US20030174031A1 - Microwave monolithic integrated circuit assembly with multi-orientation pyrolytic graphite heat-dissipating assembly - Google Patents
Microwave monolithic integrated circuit assembly with multi-orientation pyrolytic graphite heat-dissipating assembly Download PDFInfo
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- US20030174031A1 US20030174031A1 US10/099,221 US9922102A US2003174031A1 US 20030174031 A1 US20030174031 A1 US 20030174031A1 US 9922102 A US9922102 A US 9922102A US 2003174031 A1 US2003174031 A1 US 2003174031A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
A microwave monolithic integrated circuit assembly includes a microwave monolithic integrated circuit having an MMIC circuit plane and having a first region of relatively high heat production and a second region of relatively low heat production. A heat-dissipating assembly is in thermal contact with the microwave monolithic integrated circuit. The heat-dissipating assembly has at least two pieces of pyrolytic graphite embedded within a casing. The pieces of pyrolytic graphite include a first piece of pyrolytic graphite underlying the first region and having a high-thermal-conductivity x-direction of the first piece lying within about 20 degrees of a perpendicular to the MMIC circuit plane, and a second piece of pyrolytic graphite underlying the second region and having a high-thermal-conductivity x-direction of the second piece lying within about 20 degrees of the MMIC circuit plane. The heat-dissipating assembly is preferably fabricated by hot isostatic pressing.
Description
- This invention relates to a microwave monolithic integrated circuit (MMIC) assembly and, more particularly, to such an MMC assembly wherein the MMIC is supported on a heat-dissipating assembly having multiple pieces of pyrolytic graphite with their high-thermal-conductivity x-directions oriented for optimal heat dissipation from the MMIC.
- A microwave monolithic integrated circuit (MMIC) is a microwave circuit in which one or more discrete microwave devices are mounted on a substrate. External connections and interconnections between the devices are provided on the substrate. The connections are provided both for low-frequency signals and for the microwave signals being processed. The microwave devices in the MMIC may be of any type.
- In a power amplifier or other high-power MMIC, the microwave devices include microwave circuits that process a high-power microwave signal. A large amount of heat is generated as a by-product of the microwave signal processing. The heat must be redistributed and ultimately conducted away, or the resulting increased temperature may exceed the maximum operating temperature limit of the microwave device. If the maximum operating temperature limit is exceeded, the performance of the microwave device is degraded or the device could fail.
- The MMIC may be mounted on a heat-management structure that facilitates the initial stages of the removal of the heat from the microwave devices and the substrate to which they are mounted. Historically, the heat-management structure was made of a ceramic such as aluminum oxide, a metal, or a composite material. As the heat outputs have risen and the sizes of the microwave devices have been reduced, the available heat-management materials have not provided the required heat-removal capabilities.
- More recently, it has been proposed to utilize encapsulated pyrolytic graphite as the heat-management material. Pyrolytic graphite is an anisotropic material having a high-thermal-conductivity x-direction in which the thermal conductivity is at least 5-10 times greater than many alternative heat-management materials. Pyrolytic graphite also has a low thermal expansion coefficient, reducing the differential thermal strains and stresses between the heat-management structure and the MMIC.
- Although pyrolytic graphite offers advantages for use as a heat-management material, it has not been optimized for use with devices such as the MMIC assembly. There is therefore a need for a design in which the pyrolytic graphite is optimized for use in the MMIC assembly, so that its potential may be more fully realized in dissipating heat and maintaining the MMIC within its operating temperature limit. The present invention fulfills this need, and further provides related advantages.
- The present invention provides a microwave monolithic integrated circuit (MMIC) assembly in which encapsulated pyrolytic graphite is used as a heat-dissipation material underlying the MMIC substrate. The spatial orientations of the pyrolytic graphite core are selected for optimal dissipation of heat, recognizing the spatial variation in heat production by the MMIC. The heat-dissipation assembly is readily fabricated as a closed, integral unit that is highly resistant to oxidation, corrosion and other adverse environmental influences.
