US20040069227A1 - Processing chamber configured for uniform gas flow - Google Patents
Processing chamber configured for uniform gas flow Download PDFInfo
- Publication number
- US20040069227A1 US20040069227A1 US10/268,438 US26843802A US2004069227A1 US 20040069227 A1 US20040069227 A1 US 20040069227A1 US 26843802 A US26843802 A US 26843802A US 2004069227 A1 US2004069227 A1 US 2004069227A1
- Authority
- US
- United States
- Prior art keywords
- lid
- seal
- substrate support
- edge ring
- processing system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
- C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
Definitions
- Embodiments of the present invention generally relate to an improved gas delivery apparatus for semiconductor processing.
- VLSI very large scale integration
- ULSI ultra large scale integration
- VLSI and ULSI ultra large scale integration
- the multilevel interconnects that lie at the heart of this technology require precise processing of high aspect ratio features, such as vias and other interconnects. Reliable formation of these interconnects is very important to VLSI and ULSI success and to the continued effort to increase circuit density and quality of individual substrates.
- Atomic layer deposition is one deposition technique being explored for the deposition of material layers over features having high aspect ratios.
- One example of atomic layer deposition comprises the sequential introduction of pulses of gases.
- one cycle for the sequential introduction of pulses of gases may comprise a pulse of a first reactant gas, followed by a pulse of a purge gas and/or a pump evacuation, followed by a pulse of a second reactant gas, and followed by a pulse of a purge gas and/or a pump evacuation.
- gas as used herein is defined to include a single gas or a plurality gases.
- Sequential introduction of separate pulses of the first reactant and the second reactant may result in the alternating self-limiting absorption of monolayers of the reactants on the surface of the substrate and, thus, forms a monolayer of material for each cycle.
- the cycle may be repeated to a desired thickness of the deposited material.
- a pulse of a purge gas and/or a pump evacuation between the pulses of the first reactant gas and the pulses of the second reactant gas serves to reduce the likelihood of gas phase reactions of the reactants due to excess amounts of the reactants remaining in the chamber.
- an edge ring for a substrate support pedestal is provided that includes an annular body having an annular seal projecting therefrom. The seal is coupled to a side of the annular body opposite a side adapted to seat on the substrate support.
- a processing system in another aspect of the invention, includes a chamber body, a lid, a substrate support and a plurality of flow control orifices.
- the lid is disposed on the chamber body and defines an interior volume therewith.
- the substrate support is disposed in the interior volume and at least partially defines a processing region with the lid.
- the flow control orifices are disposed between the substrate support and the lid. The flow control orifices are adapted to control flow of gases exiting the processing region.
- a method of flowing gases through a processing chamber includes the steps of flowing a process gas into a processing region defined between a substrate support and a lid of the chamber body, flowing gas from the processing region to a pumping region of the chamber body through a plurality of flow control orifices defined at a perimeter of the substrate support, and flowing process gas through an exhaust port formed in at least one of the chamber body or the lid.
- FIG. 1 is a schematic cross-sectional view of one embodiment of a processing chamber having a plurality of flow control orifices.
- FIG. 2 is a top plan view of one embodiment of an edge ring.
- FIG. 3 is a partial cross-sectional view of the edge ring of FIG. 2 taken along section line 3 - 3 .
- FIG. 4 is a partial cross-sectional view of the edge ring of FIG. 2 taken along section line 4 - 4 .
- FIG. 5 is a top plan view of another embodiment of an edge ring.
- FIG. 6 is a partial cross-sectional view of the edge ring of FIG. 5 taken along section line 6 - 6 of FIG. 5.
- FIG. 7 is a partial cross-sectional view of the edge ring of FIG. 5 taken along section line 7 - 7 of FIG. 5.
- FIG. 8 is a partial sectional view of another embodiment of a processing chamber having a plurality of flow control orifices.
- FIG. 9 is a bottom view of one embodiment of a chamber lid having flow control orifices.
- FIG. 10 is a partial cross-sectional view of an alternative embodiment of a lid having a seal retaining feature.
- FIG. 11 is another embodiment of a processing chamber having flow control orifices.
- FIG. 12 is a perspective view of one embodiment of a seal.
- FIG. 13 is a sectional view of the seal of FIG. 12 taken along section lines 13 - 13 .
- FIG. 1 is a schematic cross-sectional view of one embodiment of a processing chamber 100 adapted for atomic layer deposition having uniform gas flow across the diameter of a substrate 110 processed therein.
- atomic layer deposition refers to a chemical vapor deposition process having sequential introduction of reactants to deposit a thin layer over a substrate structure. The sequential introduction of reactants may be repeated to deposit a plurality of thin layers to form a conformal layer of a desired thickness.
- the processing chamber 100 may also be adapted for other deposition or substrate processing techniques.
- One example of a chamber that may be adapted to benefit from the invention is described in the previously incorporated U.S. patent application Ser. No. 10/032,284.
- the processing chamber 100 includes a chamber body 102 coupled to a gas panel 126 and pumping system 178 .
- the gas panel 126 provides one or more process gases to the processing chamber 100 .
- the pumping system 178 generally includes a vacuum pump and/or other flow controls for exhausting gases from the chamber body 102 and controlling the pressure therein.
- the chamber body 102 is typically fabricated from aluminum or stainless steel.
- the chamber body 102 includes sidewalls 104 and a bottom 106 .
- a substrate access port 108 is formed through the sidewalls 104 and provides access for a robot (not shown) to deliver and retrieve the substrate 110 from the processing chamber 100 .
- a chamber lid assembly 132 is supported on the sidewalls 104 of the chamber body 102 and encloses a chamber volume 128 .
- the chamber lid assembly 132 is coupled to the gas panel 126 to provide gases, such as one or more process gases and/or a purge gas, to the interior of the processing chamber 100 .
- the chamber lid assembly 132 typically includes a mixing box 172 coupled to a lid 170 .
- the lid 170 may be made of stainless steel, aluminum, nickel-plated aluminum, nickel, or other suitable materials compatible with processing chemistries.
- a pumping channel 136 is formed in the lid 170 .
- the pumping channel 136 is coupled to the pumping system 178 through an exhaust port 138 formed through the sidewalls 104 of the chamber body 102 to evacuate any desired gases from the processing chamber 100 and to help maintain a desired pressure or a desired pressure range inside the chamber volume 128 of the processing chamber 100 .
- the mixing box 172 is fabricated from stainless steal and the lid 170 is fabricated from aluminum.
- the mixing box 172 includes gas inlets 136 A, 136 B formed therethrough to allow gas supplied from the gas panel 126 to enter an expanding channel 134 defined through the lid assembly 132 .
- the expanding channel 134 begins in the mixing box 172 and flares outwardly to exit the lid assembly 132 through a bottom surface 160 of the lid 170 thereby allowing gases supplied from the gas panel 126 to enter the chamber volume 128 defined within the processing chamber 100 .
- the expanding channel 134 is typically shaped as a truncated cone. Whether a gas is provided toward the walls of the expanding channel 134 or directly downward toward the substrate, the velocity of the gas flow decreases as the gas flow travels through the expanding channel 134 due to the expansion of the gas. The reduction of the velocity of the gas flow helps reduce the likelihood the gas flow will blow off reactants absorbed on the surface of the substrate 110 during processing.
- a substrate support 112 supported above the bottom 106 of the chamber body 102 by a shaft 140 .
- the substrate support 112 bifurcates the chamber volume 128 into a pumping region 166 and a processing region 164 .
- the pumping region is defined below a support surface 142 of the substrate support 112 .
- the processing region 164 is defined between the support surface 142 of the substrate support 112 and the bottom surface 160 of the lid 170 .
- the shaft 140 is coupled to a lift mechanism 114 that controls the elevation of the substrate support 112 .
- the lift mechanism 114 typically raises the substrate support 112 and a substrate 110 disposed thereon to a processing position as shown in FIG. 1, and lowers the substrate support 112 to a position that facilitates substrate transfer.
- Bellows 124 provide flexible seals between the substrate support 112 and lift plate 116 to allow motion without leakage or loss of vacuum from the chamber body 102 .
- the substrate support 112 includes a plurality of lift pins 120 disposed therethrough.
- the lift pins 120 may be selectively displaced by an actuator 118 that is coupled by a shaft 122 to a lift plate 116 disposed below the pins 120 .
- the lift pins 120 are adapted to place the substrate 110 in a spaced-apart relation to the substrate support 112 to facilitate substrate transfer.
- the substrate support 112 includes an aluminum or ceramic body 130 .
- the body 130 of the substrate support 112 is defined by the first or support surface 142 and an opposing second surface 144 that is coupled to the shaft 140 .
- the support surface 142 is adapted to support the substrate thereon during processing.
- a flange 146 extends outward from the body 130 and is recessed below the support surface 142 .
- a heating element 156 is coupled or embedded within the body 130 to control the temperature of the substrate support 112 and substrate 110 seated thereon.
- the heating element 156 may be a resistive heater, a conduct for flowing a heat transfer fluid or a thermoelectric device.
- the heating element 156 is coupled to a power source 158 and is adapted to maintain the substrate support 112 and substrate seated thereon at a predetermined temperature to facilitate substrate processing.
- the substrate 110 is maintained between about 275 and about 300 degrees Celsius.
- the substrate support 112 may include a vacuum chuck, an electrostatic chuck, or a clamp ring for securing the substrate 112 to the substrate support 112 during processing.
- the support surface 142 of the substrate support 112 is coupled to a vacuum source 154 through the shaft 140 and body 130 .
- the vacuum source 154 is adapted to apply a vacuum between the substrate 110 and support surface 142 of the body 130 to retain the substrate to the substrate support 112 .
- An edge ring 150 is disposed on the flange 146 of the substrate support 112 .
- the edge ring 150 is typically comprised at least partially of aluminum, stainless steel, ceramic, or other material compatible with the processing environment.
- the edge ring 150 generally protects a portion of the substrate support 112 disposed outward of the substrate 110 from deposition or attach from process chemistries, and defines an annular channel 168 (described further below) with the substrate support 112 that directs purge gas, supplied from a purge gas source 152 , to the perimeter of the substrate 110 .
- a seal 148 is disposed between the edge ring 150 and lid 170 .
- the seal 148 generally separates the pumping region 166 from the processing region 164 .
- the seal 148 is typically fabricated from a fluoropolymer or other material compatible with process chemistries suitable for use at elevated temperatures.
- a plurality of gas flow control orifices are defined between the substrate support 112 and the lid assembly 132 .
- the flow control orifices may be formed at least partially in the lid 170 , edge ring 150 , seal 148 or combinations thereof.
- the flow control orifices allow gas passage uniform and repeatable flow between the processing region 164 and the pumping region 166 .
- FIGS. 2, 3 and 4 are a top view and partial sectional views of one embodiment of an edge ring 150 having a plurality of flow control orifices 200 .
- the edge ring 150 has a top surface 202 disposed between an outer diameter 204 and an inner diameter 206 .
- the flow control orifices 200 are formed in the top surface 202 of the edge ring 150 and fluidly communicate with the outer diameter 204 of the edge ring 150 to allow gas to pass from the processing region 164 to the pumping region 166 during processing.
- the edge ring 150 includes a seal retaining feature 302 that is configured to retain the seal 148 to the edge ring 150 .
- the seal 148 may take different forms, for example, cup seals, lip seals, gaskets, o-rings and the like, the retaining feature 302 is generally configured to retain the particular type of seal 148 utilized.
- the seal retaining feature 302 may be formed in the lid 170 .
- the seal retaining feature 302 is configured to a capture seal 148 having a “U” shaped cross section.
- the seal retaining feature 302 includes a first member 304 coupling the top surface 202 of the edge ring 150 to a second member 306 .
- the second member 306 extends radially inward from the first member 304 to define a seal receiving pocket 308 with the top surface 202 of the edge ring 150 .
- a first flange 310 of the seal 148 is disposed in the seal receiving pocket 308 .
- the first flange 310 is coupled by an annular wall 314 to a second flange 312 .
- An optional spring form 316 typically fabricated from spring steel or stainless steel is embedded in the seal 148 to urge the first flange 310 away from the second flange 312 .
- the spring form 316 uniformly loads the flanges 310 , 312 respectively against the edge ring 150 and lid 170 to provide a barrier to gas flow therebetween that accommodates minor variations in parallelism and spacing between the lid 170 and edge ring 150 to ensure a flow barrier that directs substantially all of the flow through the flow orifices 200 , ensuring repeatable flow rates and uniformity during processing.
- the edge ring 150 is configured to minimize heat transfer between the substrate support 112 and edge ring 150 .
- a second surface 402 of the edge ring 150 includes an annular groove 404 that bifurcates the second surface 402 into an outer diameter portion 406 and an inner diameter portion 408 .
- the edge ring 150 is configured so that only the inner diameter portion 408 of the edge ring 150 contacts an upper surface 410 of the flange 146 . As the edge ring 150 and substrate support 112 have minimal contact, the edge ring 150 maintains a cooler temperature than the substrate support 112 during processing, thus extending the service life of the seal 148 .
- the edge ring 150 additionally includes an annular extension 412 that extends downward to an end 414 positioned below the second surface 402 of the edge ring 150 .
- the extension 412 substantially covers the sides of the substrate support 112 thereby protecting the substrate support 112 from unwanted deposition or other contaminants during processing.
