as resonant frequency characteristics.
- An eighth object of the present invention is to provide a plasma processing apparatus having a plurality of plasma chambers capable of achieving a uniform plasma processing result by using the same process recipe.
- A ninth object of the present invention is to dispense with an examination of a vast amount of data regarding the plasma chambers, and a comparison of the results of inspection methods, such methods as (1) to (3) described above, with the external parameters.
- A tenth object of the present invention is to reduce the time required to adjust the plasma chambers so that the plasma chambers achieve substantially the same process results by using the same process recipe.
- An eleventh object of the present invention is to provide a plasma processing apparatus or system which can be easily maintained.
- To accomplish the above-described objets, an aspect of the present invention provides a plasma processing apparatus having a plasma processing chamber having a plasma excitation electrode for exciting a plasma, a radio frequency generator for supplying a radiofrequency voltage to the electrode, a radiofrequency feeder connected to the electrode, and a matching circuit having an input end and an output end. The input end of the matching circuit is connected to the radiofrequency generator and the output end of the same is connected to an end of the radio frequency feeder to perform impedance matching between the plasma processing chamber and the radiofrequency generator. Herein, a first series resonant frequency f0 measured at the end of the radio frequency feeder is set so that three times the first series resonant frequency f0 is larger than a power frequency fe of the radiofrequency voltage.
- By so setting the first series resonant frequency f0 that three times the first series resonant frequency f0 is larger than the power frequency fe, power can be efficiently supplied to the plasma generating space even when a power having a frequency higher than approximately 13.56 MHz (the frequency conventionally used) is used. Moreover, when the same frequency as in the conventional process is supplied, the effective power consumed in the plasma space can be increased. As a result, the deposition rate, when the invention is applied to a deposition apparatus, can be improved.
- Since the first series resonant frequency f0 is mainly determined by the factors relating to the mechanical structure thereof, the first series resonant frequency f0 differs according to specific apparatuses. By setting the first series resonant frequency f0 to the above-described range, it becomes possible to provide each of the apparatuses with predetermined overall radiofrequency electrical characteristics and to achieve stable plasma generation. As a consequence, a plasma processing apparatus with an improved operational stability can be provided.
- The first series resonant frequency f0 is defined as follows.
- First, the dependency of the impedance of the plasma processing chamber on the frequency is examined. More specifically, the region of the plasma chamber in which measurements are taken is defined as described below, and the vector quantity (Z, θ) of the impedance in the thus-defined measured region is measured while varying the measuring voltage in such a range that the power frequency fe is included. Considering that the power frequency fe is typically set to 13.56 MHz, 27.12 MHz, 40.68 MHz, or the like, the measuring frequency is varied over the range of 1 MHz to 100 MHz, for example. Next, an impedance characteristic curve and a phase curve are drawn by plotting the impedance Z and the phase θ versus the measuring frequency. Among the frequencies assigned to the minima of the impedance Z, the least significant frequency is defined as the first series resonant frequency f0.
- Next, the region of the plasma chamber in which the impedance measurement is taken will be described.
- The plasma chamber is connected to the radiofrequency generator via the matching circuit. The measured region starts from the output end position of the matching circuit and extends toward the output side of the plasma chamber.
- More particularly, since most of the matching circuits are provided with a plurality of passive elements so that the impedance adjustment can be carried out according to the change in the plasma state inside the plasma chamber, the matching circuit is disconnected from the plasma processing chamber at the output end position of the passive element disposed at the last output stage in the matching circuit during the measurement, and the measured region starts from that output end position.
- Preferably, the first series resonant frequency f0 is set so that 1.3 times the first series resonant frequency f0 is larger than the power frequency fe. In this manner, the density of the generated plasma can be further increased, and the processing rate can thus be further improved. The deposition rate can be improved when applied to a deposition apparatus. Because the density of the generated plasma is increased, it become possible to improve the characteristics of the deposited layer. For example, the isolation voltage of the deposited layer can be improved. The increase in plasma density also results in an improvement in the uniformity of the deposited layer in the planar direction. Thus, variations in the layer planar characteristics such as layer thickness and isolation voltage can be avoided.
- More preferably, the first series resonant frequency f0 is set to be larger than three times the power frequency fe. In this manner, it becomes possible to reduce the power required to achieve the same processing rate. Thus, the planar uniformity of the layer and the layer characteristics as conventionally achieved can be reduced, saving energy and reducing operation costs. When applied to a deposition apparatus, the deposition rate, the uniformity in layer thickness, and the isolation voltage can all be improved.
- Yet more preferably, a series resonant frequency f0′ defined by the capacitance between the above-described plasma excitation electrode and a counter electrode, which works in cooperation with the plasma excitation electrode to generate a plasma, may also be used. In such a case, the series resonant frequency f0′ is set to be larger than three times the power frequency fe. In this manner, the frequency characteristics of the capacitance between the above-described electrodes which generate a plasma can be directly defined, power can be more efficiently supplied to the plasma emission space, and further improvements in power consumption efficiency and in processing efficiency can be achieved.
-
- wherein D represents the distance between the plasma excitation electrode and the counter electrode, and δ represents the sum of the distance between the plasma excitation electrode and the generated plasma and the distance between the counter electrode and the generated plasma.
- A model capacitance between the electrodes during plasma emission can be obtained from the sum δ of the distances of the portions of the space between electrodes not emitting plasma. Then, the frequency characteristics defined from this model capacitance are set in relation to the frequency characteristics defined from the capacitance between electrodes not emitting plasma, which is determined by the interelectrode distanced.
- The distance between the parallel-plate-type electrodes can be considered as δ because the generated plasma between the electrodes can be considered as a conductor. As a result, the apparent capacitance between the electrodes is d/δ times the capacitance C0, which is the capacitance when plasma is not emitted. Since the first series resonant frequency f0 is proportional to the reciprocal of the square root of the capacitance C0, the series resonant frequency during the plasma emission is proportional to the reciprocal of the square root of d/δ. Thus, when the value of the first series resonant frequency f0 times the reciprocal of the square root of d/δ is set to be larger than the power frequency fe, the first series resonant frequency between the electrodes during plasma emission can be set in relation to the power frequency fe, and the power consumption efficiency during plasma emission can be improved.
- A resonant frequency measuring terminal for measuring the resonant frequency of the plasma processing chamber may be provided in the vicinity of the end of the radiofrequency feeder. It becomes possible to easily measure, using probes, the impedance characteristics and to define the resonant frequency characteristics of the plasma chamber without having to mechanically detach the matching circuit from the conductor for power supply. Thus, the operation efficiency of the measurement of the first series resonant frequency f0 can be improved.
- The plasma processing apparatus further includes a switch provided between the radiofrequency feeder and the resonant frequency measuring terminal. The switch electrically disconnects the end of the radiofrequency feeder from the resonant frequency measuring terminal and connects the end of the radiofrequency feeder to the output end of the matching circuit during plasma excitation. Hereinafter, such a state of the plasma processing apparatus is referred to as being in “a plasma excitation mode”. The switch electrically connects the end of the radiofrequency feeder to the resonant frequency measuring terminal and disconnects the end of the radiofrequency feeder from the resonant frequency measuring terminal during measurement of the resonant frequency. Hereinafter, such a state of the plasma processing apparatus is referred to as being in “a measuring mode”. Because the matching circuit connected in parallel to the plasma chamber to be measured, as viewed from the impedance measuring terminal, can be detached using the switch, it becomes unnecessary to mechanically detach/attach the conductor for power supply from the matching circuit. Thus, the impedance characteristics of the plasma chamber can be measured with ease, and the measurement of the first series resonant frequency f0 can be performed with an improved accuracy.
- The plasma processing apparatus may include a measuring unit which is detachably connected to the resonant frequency measuring terminal. The impedance meter can avoid electrical influence acting during plasma emission by detaching the impedance measuring terminal and the impedance meter from the plasma chamber or by operating the switch. When a plurality of plasma chambers are provided, one impedance meter may perform the measurement of these plasma chambers. Thus, the impedance characteristics, measurement of the resonant frequency characteristics, and measurement of the first series resonant frequency f0 can be easily carried out simply by operating the switch, without having to detach the matching circuit from the plasma chamber (plasma processing room) and detach the probes of the impedance meter from the impedance measuring terminal.
- The resonant frequency characteristic in the plasma excitation mode and the resonant frequency characteristic in the measuring mode may be set to equal each other. In this manner, neither correction nor reduction is necessary to obtain the actual value of the first series resonant frequency f0. Thus, the efficiency of operation can be improved.
- In this invention, the plasma processing apparatus may be a dual-frequency excitation type having a first radiofrequency generator, a radiofrequency electrode coupled to the first radiofrequency generator, a radiofrequency electrode-side matching box including a matching circuit for performing impedance matching between the first radiofrequency generator and the radiofrequency electrode, a second radiofrequency generator, a susceptor electrode, which is connected to the second radiofrequency generator and disposed to oppose the radiofrequency electrode, for supporting a substrate to be treated, and a susceptor electrode side matching box including a matching circuit for performing impedance matching between the second radiofrequency generator and the susceptor electrode. In such a case, the above-described settings can be applied to the power frequency of the second radiofrequency generator and the first series resonant frequency f0 measured from the output end of the susceptor-electrode-side matching circuit.
- Another aspect of the present invention provides a performance validation system for the above-described plasma processing apparatus. The system includes at least one client terminal and performance information providing means for providing performance information to the at least one client terminal. The performance information includes standard operation information regarding general information of the plasma processing apparatus, and operation and maintenance information regarding specific information of the plasma processing apparatus. The client terminal has at least the functions of requesting the display of performance information, and uploading the operation and maintenance information to the performance information providing means. In this manner, it is possible to provide the customer who is considering purchasing of the new apparatus with reference information which would help the customer to make decisions. Also, it is possible to easily provide the customer who purchased the apparatus with information regarding the operating state and maintenance state of the purchased apparatus.
- Preferably, the standard performance information, and the operation and maintenance information, include information regarding a first series resonant frequency f0. When the above-described performance information includes the information regarding the first series resonant frequency f0, which serves as one of parameters of the plasma processing apparatus, it is possible to provide the customer with information that allows a customer to examine the performance of the purchased plasma processing apparatus, and information that allows a customer considering purchasing the apparatus with reference information which would help the customer making the decision.
- The above-described standard performance information may be used as catalog or a specification statement when output through the client terminal.
- According to another aspect of the present invention, a plasma processing apparatus comprises a plurality of plasma processing chamber units, each plasma processing chamber unit comprising a plasma processing chamber having a plasma excitation electrode for exciting a plasma, a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode, a radiofrequency feeder connected to the plasma excitation electrode, and a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator and the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator, wherein a variation, defined by (Amax−Amin)/(Amax+Amin), between the maximum frequency Amax and the minimum frequency Amin among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value. Further wherein, in each plasma processing chamber unit, the radiofrequency characteristic A thereof is measured at a measuring point which is at the end of the corresponding radiofrequency feeder connected to the output terminal of the corresponding matching circuit.
- According to another aspect of the present invention, a plasma processing apparatus comprises a plurality of plasma processing chamber units, each plasma processing chamber unit comprising a plasma processing chamber having a plasma excitation electrode for exciting a plasma, a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode, a radiofrequency feeder connected to the plasma excitation electrode, and a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator via a radiofrequency feed line, and whereas the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator. Further wherein a variation, defined by (Amax−Amin)/(Amax+Amin), between the maximum frequency Amax and the minimum frequency Amin among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, and wherein, in each plasma processing chamber unit, the radiofrequency characteristic A thereof is measured at a measuring point which is the radiofrequency-generator-side end of the radiofrequency feed line connected to the respective radiofrequency generator.
- According to another aspect of the present invention, a plasma processing apparatus comprises a plurality of plasma processing chamber units, each plasma processing chamber unit comprising a plasma processing chamber having a plasma excitation electrode for exciting a plasma, a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode, a radiofrequency feeder connected to the plasma excitation electrode, and a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator via a radiofrequency feed line, and whereas the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator. Further wherein a variation, defined by (Amax−Amin)/(Amax+Amin) between the maximum frequency Amax and the minimum frequency Amin among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, and wherein, in each plasma processing chamber unit, the radiofrequency characteristic A thereof is measured at a measuring point which is the input terminal connected to the corresponding radiofrequency feed line.
- In these aspects, the predetermined value is preferably less than 0.1 and more preferably less than 0.03.
- Each radiofrequency characteristic A may be any one of a resonant frequency f, an impedance Ze at the frequency of the radiofrequency generator, a resistance Re at the frequency of the radiofrequency generator, and a reactance Xe at the frequency of the radiofrequency generator. Alternatively, each radiofrequency characteristic A may be a first series resonant frequency f0.
- Preferably, three times the first series resonant frequency f0 corresponding to each plasma processing chamber is larger than the frequency fe of the radiofrequency waves.
- Preferably, each plasma processing chamber has a measuring terminal for measuring the radiofrequency characteristic A thereof at the corresponding measuring point.
- Each plasma processing chamber may have a switch in the vicinity of the corresponding measuring point in which the switch electrically disconnects the measuring point from the measuring terminal and connects the radiofrequency feeder to the radiofrequency generator in a plasma excitation mode in which the plasma is excited. The switch electrically connects the measuring point to the measuring terminal and disconnects the radiofrequency generator from the measuring point in a measuring mode in which the radiofrequency characteristic A of the corresponding plasma processing chamber is measured.
- The radiofrequency characteristic A measured at the output end of the matching circuit in the excitation mode in which the switch electrically disconnects the radiofrequency feeder terminal from the measuring terminal and connects the radiofrequency feeder terminal to the output end of the matching circuit can be equalized to the radiofrequency characteristic A measured at the measuring terminal in the measuring mode in which the switch electrically connects the radiofrequency feeder terminal to the measuring terminal and disconnects the radiofrequency feeder terminal from the output end of the matching circuit.
- According to another aspect of the present invention, a plasma processing system comprises a plurality of plasma processing apparatuses, each plasma processing apparatus comprising a plasma processing chamber having a plasma excitation electrode for exciting a plasma, a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode, a radiofrequency feeder connected to the plasma excitation electrode, and a matching circuit having an input terminal and an output end, wherein the input terminal is connected to the radiofrequency generator via the radiofrequency feeder, and whereas the output end is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator Further wherein a variation, defined by (Amax−Amin)/(Amax+Amin), between the maximum frequency Amax and the minimum frequency Amin among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, and wherein, in each plasma processing chamber, the radiofrequency characteristic A thereof is measured at a measuring point which is the radiofrequency-generator-side end of the radiofrequency feed line connected to the respective radiofrequency generator.
- According to another aspect of the present invention, a plasma processing system comprises a plurality of plasma processing apparatuses, each plasma processing apparatus comprising a plasma processing chamber having a plasma excitation electrode for exciting a plasma, a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode, a radiofrequency feeder connected to the plasma excitation electrode, and a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator via a radiofrequency feed line, and whereas the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator. Further wherein a variation, defined by (Amax−Amin)/(Amax+Amin) , between the maximum frequency Amax and the minimum frequency Amin among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, and wherein, in each plasma processing chamber, the radiofrequency characteristic A thereof is measured at a measuring point which is the radiofrequency-generator-side end of the radiofrequency feed line connected to the respective radiofrequency generator.
- According to another aspect of the present invention, a plasma processing system comprises a plurality of plasma processing apparatuses, each plasma processing apparatus comprising a plasma processing chamber having a plasma excitation electrode for exciting a plasma, a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode, a radiofrequency feeder connected to the plasma excitation electrode, and a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator via a radiofrequency feed line, and whereas the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator. Further wherein a variation, defined by (Amax−Amin)/(Amax+Amin), between the maximum frequency Amax and the minimum frequency Amin among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, and wherein, in each plasma processing chamber, the radiofrequency characteristic A thereof is measured at a measuring point which is the input terminal connected to the corresponding radiofrequency feed line.
- As described above, a resonant frequency measuring unit can be connected to the measuring terminal of each plasma processing chamber by a switching operation.
- In the present invention, the radiofrequency characteristic A between the measuring point and the resonant frequency measuring unit connected to the measuring terminal can be equalized among these plasma processing chambers.
- The radiofrequency characteristic A measured at the output end of the matching circuit in the excitation mode in which the switch electrically disconnects the radiofrequency feeder terminal from the measuring terminal and connects the radiofrequency feeder terminal to the output end of the matching circuit can be equalized to the radiofrequency characteristic A measured at the measuring terminal in the measuring mode in which the switch electrically connects the radiofrequency feeder terminal to the measuring terminal and disconnects the radiofrequency feeder terminal from the output end of the matching circuit.
- According to another aspect of the present invention, in a performance validation system for a plasma processing apparatus or system, the system comprises at least one client terminal, and a performance information providing means for providing performance information to the client terminal. The performance information comprises standard operation information regarding general information of the plasma processing apparatus, and operation and maintenance information regarding specific information of the plasma processing apparatus. The client terminal has at least the functions of requesting the display of performance information, and uploading the operation and maintenance information to the performance information providing means.
- The standard performance information, and the operation and maintenance information, may comprise information regarding a first series resonant frequency f0.
- Moreover, the standard performance information may be used as a catalog or a specification document.
- According to another aspect of the present invention, in an inspection method of a plasma processing apparatus comprising a plurality of plasma processing chamber units, each plasma processing chamber unit comprises a plasma processing chamber having a plasma excitation electrode for exciting a plasma, a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode, a radiofrequency feeder connected to the plasma excitation electrode, and a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator and the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator. Further wherein a variation, defined by (Amax−Amin)/(Amax+Amin) between the maximum frequency Amax and the minimum frequency Amin among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, and wherein, in each plasma processing chamber unit, the radiofrequency characteristic A thereof is measured at a measuring point which is at the end of the corresponding radiofrequency feeder connected to the output terminal of the corresponding matching circuit.
- According to another aspect of the present invention, in an inspection method of a plasma processing apparatus comprising a plurality of plasma processing chamber units, each plasma processing chamber unit comprises a plasma processing chamber having a plasma excitation electrode for exciting a plasma, a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode, a radiofrequency feeder connected to the plasma excitation electrode, and a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator via a radiofrequency feed line, and whereas the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator. Further wherein a variation, defined by (Amax−Amin)/(Amax+Amin) between the maximum frequency Amax and the minimum frequency Amin among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, and wherein, in each plasma processing chamber unit, the radiofrequency characteristic A thereof is measured at a measuring point which is the radiofrequency-generator-side end of the radiofrequency feed line connected to the respective radiofrequency generator.
- According to another aspect of the present invention, in an inspection method of a plasma processing apparatus comprising a plurality of plasma processing chamber units, each plasma processing chamber unit comprises a plasma processing chamber having a plasma excitation electrode for exciting a plasma, a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode, a radiofrequency feeder connected to the plasma excitation electrode, and a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator via a radiofrequency feed line, and whereas the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator. Further wherein a variation, defined by (Amax−Amin)/(Amax+Amin) between the maximum frequency Amax and the minimum frequency Amin among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, and wherein, in each plasma processing chamber unit, the radiofrequency characteristic A thereof is measured at a measuring point which is the input terminal connected to the corresponding radiofrequency feed line.
- According to another aspect of the present invention, in an inspection method of a plasma processing system comprising a plurality of plasma processing apparatuses, each plasma processing apparatus comprises a plasma processing chamber having a plasma excitation electrode for exciting a plasma, a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode, a radiofrequency feeder connected to the plasma excitation electrode, and a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator and the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator. Further wherein a variation, defined by (Amax−Amin)/(Amax+Amin), between the maximum frequency Amax and the minimum frequency Amin among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, and wherein, in each plasma processing chamber, the radiofrequency characteristic A thereof is measured at a measuring point which is at the end of the corresponding radiofrequency feeder connected to the output terminal of the corresponding matching circuit.
- According to another aspect of the present invention, in an inspection method of a plasma processing system comprising a plurality of plasma processing apparatuses, each plasma processing apparatus comprises a plasma processing chamber having a plasma excitation electrode for exciting a plasma, a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode, a radiofrequency feeder connected to the plasma excitation electrode, and a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator via a radiofrequency feed line, and whereas the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator. Further wherein a variation, defined by (Amax−Amin)/(Amax+Amin), between the maximum frequency Amax and the minimum frequency Amin among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, and wherein, in each plasma processing chamber, the radiofrequency characteristic A thereof is measured at a measuring point which is the radiofrequency-generator-side end of the radiofrequency feed line connected to the respective radiofrequency generator.
- According to another aspect of the present invention, in an inspection method of a plasma processing system comprising a plurality of plasma processing apparatuses, each plasma processing apparatus comprises a plasma processing chamber having a plasma excitation electrode for exciting a plasma, a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode, a radiofrequency feeder connected to the plasma excitation electrode, and a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator via a radiofrequency feed line, and whereas the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator. Further wherein a variation, defined by (Amax−Amin)/(Amax+Amin) , between the maximum frequency Amax and the minimum frequency Amin among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, and wherein, in each plasma processing chamber, the radiofrequency characteristic A thereof is measured at a measuring point which is the input terminal connected to the corresponding radiofrequency feed line.
- In the present invention, the variation between the maximum frequency Amax and the minimum frequency Amin among radiofrequency characteristics A of the plurality of plasma processing chambers is defined by relationship (10A):
- (Amax−Amin)/(Amax+Amin) (10A)
- wherein, in each plasma processing chamber, the radiofrequency characteristic A thereof is measured at the measuring point which is at the end of the corresponding radiofrequency feeder connected to the output terminal of the corresponding matching circuit. Since this variation has a predetermined value, there is no variation in radiofrequency electrical characteristics, such as impedance and resonant frequency characteristics, between the plasma chambers (plasma processing chamber units). Thus, the impedance and resonant frequency characteristics of the plasma chambers can be controlled so as to be within predetermined range. Accordingly, these individual plasma chambers consume substantially the same electrical energy in the corresponding plasma spaces.
- Accordingly, substantially the same result is achieved from a single process recipe for these different plasma chambers. When films are formed in these plasma chambers, these films can have substantially the same characteristics (e.g., the same thickness, isolation voltage, and etching rate).
- Instead of the above measuring point, the radiofrequency characteristic A of each plasma processing chamber may also be measured at a measuring point which is the radiofrequency-generator-side end of the radiofrequency feed line connected to the respective radiofrequency generator. These plasma chambers, including plasma processing chambers and matching circuits, have substantially the same radiofrequency electrical characteristics. Thus, these individual plasma chambers consume substantially the same electrical energy in the corresponding plasma spaces. Accordingly, substantially the same result is more effectively achieved from a single process recipe for these different plasma chambers as compared to a method that does not include a matching circuit in the range to be measured.