- In accordance with the invention, a microwave monolithic integrated circuit (MMIC) assembly comprises a microwave monolithic integrated circuit lying in an MMIC circuit plane. The MMIC has a first region of relatively high heat production and a second region of relatively low heat production. The first region typically corresponds to the location on the MMIC substrate of a high-heat-output device such as a power amplifier.
- A heat-dissipating assembly is in thermal contact with the MMIC. The heat-dissipating assembly has a core comprising at least two pieces of pyrolytic graphite embedded within a casing and bonded to an interior wall of the casing. The pieces of pyrolytic graphite comprise a first piece of pyrolytic graphite underlying (i.e., in vertical alignment with) the first region of relatively high heat production and having a high-thermal-conductivity x-direction of the first piece lying within about 20 degrees of a perpendicular (and preferably substantially perpendicular) to the MMIC circuit plane, and a second piece of pyrolytic graphite underlying the second region of relatively low heat production and having a high-thermal-conductivity x-direction of the second piece lying within about 20 degrees of (and preferably substantially parallel to) the MMIC circuit plane.
- The microwave monolithic integrated circuit may include multiple first regions and multiple second regions. In that case, the heat-dissipating assembly includes multiple first pieces of pyrolytic graphite underlying the respective multiple first regions, and multiple second pieces of pyrolytic graphite underlying the respective multiple second regions. The heat-dissipating assembly may further include one or more third pieces of pyrolytic graphite that do not correspond to and underlie the first region of the MMIC, but which have the high-thermal-conductivity x-direction of the pyrolytic graphite within about 20 degrees of the perpendicular (and preferably substantially perpendicular) to the MMIC plane.
- In the MMIC assembly, the casing is preferably a metal such as aluminum, copper, and silver, and alloys thereof. The casing preferably comprises a first preform contacting a top of the core, a second preform contacting a bottom of the core, and a lateral wall enclosing a lateral periphery of the core. The casing may be hermetic or non-hermetic. A hermetic casing is preferred, to protect the pyrolytic graphite against environmental attack. The heat-dissipating assembly desirably has no structural layers that are organic materials. Minor amounts of organic contaminants may be present without adversely affecting the functionality of the heat-dissipating assembly, but there are no layers or structural elements made of organic materials intentionally present in the heat-dissipating assembly.
- A method for fabricating a microwave monolithic integrated circuit (MMIC) assembly comprises the steps of furnishing a microwave monolithic integrated circuit lying in an MMIC circuit plane and having a first region of relatively high heat production and a second region of relatively low heat production. Separately, a heat-dissipating assembly is fabricated which has a relatively large dimension lying in a heat-dissipating-assembly plane and a relatively small dimension lying perpendicular to the heat-dissipating-assembly plane. The heat-dissipating assembly has a core comprising at least two pieces of pyrolytic graphite embedded within a casing and bonded to an interior wall of the casing. The pieces of pyrolytic graphite comprise a first piece of pyrolytic graphite having a high-thermal-conductivity x-direction of the first piece lying substantially perpendicular to the heat-dissipating-assembly plane, and a second piece of pyrolytic graphite having a high-thermal-conductivity x-direction of the second piece lying substantially parallel to the heat-dissipating-assembly plane. The microwave monolithic integrated circuit is thereafter assembled to the heat-dissipating assembly with the MMIC circuit plane parallel to the heat-dissipating-assembly plane and with the first piece of pyrolytic graphite underlying the first region of relatively high heat production and the second piece of pyrolytic graphite underlying the second region of relatively low heat production. Other features as discussed above may be utilized in relation to this method.
- The fabricating of the heat-dissipating assembly preferably includes furnishing the two pieces of pyrolytic graphite and a set of disassembled elements of a casing, assembling the pieces of pyrolytic graphite within the interior of the disassembled elements of the casing positioned so as to form an initial assembly, placing the initial assembly into an evacuated interior of an elevated-temperature pressing apparatus, and heating and simultaneously applying pressure to the initial assembly using the elevated temperature pressing apparatus until a resulting heat-dissipating assembly is substantially fully dense. This heating-and-applying pressure step is desirably accomplished by hot isostatic pressing.