- the extension 412 is configured to position the edge ring 150 on the substrate support 112 so that a small gap 416 is defined between the inner diameter 206 of the edge ring 150 and a wall 418 coupling the flange 146 and support surface 142 of the substrate support 112 .
- the gap 416 allows purge gas, routed through a passage 420 formed through the substrate support 112 from the purge gas source 152 , to flow between the edge ring 150 and the substrate 110 to minimized deposition of the edge ring 150 and substrate's edge.
- FIGS. 5 - 7 are a top plan view and partial sectional views of another embodiment of a seal ring 550 having a plurality of flow control orifices 500 .
- the flow control orifices 500 are radially formed in the seal ring 550 in a spaced-apart relation to enhance process gas flow uniformity over a substrate processed within the processing chamber 500 .
- the seal ring 550 typically includes a base 602 supporting a cover 604 .
- the base 602 is typically fabricated from stainless steel to reduce heat flow between the edge ring 550 and the substrate support 112 .
- the base 602 is supported on the upper surface 410 of the flange 146 while the cover 604 retains the seal 148 .
- the base 602 is typically an annular disk that includes a first surface 606 that supports the cover 604 and a second surface 608 that faces the substrate support 112 .
- the second surface 608 of the base 602 includes lip 610 that projects normally away from the second surface 608 .
- the lip 610 contacts the upper surface 410 of the flange 146 , thus maintaining the second surface 608 spaced-apart from the flange 148 to minimize thermal transfer between the edge ring 550 and the substrate support 112 .
- the cover 604 includes a seal retaining feature 614 to retain the seal 148 to the edge ring 550 .
- the cover 604 is typically comprised of aluminum or other material having good heat transfer characteristics to draw heat away from the seal 148 .
- the cover 602 has an annular body 616 coupled to a flange 612 .
- the body 616 is typically oriented parallel to the base 602 .
- the body 616 has a first surface 618 and a second surface 620 .
- the seal retaining feature 614 extends from the first surface 618 .
- the seal retaining feature 614 is typically similar to the seal retaining feature 302 described above.
- the flow control orifices 500 are formed in the first surface 606 of the cover 602 .
- the flow control orifices 500 allow gas to pass under the seal 148 to provide gas flow between the processing and pumping regions 164 , 166 of the processing chamber.
- a lip 622 extends downwardly from an inner end 624 of the second surface 620 .
- the lip 622 contacts the first surface 606 of the base 602 .
- the lip 622 maintains the body 616 in a spaced-apart relation with the base 602 , defining a gap 626 therebetween.
- the gap 626 and minimal contact area between the lip 622 and base 602 minimizes heat transfer between the base 602 and cover 604 , thereby preventing the substrate support 112 from excessively heating the seal 148 .
- the flange 612 is typically coupled to the body 616 at an outer end 628 of the second surface 620 .
- the flange 612 typically extends downward below the second surface 402 of the edge ring 550 .
- the flange 612 substantially covers the sides of the substrate support 112 , thereby protecting the substrate support 112 from unwanted deposition or other contaminants during processing.
- FIG. 8 is a partial sectional view of a processing chamber 800 having another embodiment of a plurality of flow restricting orifices 802 (one of which is shown in FIG. 8).
- the processing chamber 800 is typically similar to the processing chamber 100 described above, except that the flow restricting orifices 802 are formed in a lid 804 of the processing chamber 800 .
- a substrate support 112 is disposed in the processing chamber 800 and supports an edge ring 806 thereon.
- the edge ring 806 is similar to the edge rings described above, and may optionally include a plurality of second flow restricting orifices (not shown) similar to those shown in rings 150 , 550 . In the embodiment depicted in FIG. 8, the edge ring 806 does not permit gas flow therethrough.
- a seal 148 is disposed between the lid 804 of the processing chamber 800 and the edge ring 806 .
- the seal 148 is typically coupled to the edge ring 806 as shown in FIG. 8.
- the seal 148 is coupled a lid 1004 as shown in FIG. 10.
- the seal 148 provides a flow barrier between the lid 1004 and an edge ring 806 , thus forcing gas flowing between the processing region 164 and the pumping region 166 to pass through the restricting orifices 802 formed in the lid 1004 .
- the plurality of flow restricting orifices 802 are radially oriented grooves or slots formed in the lid 804 in a spaced-apart relationship.
- the relative position between the flow restricting orifices 802 is typically defined to promote flow uniformity of process gases within the processing region 166 .
- Each flow restricting orifice 802 has a first end 808 and a second end 810 .
- the first end 808 is positioned radially inward of a point of contact 812 between the seal 148 and the lid 804 .
- the second end 810 is positioned radially outwards of the point of contact 812 , thus allowing gases confined in the processing region 164 by the seal 148 to flow to the pumping region 166 .
- the flow restricting orifices 802 are configured to have a predefined sectional area so that a designed flow rate and pressure drop is achieved for a predetermined process regime. For example, in a processing chamber configured for ALD on 300 mm substrates, about 12-24 flow restricting orifices 802 are utilized having a combined sectional area of about 0.2 to about 0.4 square inches.
- FIG. 11 is a partial sectional view of a processing chamber 1100 having another embodiment of a plurality of flow restricting orifices 1102 (one of which is shown in FIG. 11).
- the processing chamber 1100 is typically similar to the processing chamber 100 described above, except that the flow restricting orifices 1102 are formed in a seal 1110 of the processing chamber 1100 .
- a substrate support 112 is disposed in the processing chamber 1100 and supports an edge ring 1106 thereon.
- the edge ring 1106 is similar to the edge rings described above, and may optionally include a plurality of second flow restricting orifices (not shown) similar to those shown in rings 150 , 550 . In the embodiment depicted in FIG. 11, the edge ring 1106 does not permit gas to flow therethrough.
- a lid 1104 of the processing chamber 1100 is disposed above the substrate support 112 .
- the lid 1104 is similar to the lids described above, and may optionally include a plurality of flow restricting orifices (not shown) as described with reference to the lid 804 . In the embodiment depicted in FIG. 11, the lid 1104 does not permit gas flow therethrough.
- the seal 1110 is disposed between the lid 1104 of the processing chamber 1100 and the edge ring 1106 .
- the seal 1110 may be coupled to the edge ring 1106 as shown in FIG. 11 or coupled to the lid 1104 .
- the seal 1110 may be take different forms, for example, cup seals, lip seals, gaskets, o-rings and the like.
- the seal 1110 is a cup seal similar to the seal 148 .
- the seal 1110 includes a first flange 1112 coupled by an annular wall 1114 to a second flange 1116 .
- An optional spring form 1118 is embedded in the seal 1110 to urge the first flange 1112 away from the second flange 1116 to enhance sealing between the lid 1104 and the edge ring 1106 .
- the first flange 1112 and/or the wall 1114 include a plurality of slots 1202 formed therethrough that define the flow control orifices 1102 .
- the slots 1202 allow gas to pass through the seal 1110 between the lid 1104 and edge ring 1106 to provide gas flow between the processing and pumping regions 164 , 166 of the processing chamber.
- a tantalum nitride layer is deposited by ALD in the processing chamber 100 of FIGS. 1 - 4 .
- the process provides pulses of pentadimethylamino-tantalum (PDMAT) from the gas panel 126 at a flow rate between about 100 sccm and about 1000 sccm for a pulse time of about 0.5 due to the small volume of the processing region 164 .
- Pulses of ammonia may be provided from gas panel 126 at a flow rate between about 100 sccm and about 1000 sccm for a pulse time of about 0.5 seconds or less.
- An argon purge gas is provided continuously at a flow rate between about 100 sccm and about 1000 sccm from gas panel 126 .
- the time between pulses of the tantalum containing compound and the nitrogen containing compound may be about 0.5 seconds or less.
- the substrate support temperature is typically maintained between about 200 degrees Celsius and about 300 degrees Celsius.
- a chamber pressure is maintained between about 1.0 and about 5.0 torr.
- the flow control orifices disposed between the substrate support 112 and lid 170 of the processing chamber 100 provide uniform gas flow across the substrate, enhancing deposition uniformity and process repeatability.
- This exemplary process provides a tantalum nitride layer in a thickness between about 0.5 ⁇ and about 1.0 ⁇ per cycle. The alternating sequence may be repeated until a desired thickness is achieved.
Abstract
An apparatus and method for performing uniform gas flow in a processing chamber is provided. In one embodiment, an apparatus is an edge ring that includes an annular body having an annular seal projecting therefrom is provided. The seal is coupled to a side of the annular body opposite a side adapted to seat on the substrate support. In another embodiment, a processing system is provided that includes a chamber body, a lid, a substrate support and a plurality of flow control orifices. The lid is disposed on the chamber body and defining an interior volume therewith. The substrate support is disposed in the interior volume and at least partially defines a processing region with the lid. The flow control orifices are disposed between the substrate support and the lid. The flow control orifices are adapted to control flow of gases exiting the processing region.
Description
- This application is related to of U.S. patent application Ser. No. 10/032,284, entitled “PROCESSING CHAMBER CONFIGURED FOR UNIFORM GAS FLOW” (Attorney Docket No. AMAT/6222/CPI/COPPER/PJS) filed Dec. 21, 2001, which is herein incorporated by reference.
- 1. Field of the Invention
- Embodiments of the present invention generally relate to an improved gas delivery apparatus for semiconductor processing.
- 2. Description of the Related Art
- Reliably producing sub-micron and smaller features is one of the key technologies for the next generation of very large scale integration (VLSI) and ultra large scale integration (ULSI) of semiconductor devices. However, as the fringes of circuit technology are pressed, the shrinking dimensions of interconnects in VLSI and ULSI technology have placed additional demands on the processing capabilities. The multilevel interconnects that lie at the heart of this technology require precise processing of high aspect ratio features, such as vias and other interconnects. Reliable formation of these interconnects is very important to VLSI and ULSI success and to the continued effort to increase circuit density and quality of individual substrates.
- As circuit densities increase, the widths of vias, contacts, and other features, as well as the dielectric materials between them, decrease to sub-micron dimensions (e.g., less than 0.20 micrometers or less), whereas the thickness of the dielectric layers remains substantially constant, with the result that the aspect ratios for the features, i.e., their height divided by width, increase. Many traditional deposition processes have difficulty filling sub-micron micron structures where the aspect ratio exceeds 4:1, and particularly where the aspect ratio exceeds 10:1. Therefore, there is a great amount of ongoing effort being directed at the formation of substantially void-free and seam-free sub-micron features having high aspect ratios.
- Atomic layer deposition is one deposition technique being explored for the deposition of material layers over features having high aspect ratios. One example of atomic layer deposition comprises the sequential introduction of pulses of gases. For instance, one cycle for the sequential introduction of pulses of gases may comprise a pulse of a first reactant gas, followed by a pulse of a purge gas and/or a pump evacuation, followed by a pulse of a second reactant gas, and followed by a pulse of a purge gas and/or a pump evacuation. The term “gas” as used herein is defined to include a single gas or a plurality gases. Sequential introduction of separate pulses of the first reactant and the second reactant may result in the alternating self-limiting absorption of monolayers of the reactants on the surface of the substrate and, thus, forms a monolayer of material for each cycle. The cycle may be repeated to a desired thickness of the deposited material. A pulse of a purge gas and/or a pump evacuation between the pulses of the first reactant gas and the pulses of the second reactant gas serves to reduce the likelihood of gas phase reactions of the reactants due to excess amounts of the reactants remaining in the chamber.
- As a single monolayer of material is deposited in each cycle, the ability to rapidly deliver and remove reactant and purge gases from the chamber has a substantial effect on substrate throughput. While using smaller volumes of gases reduces cycle times, flow uniformity becomes increasingly important in order to ensure complete and uniform substrate coverage during processing.
- Therefore, there is a need for methods and processing apparatuses that improve flow uniformity within processing chambers to enhance uniform substrate processing.
- Embodiments of the present invention relate to an apparatus and method for providing uniform gas flow in a processing chamber. In one aspect of the invention, an edge ring for a substrate support pedestal is provided that includes an annular body having an annular seal projecting therefrom. The seal is coupled to a side of the annular body opposite a side adapted to seat on the substrate support.
- In another aspect of the invention, a processing system is provided that includes a chamber body, a lid, a substrate support and a plurality of flow control orifices. The lid is disposed on the chamber body and defines an interior volume therewith. The substrate support is disposed in the interior volume and at least partially defines a processing region with the lid. The flow control orifices are disposed between the substrate support and the lid. The flow control orifices are adapted to control flow of gases exiting the processing region.
- In another aspect of the invention, a method of flowing gases through a processing chamber is provided. In one embodiment, the method of flowing gases through a processing chamber includes the steps of flowing a process gas into a processing region defined between a substrate support and a lid of the chamber body, flowing gas from the processing region to a pumping region of the chamber body through a plurality of flow control orifices defined at a perimeter of the substrate support, and flowing process gas through an exhaust port formed in at least one of the chamber body or the lid.
- So that the manner in which the above recited features of the present invention are attained and can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
- FIG. 1 is a schematic cross-sectional view of one embodiment of a processing chamber having a plurality of flow control orifices.
- FIG. 2 is a top plan view of one embodiment of an edge ring.
- FIG. 3 is a partial cross-sectional view of the edge ring of FIG. 2 taken along section line3-3.
- FIG. 4 is a partial cross-sectional view of the edge ring of FIG. 2 taken along section line4-4.
