US20040074870A1 - Etching method and apparatus - Google Patents
Etching method and apparatus Download PDFInfo
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- US20040074870A1 US20040074870A1 US10/359,115 US35911503A US2004074870A1 US 20040074870 A1 US20040074870 A1 US 20040074870A1 US 35911503 A US35911503 A US 35911503A US 2004074870 A1 US2004074870 A1 US 2004074870A1
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- etching
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- bank
- reactive gas
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- 238000005530 etching Methods 0.000 title claims abstract description 260
- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000007788 liquid Substances 0.000 claims abstract description 246
- 230000001846 repelling effect Effects 0.000 claims abstract description 35
- 239000007795 chemical reaction product Substances 0.000 claims description 22
- 239000011248 coating agent Substances 0.000 abstract description 81
- 238000000576 coating method Methods 0.000 abstract description 81
- 239000007789 gas Substances 0.000 description 58
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 230000007261 regionalization Effects 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000008016 vaporization Effects 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000036632 reaction speed Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
The invention intends to provide an etching method in which a bank 12 is formed to a member to be processed 10, and thereby a precise etching can be applied to a predetermined position, and apparatus for the method.
In a range outside of a predetermined pattern of the member to be processed 10, a liquid repelling bank 12 is formed, and by use of a discharge head 16 a coating liquid 14 such as an etching liquid 15 is coated on an etching portion 18 of the predetermined pattern. The etching portion 18 is rendered lyophilic by treatment to improve the fixing properties of the coating liquid 14, and the bank 12 is formed of a liquid repelling film, and thereby the coating liquid 14 is inhibited from adhering to the bank 12.
Description
- 1. Field of Invention
- The present invention relates to an etching method by which part of a surface or a front surface of a member-to-be-processed is removed, and an apparatus for the method. In particular, the invention relates to an etching method, in which a bank is disposed to a member-to-be-processed and thereby a coating region of a coating liquid is selectively etched, and an apparatus for the method.
- 2. Description of Related Art
- When elements and wiring patterns are formed on a member-to-be-processed, such as a silicon wafer, photoresist is coated on a surface of the member-to-be-processed, and patterned according to photolithography, and with it as a mask, wet etching with a coating liquid for use in etching, such as an HF aqueous solution, or dry etching with plasma is applied. In such etching methods, however, since a non-etching portion is protected by forming a mask on a surface of a member-to-be-processed, many materials are necessary to form the mask and many man-hours are required, resulting in an increase in the cost.
- In this connection, a method in which the etching is carried out without forming a mask is disclosed in JP-A-2001-185526. In this method, as a liquid discharge device, a discharge head according to an ink-jet method is installed and controlled, thereby an etching liquid is directly coated on an member-to-be-processed according to a predetermined pattern, and thereby etching is performed.
- In the etching method where an etching liquid is directly discharged on a surface of an member-to-be-processed, however, a size of a liquid droplet to be discharged is determined according to a shape of a discharge nozzle of the ink-jet system. That is, since a surface area of a coating liquid, dropped on a surface of a member-to-be-processed, is determined according to a nozzle shape, it is impossible to etch a shape smaller than a discharge diameter of a nozzle. Furthermore, a shape of thus etched pattern reflects the shape of the liquid droplet, and becomes a round point or a line or a plane made of successive round points. Thus, in the etching in which a related art discharge nozzle is used, since a liquid spreads according to the wettability and so on of the member-to-be-processed, not only a shape smaller than the discharge diameter but also a complicated shape and an edge are difficult to form. Furthermore, there is a problem in that when an etching liquid that is applied from a discharge nozzle scatters and sticks to other portion than a portion-to-be-etched, the etching other than a predetermined pattern is implemented. Still furthermore, since a shape of the etching depends on an adhesion state of the etching liquid, a shape accuracy becomes poor, resulting in incapability of implementing fine etching.
- Still furthermore, in a multi-layered film where a plurality of films of the member-to-be-processed is laminated and in the case of a plurality of films of the member-to be-processed being present on the same plane, the etching is carried out by exchanging the etching liquid according to the type of member-to-be-processed. Accordingly, a similar process has to be repeated for each of all types of the members-to-be-processed. As a result, the etching when there are films of different members-to-be-processed takes many man-hours.
- Furthermore, when a reactive gas, a liquid capable of dissolving the reactive gas, and a member-to-be-processed are reacted to carry out the etching, in some cases, the reactive gas remains in the surroundings of the member-to-be-processed. Accordingly, there is a concern in that a residual reactive gas and so on react with other materials and thereby generate unnecessary reaction products, the reaction products may adhere onto a surface of the member-to-be-processed and intervenes at an etching portion, and thereby excellent patterning is disturbed.
- The invention addresses or solves the above and/or other problems, and provides an etching method in which in order to enable to etch a necessary position of a member-to-be-processed, a liquid repelling bank is formed or the wettability of a portion other than an etching portion is enhanced, and thereby accurate etching can be applied to a predetermined position, and an apparatus for the method can be provided.
- In order to address or overcome the above, an etching method according to the invention is provided such that a bank is disposed in the surroundings of an etching portion of a member-to-be-processed, an etching liquid is supplied inside of the bank by use of a liquid discharge device, and thereby the etching portion is etched. According to the method, since only the etching portion is coated with an etching liquid by use of the liquid discharge device, the etching liquid can be inhibited from being excessively used, and since a range of etching portion is limited by use of the bank, accurate etching can be performed.
- Furthermore, in the etching method according to the invention, the etching portion can be etched by disposing a bank in the surroundings of the etching portion of the member-to-be-processed, by making the surroundings of the etching portion an atmosphere of a reactive gas, and by supplying a liquid capable of dissolving the reactive gas in the bank by use of the liquid discharge device. Thus, in the etching that uses the reactive gas and the liquid capable of dissolving the reactive gas, the etching portion is provided with the bank, and thereby the liquid is inhibited from diffusing. Still furthermore, the liquid can be inhibited from being excessively used. Since a range of the etching portion is limited by the bank, accurate etching can be applied.
- In addition, the etching portion can be rendered lyophilic by treatment. Thus, when the liquid repelling treatment is applied to the bank, and the lyophilic treatment is applied to the etching portion, the fixing properties of the etching liquid or the liquid can be enhanced.
- Furthermore, the etching portion of the member-to-be-processed is rendered lyophilic by treatment, the etching liquid is fed to the etching portion by the liquid discharge device, and thereby the etching portion can be etched. Thereby, without forming the bank, the etching liquid can be fixed to the etching portion, and thereby accurate etching can be carried out.
- Still furthermore, the etching portion of the member-to-be-processed is rendered lyophilic by treatment, the surroundings of the etching portion are made into an atmosphere of the reactive gas, and the liquid capable of dissolving the reactive gas is fed to the etching portion by use of the liquid discharge device, and thereby the etching portion can be etched. Thereby, without forming the bank, the etching liquid can be fixed to the etching portion, and thereby accurate etching can be carried out.
- The above etching can be carried out while removing the reaction product by suction. That is, since the reaction product in the etching portion is rapidly removed, a disturbing of the etching by a remaining reaction product can be inhibited, resulting in excellent etching.
- Furthermore, the etching can be applied to the member-to-be-processed by heating. Thereby, the etching is promoted in the speed, resulting in rapid and excellent etching.
- Still furthermore, the heating of the member-to-be-processed is carried out at a temperature in the range of 30 to 60 degree centigrade. Thereby, the reaction with the member-to-be-processed is promoted, and the liquid used in the etching can be inhibited from vaporizing, resulting in rapid etching.
- Furthermore, the bank is preferably rendered liquid repelling by treatment, or is preferable to be liquid repelling. Thus, when the bank is rendered liquid repelling by treatment, the etching liquid can be inhibited from diffusing from the etching portion, and precise etching can be performed.
- Still furthermore, the bank is provided such that it is made of a fluororesin film. Since the fluororesin is highly liquid repelling to all liquids, it can be effectively used also when many types of coating liquid are used.
- An etching apparatus according to the invention includes: a liquid discharge device that feeds etching liquid to an etching portion of a member-to-be-processed, and a suction portion that sucks reaction product during the etching. Since the discharge unit includes the liquid discharge device and the suction portion, it can supply the etching liquid and at the same time can remove the reaction product generated during the etching.
- Furthermore, the suction portion can be combined with the liquid discharge device. When the suction device is thus disposed integrally with the liquid discharge device, the reaction product generated during the etching can be instantaneously removed.
- Still furthermore, the etching apparatus according to the invention may include a discharge unit that includes a gas discharge portion that supplies a reactive gas to an etching portion of a member-to-be-processed, a liquid discharge device that supplies a liquid capable of dissolving the reactive gas to the etching portion, and the suction portion that is disposed in the neighborhood of the gas discharge portion or the liquid discharge portion and is capable of sucking a reaction product. Thereby, in addition to coating of the liquid, the reaction product generated during the etching, and the reactive gas that has not contributed to the etching, can be rapidly removed.
- The discharge unit can be disposed plurally. Thereby, the etching liquids or the reactive gases and the liquids corresponding to a plurality of different films can be filled. Accordingly, the etching to a plurality of films can be applied by only one etching.
- Furthermore, the discharge head can be provided with a heater. Thereby, a reaction speed of a member-to-be-processed can be enhanced, and a reaction product can be inhibited from dewing.
- FIG. 1 is a schematic explaining etching in forming a bank according to a first exemplary embodiment;
- FIG. 2 is a schematic explaining etching due to wettability control of a member-to be processed according to a second exemplary embodiment;
- FIG. 3 is a schematic explaining alteration of an etching depth involving the first exemplary embodiment;
- FIGS.4 (1) and 4 (2) are schematics explaining etching in a multi-layered film made of different types of film according to a third exemplary embodiment, where FIG. 4 (1) is a schematic showing a case where a member to be processed made of the multi-layered film made of different types of film is etched, and FIG. 4 (2) is a schematic showing a case where different types of film on the same plane are etched;
- FIGS.5 (1) and 5 (2) are schematics explaining etching according to a fourth exemplary embodiment where a reactive gas is used, where FIG. 5 (1) is a schematic showing a case where the multi-layered film made of different types of film is etched, and FIG. 5 (2) is a schematic showing a case where the different types of film on the same plane are etched;
- FIG. 6 is a sectional view of a discharge unit provided with a suction portion according to a fifth exemplary embodiment;
- FIG. 7 is a sectional view of a discharge unit provided with a suction portion according to a sixth exemplary embodiment.
- Exemplary embodiments of etching methods and apparatus according to the invention are detailed below reference to the drawings. Those described in the following are only part of exemplary embodiments according to the invention, and the invention is not restricted thereto.
- When a member to be processed10 is etched, in one method an
etching liquid 15, such as an HF aqueous solution, is directly coated on the member to be processed 10, and in the other method in an atmosphere where areactive gas 22, such as a fluorine-based gas, is present, a liquid capable of dissolving thereactive gas 22 is coated on the member to be processed 10, and thereactive gas 22, the liquid, and the member to be processed 10 are reacted, and thereby the etching is performed. In the present exemplary embodiment, unless particularly described, liquids capable of dissolving the reactive gas, such as pure water or alcohol, and the etching liquids, such as an HF aqueous solution, are collectively described as acoating liquid 14. - An explanatory schematic of the etching according to a first exemplary embodiment of the invention is shown in FIG. 1. First, a member to be processed10 is cleaned, and in order to etch the member to be processed 10, a
bank 12 is formed on a surface of the member to be processed 10 in a predetermined pattern shape. Thebank 12 is coated with acoating liquid 14, or coated with pure water in an atmosphere of areactive gas 22. Thebank 12 is liquid repelling, and can inhibit thecoating liquid 14 from scattering in the surroundings of the pattern shape. Furthermore, a surface ofsuch bank 12 is formed of a film that is resistant to thecoating liquid 14 or thereactive gas 22 of the etching. - The
bank 12 is formed as follows. First, a resist that is liquid repelling to thecoating liquid 14 is coated on a surface of the member to be processed 10. This is exposed to a predetermined pattern shape followed by developing, and thereby thebank 12 is provided with a desired pattern shape. Since thebank 12 is made of liquid repelling resist, it has a characteristic that repels thecoating liquid 14. - Alternatively, when a fluorine-based resin is coated on a surface of the member to be processed10, and followed by exposing it to an electromagnetic wave, formation of a film of a composition of the fluorine-based resin at a portion that is irradiated with the electromagnetic wave can be inhibited. Accordingly, when the electromagnetic wave is irradiated in the pattern shape, in the
liquid repelling bank 12, a pattern is formed. Since the fluorine-based resin is highly liquid repelling to all types of liquid, it is effective also when many types ofcoating liquids 14 are used. In exposing the fluorine-based resin like this, as the electromagnetic wave light can be preferably used, and furthermore the light is preferable to be ultra-violet light. Since the ultra-violet light is inexpensive, safe, and easy to handle, the simplification of fabricating process and the reduction of fabricating cost can be accomplished. - Still alternatively, an ordinary resist is coated on a surface of a member to be processed10 followed by applying patterning, the resist is fluorinated by treatment. Thereby, a
liquid repelling bank 12 is formed, and a pattern is formed on a surface of the member to be processed 10. - Thus, when the
liquid repelling bank 12 is formed, in the case of thecoating liquid 14 being coated running over the pattern shape, since a runover portion is rendered thecoating liquid 14 repelling by treatment, thecoating liquid 14 outside of the pattern shape can be inhibited from adhering. Furthermore, since thecoating liquid 14 repelled by the repellingbank 12 is introduced into the pattern shape surrounded by thebank 12, and followed by etching, the etching accuracy can be enhanced. - Furthermore, in the exemplary embodiment, the material of the
bank 12 is liquid repelling, or by later applying liquid repelling treatment to the bank, thebank 12 is rendered liquid repelling. However, by controlling a dropping amount of the etching liquid, or by properly selecting an etching liquid that does not etch the bank, without rendering the bank liquid repelling, treatment can be applied. Still furthermore, when the pattern accuracy is allowed to be relatively rough, thebank 12, which forms a pattern formation region to which the etching liquid of a processing liquid is supplied, may not be particularly rendered liquid repelling by treatment, in this case a bank that is no liquid repelling can be used. - On a surface of the member to be processed10 thereon the
bank 12 is thus formed, in order to enhance the fixing properties of the discharge liquid of the etching, the discharge liquid can be rendered more lyophilic by treatment in a portion where thebank 12 is not formed. This can be realized by irradiating ultra-violet light or by applying plasma treatment. That is, after thebank 12 is formed according to the above method, by irradiating electromagnetic wave such as ultra-violet light on a region outside of thebank 12 formation range, the film in the etching portion is de-bonded and removed. - Since thereby the portion other than the
bank 12 is rendered more lyophilic, when thecoating liquid 14 is coated on the member to be processed 10 during the etching, thecoating liquid 14 can easily permeate the portion. Furthermore, since thebank 12 is rendered liquid repelling by treatment, thecoating liquid 14, without adhering to thebank 12, is repelled and introduced in a portion that is lyophilic. Accordingly, when a region outside of thebank 12 formation range of the member to be processed 10 is rendered more lyophilic by treatment, thecoating liquid 14 can be easily fixed. - In the above, in a substrate surface of the member to be processed10, the
bank 12 is formed and thereby finer etching is intended to obtain. That is, in the case of thecoating liquid 14 being coated in a pattern shape on the member to be processed 10, by forming thebank 12, thecoating liquid 14 is inhibited from running over a range of the desired pattern shape owing to the surface tension of the liquid. Furthermore, since thebank 12 is rendered liquid repelling by treatment, thecoating liquid 14 is repelled on thebank 12 and introduced in the lyophilic patterned portion. That is, by forming thebank 12, a boundary of a coating liquid range when thecoating liquid 14 is coated is controlled. Accordingly, by forming the bank, accurate etching can be performed. - A second exemplary embodiment is shown in FIG. 2. In the above method, the
liquid repelling bank 12 is formed on a surface of the member to be processed 10, however, a method, in which a boundary of a coating region of thecoating liquid 14 is controlled without forming thebank 12, may be used. In this method, by controlling the lyophilic properties on a surface of the member to be processed 10, thecoated coating liquid 14 is enhanced in the fixing properties. For instance, after a mask is superposed on a surface of the member to be processed 10, the UV light is irradiated thereon, thus a range that is lyophilic can be formed. In the mask, a body is made of a transparent glass substrate, and on a portion corresponding to other than a pattern formation range of the member to be processed 10, a light shielding film made of chromium metal or the like is formed. Accordingly, when the UV light is irradiated on the member to be processed 10 that is covered by the mask, the UV light is irradiated only on a portion where the light shielding film is not present. Thereby, the patterned range of the member to be processed 10 is rendered lyophilic, accordingly, thecoating liquid 14 can be easily introduced. Thus, a boundary of a region where thecoating liquid 14 is coated can be controlled. In addition, other than the UV light, when plasma treatment or the like is applied, the similar effects can be attained. - As mentioned above, when the
bank 12 is formed on a surface of the member to be processed 10 and thereby the pattern formation is applied, the etching high in the accuracy of the pattern shape can be performed. That is, while in the etching according to the related art method, when the member to be processed 10 is a SiO substrate, a minimum pattern width is substantially 20 μm, however, in the etching according to the exemplary embodiment, a minimum pattern width of 10 μm can be formed. Accordingly, finer device design can be performed. - As mentioned above, the
bank 12 that controls the boundary where thecoating liquid 14 is coated is formed, thecoating liquid 14 is discharged and coated, and thereby the member to be processed 10 is etched. According to the exemplary embodiment, in order to coat thecoating liquid 14 in a predetermined pattern formation range, aliquid discharge head 16 is used as a liquid discharge device. This is because when theliquid discharge head 16 is used as coating apparatus, thecoating liquid 14 can be coated only on theetching portion 18. Accordingly, since there is no need of coating thecoating liquid 14 on an entire surface of the member to be processed 10, thecoating liquid 14 can be effectively saved. Furthermore, since thebank 12 may be formed only in the surroundings of a range where thecoating liquid 14 is coated by use of theliquid discharge head 16, thebank 12 can be formed in a minimum range. Accordingly, the cost can be effectively reduced. In addition, in thedischarge nozzle 24 of thedischarge head 16, the surroundings of a nozzle opening portion is processed with a member having the liquid repelling properties and the solution resistance. That is, when the nozzle opening portion is formed with, for instance, fluororesin or the like, the etching liquid and thecoating liquid 14, such as pure water, are inhibited from adhering. Furthermore, it is preferable that a flow path of the etching liquid, such as a nozzle interior of the liquid discharge head, is rendered liquid resistant by treatment. - In the exemplary embodiment, as mentioned above, the
coating liquid 14 is coated by use of theliquid discharge head 16. By controlling a discharge amount of thecoating liquid 14 at theliquid discharge head 16, an etching depth of the member to be processed 10 in the same type of material can be altered. In FIG. 3, an explanatory schematic of the etching depth alteration according to the first exemplary embodiment is shown. - That is, it is assumed that when the
coating liquid 14 is set at a slight amount in a liquid amount and coated on the member to be processed 10, the etching depth of the member to be processed 10 is X, and when thecoating liquid 14 is increased in its amount and coated on the member to be processed 10, the etching depth can be increased by Y. In the related art method, thecoating liquid 14 is uniformly coated on the member to be processed 10, in order to alter the etching depth, the etching has to be repeated several times. However, in the exemplary embodiment, a coating range of thecoating liquid 14 is controlled by use of theliquid discharge head 16, thus the etching depth can be simply altered. Furthermore, in this case, since the etching depth can be altered by the liquid amount of thecoating liquid 14, only by controlling the liquid amount of thecoating liquid 14 by use of theliquid discharge head 16, the etching depth of the member to be processed 10 can be freely altered. That is, according to a position of the etching portion, the depth can be altered at will. - In FIG. 4 (1), an explanatory schematic of etching according to a third exemplary embodiment is shown.
- When a plurality of the liquid discharge heads16, such as mentioned above, is mounted to etching apparatus, multiple liquid discharge head can be obtained. This is effective when the
etching liquid 15, such as an HF aqueous solution, is directly coated on the member to be processed 10 and thereby the etching is carried out. In the respective liquid discharge heads 16 constituted in multiple, theetching liquids 15 corresponding to the etchings of different types of film are filled in, respectively. When therespective etching liquids 15 are filled in the discharge heads 16 in advance, and thedischarge nozzles 24 of the discharge heads 16 are controlled so as to successively switch theetching liquids 15, the etching corresponding to a plurality of film qualities can be performed at once. - A case where a member to be processed10 that is made of a multi-layered film and is subjected to the etching will be considered, in which, for instance, two types or more of film 20 are formed into a multi-layer, that is, a
film 20A is laminated on top of afilm 20B. In general, when such a member is etched, at first, the etching is applied to thefilm 20A with theetching liquid 15 a to remove thefilm 20A, the top layer of the member to be processed 10, and thereafter thecoating liquid 14 is changed, and the etching is applied to thefilm 20B with theetching liquid 15 b. - According to the exemplary embodiment, since the
discharge head 16 is constituted into a multi-head and thereby different types ofetching liquid 15 are allowed to fill in corresponding liquid discharge heads 16, theetching liquid 15 a can be filled in oneliquid discharge head 16, and theetching liquid 15 b can be filled in the otherliquid discharge head 16. The etching is performed by coating the member to be processed 10 with theetching liquid 15 a at first, and thereafter by successively coating the member to be processed 10 with theetching liquid 15 b. That is, when theetching liquid 15 is switched in accordance with the type of the film 20, the member to be processed 10, in which two types or more of film 20 are laminated, can be etched at once. Thus, in the etching of the member to be processed 10 in which many types of film 20 are laminated in a multilayer, when theliquid discharge head 16 is constituted into a multi-head, in addition to saving labor hours for exchanging theetching liquid 15 for each of the film, labor hours to repeat the etching process from the beginning for each of the film can be saved. - At this time, outside of the
etching portion 18, thebank 12 is formed and thebank 12 is rendered liquid repelling by treatment. Accordingly, there is no concern of theetching liquid 15, scattered from theliquid discharge head 16 during the coating, adhering to thebank 12, and such anetching liquid 15 is repelled from on thebank 12 and introduced into thelyophilic etching portion 18. Accordingly, in the outside of theetching portion 18, excessive etching action can be inhibited from applying, and thereby the etching can be effectively applied. - Furthermore, in FIG. 4 (2), an exemplary modification of the third exemplary embodiment is shown.
- Such a
multi-liquid discharge head 16 is also effective even when different types of film are coated on same plane. When many types of film like this are present on same plane, according to the related art method, in accordance with the type of the film 20, theetching liquid 15 is exchanged, that is, the etching is repeated the number of the different types of film 20. However, according to the exemplary embodiment, by switching theetching liquid 15 filled in themulti-liquid discharge head 16 in accordance with each of the film 20, the etching of different types of film can be successively carried out. For instance, when two types of film have been formed on same plane of the member to be processed 10, according to the related art method, theetching liquid 15 has to be exchanged for each of the film qualities to be etched, that is, in total two times of the etching are necessary. However, according to the exemplary embodiment, therespective etching liquids 15 are filled in advance in themulti-liquid discharge head 16, and by switching theetching liquid 15 for each of the film 20, two types of film 20 can be etched at once in etching. - At this time, the outside of the
etching portion 18 such as thebank 12 is rendered liquid repelling by treatment. Accordingly, since theetching liquid 15 is repelled, an unnecessary portion can be inhibited from being etched. Furthermore, since a portion where thebank 12 is not formed, that is, theetching portion 18 is rendered lyophilic by treatment, theetching liquid 15 can rapidly permeate and the etching can be performed instantaneously. - Furthermore, as mentioned above, when an amount of liquid of the
etching liquid 15, which is coated from theliquid discharge head 16, is controlled, the etching depth can be controlled. Thus, by controlling the amount of liquid for each of the liquid discharge heads 16 and by switching theliquid discharge head 16 according to the film qualities, the member to be processed 10 can be simply and rapidly etched. - In FIG. 5 (1), an explanatory schematic of the etching according to the fourth exemplary embodiment is shown.
- In the etching of the member to be processed10, a case is considered, in which a
reactive gas 22 for use in the etching is contained in an atmosphere, pure water or alcohol is coated in a range of the etching, pure water or alcohol, thereactive gas 22, and the member to be processed 10 are allowed to react, and thereby the etching is carried out. When there is a plurality of different types of film in the member to be processed 10, in order to etch the different types of film, thereactive gas 22 has to be altered for each of the film 20. At this time, thecoating liquid 14, such as pure water or alcohol, that is coated on the member to be processed 10 is preferable to be the same type to save the labor hours in exchanging thecoating liquid 14. - When the different types of film are etched, a plurality of
reactive gases 22 is filled in advance in different containers, and the type of thereactive gas 22 is switched according to the film 20 to be etched. Accordingly, the member to be processed 10 that has different types of film can be successively etched by switching thereactive gas 22. Such a reactive gas is discharged from thegas discharge portion 17, and thecoating liquid 14, such as pure water, is discharged from theliquid discharge head 16 into the atmosphere. - For instance, in the case of a member to be processed10 that is constituted in a multi-layered film by laminating a
film 20A and afilm 20B that are different in the type, a reactive gas 22A and a reactive gas 22B are filled in advance. When thefilm 20A in an upper layer portion is etched, the reactive gas 22 a is discharged into the atmosphere, thecoating liquid 14 is coated in a predetermined pattern shape, and thereby allowing reacting with the member to be processed 10. After thefilm 20A coated on the member to be processed 10 is removed, thereactive gas 22 is switched to discharge the reactive gas 22B into the atmosphere, and thereby thefilm 20B is etched. - In FIG. 5 (2), an exemplary modification of the etching involving a fourth exemplary embodiment is shown.
- Even when a
film 20A and afilm 20B that are different in the type are formed on the same plane of the member to be processed 10, it is needless to say that by similarly switching the type of thereactive gas 22, the etching can be successively carried out. - As mentioned above, in the case of a multi-layered film in which different types of processing members are laminated, and in the case of different types of film being present on the same plane, different types of the members to be processed10 can be successively etched, and thereby the etching process can be shortened. At this time, by controlling a concentration of the
reactive gas 22, speed of the etching can be controlled. That is, by setting the concentration of thereactive gas 22 in the atmosphere at a higher value, the etching speed can be accelerated or decelerated, that is, the etching speed can be controlled at will. - Furthermore, when a processing member constituted of a multi-layered film that has two or more types of film, or a member to be processed10 that has two types or more of film 20 on the same plane, is etched, a mechanism that controls a liquid amount of the
coating liquid 14 such as pure water or alcohol, is provided to theliquid discharge head 16. Since the etching depth can be altered according to the liquid amount of thecoating liquid 14, by disposing the mechanism that controls the liquid amounts of these, a device by which the etching depth can be altered can be designed. Furthermore, it is effective also when through holes are formed in the multi-layered substrate. - FIG. 6 is a sectional view showing a discharge unit provided with a suction portion according to a fifth exemplary embodiment.
- When a material, such as fluororesin, whose decomposition is accelerated by virtue of heat is used, a pattern formation time period can be shortened by heating during the formation of the pattern. When a
heater 32 is disposed, in addition to allowing enhancing the reaction speed between the coatingliquid 14 and the member to be processed 10, thereactive gas 22 that is used in the etching, and unnecessary materials, such as water generated by the reaction, can be rapidly vaporized. From this, by disposing theheater 32, substantial dry etching can be realized. - In the case of HF gas is used as the
reactive gas 22 in the atmosphere in the etching of, for instance, a SiO2 film, when the etching is performed at room temperature, in some cases, owing to the dew condensation of HF, a chemical reaction is induced in the SiO2 film in a portion other than apredetermined etching portion 18, resulting in etching the portion other than theetching portion 18. In this connection, theheater 32 is disposed and controlled so as to heat to a temperature between a temperature at which the HF gas dews with difficulty (30 degree centigrade or more) and a temperature where a time period up to vaporization of water is not too short (60 degree centigrade or less), thereby inhibiting the HF gas from dewing, and thereby allowing etching theetching portion 18. The reason to set the upper limit to a heating temperature of theheater 32 is that, in the case of thecoating liquid 14 being pure water, when the heating temperature of the member to be processed 10 exceeds 60 degree centigrade and becomes higher, vaporization time of water-droplet becomes extremely short, and furthermore the sheet separation may occur. Accordingly, sufficient etching pattern cannot be obtained, resulting in disturbing the etching. In order to inhibit this from occurring, the heating temperature due to theheater 32 is restricted. - Furthermore, also by disposing the
heater 32 to thedischarge head 16, the effect can be obtained. In the surroundings of theliquid discharge head 16 and thegas discharge portion 17, there are materials that tend to induce chemical reactions, such as the etching liquid, and thecoating liquid 14, such as pure water or alcohol, and thereactive gas 22 in the atmosphere. In this connection, in the surroundings thereof, theheater 32 is disposed, thereby thereactive gas 22 and the reaction product are inhibited from dewing or adhering, the vaporization thereof is accelerated, and thereby an adverse affect on the member to be processed 10 is inhibited. Thereby, the flying accuracy of the liquid droplet can be maintained, resulting in excellent etching. - Still furthermore, in the surroundings of the
liquid discharge head 16, asuction portion 26 is disposed. FIG. 7 is a sectional view of a discharge unit that is provided with a suction portion according to a sixth exemplary embodiment. This is an exemplary embodiment in a method in which theetching liquid 15 such as an HF aqueous solution is directly coated on the member to be processed 10. - The
liquid discharge head 16 is provided with adischarge nozzle 24, and theetching liquid 15 is supplied under pressure from a solution tank (not shown) to thedischarge nozzle 24. In the surroundings of thedischarge nozzle 24, an annularly formedsuction exhaust path 28 is disposed, and with asuction portion 26 including such an ejector mechanism that makes use of air pressure, the surroundings of the nozzle are sucked. Thesuction portion 26 and thedischarge nozzle 24 are integrally formed, and the coating of theetching liquid 15, and the suction of the atmosphere are simultaneously carried out. - Furthermore, at a lower portion of the member to be processed10, a
heater 32 is disposed, thereby in addition to heating appropriately the member to be processed 10 to accelerate the reaction of the etching, the reaction products and so on are promoted to vaporize. In the surroundings of thedischarge nozzle 24, such reaction products (vaporized water and so on) are present, and when these adhere to the member to be processed 10 and thedischarge nozzle 24, a non-intentional reaction may be caused, and the etching may be disturbed. Accordingly, by means of thesuction portion 26 disposed in the surroundings of thedischarge nozzle 24, unnecessary reaction products are removed. - Still furthermore, in an etching method, which fills
reactive gas 22 of the etching atmosphere sufficiently in the surroundings of the member to be processed 10, and thecoating liquid 14, such as pure water, is coated, a sectional view of thedischarge head 16 portion when thesuction portion 26 is provided is shown. - From the
discharge nozzle 24 of theliquid discharge head 16, thecoating liquid 14, such as pure water, is coated, which is supplied under pressure from a solution tank (not shown). In the surroundings of thedischarge nozzle 24, annular paths are doubly disposed, an inside path supplying thereactive gas 22, an outside path being a path to suck and exhaust the atmosphere of the etching. At this time, in the neighborhood of the nozzle opening portion, the inside reactivegas supply path 30 meets with a discharge path of thecoating liquid 14 coated from the nozzle opening portion, and thereby thereactive gas 22 and thecoating liquid 14 are simultaneously supplied to the member to be processed 10. Furthermore, the suction andexhaust path 28 disposed on the outside, provided with an annular suction opening disposed outside of a discharge opening of thecoating liquid 14 and thereactive gas 22, sucks the atmosphere by use of an ejector mechanism (not shown) that makes use of an air pressure. Thus, thecoating liquid 14 path and thereactive gas 22 path and the suction andexhaustion path 28 are integrally formed, and this is regarded as asuction portion 26. - Under the member to be processed10, the
heater 32 is disposed, and thereby the member to be processed 10 is appropriately heated to accelerate the reaction of the etching, and at the same time the reaction product is accelerated in vaporizing. In the etching method that uses thereactive gas 22, thereactive gas 22 that has not contributed to the reaction lingers indefinitely in the atmosphere, in some cases, generates an unintentional reaction product and has an adverse affect on the etching, accordingly, has to be removed rapidly. In this connection, thesuction portion 26 rapidly removes the reaction product, thereactive gas 22 that has not contributed to the reaction, and vaporized water or gas from member to be processed 10. - In the etching in which the atmosphere is sucked by use of the
suction portion 26, the member to be processed 10 to which theabove bank 12 is formed can be used. Since thebank 12 is rendered liquid repelling by treatment, there are no concerns of the adherence of thecoating liquid 14. Furthermore, since the etching is performed in a portion where thebank 12 is not formed, when thebanks 12 are formed in advance with a small spacing, finer etching can be performed. Accordingly, without depending on the dimension of the liquid droplet of thecoating liquid 14, the etching can be performed at will. Still furthermore, since thecoating liquid 14, repelled by theliquid repelling bank 12, is rapidly introduced into a lyophilic portion outside of a range of thebank 12, the fixing properties of thecoating liquid 14 can be enhanced, resulting in the efficient etching. - Thus, according to the invention, since the
liquid repelling bank 12 is formed in the surroundings of the etching pattern shape, a portion outside of a range of the pattern shape is treated so as to repel thecoating liquid 14. Accordingly, when thecoating liquid 14 is coated with running over portion that is the outside of the pattern shape during the etching, thecoating liquid 14 can be inhibited from adhering in the outside of the pattern shape range. Furthermore, thecoating liquid 14, repelled by theliquid repelling bank 12, is introduced inside of the pattern shape surrounded by thebank 12, and the etching is carried out there, accordingly, the etching accuracy can be enhanced. - Furthermore, since the
liquid discharge head 16 and thesuction portion 26 are integrally formed, the reaction products or the like scattered in the surroundings of thedischarge nozzle 24 can be rapidly removed. Accordingly, materials detrimental to the etching can be promptly removed, resulting in exhibiting an effect in an enhancement in safety. Alternatively, theliquid discharge head 16 and the suction portion can be separately configured. - Still furthermore, the etching methods and the apparatus according to the invention can be applied to various technical fields. For instance, the etching methods and the apparatus according to the invention can be applied, for example, to the pattern formation of silicon substrates, and the pattern formation of hard masks when fabricating color filters and EL (electro-luminescence) devices.
Claims (15)
1. An etching method characterized in that a bank is disposed in the surroundings of an etching portion of a member to be processed, an etching liquid is supplied into the bank by use of a liquid discharge means, and thereby the etching portion is etched.
2. An etching method characterized in that a bank is disposed in the surroundings of an etching portion of a member to be processed, the surroundings of the etching portion are rendered a reactive gas atmosphere, and a liquid capable of dissolving the reactive gas is supplied into the bank by use of a liquid discharge means, and thereby the etching portion is etched.
3. The etching method as set forth in claim 1 or 2 characterized in that the etching portion is rendered lyophilic by treatment.
4. An etching method characterized in that an etching portion of a member to be processed is rendered lyophilic by treatment, an etching liquid is supplied to the etching portion by use of a liquid discharge means, and thereby the etching portion is etched.
5. An etching method characterized in that an etching portion of a member to be processed is rendered lyophilic by treatment, the surroundings of the etching portion are rendered a reactive gas atmosphere, and a liquid capable of dissolving the reactive gas is supplied to the etching portion by use of a liquid discharge means, and thereby the etching portion is etched.
6. The etching method as set forth in any one of claim 1 , 2, 4 or 5 characterized in that the etching is carried out with a reaction product removed by suction.
7. The etching method as set forth in any one of claim 1 , 2, 4 or 5 characterized in that the etching is carried out with the member to be processed heated.
8. The etching method as set forth in claim 7 characterized in that a member to be processed is heated to a temperature in the range of 30 to 60 degree centigrade.
9. The etching method as set forth in claim 1 or 2 characterized in that the bank is rendered liquid repelling by treatment, or has a characteristic of liquid repelling.
10. The etching method as set forth in any one of claim 1 , 2, 4 or 5 characterized in that the bank is made of a fluororesin film.
11. An etching apparatus characterized in comprising a liquid discharge means that supply an etching liquid to an etching portion of a member to be processed, and a suction portion that sucks a reaction product during the etching.
12. The etching apparatus as set forth in claim 11 characterized in that the suction portion is combined with the liquid discharge means.
13. An etching apparatus characterized in comprising a discharge unit that includes a gas discharge portion that supplies a reactive gas to an etching portion of a member to be processed, a liquid discharge means that supply liquid capable of dissolving the reactive gas to the etching portion, and a suction portion that is disposed in the neighborhood of the gas discharge portion or the liquid discharge portion and capable of sucking a reaction product.
14. The etching apparatus as set forth in any one of claims 11 through 13 characterized in that the discharge unit is disposed plurally.
15. The etching apparatus as set forth in any one of claims 11 through 13 characterized in that the discharge head is provided with a heater.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002-29322 | 2002-02-06 | ||
JP2002029322 | 2002-02-06 | ||
JP2002055673A JP3932099B2 (en) | 2002-02-06 | 2002-03-01 | Etching method |
JP2002-55673 | 2002-03-01 |
Publications (1)
Publication Number | Publication Date |
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US20040074870A1 true US20040074870A1 (en) | 2004-04-22 |
Family
ID=29404875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/359,115 Abandoned US20040074870A1 (en) | 2002-02-06 | 2003-02-06 | Etching method and apparatus |
Country Status (2)
Country | Link |
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US (1) | US20040074870A1 (en) |
JP (1) | JP3932099B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180182616A1 (en) * | 2016-12-27 | 2018-06-28 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
US11136673B2 (en) * | 2019-02-08 | 2021-10-05 | The Boeing Company | Method of surface micro-texturing with a subtractive agent |
US11142830B2 (en) | 2019-02-08 | 2021-10-12 | The Boeing Company | Method of surface micro-texturing with a subtractive agent |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008307713A (en) * | 2007-06-12 | 2008-12-25 | Toyoda Gosei Co Ltd | Processing method of irregular pattern on surface of mold |
JP5532871B2 (en) * | 2009-12-01 | 2014-06-25 | セイコーエプソン株式会社 | Nozzle and etchant supply device |
JP5652381B2 (en) * | 2011-11-29 | 2015-01-14 | 東ソー株式会社 | Surface processing method and apparatus |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4564580A (en) * | 1983-06-30 | 1986-01-14 | Kogyo Gijutsuin | Photosensitive resin composition |
US20030029831A1 (en) * | 2000-10-16 | 2003-02-13 | Takeo Kawase | Etching process |
-
2002
- 2002-03-01 JP JP2002055673A patent/JP3932099B2/en not_active Expired - Fee Related
-
2003
- 2003-02-06 US US10/359,115 patent/US20040074870A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4564580A (en) * | 1983-06-30 | 1986-01-14 | Kogyo Gijutsuin | Photosensitive resin composition |
US20030029831A1 (en) * | 2000-10-16 | 2003-02-13 | Takeo Kawase | Etching process |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180182616A1 (en) * | 2016-12-27 | 2018-06-28 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
US10770284B2 (en) * | 2016-12-27 | 2020-09-08 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
US11136673B2 (en) * | 2019-02-08 | 2021-10-05 | The Boeing Company | Method of surface micro-texturing with a subtractive agent |
US11142830B2 (en) | 2019-02-08 | 2021-10-12 | The Boeing Company | Method of surface micro-texturing with a subtractive agent |
Also Published As
Publication number | Publication date |
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JP2003303803A (en) | 2003-10-24 |
JP3932099B2 (en) | 2007-06-20 |
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