- Instead of the above measuring point, the radiofrequency characteristic A thereof may also be measured at a measuring point which is the input terminal connected to the corresponding radiofrequency feeder. These plasma chambers, including matching circuits and radiofrequency feeders, have substantially the same radiofrequency electrical characteristics. Thus, these individual plasma chambers consume substantially the same electrical energy in the corresponding plasma spaces. Accordingly, substantially the same result is further effectively achieved from a single process recipe for these different plasma chambers as compared to a method that does not include a matching circuit and a radiofrequency feeder in the range to be measured.
- When the predetermined value is less than 0.1, the variation in thicknesses of films which are deposited under substantially the same conditions in different chambers can be controlled to be within ±5%, resulting in uniform plasma processing.
- When the predetermined value is less than 0.03, these plasma chambers have substantially the same radiofrequency electrical characteristics (e.g., impedance and resonant frequency characteristics). Thus, the impedance characteristics of these plasma chambers can be controlled to be in a predetermined range so that these plasma chambers have substantially the same electrical energy in the plasma spaces.
- Accordingly, substantially the same result is achieved from a single process recipe for these different plasma chambers. When films are formed in these plasma chambers, these films can have substantially the same characteristics (e.g., the same thickness, isolation voltage, and etching rate). When the predetermined value is less than 0.03, the variation in thicknesses of films which are deposited under substantially the same conditions in different chambers can be controlled to be within ±2%.
- In the present invention, one of the resonant frequency f, the impedance Ze, the resistance Re, and the reactance Xe at the frequency of the radiofrequency waves is employed as the radiofrequency characteristic A so that the different plasma chambers have substantially the same radiofrequency electrical characteristics. Since these plasma chambers can be operated under conditions within the predetermined ranges using impedance characteristics as references, these plasma chambers consume substantially the same electrical energy in the plasma spaces thereof.
- The resonant frequency f is determined by measuring the dependence of the impedance Z on the frequency. In contrast, the impedance Ze at the frequency for exciting the plasma can be readily determined without determining the dependence of the radiofrequency characteristics of the plasma chamber on the frequency. Moreover, the impedance Ze more directly reflects the radiofrequency electrical characteristics of the plasma chamber at the plasma excitation frequency.
- When the resistance Re or the reactance Xe is employed, this can more directly reflect the radiofrequency electrical characteristic at the plasma excitation frequency of the plasma chamber as compared with the impedance Ze, which corresponds to the vector defined by the resistance Re and the reactance Xe.
- The radiofrequency characteristic A may be the first series resonant frequency f0.
- The first series resonant frequency f0 is a radiofrequency electrical characteristic which is determined by various factors, such as the mechanical structure. Thus, it is believed that apparatuses in use have different first series resonant frequencies f0. In the present invention, the first series resonant frequency f0 is set to be within the above-mentioned predetermined range. Consequently, overall radiofrequency electrical characteristics of the individual chamber can be controlled, resulting in the generation of a highly stable plasma in each plasma chamber. In other words, the operations of the individual plasma chambers of the plasma processing apparatus or system are uniform and stable.
- This process does not require a determination of the process conditions based on the relationship between enormous amounts of data for the individual plasma chambers and the results obtained by evaluation of actually processed substrates. Thus, in the installation of new systems and inspection of installed systems, the time required for obtaining substantially the same results using the same process recipe in these plasma chambers can be significantly reduced as compared with an inspection process by actual deposition onto the substrates to be processed. Thus, the production line can reduce the cost of substrates used in the inspection, processing of these substrates, and labor during the inspection operations.
- Preferably, three times the first series resonant frequency f0 corresponding to each plasma processing chamber is larger than the frequency fe of the radiofrequency waves. Thus, electrical power can be effectively introduced into the plasma space when the radiofrequency is higher than 13.56 MHz (which is used in conventional methods). As a result, the deposition rate of the film is improved.
- In the plasma processing apparatus of the present invention, each plasma processing chamber preferably has a measuring terminal for measuring the radiofrequency characteristic A thereof at the corresponding measuring point. In addition, each plasma processing chamber preferably has a switch in the vicinity of the corresponding measuring point in which the switch electrically disconnects the measuring point from the measuring terminal and connects the plasma excitation electrode to the radiofrequency generator in a plasma excitation mode (in which the plasma is excited), whereas the switch electrically connects the measuring point to the measuring terminal and disconnects the radiofrequency generator from the measuring point in a measuring mode in which the radiofrequency characteristic A of the corresponding plasma processing chamber is measured. In the measuring mode, the switch disconnects the measuring terminal from the radiofrequency generator, the radiofrequency feed line, the matching circuit, the radiofrequency feeder, or the plasma excitation electrode. Thus, a probe can be readily connected to the impedance measuring terminal when the impedance characteristics of each plasma chamber are measured. Moreover, the switch does not require mechanical detachment of the obstacle components, such as the radiofrequency generator, the radiofrequency feed line, the matching circuit, and the radiofrequency feeder, when the impedance characteristics of each plasma chamber are measured. Thus, the radiofrequency characteristic A can be more precisely measured in each plasma chamber. Moreover, the radiofrequency characteristics A of a plurality of plasma chambers can be readily measured. Thus, in the installation of new systems and the inspection of installed systems, the time required for obtaining substantially the same results using the same process recipe in these plasma chambers can be significantly reduced as compared with conventional inspection process (which requires a monthly period).
- More specifically, each plasma processing chamber has the measuring terminal for measuring the radiofrequency characteristic A thereof in the vicinity of an end of the radiofrequency feeder. In addition, each plasma processing chamber has the switch between the end of the radiofrequency feeder and the measuring point in which the switch electrically disconnects the radiofrequency feeder from the measuring terminal and connects the end of the radiofrequency feeder to the output terminal of the matching circuit in a plasma excitation mode (in which the plasma is excited), whereas the switch electrically connects the end of the radiofrequency feeder to the measuring terminal and disconnects the end of the radiofrequency feeder from the output terminal of the matching circuit in a measuring mode in which the radiofrequency characteristic A of the plasma processing chamber is measured. In the measuring mode, the switch disconnects the conductor for supplying electrical power from the matching circuit. Thus, a probe can be readily connected to the impedance measuring terminal when the impedance characteristics of each plasma chamber is measured. Since the matching circuit is disconnected by the switch, the impedance characteristics of the plasma chamber can be more exactly measured via the switch. Thus, the first series resonant frequencies f0 of a plurality of plasma chambers can be readily measured. In the installation of new systems and the inspection of installed systems, the time required for obtaining substantially the same results using the same process recipe in these plasma chambers can be significantly reduced as compared with conventional inspection process (which requires a monthly period).
- Since the impedance meter is detachable in the present invention, the impedance meter is detached from the measuring terminal or disconnected from the measuring terminal by a switch in the plasma excitation mode. Thus, the impedance meter is not electrically affected in the plasma excitation mode. The radiofrequency characteristics A, and particularly first series resonant frequencies f0 of these plasma chambers, can be readily measured by measuring the impedance or the like by operating the switch without disconnecting the impedance meter from the plasma chambers.
- The connection may be sequentially switched to the measuring terminals of these plasma chambers to measure the radiofrequency characteristics of these plasma chambers using a single impedance meter.
- Using the above switch, the radiofrequency characteristic A measured at the radiofrequency generator side when the measuring point is electrically disconnected from the measuring terminal while the radiofrequency feeder is electrically connected to the radiofrequency generator is preferably equalized to the radiofrequency characteristic A measured at the measuring terminal side when the measuring point is electrically connected to the measuring terminal while the radiofrequency generator is electrically disconnected from the measuring point. More specifically, using the above switch, the radiofrequency characteristic A at the output end of the matching circuit when an end of the radiofrequency feeder is electrically disconnected from the measuring terminal while the end of the radiofrequency feeder is electrically connected to the output end of the matching circuit may be equalized to the radiofrequency characteristic A at the measuring terminal when the end of the radiofrequency feeder is electrically connected to the measuring terminal while the end of the radiofrequency feeder is electrically disconnected from the output end of the matching circuit. More specifically, the radiofrequency characteristic A at the output terminal of the matching circuit when an end of the radiofrequency feeder is electrically disconnected from the measuring terminal while the end of the radiofrequency feeder is electrically connected to the output terminal of the matching circuit may be equalized to the radiofrequency characteristic A at the measuring terminal when the end of the radiofrequency feeder is electrically connected to the measuring terminal while the end of the radiofrequency feeder is electrically disconnected from the output terminal of the matching circuit. Thus, the values such as impedance measured with the impedance meter, which is connected to the measuring terminals of the plasma chambers, include the same correction factor from the measuring points. Thus, the observed radiofrequency characteristics A, such as the first series resonant frequency, can be used without correction, resulting in improved operation efficiency.
- The above-mentioned means may be performed as follows. The radiofrequency characteristic A between the measuring point and the impedance meter connected to the measuring terminal is set to be identical to each other in the plasma processing chamber units (plasma chambers). More specifically, the length of the coaxial cable from the output position of the final stage at the output side of the matching circuit to the impedance meter is equal in each of these units.
- The number of the plasma chambers provided in each plasma processing apparatus, the number of the plasma processing apparatuses in each plasma processing system, and the number of the plasma chambers may be appropriately determined in the present invention.
- If these plasma processing apparatuses are used by different process recipes, the radiofrequency characteristics A, such as first series resonant frequency f0, may be determined for each plasma processing apparatus in the same plasma processing system.
- In the present invention, the plasma enhanced CVD unit may be of a dual-frequency excitation type which has a first radiofrequency generator, a radiofrequency electrode connected to the first radiofrequency generator, a radiofrequency electrode side matching box having a matching circuit for impedance matching between the first radiofrequency generator and the radiofrequency electrode, a second radiofrequency generator, a susceptor electrode which opposes the radiofrequency electrode, which is connected to the second radiofrequency generator, and supports a substrate to be treated, and a susceptor side matching box having a matching circuit for impedance matching between the second radiofrequency generator and the susceptor electrode. The frequency of the radiofrequency waves and the radiofrequency characteristics A, such as first series resonant frequency f0, which are measured at the output terminal of the matching circuit at the susceptor side, may be determined as in the cathode electrode side.
- In the performance validation system for the plasma processing apparatus or the plasma processing system of the present invention, a maintenance engineer uploads performance information that shows the status of the operational performance of each plasma processing apparatus purchased by a customer. The customer can obtain the standard performance information, which is useful for determining the purchase of the apparatus or system, and the operation and maintenance information, including radiofrequency characteristics A, such as first series resonant frequency f0, of the apparatus or system in use with his terminal via a public line. The performance information can also be generated in the form of a catalog or specification documents.
- In the inspection method of the plasma processing apparatus or system, a variation between the maximum frequency Amax and the minimum frequency Amin among radiofrequency characteristics A of the plurality of plasma processing chambers of the apparatus of system is defined by the relationship (10A):
- (Amax−Amin)/(Amax+Amin) (10A)
- By checking whether the variation lies within a predetermined value, it can be confirmed that these plasma chambers are set to have substantially the same radiofrequency electrical characteristics, such as impedance and resonant frequency characteristics. Since the impedance characteristics and the like of these plasma chambers can be controlled within a predetermined range, these plasma chambers consume substantially the same electrical power in the plasma space and generate substantially the same plasma density.
- Accordingly, substantially the same result is achieved from a single process recipe for these different plasma chambers. When films are formed in these plasma chambers, these films can have substantially the same characteristics (e.g., the same thickness, isolation voltage, and etching rate).
- The radiofrequency electrical characteristics of each plasma chamber are determined by the size and the shape thereof. Since each component constituting the plasma chamber has a variation in size due to the machining tolerance that is inevitable in the mechanical processing for the chamber production. In addition, each plasma chamber has an assembling tolerance. Moreover, the plasma chamber includes portions in which sizes thereof are not measured after assembling. This inspection method, however, quantitatively determines the performance of plasma chambers regardless of the unmeasurable portions and differences in radiofrequency electrical characteristics between these chambers.
- Alternatively, in each plasma processing chamber unit, the radiofrequency characteristic A thereof is measured at a measuring point which is the radiofrequency-generator-side end of the radiofrequency feed line connected to the respective radiofrequency generator. In this case, differences in radiofrequency electrical characteristics between a plurality of plasma chambers including matching circuits are set to be substantially zero. Thus, these plasma chambers consume substantially the same electrical power in the plasma spaces. Accordingly, substantially the same result is more readily achieved from a single process recipe for these different plasma chambers as compared with a case in which the matching circuit is not included in the measuring range.
- Alternatively, in each plasma processing chamber unit, the radiofrequency characteristic A thereof is measured at a measuring point which is the input terminal connected to the corresponding radiofrequency feed line. In this case, differences in radiofrequency electrical characteristics between a plurality of plasma chambers including matching circuits and radiofrequency feed lines are set to be substantially zero. Thus, the electrical power consumption in the plasma spaces of these plasma chambers becomes uniform. Accordingly, substantially the same result is more readily achieved from a single process recipe for these different plasma chambers as compared with a case in which the matching circuit and the radiofrequency feed line is included in the measuring range.
- By confirming that the variation is set to be less than 0.1 in this inspection method, it can be confirmed that the plasma processing is uniform. For example, whether the thickness of the film which is deposited in each plasma chamber under substantially the same conditions is controlled to be within ±5%.
- By confirming that the variation is set to be less than 0.03 in this inspection method, a plurality of plasma chambers are set to have substantially the same radiofrequency electrical characteristics (such as impedance and resonant frequency characteristics). Thus, it can be confirmed that the impedance characteristics are controlled to be within a predetermined range. Thus, the density of the plasma generated in each plasma chamber becomes uniform.
- Accordingly, the plasma chambers can be controlled as follows. Substantially the same result is achieved from a single process recipe for these different plasma chambers. When films are formed in these plasma chambers, these films can have substantially the same characteristics (e.g., the same thickness, isolation voltage, and etching rate. When the variation is controlled to be less than 0.03 under the same deposition conditions in the plasma chambers, the variation in film thickness can be controlled to be less than ±2%.
- In the inspection method of the plasma processing apparatus or system, as described above, each radiofrequency characteristic A may be any one of a resonant frequency f, an impedance Ze at the frequency of the radiofrequency generator, a resistance Re at the frequency of the radiofrequency generator, and a reactance Xe at the frequency of the radiofrequency generator. Thus, the impedance characteristics, such as impedance of a plurality of plasma chambers, are controlled to be within a predetermined range, and the effective electric energies consumed in the plasma spaces are set to be substantially equal.
- When the impedance Ze at the frequency of the radiofrequency generator is employed as the radiofrequency characteristic A, it is not necessary to find the dependence of the radiofrequency characteristic on the frequency in the plasma chambers. Thus, the impedance Ze at the frequency of the radiofrequency generator can be readily determined as compared with the resonant frequency f, which must be determined by the dependence of the impedance Z on the frequency. Moreover, the impedance Ze can directly reflect the radiofrequency electrical characteristic at the plasma excitation frequency of the plasma chambers.
- When the resistance Re or the reactance Xe is employed, this can more directly reflect the radiofrequency electrical characteristic at the plasma excitation frequency of the plasma chamber as compared with the impedance Ze, which corresponds to the vector defined by the resistance Re and the reactance Xe.
- The connection can be sequentially switched to the measuring terminals of these plasma chambers to measure the radiofrequency characteristics of these plasma chambers using a single impedance meter.
- Using the above switch, the radiofrequency characteristic A measured at the radiofrequency generator side when the measuring point is electrically disconnected from the measuring terminal while the radiofrequency feeder is electrically connected to the radiofrequency generator is equalized to the radiofrequency characteristic A measured at the measuring terminal side when the measuring point is electrically connected to the measuring terminal while the radiofrequency generator is electrically disconnected from the measuring point. Thus, the values such as the impedance measured with the impedance meter, which is connected to the measuring terminals of the plasma chambers, include the same correction factor from the measuring points. Thus, the observed radiofrequency characteristics A, such as the first series resonant frequency, can be used without correction, resulting in improved operation efficiency.
- FIG. 1 is an outline schematic view of a plasma processing apparatus in accordance with a first embodiment of the present invention;
- FIG. 2 is a schematic view of a matching circuit of the plasma processing apparatus shown in FIG. 1;
- FIG. 3 is a schematic view for illustrating impedance characteristics of the plasma processing apparatus of the first embodiment;
- FIG. 4 is an equivalent circuit diagram of the plasma processing apparatus shown in FIG. 3;
- FIG. 5 is a graph illustrating the dependence of the impedance Z and the phase θ on the frequency for defining a first series resonant frequency f0;
- FIG. 6 is a graph illustrating the dependence of the impedance Z and the phase θ on the frequency for defining a first series resonant frequency f0 in the first embodiment of the plasma processing apparatus;
- FIG. 7 is an outline schematic view of a plasma processing apparatus in accordance with a second embodiment of the present invention;
- FIG. 8 is a schematic view for illustrating impedance characteristics of the plasma processing apparatus of the second embodiment;
- FIG. 9 is an equivalent circuit diagram of the plasma processing apparatus shown in FIG. 8;
- FIG. 10 is a graph illustrating the dependence of the impedance Z and the phase θ on the frequency for defining a first series resonant frequency f0 in the second embodiment of the plasma processing apparatus;
- FIG. 11 is an outline schematic view of a plasma processing apparatus in accordance with a third embodiment of the present invention;
- FIG. 12 is an equivalent circuit diagram of the plasma processing apparatus shown in FIG. 11;
- FIG. 13 is a graph illustrating the dependence of the impedance Z and the phase θ on the frequency for defining a first series resonant frequency f0 in the third embodiment of the plasma processing apparatus;
- FIG. 14 is a schematic view of a plasma emission state between electrodes;
- FIG. 15 is an equivalent circuit diagram of an embodiment of the plasma processing apparatus in accordance with the present invention;
- FIG. 16 is an isometric view of a probe for an impedance meter;
- FIG. 17 is a schematic view illustrating connection of the probe for the impedance meter shown in FIG. 16;
- FIG. 18 is a schematic view of an exemplary conventional plasma processing apparatus;
- FIG. 19 is a schematic view of another conventional plasma processing apparatus;
- FIG. 20 is a schematic view illustrating a performance validation system of the plasma processing apparatus in accordance with the present invention;
- FIG. 21 is a flow chart illustrating a process for providing performance information from a server S in the performance validation system of the plasma processing apparatus of the present invention;
- FIG. 22 shows an output form of a main page CP in accordance with the performance validation system of the plasma processing apparatus of the present invention;
- FIG. 23 shows an output form of a subpage CP1 in accordance with the performance validation system of the plasma processing apparatus of the present invention;
- FIG. 24 shows an output form of a main page CP2 in accordance with the performance validation system of the plasma processing apparatus of the present invention;
- FIG. 25 shows an output form of a subpage CP3 in accordance with the performance validation system of the plasma processing apparatus of the present invention;
- FIG. 26 is an outline schematic view of a plasma processing apparatus in accordance with a fourth embodiment of the present invention;
- FIG. 27 is a cross-sectional view of the laser annealing chamber shown in FIG. 26;
- FIG. 28 is a cross-sectional view of the annealing chamber shown in FIG. 26;
- FIG. 29 is an outline schematic view of a plasma processing apparatus in accordance with a fifth embodiment of the present invention;
- FIG. 30 is an equivalent circuit diagram of the plasma processing apparatus shown in FIG. 11;
- FIG. 31 is an outline schematic view of a plasma processing system in accordance with a sixth embodiment of the present invention;
- FIG. 32 is an outline schematic view of another embodiment of the plasma processing apparatus in accordance with the present invention;
- FIG. 33 is an outline schematic view of another embodiment of the plasma processing apparatus in accordance with the present invention;
- FIG. 34 is an outline schematic view of another embodiment of the plasma processing apparatus in accordance with the present invention;
- FIG. 35 is an outline schematic view of a plasma processing unit (plasma chamber) of a plasma processing system in accordance with a seventh embodiment of the present invention;
- FIG. 36 is a schematic view for illustrating impedance characteristics of the plasma chamber shown in FIG. 35;
- FIG. 37 is an equivalent circuit diagram for measuring impedance characteristics of the plasma chamber shown in FIG. 36;
- FIG. 38 shows an output form of a subpage CP3 in accordance with the performance validation system of the plasma processing apparatus of the present invention;
- FIG. 39 shows an output form of a subpage CP4 in accordance with the performance validation system of the plasma processing apparatus of the present invention; and
- FIG. 40 is an outline schematic view of another plasma processing apparatus in accordance with a seventh embodiment of the present invention; and
- FIG. 41 is an outline schematic view of another plasma processing apparatus in accordance with a seventh embodiment of the present invention.
- First Embodiment
- A plasma processing apparatus according to a first embodiment of the present invention will now be described with reference to the drawings.
- FIG. 1 is a cross-sectional view schematically illustrating the structure of a plasma processing apparatus of the first embodiment. FIG. 2 illustrates a matching circuit of the plasma processing apparatus shown in FIG. 1.
