US20030150383A1 - Semiconductor device or thin-film transistor manufacturing apparatus and manufacturing method - Google Patents
Semiconductor device or thin-film transistor manufacturing apparatus and manufacturing method Download PDFInfo
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- US20030150383A1 US20030150383A1 US10/371,700 US37170003A US2003150383A1 US 20030150383 A1 US20030150383 A1 US 20030150383A1 US 37170003 A US37170003 A US 37170003A US 2003150383 A1 US2003150383 A1 US 2003150383A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 239000010408 film Substances 0.000 claims abstract description 336
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 183
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 30
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 25
- 238000012546 transfer Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 36
- 230000008569 process Effects 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 238000004140 cleaning Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 22
- 239000012535 impurity Substances 0.000 description 13
- 239000010410 layer Substances 0.000 description 11
- 239000004925 Acrylic resin Substances 0.000 description 9
- 229920000178 Acrylic resin Polymers 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
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- -1 of boron Chemical class 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- 239000003870 refractory metal Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001609 comparable effect Effects 0.000 description 1
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- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
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- 229910000077 silane Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
Definitions
- the present invention relates to a semiconductor device such as a thin-film transistor manufacturing apparatus, and a thin-film transistor manufacturing method using the apparatus.
- FIG. 1 is a cross-sectional view showing a structure of the thin-film transistor to be used as pixel display switching devices in active matrix display panels. A bottom-gate type is shown in this figure.
- the gate electrode 2 has both sides in a tapered shape widening toward the transparent substrate 1 .
- a silicon oxide film 4 is formed through a silicon nitride film 3 .
- the silicon nitride film 3 prevents impurities contained in the transparent substrate 1 from penetrating an active region (to be described later), and the silicon oxide film 4 functions as a gate insulating film.
- a polycrystalline silicon film 5 so as to straddle the gate electrode 2 .
- the polycrystalline silicon film 5 becomes the active region of the thin-film transistor.
- the polycrystalline silicon film 5 is positioned a stopper 6 of an insulating material, such as silicon oxide.
- a portion of the polycrystalline silicon film 5 covered by the stopper 6 becomes a channel region 5 c , and other portions of the polycrystalline silicon film 5 become a source region 5 s and a drain region 5 d .
- the silicon oxide film 7 and silicon nitride film 8 serve as interlayer insulating films to protect the polycrystalline silicon film 5 that includes the source region 5 s and drain region 5 d.
- Contact holes 9 are formed at predetermined locations in the silicon oxide film 7 and silicon nitride film 8 on the source region 5 s and drain region 5 d .
- a source electrode 10 s and a drain electrode 10 d which connect to the source region 5 s and drain region 5 d , are positioned at the contact holes 9 .
- an acrylic resin layer 11 On the silicon nitride film 8 , on which the source electrode 10 s and drain electrode 10 d are positioned, an acrylic resin layer 11 , which is transparent to visible light, is formed.
- the acrylic resin layer 11 planarizes the surface by filling in the unevenness caused by the gate electrode 2 and stopper 6 .
- a contact hole 12 is formed in the acrylic resin layer 11 on the source electrode 10 s .
- a transparent electrode 13 such as of indium tin oxide (ITO), that connects to the source electrode 10 s through the contact hole 12 is then positioned so as to extend on the acrylic resin layer 11 .
- the transparent electrode 13 forms a pixel electrode in a liquid crystal display panel.
- the polycrystalline silicon film 5 is formed with a sufficiently large crystal grain diameter so that it functions as the active region of the thin-film transistor.
- a known method for forming a large crystal grain diameter of the polycrystalline silicon film 5 is laser annealing using an excimer laser. In laser annealing, amorphous silicon is formed onto the silicon oxide film 4 , which becomes a gate insulating film, and after the hydrogen contained in the amorphous silicon is first removed through a low temperature heat treatment, the silicon is irradiated with the excimer laser and is initially melted so that the silicon crystallizes. Since portions on the transparent substrate 1 reaching high temperatures are localized due to the use of this sort of laser annealing method, a glass substrate having a low melting point can be used for the transparent substrate 1 .
- Formation of the silicon oxide film and silicon nitride film comprising the gate insulating film and interlayer insulating film is also possible at a low temperature of 400° C. or less and employs a highly flexible plasma CVD method. Since the plasma CVD method also makes it possible for the formation of amorphous silicon films, the formation of the amorphous silicon film, which becomes the polycrystalline silicon film 5 , is normally performed by the same apparatus in succession to the formation of the gate insulating film.
- the impurities prevent carrier movement in the channel region 5 c and cause the operating characteristics to deteriorate.
- the plasma CVD method when the gate insulating film and the amorphous silicon film, which becomes the polycrystalline silicon film 5 , are formed in succession within the same film formation chamber, it becomes easy to contaminate the amorphous silicon film with the residual reactant gas used in the formation of the gate insulating film.
- the same film is formed on the inner wall of the film formation chamber.
- the semiconductor device manufacturing apparatus of the present invention comprises a first film formation chamber for depositing in succession at least two types of insulating films onto a substrate, a second film formation chamber for depositing a semiconductor film onto the substrate, and a transfer chamber for connecting the first film formation chamber to the second film formation chamber and for transferring the substrate from the first film formation chamber to the second film formation chamber, or from the second film formation chamber to the first film formation chamber, where one of the first or second film formation chambers performs a film formation process in succession to a film formation process of the other chamber.
- the semiconductor device manufacturing apparatus comprises the first film formation chamber for forming a first material film on the substrate, and the second film formation chamber for forming, after the first material film, a second material film unlike the first material film, where a ratio of a number of the first film formation chambers to that of the second film formation chambers is proportional to a ratio of the time required for film formation in the first film formation chamber to the time required for film formation in the second film formation chamber so that the first film formation chambers and the second film formation chambers are disposed with their numbers in a predetermined ratio.