- FIG. 5 is a top plan view of another embodiment of an edge ring.
- FIG. 6 is a partial cross-sectional view of the edge ring of FIG. 5 taken along section line6-6 of FIG. 5.
- FIG. 7 is a partial cross-sectional view of the edge ring of FIG. 5 taken along section line7-7 of FIG. 5.
- FIG. 8 is a partial sectional view of another embodiment of a processing chamber having a plurality of flow control orifices.
- FIG. 9 is a bottom view of one embodiment of a chamber lid having flow control orifices.
- FIG. 10 is a partial cross-sectional view of an alternative embodiment of a lid having a seal retaining feature.
- FIG. 11 is another embodiment of a processing chamber having flow control orifices.
- FIG. 12 is a perspective view of one embodiment of a seal.
- FIG. 13 is a sectional view of the seal of FIG. 12 taken along section lines13-13.
- To facilitate understanding, identical reference numerals have been used, wherever possible, to designate identical elements that are common to the figures.
- FIG. 1 is a schematic cross-sectional view of one embodiment of a
processing chamber 100 adapted for atomic layer deposition having uniform gas flow across the diameter of asubstrate 110 processed therein. The term “atomic layer deposition” as used herein refers to a chemical vapor deposition process having sequential introduction of reactants to deposit a thin layer over a substrate structure. The sequential introduction of reactants may be repeated to deposit a plurality of thin layers to form a conformal layer of a desired thickness. Theprocessing chamber 100 may also be adapted for other deposition or substrate processing techniques. One example of a chamber that may be adapted to benefit from the invention is described in the previously incorporated U.S. patent application Ser. No. 10/032,284. - The
processing chamber 100 includes achamber body 102 coupled to agas panel 126 andpumping system 178. Thegas panel 126 provides one or more process gases to theprocessing chamber 100. Thepumping system 178 generally includes a vacuum pump and/or other flow controls for exhausting gases from thechamber body 102 and controlling the pressure therein. - The
chamber body 102 is typically fabricated from aluminum or stainless steel. Thechamber body 102 includessidewalls 104 and a bottom 106. Asubstrate access port 108 is formed through thesidewalls 104 and provides access for a robot (not shown) to deliver and retrieve thesubstrate 110 from theprocessing chamber 100. Achamber lid assembly 132 is supported on thesidewalls 104 of thechamber body 102 and encloses achamber volume 128. - The
chamber lid assembly 132 is coupled to thegas panel 126 to provide gases, such as one or more process gases and/or a purge gas, to the interior of theprocessing chamber 100. Thechamber lid assembly 132 typically includes amixing box 172 coupled to alid 170. Thelid 170 may be made of stainless steel, aluminum, nickel-plated aluminum, nickel, or other suitable materials compatible with processing chemistries. - In the embodiment depicted in FIG. 1, a pumping
channel 136 is formed in thelid 170. The pumpingchannel 136 is coupled to thepumping system 178 through anexhaust port 138 formed through thesidewalls 104 of thechamber body 102 to evacuate any desired gases from theprocessing chamber 100 and to help maintain a desired pressure or a desired pressure range inside thechamber volume 128 of theprocessing chamber 100. - In one embodiment, the
mixing box 172 is fabricated from stainless steal and thelid 170 is fabricated from aluminum. Themixing box 172 includesgas inlets gas panel 126 to enter an expandingchannel 134 defined through thelid assembly 132. - In one embodiment, the expanding
channel 134 begins in themixing box 172 and flares outwardly to exit thelid assembly 132 through abottom surface 160 of thelid 170 thereby allowing gases supplied from thegas panel 126 to enter thechamber volume 128 defined within theprocessing chamber 100. The expandingchannel 134 is typically shaped as a truncated cone. Whether a gas is provided toward the walls of the expandingchannel 134 or directly downward toward the substrate, the velocity of the gas flow decreases as the gas flow travels through the expandingchannel 134 due to the expansion of the gas. The reduction of the velocity of the gas flow helps reduce the likelihood the gas flow will blow off reactants absorbed on the surface of thesubstrate 110 during processing. - A
substrate support 112 supported above thebottom 106 of thechamber body 102 by ashaft 140. Thesubstrate support 112 bifurcates thechamber volume 128 into apumping region 166 and aprocessing region 164. The pumping region is defined below asupport surface 142 of thesubstrate support 112. Theprocessing region 164 is defined between thesupport surface 142 of thesubstrate support 112 and thebottom surface 160 of thelid 170. - The
shaft 140 is coupled to alift mechanism 114 that controls the elevation of thesubstrate support 112. Thelift mechanism 114 typically raises thesubstrate support 112 and asubstrate 110 disposed thereon to a processing position as shown in FIG. 1, and lowers thesubstrate support 112 to a position that facilitates substrate transfer.Bellows 124 provide flexible seals between thesubstrate support 112 andlift plate 116 to allow motion without leakage or loss of vacuum from thechamber body 102. - The
substrate support 112 includes a plurality of lift pins 120 disposed therethrough. The lift pins 120 may be selectively displaced by anactuator 118 that is coupled by ashaft 122 to alift plate 116 disposed below thepins 120. The lift pins 120 are adapted to place thesubstrate 110 in a spaced-apart relation to thesubstrate support 112 to facilitate substrate transfer. - In one embodiment, the
substrate support 112 includes an aluminum orceramic body 130. Thebody 130 of thesubstrate support 112 is defined by the first orsupport surface 142 and an opposingsecond surface 144 that is coupled to theshaft 140. Thesupport surface 142 is adapted to support the substrate thereon during processing. Aflange 146 extends outward from thebody 130 and is recessed below thesupport surface 142. - In one embodiment, a
heating element 156 is coupled or embedded within thebody 130 to control the temperature of thesubstrate support 112 andsubstrate 110 seated thereon. Theheating element 156 may be a resistive heater, a conduct for flowing a heat transfer fluid or a thermoelectric device. Theheating element 156 is coupled to apower source 158 and is adapted to maintain thesubstrate support 112 and substrate seated thereon at a predetermined temperature to facilitate substrate processing. In one embodiment, thesubstrate 110 is maintained between about 275 and about 300 degrees Celsius. - The
substrate support 112 may include a vacuum chuck, an electrostatic chuck, or a clamp ring for securing thesubstrate 112 to thesubstrate support 112 during processing. In the embodiment depicted in FIG. 1, thesupport surface 142 of thesubstrate support 112 is coupled to avacuum source 154 through theshaft 140 andbody 130. Thevacuum source 154 is adapted to apply a vacuum between thesubstrate 110 andsupport surface 142 of thebody 130 to retain the substrate to thesubstrate support 112. - An
edge ring 150 is disposed on theflange 146 of thesubstrate support 112. Theedge ring 150 is typically comprised at least partially of aluminum, stainless steel, ceramic, or other material compatible with the processing environment. Theedge ring 150 generally protects a portion of thesubstrate support 112 disposed outward of thesubstrate 110 from deposition or attach from process chemistries, and defines an annular channel 168 (described further below) with thesubstrate support 112 that directs purge gas, supplied from apurge gas source 152, to the perimeter of thesubstrate 110. - A
seal 148 is disposed between theedge ring 150 andlid 170. Theseal 148 generally separates thepumping region 166 from theprocessing region 164. Theseal 148 is typically fabricated from a fluoropolymer or other material compatible with process chemistries suitable for use at elevated temperatures. - In order to ensure uniform flow of gases in the
processing region 164, a plurality of gas flow control orifices (not shown in FIG. 1) are defined between thesubstrate support 112 and thelid assembly 132. The flow control orifices may be formed at least partially in thelid 170,edge ring 150, seal 148 or combinations thereof. The flow control orifices allow gas passage uniform and repeatable flow between theprocessing region 164 and thepumping region 166. - FIGS. 2, 3 and4 are a top view and partial sectional views of one embodiment of an
edge ring 150 having a plurality offlow control orifices 200. Theedge ring 150 has atop surface 202 disposed between anouter diameter 204 and aninner diameter 206. In the embodiment depicted in FIGS. 2, 3 and 4, theflow control orifices 200 are formed in thetop surface 202 of theedge ring 150 and fluidly communicate with theouter diameter 204 of theedge ring 150 to allow gas to pass from theprocessing region 164 to thepumping region 166 during processing. - Referring to FIG. 3, the
edge ring 150 includes aseal retaining feature 302 that is configured to retain theseal 148 to theedge ring 150. As theseal 148 may take different forms, for example, cup seals, lip seals, gaskets, o-rings and the like, the retainingfeature 302 is generally configured to retain the particular type ofseal 148 utilized. Alternatively, theseal retaining feature 302 may be formed in thelid 170. - In the embodiment depicted in FIG. 3, the
seal retaining feature 302 is configured to acapture seal 148 having a “U” shaped cross section. Theseal retaining feature 302 includes afirst member 304 coupling thetop surface 202 of theedge ring 150 to a second member 306. The second member 306 extends radially inward from thefirst member 304 to define a seal receiving pocket 308 with thetop surface 202 of theedge ring 150. - A
first flange 310 of theseal 148 is disposed in the seal receiving pocket 308. Thefirst flange 310 is coupled by anannular wall 314 to asecond flange 312. Anoptional spring form 316, typically fabricated from spring steel or stainless steel is embedded in theseal 148 to urge thefirst flange 310 away from thesecond flange 312. Thus, as thesubstrate support 112 is elevated toward thelid 170, thespring form 316 uniformly loads theflanges edge ring 150 andlid 170 to provide a barrier to gas flow therebetween that accommodates minor variations in parallelism and spacing between thelid 170 andedge ring 150 to ensure a flow barrier that directs substantially all of the flow through theflow orifices 200, ensuring repeatable flow rates and uniformity during processing. - Referring to FIG. 4, the
edge ring 150 is configured to minimize heat transfer between thesubstrate support 112 andedge ring 150. In the embodiment depicted in FIG. 4, a second surface 402 of theedge ring 150 includes anannular groove 404 that bifurcates the second surface 402 into anouter diameter portion 406 and aninner diameter portion 408. Theedge ring 150 is configured so that only theinner diameter portion 408 of theedge ring 150 contacts anupper surface 410 of theflange 146. As theedge ring 150 andsubstrate support 112 have minimal contact, theedge ring 150 maintains a cooler temperature than thesubstrate support 112 during processing, thus extending the service life of theseal 148. - The
edge ring 150 additionally includes anannular extension 412 that extends downward to anend 414 positioned below the second surface 402 of theedge ring 150. Theextension 412 substantially covers the sides of thesubstrate support 112 thereby protecting thesubstrate support 112 from unwanted deposition or other contaminants during processing. - The
extension 412 is configured to position theedge ring 150 on thesubstrate support 112 so that asmall gap 416 is defined between theinner diameter 206 of theedge ring 150 and awall 418 coupling theflange 146 andsupport surface 142 of thesubstrate support 112. Thegap 416 allows purge gas, routed through apassage 420 formed through thesubstrate support 112 from thepurge gas source 152, to flow between theedge ring 150 and thesubstrate 110 to minimized deposition of theedge ring 150 and substrate's edge. - FIGS.5-7 are a top plan view and partial sectional views of another embodiment of a
seal ring 550 having a plurality offlow control orifices 500. Theflow control orifices 500 are radially formed in theseal ring 550 in a spaced-apart relation to enhance process gas flow uniformity over a substrate processed within theprocessing chamber 500. Referring to FIG. 6, theseal ring 550 typically includes a base 602 supporting acover 604. Thebase 602 is typically fabricated from stainless steel to reduce heat flow between theedge ring 550 and thesubstrate support 112. - The
base 602 is supported on theupper surface 410 of theflange 146 while thecover 604 retains theseal 148. Thebase 602 is typically an annular disk that includes afirst surface 606 that supports thecover 604 and asecond surface 608 that faces thesubstrate support 112. - The
second surface 608 of thebase 602 includeslip 610 that projects normally away from thesecond surface 608. Thelip 610 contacts theupper surface 410 of theflange 146, thus maintaining thesecond surface 608 spaced-apart from theflange 148 to minimize thermal transfer between theedge ring 550 and thesubstrate support 112. - The
cover 604 includes aseal retaining feature 614 to retain theseal 148 to theedge ring 550. Thecover 604 is typically comprised of aluminum or other material having good heat transfer characteristics to draw heat away from theseal 148. - The
cover 602 has anannular body 616 coupled to aflange 612. Thebody 616 is typically oriented parallel to thebase 602. Thebody 616 has afirst surface 618 and asecond surface 620. Theseal retaining feature 614 extends from thefirst surface 618. Theseal retaining feature 614 is typically similar to theseal retaining feature 302 described above. - The
flow control orifices 500 are formed in thefirst surface 606 of thecover 602. Theflow control orifices 500 allow gas to pass under theseal 148 to provide gas flow between the processing andpumping regions - A
lip 622 extends downwardly from aninner end 624 of thesecond surface 620. Thelip 622 contacts thefirst surface 606 of thebase 602. Thelip 622 maintains thebody 616 in a spaced-apart relation with thebase 602, defining agap 626 therebetween. Thegap 626 and minimal contact area between thelip 622 andbase 602 minimizes heat transfer between the base 602 and cover 604, thereby preventing thesubstrate support 112 from excessively heating theseal 148. - The