- The present approach places the first pieces of the pyrolytic graphite, with the high-thermal-conductivity x-direction near to perpendicular to the MMIC circuit plane, underlying the first regions of the MMIC that have the highest heat production. Heat dissipation from these first regions is thereby facilitated. The second pieces, in which the high-thermal-conductivity x-direction lies near to parallel to the MMIC circuit plane, dissipates heat laterally so that the heat is may be more readily conducted out of the heat-dissipating assembly. The pyrolytic graphite has a low coefficient of thermal expansion in both the x-direction and a z-direction lying perpendicular to the heat-dissipating-assembly plane.
- Other features and advantages of the present invention will be apparent from the following more detailed description of the preferred embodiment, taken in conjunction with the accompanying drawings, which illustrate, by way of example, the principles of the invention. The scope of the invention is not, however, limited to this preferred embodiment.
- FIG. 1 is a schematic side-sectional view of a microwave monolithic integrated circuit;
- FIG. 2 is a schematic side sectional view of a first embodiment of a microwave monolithic integrated circuit assembly incorporating the microwave monolithic integrated circuit of FIG. 1 and a multi-orientation heat-dissipating assembly;
- FIG. 3 is a schematic perspective view of a piece of pyrolytic graphite;
- FIG. 4 is a schematic side sectional view of a second embodiment of a microwave monolithic integrated circuit assembly incorporating the microwave monolithic integrated circuit of FIG. 1 and a multi-orientation heat-dissipating assembly; and
- FIG. 5 is a block flow diagram of a preferred approach for preparing a microwave monolithic integrated circuit assembly.
- FIG. 1 depicts a generally planar microwave monolithic integrated circuit (MMIC)20. The MMIC 20 includes at least one, and here shown as two, heat-producing
microwave devices 22 mounted to a generallyplanar substrate 24. An example of a heat-producingmicrowave device 22 is a solid-state power amplifier. Thesubstrate 24 includes a generallyplanar board 26, which itself may have some heat-management capability, and may includeother layers 28 lying between theboard 26 and thedevices 22 and/or lying on theboard 26 and extending between thedevices 22.Such layers 28 may include waveguides, striplines, low-frequency interconnect lines, external interconnects, and the like. Optionally, there may be aprotective cover 32 supported on thesubstrate 24 and covering thedevices 22 to protect them from mechanical and environmental damage. Although theMMIC 20 is typically not perfectly planar, theMMIC 20 may be described as lying in anMMIC circuit plane 30 that has aperpendicular direction 31 relative thereto. This structure ofMMICs 20 is known in the art. - The
MMIC 20 has afirst region 34 of relatively high heat production and asecond region 36 of relatively low heat production. (“High” heat production and “low” heat production are referenced in relation to each other, and do not imply any particular numerical values. “High” is greater than “low”.) Thefirst region 34 typically underlies the heat-producingdevice 22. (Not every microelectronic structure used in MMICs produces significant amounts of heat, and therefore not every microelectronic structure is associated with afirst region 34.) In FIG. 1, there are twofirst regions 34, one underlying each of the heat-producingdevices 22, and severalsecond regions 36. The present invention is in part concerned with removing heat from thefirst region 34 as rapidly as possible. - FIG. 2 depicts a microwave monolithic integrated circuit (MMIC)