- the time required for film formation in the first film formation chambers is longer than the time required for film formation in the second film formation chambers, and in correspondence a plurality of the first film formation chambers having a number greater than that of the second film formation chambers and performing film formation at a predetermined time difference from each other.
- the gate insulating films for example, can be formed in the first film formation chamber, and the semiconductor film, for example, which becomes the active region, can be formed in the second film formation chamber. Since the semiconductor film is formed in a dedicated film formation chamber, it becomes difficult for the residual reactant gas, which is used in the formation of other films, to contaminate the semiconductor film.
- the thin-film transistor manufacturing method comprises a first process for forming a gate electrode on one principal plane of the substrate, a second process for forming gate insulating films covering the gate electrode on the substrate, a third process for forming the semiconductor film of an island shape on the gate insulating films so as to straddle the gate insulating films, and a fourth process for forming interlayer insulating films on the semiconductor film, where the second process processes in parallel a plurality of the substrates in a plurality of first film formation chambers at a predetermined time difference shorter than the time required for film formation, and the third process processes the substrates in succession in a single second film formation chamber at a time shorter than the film formation time in the second film formation chamber.
- the gate insulating film is formed in the plurality of first film formation chambers, and the semiconductor film is formed in the single second film formation chamber. Since the semiconductor film is formed in the dedicated chamber, there is no contamination during film formation by the residual reactant gas used for forming the other films. Furthermore, since a plurality of first film formation chambers are disposed for the gate insulating film, for which film formation becomes long, utilization efficiency of each film formation chamber improves when the gate insulating film and semiconductor film are formed in succession.
- the silicon film is formed as the semiconductor film in the dedicated film formation chamber, only the silicon film adheres to the inner wall of the film formation chamber or electrodes, so that even in a case where silicon films are formed in succession, the impurities do not discharge from the film adhering to the inner wall or electrodes of the film formation chamber. Therefore, contamination by impurities that prevent the migration of carriers to the active region is inhibited for the case of the thin-film transistor, thus preventing the degradation of the operating characteristics of the thin-film transistor. Furthermore, while the silicon film, which becomes the active region, is formed in a film formation chamber different from that for the gate insulating films, a drop in productivity can be prevented with an increase in time required for film formation kept to a minimum.
- FIG. 1 is a cross-sectional view showing a structure of a conventional thin-film transistor.
- FIG. 2 is a schematic diagram showing a structure of a thin-film transistor manufacturing apparatus of the present invention.
- FIG. 3 is a timing diagram illustrating operations of the thin-film transistor manufacturing apparatus of the present invention.
- FIGS. 4A, 4B, 4 C, 4 D, 4 E, and 4 F are cross-sectional views showing respective processes of a thin-film transistor manufacturing method of the present invention.
- FIG. 2 is a schematic diagram showing a structure of the thin-film transistor manufacturing apparatus of the present invention
- FIG. 3 is a timing diagram illustrating the timing of the film formation process.
- a first to fourth film formation chambers PC 1 to PC 4 are disposed so as to surround a transfer chamber TC with each housing a substrate S.
- the first to third film formation chambers PC 1 to PC 3 successively form a silicon nitride film and a silicon oxide film onto the substrates S, and the fourth film chamber PC 4 forms an amorphous silicon film.
- the silicon nitride film is formed by receiving a supply of SiH 4 , NH 3 , and N 2
- the silicon oxide film is formed by receiving a supply of SiH 4 and N 2 O.
- the amorphous silicon film is formed by receiving a supply of silane and hydrogen.
- a load lock LL is disposed in parallel with film formation chambers PC 1 to PC 4 in the periphery of the transfer chamber TC, and temporarily houses the substrate S to be loaded into the transfer chamber TC or the substrate S to be taken out after the film formation process. After a predetermined number (for example 12 substrates per lot) of substrates S are loaded from outside the apparatus in the loading operation, the load lock LL vents the outside air that was loaded with the substrates S and replaces it with an inert gas, such as nitrogen, so as to prevent outside air from flowing into the transfer chamber TC. In an unloading process, after the film formation process completes, the load lock LL holds the substrates S until they approach room temperature so as to prevent sudden changes in temperature of the substrates S.
- the transfer chamber TC transfers the substrates S between the film formation chambers PC 1 to PC 4 and the load lock LL in accordance with the film formation operation of the film formation chambers PC 1 to PC 4 . Namely, in a first transfer operation, substrates S are transferred from the load lock LL to the first through third film formation chambers PC 1 to PC 3 , and in a second transfer operation, the substrates S are transferred from the first through third film formation chambers PC 1 to PC 3 to the fourth film formation chamber PC 4 . In a third transfer operation, the substrate S is transferred from the fourth film formation chamber PC 4 to the load lock LL. Except during the various transfer operations, shutter mechanisms provide shielding between the transfer chamber TC and the film formation chambers PC 1 to PC 4 , and between the transfer chamber TC and the load lock LL.
- substrates S are loaded one at a time while respectively staggered by a time duration L 0 into the first through third film formation chambers PC 1 to PC 3 , and the silicon nitride film and silicon oxide film are formed on the substrates S at a film formation time L 1 .
- the time difference L 0 is set to be approximately 1 ⁇ 3 of the film formation time L 1 .
- the substrates S after having undergone the film formation process at the first through third film formation chambers PC 1 to PC 3 , are loaded one at a time into the fourth film formation chamber PC 4 , and onto the substrates S are formed the amorphous silicon film at time L 2 .
- This film formation time L 2 is set to be shorter than the time difference L 0 of the film formation processes of the first through third film formation chambers PC 1 to PC 3 .
- the film formation process completes at the fourth film formation chamber PC 4 at time L 2 , which is 1 ⁇ 3 or less than time L 1 of the film formation process at the first through third film formation chambers PC 1 to PC 3 , three times the number of substrates S can be processed in comparison to the first through third film formation chambers PC 1 to PC 3 .