flange 612 is typically coupled to thebody 616 at anouter end 628 of thesecond surface 620. Theflange 612 typically extends downward below the second surface 402 of theedge ring 550. Theflange 612 substantially covers the sides of thesubstrate support 112, thereby protecting thesubstrate support 112 from unwanted deposition or other contaminants during processing. - FIG. 8 is a partial sectional view of a
processing chamber 800 having another embodiment of a plurality of flow restricting orifices 802 (one of which is shown in FIG. 8). Theprocessing chamber 800 is typically similar to theprocessing chamber 100 described above, except that theflow restricting orifices 802 are formed in alid 804 of theprocessing chamber 800. - A
substrate support 112 is disposed in theprocessing chamber 800 and supports anedge ring 806 thereon. Theedge ring 806 is similar to the edge rings described above, and may optionally include a plurality of second flow restricting orifices (not shown) similar to those shown inrings edge ring 806 does not permit gas flow therethrough. - A
seal 148 is disposed between thelid 804 of theprocessing chamber 800 and theedge ring 806. Theseal 148 is typically coupled to theedge ring 806 as shown in FIG. 8. - In another embodiment of a
processing chamber 1000 having a plurality of flow restricting orifices 802 (one of which is shown in phantom in FIG. 10), theseal 148 is coupled alid 1004 as shown in FIG. 10. Theseal 148 provides a flow barrier between thelid 1004 and anedge ring 806, thus forcing gas flowing between theprocessing region 164 and thepumping region 166 to pass through the restrictingorifices 802 formed in thelid 1004. - Returning to the embodiment depicted in FIGS. 8 and 9, the plurality of
flow restricting orifices 802 are radially oriented grooves or slots formed in thelid 804 in a spaced-apart relationship. The relative position between theflow restricting orifices 802 is typically defined to promote flow uniformity of process gases within theprocessing region 166. Eachflow restricting orifice 802 has afirst end 808 and asecond end 810. Thefirst end 808 is positioned radially inward of a point ofcontact 812 between theseal 148 and thelid 804. Thesecond end 810 is positioned radially outwards of the point ofcontact 812, thus allowing gases confined in theprocessing region 164 by theseal 148 to flow to thepumping region 166. Theflow restricting orifices 802 are configured to have a predefined sectional area so that a designed flow rate and pressure drop is achieved for a predetermined process regime. For example, in a processing chamber configured for ALD on 300 mm substrates, about 12-24flow restricting orifices 802 are utilized having a combined sectional area of about 0.2 to about 0.4 square inches. - FIG. 11 is a partial sectional view of a
processing chamber 1100 having another embodiment of a plurality of flow restricting orifices 1102 (one of which is shown in FIG. 11). Theprocessing chamber 1100 is typically similar to theprocessing chamber 100 described above, except that theflow restricting orifices 1102 are formed in aseal 1110 of theprocessing chamber 1100. - A
substrate support 112 is disposed in theprocessing chamber 1100 and supports anedge ring 1106 thereon. Theedge ring 1106 is similar to the edge rings described above, and may optionally include a plurality of second flow restricting orifices (not shown) similar to those shown inrings edge ring 1106 does not permit gas to flow therethrough. - A
lid 1104 of theprocessing chamber 1100 is disposed above thesubstrate support 112. Thelid 1104 is similar to the lids described above, and may optionally include a plurality of flow restricting orifices (not shown) as described with reference to thelid 804. In the embodiment depicted in FIG. 11, thelid 1104 does not permit gas flow therethrough. - The
seal 1110 is disposed between thelid 1104 of theprocessing chamber 1100 and theedge ring 1106. Theseal 1110 may be coupled to theedge ring 1106 as shown in FIG. 11 or coupled to thelid 1104. - Referring to FIGS. 11 and 12, the
seal 1110 may be take different forms, for example, cup seals, lip seals, gaskets, o-rings and the like. In the embodiment depicted in FIG. 12, theseal 1110 is a cup seal similar to theseal 148. - The
seal 1110 includes afirst flange 1112 coupled by anannular wall 1114 to asecond flange 1116. Anoptional spring form 1118 is embedded in theseal 1110 to urge thefirst flange 1112 away from thesecond flange 1116 to enhance sealing between thelid 1104 and theedge ring 1106. - The
first flange 1112 and/or thewall 1114 include a plurality ofslots 1202 formed therethrough that define the flow control orifices 1102. Theslots 1202 allow gas to pass through theseal 1110 between thelid 1104 andedge ring 1106 to provide gas flow between the processing andpumping regions - In one exemplary deposition process, a tantalum nitride layer is deposited by ALD in the
processing chamber 100 of FIGS. 1-4. The process provides pulses of pentadimethylamino-tantalum (PDMAT) from thegas panel 126 at a flow rate between about 100 sccm and about 1000 sccm for a pulse time of about 0.5 due to the small volume of theprocessing region 164. Pulses of ammonia may be provided fromgas panel 126 at a flow rate between about 100 sccm and about 1000 sccm for a pulse time of about 0.5 seconds or less. An argon purge gas is provided continuously at a flow rate between about 100 sccm and about 1000 sccm fromgas panel 126. The time between pulses of the tantalum containing compound and the nitrogen containing compound may be about 0.5 seconds or less. The substrate support temperature is typically maintained between about 200 degrees Celsius and about 300 degrees Celsius. A chamber pressure is maintained between about 1.0 and about 5.0 torr. The flow control orifices disposed between thesubstrate support 112 andlid 170 of theprocessing chamber 100 provide uniform gas flow across the substrate, enhancing deposition uniformity and process repeatability. This exemplary process provides a tantalum nitride layer in a thickness between about 0.5 Å and about 1.0 Å per cycle. The alternating sequence may be repeated until a desired thickness is achieved. - While the foregoing is directed to the preferred embodiment of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (43)
1. An edge ring for a substrate support, comprising:
an annular body having a first side and an opposing second side, the first side adapted to seat on the substrate support; and
an annular seal coupled to the annular body and projecting above the second side.
2. The edge ring of claim 1 , wherein the annular body further comprises:
a base adapted to seat on the substrate support; and
a cover having the seal coupled thereto.
3. The edge ring of claim 2 , wherein the cover is more thermally conductive than the base.
4. The edge ring of claim 2 , wherein the base is comprised of stainless steel or ceramic.
5. The edge ring of claim 2 , wherein the cover is comprised of aluminum.
6. The edge ring of claim 2 , wherein an annular gap is defined between the cover and the base.
7. The edge ring of claim 2 , wherein the cover further comprises:
an annular disk having a first surface and a second surface;
a lip extending from an inner side of the first surface to the disk, the lip adapted to maintain the disk and the base in a spaced-apart relation; and
a seal retaining feature disposed on the first surface of the disk.
8. The edge ring of claim 2 , wherein the base further comprises a lip projecting normally away from a first surface of the base.
9. The edge ring of claim 1 , wherein the annular body further comprises:
a plurality of flow control orifices formed therein having at least at a portion of flow control orifices pass below the seal.
10. The edge ring of claim 1 , wherein the seal further comprises:
a first flange coupled to a second flange by an annular center member; and
a plurality of radial slots formed at least through the first flange.
11. A processing system, comprising:
a chamber body;
a lid disposed on the chamber body and defining an interior volume therewith;
a substrate support disposed in the interior volume and at least partially defining a processing region with the lid; and
a plurality of flow control orifices disposed between the substrate support and the lid, the flow control orifices adapted to control flow of gases exiting the processing region.
12. The processing system of claim 11 , wherein the flow control orifices are radially aligned in a polar array.
13. The processing system of claim 11 , wherein the flow control orifices have a total sectional area between about 0.2 to about 0.4 inches.
14. The processing system of claim 11 further comprising a seal disposed between the substrate support and the lid, the seal separating the processing region from a pumping region of the interior volume.
15. The processing system of claim 11 , wherein the flow control orifices are formed in the lid.
16. The processing system of claim 15 , wherein the flow control orifices are a plurality of grooves formed in the lid having a first end disposed radially inward of a point of contact between the lid and the seal and an outer end disposed radially outward of the point of contact between the lid and the seal.
17. The processing system of claim 14 , wherein the plurality of flow control orifices are disposed through the seal.
18. The processing system of claim 11 further comprising:
a seal disposed between the substrate support and the lid, the seal having a first flange adapted to seal against the lid and coupled to a second flange by an annular center member, the second flange adapted to seal against an edge ring supported by the substrate support.
19. The processing system of claim 18 , wherein the seal further comprises:
an embedded spring member adapted to urge the first flange away from the second flange.
20. The processing system of claim 18 , wherein the lid further comprises:
a seal retaining feature adapted to retain the seal to the lid.
21. The processing system of claim 18 , wherein the edge ring further comprises:
a seal retaining feature adapted to retain a seal to the edge ring.
22. The processing system of claim 11 further comprising:
an edge ring disposed on a surface of the substrate support facing the ring.
23. The processing system of claim 22 , wherein the flow control orifices are formed in the edge ring.
24. The processing system of claim 22 , wherein the edge ring further comprises:
a base adapted to seat on the substrate support; and
a cover having the seal coupled thereto.
25. The processing system of claim 11 , wherein the cover is more thermally conductive than the base.
26. The processing system of claim 11 , wherein the cover is comprised of aluminum.
27. The processing system of claim 11 , wherein an annular gap is defined between the cover and the base.
28. The processing system of claim 11 , wherein the cover further comprises:
an annular disk having a first surface and a second surface;
a lip extending from an inner side of the first surface to the disk, the lip adapted to maintain the disk and the base in a spaced-apart relation; and
a seal retaining feature disposed on the first surface of the disk.
29. The processing system of claim 11 , wherein the substrate support is positionable relative to the lid.
30. A processing system, comprising:
a chamber body;
a lid disposed on the chamber body and defining an interior volume therewith;
a substrate support disposed in the interior volume and at least partially defining a processing region with the lid;
a edge ring disposed on a side of the substrate support facing the lid;
a seal disposed between the edge ring and the lid and separating the processing region of the interior volume from a pumping region; and
a plurality of flow control orifices disposed between the processing region and the pumping region of the chamber body.
31. The processing system of claim 30 , wherein the substrate support is positionable relative to the lid.
32. The processing system of claim 30 , wherein the seal is coupled to at least one of the edge rings or the lid.
33. The processing system of claim 30 , wherein the plurality of flow control orifices are defined through at least one of the lid or the edge ring.
34. The processing system of claim 30 , wherein the seal further comprises:
a flange adapted to seal against the lid and coupled to a second flange by an annular center member, the second adapted to seal against the edge ring.
35. The processing system of claim 34 , wherein the seal further comprises an embedded spring member adapted to urge the first flange away from the second flange.
36. A method of flowing gases through a processing chamber, comprising:
flowing a process gas into a processing region defined between a substrate support and a lid of the chamber body;
flowing gas from the processing region to a pumping region of the chamber body through a plurality of flow control orifices defined at the perimeter of the substrate support; and
flowing process gas through an exhaust port formed in at least one of the chamber body or the lid.
37. The method of claim 36 , wherein the step of flowing gas from the processing region to the pumping region further comprises:
flowing gas through a plurality of radial grooves formed in the lid of the chamber body.
38. The method of claim 36 , wherein the step of flowing gas from the processing region to the pumping region further comprises:
flowing gas through a plurality of radially aligned grooves formed in an edge ring supported on the substrate support.
39. The method of claim 36 , wherein the step of flowing gas from the processing region to the pumping region further comprises:
flowing gas through a plurality of grooves formed in an annular seal disposed between the lid and the substrate support.
40. A method of flowing gas through a processing chamber, comprising:
elevating a substrate disposed on a substrate support toward a lid of the chamber body;
compressing a seal disposed between the substrate support and the lid of the chamber body to separate a processing region bound by the seal and a pumping region of the chamber body;
flowing process gas into the processing region; and
flowing process gas from the processing region into the pumping region through a plurality of flow control orifices.
41. The method of claim 40 , wherein the step of flowing gas from the processing region to the pumping region further comprises:
flowing gas through a plurality of radial grooves formed in the lid of the chamber body.
42. The method of claim 40 , wherein the step of flowing gas from the processing region to the pumping region further comprises:
flowing gas through a plurality of radially aligned grooves formed in an edge ring supported on the substrate support.