- The plasma processing apparatus of this embodiment is of a single-frequency excitation type and performs plasma processing such as chemical vapor deposition (CVD), sputtering, dry etching, ashing, or the like. Referring to FIG. 1, the plasma processing apparatus comprises a plasma chamber (plasma processing chamber) CN having parallel
plate type electrodes radiofrequency generator 1 connected to theelectrode 4, and amatching circuit 2A for matching the impedance between the plasma chamber CN and theradiofrequency generator 1. - In the plasma processing apparatus of this embodiment, it is arranged that three times the first series resonant frequency f0 of the plasma chamber CN measured at an output position PR of the
matching circuit 2A is larger than the power frequency fe fed from theradiofrequency generator 1 to the plasma chamber CN, as described below. - To be more specific, as shown in FIGS. 1 and 2, in the plasma processing apparatus of this embodiment, the
plasma excitation electrode 4, which is connected to theradiofrequency generator 1, and ashower plate 5 are disposed in the upper portion of the plasma chamber CN. Theelectrode 8 serving as a susceptor electrode for receiving asubstrate 16 is provided facing theshower plate 5 in the lower portion of the plasma chamber CN. Theplasma excitation electrode 4 is connected to theradiofrequency generator 1 via a feed plate (radiofrequency feeder) 3 and thematching circuit 2A. Theplasma excitation electrode 4 and thefeed plate 3 are covered by achassis 21. Thematching circuit 2A is accommodated inside amatching box 2 composed of a conductor. - A silver-plated
copper plate 50 to 100 mm in width, 0.5 mm in thickness, and 100 to 300 mm in length is used as thefeed plate 3. Thefeed plate 3 is screwed to an output end of atuning capacitor 24 of thematching circuit 2A (described below) and theplasma excitation electrode 4. - At the lower side of the
plasma excitation electrode 4 functioning as the cathode, aprojection 4 a is provided. Theprojection 4 a is in contact with theshower plate 5 provided below theplasma excitation electrode 4. Theplasma excitation electrode 4 and theshower plate 5 define aspace 6. Agas feeding tube 17 is connected to thespace 6, and aninsulator 17 a is inserted midway in thegas feeding tube 17 so as to insulate theplasma excitation electrode 4 from the gas supply. - The gas from the
gas feeding tube 17 is fed to achamber space 60, formed by achamber wall 10, through a number ofholes 7 in theshower plate 5. Thechamber wall 10 and theplasma excitation electrode 4 are isolated from each other by aninsulator 9. The exhaust system is omitted from the drawing. - The susceptor electrode8 (wafer susceptor) which receives the
substrate 16 and also serves as a plasma excitation electrode is provided in thechamber space 60. - A
shaft 13 is joined to thesusceptor electrode 8 at the bottom center of thesusceptor electrode 8, and penetrates achamber bottom 10A. The lower portion of theshaft 13 and the center portion of thechamber bottom 10A are hermetically connected by abellows 11. The bellows 11 allows thesusceptor electrode 8 and theshaft 13 to move upward and downward so as to control the distance between theelectrodes - Because the
susceptor electrode 8, theshaft 13, and a supportingtube 12B are connected, thesusceptor electrode 8, theshaft 13, thebellows 11, thechamber bottom 10A, and the chamber wall have the same DC potential. Moreover, because thechamber wall 10 and thechassis 21 are connected, thechamber wall 10, thechassis 21, and thematching box 2 also have the same DC potential. - The
matching circuit 2A is generally constituted from a plurality of passive devices in order to adjust the impedance in response to changes in the state of the plasma inside the plasma chamber. - Referring to FIGS. 1 and 2, a
coil 23 and the tuningcapacitor 24, as the passive devices, are provided in thematching circuit 2A in series between theradiofrequency generator 1 and thefeed plate 3. Aload capacitor 22 is connected in parallel to thecoil 23 and the tuningcapacitor 24. One end of theload capacitor 22 is connected to thematching box 2. The tuningcapacitor 24 is connected to theplasma excitation electrode 4 via thefeed plate 3. - The
matching box 2 is connected to a shielding line of afeed line 1A that is a coaxial cable, and this shielding line is DC grounded. In this manner, thesusceptor electrode 8, theshaft 13, thebellows 11, thechamber bottom 10A, thechamber wall 10, thechassis 21, and thematching box 2 are set to a ground voltage while one end of theload capacitor 22 is DC-grounded. - In this embodiment, power with a frequency of 13.56 MHz or more, and more specifically, power with a frequency of 13.56 MHz, 27.12 MHz, or 40.68 MHz is used to generate a plasma between the
electrodes substrate 16 placed on thesusceptor electrode 8 is subjected to a plasma process such as CVD, dry etching, ashing, or the like. - At this stage, the radiofrequency voltage is supplied from the
radiofrequency generator 1 to the coaxial cable of thefeed line 1A, thematching circuit 2A, thefeed plate 3, and the plasma excitation electrode 4 (cathode electrode). As for the path of the radiofrequency current, the current flows into the plasma space (chamber space 60) via the above-described components, then to thesusceptor electrode 8, theshaft 13, thebellows 11, thechamber bottom 10A and thechamber wall 10, and finally into thechassis 21, thematching box 2, and the shielding line of thefeed line 1A, back to the earth of theradiofrequency generator 1. - Now, the first series resonant frequency f0 of the plasma processing apparatus of this embodiment will be described.
- The first series resonant frequency f0 is the least significant frequency among the frequencies assigned to the minima of the impedance Z when the dependency between the impedance and the frequency in the plasma chamber CN is measured. The first series resonant frequency f0 is set larger than the power frequency fe described above.
- The first series resonant frequency is an electrical radiofrequency property mainly determined by the mechanical structure and is measured as shown in FIGS. 3 and 4.
- FIG. 3 is an illustration for explaining the impedance property of the plasma processing apparatus, and FIG. 4 is an equivalent circuit diagram of the circuit shown in FIG. 3.
- The region of the plasma chamber CN to be measured is the region of the plasma chamber CN without the
matching circuit 2A, thematching circuit 2A being detached from the plasma chamber CN at an output end position of a passive device which is the final output stage among the passive devices of thematching circuit 2A. More particularly, the matching circuit is removed from the plasma chamber CN by removing the screws clamping thefeed plate 3 and thematching circuit 2A at the output end position PR of the tuningcapacitor 24 connected to thefeed plate 3 as shown in FIG. 3, and the remaining part of the plasma chamber CN is the measured region. - As shown by broken lines in FIG. 3, a
probe 105 of an impedance meter AN is connected to the output end position PR at which separation was carried out and to an earth position such as thechassis 21 of the plasma chamber CN. In this state, a,measuring frequency oscillated by the impedance meter AN is varied over the range of 1 MHz to 100 MHz so as to determine the vector quantity (Z, θ) of the impedance of the above-described measured region of the plasma chamber CN. - As shown in FIG. 3, the
probe 105 comprises aconductive line 110, aninsulation coating 112 provided on theconductive line 110, and aperipheral conductor 111 covering theinsulation coating 112. Theprobe 105 is connected to the impedance meter (resonant frequency meter) AN via a coaxial cable. - Next, as shown in FIG. 5, the impedance Z and phase θ (deg) are plotted along the ordinates of the graph having the abscissa indicating measuring frequency f (MHz). In the graph, the ordinate at the left side corresponds to impedance Z (Ω) and the ordinate at the right side corresponds to phase θ (degree). Referring to the impedance characteristic curve (shown by a solid line) and the phase curve (shown by a broken line) in FIG. 5, the first series resonant frequency f0 is defined as the frequency corresponding to the minimum value Zmin of the impedance, i.e., the frequency assigned to a phase θ of zero when the phase θ first goes from positive to negative while the measuring frequency f is increased.
- In the thus determined first series resonant frequency f0, the following electrical radiofrequency factors within the above-described measured region are taken into a consideration, as shown in FIG. 3:
- Inductance Lf and resistance Rf of the
feed plate 3; - Plasma electrode capacitance Ce between the
plasma excitation electrode 4 and thesusceptor electrode 8; - Inductance LC and resistance RC of the
shaft 13; - Inductance LB and resistance RB of the
bellows 11; - Inductance LA and resistance RA of the
chamber wall 10; - Capacitance CA between the
gas feeding tube 17 and theplasma excitation electrode 4 via theinsulator 17 a; - Capacitance CB between the
plasma excitation electrode 4 and thechassis 21; and - Capacitance CC between the
plasma excitation electrode 4 and thechamber wall 10. - These electrical radiofrequency factors are arranged in the same manner as in the circuit for generating plasma using radiofrequency current so as to form an equivalent circuit shown in FIG. 4. More specifically, the inductance Lf and resistance Rf of the
feed plate 3, the plasma electrode capacitance Ce between theplasma excitation electrode 4 and thesusceptor electrode 8, the inductance LC and resistance RC of theshaft 13, the inductance LB and resistance RB thebellows 11, and the inductance LA and resistance RA of thechamber wall 10 are connected in series in that order while having the resistance RA grounded. Between the resistance Rf and the plasma electrode capacitance Ce, the capacitance CA, the capacitance CB, and the capacitance CC are connected in parallel, one end of each being grounded. By determining the impedance characteristics of this equivalent circuit, the first series resonant frequency f0 of this embodiment can be defined. - The first series resonant frequency f0 is adjusted so that three times f0 is larger than the power frequency fe supplied from the
radiofrequency generator 1. - Examples of the methods for adjusting the first series resonant frequency f0 are as follows:
- (1) Adjusting the shape (length) of the
feed plate 3; - (2) Adjusting the overlapping area of the
plasma excitation electrode 4 and thechamber wall 10; - (3) Adjusting the insulating material between the
plasma excitation electrode 4 and thechamber wall 10; and - (4) Connecting the
susceptor electrode 8 and thechamber wall 10 with a conductor. - For example, in the plasma processing apparatus of this embodiment, the power frequency fe is set to 40.68 MHz and the impedance Z (Ω) and the phase θ (deg) relative to the measurement frequency f (MHz) ranging from 0 to 100 MHz are measured to form an impedance characteristic curve and a phase curve, as shown in FIG. 6. The first series resonant frequency f0 is then set to 16.5 MHz so that relationship (2) below is satisfied.
- 3f0>fe (2)
- In the plasma processing apparatus of this embodiment, the first series resonant frequency f0 is adjusted so that three times f0 is larger than the power frequency fe supplied from the
radiofrequency generator 1, as described above. In this manner, the overall radiofrequency electrical characteristics of the plasma chamber CN, which are not considered in the conventional process, can be optimized. Also, the operational stability is improved thereby, and it becomes possible to efficiently deliver power from theradiofrequency generator 1 to the plasma generation space between theplasma excitation electrode 4 and thesusceptor electrode 8 even when a radiofrequency voltage exceeding the conventionally used frequency, i.e., 13.56 MHz, is used. Moreover, when the same frequency as in the conventional process is supplied, the effective power consumed in the plasma space can be increased and the density of the generated plasma can be improved as compared to the conventional plasma processing apparatuses. As a result, the processing rate can be improved by increasing the plasma excitation frequency. In other words, the deposition rate can be improved in the plasma-enhanced CVD process or the like. - Because the power can be efficiently supplied to the plasma space, undesirable spreading of the plasma can be inhibited, and the uniformity in plasma processing in the planar direction of the
substrate 16 can be improved, thereby improving the planar-direction distribution of the layer thickness during the layer deposition. - When the radiofrequency power is supplied, the potential of the plasma can be reduced and damage due to ions can be prevented. As a consequence, the state of deposition, i.e., the layer characteristics such as isolation voltage, etching resistance, density of the deposited layer (hardness of the layer), or the like, can be improved during deposition processes such as plasma-enhanced CVD processes, sputtering processes, and the like.
- Note that the density of the deposited layer can be expressed as the etching resistance, which indicates the resistance against etching using a BHF solution.
- Furthermore, even when power having the same frequency as the conventional apparatus is supplied, the power can be supplied to the plasma space with an improved efficiency as compared to the conventional apparatus. Because of such an improvement in the power consumption efficiency, the power required for obtaining the same processing rate and the same layer characteristics as the conventional process can be reduced. Since the power consumption is reduced, the operating costs can also be reduced. If the power is supplied for the same period of time, then the production can be increased due to a reduced processing time. In all of these cases, power can be saved and the total emission of carbon dioxide due to power consumption can be reduced.
- The first series resonant frequency f0 can be measured in situ using an impedance meter AN. Accordingly, the performance validation and evaluation of the plasma processing apparatus can be completed in a shorter period of time. There is no need to stop the manufacturing line for several days or several weeks to wait for the results of the performance validation and evaluation carried out by inspecting the deposited substrate. Thus, the productivity of the manufacturing line can be improved.
- Since the first series resonant frequency f0 is mainly determined by the factors relating to the mechanical structure thereof, the first series resonant frequency f0 differs according to specific apparatuses. By setting the first series resonant frequency f0 of each apparatus to the above-described range, it becomes possible to provide each of the apparatuses with predetermined overall radiofrequency electrical characteristics and to achieve stable plasma generation. As a consequence, a plasma processing apparatus with an improved operational stability can be provided.
- Alternatively, as shown in FIG. 16, a fixture comprising a plurality of
conductive wires 101 a to 101 h, each having a matching impedance, and aprobe attachment 104, to which one end of each of the plurality ofconductive wires 101 a to 101 h is attached, may be used to measure the impedance characteristics of the plasma chamber CN. - The
probe attachment 104 is formed, for example, by shaping a 50 mm×10 mm×0.5 mm copper plate to have a clampingportion 106 and a ring portion. The diameter of the ring portion is determined so that the ring portion is attachable to the circumference of theprobe 105. Theconductive wires 101 a to 101 h are soldered to theprobe attachment 104 to be electrically connected thereto. - Terminals (attachments)102 a to 102 h, which are attachable to and detachable from a measuring object, are installed at the other ends of the
conductive wires 101 a to 101 h, respectively. - When this fixture is used, the
probe 105 is inserted into the ring portion of theprobe attachment 104, and theprobe 105 and theprobe attachment 104 are clamped by the clampingportion 106. Theconductive wires 101 a to 101 h are detachably screwed to the measuring object in a substantially symmetrical manner about a point through theterminals 102 a to 102 h, as shown in FIG. 17. - The
conductive wires 101 a to 101 h may be made of, for example, aluminum, copper, silver, or gold, or may be plated by silver or gold having a thickness of 50 μm or more. - The method for measuring impedance using this fixture is now explained with reference to FIG. 17.
- First, the
radiofrequency generator 1 and thematching box 2 are removed from the plasma processing apparatus. Theconductive line 110 of theprobe 105 of an impedance meter is then connected to thefeed plate 3. Theterminals 102 a to 102 h connected to theconductive wires 101 a to 101 h of the fixture of the impedance meter are screwed to thechassis 21 of the plasma processing apparatus in a symmetrical manner about thefeed plate 3 usingscrews 114. After the impedance meter is set as above, a measuring signal is fed to theconductive line 110 of the impedance meter so as to measure the impedance of the path from thefeed plate 3 of the plasma processing apparatus to thechassis 21 via theplasma space 60. - In this manner, a uniform current flows to the measuring object regardless of the size of the measuring object or the distance between two points to be measured. Also, by setting a residual impedance which does not affect the measurement of the impedance of the measuring object, the impedance measurement can be performed with precision.
- In this embodiment, the
substrate 16 is placed on thesusceptor electrode 8, and the first series resonant frequency f0 and the power frequency fe are set in relation to theplasma excitation electrode 4. However, it is possible to place thesubstrate 16 on theplasma excitation electrode 4 serving as a cathode. - Second Embodiment
- A plasma processing apparatus of a second embodiment will now be described with reference to FIG. 7.
- FIG. 7 is a cross-sectional view showing the outline of the structure of a plasma processing apparatus of a second embodiment.
- The plasma processing apparatus of the second embodiment is of a dual-frequency excitation type. The second embodiment differs from the first embodiment shown in FIGS.1 to 4 in that the power is supplied to a
susceptor electrode 8 side and that there is a measuringterminal 61. A difference also lies in the setting of the first series resonant frequency f0. The corresponding components are given the same reference numerals and symbols and the description thereof is omitted to avoid duplication. - In the plasma processing apparatus of this embodiment, the first series resonant frequency f0 is so set that 1.3 times the first series resonant frequency f0 of the plasma chamber (plasma processing room) CN is larger than the power frequency fe fed from the
radiofrequency generator 1 to the plasma chamber CN. - As shown in FIG. 7, in the plasma processing apparatus of this embodiment, a
susceptor shield 12 is disposed under thesusceptor electrode 8, and theshaft 13 and thesusceptor electrode 8 are electrically isolated from thesusceptor shield 12 by a gap between thesusceptor shield 12 and thesusceptor electrode 8, and byinsulators 12C provided around theshaft 13. Theinsulators 12C also serve to maintain a high vacuum in thechamber space 60. Thesusceptor electrode 8 and thesusceptor shield 12 are allowed to move upward and downward by abellows 11, thereby allowing adjustment of the distance between aplasma excitation electrode 4 and thesusceptor electrode 8. Thesusceptor electrode 8 is connected to asecond radiofrequency generator 27 via afeed plate 28 connected to the lower end of theshaft 13 and amatching circuit 25 housed inside a susceptor-electrode-side matching box 26. - The
feed plate 28 is covered by achassis 29 connected to the lower end of a supportingtube 12B of thesusceptor shield 12. Thechassis 29 is connected to thematching box 26 via a shielding line of afeed line 27A that is a coaxial cable so that thechassis 29 and thematching box 26 are grounded. In this manner, thesusceptor shield 12, thechassis 29, and thematching box 26 have the same DC potential. - Herein, the matching
circuit 25 for matching the impedance between thesecond radiofrequency generator 27 and thesusceptor electrode 8 comprises a tuningcoil 30 and atuning capacitor 31 connected in series between thesecond radiofrequency generator 27 and thefeed plate 28, and aload capacitor 32 connected in parallel to the tuningcoil 30 and the tuningcapacitor 31. One end of theload capacitor 32 is connected to thematching box 26 so as to make a circuit having substantially the same structure as that of thematching circuit 2A. Thematching box 26 is set to a ground potential via the shielding line of thefeed line 27A, thereby grounding one end of theload capacitor 32. As alternative configurations, a tuning coil may be connected to the tuningcoil 30 in series so as to form a circuit serving as a tuning coil, or a load capacitor may be connected to the load capacitor in parallel so as to form a circuit serving as a load capacitor. - The
feed plate 28 is identical to thefeed plate 3. Thefeed plate 28 is screwed to the terminal of the matchingcircuit 25 and to theshaft 13. - An impedance measuring terminal (resonant frequency measuring terminal)61 of the plasma chamber CN is provided at the output end position PR of the tuning
capacitor 24, which is a passive device at the final output stage among the passive devices of thematching circuit 2A. Note that the output end position PR is within the region of the plasma chamber CN of this embodiment in which the measurements are taken. Theimpedance measuring terminal 61 extends from the output end position PR, which defines the measured region, as in the first embodiment, by a conductor and lies outside thechassis 21. - In the plasma processing apparatus of this embodiment, a
substrate 16 is placed on thesusceptor electrode 8, radiofrequency voltage is applied to theplasma excitation electrode 4 and thesusceptor electrode 8 from afirst radiofrequency generator 1 and thesecond radiofrequency generator 27, respectively, while a reaction gas is fed into achamber space 60 through agas feeding tube 17 andshower holes 7 to generate a plasma, and plasma processing such as deposition or the like is performed on thesubstrate 16. During the process, a radiofrequency voltage of approximately 13.56 MHz or more, and more specifically, a radiofrequency voltage of 13.56 MHz, 27.12 MHz, 40.68 MHz, or the like, is supplied from thefirst radiofrequency generator 1. Either the same radiofrequency voltage as in thefirst radiofrequency generator 1 or a radiofrequency voltage of a different frequency, e.g., 1.6 MHz, may be supplied from thesecond radiofrequency generator 27. - The first series resonant frequency f0 of the plasma processing apparatus according to this embodiment is defined by measurement, as in the first embodiment. Specifically, the first series resonant frequency f0 of this embodiment is defined by measurement, as shown in FIGS. 8 and 9.
- FIG. 8 is an illustration for explaining the impedance characteristics of the plasma processing apparatus of this embodiment. FIG. 9 is an equivalent circuit of FIG. 8.
- The state of the plasma chamber as viewed from the
impedance measuring terminal 61 is the object of the measurement in this embodiment. In other words, as shown in FIG. 9, the measured region starts from theimpedance measuring terminal 61 and ends at the position at which thematching circuit 25 is separated. When measuring the impedance characteristic (radiofrequency characteristic), thematching circuit 2A connected to thefeed plate 3 in parallel at the output end position PR during plasma emission is removed from the plasma chamber CN, and thematching circuit 25 connected to thesusceptor electrode 8 during the plasma emission is removed from the plasma chamber CN. - The reason or depicting the
radiofrequency generators circuits - As shown by a broken line in FIG. 8, a
probe 105 of an impedance meter AN is connected to theimpedance measuring terminal 61 and to the earth position of the plasma chamber CN, achassis 21, for example. At this stage, the measuring frequency oscillated by the impedance meter AN is varied over the range of 1 to 100 MHz so as to measure the vector quantity (Z, θ) of the impedance of the above-described measured region of the plasma chamber CN. - Next, as shown in FIG. 10, both impedance Z (Ω) and phase θ (degree) are plotted on the ordinates of the graph having the measuring frequency f (MHz) as the abscissa. In the graph, the ordinate at the left side corresponds to impedance Z (Ω) and the ordinate at the right side corresponds to phase θ (degree). Referring to the impedance characteristic curve (shown by a solid line) and the phase curve (shown by a broken line) in FIG. 5, the first series resonant frequency f0 is defined as the lowest frequency among the frequencies assigned to the minima Zmin of the impedance, i.e., the frequency assigned to a phase θ of zero when the phase θ first goes from positive to negative while the measuring frequency f is increased.
- In the thus determined first series resonant frequency f0, the following electrical radiofrequency factors within the above-described measured region are taken into account, as shown in FIG. 8:
- Inductance Lf and resistance Rf of the
feed plate 3; - Plasma electrode capacitance Ce between the
plasma excitation electrode 4 and thesusceptor electrode 8; - Inductance LC and resistance RC of the supporting
tube 12B of thesusceptor shield 12; - Inductance LB and resistance RB of the
bellows 11; - Inductance LA and resistance RA of the
chamber wall 10; - Capacitance CA between the
gas feeding tube 17 and theplasma excitation electrode 4 via theinsulator 17 a; - Capacitance CB between the
plasma excitation electrode 4 and thechassis 21; and - Capacitance CC between the
plasma excitation electrode 4 and thechamber wall 10. - These electrical radiofrequency factors are arranged in the same manner as in the circuit for generating plasma using radiofrequency current so as to form an equivalent circuit shown in FIG. 9. In this equivalent circuit, the inductance Lf and resistance Rf of the
feed plate 3, the plasma electrode capacitance Ce between theplasma excitation electrode 4 and thesusceptor electrode 8, the inductance LC and resistance RC of the supportingtube 12B of thesusceptor shield 12, the inductance LB and resistance RB of thebellows 11, and the inductance LA and resistance RA of thechamber wall 10 are connected in series in that order. The resistance RA is grounded. The equivalent circuit further includes the capacitance CA, the capacitance CB, and the capacitance CC, connected in parallel between the resistance Rf and the plasma electrode capacitance Ce and each grounded at one end thereof. By determining the impedance characteristics of this equivalent circuit, the first series resonant frequency f0 of this embodiment can be defined. - It is arranged that the first series resonant frequency f0 is set so that 1.3 times the first series resonant frequency f0 is larger than the power frequency fe supplied from the
radio frequency generator 1. - Examples of methods for adjusting and setting the first series resonant frequency f0 are as follows:
- (1) Adjusting the shape and the length of the
feed plate 3; - (2) Adjusting the overlapping area of the
plasma excitation electrode 4 and thechamber wall 10; - (3) Increasing the thickness of the insulating material disposed between the
plasma excitation electrode 4 and thechamber wall 10; and - (4) Adjusting the
susceptor electrode 8 and thechamber wall 10, such as connecting them with a conductor. - For example, in the plasma processing apparatus of this embodiment, the power frequency fe is set to 40.68 MHz and the impedance Z (Ω) and the phase θ (deg) relative to the measuring frequency f (MHz) ranging from 1 to 100 MHz are measured to give an impedance characteristic curve and a phase curve, as shown in FIG. 10. The first series resonant frequency f0 is then adjusted to 42.5 MHz so that relationship (3) below is satisfied.
