US20040118344A1 - System and method for controlling plasma with an adjustable coupling to ground circuit - Google Patents
System and method for controlling plasma with an adjustable coupling to ground circuit Download PDFInfo
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- US20040118344A1 US20040118344A1 US10/326,918 US32691802A US2004118344A1 US 20040118344 A1 US20040118344 A1 US 20040118344A1 US 32691802 A US32691802 A US 32691802A US 2004118344 A1 US2004118344 A1 US 2004118344A1
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- plasma
- electrode
- ground circuit
- adjustable coupling
- processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Abstract
A system and method for controlling plasma. The system includes a semiconductor chamber comprising a powered electrode, another electrode, and an adjustable coupling to ground circuit. The powered electrode is configured to receive a wafer or substrate. There is at least one grounded electrode configured to generate an electrical connection with the powered electrode. At least one of the grounded electrodes is electrically coupled to the adjustable coupling to ground circuit. The adjustable coupling to ground circuit is configured to modify the impedance of the grounded electrode. The ion energy of the plasma is controlled by the adjustable coupling to ground circuit.
Description
- 1. Field of Invention
- The present invention is related to semiconductor fabrication. More particularly, the invention is related to plasma processing during semiconductor fabrication.
- 2. Description of Related Art
- In the fabrication of semiconductor based devices (e.g. integrated circuits or flat panel displays) layers of material may alternately be deposited onto and etched from a wafer or substrate surface (e.g., the semiconductor wafer or the glass panel). As is well known in the art, the etching of the deposited layer(s) may be accomplished by a variety of techniques, including plasma-enhanced etching. In plasma-enhanced etching, the actual etching of the wafer or substrate takes place inside a plasma processing chamber. During the etching process, a plasma is formed from a suitable etchant source gas to etch areas of the wafer or substrate that are unprotected by a mask, leaving behind the desired pattern.
- There are two types of plasmas that are employed in plasma-enhanced etching, namely, confined plasmas and unconfined plasmas. Unconfined plasmas touch the plasma processing chamber walls and may contaminate the wafer or substrate by re-depositing atoms from the chamber walls on to the wafer or substrate. Typically, the plasma processing chamber walls are made of materials that are incompatible to the wafer or substrate. With confined plasma, there is little or no contamination since the plasma is stopped by some means from reaching the chamber walls. Thus, confined plasmas provide a level of cleanliness that is not provided by well-known unconfined plasmas.
- In prior art systems plasma can be prevented from reaching the chamber walls by establishing a variety of repulsive fields, either electric or magnetic in nature. By way of example, the plasma is confined by a plurality of confinement rings resident within the chamber walls and by means of draining charge out of the plasma just before it can reach the inner limits of the confinement rings. Since the confinement rings are made from an insulating material they will charge to a potential comparable to that of the plasma. Consequently, a repulsive electric field will emanate from the leading edge of each confinement ring that will keep plasma from protruding any further out toward the chamber walls.
- Referring to FIG. 1 there is shown an illustrative
prior art system 100 having a process chamber that generates a capacitively coupled RF plasma. By way of example and not of limitation, the illustrative system is an EXELAN system manufactured by Lam Research Corporation. Theillustrative system 100 includes a parallel plate plasma reactor such asreactor 100. Thereactor 100 includes a chamber having aninterior 102 maintained at a desired vacuum pressure by avacuum pump 104 connected to an outlet in a wall of the reactor. Etching gas can be supplied to the plasma reactor supplying gas fromgas supply 106. For example, a medium density plasma can be generated in the reactor by a dual frequency arrangement wherein RF energy fromRF source 108 is supplied through amatching network 110 to a poweredelectrode 112. TheRF source 108 is configured to supply RF power at 27 MHz and 2 MHz. Electrode 114 is a grounded electrode. A wafer orsubstrate 116 is supported by the poweredelectrode 112 and is etched with plasma generated by energizing the etch gasses into a plasma state. A plurality of confinement rings 120 a and 120 b confine the plasma. Other capacitively coupled reactors can also be used such as reactors wherein RF power is supplied to both electrodes such as the dual frequency plasma etch reactor described in commonly owned U.S. Pat. No. 6,090,304, the disclosure of which is hereby incorporated by reference. - Referring to FIG. 2 there is shown a cross-sectional view of the
interior 102 of theplasma processing chamber 100. Theinterior 102 includesconfinement rings interior 102 ofplasma processing chamber 100, there is shown a poweredelectrode 122 on which is adapted to receive a wafer orsubstrate 124. The poweredelectrode 124 can be implemented with any suitable chucking system, e.g. electrostatic, mechanical, clamping, vacuum, or the like, and is surrounded by aninsulator 126 such as a quartz focus ring. During etching,RF power supply 128 can communicate RF power having a frequency of about 2 MHz to about 27 MHz to poweredelectrode 122. Above wafer orsubstrate 124, there is disposed a groundedelectrode 130, which is coupled toconfinement rings electrode 132 abuts theinsulator ring 126 and is located near the poweredelectrode 122. In operation,RF power supply 128 communicates RF power to poweredelectrode 122 that is electrically coupled to groundedelectrode 130. - The invention provides a system and a method of controlling the ion energy and plasma density within a chamber configured to generate a plasma. In the illustrative embodiment, the plasma is generated with a capacitively coupled discharge. The semiconductor chamber includes a powered electrode, a power supply, a plurality of grounded electrodes, and an adjustable coupling to ground circuit. The powered electrode is configured to receive a wafer or substrate. The power supply is operatively coupled to the powered electrode. The plurality of grounded electrodes are configured to generate an electrical connection with the powered electrode. At least one of the grounded electrodes is electrically coupled to the adjustable coupling to ground circuit. The adjustable coupling to ground circuit is configured to modify the impedance of the grounded electrode. The ion energy is controlled by the adjustable coupling to ground circuit. The plasma density is controlled by the power supply.
- The adjustable coupling to ground circuit comprises either a capacitor or an inductor or a combination thereof. In one embodiment, the capacitor is a variable capacitor. In another embodiment the capacitor can have a fixed capacitance. A combination of fixed and variable capacitors and inductors can also be employed. In another embodiment an inductor, such as an inductor having variable inductance, is used instead of capacitor. In yet another embodiment, the combination of capacitor and inductor is used as the adjustable coupling to ground circuit.
- In operation, the illustrative chamber is configured to generate a confined plasma that is confined with a plurality of confinement rings. In the illustrative embodiment there is a first grounded electrode electrically coupled to an adjustable coupling to ground circuit. The adjustable coupling to ground circuit provides the first grounded electrode with a first impedance. The first impedance for the first grounded electrode is dependent on the capacitors or inductors used in the adjustable coupling to ground circuit. A second grounded electrode and third grounded electrode is coupled directly to ground. In the illustrative embodiment, the first impedance for the first grounded electrode is greater than the impedance associated with the other electrodes. As a result of these changes in impedance in the grounded electrodes the ion energy for the plasma can be controlled. For the illustrative example, the first grounded electrode with the higher impedance shifts the ion energy away from the first grounded electrode to the other grounded electrodes.
- Additionally, a method for controlling plasma in a plasma processing chamber is provided. The method comprises the first step of receiving a gas in the plasma processing chamber. The powered electrode is configured to receive a wafer or substrate and receives power from a power supply. The plasma is generated by electrically coupling the powered electrode to a first grounded electrode and a second grounded electrode. The impedance of the grounded electrodes is used to control the ion energy. The power supply is used to control the plasma density.
- Preferred embodiments of the present invention are shown in the accompanying drawings wherein:
- FIG. 1 is a prior art system having a process chamber that generates a capacitively coupled plasma.
- FIG. 2 is a cross-sectional view of the interior of the plasma processing chamber shown in FIG. 1.
- FIG. 3 is a cross-sectional view of a first embodiment of a plasma processing chamber having an adjustable coupling to ground circuit.
- FIG. 4 is a cross-sectional view of a second embodiment of a plasma processing chamber with an adjustable coupling to ground circuit.
- FIG. 5 is a cross-sectional view of a third embodiment of a plasma processing chamber with an adjustable coupling to ground circuit.
- FIG. 6 is a cross-sectional view of a fourth embodiment of a plasma processing chamber with an adjustable coupling to ground circuit.
- FIG. 7 is a cross-sectional view of a fifth embodiment of a plasma processing chamber with an adjustable coupling to ground circuit.
- FIG. 8 is flowchart for a method of controlling plasma in a processing
- In the following detailed description, reference is made to the accompanying drawings, which form a part of this application. The drawings show, by way of illustration, specific embodiments in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural changes may be made without departing from the scope of the present invention.
- Referring to FIG. 3 there is shown a first embodiment of a plasma processing chamber having an adjustable coupling to ground circuit. FIG. 3 is a cross-sectional view of a
processing chamber 200 configured to generate a capacitively coupled discharge. Theplasma processing chamber 200 is also referred to as a system. In operation, theplasma processing chamber 200 is configured to receive a gas that is converted into a plasma. By way of example and not of limitation, a relatively high gas flow rate is pumped into the plasma processing chamber. - The
plasma processing chamber 200 includes apowered electrode 202, apower supply 204, and a first groundedelectrode 206 having an adjustable coupling toground circuit 208. Thepowered electrode 202 is adapted to receive a wafer or substrate. Thepowered electrode 202 is operatively coupled to thepower supply 204 configured to generate a RF power. By way of example and not of limitation, the first grounded electrode has an area that is less than the area of thepowered electrode 202. Additionally, by way of example and not of limitation, thepower supply 204 is a RF power source. - A
quartz focus ring 210 surrounds thepowered electrode 202. Additionally, a second groundedelectrode ring 212 surrounds the first groundedelectrode 206. The second groundedelectrode ring 212 is electrically coupled to ground and does not have an adjustable coupling to ground circuit. A third groundedelectrode 214 is disposed below thequartz focus ring 210. The third groundedelectrode 214 also does not include an adjustable coupling to ground circuit. - The
plasma processing chamber 200 is configured to generate a confined plasma. Confinement rings 216 a and 216 b are configured to confine the plasma. Typically, the plasma processing chamber walls are made of materials that are incompatible with the wafer or substrate. Confined plasma provides little or no contamination from the processing chamber walls. It shall be appreciated by those skilled in the art that confined plasmas provide a level of cleanliness that is not provided by well-known unconfined plasmas. - The adjustable coupling to
ground circuit 208 is electrically coupled to the first groundedelectrode 206. The adjustable coupling toground circuit 208 is configured to modify the impedance of the first groundedelectrode 206. The ion energy and plasma density of the confined plasma is controlled by the adjustable coupling toground circuit 208. The adjustable coupling toground circuit 208 comprises acapacitor 218. Thecapacitor 218 has a fixed capacitance which is typically less than 1000 pf. However, it shall be appreciated by those skilled in the art that thecapacitor 218 can also be a variable capacitor. - The
capacitor 218 andresistor 220 of the adjustable coupling toground circuit 208 generates a first impedance which is different from the impedance of the second groundedelectrode 212 and the third groundedelectrode 214. As a result of these changes in impedance in the grounded electrodes, the ion energy and the plasma density for the plasma can be controlled. For the first embodiment, the first groundedelectrode 206 with the adjustable coupling toground circuit 208 has a higher impedance than both the second groundedelectrode 212 and the third groundedelectrode 214. The higher impedance from the first grounded electrode shifts the ion energy and plasma density away from the first grounded electrode so that the ion energy and plasma density is shifted to the grounded electrode having a lower impedance. - In the prior art, dual frequency RF power supplies, e.g. 27 MHz and 2 MHz, are used for the independent control of plasma density and ion energy. Here, the
processing chamber 200 permits the independent control of plasma density and ion energy with one RF source. The adjustable coupling toground circuit 208 in combination with the grounded electrodes permits the independent control of the ion energy with one RF source. The plasma density is mainly controlled by the total power supplied by thepower supply 204. - An illustrative mathematical model has been used to confirm the ability to control ion energy and the plasma density. Referring back to the prior art processing chamber in FIG. 1 and FIG. 2, a 1200V (peak-to-peak) and 27 MHz RF power is applied to the
bottom electrode 122, the resulting DC bias is approximately 302V and a plasma electrode voltage of −858V. Referring now to FIG. 3, an illustrative adjustable coupling to ground circuit comprises acapacitor 218 having a capacitance of 2 pF and aresistor 220 having a resistance of 3 μΩ. For theprocessing chamber powered electrode 202 to achieve a plasma density and plasma distribution similar to the plasma generated by theprocessing chamber 100. Additionally, due to the change in impedance at the first grounded electrode, the DC bias is only −200 V and the plasma electrode voltage is 659V. This illustrative example clearly shows that the plasma density and ion energy within theprocessing chamber 200 can be controlled by modifying the RF power and with the adjustable coupling to ground circuit. - Referring to FIG. 4, there is shown another
processing chamber 250 configured to control ion energy and plasma density. Apowered electrode 252 is operatively coupled to apower supply 254. Aquartz focus ring 256 surrounds thepowered electrode 252. A plasma is formed within theprocessing chamber 250, and is confined by confinement rings 258. A first groundedelectrode 260 has a surface area greater than the firstpowered electrode 252. The first groundedelectrode 260 is electrically coupled to avariable capacitor 262 that permits the adjustable coupling to ground. By way of example and not of limitation, thevariable capacitor 262 has a capacitance range of 5 pF to 1000 pF. A second groundedelectrode 264 is a grounded ring that surrounds the first groundedelectrode 260. The second groundedelectrode 264 is operatively coupled to anothervariable capacitor 266. A third groundedelectrode 268 is disposed beneath thequartz focus ring 256. - In operation the
processing chamber 250, permits a higher degree of control of the ion energy than theprocessing chamber 200. The improved control is provided by having two adjustable coupling to ground circuits. The first groundedelectrode 260 and the second groundedelectrode 264 have the capacity to modify their respective impedance. As a result, an operator can more effectively control the “top” of a confined plasma. - Referring to FIG. 5, there is shown yet another
processing chamber 300 with an adjustable coupling to ground circuit. Theprocessing chamber 300 shares much in common withprocessing chamber 250 of FIG. 4 such as confinement rings, a focus ring, a powered electrode and a power supply. The difference between processing chambers revolves around the grounded electrodes.Processing chamber 300 includes a first groundedelectrode 302 operatively coupled tovariable capacitor 304. A second groundedelectrode 304 is a ring that surround the first groundedelectrode 302. A third groundedelectrode 308 is disposed adjacent thepowered electrode 309. Avariable capacitor 310 is electrically coupled to the third grounded electrode. - In operation, it is expected that the combination of grounded electrodes in
processing chamber 300 permit an operator to control the ion energy on the top of a confined plasma and on the sides of the confined plasma. It shall be appreciated by those of ordinary skill in the art that thesecond ground electrode 306 can also be - adapted to possess an adjustable coupling to ground circuit to control its respective impedance.
- Referring to FIG. 6, there is shown a
processing chamber 350 having four grounded electrodes. The first groundedelectrode 352 is grounded and has an area smaller than thepowered electrode 353. The second groundedelectrode 354 is a ring that surrounds the first groundedelectrode 352. The second groundedelectrode 354 is electrically coupled to avariable capacitor 356 and has a variable impedance. The third groundedelectrode 358 is another ring that surrounds the second groundedelectrode 354. The third groundedelectrode 358 is operatively coupled to avariable capacitor 360 and also has a variable impedance. A fourth groundedelectrode 362 is located near thepowered electrode 353 and is operatively coupled to avariable capacitor 364. In operation, thisprocessing chamber 350 permits the operator to control the ion energy on the sides of a confined plasma. - Referring to FIG. 7 there is shown a processing chamber400 having a dual
frequency power supply 402. By way of example and not of limitation, the dual frequency power supply generates RF power at 27 MHz and 2 MHz. Apowered electrode 404 is operatively coupled to the dualfrequency power supply 402. A first groundedelectrode 406 is electrically coupled to an adjustable coupling toground circuit 408. The adjustable coupling toground circuit 408 includes avariable capacitor 410, andinductor 412, and aresistor 414. The adjustable coupling toground circuit 408 is configured to act as a high pass filter or a low pass filter, in addition to permitting control of the impedance for the first groundedelectrode 406. A second groundedelectrode 416 surrounds the first groundedelectrode 406. The second groundedelectrode 416 does not include an adjustable coupling to ground circuit. A third groundedelectrode 418 is adjacent topowered electrode 404. The third grounded electrode is electrically coupled toinductor 420. - In operation, the impedance of the third grounded electrode can be controlled by using an
inductor 418 instead of a capacitor. It shall be appreciated by those of ordinary skill in the art that the inductor can also be a variable inductor configured to generate a variety of different inductances which are controlled by the tool operator. - Furthermore, the impedance of the first grounded
electrode 410 can be controlled by the adjustable coupling to ground circuit'svariable capacitor 410,inductor 412 andresistor 414. Additionally, the adjustable coupling toground circuit 408 can be used to filter out either the 27 MHz RF power or the 2 MHz RF power of the dualfrequency power supply 402. - Referring to FIG. 8 there is shown a flowchart of a
method 450 for controlling plasma in a processing chamber by using the various systems described above. The method is initiated atprocess step 452 in which the operating parameters for plasma processing chamber are established. The operating parameters are specific to the type of task being performed. By way of example and not of limitation, for an etching process the type of gases are selected and the gas flow rates for each of the gases is determined. Then the operating pressure for the particular task is input into the tool. Additionally, the amount of RF power that is being applied is also provided. Further still, the time needed to perform the illustrative etching operation is also provided. Alternatively the systems described above can also be adapted to work with plasma-assisted chemical vapor deposition. The method then proceeds to processstep 454 in which the illustrative control parameters identified in process block 152 reach steady state and the desired set-points are reached. - The method then proceeds to process block456 in which RF power is communicated to a powered electrode. For illustrative purposes the systems above referred to a single powered electrode, however, it shall be appreciated by those skilled in the art having the benefit of this disclosure that the systems and methods described in this patent can be applied to processing chambers having a plurality of powered electrodes.
- At process block458 of the illustrative method, a confined plasma is then generated. Once the plasma is generated, a decision is made as to whether the ion energy and plasma density should be modified. This decision is made at
decision diamond 460. If the determination is to modify the ion energy of the confined plasma, then the method proceeds to process block 462 where the adjustable coupling circuit is modified. If the plasma density is must be changed then the method proceeds to process block 463, and the power is modified to control the plasma density. The adjustable coupling circuit controls the ion energy by modifying the impedance of grounded electrodes. The plasma density is controlled by the power supply. - If the determination at
decision diamond 460 is that the properties of the plasma are acceptable, the method then proceeds to process block 464 in which a substrate or wafer is processed. It shall be appreciated by those of ordinary skill in the art having the benefit of this disclosure that the adjustable coupling to ground circuit may be configured so that the illustrative confined plasma has the desired ion energy and plasma density. - Although the description above contains many different embodiments, these should not be construed as limiting the scope of the invention but as merely providing illustrations of some of the presently preferred embodiments of this invention. Thus, the scope of the invention should be determined by the appended claims and their legal equivalents rather than by the illustrative examples given.
Claims (22)
1. A semiconductor chamber configured to generate a plasma, said semiconductor chamber comprising:
a powered electrode configured to receive a wafer or substrate;
at least one electrode configured to generate an electrical connection with said powered electrode, said at least one electrode having a variable impedance; and
an adjustable coupling to ground circuit electrically coupled to said at least one electrode, said adjustable coupling to ground circuit configured to modify said variable impedance of said at least one electrode
2. The plasma processing chamber of claim 1 further comprising at least one confinement ring configured to confine said plasma.
3. The plasma processing chamber of claim 1 wherein said adjustable coupling to ground circuit comprises at least one capacitor.
4. The plasma processing chamber of claim 3 wherein said at least one capacitor comprises a variable capacitor.
5. The plasma processing chamber of claim 1 wherein said adjustable coupling to ground circuit comprises at least one inductor.
6. The plasma processing chamber of claim 4 wherein said at least one inductor comprises a variable-inductor.
7. The plasma processing chamber of claim 1 wherein said adjustable coupling to ground circuit comprises at least one inductor and one capacitor.
8. A semiconductor chamber configured to generate a plasma, said semiconductor chamber comprising:
a powered electrode configured to receive a wafer or substrate;
a first electrode configured to generate an electrical connection with said powered electrode, said first electrode having a first impedance; and
if a second electrode configured to generate another electrical connection with said powered electrode, said second electrode have a second impedance.
9. The method of claim 8 wherein said first impedance is different from said second impedance.
10. The plasma processing chamber of claim 9 further comprising at least one confinement ring configured to confine said plasma.
11. The semiconductor chamber of claim 10 further comprising a first adjustable coupling to ground circuit electrically coupled to said first electrode, said adjustable coupling to ground circuit configured to determine said first impedance.
12. The plasma processing chamber of claim 11 wherein said adjustable coupling to ground circuit comprises at least one capacitor.
13. The plasma processing chamber of claim 12 wherein said at least one capacitor comprises a variable capacitor.
14. The plasma processing chamber of claim 11 wherein said adjustable coupling to ground circuit comprises at least one inductor.
15. The plasma processing chamber of claim 14 wherein said at least one inductor comprises a variable inductor.
16. The plasma processing chamber of claim 11 wherein said adjustable coupling to ground circuit comprises at least one inductor and one capacitor.
17. A method for controlling a plasma in a plasma processing chamber, comprising:
causing a powered electrode to receive a wafer or substrate, said powered electrode electrically coupled to a power supply;
generating a plasma by electrically coupling said powered electrode to at least one other electrode having an adjustable coupling to ground circuit, said plasma having an ion energy and a plasma density; and
controlling said ion-energy with said adjustable coupling to ground circuit.
18. The method of claim 17 wherein said controlling of said ion energy is conducted by modifying an impedance for said adjustable coupling to ground circuit.
19. The method of claim 17 further comprising controlling said plasma density with said power supply.
20. The method of claim 18 wherein said adjustable coupling to ground circuit comprises a capacitor.
21. The method of claim 18 wherein said adjustable coupling to ground circuit comprises an inductor.
22. The method of claim 18 wherein said adjustable coupling to ground circuit comprises a capacitor and an inductor.
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/326,918 US20040118344A1 (en) | 2002-12-20 | 2002-12-20 | System and method for controlling plasma with an adjustable coupling to ground circuit |
JP2004563595A JP5129433B2 (en) | 2002-12-20 | 2003-12-17 | Plasma processing chamber |
EP03814023.2A EP1573795B1 (en) | 2002-12-20 | 2003-12-17 | A system and method for controlling plasma with an adjustable coupling to ground circuit |
AU2003297165A AU2003297165A1 (en) | 2002-12-20 | 2003-12-17 | A system and method for controlling plasma with an adjustable coupling to ground circuit |
PCT/US2003/039994 WO2004059716A1 (en) | 2002-12-20 | 2003-12-17 | A system and method for controlling plasma with an adjustable coupling to ground circuit |
KR1020057011629A KR101029948B1 (en) | 2002-12-20 | 2003-12-17 | A system and method for controlling plasma with an adjustable coupling to ground circuit |
CNB2003801061318A CN100380606C (en) | 2002-12-20 | 2003-12-17 | A device and method for controlling plasma with an adjustable coupling to ground circuit |
TW092136273A TWI327752B (en) | 2002-12-20 | 2003-12-19 | A plasma processing chamber for generating plasma |
US11/282,106 US8518211B2 (en) | 2002-12-20 | 2005-11-16 | System and method for controlling plasma with an adjustable coupling to ground circuit |
US13/952,055 US9190302B2 (en) | 2002-12-20 | 2013-07-26 | System and method for controlling plasma with an adjustable coupling to ground circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US10/326,918 US20040118344A1 (en) | 2002-12-20 | 2002-12-20 | System and method for controlling plasma with an adjustable coupling to ground circuit |
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US11/282,106 Continuation US8518211B2 (en) | 2002-12-20 | 2005-11-16 | System and method for controlling plasma with an adjustable coupling to ground circuit |
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US20040118344A1 true US20040118344A1 (en) | 2004-06-24 |
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US10/326,918 Abandoned US20040118344A1 (en) | 2002-12-20 | 2002-12-20 | System and method for controlling plasma with an adjustable coupling to ground circuit |
US11/282,106 Expired - Lifetime US8518211B2 (en) | 2002-12-20 | 2005-11-16 | System and method for controlling plasma with an adjustable coupling to ground circuit |
US13/952,055 Expired - Fee Related US9190302B2 (en) | 2002-12-20 | 2013-07-26 | System and method for controlling plasma with an adjustable coupling to ground circuit |
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US11/282,106 Expired - Lifetime US8518211B2 (en) | 2002-12-20 | 2005-11-16 | System and method for controlling plasma with an adjustable coupling to ground circuit |
US13/952,055 Expired - Fee Related US9190302B2 (en) | 2002-12-20 | 2013-07-26 | System and method for controlling plasma with an adjustable coupling to ground circuit |
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Also Published As
Publication number | Publication date |
---|---|
US9190302B2 (en) | 2015-11-17 |
KR20050089976A (en) | 2005-09-09 |
WO2004059716A1 (en) | 2004-07-15 |
AU2003297165A1 (en) | 2004-07-22 |
JP2006511059A (en) | 2006-03-30 |
CN100380606C (en) | 2008-04-09 |
US20060112878A1 (en) | 2006-06-01 |
CN1726584A (en) | 2006-01-25 |
JP5129433B2 (en) | 2013-01-30 |
EP1573795A4 (en) | 2007-07-18 |
US8518211B2 (en) | 2013-08-27 |
EP1573795A1 (en) | 2005-09-14 |
EP1573795B1 (en) | 2017-02-15 |
KR101029948B1 (en) | 2011-04-19 |
TWI327752B (en) | 2010-07-21 |
TW200423249A (en) | 2004-11-01 |
US20130306240A1 (en) | 2013-11-21 |
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