43. The method of claim 40 , wherein the step of flowing gas from the processing region to the pumping region further comprises:
flowing gas through a plurality of grooves formed in an annular seal disposed between the lid and the substrate support.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/268,438 US20040069227A1 (en) | 2002-10-09 | 2002-10-09 | Processing chamber configured for uniform gas flow |
US11/552,727 US7422637B2 (en) | 2002-10-09 | 2006-10-25 | Processing chamber configured for uniform gas flow |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/268,438 US20040069227A1 (en) | 2002-10-09 | 2002-10-09 | Processing chamber configured for uniform gas flow |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/552,727 Continuation US7422637B2 (en) | 2002-10-09 | 2006-10-25 | Processing chamber configured for uniform gas flow |
Publications (1)
Publication Number | Publication Date |
---|---|
US20040069227A1 true US20040069227A1 (en) | 2004-04-15 |
Family
ID=32068565
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/268,438 Abandoned US20040069227A1 (en) | 2002-10-09 | 2002-10-09 | Processing chamber configured for uniform gas flow |
US11/552,727 Expired - Fee Related US7422637B2 (en) | 2002-10-09 | 2006-10-25 | Processing chamber configured for uniform gas flow |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/552,727 Expired - Fee Related US7422637B2 (en) | 2002-10-09 | 2006-10-25 | Processing chamber configured for uniform gas flow |
Country Status (1)
Country | Link |
---|---|
US (2) | US20040069227A1 (en) |
Cited By (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030121608A1 (en) * | 2001-10-26 | 2003-07-03 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US20030172872A1 (en) * | 2002-01-25 | 2003-09-18 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
US20030224600A1 (en) * | 2002-03-04 | 2003-12-04 | Wei Cao | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
US20040144311A1 (en) * | 2002-11-14 | 2004-07-29 | Ling Chen | Apparatus and method for hybrid chemical processing |
US20040209430A1 (en) * | 2003-01-02 | 2004-10-21 | Choi Han-Mei | Method for forming a multi-layered structure of a semiconductor device and methods for forming a capacitor and a gate insulation layer using the multi-layered structure |
US20040211665A1 (en) * | 2001-07-25 | 2004-10-28 | Yoon Ki Hwan | Barrier formation using novel sputter-deposition method |
US20050095859A1 (en) * | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
US20050115675A1 (en) * | 2001-07-16 | 2005-06-02 | Gwo-Chuan Tzu | Lid assembly for a processing system to facilitate sequential deposition techniques |
US20050139160A1 (en) * | 2002-01-26 | 2005-06-30 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
US20050189072A1 (en) * | 2002-07-17 | 2005-09-01 | Applied Materials, Inc. | Method and apparatus of generating PDMAT precursor |
US20050209783A1 (en) * | 1996-12-20 | 2005-09-22 | Bittleston Simon H | Control devices for controlling the position of a marine seismic streamer |
US20050257735A1 (en) * | 2002-07-29 | 2005-11-24 | Guenther Rolf A | Method and apparatus for providing gas to a processing chamber |
US20060000805A1 (en) * | 2004-06-30 | 2006-01-05 | Applied Materials, Inc. | Method and apparatus for stable plasma processing |
US20060000802A1 (en) * | 2004-06-30 | 2006-01-05 | Ajay Kumar | Method and apparatus for photomask plasma etching |
US20060035025A1 (en) * | 2002-10-11 | 2006-02-16 | Applied Materials, Inc. | Activated species generator for rapid cycle deposition processes |
US20060223286A1 (en) * | 2001-07-27 | 2006-10-05 | Chin Barry L | Atomic layer deposition apparatus |
US20070044719A1 (en) * | 2002-10-09 | 2007-03-01 | Applied Materials, Inc. | Processing chamber configured for uniform gas flow |
US20070049053A1 (en) * | 2005-08-26 | 2007-03-01 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
US20070049043A1 (en) * | 2005-08-23 | 2007-03-01 | Applied Materials, Inc. | Nitrogen profile engineering in HI-K nitridation for device performance enhancement and reliability improvement |
US20070051472A1 (en) * | 2005-09-02 | 2007-03-08 | Tokyo Electron Limited | Ring-shaped component for use in a plasma processing, plasma processing apparatus and outer ring-shaped member |
US20070079759A1 (en) * | 2005-10-07 | 2007-04-12 | Applied Materials, Inc. | Ampoule splash guard apparatus |
JP2007537360A (en) * | 2004-05-12 | 2007-12-20 | アプライド マテリアルズ インコーポレイテッド | Apparatus and method for atomic layer deposition of hafnium-containing high dielectric constant dielectric materials |
US20080099431A1 (en) * | 2006-10-30 | 2008-05-01 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
US20080099933A1 (en) * | 2006-10-31 | 2008-05-01 | Choi Kenric T | Ampoule for liquid draw and vapor draw with a continous level sensor |
US20080099426A1 (en) * | 2006-10-30 | 2008-05-01 | Ajay Kumar | Method and apparatus for photomask plasma etching |
EP1948843A1 (en) * | 2005-11-17 | 2008-07-30 | Beneq Oy | Ald reactor |
US20080202425A1 (en) * | 2007-01-29 | 2008-08-28 | Applied Materials, Inc. | Temperature controlled lid assembly for tungsten nitride deposition |
US20090140391A1 (en) * | 2007-11-30 | 2009-06-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Seal Ring in Semiconductor Device |
US7682946B2 (en) | 2005-11-04 | 2010-03-23 | Applied Materials, Inc. | Apparatus and process for plasma-enhanced atomic layer deposition |
US7780788B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US7798096B2 (en) | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
US7871470B2 (en) | 2003-03-12 | 2011-01-18 | Applied Materials, Inc. | Substrate support lift mechanism |
US20110126852A1 (en) * | 2009-11-30 | 2011-06-02 | Lam Research Corporation | Electrostatic chuck with an angled sidewall |
US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
US8146896B2 (en) | 2008-10-31 | 2012-04-03 | Applied Materials, Inc. | Chemical precursor ampoule for vapor deposition processes |
US8187970B2 (en) | 2001-07-25 | 2012-05-29 | Applied Materials, Inc. | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
US20120266821A1 (en) * | 2005-01-18 | 2012-10-25 | Asm America, Inc. | Reaction system for growing a thin film |
US8323754B2 (en) | 2004-05-21 | 2012-12-04 | Applied Materials, Inc. | Stabilization of high-k dielectric materials |
US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
US20160312360A1 (en) * | 2015-04-22 | 2016-10-27 | Applied Materials, Inc. | Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate |
CN106637124A (en) * | 2015-10-30 | 2017-05-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Deposition ring for physical vapor deposition, and physical vapor deposition equipment |
US20180090344A1 (en) * | 2016-09-28 | 2018-03-29 | Samsung Electronics Co., Ltd. | Ring assembly and chuck assembly having the same |
US10872804B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
US10872803B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
CN112863990A (en) * | 2020-12-17 | 2021-05-28 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and air inlet mechanism thereof |
WO2021140271A1 (en) * | 2020-01-10 | 2021-07-15 | Picosun Oy | Substrate processing apparatus and method |
US11104991B2 (en) * | 2016-10-24 | 2021-08-31 | Tokyo Electron Limited | Processing apparatus and cover member |
US20220068613A1 (en) * | 2020-09-01 | 2022-03-03 | Samsung Electronics Co., Ltd. | Plasma processing equipment |
US20220084845A1 (en) * | 2020-09-17 | 2022-03-17 | Applied Materials, Inc. | High conductance process kit |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7803246B2 (en) * | 2007-04-03 | 2010-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etching system |
WO2009049020A2 (en) * | 2007-10-11 | 2009-04-16 | Valence Process Equipment, Inc. | Chemical vapor deposition reactor |
US8075728B2 (en) | 2008-02-28 | 2011-12-13 | Applied Materials, Inc. | Gas flow equalizer plate suitable for use in a substrate process chamber |
US8291857B2 (en) * | 2008-07-03 | 2012-10-23 | Applied Materials, Inc. | Apparatuses and methods for atomic layer deposition |
KR102233437B1 (en) * | 2009-08-31 | 2021-03-26 | 램 리써치 코포레이션 | Radio frequency (rf) ground return arrangements |
US9096930B2 (en) * | 2010-03-29 | 2015-08-04 | Stion Corporation | Apparatus for manufacturing thin film photovoltaic devices |
US8268184B2 (en) * | 2010-06-29 | 2012-09-18 | Tokyo Electron Limited | Etch process for reducing silicon recess |
US8920564B2 (en) * | 2010-07-02 | 2014-12-30 | Applied Materials, Inc. | Methods and apparatus for thermal based substrate processing with variable temperature capability |
US8501630B2 (en) | 2010-09-28 | 2013-08-06 | Tokyo Electron Limited | Selective etch process for silicon nitride |
US10242890B2 (en) * | 2011-08-08 | 2019-03-26 | Applied Materials, Inc. | Substrate support with heater |
JP6847610B2 (en) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | Heat treatment equipment |
KR20180080520A (en) | 2017-01-04 | 2018-07-12 | 삼성전자주식회사 | Focus ring and plasma processing apparatus including the same |
JP2021523556A (en) * | 2018-05-04 | 2021-09-02 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Pressure skew system to control the change of pressure from the center to the edge |
SG11202105321TA (en) * | 2018-12-20 | 2021-07-29 | Applied Materials Inc | Method and apparatus for supplying improved gas flow to a processing volume of a processing chamber |
Citations (88)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4389973A (en) * | 1980-03-18 | 1983-06-28 | Oy Lohja Ab | Apparatus for performing growth of compound thin films |
US4761269A (en) * | 1986-06-12 | 1988-08-02 | Crystal Specialties, Inc. | Apparatus for depositing material on a substrate |
US4834831A (en) * | 1986-09-08 | 1989-05-30 | Research Development Corporation Of Japan | Method for growing single crystal thin films of element semiconductor |
US4993357A (en) * | 1987-12-23 | 1991-02-19 | Cs Halbleiter -Und Solartechnologie Gmbh | Apparatus for atomic layer epitaxial growth |
US5027746A (en) * | 1988-03-22 | 1991-07-02 | U.S. Philips Corporation | Epitaxial reactor having a wall which is protected from deposits |
US5133986A (en) * | 1990-10-05 | 1992-07-28 | International Business Machines Corporation | Plasma enhanced chemical vapor processing system using hollow cathode effect |
US5225366A (en) * | 1990-06-22 | 1993-07-06 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus for and a method of growing thin films of elemental semiconductors |
US5294286A (en) * | 1984-07-26 | 1994-03-15 | Research Development Corporation Of Japan | Process for forming a thin film of silicon |
US5338362A (en) * | 1992-08-29 | 1994-08-16 | Tokyo Electron Limited | Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments |
US5441703A (en) * | 1987-06-30 | 1995-08-15 | Aixtron Gmbh | Gas inlet for a plurality of reactant gases into reaction vessel |
US5443647A (en) * | 1993-04-28 | 1995-08-22 | The United States Of America As Represented By The Secretary Of The Army | Method and apparatus for depositing a refractory thin film by chemical vapor deposition |
US5480818A (en) * | 1992-02-10 | 1996-01-02 | Fujitsu Limited | Method for forming a film and method for manufacturing a thin film transistor |
US5483919A (en) * | 1990-08-31 | 1996-01-16 | Nippon Telegraph And Telephone Corporation | Atomic layer epitaxy method and apparatus |
US5503875A (en) * | 1993-03-18 | 1996-04-02 | Tokyo Electron Limited | Film forming method wherein a partial pressure of a reaction byproduct in a processing container is reduced temporarily |
US5711811A (en) * | 1994-11-28 | 1998-01-27 | Mikrokemia Oy | Method and equipment for growing thin films |
US5730802A (en) * | 1994-05-20 | 1998-03-24 | Sharp Kabushiki Kaisha | Vapor growth apparatus and vapor growth method capable of growing good productivity |
US5796116A (en) * | 1994-07-27 | 1998-08-18 | Sharp Kabushiki Kaisha | Thin-film semiconductor device including a semiconductor film with high field-effect mobility |
US5855680A (en) * | 1994-11-28 | 1999-01-05 | Neste Oy | Apparatus for growing thin films |
US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
US5916365A (en) * | 1996-08-16 | 1999-06-29 | Sherman; Arthur | Sequential chemical vapor deposition |
US6015590A (en) * | 1994-11-28 | 2000-01-18 | Neste Oy | Method for growing thin films |
US6042652A (en) * | 1999-05-01 | 2000-03-28 | P.K. Ltd | Atomic layer deposition apparatus for depositing atomic layer on multiple substrates |
US6071572A (en) * | 1996-10-15 | 2000-06-06 | Applied Materials, Inc. | Forming tin thin films using remote activated specie generation |
US6174377B1 (en) * | 1997-03-03 | 2001-01-16 | Genus, Inc. | Processing chamber for atomic layer deposition processes |
US6183563B1 (en) * | 1998-05-18 | 2001-02-06 | Ips Ltd. | Apparatus for depositing thin films on semiconductor wafers |
US6197683B1 (en) * | 1997-09-29 | 2001-03-06 | Samsung Electronics Co., Ltd. | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same |