assembly 40, wherein theMMIC 20 is assembled with and in thermal contact with a generally planar heat-dissipatingassembly 42. As illustrated, the heat-dissipatingassembly 42 is in direct physical contact with theMMIC 20 to achieve thermal communication. Equivalently for the present purposes, the heat-dissipatingassembly 42 may be in thermal communication with theMMIC 20 by other means, such as an intermediate solid thermal conductor, a heat pipe, or the like. The heat-dissipating assembly has a core 44 comprising at least two pieces ofpyrolytic graphite interior wall 50 of acasing 52. Thecasing 52 typically includes afirst preform 70 contacting a top 72 of the core 44, asecond preform 74 contacting a bottom 76 of the core 44, and a lateral 78 wall enclosing alateral periphery 80 of thecore 44. Theelements core 44 along theinterior wall 50. The portions of thefirst preform 70 and thesecond preform 74 that underlie the heat-producingdevices 22 are preferably made as thin as possible consistent with structural integrity, so as to provide as little thermal-impedance as possible. Thecasing 52 may comprise flat solid pieces of material, or shaped and structured pieces of material as shown in U.S. Pat. No. 6,075,701, whose disclosure is incorporated by reference. - The
casing 52 may be hermetic or non-hermetic, but is preferably hermetic to provide complete mechanical and environmental protection to thecore 44. The casing is preferably a metal with a high thermal conductivity, such as aluminum, silver, or copper, or alloys thereof. It is strongly preferred that the heat-dissipatingassembly 42 have no structural layers comprising organic materials therein. Such organic materials within the heat-dissipatingassembly 42, if present, would be prone to producing organic vapors during fabrication or service, which could adversely affect the fabrication and/or the functionality of the heat-dissipatingassembly 42. There may be some minor amount of organic contaminant within the heat-dissipatingassembly 42, but no organic layers or other organic structures are intentionally present. - The pieces of
pyrolytic graphite first piece 46 of pyrolytic graphite underlying thefirst region 34 of relatively high heat production, and asecond piece 48 of pyrolytic graphite underlying thesecond region 36 of relatively low heat production. (As used herein, “underlying” means aligned under or below, in a vertical direction parallel to thedirection 31, and also parallel to thedirection 66 discussed subsequently.) Pyrolytic graphite is a form of graphite typically prepared by chemical vapor deposition and post processing of carbon. As shown in FIG. 3, the resultingpyrolytic graphite article 54 is generally planar with two orthogonal directions x1 and x2 lying in a plane of high thermal conductivity. Because these two directions x1 and x2 are substantially identical in respect to thermal conductivity and thermal expansion, they are referred to herein as the high-thermal-conductivity x-direction of the pyrolytic graphite. That is, the x-direction of the pyrolytic graphite is any direction lying in the plane defined by the x1 and x2 high-thermal-conductivity directions illustrated in FIG. 3. A z-direction is perpendicular to the plane defined by the x1 and x2 directions. - The pyrolytic graphite has a thermal conductivity of greater than about 1500 watts per meter-K, and typically about 1700-1750 watts per meter-K, in the high-thermal-conductivity x-direction lying in the plane of high thermal conductivity. Suitable pieces of pyrolytic graphite for use in the present invention are available commercially from suppliers such as B. F. Goodrich, Inc. The pyrolytic graphite has a much lower thermal conductivity, on the order of about 10-15 watts per meter-K, in the z-direction. (“High” thermal conductivity and “low” thermal conductivity are referenced in relation to each other, and do not imply any particular numerical values. “High” is greater than “low”.)