- 1.3f0>fe (3)
- The plasma processing apparatus of this embodiment has the same advantages as the first embodiment. Furthermore, in this embodiment, the
impedance measuring terminal 61 for the plasma chamber CN is connected to the output end position PR of thematching circuit 2A of the plasma chamber CN, thereby facilitating attachment of a probe when the impedance characteristic of the plasma chamber CN is measured. In this manner, the operation efficiency during the measurement of the first series resonant frequency f0 can be improved. - As shown in FIG. 7, the
impedance measuring terminal 61 of this embodiment penetrates through thematching box 2. Alternatively, theradiofrequency generator 1 and thematching box 2 may be configured to be removable from the plasma processing apparatus during the impedance measuring, without having theimpedance measuring terminal 61 penetrating thematching box 2. - Third Embodiment
- A plasma processing apparatus according to a third embodiment will now be described with reference to the drawings.
- FIG. 11 is a cross-sectional view illustrating the outline structure of the plasma processing apparatus of a third embodiment.
- The plasma processing apparatus of this embodiment is of a dual-frequency excitation type. The third embodiment differs from the second embodiment in the structure around the
impedance measuring terminal 61, and the setting of the first series resonant frequency f0 and a series resonance frequency f0′. The same components in the embodiments are given the same reference numerals and the explanation thereof is omitted. - In the plasma processing apparatus of the third embodiment, the first series resonant frequency f0 of a plasma chamber (plasma processing chamber) CN is set larger than three times the power frequency fe supplied from a
radiofrequency generator 1 to the plasma chamber CN. Meanwhile, the series resonant frequency f0′, defined by the capacitance Ce betweenelectrodes - As shown in FIG. 11, the plasma processing apparatus of this embodiment comprises switches for switching a
matching circuit 2A to/from an impedance measuring terminal (resonant frequency measuring terminal) 61, the switches being disposed in the vicinity of an output end position PR of thematching circuit 2A. More specifically, a switch SW1 disposed between the matchingcircuit 2A and thefeed plate 3, and a switch SW2 disposed between an impedance meter AN and thefeed plate 3, are provided. - The switches SW1 and SW2 serve to electrically disconnect a terminal of the
feed plate 3 from theimpedance measuring terminal 61 while securing the electrical connection between the terminal of thefeed plate 3 and the output end PR of thematching circuit 2A during plasma excitation. In contrast, during measurement of the resonant frequency of the plasma chamber CN, the switches SW1 and SW2 serve to secure the electrical connection between the terminal of thefeed plate 3 and theimpedance measuring terminal 61 while electrically disconnecting thefeed plate 3 from the output end PR of thematching circuit 2A. - The impedance characteristics (resonant frequency characteristics) when the switches SW1 and SW2 connect the
feed plate 3 and thematching circuit 2A, and the impedance characteristics (resonant frequency characteristics) when the switches SW1 and SW2 connect theimpedance measuring terminal 61 and thefeed plate 3, are set to be equal. In other words, the impedance Z1, in the vicinity of the switch SW1 and the impedance Z2 in the vicinity of the switch SW2 are set to be equal, as will be described below with reference to FIG. 11. - To be more specific, the resonant frequency characteristics measured at the position of the output end PR of the
matching circuit 2A when theswitches feed plate 3 from theimpedance measuring terminal 61 while securing the electrical connection between the terminal of thefeed plate 3 and the output end PR of thematching circuit 2A, and the resonant frequency characteristics measured at the impedance measuring terminal (resonant frequency measuring terminal) 61 when the switches SW1 and SW2 secure the electrical connection between the terminal of thefeed plate 3 and theimpedance measuring terminal 61 while electrically disconnecting thefeed plate 3 from the output end PR of thematching circuit 2A, are set to equal each other. - In other words, referring to FIG. 11, the impedance Z1 at the output end position PR side of the matching circuit, 2A, i.e., the impedance between the output end position PR and a branch point B which branches to the switch SW2, when the switch SW1 is closed to connect the
matching circuit 2A while opening the switch SW2, and the impedance Z2 at theimpedance measuring terminal 61 side, i.e., the impedance between theimpedance measuring terminal 61 and the branch point B which branches to the switch SW1, when the switch SW2 is closed to connect theimpedance measuring terminal 61 while opening the switch SW1, are set to equal each other. - As in the second embodiment shown in FIG. 8, a detachable probe of the impedance meter AN is connected to the
impedance measuring terminal 61. The detachable probe is connected to a grounded part of the plasma chamber CN, for example, achassis 21. - The first series resonant frequency f0 of the plasma processing apparatus according to this embodiment is determined by measuring impedance characteristics as in the second embodiment, and more specifically, as shown in FIGS. 11 and 12.
- FIG. 12 is a circuit configuration of an equivalent circuit for measuring the impedance characteristics of the plasma processing apparatus of this embodiment shown in FIG. 11.
- Having the switch SW1 closed and the switch SW2 opened, a
substrate 16 is placed on asusceptor electrode 8, and radiofrequency voltage is applied to aplasma excitation electrode 4 and asusceptor electrode 8 from afirst radiofrequency generator 1 and asecond radiofrequency generator 27, respectively, at the same time while supplying a reaction gas to achamber space 60 through agas feeding tube 17 andshower holes 7 so as to generate plasma. The substrate is plasma-treated, for example, and is subjected to deposition using this plasma. At this time, a frequency power of approximately 13.56 MHz or more, and more precisely, 13.56 MHz, 27.12 MHz, 40.68 MHz, or the like, is fed to theplasma excitation electrode 4 from thefirst radiofrequency generator 1. Thesecond radiofrequency generator 27 may supply either power having the same frequency as thefirst radiofrequency generator 1 or power of a different frequency, for example, approximately 1.6 MHz. - As for the measured region of the plasma chamber CN of this embodiment, the plasma chamber CN as viewed from the
impedance measuring terminal 61 is to be measured. Referring to FIG. 11, since the impedance Z1, in the vicinity of the switch SW1 and the impedance Z2 in the vicinity of the switch SW2 are set to equal each other, the thus determined measured region is the same as that viewed from the output end position PR. - In this manner, the
matching circuit 2A can be separated from the measured region simply using the switch SW1, as shown in FIG. 11, in contrast to the first and second embodiments which required the circuits to be mechanically detached in order to electrically disconnect thematching circuit 2A and exclude the same from the measured region during measurement of the impedance. Thus, this embodiment simplifies measurement of the impedance characteristics of the plasma chamber CN. - The measured region of the third embodiment includes the switch SW2, which is not included in the second embodiment. Such an arrangement is made because of the contribution of the switch SW1 to the impedance characteristics, i.e., because the switch SW1 is closed during the plasma generation. When the vicinity of the switch SW2 having impedance Z2, which is equal to impedance Z1 in the vicinity of the switch SW1, is included in the above-described measured region, the measured region of the plasma chamber CN as viewed from the
impedance measuring terminal 61 can be made identical to the configuration of the circuit during the actual plasma generation, thereby improving the accuracy of the impedance measurement. - The vector quantity (Z, θ) of the impedance in relation to the above-described measured region of the plasma chamber CN is determined using a measuring frequency oscillated by the impedance meter, the measuring frequency being varied over the range of 1 MHz to 150 MHz, as in the second embodiment shown in FIGS.7 to 9, while opening the switch SW1 and closing the switch SW2. It becomes possible to measure the impedance characteristics and to define the first series resonant frequency f0 simply by switching the switches SW1 and SW2 without having to remove the
matching circuit 2A from the plasma chamber CN or attach/detach the impedance-measuringprobe 105 of the second embodiment shown in FIG. 8. - Next, as shown in FIG. 13, the impedance Z (Ω) and the phase θ (deg) are plotted on the ordinates of a graph having the abscissa assigned to the measuring frequency f (MHz). In the graph, the ordinate at the left is assigned to the impedance Z (Ω) and the ordinate at the right is assigned to the phase θ (deg). The first series resonant frequency f0 is defined as the lowest frequency among the frequencies assigned to the minima Zmin of the impedance in the impedance characteristics curve and the phase curve, i.e., the frequency at a phase θ of zero when the phase θ first goes from negative to positive as the measuring frequency f is increased.
- In the thus determined first series resonant frequency f0, the following electrical radiofrequency factors within the above-described measured region are taken into account, as shown in FIG. 12:
- Inductance LSW and resistance RSW of the switch SW2;
- Inductance Lf and resistance Rf of the
feed plate 3; - Plasma electrode capacitance Ce between the
plasma excitation electrode 4 and thesusceptor electrode 8; - Capacitance CS between the
susceptor electrode 8 and asusceptor shield 12; - Inductance LC and resistance RC of a supporting
tube 12B of thesusceptor shield 12; - Inductance LB and resistance RB of a
bellows 11; - Inductance LA and resistance RA of a
chamber wall 10; - Capacitance CA between a
gas feeding tube 17 and theplasma excitation electrode 4 via aninsulator 17 a; - Capacitance CB between the
plasma excitation electrode 4 and thechassis 21; and - Capacitance CC between the
plasma excitation electrode 4 and thechamber wall 10. - These electrical radiofrequency factors are arranged in the same manner as in the circuit for generating plasma using radiofrequency current so as to form an equivalent circuit shown in FIG. 12. In this equivalent circuit, the inductance LSW and resistance RSW of the switch SW2, the inductance Lf and resistance Rf of the
feed plate 3, the plasma electrode capacitance Ce between theplasma excitation electrode 4 and thesusceptor electrode 8, the capacitance CS between thesusceptor electrode 8 and asusceptor shield 12, the inductance LC and resistance RC of a supportingtube 12B of thesusceptor shield 12, the inductance LB and resistance RB of thebellows 11, and the inductance LA and resistance RA of achamber wall 10, are connected in series in that order, while having the resistance RA grounded. The equivalent circuit further comprises capacitance CA, capacitance CB, and capacitance CC connected in parallel between the resistance Rf and the plasma electrode capacitance Ce, each having one end thereof grounded. By measuring the impedance characteristics of this equivalent circuit, the first series resonant frequency f0 of this embodiment can be defined. - The thus defined first series resonant frequency f0 is set larger than three times the power frequency fe supplied from the
radiofrequency generator 1. - Examples of methods for setting the first series resonant frequency f0 are as follows:
- (1) Adjusting the length (shape) of the
feed plate 3; - (2) Reducing the overlapping area of the
plasma excitation electrode 4 and thechamber wall 10; - (3) Increasing the thickness of the insulating material provided between the
plasma excitation electrode 4 and thechamber wall 10; and - (4) Short-circuiting the
susceptor shield 12 and thechamber wall 10 using a conductor. - For example, in the plasma processing apparatus of this embodiment, the power frequency fe is set to 40.68 MHz and the impedance Z (Ω) and the phase θ (deg) relative to the measurement frequency f (MHz) ranging from 0 to 150 MHz are measured to give an impedance characteristic curve and a phase curve, as shown in FIG. 6. The first series resonant frequency f0 is then set to 123.78 MHz so that relationship (4) below is satisfied.
- f0>3fe (4)
- In this embodiment, a series resonant frequency f0′, defined by the plasma electrode capacitance Ce between the
plasma excitation electrode 4 and thesusceptor electrode 8, is set larger than three times the power frequency fe described above so that relationship (5) below is satisfied. - f0′>3fe (5)
- The series resonant frequency f0′ is defined from the impedance characteristic between the
plasma excitation electrode 4 and thesusceptor electrode 8. The impedance characteristic thereof is measured as in determining the first series resonant frequency f0 described above. - To be more specific, the impedance characteristic is measured at one end of the
susceptor electrode 8 having the other end grounded, and the least significant frequency among the frequencies assigned to the minima Z is defined as the series resonant frequency f0′. - The series resonant frequency f0′ is radiofrequency electrical characteristic dependent on the mechanical shape of the
plasma excitation electrode 4 and thesusceptor electrode 8, and is in proportion to the reciprocal of the square root of the plasma electrode capacitance Ce between theplasma excitation electrode 4 and thesusceptor electrode 8. - By using the series resonant frequency f0′, the frequency characteristic of the
plasma excitation electrode 4 and thesusceptor electrode 8, which directly generate a plasma, can be controlled. Consequently, power can be efficiently fed to the plasma emission space, thereby improving the power consumption efficiency and the process efficiency. -
- Wherein d represents the distance between the plasma excitation electrode (plasma excitation electrode)4 and the susceptor electrode (counter electrode) 8, and δ represents the total of the distance between the
plasma excitation electrode 4 and the generated plasma and the distance between thesusceptor electrode 8 and the generated plasma, as will be described in detail below. - FIG. 14 is a diagram showing a state of the space between two electrodes when a plasma is being generated.
- As shown in FIG. 14, the
plasma excitation electrode 4 and thesusceptor electrode 8 are each of a parallel plate type, and the distance therebetween is represented by d. The total of the distance between theplasma excitation electrode 4 and the generated plasma, and the distance between thesusceptor electrode 8 and the generated plasma, is represented by δ. In other words, distance δa of the plasma non-emitting portion between theplasma excitation electrode 4 and a plasma emitting region P, which can be visually recognized during plasma emission, and distance δb of the plasma non-emitting portion between the plasma emitting region P and thesusceptor electrode 8 satisfy relationship (6) below. - δa+δb=δ (6)
- Herein, a model capacitance C0″ between the
electrodes electrodes electrodes - The plasma emitting region P between the
parallel plate electrodes electrodes parallel plate electrodes electrodes - C0∝1/d
- C0″∝1/δ
- ∴C0″∝d/δ·C0 (7)
-
- The relationship between the series resonant frequency f0″ between the
electrodes - f0″>fe (9)
- Using relationship (8), relationship (9) can be rewritten as relationship (1) described above.
- When the series resonant frequency f0″ and the power frequency fe satisfy relationship (1), the relationship between the value of series resonant frequency f0″ defined from the model capacitance C0″ during plasma emission and the value of the series resonant frequency f0′ defined from the capacitance between the
electrodes electrodes - The plasma processing apparatus of this embodiment has the following advantages in addition to the advantages the first embodiment. Because the switches SW1 and SW2 are provided while an impedance meter is detachably attached to the
impedance measuring terminal 61, and the impedances Z1 and Z2 thereof are set equal to each other, the measurement of the impedance characteristic and determining the first series resonant frequency f0 can be readily performed by simply switching the switches SW1 and SW2 without having to separate thematching circuit 2A from the plasma chamber CN. Moreover, because the impedance determined at the impedance meter AN connected to theimpedance measuring terminal 61 can be considered equal to the impedance measured at the output position PR of the final output stage of thematching circuit 2A, neither correction nor reduction is necessary to yield the first series resonant frequency f0. Thus, the efficiency of operation can be improved, and the measurement of the first series resonant frequency f0 can be accurately carried out. - Moreover, by setting the series resonant frequency f0′ and the power frequency fe, the frequency characteristic of the above-described
electrodes - In this embodiment, two switches, namely, the switches SW1 and SW2, are provided. Alternatively, a single switch may be used to switch the connections as long as the impedance between the branching point to the output end position PR and the impedance between the branching point to the probe are set to equal each other.
- Furthermore, in each of the above-described first to third embodiments, the power frequency fe and the first series resonant frequency f0 are set in relation to the
plasma excitation electrode 4. Alternatively, they may be set in relation to thesusceptor electrode 8. In such a case, an output end position PR′ of the matchingcircuit 25 may be set to define the region in which the impedance is measured, as shown in FIGS. 7 and 11. When the impedance characteristic of the plasma chamber CN is measured from thesusceptor electrode 8 side, the matchingcircuit 25 is removed from the plasma chamber CN at the output end position PR′, which serves as a measuring point. - Moreover, in addition to the plasma processing apparatus using the parallel
plate type electrodes - Furthermore, the structure in which the
feed panel 3 and theplasma excitation electrode 4 are combined or the structure in which thematching circuit 2A is directly connected to the electrode may also be employed. In such a case, the above-described measured region starts from the output end PR of thematching circuit 2A - Also, target materials may be provided instead of the
electrodes - Next, an embodiment of a performance validation system of the plasma processing apparatus according to the present invention will be described with reference to the drawings. Hereinafter, the person who distributes and maintains the plasma processing apparatus is referred to as a “maintenance engineer”.
- FIG. 20 is a diagram illustrating the configuration of a performance validation system of the plasma processing apparatus according to the present invention.
- Referring to FIG. 20, the performance validation system comprises a customer's terminal (client terminal) C1, an engineer's terminal (client terminal) C2, a server computer (hereinafter simply referred to as “server”) S which functions as operational performance information providing means, a database computer (hereinafter simply referred to as “database”) D which stores information, and a public line N. The customer's terminal C1 and the engineer's terminal C2, the server S, and the database D are linked to one another via the public line N.
- The terminals C1 and C2 have a function to communicate with the server S using a commonly-used internet communication protocol, such as TCP/IP or the like. The customer's terminal C1 serves as a customer-side information terminal for validating, via the public line N, the state of the performance of the plasma chamber CN that the customer purchased from the maintenance engineer. The customer's terminal C1 also has a function to access an information web page such as a “plasma chamber CN performance information page” stored in the server S. The engineer's terminal C2 allows the maintenance engineer to upload “first series resonant frequency f0 information”, which partially constitutes the “performance information”, and to receive e-mails sent from the customer through the customer's terminal
- Communication with the server S is achieved through a modem when the public line N is an analog line or through a dedicated terminal adapter or the like when the public line N is a digital line such as an integrated services digital network (ISDN).
- The server S is a computer that provides performance information. The server S transmits the performance information to the customer's terminal C1 using an internet communication protocol upon request from the customer's terminal C1 requesting the display of the information. Herein, each of the customers who purchased the plasma chambers receives an “access password” for accessing the performance information when the plasma processing apparatus is delivered to the customer from the maintenance engineer. The password is required when the customer wishes to access operation and maintenance information, which is part of the performance information, and the server S sends the operation and maintenance information to the customer's terminal C1 only when a registered access password is provided.
- The above-described “performance information”, details of which will be described in a later section, comprises information regarding models of the plasma processing apparatus available from the maintenance engineer, information regarding quality/performance of each model in the form of specifications, information regarding parameters indicative of quality/performance of specific apparatuses delivered to customers, and information regarding parameters and maintenance history.
- The latter two types of information among the information described above, i.e., the information regarding quality/performance of specific apparatuses and the information regarding parameters and maintenance history, are accessible only from the customers provided with access passwords.
- The performance information described above is provided in the form of “operation and maintenance information” and “standard performance information”. The operation and maintenance information is a type of information provided from the maintenance engineer or the customer to the server S to indicate the actual state of operation and maintenance. The standard performance information is a type of information stored in the database D and serves as a catalog accessible by potential customers. The “standard performance information” is an objective description regarding the performance of the plasma processing carried out in the plasma chamber CN and allows prediction of the deposition state when deposition processes such as plasma-enhanced CVD and sputtering processes are concerned.
- In this embodiment, all the information included in the standard performance information is stored in the database D.
- Upon the request from the customer's terminal C1 requesting display of “performance information”, the server S retrieves the necessary “standard performance information” from the database D and sends the information to the customer's terminal C1 of the customer in the form of a performance information page. When a customer sends a request to access the “performance information” along with the access password of the customer, the server S retrieves the necessary standard performance information from the database D as described above, constructs the performance information by combining the thus retrieved information and the operation and maintenance information provided from the maintenance engineer through the engineer's terminal C2, and sends the performance information page containing this information to the customer's terminal C1 of the customer.
- The database D stores the “standard performance information”, which is part of the “performance information”, according to the models of the plasma chambers CN, reads out the “standard performance information” in response to a search request sent from the server S, and transfers the retrieved information to the server S. Although only one server S is illustrated in FIG. 20, a plurality of servers are provided in this embodiment. In this respect, it is useful to store general purpose “standard performance information” in the database D instead of these servers in order for the information to be shared among the plurality of servers managed by maintenance engineers from a plurality of locations.
- Next, an operation of the thus-configured performance validation system of the plasma chamber CN will be explained in detail with reference to the flowchart shown in FIG. 21. The flowchart illustrates the process of providing the “performance information” at the server S.
- Generally, the maintenance engineer presents, as a reference for purchase, the “standard performance information” (among the “performance information”) of the model of plasma chamber CN which the maintenance engineer is attempting to sell to the customer. The customer is able to understand the performance of the plasma chamber CN, and possible plasma processes using the plasma chamber CN, through this “standard performance information”.
- Also, the maintenance engineer presents, to the customer who purchased and received the plasma chamber CN, the “operation and maintenance information” of the purchased apparatus (among the “performance information”) as operating parameters as well as the “standard performance information,” which serves as the reference during the operation. The customer, i.e., the user of the plasma chamber CN, may validate the operation of his/her plasma chamber CN by comparing the “standard performance information” and the “operation and maintenance information” so as to determine whether it is necessary to perform maintenance and to be informed of the state of the plasma processing.
- For example, the customer who is considering purchasing a new plasma chamber CN from the maintenance engineer may access the server S to easily check the “standard performance information” of the plasma chamber CN the customer is intending to purchase in the following manner.
- When the customer accesses the server S, a request for access is first sent from the customer's terminal C1 to the server S based on an IP address of the server S set in advance.
- Upon receiving the request for access (Step S1), the server S transfers a catalog page CP to the customer's terminal C1 (Step S2).
- FIG. 22 shows an example of the catalog page (main page) CP sent from the server S to the customer's terminal C1 through the steps described above. The catalog page CP comprises model selection buttons K1 to K4 for displaying the “standard performance information” (among the “performance information”) according to models available from the maintenance engineer, and a user button K5 for requesting the display of a customer page exclusive to the customer to whom the maintenance engineer delivered the plasma chamber CN.
- For example, a customer may select one of the model selection buttons K1 to K4 by a pointing device (for example, a mouse) of the customer's terminal C1 so as to specify which model of the plasma chamber CN the customer desires to obtain the information about. Such a selection is regarded as the request for accessing the “standard performance information” (among the “performance information”), and a request to that effect is sent to the server S.