- the substrates S to be processed in parallel at the first through third film formation chambers PC 1 to PC 3 can be processed in succession at the fourth film formation chamber PC 4 .
- FIGS. 4A to 4 F are cross-sectional views of individual processes illustrating the manufacturing method of thin-film transistors of the present invention. These drawings show the same bottom-gate type as FIG. 1.
- a high melting point metal such as chromium or molybdenum
- refractory metal such as chromium or molybdenum
- the refractory metal film 34 is patterned in a predetermined shape to form a gate electrode 22 .
- This patterning process uses taper etching to form a tapered shape so that both sides of the gate electrode 22 widen toward the transparent substrate 21 .
- the silicon nitride film through plasma CVD to form a silicon nitride film 23 , which prevents the precipitation of impurity ions from the transparent substrate 21 .
- a silicon oxide film is applied to form a silicon oxide film 24 , which forms the gate insulating films together with the silicon nitride film 23 .
- the formation of the silicon nitride film 23 and silicon oxide film 24 is performed using the respective first through third film formation chambers PC 1 to PC 3 shown in FIG. 2. Silicon is then applied on the silicon oxide film 24 through the same plasma CVD method so as to form an amorphous silicon film 25 a .
- the formation of the amorphous silicon film 25 a is performed using the fourth film formation chamber PC 4 of the apparatus shown in FIG. 2.
- the ratio of the processing times becomes approximately 3:1. Therefore, as shown in FIG. 2, a plurality of transparent substrates 21 are processed in succession at high efficiency. Forming the amorphous silicon film 25 a in the dedicated film formation chamber reduces the amount of impurities contaminating the amorphous silicon film 25 a .
- the oxygen concentration is reduced from approximately 10 20 /cm 3 to 10 19 /cm 3 when comparing the case in which the silicon oxide film 24 and amorphous silicon film 25 a are formed in the same film formation chamber with the case in which the amorphous silicon film 25 a is formed in a separate film formation chamber.
- the amorphous silicon film 25 a that was formed on the silicon oxide film 24 is heated to discharge the hydrogen contained within the film to outside the film. In this heating process, the hydrogen concentration in the amorphous silicon film 25 a is reduced to 1 atoms % or less.
- an excimer laser is aimed at the silicon film 25 a to heat the amorphous silicon until it melts, then the silicon crystallizes to form a polycrystalline silicon film 25 .
- silicon oxide is formed on the polycrystalline silicon film 25 to form a silicon oxide film 35 .
- the silicon oxide film 35 is then patterned to match the shape of the gate electrode 22 , and a stopper 26 is formed to overlap the gate electrode 22 .
- the stopper 26 In the formation of the stopper 26 , mask deviation can be eliminated by forming a resist layer to cover the silicon oxide film 35 and exposing the resist layer from the underside of the transparent substrate 21 with the gate electrode 22 as a mask. With the stopper 26 as the mask, the polycrystalline silicon film 25 is then doped with either P-type or N-type ions corresponding to the type of transistor to be formed. Namely, the polycrystalline silicon film 25 not covered by the stopper 26 is doped with P-type ions, such as of boron, when forming a P-channel transistor, or N-type ions, such as of phosphorous, when forming an N-channel transistor. This doping process forms regions exhibiting P-type or N-type conductivity in the polycrystalline silicon film 25 except in the part covered by the stopper 26 . These regions on both sides of the stopper 26 become a source region 25 s and a drain region 25 d.
- P-type ions such as of boron
- the excimer laser is aimed at the polycrystalline silicon film 25 , on which the source region 25 s and drain region 25 d have been formed, to heat the silicon without melting. This activates the impurity ions within the source region 25 s and drain region 25 d .
- the polycrystalline silicon film 25 is then patterned into a island shape while leaving a predetermined width on both sides of the stopper 26 (gate electrode 22 ) so as to separate the individual transistor.
- Silicon oxide and silicon nitride are formed in succession through plasma CVD on the polycrystalline silicon film 25 .
- This forms two interlayer insulating films of a silicon oxide film 27 and a silicon nitride film 28 .
- the silicon oxide film 27 and silicon nitride film 28 after being formed, are heated in a nitrogen atmosphere so that the hydrogen ions contained in the silicon nitride film 28 are introduced to the polycrystalline silicon film 25 .
- the crystal defects within the polycrystalline silicon film 25 are filled by the hydrogen ions.
- Contact holes 29 are formed so as to pass through the silicon oxide film 27 and silicon nitride film 28 to correspond to the source region 25 s and drain region 25 d , and at the contact holes 29 are formed a source electrode 30 s and a drain electrode 30 d of a metal, such as aluminum.
- the source electrode 30 s and drain electrode 30 d are formed, for example, by patterning sputtered aluminum on the silicon nitride film 28 on which the contact holes 29 were formed. Next, an acrylic resin solution is applied and baked on the silicon nitride film 28 , on which the source electrode 30 s and drain electrode 30 d were formed, to form an acrylic resin layer 31 .
- the acrylic resin layer 31 planarizes the surface by filling in the unevenness caused by the stopper 26 , source electrode 30 s , and drain electrode 30 d . Furthermore, a contact hole 32 is formed so as to pass through the acrylic resin layer 31 on the source electrode 30 s , and at the contact hole 32 is formed a transparent electrode 33 , such as of ITO, to connect to the source electrode 30 s .
- the transparent electrode 33 is formed, for example, by patterning sputtered ITO on the acrylic resin layer 31 , on which the contact hole 32 was formed.
Abstract
First through fourth film formation chambers PC1 to PC4 are disposed in the periphery of a transfer chamber TC. If, for example, the ratio of the time required to form gate insulating films to the time required to form the silicon film as a semiconductor film is 1:3, a silicon nitride film and silicon oxide film are formed in the first through third film formation films PC1 to PC3 to become gate insulating films, and an amorphous silicon layer is formed in the fourth film formation chamber PC4 to become an active region. This makes it possible to perform formation of the amorphous silicon layer, which requires film cleaning, in a film formation chamber different from the film formation chamber for other films, and to manufacture thin-film transistors at high productivity.