- In the heat-dissipating
assembly 42, the orientations of thepieces pyrolytic graphite 54 are described relative to a heat-dissipating-assembly plane 64 and itsperpendicular direction 66. The heat-dissipatingassembly plane 64 is the plane of the generally planar heat-dissipatingassembly 42. When theMMIC 20 and the heat-dissipatingassembly 42 are assembled together to form the MMIC assembly, theplanes directions - The
first piece 46 ofpyrolytic graphite 54 is oriented so that the high-thermal-conductivity x-direction of thefirst piece 46 lies within about 20 degrees of the perpendicular 66 to the heat-dissipating assembly plane 64 (and thence within about 20 degrees of the perpendicular 31 to theMMIC circuit plane 30 in the MMIC assembly 40). If the high-thermal-conductivity x-direction lies more than about 20 degrees from the perpendicular 66 to the heat-dissipating assembly plane 64 (and thence the perpendicular 31 to the MMIC circuit plane 30), its effectiveness in distributing heat downwardly from thefirst region 34 of high heat production is compromised. Preferably, the high-thermal conductivity x-direction of thefirst piece 46 lies substantially perpendicular to the heat-dissipating-assembly plane 64 (and thence the MMIC circuit plane 30), or, alternatively stated, parallel to theperpendicular directions 66 and 31). In FIGS. 2 and 4, the orientation of the high-thermal-conductivity x-direction is indicated schematically in thefirst piece 46 by double-ended arrows oriented generally parallel to theperpendicular directions - The
second piece 48 ofpyrolytic graphite 54 is oriented so that the high-thermal-conductivity x-direction of thesecond piece 48 lies within about 20 degrees of the heat-dissipating-assembly plane 66 (and thence theMMIC circuit plane 30 in the MMIC assembly 40). If the high-thermal-conductivity x-direction lies more than about 20 degrees from the heat-dissipating-assembly plane 66 (and thence the MMIC circuit plane 30), its effectiveness in conducting heat laterally from thefirst region 34 of high heat production is compromised. Preferably, the high-thermal conductivity x-direction of thesecond piece 48 lies substantially parallel to the heat-dissipating-assembly plane 66 (and thence the MMIC circuit plane 30). In FIGS. 2 and 4, the orientation of the high-thermal-conductivity x-direction is indicated schematically in thesecond piece 48 by double-ended arrows oriented generally parallel to theplanes - Additionally, and as illustrated in FIG. 4, the heat-dissipating
assembly 42 may further include athird piece 56 ofpyrolytic graphite 54 that does not underlie thefirst region 34 of relatively high heat production but has the high-thermal-conductivity x-direction of thethird piece 56 within about 20 degrees of the perpendicular to (and preferably substantially perpendicular to) theMMIC plane 30. In FIG. 4, the orientation of the high-thermal-conductivity x-direction is indicated schematically in thethird piece 56 by double-ended arrows oriented generally parallel to theperpendicular directions - Additionally, and as also illustrated in FIG. 4, the heat-dissipating
assembly 42 may further include afourth piece 58 ofpyrolytic graphite 54 that does not underlie thefirst region 34 of relatively high heat production but has the high-thermal-conductivity x-direction of thethird piece 56 at some arbitrarily selected angle relative to theMMIC plane 30. In FIG. 2, the orientation of the high-thermal-conductivity x-direction is indicated schematically in thefourth piece 58 by double-ended arrows oriented at an arbitrarily selected angle relative to theperpendicular directions - The locations and widths of the
second piece 48, the third piece 56 (where present), and the fourth piece 58 (where present) may be selected to maximize the heat flow from the heat-producing first region (or regions) 34 to a bottom 60 or to aside 62 of thecasing 52. From the bottom 60 and theside 62 of thecasing 52, the heat is conducted to an external radiator or other larger heat sink by any appropriate thermally conductive structure. The locations and widths of thesecond piece 48, the third piece 56 (where present), and the fourth piece 58 (where present) are typically selected according to a thermal analysis, such as a finite element thermal analysis, specific to aparticular MMIC 20 and the characteristics of its heat-producingmicrowave devices 22, taking into account its dimensions, materials of construction, types and locations of the heat-producing microwave devices, and other structural features. The present approach is not concerned with this process and any specific arrangement of thepieces - FIG. 5 illustrates a preferred approach to fabricating the
MMIC assembly 40. TheMMIC 20 is fabricated by conventional techniques specific to the selectedMMIC 20 and furnished, numeral 90. Separately and independently, the heat-dissipating assembly is fabricated, numeral 92. To perform thisfabrication 92, thepieces pyrolytic graphite 54. The selection of the locations, sizes, and orientations of thepieces MMIC 20, typically using a computer-based heat flow analysis such as a finite element analysis. The disassembled casing elements, typically including theelements lateral wall 78 may be formed of a piece of the same material as thepreforms preforms - These elements of the heat-dissipating
assembly 42, furnished instep 94, are assembled as an initial assembly, numeral 96. That is, thepyrolytic graphite pieces preforms - This initial assembly is hot pressed to form the heat-dissipating assembly, numeral98. In the preferred approach, the initial assembly is placed into a container such as a steel can that is initially closed on one end. The initial assembly is placed into the can through the open end. The interior of the can is evacuated, such as by placing the entire can into a vacuum chamber and evacuating the vacuum chamber. Preferably, the interior of the can is heated during the evacuation to a temperature of about 500° F. to about 600° F. to degas the interior of the can and the initial assembly. While the interior of the can is evacuated, an end closure is welded in place, such as by using a commercial TIG welder. The evacuation of the interior of the can removes gaseous contaminants that otherwise might interfere with the intimate surface contact of the
interior wall 50 of thecasing 52, and thepyrolytic graphite pieces - The evacuated and sealed can, with the initial assembly therein, is placed into a hot isostatic pressing (HIP) apparatus and hot isostatically pressed, thereby hot isostatically pressing the initial assembly inside the can. In hot isostatic pressing, the article being hot isostatically pressed, here the can and the initial assembly inside the can, are heated to elevated temperature under an applied external pressure (while the interior of the can remains evacuated). In a preferred approach where the
casing 52 is 6061 aluminum, the hot isostatic pressing is performed at a temperature of about 950° F. to about 1050° F., and an applied external pressure of from about 15,000 to about 60,000 pounds per square inch, in a cycle requiring 2 hours. - Heating to and cooling from the hot isostatic pressing temperature are performed in a quasi-equilibrium manner, so that the heat-dissipating assembly remains at approximately the same temperature throughout. The larger the initial assembly, the slower the heating rate. In a typical case, however, the heating rate to, and the cooling rate from, the hot isostatic pressing temperature is from about 5 to about 6° F. per minute.
- The quasi-equilibrium cooling is important in achieving a final structure where there is little or no residual thermal stresses between the
casing 52 and thepyrolytic graphite piece - The attention paid to minimizing residual thermal stresses within the heat-dissipating
assembly 42 allows the heat-dissipatingassembly 42 to be made by hot isostatic pressing, hot pressing, or other elevated temperature technique. The pressing technique produces an intimate physical contact between, and bonding between, theelements casing 54, and between these elements of thecasing 54 and thepyrolytic graphite pieces MMIC assembly 40 are therefore fully satisfactory. - The hot pressing98 may followed by an optional heat treating. If the material chosen for the
casing 52 requires heat treatment to achieve its desired properties—such as a quenching and aging treatment—that heat treatment is performed. The heat treatment may also include a final normalizing (i.e., slow cooling) treatment to aid in minimizing residual thermal stresses. - The heat-dissipating
assembly 42 is optionally final machined, and optionally final processed, as may be required for aparticular MMIC assembly 40. In final machining, features such as the mounting holes and any cavities are machined into thecasing 52. In final processing, the heat-dissipating assembly is coated, plated (as with gold), cleaned, deburred, or otherwise final processed. - The MMIC circuit, prepared separately in
step 90, is thereafter assembled with and affixed to the heat-dissipatingassembly 42 by any operable technique, numeral 100. The affixing may be accomplished, for example, using a curable adhesive, brazing, or the like. -
MMIC assemblies 40 have been prepared by the approach discussed above and have been found highly satisfactory. - Although a particular embodiment of the invention has been described in detail for purposes of illustration, various modifications and enhancements may be made without departing from the spirit and scope of the invention. Accordingly, the invention is not to be limited except as by the appended claims.
Claims (20)
1. A microwave monolithic integrated circuit assembly, comprising:
a microwave monolithic integrated circuit lying in an MMIC circuit plane and having a first region of relatively high heat production and a second region of relatively low heat production; and
a heat-dissipating assembly in thermal contact with the microwave monolithic integrated circuit, the heat-dissipating assembly comprising a casing and a core, the a core comprising at least two pieces of pyrolytic graphite embedded within the casing and bonded to an interior wall of the casing, the at least two pieces of pyrolytic graphite comprising
a first piece of pyrolytic graphite underlying the first region of relatively high heat production and having a high-thermal-conductivity x-direction of the first piece lying within about 20 degrees of a perpendicular to the MMIC circuit plane, and
a second piece of pyrolytic graphite underlying the second region of relatively low heat production and having a high-thermal-conductivity x-direction of the second piece lying within about 20 degrees of the MMIC circuit plane.
2. The microwave monolithic integrated circuit assembly of claim 1 , wherein the casing is a metal.
3. The microwave monolithic integrated circuit assembly of claim 1 , wherein the casing comprises a metal selected from the group consisting of aluminum, copper, and silver, and alloys thereof.
4. The microwave monolithic integrated circuit assembly of claim 1 , wherein the casing is hermetic.
5. The microwave monolithic integrated circuit assembly of claim 1 , wherein the heat-dissipating assembly has no structural layers comprising organic materials therein.
6. The microwave monolithic integrated circuit assembly of claim 1 , wherein
the microwave monolithic integrated circuit includes multiple first regions and multiple second regions, and
the heat-dissipating assembly includes
multiple first pieces of pyrolytic graphite underlying the respective multiple first regions, and
multiple second pieces of pyrolytic graphite underlying the respective multiple second regions.
7. The microwave monolithic integrated circuit assembly of claim 1 , wherein the heat-dissipating assembly further includes
a third piece of pyrolytic graphite that does not underlie the first region of relatively high heat production and has the high-thermal-conductivity x-direction of the third piece within about 20 degrees of the perpendicular to the MMIC plane.
8. The microwave monolithic integrated circuit assembly of claim 1 , wherein the casing comprises
a first preform contacting a top of the core,
a second preform contacting a bottom of the core, and
a lateral wall enclosing a lateral periphery of the core.
9. A microwave monolithic integrated circuit assembly, comprising:
a microwave monolithic integrated circuit lying in an MMIC circuit plane and having a first region of relatively high heat production and a second region of relatively low heat production; and
a heat-dissipating assembly in thermal contact with the microwave monolithic integrated circuit, the heat-dissipating assembly having a core comprising at least two pieces of pyrolytic graphite embedded within a casing and bonded to an interior wall of the casing, the at least two pieces of pyrolytic graphite comprising
a first piece of pyrolytic graphite underlying the first region of relatively high heat production and having a high-thermal-conductivity x-direction of the first piece lying substantially perpendicular to the MMIC circuit plane,
a second piece of pyrolytic graphite underlying the second region of relatively low heat production and having a high-thermal-conductivity x-direction of the second piece lying substantially parallel to the MMIC circuit plane.
10. The microwave monolithic integrated circuit assembly of claim 9 , wherein the casing comprises
a first preform contacting a top of the core,
a second preform contacting a bottom of the core, and
a lateral wall enclosing a lateral periphery of the core.
11. The microwave monolithic integrated circuit assembly of claim 9 , wherein the casing is a metal.
12. The microwave monolithic integrated circuit assembly of claim 9 , wherein the casing comprises a metal selected from the group consisting of aluminum, copper, and silver, and alloys thereof.
13. The microwave monolithic integrated circuit assembly of claim 9 , wherein the casing is hermetic.
14. The microwave monolithic integrated circuit assembly of claim 9 , wherein the heat-dissipating assembly has no structural layers comprising organic materials therein.
15. The microwave monolithic integrated circuit assembly of claim 9 , wherein
the microwave monolithic integrated circuit includes multiple first regions and multiple second regions, and
the heat-dissipating assembly includes
multiple first pieces of pyrolytic graphite underlying the respective multiple first regions, and
multiple second pieces of pyrolytic graphite underlying the respective multiple second regions.
16. The microwave monolithic integrated circuit assembly of claim 9 , wherein the heat-dissipating assembly further includes
a third piece of pyrolytic graphite that does not underlie the first region of relatively high heat production and has the high-thermal-conductivity x-direction of the third piece substantially perpendicular to the MMIC plane.
17. A method for fabricating a microwave monolithic integrated circuit assembly, comprising the steps of:
furnishing a microwave monolithic integrated circuit lying in an MMIC circuit plane and having a first region of relatively high heat production and a second region of relatively low heat production;
fabricating a heat-dissipating assembly which has a relatively large dimension lying in a heat-dissipating-assembly plane and a relatively small dimension lying perpendicular to the heat-dissipating-assembly plane, the heat-dissipating assembly having a core comprising at least two pieces of pyrolytic graphite embedded within a casing and bonded to an interior wall of the casing, the at least two pieces of pyrolytic graphite comprising
a first piece of pyrolytic graphite having a high-thermal-conductivity x-direction of the first piece lying substantially perpendicular to the heat-dissipating-assembly plane, and
a second piece of pyrolytic graphite having a high-thermal-conductivity x-direction of the second piece lying substantially parallel to the heat-dissipating-assembly plane; and
assembling the microwave monolithic integrated circuit to the heat-dissipating assembly with the MMIC circuit plane parallel to the heat-dissipating-assembly plane and with the first piece of pyrolytic graphite underlying the first region of relatively high heat production and the second piece of pyrolytic graphite underlying the second region of relatively low heat production.
18. The method of claim 17 , wherein the casing comprises
a first preform contacting a top of the core,
a second preform contacting a bottom of the core, and
a lateral wall enclosing a lateral periphery of the core.
19. The method of claim 17 , wherein the step of fabricating the heat-dissipating assembly includes the steps of
furnishing the at least two pieces of pyrolytic graphite and a set of disassembled elements of a casing;
assembling the at least two pieces of pyrolytic graphite within the interior of the disassembled elements of the casing positioned so as to form an initial assembly;
placing the initial assembly into an evacuated interior of an elevated-temperature pressing apparatus; and
heating and simultaneously applying pressure to the initial assembly using the elevated temperature pressing apparatus until a resulting heat-dissipating assembly is substantially fully dense.
20. The method of claim 17 , wherein the step of fabricating the heat-dissipating assembly includes the step of
hot isostatic pressing.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/099,221 US6661317B2 (en) | 2002-03-13 | 2002-03-13 | Microwave monolithic integrated circuit assembly with multi-orientation pyrolytic graphite heat-dissipating assembly |
PCT/US2003/007475 WO2003079435A2 (en) | 2002-03-13 | 2003-03-11 | Microwave monolithic integrated circuit assembly with multi-orientation pyrolytic graphite heat-dissipating assembly |
AU2003222276A AU2003222276A1 (en) | 2002-03-13 | 2003-03-11 | Microwave monolithic integrated circuit assembly with multi-orientation pyrolytic graphite heat-dissipating assembly |
Applications Claiming Priority (1)
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US10/099,221 US6661317B2 (en) | 2002-03-13 | 2002-03-13 | Microwave monolithic integrated circuit assembly with multi-orientation pyrolytic graphite heat-dissipating assembly |
Publications (2)
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US20030174031A1 true US20030174031A1 (en) | 2003-09-18 |
US6661317B2 US6661317B2 (en) | 2003-12-09 |
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US10/099,221 Expired - Fee Related US6661317B2 (en) | 2002-03-13 | 2002-03-13 | Microwave monolithic integrated circuit assembly with multi-orientation pyrolytic graphite heat-dissipating assembly |
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US (1) | US6661317B2 (en) |
AU (1) | AU2003222276A1 (en) |
WO (1) | WO2003079435A2 (en) |
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DE102014000510A1 (en) * | 2014-01-20 | 2015-07-23 | Jenoptik Laser Gmbh | Semiconductor laser with anisotropic heat dissipation |
US20210193555A1 (en) * | 2019-12-19 | 2021-06-24 | Samsung Electronics Co., Ltd. | Semiconductor device and semiconductor package having the same |
CN114927398A (en) * | 2022-06-10 | 2022-08-19 | 电子科技大学 | Microstrip line slow wave structure |
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Also Published As
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WO2003079435A2 (en) | 2003-09-25 |
WO2003079435A3 (en) | 2004-05-06 |
US6661317B2 (en) | 2003-12-09 |
AU2003222276A1 (en) | 2003-09-29 |
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