US6200893B1 (en) * | 1999-03-11 | 2001-03-13 | Genus, Inc | Radical-assisted sequential CVD |
US20010000866A1 (en) * | 1999-03-11 | 2001-05-10 | Ofer Sneh | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
US6231672B1 (en) * | 1998-05-18 | 2001-05-15 | Ips Ltd. | Apparatus for depositing thin films on semiconductor wafer by continuous gas injection |
US20010009140A1 (en) * | 1999-05-10 | 2001-07-26 | Niklas Bondestam | Apparatus for fabrication of thin films |
US20020000196A1 (en) * | 2000-06-24 | 2002-01-03 | Park Young-Hoon | Reactor for depositing thin film on wafer |
US20020007790A1 (en) * | 2000-07-22 | 2002-01-24 | Park Young-Hoon | Atomic layer deposition (ALD) thin film deposition equipment having cleaning apparatus and cleaning method |
US20020009544A1 (en) * | 1999-08-20 | 2002-01-24 | Mcfeely F. Read | Delivery systems for gases for gases via the sublimation of solid precursors |
US20020017242A1 (en) * | 2000-05-25 | 2002-02-14 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Inner tube for CVD apparatus |
US20020052097A1 (en) * | 2000-06-24 | 2002-05-02 | Park Young-Hoon | Apparatus and method for depositing thin film on wafer using atomic layer deposition |
US20020066411A1 (en) * | 2000-12-06 | 2002-06-06 | Chiang Tony P. | Method and apparatus for improved temperature control in atomic layer deposition |
US20020076481A1 (en) * | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Chamber pressure state-based control for a reactor |
US20020076507A1 (en) * | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Process sequence for atomic layer deposition |
US20020076508A1 (en) * | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Varying conductance out of a process region to control gas flux in an ALD reactor |
US20020073924A1 (en) * | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Gas introduction system for a reactor |
US20020086106A1 (en) * | 2000-11-07 | 2002-07-04 | Park Chang-Soo | Apparatus and method for thin film deposition |
US20020092471A1 (en) * | 2001-01-17 | 2002-07-18 | Samsung Electronics Co., Ltd. | Semiconductor deposition apparatus and shower head |
US20030004723A1 (en) * | 2001-06-26 | 2003-01-02 | Keiichi Chihara | Method of controlling high-speed reading in a text-to-speech conversion system |
US6506291B2 (en) * | 2001-06-14 | 2003-01-14 | Applied Materials, Inc. | Substrate support with multilevel heat transfer mechanism |
US20030010451A1 (en) * | 2001-07-16 | 2003-01-16 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US20030017697A1 (en) * | 2001-07-19 | 2003-01-23 | Kyung-In Choi | Methods of forming metal layers using metallic precursors |
US6511539B1 (en) * | 1999-09-08 | 2003-01-28 | Asm America, Inc. | Apparatus and method for growth of a thin film |
US20030022338A1 (en) * | 1999-11-22 | 2003-01-30 | Human Genome Sciences, Inc. | Kunitz-type protease inhibitor polynucleotides, polypeptides, and antibodies |
US20030042630A1 (en) * | 2001-09-05 | 2003-03-06 | Babcoke Jason E. | Bubbler for gas delivery |
US20030053799A1 (en) * | 2001-09-14 | 2003-03-20 | Lei Lawrence C. | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition |
US20030057527A1 (en) * | 2001-09-26 | 2003-03-27 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
US20030072913A1 (en) * | 2001-10-12 | 2003-04-17 | Kuang-Chun Chou | Substrate strip with sides having flanges and recesses |
US6551406B2 (en) * | 1999-12-28 | 2003-04-22 | Asm Microchemistry Oy | Apparatus for growing thin films |
US20030075925A1 (en) * | 2001-07-03 | 2003-04-24 | Sven Lindfors | Source chemical container assembly |
US20030075273A1 (en) * | 2001-08-15 | 2003-04-24 | Olli Kilpela | Atomic layer deposition reactor |
US20030079686A1 (en) * | 2001-10-26 | 2003-05-01 | Ling Chen | Gas delivery apparatus and method for atomic layer deposition |
US20030101938A1 (en) * | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
US20030106490A1 (en) * | 2001-12-06 | 2003-06-12 | Applied Materials, Inc. | Apparatus and method for fast-cycle atomic layer deposition |
US6578287B2 (en) * | 1997-07-11 | 2003-06-17 | Asm America, Inc. | Substrate cooling system and method |
US20030113187A1 (en) * | 2001-12-14 | 2003-06-19 | Applied Materials, Inc. | Dual robot processing system |
US20030116087A1 (en) * | 2001-12-21 | 2003-06-26 | Nguyen Anh N. | Chamber hardware design for titanium nitride atomic layer deposition |
US20030121469A1 (en) * | 2000-04-14 | 2003-07-03 | Sven Lindfors | Method and apparatus of growing a thin film |
US20030121608A1 (en) * | 2001-10-26 | 2003-07-03 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US6590186B2 (en) * | 2001-01-30 | 2003-07-08 | Tokyo Electron Limited | Heat treatment apparatus and method |
US6593484B2 (en) * | 2000-12-25 | 2003-07-15 | Kabushikikaisha Kojundokagaku Kenkyusho | Tantalum tertiary amylimido tris (dimethylamide), a process for producing the same, a solution of starting material for mocvd using the same, and a method of forming a tantalum nitride film using the same |
US20030143328A1 (en) * | 2002-01-26 | 2003-07-31 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US20030143747A1 (en) * | 2002-01-30 | 2003-07-31 | Niklas Bondestam | Active pulse monitoring in a chemical reactor |
US20040005749A1 (en) * | 2002-07-02 | 2004-01-08 | Choi Gil-Heyun | Methods of forming dual gate semiconductor devices having a metal nitride layer |
US20040014320A1 (en) * | 2002-07-17 | 2004-01-22 | Applied Materials, Inc. | Method and apparatus of generating PDMAT precursor |
US20040015300A1 (en) * | 2002-07-22 | 2004-01-22 | Seshadri Ganguli | Method and apparatus for monitoring solid precursor delivery |
US20040011404A1 (en) * | 2002-07-19 | 2004-01-22 | Ku Vincent W | Valve design and configuration for fast delivery system |
US20040011504A1 (en) * | 2002-07-17 | 2004-01-22 | Ku Vincent W. | Method and apparatus for gas temperature control in a semiconductor processing system |
US20040016404A1 (en) * | 2002-07-23 | 2004-01-29 | John Gregg | Vaporizer delivery ampoule |
US20040025370A1 (en) * | 2002-07-29 | 2004-02-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
US6716287B1 (en) * | 2002-10-18 | 2004-04-06 | Applied Materials Inc. | Processing chamber with flow-restricting ring |
US20040065255A1 (en) * | 2002-10-02 | 2004-04-08 | Applied Materials, Inc. | Cyclical layer deposition system |
US20040071897A1 (en) * | 2002-10-11 | 2004-04-15 | Applied Materials, Inc. | Activated species generator for rapid cycle deposition processes |
US6734020B2 (en) * | 2001-03-07 | 2004-05-11 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
US20040144311A1 (en) * | 2002-11-14 | 2004-07-29 | Ling Chen | Apparatus and method for hybrid chemical processing |
US20040144308A1 (en) * | 2003-01-29 | 2004-07-29 | Applied Materials, Inc. | Membrane gas valve for pulsing a gas |
US20050006799A1 (en) * | 2002-07-23 | 2005-01-13 | Gregg John N. | Method and apparatus to help promote contact of gas with vaporized material |
US6846380B2 (en) * | 2002-06-13 | 2005-01-25 | The Boc Group, Inc. | Substrate processing apparatus and related systems and methods |
US6866746B2 (en) * | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
US20050059240A1 (en) * | 2001-07-19 | 2005-03-17 | Kyung-In Choi | Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same |
US6868859B2 (en) * | 2003-01-29 | 2005-03-22 | Applied Materials, Inc. | Rotary gas valve for pulsing a gas |
US20050095859A1 (en) * | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
US20050104142A1 (en) * | 2003-11-13 | 2005-05-19 | Vijav Narayanan | CVD tantalum compounds for FET get electrodes |
US6908540B2 (en) * | 2001-07-13 | 2005-06-21 | Applied Materials, Inc. | Method and apparatus for encapsulation of an edge of a substrate during an electro-chemical deposition process |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE393967B (en) | 1974-11-29 | 1977-05-31 | Sateko Oy | PROCEDURE AND PERFORMANCE OF LAYING BETWEEN THE STORAGE IN A LABOR PACKAGE |
FI57975C (en) | 1979-02-28 | 1980-11-10 | Lohja Ab Oy | OVER ANCHORING VIDEO UPDATE FOR AVAILABILITY |
US4415275A (en) | 1981-12-21 | 1983-11-15 | Dietrich David E | Swirl mixing device |
GB2162207B (en) | 1984-07-26 | 1989-05-10 | Japan Res Dev Corp | Semiconductor crystal growth apparatus |
JPH01302726A (en) * | 1988-02-10 | 1989-12-06 | Japan Synthetic Rubber Co Ltd | Reactive ion etching equipment |
US5261959A (en) | 1988-05-26 | 1993-11-16 | General Electric Company | Diamond crystal growth apparatus |
JPH0824191B2 (en) | 1989-03-17 | 1996-03-06 | 富士通株式会社 | Thin film transistor |
US5607009A (en) | 1993-01-28 | 1997-03-04 | Applied Materials, Inc. | Method of heating and cooling large area substrates and apparatus therefor |
US5558717A (en) | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
US5571577A (en) | 1995-04-07 | 1996-11-05 | Board Of Trustees Operating Michigan State University | Method and apparatus for plasma treatment of a surface |
US5688359A (en) | 1995-07-20 | 1997-11-18 | Micron Technology, Inc. | Muffle etch injector assembly |
US5805408A (en) * | 1995-12-22 | 1998-09-08 | Lam Research Corporation | Electrostatic clamp with lip seal for clamping substrates |
US5578167A (en) * | 1996-01-31 | 1996-11-26 | Motorola, Inc. | Substrate holder and method of use |
US5835677A (en) | 1996-10-03 | 1998-11-10 | Emcore Corporation | Liquid vaporizer system and method |
US5807792A (en) | 1996-12-18 | 1998-09-15 | Siemens Aktiengesellschaft | Uniform distribution of reactants in a device layer |
US6286451B1 (en) * | 1997-05-29 | 2001-09-11 | Applied Materials, Inc. | Dome: shape and temperature controlled surfaces |
FI972874A0 (en) | 1997-07-04 | 1997-07-04 | Mikrokemia Oy | Foerfarande och anordning Foer framstaellning av tunnfilmer |
KR100274603B1 (en) | 1997-10-01 | 2001-01-15 | 윤종용 | Method and apparatus for fabricating semiconductor device |
NL1009327C2 (en) | 1998-06-05 | 1999-12-10 | Asm Int | Method and device for transferring wafers. |
KR100275738B1 (en) | 1998-08-07 | 2000-12-15 | 윤종용 | Method for producing thin film using atomatic layer deposition |
KR100331544B1 (en) | 1999-01-18 | 2002-04-06 | 윤종용 | Method for introducing gases into a reactor chamber and a shower head used therein |
US6159299A (en) | 1999-02-09 | 2000-12-12 | Applied Materials, Inc. | Wafer pedestal with a purge ring |
US6556962B1 (en) | 1999-07-02 | 2003-04-29 | Intel Corporation | Method for reducing network costs and its application to domino circuits |
KR100319494B1 (en) | 1999-07-15 | 2002-01-09 | 김용일 | Apparatus for Deposition of thin films on wafers through atomic layer epitaxial process |
FI118343B (en) | 1999-12-28 | 2007-10-15 | Asm Int | Apparatus for making thin films |
KR100378871B1 (en) | 2000-02-16 | 2003-04-07 | 주식회사 아펙스 | showerhead apparatus for radical assisted deposition |
TW576873B (en) | 2000-04-14 | 2004-02-21 | Asm Int | Method of growing a thin film onto a substrate |
FI118805B (en) | 2000-05-15 | 2008-03-31 | Asm Int | A method and configuration for introducing a gas phase reactant into a reaction chamber |
US6302965B1 (en) | 2000-08-15 | 2001-10-16 | Applied Materials, Inc. | Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces |
US20020104481A1 (en) | 2000-12-06 | 2002-08-08 | Chiang Tony P. | System and method for modulated ion-induced atomic layer deposition (MII-ALD) |
US6660126B2 (en) | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6777352B2 (en) | 2002-02-11 | 2004-08-17 | Applied Materials, Inc. | Variable flow deposition apparatus and method in semiconductor substrate processing |
US6778762B1 (en) | 2002-04-17 | 2004-08-17 | Novellus Systems, Inc. | Sloped chamber top for substrate processing |
US6821563B2 (en) | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
US20040069227A1 (en) * | 2002-10-09 | 2004-04-15 | Applied Materials, Inc. | Processing chamber configured for uniform gas flow |
US6818094B2 (en) | 2003-01-29 | 2004-11-16 | Applied Materials, Inc. | Reciprocating gas valve for pulsing a gas |
-
2002
- 2002-10-09 US US10/268,438 patent/US20040069227A1/en not_active Abandoned
-
2006
- 2006-10-25 US US11/552,727 patent/US7422637B2/en not_active Expired - Fee Related
Patent Citations (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4389973A (en) * | 1980-03-18 | 1983-06-28 | Oy Lohja Ab | Apparatus for performing growth of compound thin films |
US5294286A (en) * | 1984-07-26 | 1994-03-15 | Research Development Corporation Of Japan | Process for forming a thin film of silicon |
US4761269A (en) * | 1986-06-12 | 1988-08-02 | Crystal Specialties, Inc. | Apparatus for depositing material on a substrate |
US4834831A (en) * | 1986-09-08 | 1989-05-30 | Research Development Corporation Of Japan | Method for growing single crystal thin films of element semiconductor |
US5441703A (en) * | 1987-06-30 | 1995-08-15 | Aixtron Gmbh | Gas inlet for a plurality of reactant gases into reaction vessel |
US4993357A (en) * | 1987-12-23 | 1991-02-19 | Cs Halbleiter -Und Solartechnologie Gmbh | Apparatus for atomic layer epitaxial growth |