Description
- 1. Field of the Invention
- The present invention relates to a semiconductor device such as a thin-film transistor manufacturing apparatus, and a thin-film transistor manufacturing method using the apparatus.
- 2. Description of the Prior Art
- FIG. 1 is a cross-sectional view showing a structure of the thin-film transistor to be used as pixel display switching devices in active matrix display panels. A bottom-gate type is shown in this figure.
- On a surface of an insulating
transparent substrate 1 is positioned agate electrode 2 of a refractory metal, such as tungsten or chromium. Thegate electrode 2 has both sides in a tapered shape widening toward thetransparent substrate 1. On thetransparent substrate 1 on which thegate electrode 2 is positioned, asilicon oxide film 4 is formed through asilicon nitride film 3. Thesilicon nitride film 3 prevents impurities contained in thetransparent substrate 1 from penetrating an active region (to be described later), and thesilicon oxide film 4 functions as a gate insulating film. On thesilicon oxide film 4 is formed apolycrystalline silicon film 5 so as to straddle thegate electrode 2. Thepolycrystalline silicon film 5 becomes the active region of the thin-film transistor. - Or the
polycrystalline silicon film 5 is positioned astopper 6 of an insulating material, such as silicon oxide. A portion of thepolycrystalline silicon film 5 covered by thestopper 6 becomes achannel region 5 c, and other portions of thepolycrystalline silicon film 5 become asource region 5 s and adrain region 5 d. On thepolycrystalline silicon film 5, on which thestopper 5 is formed, is formed asilicon oxide film 7 and asilicon nitride film 8. Thesilicon oxide film 7 andsilicon nitride film 8 serve as interlayer insulating films to protect thepolycrystalline silicon film 5 that includes thesource region 5 s anddrain region 5 d. -
Contact holes 9 are formed at predetermined locations in thesilicon oxide film 7 andsilicon nitride film 8 on thesource region 5 s anddrain region 5 d. Asource electrode 10 s and adrain electrode 10 d, which connect to thesource region 5 s anddrain region 5 d, are positioned at thecontact holes 9. On thesilicon nitride film 8, on which the source electrode 10 s anddrain electrode 10 d are positioned, anacrylic resin layer 11, which is transparent to visible light, is formed. Theacrylic resin layer 11 planarizes the surface by filling in the unevenness caused by thegate electrode 2 and stopper 6. - A
contact hole 12 is formed in theacrylic resin layer 11 on thesource electrode 10 s. Atransparent electrode 13, such as of indium tin oxide (ITO), that connects to thesource electrode 10 s through thecontact hole 12 is then positioned so as to extend on theacrylic resin layer 11. Thetransparent electrode 13 forms a pixel electrode in a liquid crystal display panel. - In the above-mentioned thin-film transistor, a plurality of which are arranged in a matrix on the
transparent substrate 1 together with pixel electrodes, image data supplied to thedrain electrode 10 d is impressed onto the respective pixel electrode in response to a scanning control signal that is impressed on thegate electrode 2. - The
polycrystalline silicon film 5 is formed with a sufficiently large crystal grain diameter so that it functions as the active region of the thin-film transistor. A known method for forming a large crystal grain diameter of thepolycrystalline silicon film 5 is laser annealing using an excimer laser. In laser annealing, amorphous silicon is formed onto thesilicon oxide film 4, which becomes a gate insulating film, and after the hydrogen contained in the amorphous silicon is first removed through a low temperature heat treatment, the silicon is irradiated with the excimer laser and is initially melted so that the silicon crystallizes. Since portions on thetransparent substrate 1 reaching high temperatures are localized due to the use of this sort of laser annealing method, a glass substrate having a low melting point can be used for thetransparent substrate 1. - Formation of the silicon oxide film and silicon nitride film comprising the gate insulating film and interlayer insulating film is also possible at a low temperature of 400° C. or less and employs a highly flexible plasma CVD method. Since the plasma CVD method also makes it possible for the formation of amorphous silicon films, the formation of the amorphous silicon film, which becomes the
polycrystalline silicon film 5, is normally performed by the same apparatus in succession to the formation of the gate insulating film. - When impurities are added during film formation in the
polycrystalline silicon film 5, which forms the active region of the thin-film transistor, the impurities prevent carrier movement in thechannel region 5 c and cause the operating characteristics to deteriorate. In the plasma CVD method, when the gate insulating film and the amorphous silicon film, which becomes thepolycrystalline silicon film 5, are formed in succession within the same film formation chamber, it becomes easy to contaminate the amorphous silicon film with the residual reactant gas used in the formation of the gate insulating film. Usually, during the formation of the gate insulating film, the same film is formed on the inner wall of the film formation chamber. With this sort of film formed, when the plasma for forming the amorphous silicon film within the film formation chamber is excited, the impurities are discharged from the film formed on the inner wall of the film formation chamber. Since the impurities discharged within the film formation chamber are taken into the amorphous silicon film, it is difficult to prevent the contamination by impurities even though the reactant gas within the film formation chamber is completely discharged. - It is therefore an object of the present invention to make it difficult for impurities to contaminate the active layer during formation of the semiconductor device, such as the thin-film transistor, and to provide an apparatus and manufacturing method to enable the manufacture of the thin-film transistor at high efficiency.
- The semiconductor device manufacturing apparatus of the present invention comprises a first film formation chamber for depositing in succession at least two types of insulating films onto a substrate, a second film formation chamber for depositing a semiconductor film onto the substrate, and a transfer chamber for connecting the first film formation chamber to the second film formation chamber and for transferring the substrate from the first film formation chamber to the second film formation chamber, or from the second film formation chamber to the first film formation chamber, where one of the first or second film formation chambers performs a film formation process in succession to a film formation process of the other chamber.
- Furthermore, in another aspect of the present invention, the semiconductor device manufacturing apparatus comprises the first film formation chamber for forming a first material film on the substrate, and the second film formation chamber for forming, after the first material film, a second material film unlike the first material film, where a ratio of a number of the first film formation chambers to that of the second film formation chambers is proportional to a ratio of the time required for film formation in the first film formation chamber to the time required for film formation in the second film formation chamber so that the first film formation chambers and the second film formation chambers are disposed with their numbers in a predetermined ratio.
- In another aspect of the present invention, in the above-mentioned semiconductor device manufacturing apparatus, the time required for film formation in the first film formation chambers is longer than the time required for film formation in the second film formation chambers, and in correspondence a plurality of the first film formation chambers having a number greater than that of the second film formation chambers and performing film formation at a predetermined time difference from each other.
- According to the present invention, the gate insulating films, for example, can be formed in the first film formation chamber, and the semiconductor film, for example, which becomes the active region, can be formed in the second film formation chamber. Since the semiconductor film is formed in a dedicated film formation chamber, it becomes difficult for the residual reactant gas, which is used in the formation of other films, to contaminate the semiconductor film.
- In another aspect of the present invention, the thin-film transistor manufacturing method comprises a first process for forming a gate electrode on one principal plane of the substrate, a second process for forming gate insulating films covering the gate electrode on the substrate, a third process for forming the semiconductor film of an island shape on the gate insulating films so as to straddle the gate insulating films, and a fourth process for forming interlayer insulating films on the semiconductor film, where the second process processes in parallel a plurality of the substrates in a plurality of first film formation chambers at a predetermined time difference shorter than the time required for film formation, and the third process processes the substrates in succession in a single second film formation chamber at a time shorter than the film formation time in the second film formation chamber.
- According to the present invention, the gate insulating film is formed in the plurality of first film formation chambers, and the semiconductor film is formed in the single second film formation chamber. Since the semiconductor film is formed in the dedicated chamber, there is no contamination during film formation by the residual reactant gas used for forming the other films. Furthermore, since a plurality of first film formation chambers are disposed for the gate insulating film, for which film formation becomes long, utilization efficiency of each film formation chamber improves when the gate insulating film and semiconductor film are formed in succession.
- According to the present invention having the above-mentioned features, since the silicon film is formed as the semiconductor film in the dedicated film formation chamber, only the silicon film adheres to the inner wall of the film formation chamber or electrodes, so that even in a case where silicon films are formed in succession, the impurities do not discharge from the film adhering to the inner wall or electrodes of the film formation chamber. Therefore, contamination by impurities that prevent the migration of carriers to the active region is inhibited for the case of the thin-film transistor, thus preventing the degradation of the operating characteristics of the thin-film transistor. Furthermore, while the silicon film, which becomes the active region, is formed in a film formation chamber different from that for the gate insulating films, a drop in productivity can be prevented with an increase in time required for film formation kept to a minimum.
- FIG. 1 is a cross-sectional view showing a structure of a conventional thin-film transistor.
- FIG. 2 is a schematic diagram showing a structure of a thin-film transistor manufacturing apparatus of the present invention.
- FIG. 3 is a timing diagram illustrating operations of the thin-film transistor manufacturing apparatus of the present invention.
- FIGS. 4A, 4B,4C, 4D, 4E, and 4F are cross-sectional views showing respective processes of a thin-film transistor manufacturing method of the present invention.
- FIG. 2 is a schematic diagram showing a structure of the thin-film transistor manufacturing apparatus of the present invention, and FIG. 3 is a timing diagram illustrating the timing of the film formation process. These drawings show a case having four film formation chambers.
- A first to fourth film formation chambers PC1 to PC4 are disposed so as to surround a transfer chamber TC with each housing a substrate S. The first to third film formation chambers PC1 to PC3 successively form a silicon nitride film and a silicon oxide film onto the substrates S, and the fourth film chamber PC4 forms an amorphous silicon film. For example, at the first to third film formation chambers PC1 to PC3, the silicon nitride film is formed by receiving a supply of SiH4, NH3, and N2, and the silicon oxide film is formed by receiving a supply of SiH4 and N2 O. At the fourth film formation chamber PC4, the amorphous silicon film is formed by receiving a supply of silane and hydrogen.
- A load lock LL is disposed in parallel with film formation chambers PC1 to PC4 in the periphery of the transfer chamber TC, and temporarily houses the substrate S to be loaded into the transfer chamber TC or the substrate S to be taken out after the film formation process. After a predetermined number (for example 12 substrates per lot) of substrates S are loaded from outside the apparatus in the loading operation, the load lock LL vents the outside air that was loaded with the substrates S and replaces it with an inert gas, such as nitrogen, so as to prevent outside air from flowing into the transfer chamber TC. In an unloading process, after the film formation process completes, the load lock LL holds the substrates S until they approach room temperature so as to prevent sudden changes in temperature of the substrates S.
- The transfer chamber TC transfers the substrates S between the film formation chambers PC1 to PC4 and the load lock LL in accordance with the film formation operation of the film formation chambers PC1 to PC4. Namely, in a first transfer operation, substrates S are transferred from the load lock LL to the first through third film formation chambers PC1 to PC3, and in a second transfer operation, the substrates S are transferred from the first through third film formation chambers PC1 to PC3 to the fourth film formation chamber PC4. In a third transfer operation, the substrate S is transferred from the fourth film formation chamber PC4 to the load lock LL. Except during the various transfer operations, shutter mechanisms provide shielding between the transfer chamber TC and the film formation chambers PC1 to PC4, and between the transfer chamber TC and the load lock LL.
- As shown in FIG. 3, substrates S are loaded one at a time while respectively staggered by a time duration L0 into the first through third film formation chambers PC1 to PC3, and the silicon nitride film and silicon oxide film are formed on the substrates S at a film formation time L1. The time difference L0 is set to be approximately ⅓ of the film formation time L1. As a result, at the first through third film formation chambers PC1 to PC3, the film formation process for one substrate S completes at the passage of every time duration L0. The substrates S, after having undergone the film formation process at the first through third film formation chambers PC1 to PC3, are loaded one at a time into the fourth film formation chamber PC4, and onto the substrates S are formed the amorphous silicon film at time L2. This film formation time L2 is set to be shorter than the time difference L0 of the film formation processes of the first through third film formation chambers PC1 to PC3. In other words, since the film formation process completes at the fourth film formation chamber PC4 at time L2, which is ⅓ or less than time L1 of the film formation process at the first through third film formation chambers PC1 to PC3, three times the number of substrates S can be processed in comparison to the first through third film formation chambers PC1 to PC3. As a result, the substrates S to be processed in parallel at the first through third film formation chambers PC1 to PC3 can be processed in succession at the fourth film formation chamber PC4.
- In this sort of manufacturing apparatus, equivalent film formation is possible simply by increasing, compared to the case where the three films are formed in the same film formation chamber, the total manufacturing time for the formation of the silicon nitride film, silicon oxide film, and amorphous silicon film by the time required for transferring the substrates S. Since only the amorphous silicon film is formed at this time at the fourth film formation chamber PC4, any contamination of the amorphous silicon film with impurities can be prevented.
- FIGS. 4A to4F are cross-sectional views of individual processes illustrating the manufacturing method of thin-film transistors of the present invention. These drawings show the same bottom-gate type as FIG. 1.
- (a) First Process (FIG. 4A)
- On an insulating
transparent substrate 21 is sputtered a high melting point metal (refractory metal), such as chromium or molybdenum, to form arefractory metal film 34. Therefractory metal film 34 is patterned in a predetermined shape to form agate electrode 22. This patterning process uses taper etching to form a tapered shape so that both sides of thegate electrode 22 widen toward thetransparent substrate 21. - (b) Second Process (FIG. 4B)
- On the
transparent substrate 21 is applied the silicon nitride film through plasma CVD to form asilicon nitride film 23, which prevents the precipitation of impurity ions from thetransparent substrate 21. Next, in the same film formation chamber using the same plasma CVD method, a silicon oxide film is applied to form asilicon oxide film 24, which forms the gate insulating films together with thesilicon nitride film 23. The formation of thesilicon nitride film 23 andsilicon oxide film 24 is performed using the respective first through third film formation chambers PC1 to PC3 shown in FIG. 2. Silicon is then applied on thesilicon oxide film 24 through the same plasma CVD method so as to form anamorphous silicon film 25 a. The formation of theamorphous silicon film 25 a is performed using the fourth film formation chamber PC4 of the apparatus shown in FIG. 2. With the time required for the formation ofsilicon nitride film 23 andsilicon oxide film 24 at, for example, approximately 270 seconds and the time required for the formation of theamorphous silicon film 25 a at, for example, approximately 90 seconds, the ratio of the processing times becomes approximately 3:1. Therefore, as shown in FIG. 2, a plurality oftransparent substrates 21 are processed in succession at high efficiency. Forming theamorphous silicon film 25 a in the dedicated film formation chamber reduces the amount of impurities contaminating theamorphous silicon film 25 a. On the basis of actual measured values, it was confirmed that the oxygen concentration is reduced from approximately 1020/cm3 to 1019/cm3 when comparing the case in which thesilicon oxide film 24 andamorphous silicon film 25 a are formed in the same film formation chamber with the case in which theamorphous silicon film 25 a is formed in a separate film formation chamber. - (c) Third Process (FIG. 4C)
- The
amorphous silicon film 25 a that was formed on thesilicon oxide film 24 is heated to discharge the hydrogen contained within the film to outside the film. In this heating process, the hydrogen concentration in theamorphous silicon film 25 a is reduced to 1 atoms % or less. After the hydrogen is discharged, an excimer laser is aimed at thesilicon film 25 a to heat the amorphous silicon until it melts, then the silicon crystallizes to form apolycrystalline silicon film 25. Next, through the plasma CVD method, silicon oxide is formed on thepolycrystalline silicon film 25 to form asilicon oxide film 35. Thesilicon oxide film 35 is then patterned to match the shape of thegate electrode 22, and astopper 26 is formed to overlap thegate electrode 22. In the formation of thestopper 26, mask deviation can be eliminated by forming a resist layer to cover thesilicon oxide film 35 and exposing the resist layer from the underside of thetransparent substrate 21 with thegate electrode 22 as a mask. With thestopper 26 as the mask, thepolycrystalline silicon film 25 is then doped with either P-type or N-type ions corresponding to the type of transistor to be formed. Namely, thepolycrystalline silicon film 25 not covered by thestopper 26 is doped with P-type ions, such as of boron, when forming a P-channel transistor, or N-type ions, such as of phosphorous, when forming an N-channel transistor. This doping process forms regions exhibiting P-type or N-type conductivity in thepolycrystalline silicon film 25 except in the part covered by thestopper 26. These regions on both sides of thestopper 26 become asource region 25 s and adrain region 25 d. - (d) Fourth Process (FIG. 4D)
- The excimer laser is aimed at the
polycrystalline silicon film 25, on which thesource region 25 s and drainregion 25 d have been formed, to heat the silicon without melting. This activates the impurity ions within thesource region 25 s and drainregion 25 d. Thepolycrystalline silicon film 25 is then patterned into a island shape while leaving a predetermined width on both sides of the stopper 26 (gate electrode 22) so as to separate the individual transistor. - (e) Fifth Process (FIG. 4E)
- Silicon oxide and silicon nitride are formed in succession through plasma CVD on the
polycrystalline silicon film 25. This forms two interlayer insulating films of asilicon oxide film 27 and asilicon nitride film 28. Thesilicon oxide film 27 andsilicon nitride film 28, after being formed, are heated in a nitrogen atmosphere so that the hydrogen ions contained in thesilicon nitride film 28 are introduced to thepolycrystalline silicon film 25. As a result, the crystal defects within thepolycrystalline silicon film 25 are filled by the hydrogen ions. - (f) Sixth Process (FIG. 4F)
- Contact holes29 are formed so as to pass through the
silicon oxide film 27 andsilicon nitride film 28 to correspond to thesource region 25 s and drainregion 25 d, and at the contact holes 29 are formed asource electrode 30 s and adrain electrode 30 d of a metal, such as aluminum. The source electrode 30 s and drainelectrode 30 d are formed, for example, by patterning sputtered aluminum on thesilicon nitride film 28 on which the contact holes 29 were formed. Next, an acrylic resin solution is applied and baked on thesilicon nitride film 28, on which thesource electrode 30 s and drainelectrode 30 d were formed, to form anacrylic resin layer 31. Theacrylic resin layer 31 planarizes the surface by filling in the unevenness caused by thestopper 26,source electrode 30 s, and drainelectrode 30 d. Furthermore, acontact hole 32 is formed so as to pass through theacrylic resin layer 31 on thesource electrode 30 s, and at thecontact hole 32 is formed atransparent electrode 33, such as of ITO, to connect to thesource electrode 30 s. Thetransparent electrode 33 is formed, for example, by patterning sputtered ITO on theacrylic resin layer 31, on which thecontact hole 32 was formed. - The above-mentioned first through sixth processes form the bottom-gate thin-film transistor.