- Upon receipt of the request (Step S3), the server S sends the customer's terminal C1 a subpage containing the requested information regarding the selected model. That is, when display of “standard performance information” is requested specifying a model (A), the server S retrieves data such as “vacuum performance”, “gas supply/discharge property”, “temperature performance”, “electrical performance of the plasma processing chamber”, and the like from the database D and sends the customer's terminal C1 a specifications page CP1 (shown in FIG. 23) containing this data.
- As shown in FIG. 23, the specifications page CP1 comprises an apparatus model section K6 indicating the selected model of the apparatus, a vacuum performance section K7, a gas supply/discharge performance section K8, a temperature performance section K9, and an electrical performance section K10 indicating the electrical performance of the plasma processing chamber. These constitute the “standard performance information” of the selected model, and each contains the following descriptions.
- The vacuum performance section K7 contains
- ultimate degree of vacuum: 1×10−4 Pa or less; and
- operational pressure: 30 to 300 Pa.
- The a gas supply/discharge performance section K8 contains p1 maximum gas flow rates:
SiH 4100 SCCM, NH3 500 SCCM, N2 2,000 SCCM; and - discharge property: 20 Pa or less in a flow of 500 SCCM.
- The temperature performance section K9 contains
- heater temperature: 200 to 350±10° C.; and
- chamber temperature: 60 to 80±2.0° C.
- Herein, the SCCM (standard cubic centimeters per minute) values represent the corrected gas flow rate at standard conditions (0° C. and 1,013 hPa) and the unit thereof is cm3/min.
- In the electrical performance section K10, a value of the first series resonant frequency f0 described in the first to third embodiment above and the relationship between the setting range of the first series resonant frequency f0 and the power frequency fe are described. In addition to these, values such as resistance Re and reactance Xe of the plasma chamber CN at the power frequency fe, plasma capacitance C0 between the
plasma excitation electrode 4 and thesusceptor electrode 8, loss capacitance CX between theplasma excitation electrode 4 and each of the components which serve as ground potential of the plasma chamber, and the like are included in the description. Furthermore, in the specification page CP1, a performance guarantee statement such as “we guarantee that each of the parameters is within the range of settings described in this page at the time of delivery of the plasma chamber” is included. - In this manner, the overall radiofrequency electrical characteristics of the plasma chamber CN can be presented to a potential purchaser as a novel reference which has never been considered before. The performance information can be printed out at the customer's terminal C1 or the engineer's terminal C2 to make a hard copy thereof so that the information can be presented in the form of a catalog or specifications describing the performance information containing the above-described detailed information. When settings of the first series resonant frequency f0, resistance Re, reactance Xe, capacitances C0, CX, and the like, and the performance guarantee statement are presented to a potential purchaser through a terminal such as customer's terminal C1, through a catalog, or through a specification, the potential purchaser may judge the performance of the plasma chamber just as if he/she is examining electrical components and may then purchase the plasma chamber CN from the maintenance engineer based on that judgement.
- After the server S completes the transmission of the above-described subpage to the customer's terminal C1, the server S waits for the request for the display of another subpage if a log-off request from the customer's terminal C1 is not received (Step S5). If a log-off request from the customer's terminal C1 is received by the server S, the server S terminates the interaction with the customer's terminal C1.
- The customer who purchased and obtained the plasma chamber CN from the maintenance engineer can easily check the “performance information” of the specific plasma chamber that the customer purchased by accessing the server as below.
- When the customer and the maintenance engineer exchange a sales contract, a customer ID, which is assigned to the individual customer and corresponds to a model number of the purchased plasma chamber CN, and a “customer password” (access password) for accessing the “operation and maintenance information” of that plasma chamber CN are given to the individual customer by the maintenance engineer. The server S sends the “operation and maintenance information” to the customer's terminal C1 only when the registered access password is provided.
- A customer who wishes to access the information selects the user button K5 in the above-described catalog page CP and sends the request for the display of a customer page to the server S.
- Upon receiving the request for the display (Step S3-B), the server S sends a subpage prompting the customer to input his/her “access password” (Step S6). FIG. 24 is an illustration of a customer page CP2. The customer page CP2 comprises a customer ID input field K11 and a password input field K12.
- The customer page CP2 prompting the customer to input is displayed at the customer's terminal C1. In response to the prompt, the customer enters the “access password” and the “customer ID”, which are provided from the maintenance engineer, through the customer's terminal C1 so as to allow the server S to identify the specific plasma chamber CN.
- At this stage, the customer enters the customer ID into the customer ID input field K11 and the access password into the password input field K12. The server S sends the “operation and maintenance information” subpage previously associated to that “access password” to the customer's terminal C1 (Step S9), only when the server S receives the registered “customer ID” and the “access password” from the customer's terminal C1 (Step S7).
- In other words, the “operation and maintenance information” is accessible only by the specific customer who exchanged the sales contract for the above-described plasma chamber CN, i.e., who is in possession of the registered “access password”. A third party using the server S cannot access the “operation and maintenance information”. Although the maintenance engineer often exchanges sales contracts with a plurality of customers simultaneously and delivers a plurality of plasma chambers CN for these customers simultaneously, each of the customers is provided with an “access password” unique to the customer and the plasma chamber CN, and is capable of individually accessing the “operation and maintenance information” associated to the “access password” assigned to that customer.
- Thus, it becomes possible to securely prevent confidential information regarding the purchase of the plasma chamber from being made available to other customers. Furthermore, each of the plasma chambers can be individually identified even when a plurality of plasma chambers CN are delivered at the same time. If the server S does not receive a registered “access password” (Step S7), a message refusing the access and prompting the customer to re-enter the “access password” is sent to the customer's terminal C1 (Step S8). If the customer erroneously entered the “access password”, the customer may take this opportunity to re-enter a legitimate password to access the “operation and maintenance information”.
- When the ID and the password are verified (Step S7), the server S retrieves data corresponding to the information requested from the database D and sends it to the customer's terminal C1 in the form of a subpage. That is, when the server S receives a request from the customer's terminal C1 requesting display of the “standard performance information” and the “operation and maintenance information” of the specific plasma chamber CN identified by the customer ID, data such as “vacuum performance”, “gas supply/discharge performance”, “electric performance of the plasma processing chamber”, and the like are retrieved from the database D by specifying the apparatus model, and a specification page (subpage) CP3 containing this data is sent to the customer's terminal C1 (Step S9).
- FIG. 25 is an illustration of a maintenance history page (subpage)
CP 3 containing “operation and maintenance information”, which is sent from the server S to the customer's terminal C1. As shown in FIG. 25, the maintenance history page CP3 comprises a lot number section K13 indicating the serial number of the apparatus purchased, the vacuum performance section K7, the gas supply/discharge performance section K8, the temperature performance section K9, the electrical performance section K10, a vacuum performance maintenance section K14, a gas supply/discharge performance maintenance section K15, a temperature performance maintenance section K16, and an electrical property maintenance section K17. These constitute the “standard performance information” and the “operation and maintenance information” of the specific plasma chamber that is purchased. - An example of the description contained in the vacuum performance maintenance section K14 is as follows:
- ultimate degree of vacuum: 1.3 ×10−5 Pa or less;
- operational pressure: 200 Pa.
- An example of the description contained in the gas supply/discharge performance maintenance section K15 is as follows:
- gas flow rates:
SiH4 40 SCCM, NH3 160 SCCM, N2 600 SCCM; and - An example of the description contained in the temperature performance maintenance section K16 is as follows:
- heater temperature: 302.3±4.9° C.; and
- chamber temperature: 80.1±2.1° C.
- In the electrical performance maintenance section K17, the measured value of the first series resonant frequency f0 and the relationship with the power frequency fe are described. The electrical property maintenance section K17 further includes readings of the resistance Re and reactance Xe of the plasma chamber CN at a power frequency fe, the plasma capacitance C0 between the
plasma excitation electrode 4 and thesusceptor electrode 8, the loss capacitance CX between theplasma excitation electrode 4, and each of the portions which serve as the ground potential of the plasma chamber. - Each of the sections K14 to K17 of the maintenance history keeps the actual readings of these parameters and the date they are measured. The maintenance engineer or the customer regularly and sequentially uploads, to the server S, the “operation and maintenance information” of the individual plasma chambers according to the amount of time elapsed since the delivery of the chamber. Upon receiving the “operation and maintenance information”, the server S sequentially registers the data. The day the information is uploaded to the server S is defined as the “registration date”.
- The server S also retrieves the “performance information” including such data as “vacuum performance”, “gas supply/discharge performance”, “temperature performance”, “electrical performance of the plasma processing chamber”, and the like from the database D, and combines the retrieved information with the “operation and maintenance information” so as to make the maintenance history page CP3. In this manner, the customer can browse the “operation and maintenance information” and the “standard performance information” at the same time and compare the “operation standard information” which serves as the reference during use and the “operation and maintenance information” which serves as parameters indicating the actual operational state. In this manner the customer better understands the present state of the plasma process, can readily validate the operation of the plasma chamber CN, and can determine whether maintenance is necessary.
- If a log-off request from the customer's terminal C1 is not received by the server S after the completion of the transmission of the above-described subpage CP3 to the customer's terminal C1, the server S sends the customer's terminal C1 a message refusing the connection (Step S8) and prompting the customer to re-enter the “access password” or waits for the next request for display of another subpage (Step S3). If the server S receives a log-off request from the customer's terminal C1, then the server terminates the interaction with the customer's terminal C1.
- The performance validation system of the plasma chamber CN according to this embodiment comprises: a customer-side information terminal requesting, via a public line, access to performance information indicating an operational performance state of the previously described plasma chamber CN of the present invention which the customer purchased from a maintenance engineer; an engineer-side information terminal which allows the engineer to upload the performance information; and performance information providing means for providing the performance information uploaded at the engineer-side information terminal to the customer-side information terminal in response to a request from the customer-side information terminal. Because the performance information includes information regarding first series resonant frequency f0, the standard performance information, and the operation and maintenance information of the plasma chamber CN, and is presentable to customers as a catalog or specification when outputted through public lines and information terminals, it becomes possible to provide the customer with information necessary for making decisions to purchase the plasma chamber CN or to readily present the customer who purchased the plasma chamber CN with the information regarding operational performances and maintenance information of the purchased plasma chamber.
- Moreover, because the performance information includes the first series resonant frequency f0 as a performance parameter, the customer can estimate the performance of the plasma chamber CN, thus allowing him/her to make proper decisions at the time of purchase. Furthermore, the performance information can be output as a catalog or a specifications.
- In the following examples, the first series resonant frequency f0 was varied so as to examine changes in layer characteristics during the deposition process.
- The plasma processing apparatus used was of a dual-frequency excitation type. The plasma processing apparatus had radiofrequency electrical characteristics identical to those of the equivalent circuit shown in FIG. 15. The inductance LX was a combination of the inductance LC of the
shaft 13, the inductance LB of thebellows 11, and the inductance LA of thechamber wall 10 shown in FIG. 12. The resistance RS was a combination of the resistance RC of theshaft 13, the resistance RB of thebellows 11, and the resistance RA of thechamber wall 10 shown in FIG. 12. The capacitance CX was a combination of the capacitance CA between thegas feeding tube 17 and theplasma excitation electrode 4 via theinsulator 17 a, the capacitance CB between theplasma excitation electrode 4 and thechassis 21, and the capacitance CC between theplasma excitation electrode 4 and thechamber wall 10 shown in FIG. 12. - In Comparative Example1, the power frequency fe was set to 40.68 MHz and the first series resonant frequency f0 was set to 11.63 MHz. Each of the factors constituting the equivalent circuit shown in FIG. 12, namely, the inductance Lf and the resistance Rf of the
feed plate 3, the plasma electrode capacitance Ce between theplasma excitation electrode 4 and thesusceptor electrode 8, the capacitance CS between thesusceptor electrode 8 and the susceptor shield 12 (earth), the inductance LS and the resistance RS of theshaft 13, thebellows 11, and thechamber wall 10, and the capacitance CX between theplasma excitation electrode 4 and the earth, were actually measured. The results are shown in Table 1. - The length of the
feed plate 3 of the plasma processing apparatus of Comparative Example 1 was changed so as to set the first series resonant frequency f0 to 13.82 MHz, satisfying the relationship 3f0>fe. - The
feed plate 3 was further changed from Example 1, and the overlapping area of thesusceptor electrode 8 and thechamber wall 10 was changed so as to set the first series resonant frequency f0 to 30.01 MHz, satisfying the relationship 3f0>f e. - The thickness of the insulator between the
susceptor electrode 8 and thechamber wall 10 was increased as compared to Example 2 so as to set the first series resonant frequency f0 to 33.57 MHz, satisfying the relationship 1.3f0 >fe. - The
feed plate 3 was removed from the plasma processing apparatus of Example 3, the tuningcapacitor 24 of thematching circuit 2A was directly connected to thesusceptor electrode 8, and theshield supporting plate 12A of thesusceptor shield 12 and thechamber wall 10 were short-circuited so as to set the first series resonant frequency f0 to 123.78 MHz, satisfying the relationship f0>3fe. - It is to be noted that in all Examples, the power frequency fe was set to 40.68 MHz. The results are shown in Table 1.
TABLE 1 Comparative Example Example 1 Example 2 Example 3 Example 4 First series resonant 11.63 13.82 30.01 33.57 123.78 frequency f0 (MHz) Inductance Lf (nH) of the 184 130 92 92 2 feed plate 3Resistance Rf (Ω) of the 4 3 3 3 1 feed plate 3Capacitance Ce (pF) 37 37 37 37 37 between electrodes Capacitance Cs (pF) 2250 2250 2250 2250 2250 between the susceptor electrode 8 and earth Inductance Ls (nH) of the 268 268 268 268 268 chamber wall, etc. Resistance Rs (Ω) of the 2 2 2 2 1 chamber wall, etc. Capacitance Cs (pF) 980 980 250 180 180 between the plasma excitation electrode 4 and earth - In order to evaluate the results of Examples 1-4 and the Comparative Example, a SiNX layer was deposited at 800 W and 400 W. The SiNX layers were evaluated as follows.
- (1) Deposition rate and planar uniformity
- The process for evaluating deposition rate and planar uniformity included the following:
- Step 1: Depositing a SiNX layer on a glass substrate by plasma-enhanced CVD method;
- Step 2: Patterning a resist layer by photolithography;
- Step 3: Dry-etching the SiNX layer using SF6 and O2;
- Step 4: Separating the resist layer by ashing using O2;
- Step 5: Measuring step differences in the layer thickness using a displacement meter;
- Step 6: Calculating deposition rate from the deposition time and the layer thickness; and
- Step 7: Measuring the planar uniformity at 16 points on a 6-inch substrate surface.
- (2) BHF etching rate
- The process for evaluating the etching rates included the following:
- Steps 1 and 2: Same as the above Step 3: Immersing the substrate in a BHF solution (HF:NH4F=1:10) for one minute;
- Step 4: Rinsing the substrate with deionized water, drying the substrate, and separating the resist layer using a mixture of sulfuric acid and hydrogen peroxide (H2SO4+H 2O2);
- Step 5: Measuring the step differences as in
Step 5 above; and - Step 6: Calculating the etching rate from the immersion time and the step differences.
- (3) Isolation voltage
- The process for evaluating the isolation voltage included the following:
- Step 1: Depositing a chromium layer on a glass substrate by sputtering and patterning the chromium layer to make a lower electrode;
- Step 2: Depositing a SiNX layer by a plasma-enhanced CVD method;
- Step 3: Forming an upper electrode by the same process as in
Step 1; - Step 4: Forming a contact hole for the lower electrode;
- Step 5: Probing the upper and the lower electrodes to measure the current-voltage characteristic (I-V characteristic) by applying a voltage of approximately 200 V or less; and
- Step 6: Defining the isolation voltage as the voltage V at 100 pA corresponding 1 μA/cm2 in a 100 μm square electrode.
- These results are shown in Table 2.
TABLE 2 Comparative Example 1 Example 1 Example 2 Example 3 Example 4 Power output 800 800 800 800 400 Deposition rate (nm/min) 30-100 100-450 100-450 100-550 100-550 max-min Planar uniformity (%) >±10 ˜±10 ˜±10 ±5 ±5 BHF etching rate >200 ˜200 ˜200 ˜50 ˜50 (nm/min) Isolation voltage ˜4 ˜7 ˜7 ˜9 ˜9 - As is apparent from these results, when the relationship 3f0>fe was satisfied, the deposition rate and the isolation voltage were improved. When the relationship 1.3f0>fe was satisfied, not only the deposition rate and the isolation voltage, but also the planar uniformity and the BHF etching rate were improved. When the relationship f0>3f3 was satisfied, the same layer characteristics were achieved at a power output of 400 W.
- It can be concluded from the above that the performance of the plasma processing apparatus was improved by setting the first series resonant frequency f0 .
- Fourth Embodiment
- In accordance with a fourth embodiment of the present invention, a plasma processing apparatus, and a performance validation system and an inspection method thereof will now be described with reference to the drawings.
- FIG. 26 illustrates an outline configuration of a
plasma processing apparatus 71 according to the fourth embodiment that includes a plurality of processing chamber units suitable for consecutive processing, for example, from depositing a polysilicon film as a semiconductor active film to depositing a gate insulating film of top-gate TFTs. - In this
plasma processing apparatus 71, five processing chamber units, oneloading chamber 73, and oneunloading chamber 74 are continuously arranged around a substantiallyheptagonal transfer chamber 72. The five processing chamber units are plasma processing chamber units (plasma chambers) 75, 76, and 77, i.e., afirst deposition chamber 75 for depositing an amorphous silicon film, asecond deposition chamber 76 for depositing a silicon oxide film, and athird deposition chamber 77 for depositing a silicon nitride film; alaser annealing chamber 78 for annealing a processed substrate after deposition, and anannealing chamber 79 for performing a heat treatment of the processed substrate. - The first, second, and
third deposition chambers plasma chambers relationship 10A, between the maximum frequency Amax and the minimum frequency Amin, is set to be less than 0.1: - (Amax−Amin)/(Amax+Amin) (10A)
- The plasma processing chamber units (plasma chambers) according to this embodiment have the same cross-sectional configuration as that of the first embodiment shown in FIGS. 1 and 2, and the description thereof is therefore omitted.
- The configuration of the
first deposition chamber 75 will be described as an example. - The definition and measuring method (see FIGS.3 to 5) of the first series resonant frequency f0 as a radiofrequency characteristic A of the
first deposition chamber 75 are also the same as those in the first embodiment. - In the
first deposition chamber 75, a frequency three times the first series resonant frequency f0 is set to be larger than the power frequency fe thatis supplied from aradiofrequency generator 1. - With reference to FIG. 3, examples of methods for setting the first series resonant frequency f0 are as follows:
- (1) Adjusting the length of the
feed plate 3; - (2) Adjusting the overlap area of the
plasma excitation electrode 4 and thechamber wall 10; - (3) Adjusting the insulating material between the
plasma excitation electrode 4 and thechamber wall 10; and - (4) Connecting a conductor between the
susceptor electrode 8 and thechamber wall 10. - In the
first deposition chamber 75 of this embodiment, the power frequency fe is set to be 40.68 MHz, and the impedance Z (Ω) and the phase θ (deg) are measured for the measurement frequency f (MHz) in the range of 0 to 100 MHz to depict an impedance characteristic curve and a phase curve, as shown in FIG. 6. The first series resonant frequency f0 is then set to be 16.5 MHz so as to satisfy relationship (2): - 3f0>fe (2)
- In the
plasma processing apparatus 71 of this embodiment, thesecond deposition chamber 76 and thethird deposition chamber 77 have substantially the same structure as that of thefirst deposition chamber 75. The first series resonant frequency f0 as a radiofrequency characteristic A is also set for each of thesecond deposition chamber 76 and thethird deposition chamber 77, as in thefirst deposition chamber 75. More specifically, in each of thesedeposition chambers 75 to 77, the first series resonant frequency f0 is measured while the power frequency fe is set to be 40.68 MHz. - It is thought that the first series resonant frequency f0 is a radiofrequency electrical characteristic which is determined by many structural factors and which is different in each apparatus.
- Among the first series resonant frequency f075 measured for the
first deposition chamber 75, the first series resonant frequency f076 measured for thesecond deposition chamber 76, and the first series resonant frequency f077 measured for thethird deposition chamber 77, a variation, defined by relationship (10), between the maximum frequency f0max and the minimum frequency f0min is set to be less than 0.1: - (f0max−f0min)/(f0max+ 0min) (10)
- The variation of the first series resonant frequency f0 may also be determined by methods (1) to (4) described above.
- In the deposition of the amorphous silicon film, the silicon oxide film, and the silicon nitride film in the
chambers substrate 16 to be treated is placed on asusceptor electrode 8. A radiofrequency voltage is applied to both aradiofrequency electrode 4 and thesusceptor electrode 8 from aradiofrequency generator 1, while a reactive gas is supplied from agas inlet pipe 17 into achamber space 60 through ashower plate 6 to generate a plasma. The target film is thereby formed on thesubstrate 16. - With reference to FIG. 27, the
laser annealing chamber 78 is provided with alaser light source 81 on theupper wall 80 and astage 82 for placing thesubstrate 16 to be treated on the bottom wall of the chamber. Thestage 82 is horizontally movable in the orthogonal X and Y directions. Spot laser light 83 (shown by chain lines) is emitted from anaperture 81 a of alaser light source 81, while thestage 82 supporting thesubstrate 16 horizontally moves in the X and Y directions so that thelaser light 83 scans the entire surface of thesubstrate 16. Examples of thelaser light sources 81 are gas lasers using halogen gases, such as XeCl, ArF, ArCl, and XeF. - The
laser annealing chamber 78 may have any configuration as long as the spot laser beam from the laser light source can scan the entire surface of the substrate to be treated. Also, in this case, gas lasers using halogen gases, such as XeCl, ArF, ArCl, and XeF can be used as laser light sources. Alternatively, other laser light sources such as a YAG laser may be employed depending on the type of the film to be annealed. Laser annealing may be pulsed laser annealing or continuously oscillating laser annealing. The annealing chamber may have a configuration of, for example, a multistage electrical furnace type. - With reference to FIG. 28, the
annealing chamber 79 is of a multistage electrical furnace type. In theannealing chamber 79, a plurality ofsubstrates 16 to be treated is placed onheaters 85 which are vertically arranged in the chamber. Theseheaters 85 are energized to heat thesubstrates 16. A gate valve is provided between the annealingchamber 79 and thetransfer chamber 72. - With reference to FIG. 26, the
loading chamber 73 and the unloadingchamber 74 are provided with a loading cassette and a unloading cassette, respectively, which are detachable from these chambers. These cassettes can contain a plurality ofsubstrates 16, that is, the loading cassette containssubstrates 16 before a deposition treatment whereas the unloading cassette containssubstrates 16 after the deposition treatment. Atransfer robot 87 as means for transferring thesubstrates 16 is placed in thetransfer chamber 72 which is surrounded by the processing chamber unit, theloading chamber 73, and the unloadingchamber 74. Thetransfer robot 87 is provided with anarm 88 thereon. Thearm 88 has an expandable and shrinkable link mechanism and can rotate and move in the vertical direction. Thesubstrate 16 is supported and transferred by the end of thearm 88. - In this
plasma processing apparatus 71, the operations of each component are automatically controlled by a control section, whereas various processing conditions, such as film deposition conditions, annealing conditions, and heating conditions, and process sequences are controlled by an operator. In the operation of theplasma processing apparatus 71,untreated substrates 16 are set on the loading cassette, and are transferred from the loading cassette into each processing chamber by thetransfer robot 87 based on the starting operation by the operator. After thesubstrates 16 are automatically and sequentially processed in each chamber, thesubstrates 16 are placed onto the unloading cassette by thetransfer robot 87. - In the
plasma processing apparatus 71 and the inspection method in this embodiment, first series resonant frequencies f0 of theplasma deposition chambers matching circuits 2A. A variation between the maximum frequency f0max and the minimum frequency f0min is defined by relationship (10) as described above and is set to be less than 0.1. As a result, there are no differences in radiofrequency electrical characteristics between thedeposition chambers plasma chambers plasma chambers - Accordingly, substantially the same result is achieved from a single process recipe for these
different plasma chambers plasma chambers plasma chambers - Thus, a variation in in-plane uniformity of the
substrate 16 on the plasma processing caused by thechambers - In the film processing, such as plasma enhanced CVD and sputtering, the properties of the resulting films are also improved. In other words, the same insulating voltage, etching resistance against etching solutions, and hardness or density of the film are substantially obtained in the
different plasma chambers - Here, the density of the film can be represented by an etching resistance in a buffered hydrofluoric acid (BHF) solution.
- Consequently, overall radiofrequency electrical characteristics of the
plasma processing apparatus 71 can be controlled, resulting in the generation of a highly stable plasma. In other words, the operations of theindividual plasma chambers plasma processing apparatus 71 are uniform and stable. - The above-mentioned process does not require a determination of process conditions by the relationships between enormous amounts of data on these
plasma chambers - Thus, in the installation of new systems and the inspection of installed systems, the time required for obtaining substantially the same results using the same process recipe in these
plasma chambers substrate 16 to be processed. Moreover, according to the inspection method of the present invention, theplasma processing apparatus 71 can be directly evaluated in situ in a short period of time, instead of a two-stage evaluation (i.e., processing of the substrate and confirmation and evaluation of the operation of theplasma processing apparatus 71 based on the evaluation of the processed substrate.) If an inspection process by film deposition on thesubstrates 16 is employed in this embodiment, the plurality ofplasma chambers - Accordingly, the inspection method of this embodiment does not require a shutdown of the production line for several days to several weeks for operational checking and evaluation of the
plasma processing apparatus 71. Thus, the production line has a high productivity with reduced expenses for substrates used in the inspection, processing of these substrates, and labor during the inspection operations. - In each of the
plasma chambers plasma chambers plasma chambers radiofrequency generator 1 can be effectively introduced into the plasma space between theplasma excitation electrode 4 and thesusceptor electrode 8 when the radiofrequency is higher than 13.56 MHz (which is used in conventional methods). When the same frequencies as those in the conventional methods are supplied, the electrical power is more efficiently consumed in the plasma space as compared with conventional plasma processing apparatuses. - As a result, the processing rate is improved by the higher-frequency plasma excitation. In other words, the deposition rate of the film is improved in the plasma enhanced CVD or the like.
- With reference to FIG. 16, the impedance characteristics of the
plasma chambers lead lines 101 a to 101 h having the same impedance are connected to aprobe clamp 104. Since the impedance is measured by the method shown in the first embodiment with reference to FIG. 17, the description therefor is omitted in this embodiment. - In this embodiment, with reference to FIG. 1, the
substrate 16 is placed at thesusceptor electrode 8 in each of theplasma chambers plasma excitation electrode 4. Thesubstrate 16 may be placed at theplasma excitation electrode 4 side. - Fifth Embodiment
- In accordance with a fifth embodiment of the present invention, the plasma processing apparatus, the plasma processing system, and the performance validation system and the inspection method thereof will now be described with reference to the drawings.
- FIG. 29 is a cross-sectional view of an outline configuration of a
plasma processing apparatus 91. - The
plasma processing apparatus 91 has a load-lock chamber 93, anannealing chamber 99, andprocessing chambers transfer chamber 92 contains a transfer robot for transferring substrates and has gates g1, g2, g3, and g4 at the interfaces to the chambers. Thetransfer chamber 92, theannealing chamber 99, and theprocessing chambers lock chamber 93 is evacuated to low vacuum by a low-vacuum pump. - The components of the
plasma processing apparatus 91 of this embodiment correspond to those of theplasma processing apparatus 71 shown in FIGS. 1 to 4, and 26 to 28. Thetransfer chamber 92 corresponds to thetransfer chamber 72, theannealing chamber 99 corresponds to theannealing chamber 79, and the load-lock chamber 93 corresponds to theloading chamber 73 and the unloadingchamber 74. The components having the same configurations are not described. - The processing chambers (plasma chambers)95 and 96 have substantially the same configuration as that of the
deposition chambers - As shown in FIG. 29, these processing
chambers processing chambers - (f0max−fmin)/(f0max+f0min) (10)
- Moreover, this variation is set to be less than 0.03.
- An exemplary configuration of the
processing chamber 95 will now be described. - The cross-sectional view of the
processing chamber 95 corresponds to the cross-sectional view shown in FIG. 11 and is the same as that in the third embodiment. Thus, the configuration will be described with reference to FIG. 11. - The
processing chamber 95 shown in FIG. 11 is of a dual-frequency excitation type and is different from thedeposition chamber 75 of the fourth embodiment shown in FIGS. 1 to 3 with respect to the electrical power supply to thesusceptor electrode 8 side, the configurations of a measuringterminal 61 and the vicinity thereof, and the setting of the first series resonant frequency f0. The description of the other corresponding components referred to with the same reference numerals is omitted. - The first series resonant frequency f0 of each of the
processing chambers radiofrequency generator 1 to the corresponding chamber. - With reference to FIG. 11, the
processing chamber 95 of this embodiment has asusceptor shield 12 around thesusceptor electrode 8. Theshaft 13 and thesusceptor electrode 8 are electrically isolated from thesusceptor shield 12 by a gap between thesusceptor shield 12 and thesusceptor electrode 8 and byinsulators 12C provided around theshaft 13. Theinsulators 12C also serve to maintain a high vacuum in thechamber space 60. A bellows allows thesusceptor electrode 8 and thesusceptor shield 12 to vertically move so as to adjust the distance between theplasma excitation electrode 4 and thesusceptor electrode 8. Thesusceptor electrode 8 is connected to asecond radiofrequency generator 27 via afeed plate 28 coupled with the bottom of theshaft 13 and amatching circuit 25 contained in amatching box 26 at the susceptor electrode side. - The
feed plate 28 is covered by achassis 29 connected to the bottom of a supportingcylinder 12B of thesusceptor shield 12, and thechassis 29 is grounded together with thematching box 26 via a shield wire of acoaxial feed line 27A. Thesusceptor shield 12, thechassis 29, and thematching box 26 are at the same potential. - The
matching circuit 25 achieves impedance matching between thesecond radiofrequency generator 27 and thesusceptor electrode 8. As shown in FIG. 11, the matchingcircuit 25 includes a tuningcoil 30 and atuning capacitor 31, which are connected as passive elements in series between thesecond radiofrequency generator 27 and thefeed plate 28. Aload capacitor 32 is connected in parallel with these passive elements. One end of theload capacitor 32 is connected to thematching box 26. The matchingcircuit 25 thereby has a similar configuration to that of thematching circuit 2A. Thematching box 26 is grounded via a shield line of thefeed line 27A, and one end of theload capacitor 32 is grounded. Another tuning coil may be connected in series with the tuningcoil 30, and another load capacitor may be connected in parallel with theload capacitor 32. - As shown in FIG. 11, an
impedance measuring terminal 61 is connected to an output terminal position PR, which is included in the region for measuring the impedance in theprocessing chamber 95 of this embodiment and which corresponds to an output terminal of atuning capacitor 24, which is a passive element at the final output stage among the passive elements of thematching circuit 2A. - In the vicinity of the output terminal position PR of the
matching circuit 2A, a switch SW1 is provided between the matchingcircuit 2A and afeed plate 3, and a switch SW2 is provided between the impedance meter AN and thefeed plate 3, in order to switch between the matchingcircuit 2A and the impedance meter AN. - The impedance characteristic at the output terminal position PR side of the
matching circuit 2A, when thematching circuit 2A is connected by operation of these switches SW1 and SW2, is set to be equal to the impedance characteristic from theimpedance measuring terminal 61 side when the impedance meter AN is connected by operation of these switches. That is, as shown in FIG. 11, the impedance Z1 near the switch SW1 is equal to the impedance Z2 near the switch SW2. - Herein, the impedance Z1 is defined by a portion from the output terminal position PR of the
chassis 21 to a branch point B for the switch SW2 when the switch SW1 is closed to connect the matching-circuit 2A and when the switch SW2 is opened, and the impedance Z2 is defined by a portion from theimpedance measuring terminal 61 to the branch point B for the switch SW1 when the switch SW2 is closed to connect the impedance meter AN and when the switch SW1 is opened. - A detachable probe for the impedance meter AN is connected to the
impedance measuring terminal 61. - The impedance from the
impedance measuring terminal 61 to the impedance meter AN when the impedance meter AN is connected by operation of the switches SW1 and SW2 is set so that theplasma chamber 95 and theplasma chamber 96 have the same impedance. That is, the length of the coaxial cable from theimpedance measuring terminal 61 to the impedance meter AN is the same in each of these plasma chambers. - In the plasma treatment using the
processing chamber 95 of this embodiment, the switch SW1 is closed and the switch SW2 is opened. Thesubstrate 16 is placed onto thesusceptor electrode 8. A radiofrequency voltage is applied to both theplasma excitation electrode 4 and thesusceptor electrode 8 through thefirst radiofrequency generator 1 and thesecond radiofrequency generator 27, respectively, while a reactive gas is fed into thechamber space 60 from thegas inlet pipe 17 through theshower plate 6 to generate a plasma. The plasma treatment such as film deposition on thesubstrate 16 is thereby achieved. Herein, thefirst radiofrequency generator 1 supplies a radiofrequency voltage of 13.56 MHz or more (for example, 13.56 MHz, 27.12 MHz, or 40.68 MHz). Thesecond radiofrequency generator 27 supplies a radiofrequency voltage which is substantially the same as or different from that of the first radiofrequency generator 1 (for example, of about 1.6 MHz). - The first series resonant frequency f0 as the radiofrequency characteristic A of the
processing chamber 95 in this embodiment is defined by a measurement like that in the fourth embodiment, that is, as shown in FIGS. 11 and 30. - FIG. 30 is an equivalent circuit diagram for measuring the impedance characteristics of the plasma processing apparatus shown in FIG. 11. In these drawings, the
second radiofrequency generator 27 is depicted. Thissecond radiofrequency generator 27 is not shown in the state in which power is supplied, but is shown in a grounded state of the matchingcircuit 25, because the impedance characteristics cannot be measured while supplying power. - In this embodiment, the measuring method of the impedance as a radiofrequency characteristic, and the procedure for setting the power frequency fe and the first series resonant frequency f0 so as to satisfy relationship (1) described above, are the same as those in the third embodiment.
- In the
plasma processing apparatus 91 of this embodiment, theplasma chamber 96 has substantially the same configuration as that of theprocessing chamber 95. Also, in theplasma chamber 96, the first series resonant frequency f0 is set as in theprocessing chamber 95. In detail, in theseplasma chambers - Between the first series resonant frequency f095 measured for the
first processing chamber 95 and the first series resonant frequency f096 measured for thesecond plasma chamber 96, a variation, defined by relationship (10), between the maximum frequency f0max and the minimum frequency f0min is set to be less than 0.03: - (f0max−f0min)/(f0max+f0min) (10)
- The variation of the first series resonant frequency f0 may also be determined by methods (1) to (4) described above.
- In each of the
plasma chambers impedance measuring terminal 61 by switching. In a non measuring mode, i.e., in a plasma generation mode, the switches SW1 and SW2 are operated so that the impedance meter AN is disconnected from theimpedance measuring terminal 61. The impedance meter AN is thereby not electrically affected during the plasma generation mode. Using one impedance meter AN, radiofrequency characteristics of theseplasma chambers processing chambers processing chamber - In this embodiment, the
processing chambers processing chambers matching circuit 2A to the switch SW2 and the same length of coaxial cable from the switch SW2 to the impedance meter AN. - In the
plasma processing apparatus 91, a gate g0 is opened to transfer thesubstrate 16 into the load-lock chamber 93. The gate g0 is closed to evacuate the load-lock chamber 93 by a low-vacuum pump. Gates g1 and g2 are opened to transfer thesubstrate 16 from the load-lock chamber 93 to theannealing chamber 99 by a transfer arm of a transfer robot in thetransfer chamber 92. The gates g1 and g2 are closed to evacuate thetransfer chamber 92 and theannealing chamber 99 using a high-vacuum pump. After thesubstrate 16 is annealed, the gates g2 and g4 are opened to transfer the annealedsubstrate 16 to theprocessing chamber 95 by the transfer arm of the transfer robot. After thesubstrate 16 is processed in theprocessing chamber 95, gates g3 and g4 are opened to transfer thesubstrate 16 to theplasma chamber 96 by the transfer arm of the transfer robot in thetransfer chamber 92. After thesubstrate 16 is processed in theplasma chamber 96, the gates g1 and g3 are opened to transfer thesubstrate 16 to the load-lock chamber 93 by the transfer arm of the transfer robot in thetransfer chamber 92. - Individual sections are automatically operated by a controller section. However, the processing conditions such as film deposition conditions in these processing chambers and the processing sequence are set by an operator. In the use of this
plasma processing apparatus 91, anuntreated substrate 16 is placed onto a loading cassette in the load-lock chamber 93 and the operator pushes a start switch. Thesubstrate 16 is sequentially transferred from the loading cassette to processing chambers by the transfer robot. After a series of processing steps are performed in these processing chambers, thesubstrate 16 is placed into the unloading (loading) cassette by the transfer robot. - In these
plasma chambers substrate 16 is placed on thesusceptor electrode 8, theradiofrequency generator 1 supplies a radiofrequency voltage to both theplasma excitation electrode 4 and thesusceptor electrode 8, while a reactive gas is fed into thechamber space 60 from thegas inlet pipe 17 via theshower plate 6 to generate a plasma for forming an amorphous silicon film, a silicon oxide film, or a silicon nitride film on thesubstrate 16, as in the fourth embodiment. - The
plasma processing apparatus 91 and the inspection method thereof in this embodiment exhibit substantially the same advantages as those in the fourth embodiment. Moreover, the variation of the first series resonant frequency f0 in theplasma chambers different plasma chambers plasma chambers - Accordingly, substantially the same result is achieved from a single process recipe for these
different plasma chambers plasma chambers plasma chambers - In the
plasma processing apparatus 91 of this embodiment, theimpedance measuring terminal 61 is provided at the output terminal position PR of thematching circuit 2A in each of theprocessing chambers impedance measuring terminal 61. Moreover, thematching circuit 2A is disconnected from each of theplasma chambers plasma chambers plasma chambers matching circuit 2A from the power supply line. Accordingly, the impedance characteristics of theplasma chambers - Since the impedance Z1 is equal to the impedance Z2 in these
plasma chambers matching circuit 2A and aprobe 105 for measuring the impedance shown in FIG. 16. Thus, the measurements of the first series resonant frequencies f0 of theseplasma chambers - In addition, the radiofrequency characteristic A (impedance Z) between the branch point B near the measuring point and the impedance meter AN (including the
impedance measuring terminal 61 and the switch SW2) is the same in theplasma chambers impedance measuring terminal 61 is regarded as the impedance measured at the output terminal position PR at the final stage at the output side of thematching circuit 2A in theseplasma chambers - Moreover, the first series resonant frequency f0, and the power frequency fe are set in each of the
plasma chambers electrodes plasma processing apparatus 91. - In this embodiment, the two switches SW1 and SW2 are provided. Since the essential feature in this embodiment is that the impedance from the branch point B to the output terminal position PR is equal to the impedance from the branch point B to the probe, this requirement may be satisfied using one switch.
- As shown in FIG. 32, instead of the switches SW1 and SW2 of the
plasma chambers - In this embodiment, the power frequency fe and the first series resonant frequency f0 are set for the
plasma excitation electrode 4. However, the frequencies may instead be set for thesusceptor electrode 8. In such a case, as shown in FIG. 11, an output terminal position PR′ of the matchingcircuit 25 is defined for determining the region for measuring the impedance. - In addition to the apparatus having the
parallel plate electrodes - Plasma sputtering may be achieved by using a target material instead of the
electrodes - Sixth Embodiment
- In accordance with a sixth embodiment of the present invention, the plasma processing apparatus, the plasma processing system, and the performance validation system and the inspection method thereof will now be described with reference to the drawings.
- FIG. 31 is a schematic view of an outline configuration of a plasma processing system of this embodiment.
- The plasma processing system of this embodiment is substantially a combination of
plasma processing apparatuses plasma processing apparatus 91 corresponding to that shown in FIG. 29 according to the fifth embodiment. Components having the same functions as in the fourth and fifth embodiments are referred to with the same reference numerals, and a detailed description thereof with reference to drawings has been omitted. - As shown in FIG. 31, the plasma processing system of this embodiment constitutes a part of a production line which includes the
plasma processing apparatus 71, theplasma processing apparatus 91, and theplasma processing apparatus 71′. Theplasma processing apparatus 71 has three dual-frequency plasma processing chamber units (plasma chambers) 95, 96, and 97 shown in FIG. 29 (according to the fifth embodiment), instead of the plasma processing chamber units (plasma chambers) 75, 76, and 77 shown in FIG. 26 (according to the fourth embodiment). Theplasma processing apparatus 91 has two plasma processing chamber units (plasma chambers) 95 and 96. Theplasma processing apparatus 71′ has the three dual-frequency plasma processing chamber units (plasma chambers) 95, 96, and 97. These plasma processing chamber units (plasma chambers) 95, 96, and 97 in theplasma processing apparatuses - Impedance measuring terminals, which correspond to the
impedance measuring terminal 61 shown in FIG. 11, of theplasma chambers plasma chambers plasma chambers - The first series resonant frequency f0 of each of the
plasma chambers - f0>3fe (4)
- Among the first series resonant frequencies f0 measured for the
plasma chambers - (f0max−f0min)/(f0max+f0min) (10)
- Furthermore, in this embodiment, the series resonant frequency f0′ defined by a plasma electrode capacitance Ce between the
plasma excitation electrode 4 and thesusceptor electrode 8 is set to be larger than three times the power frequency fe: - f0′>3fe (5)
- In addition, the series resonant frequency f0′ may be larger than the square root of the power frequency fe (=interelectrode distance d/distance δ of plasma nonemitting portion) so that the series resonant frequency f0′ defined by the plasma electrode capacitance Ce and the power frequency fe satisfy relationship (1), as described in the fifth embodiment.
- In the plasma processing system of the present invention, for example, a
substrate 16, which has been preliminarily treated, is subjected to a first film deposition treatment in theplasma chambers plasma processing apparatus 71, is annealed in theannealing chamber 79, and is annealed in thelaser annealing chamber 78. The treatedsubstrate 16 is transferred from theplasma processing apparatus 71 and is subjected to second and third film deposition treatments in plasma processing chambers (not shown in the drawing), which are substantially the same as those of theplasma processing apparatus 71. - The substrate is transferred from this plasma processing apparatus and a photoresist is applied thereto by a photolithographic step using another apparatus (not shown).
- The
substrate 16 is transferred into theplasma processing apparatus 91 and is plasma-etched in theprocessing chambers substrate 16 is transferred from theplasma processing apparatus 91 and is subjected to a film deposition treatment in a plasma chamber (not shown) which is substantially the same as theplasma processing apparatus 91. - The
substrate 16 is transferred from the plasma processing apparatus (not shown in the drawing). After the resist is removed, thesubstrate 16 is subjected to photolithographic patterning in another apparatus not shown in the drawing. - Finally, the
substrate 16 is subjected to first, second, and third deposition treatments in theplasma chambers plasma processing apparatus 71′, and is transferred to the subsequent step to complete the steps in the plasma processing system according to this embodiment. - The plasma processing system and the inspection method of this embodiment exhibit the same advantages as those in the fourth and fifth embodiments. Moreover, the variation between the maximum frequency f0max and the minimum frequency f0min among the first series resonant frequencies f0 of the
plasma chambers plasma chambers plasma processing apparatuses plasma chambers plasma chambers - Accordingly, substantially the same result is achieved from a single process recipe for these
different plasma chambers plasma chambers plasma chambers - Consequently, overall radiofrequency electrical characteristics of the plasma processing system can be controlled, resulting in the generation of a highly stable plasma in each of the
plasma chambers individual plasma chambers - The above-mentioned process does not require a determination of the process conditions based on the relationships between enormous amounts of data for these
plasma chambers - Thus, in the installation of new systems and the inspection of installed systems, the time required for obtaining substantially the same results using the same process recipe in these
plasma chambers substrates 16 to be processed. Moreover, according to the inspection method of the present invention, the plasma processing system can be directly evaluated in situ in a short period of time, instead of a two-stage evaluation (i.e., processing of the substrate, and confirmation and evaluation of the operation of the plasma processing system based on the evaluation of the processed substrate). If an inspection process by film deposition on thesubstrates 16 is employed in this embodiment, the plurality ofplasma chambers - Accordingly, the inspection method of this embodiment does not require a shutdown of the production line for several days to several weeks for operational checking and evaluation of the plasma processing system. Thus, the production line has a high productivity and reduces the cost of substrates used in the inspection, processing of these substrates, and labor during the inspection operations.
- In each of the
plasma chambers plasma chambers plasma chambers plasma excitation electrode 4 and thesusceptor electrode 8, even if the radiofrequency is higher than 13.56 MHz (which is used in conventional methods). When the same frequencies as those in the conventional methods are supplied, the electrical power is more efficiently consumed in the plasma space compared with conventional plasma processing apparatuses. - As a result, the processing rate is improved by the higher-frequency plasma excitation. In other words, the deposition rate of the film is improved in the plasma enhanced CVD or the like. Since the generation of the plasma is stabilized in all the
plasma chambers plasma processing apparatuses - Thus, variation in the in-plane uniformity of the
substrate 16 on the plasma processing caused by thechambers - When the applied frequency is the same, the plasma density in this embodiment can be increased as compared with a conventional plasma processing system. Thus, a film having a desired thickness can be deposited by reduced input electrical powder at a processing rate which is the same as that of the conventional system. Since this advantage is applicable to the
plasma chambers - In the plasma processing system of this embodiment, the series resonant frequency f0′ and the power frequency fe are set for each
plasma chamber electrodes plasma chamber - In the plasma processing system of this embodiment, the impedance measuring terminal is provided at the output terminal position PR of the
matching circuit 2A in each of theprocessing chambers matching circuit 2A is disconnected from each of theplasma chambers plasma chambers plasma chambers matching circuit 2A from the power supply line. Accordingly, the impedance and resonant frequency characteristics of theplasma chambers - Thus, a probe can be readily connected to the
impedance measuring terminal 61 when the impedance characteristics of theplasma chambers matching circuit 2A from theplasma chambers probe 105 for measuring the impedance. - Moreover, as shown in FIG. 11, the impedance Z1 is equal to the impedance Z2, and the impedance from the
impedance measuring terminal 61 to the switch SW3 shown in FIG. 31) is equal in theplasma chambers plasma processing apparatuses impedance measuring terminal 61 can be regarded as the same as the impedance observed at the output terminal position PR at the final stage at the output side of thematching circuit 2A. - Since there are no differences in impedance characteristics from the
impedance measuring terminal 61 to the switch SW3 among theplasma chambers plasma chamber plasma processing apparatuses - In this embodiment, the switches SW1, SW2, and SW3 may cooperate with switching of the
plasma chambers - In this embodiment, the power frequency fe and the first series resonant frequency f0 for the
plasma excitation electrode 4 are set. However, the frequencies for thesusceptor electrode 8 may be set instead. In such a case, as shown in FIG. 11, an output terminal position PR′ of the matchingcircuit 25 is determined for defining the region for measuring the impedance. - In addition to the apparatus having the
parallel plate electrodes - In this embodiment, as shown in FIG. 32, each of the plasma chambers (plasma processing chamber units)95, 96, and 97 is provided with a
matching circuit 2A and a radiofrequency generator, and an impedance meter AN is connected to a coupler of thematching circuit 2A via a switch SW4. As shown in FIG. 33, matchingcircuits 2A of theplasma chambers same radiofrequency generator 1 by switching. Alternatively, as shown in FIG. 34, theplasma chambers same matching circuit 2A by switching. In this case, as shown in FIG. 33, the impedance meter AN is connected to couplers between theplasma chambers matching circuit 2A via the switch SW4. - In this embodiment, the first series resonant frequency f0, as a radiofrequency characteristic A, is set according to relationship (10) described above. Alternatively, the radiofrequency characteristic A may be a resonant frequency f; or an impedance Ze, a resistance Re, or a reactance Xe at the frequency of the radiofrequency waves; and the variation thereof may be defined by relationship (10A) described above. Since the above characteristics of these
plasma chambers plasma chambers plasma chambers - When the impedance Ze at the plasma excitation frequency is employed as the radiofrequency characteristic A, it is not necessary to find the dependence of the radiofrequency characteristic on the frequency in the
plasma chambers plasma chambers - When the resistance Re or the reactance Xe is employed, this can more directly reflect the radiofrequency electrical characteristic at the plasma excitation frequency of the plasma chamber as compared with the impedance Ze which corresponds to the vector defined by the resistance Re and the reactance Xe.
- Seventh Embodiment
- In accordance with a seventh embodiment of the present invention, the plasma processing apparatus, the plasma processing system, and the performance validation system and the inspection method thereof will now be described with reference to the drawings.
- FIG. 35 is a schematic view of an outline configuration of a plasma processing unit (plasma chamber) of this embodiment.
- This embodiment differs from the fourth to sixth embodiments with respect to the region for measuring the frequency characteristics, the measuring terminal, the switches, and the plasma processing unit (plasma chamber). The configuration of the plasma processing apparatus and the configuration of the plasma processing system are the same as those according to the fourth to sixth embodiments. Components having the same functions as in the fourth to sixth embodiments are referred to with the same reference numerals, and a detailed description thereof with reference to drawings has been omitted.
- In this embodiment, the plasma chamber is of a dual-frequency type, as in the second embodiment. With reference to FIG. 35, a measuring point PR3 defining the region for measuring the radiofrequency characteristic A is set at an input terminal position of a
matching circuit 2A, which is connected to aradiofrequency generator 1 via aradiofrequency feed line 1A in eachplasma chamber radiofrequency generator 1 via theradiofrequency feed line 1A in a plasma generation mode, and to the radiofrequency measuring meter (impedance meter AN) via a connectingline 61A in a radiofrequency measuring mode. - Here, the impedance from the measuring point PR3 to the
radiofrequency generator 1 via theradiofrequency feed line 1A is equal to the impedance from the measuring point PR3 to the impedance meter AN via the connectingline 61A. In other words, theradiofrequency feed line 1A and the connectingline 61A have the same length. The radiofrequency characteristics A, and particularly the first series resonant frequency f0 by measuring the impedance etc., can be readily measured simply by operating the switch SW5, without disconnecting the impedance meter AN from the plasma chamber. - Herein, the first series resonant frequency f0 as the radiofrequency characteristic A in the plasma chamber of this embodiment is defined by a measurement, as in the fourth to sixth embodiments. That is, the first series resonant frequency f0 in this embodiment is defined by a measurement, as shown in FIGS. 36 and 37.
- FIGS.36 is a schematic view for illustrating the impedance characteristics of the plasma chamber of this embodiment. FIG. 37 is an equivalent circuit diagram of the plasma chamber shown in FIG. 36 for measuring the impedance characteristics.
- As shown in FIG. 36, possible radiofrequency electrical factors affecting the first series resonant frequency f0 among radiofrequency characteristics A which are measured within the above-described range are as follows:
- Contribution from the connecting
line 61A; - Inductance LSW and resistance RSW of the switch SW5;
- Contribution from the
matching circuit 2A; - Inductance Lf and resistance Rf of the
feed plate 3; - Plasma electrode capacitance Ce between the
plasma excitation electrode 4 and thesusceptor electrode 8; - Capacitance CS between the
susceptor electrode 8 and thesusceptor shield 12; - Inductance LC and resistance RC of the supporting
cylinder 12B of thesusceptor shield 12; - Inductance LB and resistance RB of a
bellows 11; - Inductance LA and resistance RB of the
chamber wall 10; - Capacitance CA between the
gas inlet pipe 17 and theplasma excitation electrode 4 which sandwich aninsulator 17 a; - Capacitance CB between the
plasma excitation electrode 4 and thechassis 21; and - Capacitance CC between the
plasma excitation electrode 4 and thechamber wall 10. - It is considered that these radiofrequency electrical factors constitute a circuit which conducts a radiofrequency current supplied in a plasma emitting mode, as shown in FIG. 37. That is, in this equivalent diagram, the contribution from the connecting
line 61A, the inductance LSW and resistance RSW of the switch SW5, the contribution from thematching circuit 2A, the inductance Lf and resistance Rf of thefeed plate 3, the plasma electrode capacitance Ce between theplasma excitation electrode 4 and thesusceptor electrode 8, the capacitance CS between thesusceptor electrode 8 and thesusceptor shield 12, the inductance LC and resistance RC of the supportingcylinder 12B of thesusceptor shield 12, the inductance LB and resistance RB of thebellows 11, and the inductance LA and resistance RB of thechamber wall 10 are connected in series in that order, with the terminal of the resistance RA being grounded. Moreover, the capacitance CA, the capacitance CB, and the capacitance CC are connected in parallel between the resistance Rf and the plasma electrode capacitance Ce, with one end of each capacitance being grounded. The first series resonant frequency f0 can be defined by measuring the impedance of this equivalent circuit. - The first series resonant frequency f0 defined in such a manner is determined in the same way as shown in the fourth to sixth embodiments. Among the first series resonant frequencies f0 of the individual plasma chambers, a variation of the first series resonant frequencies f0 of the plasma chambers is defined by relationship (10) using the maximum frequency f0max and the minimum frequency f0min, and is set to be less than 0.03. The variation of the first series resonant frequencies f0 can be set by methods (1) to (4) described above, and by the following methods (5) to (7):
- (5) Selecting
load capacitors 22 substantially having the same characteristics; - (6) Selecting
tuning capacitors 24 substantially having the same characteristics; and - (7) Adjusting the shapes (size, number of turns, and length) of tuning coils23.
- The plasma processing apparatus or system, and the inspection method of this embodiment, exhibit the same advantages as those in the fourth and sixth embodiments. Moreover, by including the
matching circuit 2A in the region for the radiofrequency characteristics, there are no differences in radiofrequency electrical characteristics between theplasma chambers chamber space 60. Thus, the effective electrical powers consumed in the plasma spaces in theplasma chambers matching circuit 2A, the same plasma processing results are obtainable from the same process recipe. - In this embodiment, the length of the
radiofrequency feed line 1A is equal to the length of the connectingline 61A. Thus, the radiofrequency characteristic A of thechamber space 60 measured at the output terminal position PR2 of theradiofrequency generator 1 when the switch SW5 electrically disconnects the measuring point PR3 from the radiofrequency measuring meter AN and electrically connects thematching circuit 2A to theradiofrequency generator 1 is equal to the radiofrequency characteristic A of thechamber space 60 measured at an output terminal position PR2′ of the impedance meter AN when the switch SW5 electrically connects the measuring point PR3 to the impedance meter AN and electrically disconnects thematching circuit 2A from theradiofrequency generator 1. - Thus, in this embodiment, the measured radiofrequency characteristic is substantially the same as the radiofrequency characteristic A of the plasma chamber which is measured at the output terminal position PR2 of the
radiofrequency feed line 1A connected to theradiofrequency generator 1, as shown in FIGS. 35, 36, and 37. By such determination of the region for measuring the radiofrequency characteristic A, thedifferent plasma chambers chamber space 60, including thematching circuit 2A and theradiofrequency feed line 1A, as compared with a case in which the region for measuring the radiofrequency characteristic A does not include thematching circuit 2A and theradiofrequency feed line 1A. Thus, theseplasma chambers matching circuit 2A and theradiofrequency feed line 1A. - With reference to FIGS. 1 and 11, the region for measuring the radiofrequency characteristics in the fourth to sixth embodiments may be set at the measuring point PR3 or the measuring point PR2.
- As shown in FIG. 40, the region for measuring the radiofrequency characteristics may be defined by the output terminal position PR2 of the
radiofrequency generator 1. That is, theradiofrequency generator 1 is disconnected from theradiofrequency feed line 1A at the output terminal position PR2. - Alternatively, the region may be defined by the measuring point PR3 at the input terminal of the
matching circuit 2A. That is, theradiofrequency generator 1 and theradiofrequency feed line 1A are disconnected from thematching circuit 2A at the measuring point PR3. - Another embodiment of the performance validation system of the plasma processing apparatus or the plasma processing system in accordance with the present invention will now be described with reference to the drawings.
- The configuration of this system is the same as that shown in FIG. 20, and the method for using this system is the same as that described with reference to FIGS.21 to 24. Thus, the description thereof is omitted.
- With reference to FIG. 23, a specifications page includes an apparatus section K6 for displaying a selected apparatus, a vacuum performance section K7, a gas supply and discharge performance section K8, a temperature performance section K9, and an electrical performance section K10 of the plasma processing chamber. These sections correspond to “standard performance information” of the plasma chamber of the selected apparatus.
- The following items are described in these sections. In the vacuum performance section K7:
- final degree of vacuum: 1×10−4 Pa or less, and
- operational pressure: 30 to 300 Pa. In the gas supply and discharge performance section K8:
- maximum gas flow rates:
SiH 4100 SCCM, NH3 500 SCCM, N2 2,000 SCCM, and - In the temperature performance section K9:
- heater temperature: 200 to 350±10° C., and
- chamber temperature: 60 to 80±2.0° C.
- Herein, SCCM (standard cubic centimeters per minute) represents a gas flow rate which is converted to standard conditions (0° C. and 1013 hPa) and the unit thereof corresponds to cm3/min.
- For each parameter P, the variation between the maximum Pmax and the minimum Pmin in different plasma chambers of a plasma processing apparatus or a plasma processing system is defined by relationship (10B):
- (Pmax−Pmin)/(Pmax+Pmin) (10B)
- This variation is displayed with a standard range (a maximum and a minimum) of each parameter of each plasma processing apparatus or plasma processing system.
- The electrical performance section K10 of the plasma processing chamber includes the description of the first series resonant frequency f0 described in the fourth to seventh embodiments, and the relationship between this value and the power frequency fe. This section K10 further includes the description of the resistance Re and the reactance Xe at the power frequency fe of the plasma chamber, the plasma capacitance C0 between the
plasma excitation electrode 4 and thesusceptor electrode 8, and the loss capacitance CX between theplasma excitation electrode 4 and each position lying at the grounded potential of the plasma chamber. The specifications page CP1 includes a description for certifying the performance, that is, “it is certified that these parameters were within the ranges described in this page when the plasma processing apparatus or the plasma processing system was supplied”. - Thus, overall radiofrequency electrical characteristics of the plasma processing apparatus or the plasma processing system and variations in electrical characteristics of the plasma chambers can be provided as novel references when it is distributed. A customer's terminal C1 or an engineer's terminal C2 can print out the performance information to make a hard copy that can be used as a catalog or specifications including the performance information. The values of the first series resonant frequency f0, the resistance Re, the reactance Xe, and the capacitances C0 and CX, and the certification statements are displayed on the customer's terminal C1 or the engineer's terminal C2, or are described in the catalog or specifications so that the customer can make a purchasing decision based on an estimation of the plasma chamber performance as opposed to actually examining the electrical components.
- With reference to FIG. 20, the server S waits for a display request for the next subpage (
Step S 3 in FIG. 21) until the log-off request from the customer's terminal C1 is received (Step S5) after a subpage is transmitted to the customer's terminal C1, and completes the communication with the customer's terminal C1 when the log-off request is received from the customer's terminal C1. - The customer who purchases a plasma processing apparatus or plasma processing system from the maintenance engineer can access the sever S to browse the contents of the “performance information” of the purchased apparatus or system.
- With reference to FIG. 24, when the customer and the maintenance engineer conclude an agreement of sale, the maintenance engineer provides a serial number of the plasma processing apparatus or plasma processing system, a customer ID which corresponds to the serial number, and a customer password (browsing password) which allow the customer to browse the “operation and maintenance information” of the plasma processing apparatus or plasma processing system and individual plasma chambers thereof.
- With reference to FIG. 22, when the customer accesses the server, the customer operates a customer button K5 in the catalog page CP to submit the display request for the customer screen to the server S.
- When receiving the display request (Step S3-B), the server S submits a subpage for prompting the customer's terminal C1 to input a “customer password” (Step S6). FIG. 24 shows a customer page CP2 including a customer ID input box K11 and a password input box K12.
- The customer page CP2 for the input request is displayed on the display of the customer's terminal C1, and the customer's terminal C1 inputs a “customer password” and a “customer ID”, which were previously provided, in order to identify the plasma processing apparatus or plasma processing system and the individual plasma chambers thereof.
- As shown in FIG. 24, the customer inputs a customer ID and a password in the customer ID input box K11 and the password input box K12, respectively. When the server S receives the authorized “customer ID” and “customer password” from the customer's terminal C1 (Step S7), the server S transmits to the customer's terminal C1 the “operation and maintenance information” subpage that pertains to the “customer password” (Step S9).
- That is, browsing of the “operation and maintenance information” is permitted by the authorized customer who concludes the agreement of sale on the plasma processing apparatus or plasma processing system and who knows the correct “password”. Thus, no third party can obtain the “operation and maintenance information” by accessing the server S. In general, the maintenance engineer concludes agreements of sale with many customers and distributes a plurality of plasma processing apparatuses and plasma processing systems to these customers. A “customer password” is provided for each of the plasma processing apparatuses or plasma processing systems and the plasma chambers thereof to the corresponding customer. Thus, the customer can browse the “operation and maintenance information” which relates to the “customer password” and which corresponds to the purchased plasma processing apparatus or plasma processing system and the plasma chambers thereof.
- This system can effectively prevent confidential information from being disclosed to other customers, and can identify a plurality of plasma processing apparatuses or systems and the plasma chambers thereof which are purchased by the same customer. When the authorized “customer password” is not received (Step S7), the server S transmits a reject message to the customer's terminal C1 (Step S8) to prompt the customer to reinput a “customer password”. When the customer inputs the authorized “customer password”, the customer can browse the “operation and maintenance information”.
- When the ID and password are authorized (Step S7), the server retrieves a subpage which corresponds to the requested information from a database D and transmits the information to the customer. In detail, the server S retrieves data such as “vacuum performance”, “gas supply and discharge performance”, “temperature performance”, and “electrical performance” from the database D based on the requests to display the “standard performance information” or the “operation and maintenance information” on the plasma processing apparatus or plasma processing system and the plasma chambers thereof which are identified by the customer ID, and transmits a specifications page including this data (Step S9).
- FIG. 38 shows an “operation and maintenance information” subpage CP3 which is transmitted to the customer's terminal C1 from the server S. The maintenance history page CP3 includes a serial number display section K13 for displaying the serial number of the purchased plasma processing apparatus or plasma processing system and the plasma chambers thereof, the vacuum performance section K7, the gas supply and discharge performance section K8, the temperature performance section K9, the electrical performance section K10 of the plasma processing chamber. These sections correspond to the “standard performance information” as shown in FIG. 23. The maintenance history page CP3 further includes a vacuum performance maintenance section K14, a gas supply and discharge performance section K15, a temperature performance section K16, and an electrical performance section K17 of the plasma processing chamber. These sections correspond to the “operation and maintenance information” of the purchased apparatus.
- For example, the following items are described in the corresponding sections for the “operation and maintenance information”.
- In the vacuum performance maintenance section K14:
- final degree of vacuum: 1.3×10−5 Pa or less, and
- operational pressure: 200 Pa.
- In the gas supply and discharge performance section K15:
- gas flow rates:
SiH4 40 SCCM, NH3 160 SCCM, N2 600 SCCM, and - In the temperature performance section K16:
- heater temperature: 302.3 ±4.9° C., and
- chamber temperature: 80.1 ±2.1° C.
- For each parameter P, the variation between the maximum Pmax and the minimum Pmin in different plasma chambers of a plasma processing apparatus or a plasma processing system is defined by relationship (10B):
- (Pmax−Pmin)/(Pmax+Pmin) (10B)
- This variation is displayed with a standard range (a maximum and a minimum) of each parameter of each plasma processing apparatus or plasma processing system.
- A “detail” button K18 is provided in each title column for the corresponding sections K14, K15, K16, or K17 so that the customer can browse the corresponding detailed information.
- When the customer submits a display request, a detailed maintenance page CP4 including detailed information on the maintenance history is transmitted from the database D to the customer's terminal C1.
- FIG. 39 shows the “detailed maintenance information” subpage submitted from the server S to the customer's terminal C1.
- This “detailed maintenance information” subpage includes a serial number display section K13 for displaying the serial number of the purchased plasma processing apparatus or plasma processing system and the plasma chambers thereof, and the selected maintenance history columns. The selected maintenance history columns display values of parameters P in each plasma chamber, and variations of these parameters P at the maintenance date.
- The electrical performance section K10 of the plasma processing chamber and the electrical performance section K17 of the plasma processing chamber include the value of the first series resonant frequency f0, and the relationship between the value and the power frequency fe, as described in the first to fourth embodiments. The section K10 and the section K17 also include the resistance Re and reactance Xe of the plasma chamber at the power frequency fe, the plasma capacitance C0 between the
plasma excitation electrode 4 and thesusceptor electrode 8, the loss capacitance CX between theplasma excitation electrode 4, and the grounded potential portion of the plasma chamber, etc. - The server S simultaneously acquires “standard performance information” data such as “vacuum performance”, “gas supply and exhaust performance”, “temperature performance”, and “electrical performance of plasma processing chamber”, and provides the maintenance history page CP3 and the detailed maintenance page CP4 together with the “operation and maintenance information”. The customer can thereby browse the “operation and maintenance information” with reference to the “standard performance information”. Thus, the customer can confirm the “standard performance information” as a reference in use, and can consult the “operation and maintenance information” as parameters showing an operational state, in the “performance information” of the purchased plasma processing apparatus or plasma processing system and the plasma chambers thereof. Also, by comparing the “standard performance information” with the “operation and maintenance information”, the customer can check the operation of the plasma processing apparatus or plasma processing system and the plasma chambers thereof, can determine when maintenance is necessary, and can determine the plasma processing state.
- If the server S does not receive the log-off request from the customer's terminal C1 after transmission of the subpages C3 and C4 to the customer's terminal C1 (Step S5), the server S transmits an invalid connection massage to the customer's terminal C1 (Step S8) to prompt reentry of the “customer password” or to wait for the next display request (Step S3). If the server S receives the log-off request from the customer's terminal C1 (Step S5), the communication with the customer's terminal C1 is completed.
- The performance validation system according to this embodiment includes at least one client terminal and performance information providing means for providing performance information to the client terminal, wherein the performance information comprises standard operation information regarding general information of the plasma processing apparatus and operation and maintenance information regarding specific information of the plasma processing apparatus, wherein the client terminal has at least one function of requesting the display of performance information and uploading the operation and maintenance information to the performance information providing means. Preferably, the standard performance information and the operation and maintenance information comprise information regarding a first series resonant frequency f0. Preferably, the standard performance information is used as a catalog or a specification document. Thus, the customer can browse the performance information including the standard performance information and the uploaded operation and maintenance information of the plasma processing apparatus or system and the plasma processing chambers thereof. The customer can obtain standard information on when the apparatus or system is installed, and the operation and maintenance information on when the apparatus or system and the plasma processing chambers are used.
- When the performance information includes the first series resonant frequencies f0 and variations thereof as performance parameters of the plasma processing chambers, the customer can determine the performance of the plasma processing apparatus or plasma processing system and the plasma processing chambers thereof before deciding the to purchase the apparatus or system. Moreover, the performance information can be output as catalogs and specifications.
- In these examples, the variation of the first series resonant frequencies f0 of a plurality of plasma chambers was set to be a predetermined value and changes in properties of deposited films were measured.
- The plasma processing apparatus used had two plasma chambers, as shown in the fifth embodiment, and these plasma chambers were of a dual-frequency excitation type.
- In the plasma processing apparatus, the
parallel plate electrodes - The variation defined by the maximum frequency f0max and the minimum frequency f0min of the first series resonant frequencies f0 of this plasma processing apparatus was set to be 0.09 according to relationship (10), and the average of the first series resonant frequencies f0 was set to be 43 MHz.
- The variation defined by the maximum frequency f0max and the minimum frequency f0min of the first series resonant frequencies f0 of this plasma processing apparatus was set to be 0.02 according to relationship (10), and the average of the first series resonant frequencies f0 was set to be 43 MHz.
- The variation defined by the maximum frequency f0max and the minimum frequency f0min of the first series resonant frequencies f0 of this plasma processing apparatus was set to be 0.11 according to relationship (10), and the average of the first series resonant frequencies f0 was set to be 43 MHz.
- In each of EXAMPLES 5 and 6 and COMPARATIVE EXAMPLE 2, silicon nitride film was deposited according to the following identical process recipe to measure the variation in the film thicknesses:
- (1) Depositing a SiNX film on a 6-inch glass substrate by plasma enhanced CVD;
- (2) Patterning a resist film by photolithography;
- (3) Dry-etching the SiNX film with SF6 and O2;
- (4) Removing the resist film by O2 ashing;
- (5) Measuring the roughness of the SiNX film using a contact displacement meter;
- (6) Calculating the deposition rate using the deposition time and the film thickness; and
- (7) Measuring the in-plane uniformity of the film at 16 points on the substrate.
- The deposition conditions were as follows:
- Substrate temperature: 350° C.
- SiH4 flow rate: 40 SCCM
- NH3 flow rate: 200 SCCM
- N2 flow rate: 600 SCCM
- Deposition rate: about 200 nm/min
TABLE 3 Deposition Variation in In-plane Rate Deposition Uniformity Variation (nm/min) Rate (%) (%) of f0* OMPARATIVE Chamber 1 181 86 4.6 0.11 XAMPLE 1Chamber 2215 6.2 XAMPLE 5 Chamber 1195 4.9 4.6 0.09 Chamber 2215 5.7 XAMPLE 6 Chamber 1207 1.9 4.6 0.02 Chamber 2215 5.4 - The results shown in Table 3 demonstrate that the difference in the film thickness between the plasma chambers is reduced when the variation of the first series resonant frequencies f0 is set to be in the range specified according to the present invention. In other words, the operational characteristics of the plasma chambers are improved by such specific variation of the first series resonant frequencies f0.
Claims (62)
1. A plasma processing apparatus comprising:
a plasma processing chamber having a plasma excitation electrode for exciting a plasma;
a radiofrequency generator for supplying a radiofrequency voltage to the electrode;
a radiofrequency feeder connected to the electrode; and
a matching circuit having an input terminal and an output end, wherein the input terminal is connected to the radiofrequency generator and the output end is connected to an end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator,
wherein a frequency which is three times a first series resonant frequency f0 of the plasma processing chamber which is measured at the end of the radiofrequency feeder is larger than a power frequency fe of the radiofrequency waves.
2. A plasma processing apparatus according to claim 1 , wherein a frequency of 1.3 times the first series resonant frequency f0 is larger than a power frequency fe.
3. A plasma processing apparatus according to claim 2 , wherein the first series resonant frequency f0 is larger than three times the power frequency fe.
4. A plasma processing apparatus according to claim 3 , wherein a series resonant frequency f0, which is defined by a capacitance between the plasma excitation electrode and a counter electrode for generating the plasma in cooperation with the plasma excitation electrode is larger than three times the power frequency fe.
5. A plasma processing apparatus according to claim 4 , wherein the plasma excitation electrode and the counter electrode are of a parallel plate type, and the series resonant frequency f0, and the power frequency fe satisfy the relationship:
wherein d represents the distance between the plasma excitation electrode and the counter electrode, and δ represents the sum of the distance between the plasma excitation electrode and the generated plasma and the distance between the counter electrode and the generated plasma.
6. A plasma processing apparatus according to claim 1 , further comprising a resonant frequency measuring terminal for measuring the resonant frequency of the plasma processing chamber, in the vicinity of the end of the radiofrequency feeder.
7. A plasma processing apparatus according to claim 6 , further comprising a switch provided between the radiofrequency feeder and the resonant frequency measuring terminal, wherein the switch electrically disconnects the end of the radiofrequency feeder from the resonant frequency measuring terminal and connects the end of the radiofrequency feeder to the output end of the matching circuit in a plasma excitation mode in which the plasma is excited, whereas the switch electrically connects the end of the radiofrequency feeder to the resonant frequency measuring terminal and disconnects the end of the radiofrequency feeder from the resonant frequency measuring terminal in a measuring mode in which the resonant frequency of the plasma processing chamber is measured.
8. A plasma processing apparatus according to claim 6 , further comprising a resonant frequency measuring unit which is detachably connected to the resonant frequency measuring terminal.
9. A plasma processing apparatus according to claim 8 , wherein the resonant frequency characteristics in the plasma excitation mode and the resonant frequency characteristics in the measuring mode are set to be equal to each other.
10. A performance validation system for a plasma processing apparatus according to claim 1 , the system comprising:
at least one client terminal; and
performance information providing means for providing performance information to said at least one client terminal,
wherein the performance information comprises standard operation information regarding general information of the plasma processing apparatus and operation and maintenance information regarding specific information of the plasma processing apparatus,
wherein said at least one client terminal has at least one function of requesting the display of performance information and uploading the operation and maintenance information to the performance information providing means.
11. The performance validation system for the plasma processing apparatus according to claim 10 , wherein the standard performance information and the operation and maintenance information comprise information regarding a first series resonant frequency f0.
12. The performance validation system for the plasma processing apparatus according to claim 11 , wherein the standard performance information is used as a catalog or a specification document.
13. A plasma processing apparatus comprising a plurality of plasma processing chamber units,
each plasma processing chamber unit comprising:
a plasma processing chamber having a plasma excitation electrode for exciting a plasma;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
a radiofrequency feeder connected to the plasma excitation electrode; and
a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator and the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator,
wherein a variation, defined by (Amax−Amin)/(Amax+Amin), between the maximum frequency Amax and the minimum frequency Amin among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, wherein, in each plasma processing chamber unit, the radiofrequency characteristic A thereof is measured at a measuring point which is at the end of the corresponding radiofrequency feeder connected to the output terminal of the corresponding matching circuit.
14. A plasma processing apparatus comprising a plurality of plasma processing chamber units,
each plasma processing chamber unit comprising:
a plasma processing chamber having a plasma excitation electrode for exciting a plasma;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
a radiofrequency feeder connected to the plasma excitation electrode; and
a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator via a radiofrequency feed line, whereas the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator,
wherein a variation, defined by (Amax−Amin)/(Amax+A min) between the maximum frequency Amax and the minimum frequency Amin among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, wherein, in each plasma processing chamber unit, the radiofrequency characteristic A thereof is measured at a measuring point which is the radiofrequency-generator-side end of the radiofrequency feed line connected to the respective radiofrequency generator.
15. A plasma processing apparatus comprising a plurality of plasma processing chamber units,
each plasma processing chamber unit comprising;
a plasma processing chamber having a plasma excitation electrode for exciting a plasma;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
a radiofrequency feeder connected to the plasma excitation electrode; and
a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator via a radiofrequency feed line, whereas the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator,
wherein a variation, defined by (Amax−Amin)/(Amax+Amin) between the maximum frequency Amax and the minimum frequency Amin among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, wherein, in each plasma processing chamber unit, the radiofrequency characteristic A thereof is measured at a measuring point which is the input terminal connected to the corresponding radiofrequency feed line.
16. A plasma processing apparatus according to claim 13 , wherein the predetermined value is less than 0.1.
17. A plasma processing apparatus according to claim 14 , wherein the predetermined value is less than 0.1.
18. A plasma processing apparatus according to claim 15 , wherein the predetermined value is less than 0.1.
19. A plasma processing apparatus according to claim 13 , wherein each radiofrequency characteristic A is any one of a resonant frequency f, an impedance Ze at the frequency of the radiofrequency generator, a resistance Re at the frequency of the radiofrequency generator, and a reactance Xe at the frequency of the radiofrequency generator.
20. A plasma processing apparatus according to claim 14 , wherein each radiofrequency characteristic A is any one of a resonant frequency f, an impedance Ze at the frequency of the radiofrequency generator, a resistance Re at the frequency of the radiofrequency generator, and a reactance Xe at the frequency of the radiofrequency generator.
21. A plasma processing apparatus according to claim 15 , wherein each radiofrequency characteristic A is any one of a resonant frequency f, an impedance Ze at the frequency of the radiofrequency generator, a resistance Re at the frequency of the radiofrequency generator, and a reactance Xe at the frequency of the radiofrequency generator.
22. A plasma processing apparatus according to claim 13 , wherein each radiofrequency characteristic A is a first series resonant frequency f0.
23. A plasma processing apparatus according to claim 14 , wherein each radiofrequency characteristic A is a first series resonant frequency f0.
24. A plasma processing apparatus according to claim 15 , wherein each radiofrequency characteristic A is a first series resonant frequency f0.
25. A plasma processing apparatus according to claim 13 , wherein three times the first series resonant frequency f0 corresponding to each plasma processing chamber is larger than the frequency fe of the radiofrequency waves.
26. A plasma processing apparatus according to claim 13 , wherein each plasma processing chamber has a measuring terminal for measuring the radiofrequency characteristic A thereof at the corresponding measuring point.
27. A plasma processing apparatus according to claim 14 , wherein each plasma processing chamber has a measuring terminal for measuring the radiofrequency characteristic A thereof at the corresponding measuring point.
28. A plasma processing apparatus according to claim 15 , wherein each plasma processing chamber has a measuring terminal for measuring the radiofrequency characteristic A thereof at the corresponding measuring point.
29. A plasma processing apparatus according to claim 26 , wherein each plasma processing chamber has a switch in the vicinity of the corresponding measuring point in which the switch electrically disconnects the measuring point from the measuring terminal and connects the radiofrequency feeder to the radiofrequency generator in a plasma excitation mode in which the plasma is excited, whereas the switch electrically connects the measuring point to the measuring terminal and disconnects the radiofrequency generator from the measuring point in a measuring mode in which the radiofrequency characteristic A of the corresponding plasma processing chamber is measured.
30. A plasma processing apparatus according to claim 27 , wherein each plasma processing chamber has a switch in the vicinity of the corresponding measuring point in which the switch electrically disconnects the measuring point from the measuring terminal and connects the radiofrequency feeder to the radiofrequency generator in a plasma excitation mode in which the plasma is excited, whereas the switch electrically connects the measuring point to the measuring terminal and disconnects the radiofrequency generator from the measuring point in a measuring mode in which the radiofrequency characteristic A of the corresponding plasma processing chamber is measured.
31. A plasma processing apparatus according to claim 28 , wherein each plasma processing chamber has a switch in the vicinity of the corresponding measuring point in which the switch electrically disconnects the measuring point from the measuring terminal and connects the radiofrequency feeder to the radiofrequency generator in a plasma excitation mode in which the plasma is excited, whereas the switch electrically connects the measuring point to the measuring terminal and disconnects the radiofrequency generator from the measuring point in a measuring mode in which the radiofrequency characteristic A of the corresponding plasma processing chamber is measured.
32. A plasma processing system comprising a plurality of plasma processing apparatuses,
each plasma processing apparatus comprising:
a plasma processing chamber having a plasma excitation electrode for exciting a plasma;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
a radiofrequency feeder connected to the plasma excitation electrode; and
a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator and the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator,
wherein a variation, defined by (Amax−Amin)/(Amax+Amin), between the maximum frequency Amax and the minimum frequency Amin among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, wherein, in each plasma processing chamber, the radiofrequency characteristic A thereof is measured at a measuring point which is at the end of the corresponding radiofrequency feeder connected to the output terminal of the corresponding matching circuit.
33. A plasma processing system comprising a plurality of plasma processing apparatuses,
each plasma processing apparatus comprising:
a plasma processing chamber having a plasma excitation electrode for exciting a plasma;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
a radiofrequency feeder connected to the plasma excitation electrode; and
a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator via a radiofrequency feed line, whereas the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator,
wherein a variation, defined by (Amax−Amin)/(Amax+Amin), between the maximum frequency Amax and the minimum frequency Amin among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, wherein, in each plasma processing chamber, the radiofrequency characteristic A thereof is measured at a measuring point which is the radiofrequency-generator-side end of the radiofrequency feed line connected to the respective radiofrequency generator.
34. A plasma processing system comprising a plurality of plasma processing apparatuses,
each plasma processing apparatus comprising:
a plasma processing chamber having a plasma excitation electrode for exciting a plasma;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
a radiofrequency feeder connected to the plasma excitation electrode; and
a matching circuit having an input terminal and an output terminal, wherein the input terminal is connected to the radiofrequency generator via a radiofrequency feed line, whereas the output terminal is connected to the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator,
wherein a variation, defined by (Amax−Amin)/(Amax+Amin), between the maximum frequency Amax and the minimum frequency Amin among radiofrequency characteristics A of the plurality of plasma processing chambers has a predetermined value, wherein, in each plasma processing chamber, the radiofrequency characteristic A thereof is measured at a measuring point which is the input terminal connected to the corresponding radiofrequency feed line.
35. A plasma processing system according to claim 32 , wherein the predetermined value is less than 0.1.
36. A plasma processing system according to claim 33 , wherein the predetermined value is less than 0.1.
37. A plasma processing system according to claim 34 , wherein the predetermined value is less than 0.1.
38. A plasma processing system according to claim 32 , wherein each radiofrequency characteristic A is any one of a resonant frequency f, an impedance Ze at the frequency of the radiofrequency generator, a resistance Re at the frequency of the radiofrequency generator, and a reactance Xe at the frequency of the radiofrequency generator.
39. A plasma processing system according to claim 33 , wherein each radiofrequency characteristic A is any one of a resonant frequency f, an impedance Ze at the frequency of the radiofrequency generator, a resistance Re at the frequency of the radiofrequency generator, and a reactance Xe at the frequency of the radiofrequency generator.
40. A plasma processing system according to claim 34 , wherein each radiofrequency characteristic A is any one of a resonant frequency f, an impedance Ze at the frequency of the radiofrequency generator, a resistance Re at the frequency of the radiofrequency generator, and a reactance Xe at the frequency of the radiofrequency generator.
41. A plasma processing system according to claim 32 , wherein each radiofrequency characteristic A is a first series resonant frequency f0.
42. A plasma processing system according to claim 33 , wherein each radiofrequency characteristic A is a first series resonant frequency f0.
43. A plasma processing system according to claim 34 , wherein each radiofrequency characteristic A is a first series resonant frequency f0.
44. A plasma processing system according to claim 32 , wherein three times the first series resonant frequency f0 corresponding to each plasma processing chamber is larger than the frequency fe of the radiofrequency waves.
45. A plasma processing system according to claim 33 , wherein each plasma processing chamber has a measuring terminal for measuring the radiofrequency characteristic A thereof at the corresponding measuring point.
46. A plasma processing system according to claim 34 , wherein each plasma processing chamber has a measuring terminal for measuring the radiofrequency characteristic A thereof at the corresponding measuring point.
47. A plasma processing system according to claim 35 , wherein each plasma processing chamber has a measuring terminal for measuring the radiofrequency characteristic A thereof at the corresponding measuring point.
48. A plasma processing apparatus according to claim 44 , wherein each plasma processing chamber has a switch in the vicinity of the corresponding measuring point in which the switch electrically disconnects the measuring point from the measuring terminal and connects the radiofrequency feeder to the radiofrequency generator in a plasma excitation mode in which the plasma is excited, whereas the switch electrically connects the measuring point to the measuring terminal and disconnects the radiofrequency generator from the measuring point in a measuring mode in which the radiofrequency characteristic A of the corresponding plasma processing chamber is measured.
49. A plasma processing apparatus according to claim 45 , wherein each plasma processing chamber has a switch in the vicinity of the corresponding measuring point in which the switch electrically disconnects the measuring point from the measuring terminal and connects the radiofrequency feeder to the radiofrequency generator in a plasma excitation mode in which the plasma is excited, whereas the switch electrically connects the measuring point to the measuring terminal and disconnects the radiofrequency generator from the measuring point in a measuring mode in which the radiofrequency characteristic A of the corresponding plasma processing chamber is measured.
50. A plasma processing apparatus according to claim 46 , wherein each plasma processing chamber has a switch in the vicinity of the corresponding measuring point in which the switch electrically disconnects the measuring point from the measuring terminal and connects the radiofrequency feeder to the radiofrequency generator in a plasma excitation mode in which the plasma is excited, whereas the switch electrically connects the measuring point to the measuring terminal and disconnects the radiofrequency generator from the measuring point in a measuring mode in which the radiofrequency characteristic A of the corresponding plasma processing chamber is measured.
51. A performance validation system for a plasma processing apparatus according to claim 13 , the system comprising:
at least one client terminal; and
performance information providing means for providing performance information to said at least one client terminal,
wherein the performance information comprises standard operation information regarding general information of the plasma processing apparatus and operation and maintenance information regarding specific information of the plasma processing apparatus,
wherein said at least one client terminal has at least one function of requesting the display of performance information and uploading the operation and maintenance information to the performance information providing means.
52. A performance validation system for a plasma processing apparatus according to claim 14 , the system comprising:
at least one client terminal; and
performance information providing means for providing performance information to said at least one client terminal,
wherein the performance information comprises standard operation information regarding general information of the plasma processing apparatus and operation and maintenance information regarding specific information of the plasma processing apparatus,
wherein said at least one client terminal has at least one function of requesting the display of performance information and uploading the operation and maintenance information to the performance information providing means.
53. A performance validation system for a plasma processing apparatus according to claim 15 , the system comprising:
at least one client terminal; and
performance information providing means for providing performance information to said at least one client terminal,
wherein the performance information comprises standard operation information regarding general information of the plasma processing apparatus and operation and maintenance information regarding specific information of the plasma processing apparatus,
wherein said at least one client terminal has at least one function of requesting the display of performance information and uploading the operation and maintenance information to the performance information providing means.
54. A performance validation system according to claim 51 , wherein the performance information includes the variation of the radiofrequency characteristics A.
55. A performance validation system according to claim 52 , wherein the performance information includes the variation of the radiofrequency characteristics A.
56. A performance validation system according to claim 53 , wherein the performance information includes the variation of the radiofrequency characteristics A.
57. A performance validation system for a plasma processing system according to claim 32 , the system comprising:
at least one client terminal; and
performance information providing means for providing performance information to said at least one client terminal,
wherein the performance information comprises standard operation information regarding general information of the plasma processing apparatus and operation and maintenance information regarding specific information of the plasma processing apparatus,
wherein said at least one client terminal has at least one function of requesting the display of performance information and uploading the operation and maintenance information to the performance information providing means.
58. A performance validation system for a plasma processing system according to claim 33 , the system comprising:
at least one client terminal; and
performance information providing means for providing performance information to said at least one client terminal,
wherein the performance information comprises standard operation information regarding general information of the plasma processing apparatus and operation and maintenance information regarding specific information of the plasma processing apparatus,
wherein said at least one client terminal has at least one function of requesting the display of performance information and uploading the operation and maintenance information to the performance information providing means.
59. A performance validation system for a plasma processing system according to claim 33 , the system comprising:
at least one client terminal; and
performance information providing means for providing performance information to said at least one client terminal,
wherein the performance information comprises standard operation information regarding general information of the plasma processing apparatus and operation and maintenance information regarding specific information of the plasma processing apparatus,
wherein said at least one client terminal has at least one function of requesting the display of performance information and uploading the operation and maintenance information to the performance information providing means.
60. A performance validation system according to claim 57 , wherein the performance information includes the variation of the radiofrequency characteristics A.
61. A performance validation system according to claim 58 , wherein the performance information includes the variation of the radiofrequency characteristics A.
62. A performance validation system according to claim 59 , wherein the performance information includes the variation of the radiofrequency characteristics A.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/950,045 US20050061443A1 (en) | 2000-08-11 | 2004-09-24 | Plasma processing apparatus and system, performance validation system and inspection method therefor |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-245347 | 2000-08-11 | ||
JP2000245347A JP3723060B2 (en) | 2000-08-11 | 2000-08-11 | Plasma processing apparatus and performance confirmation system for plasma processing apparatus |
JP2000289488A JP3600143B2 (en) | 2000-09-22 | 2000-09-22 | Plasma processing apparatus, plasma processing system, their performance confirmation system, and inspection method |
JP2000-289488 | 2000-09-22 |
Related Child Applications (1)
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---|---|---|---|
US10/950,045 Division US20050061443A1 (en) | 2000-08-11 | 2004-09-24 | Plasma processing apparatus and system, performance validation system and inspection method therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
US20020038688A1 true US20020038688A1 (en) | 2002-04-04 |
Family
ID=26597916
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/925,579 Abandoned US20020038688A1 (en) | 2000-08-11 | 2001-08-09 | Plasma processing apparatus and system, performance validation system and inspection method therefor |
US10/950,045 Abandoned US20050061443A1 (en) | 2000-08-11 | 2004-09-24 | Plasma processing apparatus and system, performance validation system and inspection method therefor |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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US10/950,045 Abandoned US20050061443A1 (en) | 2000-08-11 | 2004-09-24 | Plasma processing apparatus and system, performance validation system and inspection method therefor |
Country Status (4)
Country | Link |
---|---|
US (2) | US20020038688A1 (en) |
EP (2) | EP1179834A3 (en) |
KR (1) | KR100450100B1 (en) |
TW (1) | TW511158B (en) |
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TWI786464B (en) * | 2019-11-12 | 2022-12-11 | 大陸商北京北方華創微電子裝備有限公司 | Inductively coupled plasma system |
CN114121581A (en) * | 2020-08-27 | 2022-03-01 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus |
Also Published As
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EP1720197A1 (en) | 2006-11-08 |
EP1179834A3 (en) | 2005-11-23 |
KR20020014702A (en) | 2002-02-25 |
KR100450100B1 (en) | 2004-09-24 |
EP1179834A2 (en) | 2002-02-13 |
US20050061443A1 (en) | 2005-03-24 |
TW511158B (en) | 2002-11-21 |
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