US5027746A (en) * | 1988-03-22 | 1991-07-02 | U.S. Philips Corporation | Epitaxial reactor having a wall which is protected from deposits |
US5225366A (en) * | 1990-06-22 | 1993-07-06 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus for and a method of growing thin films of elemental semiconductors |
US5281274A (en) * | 1990-06-22 | 1994-01-25 | The United States Of America As Represented By The Secretary Of The Navy | Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors |
US5483919A (en) * | 1990-08-31 | 1996-01-16 | Nippon Telegraph And Telephone Corporation | Atomic layer epitaxy method and apparatus |
US5133986A (en) * | 1990-10-05 | 1992-07-28 | International Business Machines Corporation | Plasma enhanced chemical vapor processing system using hollow cathode effect |
US5480818A (en) * | 1992-02-10 | 1996-01-02 | Fujitsu Limited | Method for forming a film and method for manufacturing a thin film transistor |
US5338362A (en) * | 1992-08-29 | 1994-08-16 | Tokyo Electron Limited | Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments |
US5503875A (en) * | 1993-03-18 | 1996-04-02 | Tokyo Electron Limited | Film forming method wherein a partial pressure of a reaction byproduct in a processing container is reduced temporarily |
US5443647A (en) * | 1993-04-28 | 1995-08-22 | The United States Of America As Represented By The Secretary Of The Army | Method and apparatus for depositing a refractory thin film by chemical vapor deposition |
US5730802A (en) * | 1994-05-20 | 1998-03-24 | Sharp Kabushiki Kaisha | Vapor growth apparatus and vapor growth method capable of growing good productivity |
US5796116A (en) * | 1994-07-27 | 1998-08-18 | Sharp Kabushiki Kaisha | Thin-film semiconductor device including a semiconductor film with high field-effect mobility |
US20020041931A1 (en) * | 1994-11-28 | 2002-04-11 | Tuomo Suntola | Method for growing thin films |
US5855680A (en) * | 1994-11-28 | 1999-01-05 | Neste Oy | Apparatus for growing thin films |
US5711811A (en) * | 1994-11-28 | 1998-01-27 | Mikrokemia Oy | Method and equipment for growing thin films |
US6015590A (en) * | 1994-11-28 | 2000-01-18 | Neste Oy | Method for growing thin films |
US6572705B1 (en) * | 1994-11-28 | 2003-06-03 | Asm America, Inc. | Method and apparatus for growing thin films |
US5916365A (en) * | 1996-08-16 | 1999-06-29 | Sherman; Arthur | Sequential chemical vapor deposition |
US6071572A (en) * | 1996-10-15 | 2000-06-06 | Applied Materials, Inc. | Forming tin thin films using remote activated specie generation |
US6174377B1 (en) * | 1997-03-03 | 2001-01-16 | Genus, Inc. | Processing chamber for atomic layer deposition processes |
US6578287B2 (en) * | 1997-07-11 | 2003-06-17 | Asm America, Inc. | Substrate cooling system and method |
US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
US6197683B1 (en) * | 1997-09-29 | 2001-03-06 | Samsung Electronics Co., Ltd. | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same |
US6183563B1 (en) * | 1998-05-18 | 2001-02-06 | Ips Ltd. | Apparatus for depositing thin films on semiconductor wafers |
US6231672B1 (en) * | 1998-05-18 | 2001-05-15 | Ips Ltd. | Apparatus for depositing thin films on semiconductor wafer by continuous gas injection |
US20030101938A1 (en) * | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
US6200893B1 (en) * | 1999-03-11 | 2001-03-13 | Genus, Inc | Radical-assisted sequential CVD |
US20010000866A1 (en) * | 1999-03-11 | 2001-05-10 | Ofer Sneh | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
US6042652A (en) * | 1999-05-01 | 2000-03-28 | P.K. Ltd | Atomic layer deposition apparatus for depositing atomic layer on multiple substrates |
US20010009140A1 (en) * | 1999-05-10 | 2001-07-26 | Niklas Bondestam | Apparatus for fabrication of thin films |
US20020009544A1 (en) * | 1999-08-20 | 2002-01-24 | Mcfeely F. Read | Delivery systems for gases for gases via the sublimation of solid precursors |
US20030101927A1 (en) * | 1999-09-08 | 2003-06-05 | Ivo Raaijmakers | Apparatus and method for growth of a thin film |
US6511539B1 (en) * | 1999-09-08 | 2003-01-28 | Asm America, Inc. | Apparatus and method for growth of a thin film |
US20030089308A1 (en) * | 1999-09-08 | 2003-05-15 | Ivo Raaijmakers | Apparatus and method for growth of a thin film |
US20030022338A1 (en) * | 1999-11-22 | 2003-01-30 | Human Genome Sciences, Inc. | Kunitz-type protease inhibitor polynucleotides, polypeptides, and antibodies |
US20030140854A1 (en) * | 1999-12-28 | 2003-07-31 | Vaino Kilpi | Apparatus for growing thin films |
US6551406B2 (en) * | 1999-12-28 | 2003-04-22 | Asm Microchemistry Oy | Apparatus for growing thin films |
US20030121469A1 (en) * | 2000-04-14 | 2003-07-03 | Sven Lindfors | Method and apparatus of growing a thin film |
US20020017242A1 (en) * | 2000-05-25 | 2002-02-14 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Inner tube for CVD apparatus |
US6579372B2 (en) * | 2000-06-24 | 2003-06-17 | Ips, Ltd. | Apparatus and method for depositing thin film on wafer using atomic layer deposition |
US20020094689A1 (en) * | 2000-06-24 | 2002-07-18 | Park Young-Hoon | Apparatus and method for depositing thin film on wafer using atomic layer deposition |
US20020000196A1 (en) * | 2000-06-24 | 2002-01-03 | Park Young-Hoon | Reactor for depositing thin film on wafer |
US20020052097A1 (en) * | 2000-06-24 | 2002-05-02 | Park Young-Hoon | Apparatus and method for depositing thin film on wafer using atomic layer deposition |
US20020007790A1 (en) * | 2000-07-22 | 2002-01-24 | Park Young-Hoon | Atomic layer deposition (ALD) thin film deposition equipment having cleaning apparatus and cleaning method |
US20020086106A1 (en) * | 2000-11-07 | 2002-07-04 | Park Chang-Soo | Apparatus and method for thin film deposition |
US20020066411A1 (en) * | 2000-12-06 | 2002-06-06 | Chiang Tony P. | Method and apparatus for improved temperature control in atomic layer deposition |
US20020073924A1 (en) * | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Gas introduction system for a reactor |
US20020076481A1 (en) * | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Chamber pressure state-based control for a reactor |
US20020076507A1 (en) * | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Process sequence for atomic layer deposition |
US20020076508A1 (en) * | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Varying conductance out of a process region to control gas flux in an ALD reactor |
US6593484B2 (en) * | 2000-12-25 | 2003-07-15 | Kabushikikaisha Kojundokagaku Kenkyusho | Tantalum tertiary amylimido tris (dimethylamide), a process for producing the same, a solution of starting material for mocvd using the same, and a method of forming a tantalum nitride film using the same |
US20020092471A1 (en) * | 2001-01-17 | 2002-07-18 | Samsung Electronics Co., Ltd. | Semiconductor deposition apparatus and shower head |
US6590186B2 (en) * | 2001-01-30 | 2003-07-08 | Tokyo Electron Limited | Heat treatment apparatus and method |
US6734020B2 (en) * | 2001-03-07 | 2004-05-11 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
US6506291B2 (en) * | 2001-06-14 | 2003-01-14 | Applied Materials, Inc. | Substrate support with multilevel heat transfer mechanism |
US20030004723A1 (en) * | 2001-06-26 | 2003-01-02 | Keiichi Chihara | Method of controlling high-speed reading in a text-to-speech conversion system |
US20030075925A1 (en) * | 2001-07-03 | 2003-04-24 | Sven Lindfors | Source chemical container assembly |
US6908540B2 (en) * | 2001-07-13 | 2005-06-21 | Applied Materials, Inc. | Method and apparatus for encapsulation of an edge of a substrate during an electro-chemical deposition process |
US20030010451A1 (en) * | 2001-07-16 | 2003-01-16 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US20030017697A1 (en) * | 2001-07-19 | 2003-01-23 | Kyung-In Choi | Methods of forming metal layers using metallic precursors |
US20050059240A1 (en) * | 2001-07-19 | 2005-03-17 | Kyung-In Choi | Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same |
US20030075273A1 (en) * | 2001-08-15 | 2003-04-24 | Olli Kilpela | Atomic layer deposition reactor |
US20030042630A1 (en) * | 2001-09-05 | 2003-03-06 | Babcoke Jason E. | Bubbler for gas delivery |
US6718126B2 (en) * | 2001-09-14 | 2004-04-06 | Applied Materials, Inc. | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition |
US20030053799A1 (en) * | 2001-09-14 | 2003-03-20 | Lei Lawrence C. | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition |
US20030057527A1 (en) * | 2001-09-26 | 2003-03-27 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
US20030072913A1 (en) * | 2001-10-12 | 2003-04-17 | Kuang-Chun Chou | Substrate strip with sides having flanges and recesses |
US20030079686A1 (en) * | 2001-10-26 | 2003-05-01 | Ling Chen | Gas delivery apparatus and method for atomic layer deposition |
US20030121608A1 (en) * | 2001-10-26 | 2003-07-03 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US20030106490A1 (en) * | 2001-12-06 | 2003-06-12 | Applied Materials, Inc. | Apparatus and method for fast-cycle atomic layer deposition |
US20030113187A1 (en) * | 2001-12-14 | 2003-06-19 | Applied Materials, Inc. | Dual robot processing system |
US20030116087A1 (en) * | 2001-12-21 | 2003-06-26 | Nguyen Anh N. | Chamber hardware design for titanium nitride atomic layer deposition |
US6866746B2 (en) * | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
US20030143328A1 (en) * | 2002-01-26 | 2003-07-31 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US20030143747A1 (en) * | 2002-01-30 | 2003-07-31 | Niklas Bondestam | Active pulse monitoring in a chemical reactor |
US6846380B2 (en) * | 2002-06-13 | 2005-01-25 | The Boc Group, Inc. | Substrate processing apparatus and related systems and methods |
US20040005749A1 (en) * | 2002-07-02 | 2004-01-08 | Choi Gil-Heyun | Methods of forming dual gate semiconductor devices having a metal nitride layer |
US20040011504A1 (en) * | 2002-07-17 | 2004-01-22 | Ku Vincent W. | Method and apparatus for gas temperature control in a semiconductor processing system |
US20040014320A1 (en) * | 2002-07-17 | 2004-01-22 | Applied Materials, Inc. | Method and apparatus of generating PDMAT precursor |
US20040013577A1 (en) * | 2002-07-17 | 2004-01-22 | Seshadri Ganguli | Method and apparatus for providing gas to a processing chamber |
US20040011404A1 (en) * | 2002-07-19 | 2004-01-22 | Ku Vincent W | Valve design and configuration for fast delivery system |
US20040015300A1 (en) * | 2002-07-22 | 2004-01-22 | Seshadri Ganguli | Method and apparatus for monitoring solid precursor delivery |
US20040016404A1 (en) * | 2002-07-23 | 2004-01-29 | John Gregg | Vaporizer delivery ampoule |
US20050006799A1 (en) * | 2002-07-23 | 2005-01-13 | Gregg John N. | Method and apparatus to help promote contact of gas with vaporized material |
US20040025370A1 (en) * | 2002-07-29 | 2004-02-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
US20040065255A1 (en) * | 2002-10-02 | 2004-04-08 | Applied Materials, Inc. | Cyclical layer deposition system |
US20040071897A1 (en) * | 2002-10-11 | 2004-04-15 | Applied Materials, Inc. | Activated species generator for rapid cycle deposition processes |
US6716287B1 (en) * | 2002-10-18 | 2004-04-06 | Applied Materials Inc. | Processing chamber with flow-restricting ring |
US20040144311A1 (en) * | 2002-11-14 | 2004-07-29 | Ling Chen | Apparatus and method for hybrid chemical processing |
US20040144308A1 (en) * | 2003-01-29 | 2004-07-29 | Applied Materials, Inc. | Membrane gas valve for pulsing a gas |
US6868859B2 (en) * | 2003-01-29 | 2005-03-22 | Applied Materials, Inc. | Rotary gas valve for pulsing a gas |
US20050095859A1 (en) * | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
US20050104142A1 (en) * | 2003-11-13 | 2005-05-19 | Vijav Narayanan | CVD tantalum compounds for FET get electrodes |
Cited By (107)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050209783A1 (en) * | 1996-12-20 | 2005-09-22 | Bittleston Simon H | Control devices for controlling the position of a marine seismic streamer |
US9587310B2 (en) | 2001-03-02 | 2017-03-07 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US20110114020A1 (en) * | 2001-07-16 | 2011-05-19 | Gwo-Chuan Tzu | Lid assembly for a processing system to facilitate sequential deposition techniques |
US20050115675A1 (en) * | 2001-07-16 | 2005-06-02 | Gwo-Chuan Tzu | Lid assembly for a processing system to facilitate sequential deposition techniques |
US10280509B2 (en) | 2001-07-16 | 2019-05-07 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US7905959B2 (en) | 2001-07-16 | 2011-03-15 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US8563424B2 (en) | 2001-07-25 | 2013-10-22 | Applied Materials, Inc. | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
US20040211665A1 (en) * | 2001-07-25 | 2004-10-28 | Yoon Ki Hwan | Barrier formation using novel sputter-deposition method |
US8187970B2 (en) | 2001-07-25 | 2012-05-29 | Applied Materials, Inc. | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