- It should be noted that although four film formation chambers were used in this embodiment to form the gate insulating films and the semiconductor film at a 3:1 ratio, the number of film formation chambers is not limited to four. A comparable effect can be obtained even with three, or five or more film formation chambers disposed provided the film formation chambers are used in accordance with the ratio of the time required to form the gate insulating films to the time required to form the semiconductor film.
- While there has been described what are at present considered to be preferred embodiments of the invention, it will be understood that various modifications may be made thereto, and it is intended that the appended claims cover all such modifications as fall within the true spirit and scope of the invention.
Claims (10)
1. A semiconductor device manufacturing apparatus comprising:
a first film formation chamber for depositing in succession at least two types of insulating films onto a substrate;
a second film formation chamber for depositing a semiconductor film onto the substrate; and
a transfer chamber for connecting said first film formation chamber to said second film formation chamber and for transferring the substrate from said first film formation chamber to said second film formation chamber, or from said second film formation chamber to said first film formation chamber;
one of said first or second film formation chamber performs a film formation process in succession to a film formation process of the other chamber.
2. The semiconductor device manufacturing apparatus according to claim 1 wherein:
a plurality of said first film formation chambers are disposed in accordance with a ratio of a time required for film formation in said first film formation chamber to a time required for film formation in said second film formation chamber, and the plurality of said first film formation chambers perform film formation processing staggered at a predetermined time difference.
3. The semiconductor device manufacturing apparatus according to claim 1 wherein:
said first and second film formation chambers are disposed so that a number of said first film formation chambers and a number of said second film formation chambers have a predetermined ratio other than 1 in accordance to a predetermined ratio other than 1 of the time required for film formation in said first film formation chamber to the time required for film formation in said second film formation chamber.
4. The semiconductor device manufacturing apparatus according to claim 3 wherein:
the time required for film formation in said first film formation chamber is longer than the time required for film formation in said second film formation chamber, and in correspondence a plurality of said first film formation chambers having a number greater than that of said second film formation chambers and performing film formation at a predetermined time difference from each other.
5. The semiconductor device manufacturing apparatus according to claim 3 wherein:
said time difference of film formation processes at a plurality of respective said first film formation chambers is set to be equal or longer than the time required for film formation in said second film formation chambers.
6. The semiconductor device manufacturing apparatus according to claim 1 wherein:
the insulating films formed at said first film formation chamber and the semiconductor film formed at said second film formation chamber together form part of a thin-film transistor.
7. The semiconductor device manufacturing apparatus comprising:
the first film formation chamber for forming a first material film on the substrate; and
the second film formation chamber for forming, after said first material film, a second material film unlike said first material film;
a ratio of a number of said first film formation chambers to that of said second film formation chambers is proportional to a ratio of the time required for film formation in said first film formation chamber to the time required for film formation in said second film formation chamber so that said first film formation chambers and said second film formation chambers are disposed with their numbers in a predetermined ratio.
8. The semiconductor device manufacturing apparatus according to claim 7 wherein:
the time required for film formation in said first film formation chambers is longer than the time required for film formation in said second film formation chambers, and in correspondence a plurality of said first film formation chambers having a number greater than that of said second film formation chambers and performing film formation at a predetermined time difference from each other.
9. The semiconductor device manufacturing apparatus according to claim 8 wherein:
said time difference of film formation processes at a plurality of respective said first film formation chambers is set to be equal or longer than the time required for film formation in said second film formation chambers.
10. The semiconductor device manufacturing apparatus according to claim 7 wherein:
said first material film formed at said first film formation chamber is a silicon nitride film and/or a silicon oxide film, said second material film formed at said second film formation chamber is a semiconductor film, and together form part of a thin-film transistor.
Priority Applications (1)
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US10/371,700 US20030150383A1 (en) | 1997-10-14 | 2003-02-22 | Semiconductor device or thin-film transistor manufacturing apparatus and manufacturing method |
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JP9280360A JPH11121754A (en) | 1997-10-14 | 1997-10-14 | Device and method for manufacturing thin-film transistor |
JPHEI9-280360 | 1997-10-14 | ||
US09/169,833 US6103557A (en) | 1997-10-14 | 1998-10-12 | Semiconductor device or thin-film transistor manufacturing apparatus and manufacturing method |
US59702600A | 2000-06-20 | 2000-06-20 | |
US10/371,700 US20030150383A1 (en) | 1997-10-14 | 2003-02-22 | Semiconductor device or thin-film transistor manufacturing apparatus and manufacturing method |
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US59702600A Continuation | 1997-10-14 | 2000-06-20 |
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US09/169,833 Expired - Lifetime US6103557A (en) | 1997-10-14 | 1998-10-12 | Semiconductor device or thin-film transistor manufacturing apparatus and manufacturing method |
US10/371,700 Abandoned US20030150383A1 (en) | 1997-10-14 | 2003-02-22 | Semiconductor device or thin-film transistor manufacturing apparatus and manufacturing method |
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US09/169,833 Expired - Lifetime US6103557A (en) | 1997-10-14 | 1998-10-12 | Semiconductor device or thin-film transistor manufacturing apparatus and manufacturing method |
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US (2) | US6103557A (en) |
JP (1) | JPH11121754A (en) |
KR (1) | KR100560586B1 (en) |
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JP2001229512A (en) * | 2000-02-10 | 2001-08-24 | Tdk Corp | Thin film magnetic head and method of manufacture |
US7271489B2 (en) * | 2003-10-15 | 2007-09-18 | Megica Corporation | Post passivation interconnection schemes on top of the IC chips |
JP2002141512A (en) * | 2000-11-06 | 2002-05-17 | Advanced Display Inc | Patterning method of thin film, tft array substrate using the patterning method, and manufacturing method of the tft array substrate |
JP2002167661A (en) * | 2000-11-30 | 2002-06-11 | Anelva Corp | Magnetic multilayered film deposition system |
KR100428804B1 (en) * | 2001-02-23 | 2004-04-29 | 삼성전자주식회사 | Method of forming a layer in an integrated circuit device process, a method for fabricating a trench isolaton using the same and a trench isolation structure |
US7521805B2 (en) * | 2004-10-12 | 2009-04-21 | Megica Corp. | Post passivation interconnection schemes on top of the IC chips |
KR20150010065A (en) * | 2013-07-18 | 2015-01-28 | 삼성디스플레이 주식회사 | Method of forming an oxide semiconductor device, and method of manufacturing a display device having an oxide semiconductor device |
JP7311553B2 (en) * | 2021-03-29 | 2023-07-19 | 株式会社Kokusai Electric | SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND PROGRAM |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4483651A (en) * | 1980-08-14 | 1984-11-20 | Tokyo Ohka Kogyo Kabushiki Kaisha | Automatic apparatus for continuous treatment of leaf materials with gas plasma |
US4592306A (en) * | 1983-12-05 | 1986-06-03 | Pilkington Brothers P.L.C. | Apparatus for the deposition of multi-layer coatings |
US5327624A (en) * | 1986-07-16 | 1994-07-12 | Mitsubishi Denki Kabushiki Kaisha | Method for forming a thin film on a semiconductor device using an apparatus having a load lock |
US5834068A (en) * | 1996-07-12 | 1998-11-10 | Applied Materials, Inc. | Wafer surface temperature control for deposition of thin films |
US5849629A (en) * | 1995-10-31 | 1998-12-15 | International Business Machines Corporation | Method of forming a low stress polycide conductors on a semiconductor chip |
US6204519B1 (en) * | 1996-03-10 | 2001-03-20 | Semicondutor Energy Laboratory Co., Ltd. | Thin film semiconductor device |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5243202A (en) * | 1990-04-25 | 1993-09-07 | Casio Computer Co., Ltd. | Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type |
JP2690613B2 (en) * | 1990-10-11 | 1997-12-10 | キヤノン株式会社 | Method and apparatus for forming multilayer film |
JPH05182923A (en) * | 1991-05-28 | 1993-07-23 | Semiconductor Energy Lab Co Ltd | Laser annealing method |
JPH06224392A (en) * | 1993-01-25 | 1994-08-12 | Hitachi Ltd | Semiconductor device and manufacture thereof |
JPH07211651A (en) * | 1994-01-26 | 1995-08-11 | Matsushita Electric Ind Co Ltd | Film deposition |
US5527567A (en) * | 1994-09-02 | 1996-06-18 | Ceram Incorporated | Metalorganic chemical vapor deposition of layered structure oxides |
KR100300263B1 (en) * | 1995-08-04 | 2001-12-17 | 구사마 사부로 | Manufacturing method of thin film transistor, manufacturing method of active matrix substrate and liquid crystal display device |
-
1997
- 1997-10-14 JP JP9280360A patent/JPH11121754A/en active Pending
-
1998
- 1998-10-12 US US09/169,833 patent/US6103557A/en not_active Expired - Lifetime
- 1998-10-13 KR KR1019980042741A patent/KR100560586B1/en not_active IP Right Cessation
-
2003
- 2003-02-22 US US10/371,700 patent/US20030150383A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4483651A (en) * | 1980-08-14 | 1984-11-20 | Tokyo Ohka Kogyo Kabushiki Kaisha | Automatic apparatus for continuous treatment of leaf materials with gas plasma |
US4592306A (en) * | 1983-12-05 | 1986-06-03 | Pilkington Brothers P.L.C. | Apparatus for the deposition of multi-layer coatings |
US5327624A (en) * | 1986-07-16 | 1994-07-12 | Mitsubishi Denki Kabushiki Kaisha | Method for forming a thin film on a semiconductor device using an apparatus having a load lock |
US5849629A (en) * | 1995-10-31 | 1998-12-15 | International Business Machines Corporation | Method of forming a low stress polycide conductors on a semiconductor chip |
US6204519B1 (en) * | 1996-03-10 | 2001-03-20 | Semicondutor Energy Laboratory Co., Ltd. | Thin film semiconductor device |
US5834068A (en) * | 1996-07-12 | 1998-11-10 | Applied Materials, Inc. | Wafer surface temperature control for deposition of thin films |
Also Published As
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KR19990037052A (en) | 1999-05-25 |
KR100560586B1 (en) | 2006-05-25 |
US6103557A (en) | 2000-08-15 |
JPH11121754A (en) | 1999-04-30 |
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