US9209074B2 (en) | 2001-07-25 | 2015-12-08 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
US8626330B2 (en) | 2001-07-27 | 2014-01-07 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US9031685B2 (en) | 2001-07-27 | 2015-05-12 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US7660644B2 (en) | 2001-07-27 | 2010-02-09 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US7860597B2 (en) | 2001-07-27 | 2010-12-28 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US20060223286A1 (en) * | 2001-07-27 | 2006-10-05 | Chin Barry L | Atomic layer deposition apparatus |
US8027746B2 (en) | 2001-07-27 | 2011-09-27 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US20100099270A1 (en) * | 2001-07-27 | 2010-04-22 | Chin Barry L | Atomic layer deposition apparatus |
US7699023B2 (en) * | 2001-10-26 | 2010-04-20 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US20080041313A1 (en) * | 2001-10-26 | 2008-02-21 | Ling Chen | Gas delivery apparatus for atomic layer deposition |
US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US20030121608A1 (en) * | 2001-10-26 | 2003-07-03 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US7780788B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US8668776B2 (en) | 2001-10-26 | 2014-03-11 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
US20070095285A1 (en) * | 2002-01-25 | 2007-05-03 | Thakur Randhir P | Apparatus for cyclical depositing of thin films |
US8123860B2 (en) * | 2002-01-25 | 2012-02-28 | Applied Materials, Inc. | Apparatus for cyclical depositing of thin films |
US20090056626A1 (en) * | 2002-01-25 | 2009-03-05 | Applied Materials, Inc. | Apparatus for cyclical depositing of thin films |
US20030172872A1 (en) * | 2002-01-25 | 2003-09-18 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
US20050139160A1 (en) * | 2002-01-26 | 2005-06-30 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
US7867896B2 (en) | 2002-03-04 | 2011-01-11 | Applied Materials, Inc. | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
US20030224600A1 (en) * | 2002-03-04 | 2003-12-04 | Wei Cao | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
US20050189072A1 (en) * | 2002-07-17 | 2005-09-01 | Applied Materials, Inc. | Method and apparatus of generating PDMAT precursor |
US7678194B2 (en) | 2002-07-17 | 2010-03-16 | Applied Materials, Inc. | Method for providing gas to a processing chamber |
US20050257735A1 (en) * | 2002-07-29 | 2005-11-24 | Guenther Rolf A | Method and apparatus for providing gas to a processing chamber |
US20070044719A1 (en) * | 2002-10-09 | 2007-03-01 | Applied Materials, Inc. | Processing chamber configured for uniform gas flow |
US20060035025A1 (en) * | 2002-10-11 | 2006-02-16 | Applied Materials, Inc. | Activated species generator for rapid cycle deposition processes |
US20040144311A1 (en) * | 2002-11-14 | 2004-07-29 | Ling Chen | Apparatus and method for hybrid chemical processing |
US20090308318A1 (en) * | 2002-11-14 | 2009-12-17 | Ling Chen | Apparatus and method for hybrid chemical processing |
US20080274299A1 (en) * | 2002-11-14 | 2008-11-06 | Ling Chen | Apparatus and method for hybrid chemical processing |
US8070879B2 (en) * | 2002-11-14 | 2011-12-06 | Applied Materials, Inc. | Apparatus and method for hybrid chemical processing |
US7402210B2 (en) * | 2002-11-14 | 2008-07-22 | Applied Materials, Inc. | Apparatus and method for hybrid chemical processing |
US7204886B2 (en) * | 2002-11-14 | 2007-04-17 | Applied Materials, Inc. | Apparatus and method for hybrid chemical processing |
US7591907B2 (en) * | 2002-11-14 | 2009-09-22 | Applied Materials, Inc. | Apparatus for hybrid chemical processing |
US20040209430A1 (en) * | 2003-01-02 | 2004-10-21 | Choi Han-Mei | Method for forming a multi-layered structure of a semiconductor device and methods for forming a capacitor and a gate insulation layer using the multi-layered structure |
US6989338B2 (en) * | 2003-01-02 | 2006-01-24 | Samsung Electronics Co., Ltd. | Method for forming a multi-layered structure of a semiconductor device and methods for forming a capacitor and a gate insulation layer using the multi-layered structure |
US7871470B2 (en) | 2003-03-12 | 2011-01-18 | Applied Materials, Inc. | Substrate support lift mechanism |
US20050095859A1 (en) * | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
JP2007537360A (en) * | 2004-05-12 | 2007-12-20 | アプライド マテリアルズ インコーポレイテッド | Apparatus and method for atomic layer deposition of hafnium-containing high dielectric constant dielectric materials |
US8343279B2 (en) | 2004-05-12 | 2013-01-01 | Applied Materials, Inc. | Apparatuses for atomic layer deposition |
US7794544B2 (en) | 2004-05-12 | 2010-09-14 | Applied Materials, Inc. | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
US8282992B2 (en) | 2004-05-12 | 2012-10-09 | Applied Materials, Inc. | Methods for atomic layer deposition of hafnium-containing high-K dielectric materials |
US8323754B2 (en) | 2004-05-21 | 2012-12-04 | Applied Materials, Inc. | Stabilization of high-k dielectric materials |
US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
US20060000805A1 (en) * | 2004-06-30 | 2006-01-05 | Applied Materials, Inc. | Method and apparatus for stable plasma processing |
US8801896B2 (en) | 2004-06-30 | 2014-08-12 | Applied Materials, Inc. | Method and apparatus for stable plasma processing |
US20060000802A1 (en) * | 2004-06-30 | 2006-01-05 | Ajay Kumar | Method and apparatus for photomask plasma etching |
US8349128B2 (en) | 2004-06-30 | 2013-01-08 | Applied Materials, Inc. | Method and apparatus for stable plasma processing |
US20120266821A1 (en) * | 2005-01-18 | 2012-10-25 | Asm America, Inc. | Reaction system for growing a thin film |
US10468291B2 (en) | 2005-01-18 | 2019-11-05 | Asm America, Inc. | Reaction system for growing a thin film |
US9359672B2 (en) * | 2005-01-18 | 2016-06-07 | Asm America, Inc. | Reaction system for growing a thin film |
US20070049043A1 (en) * | 2005-08-23 | 2007-03-01 | Applied Materials, Inc. | Nitrogen profile engineering in HI-K nitridation for device performance enhancement and reliability improvement |
US20070049053A1 (en) * | 2005-08-26 | 2007-03-01 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
US7972978B2 (en) | 2005-08-26 | 2011-07-05 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
US20070051472A1 (en) * | 2005-09-02 | 2007-03-08 | Tokyo Electron Limited | Ring-shaped component for use in a plasma processing, plasma processing apparatus and outer ring-shaped member |
US8038837B2 (en) * | 2005-09-02 | 2011-10-18 | Tokyo Electron Limited | Ring-shaped component for use in a plasma processing, plasma processing apparatus and outer ring-shaped member |
US8414735B2 (en) | 2005-09-02 | 2013-04-09 | Tokyo Electron Limited | Ring-shaped component for use in a plasma processing, plasma processing apparatus and outer ring-shaped member |
US20070079759A1 (en) * | 2005-10-07 | 2007-04-12 | Applied Materials, Inc. | Ampoule splash guard apparatus |
US7699295B2 (en) | 2005-10-07 | 2010-04-20 | Applied Materials, Inc. | Ampoule splash guard apparatus |
US20090114157A1 (en) * | 2005-10-07 | 2009-05-07 | Wei Ti Lee | Ampoule splash guard apparatus |
US7850779B2 (en) | 2005-11-04 | 2010-12-14 | Applied Materisals, Inc. | Apparatus and process for plasma-enhanced atomic layer deposition |
US9032906B2 (en) | 2005-11-04 | 2015-05-19 | Applied Materials, Inc. | Apparatus and process for plasma-enhanced atomic layer deposition |
US7682946B2 (en) | 2005-11-04 | 2010-03-23 | Applied Materials, Inc. | Apparatus and process for plasma-enhanced atomic layer deposition |
EP1948843A1 (en) * | 2005-11-17 | 2008-07-30 | Beneq Oy | Ald reactor |
US20090255470A1 (en) * | 2005-11-17 | 2009-10-15 | Beneq Oy | Ald reactor |
EP1948843A4 (en) * | 2005-11-17 | 2010-04-14 | Beneq Oy | Ald reactor |
US7798096B2 (en) | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
US8568553B2 (en) | 2006-10-30 | 2013-10-29 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
US20080099426A1 (en) * | 2006-10-30 | 2008-05-01 | Ajay Kumar | Method and apparatus for photomask plasma etching |
US7943005B2 (en) | 2006-10-30 | 2011-05-17 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
US7909961B2 (en) | 2006-10-30 | 2011-03-22 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
US20080099431A1 (en) * | 2006-10-30 | 2008-05-01 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
US7775508B2 (en) | 2006-10-31 | 2010-08-17 | Applied Materials, Inc. | Ampoule for liquid draw and vapor draw with a continuous level sensor |
US20080099933A1 (en) * | 2006-10-31 | 2008-05-01 | Choi Kenric T | Ampoule for liquid draw and vapor draw with a continous level sensor |
US8821637B2 (en) | 2007-01-29 | 2014-09-02 | Applied Materials, Inc. | Temperature controlled lid assembly for tungsten nitride deposition |
US20080202425A1 (en) * | 2007-01-29 | 2008-08-28 | Applied Materials, Inc. | Temperature controlled lid assembly for tungsten nitride deposition |
US7602065B2 (en) * | 2007-11-30 | 2009-10-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Seal ring in semiconductor device |
US20090140391A1 (en) * | 2007-11-30 | 2009-06-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Seal Ring in Semiconductor Device |
US8146896B2 (en) | 2008-10-31 | 2012-04-03 | Applied Materials, Inc. | Chemical precursor ampoule for vapor deposition processes |
WO2011065965A3 (en) * | 2009-11-30 | 2011-09-09 | Lam Research Corporation | An electrostatic chuck with an angled sidewall |
CN102666917A (en) * | 2009-11-30 | 2012-09-12 | 朗姆研究公司 | An electrostatic chuck with an angled sidewall |
WO2011065965A2 (en) * | 2009-11-30 | 2011-06-03 | Lam Research Corporation | An electrostatic chuck with an angled sidewall |
US20110126852A1 (en) * | 2009-11-30 | 2011-06-02 | Lam Research Corporation | Electrostatic chuck with an angled sidewall |
US20160312360A1 (en) * | 2015-04-22 | 2016-10-27 | Applied Materials, Inc. | Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate |
US11384432B2 (en) * | 2015-04-22 | 2022-07-12 | Applied Materials, Inc. | Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate |
CN106637124A (en) * | 2015-10-30 | 2017-05-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Deposition ring for physical vapor deposition, and physical vapor deposition equipment |
US10672629B2 (en) * | 2016-09-28 | 2020-06-02 | Samsung Electronics Co., Ltd. | Ring assembly and chuck assembly having the same |
US20180090344A1 (en) * | 2016-09-28 | 2018-03-29 | Samsung Electronics Co., Ltd. | Ring assembly and chuck assembly having the same |
US11104991B2 (en) * | 2016-10-24 | 2021-08-31 | Tokyo Electron Limited | Processing apparatus and cover member |
US10872804B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
US10872803B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
US11626313B2 (en) | 2017-11-03 | 2023-04-11 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
WO2021140271A1 (en) * | 2020-01-10 | 2021-07-15 | Picosun Oy | Substrate processing apparatus and method |
US20220068613A1 (en) * | 2020-09-01 | 2022-03-03 | Samsung Electronics Co., Ltd. | Plasma processing equipment |
US11804367B2 (en) * | 2020-09-01 | 2023-10-31 | Samsung Electronics Co., Ltd. | Plasma processing equipment |
US20220084845A1 (en) * | 2020-09-17 | 2022-03-17 | Applied Materials, Inc. | High conductance process kit |
CN112863990A (en) * | 2020-12-17 | 2021-05-28 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and air inlet mechanism thereof |
Also Published As
Publication number | Publication date |
---|---|
US7422637B2 (en) | 2008-09-09 |
US20070044719A1 (en) | 2007-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7422637B2 (en) | Processing chamber configured for uniform gas flow | |
US20210246552A1 (en) | Lids and lid assembly kits for atomic layer deposition chambers | |
US7780785B2 (en) | Gas delivery apparatus for atomic layer deposition | |
US20200087784A1 (en) | Atomic layer deposition chamber with counter-flow multi inject | |
KR101810532B1 (en) | Atomic layer deposition chamber with multi inject | |
EP1444380B1 (en) | Gas delivery apparatus for atomic layer deposition | |
US6866746B2 (en) | Clamshell and small volume chamber with fixed substrate support | |
US8668776B2 (en) | Gas delivery apparatus and method for atomic layer deposition | |
US7754013B2 (en) | Apparatus and method for atomic layer deposition on substrates | |
KR102305854B1 (en) | Micro-Volume Deposition Chamber | |
US11715667B2 (en) | Thermal process chamber lid with backside pumping | |
US20190048467A1 (en) | Showerhead and process chamber incorporating same | |
US11697877B2 (en) | High temperature face plate for deposition application | |
KR102640272B1 (en) | Lids and lid kits for atomic layer deposition chambers | |
CN112877675B (en) | Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: APPLIED MATERIALS, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KU, VINCENT;CHEN, LING;GRUNES, HOWARD;AND OTHERS;REEL/FRAME:013397/0963;SIGNING DATES FROM 20020917 TO 20021007 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |