US20040154747A1 - Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same - Google Patents
Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same Download PDFInfo
- Publication number
- US20040154747A1 US20040154747A1 US10/769,878 US76987804A US2004154747A1 US 20040154747 A1 US20040154747 A1 US 20040154747A1 US 76987804 A US76987804 A US 76987804A US 2004154747 A1 US2004154747 A1 US 2004154747A1
- Authority
- US
- United States
- Prior art keywords
- chamber
- coil
- diameter
- semiconductor
- vacuum plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
Abstract
A vacuum plasma processor includes a roof structure including a dielectric window carrying (1) a semiconductor plate having a high electric conductivity so it functions as an electrode, (2) a hollow coil and (3) at least one electric shield. The shield, coil and semiconductor plate are positioned to prevent substantial coil generated electric field components from being incident on the semiconductor plate. During a first interval the coil produces an RF electromagnetic field that results in a plasma that strips photoresist from a semiconductor wafer. During a second interval the semiconductor plate and another electrode produce an RF electromagnetic field that results in a plasma that etches electric layers, underlayers and photoresist layers from the wafer.
Description
- The present invention relates generally to vacuum plasma processors using a coil and electrodes for establishing plasmas in a single processing chamber and, more particularly, to such a processor wherein the chamber includes a coil, a semiconductor electrode and a non-magnetic metal member arranged to prevent substantial electric field components the coil generates from being coupled to the semiconductor electrode. The invention also relates to a method of operating a vacuum plasma processor including a semiconductor electrode and a coil wherein fields derived from the electrode and coil establish plasmas with sufficient power to remove materials from a workpiece.
- Vacuum plasma processors for processing workpieces, such as semiconductor wafers, dielectric plates and metal plates, frequently employ coils or electrodes to establish RF electromagnetic fields for exciting gases in vacuum processing chambers to an RF plasma. The coil excitation is frequently referred to as inductive, while the electrode excitation is frequently referred to as capacitive.
- The capacitively and inductively coupled vacuum plasma processors are frequently employed to etch dielectric material from a semiconductor workpiece including an underlayer and a photoresist layer. The capacitive processors have an advantage over the inductive processors because the capacitive processors cause lower damage and have higher selectivity to the underlayer and photoresist layer. The inductive processors have an advantage over the capacitive processors because the inductive processors etch workpieces at a higher rate than the capacitive processors. The inductive processors have a higher oxygen dissociation rate to enable chambers to be cleaned more rapidly than can be attained by the capacitive processors.
- Hybrid processors having both capacitive and inductive RF plasma excitation have been recently introduced to perform various etch applications in the capacitive mode and efficient photoresist stripping and chamber cleaning in the inductive mode. The hybrid processors can increase processing throughput and reduce processing costs because the same chamber can be used for multiple purposes without opening the chamber or moving the workpiece from chamber to chamber to perform different processes.
- Collins et al., U.S. Pat. No. 6,077,384, and WO 97/08734 disclose prior art vacuum plasma processors including both inductive and capacitive coupling wherein a ceiling of a vacuum plasma processor chamber includes a high resistivity (e.g., 30 ohm-cm, i.e., a conductivity of 0.03 mho per cm, at room temperature) semiconductor window. The semiconductor window is between the processing chamber and an insulating structure carrying a flat or domed coil. The window extends from a central longitudinal axis of the chamber to a peripheral wall of the chamber. The semiconductor window must have high resistivity, i.e., low conductivity, to prevent substantial power dissipation in the semiconductor window. If the semiconductor window has a high conductivity, the electric field component of the coil electromagnetic field dissipates substantial power in the semiconductor so power necessary to achieve plasma ignition is not coupled to the gas. Collins et al. specifically states that if the semiconductor window has a high conductivity, such as a resistivity of 0.01 ohms-cms, i.e., a conductivity of 100 mhos/cm, the frequency of the RF induction field from the coil would have to be reduced to the kilohertz range or below to couple the field the coil generates through the semiconductor window.
- Collins et al. discloses a grounded non-magnetic metal Faraday shield and/or a powered or grounded non-magnetic metal backplane interposed between the semiconductor window and the coil. The non-magnetic metal backplane and Faraday shield include openings between turns of the coil and the semiconductor window so that the electric field component from the coil is coupled to the semiconductor window that extends continuously, in unbroken fashion, from the chamber center longitudinal axis to the chamber peripheral wall. The electric field components from the coil coupled through the Faraday shield and/or backplane have the same effect on the semiconductor window in the embodiments of FIGS. 25A and 37A of Collins et al. as in the embodiment of FIG. 1 of Collins et al., necessitating the use of a low conductivity semiconductor window in the embodiments of FIGS. 25A and 37A.
- The semiconductor window, the backplane and Faraday shield are all made of non-magnetic material to couple the coil magnetic field components to the gas in the chamber to excite and/or maintain the gas in a plasma state. The non-magnetic metal backplane and Faraday shield openings in the backplane and Faraday shield reduce eddy current losses that occur in response to the magnetic field components.
- The Collins et al. low conductivity semiconductor window has the disadvantage of applying a relatively low magnitude electromagnetic field to the plasma when the processor is operated in the capacitive mode. This is because the low conductivity silicon window does not have a high degree of electric field coupling to the plasma. Collins et al. state the semiconductor window is used for fluorine and polymerization scavenging from the plasma. The vast majority of the electromagnetic field etching which the Collins et al. device provides results from applying RF to an electrode on a chuck for the workpiece being processed.
- It is, accordingly, an object of the present invention to provide a new and improved vacuum plasma processor apparatus and method for selectively, at different times, coupling plasma excitation electromagnetic fields derived from inductive and capacitive sources to gas in a single vacuum plasma processing chamber.
- Another object of the invention is to provide a new and improved vacuum plasma processor apparatus and method wherein a single vacuum plasma processing chamber can efficiently perform many different processing steps and can be cleaned without being opened.
- A further object of the invention is to provide a new and improved vacuum plasma processor apparatus and method wherein a vacuum plasma processing chamber can be operated to provide relatively high processing throughput, to reduce the cost of workpiece fabrication.
- An additional object of the invention is to provide a new and improved vacuum plasma processor apparatus and method wherein a vacuum plasma processing chamber can be selectively operated to enable workpieces to be processed (1) during certain time periods at relatively high speeds and (2) at other times so workpiece damage is minimized, while providing high selectivity to underlayers and photoresist layers of wafers being processed.
- Still another object of the invention is to provide a new and improved vacuum plasma processor including a chamber with a semiconductor plasma excitation electrode in close proximity to a plasma excitation coil, wherein the semiconductor electrode has a high enough conductivity to establish RF processing plasmas having sufficient field strength to process, in particular, etch, workpieces in the chamber.
- Yet another object of the invention is to provide a new and improved vacuum plasma processor with a chamber including inductive and capacitive plasma excitation, wherein a semiconductor electrode, having high enough conductivity to establish an electromagnetic field of sufficient strength to process and, in particular, to etch a workpiece, is in proximity to a coil, but does not interact with electric field components of the electromagnetic field the coil generates and which are coupled to gas in the chamber.
- In accordance with one aspect of the invention, a vacuum plasma processor for processing workpieces comprises a vacuum chamber having an electrode arrangement, including a semiconductor member, for ionizing gas in the chamber to a plasma. A coil outside the chamber generates an electromagnetic field for ionizing gas in the chamber to a plasma. A non-magnetic metal arrangement is interposed between the coil and the semidiconductor member. The coil, non-magnetic metal arrangement and semiconductor member are positioned and arranged to prevent substantial electric field components of the electromagnetic field from being incident on the semiconductor member while enabling substantial electric and magnetic field components from the coil to be incident on the gas so the gas is ionized.
- Another aspect of the invention relates to a vacuum plasma processor for processing workpieces that comprises a vacuum chamber having an electrode arrangement, including a semiconductor member, for ionizing gas in the chamber to a plasma. A coil outside the chamber generates an electromagnetic field for ionizing gas in the chamber to a plasma. A non-magnetic metal arrangement is interposed between the coil and the semiconductor member. The coil, non-magnetic metal arrangement and semiconductor member are positioned and arranged so (1) no portion of the semiconductor member is outside the interior of an inner turn of the coil, and (2) the non-magnetic metal arrangement includes a member having a periphery approximately aligned with the interior of the coil inner turn.
- In first and second embodiments, the non-magnetic metal arrangement includes a member that is spaced from the semiconductor member and abuts the semiconductor member. In a third embodiment, the non-magnetic metal arrangement includes a first member abutting or adjacent the semiconductor member and a second member spaced from the semiconductor member.
- The dielectric window, semiconductor member, and non-magnetic metal arrangement are preferably in a roof structure of the chamber. The coil has an interior portion that is spaced from a chamber center portion so peripheral portions of the semiconductor member are inside or approximately aligned with the coil interior portion. The non-magnetic metal arrangement has peripheral portions spaced from the chamber center portion by approximately the same distance as the semiconductor member peripheral portions. When the non-magnetic metal arrangement includes first and second members respectively abutting and spaced from the semiconductor member, the first non-magnetic metal member has a periphery slightly outside the periphery of the semiconductor member and the first and second non-magnetic metal members have approximately aligned peripheries.
- In one preferred embodiment, particularly adapted for use with circular workpieces, e.g., semiconductor wafers, the chamber has a circular interior wall having a first diameter and the non-magnetic metal arrangement includes a member having a circular periphery having a second diameter, while the semiconductor member has a circular periphery having a third diameter. The chamber interior wall, the non-magnetic metal member and the semiconductor member are co-axial. The first diameter is greater than the second diameter, and the second diameter is approximately equal to the third diameter. The coil is substantially co-axial with the chamber interior wall and has a substantially circular innermost turn having a diameter approximately equal to the third diameter. When the non-magnetic metal member abuts or is adjacent the semiconductor member, the second diameter is slightly greater than the third diameter. When the non-magnetic metal member is adjacent the coil, it has a diameter slightly less than the interior diameter of the coil innermost turn. When the non-magnetic metal arrangement includes first and second circular members co-axial with the chamber interior wall and the first circular member abuts or is adjacent the semiconductor member and the second circular member is adjacent the coil, the second diameter is slightly greater than the third diameter and the second circular member has a diameter slightly less than the interior diameter of the coil innermost turn.
- In the preferred embodiments, the semiconductor member is a flat plate while the non-magnetic metal member(s) can be flat plates or flat rings.
- The semiconductor member has a high electric conductivity, e.g., no less than 0.01 mho/cm, and preferably at least 0.1 or 1.0 mho/cm so the semiconductor member can function as an efficient electrode to produce RF electromagnetic fields that supply sufficient power to the plasma to enable the plasma to remove materials from the workpiece.
- A further aspect of the invention concerns a method of removing material from a workpiece in a vacuum plasma processing chamber including first and second spaced plasma excitation electrodes, one of which includes a semiconductor interposed between a plasma excitation coil and gas in the chamber. The method comprises removing the material during a first interval by energizing the coil so it supplies an RF ionizing electromagnetic field to the gas. The RF ionizing electromagnetic field has magnetic field components that are coupled through the semiconductor to the gas and electric field components that are coupled to the gas without being intercepted by the semiconductor. The electromagnetic field has sufficient power to cause a plasma resulting from the gas to be sufficiently energetic to etch the material. The material is removed during a second interval by energizing the electrodes so they supply an RF ionizing electromagnetic field to the gas. The RF ionizing electromagnetic field is coupled between the electrodes to the gas and material.
- To maximize wafer processing throughout, the chamber is preferably maintained in a vacuum state between the first and second intervals and the chamber is cleaned during a third interval by energizing the coil so it supplies an RF ionizing electromagnetic field to the gas. The electromagnetic field derived during the third interval has sufficient power to cause a plasma resulting from the gas to be sufficiently energetic to etch material deposited on interior surfaces of the chamber. The chamber is maintained in the vacuum state during the third interval, and between the first and third intervals, and between second and third intervals. The material can be a dielectric layer or a photoresist layer that is etched during the second interval or photoresist that is stripped from the workpiece during the first interval.
- The above and still further objects, features and advantages of the present invention will become apparent upon consideration of the following detailed descriptions of several specific embodiments thereof, especially when taken in conjunction with the accompanying drawings.
- FIG. 1A is a partially schematic diagram including a side sectional view of a vacuum plasma processing chamber including a coil and electrode arrangement in accordance with one embodiment of the present invention;
- FIG. 1B is a partially schematic diagram including a side sectional view of a vacuum plasma processing chamber including a coil and electrode arrangement in accordance with another embodiment of the present invention;
- FIG. 2 is a top view of some of the elements included in the chamber of FIGS. 1A and 1B;
- FIG. 3 is a plot of electric field distribution in one-half of the chamber illustrated in FIGS. 1A and 2;
- FIG. 4 is a plot of power distribution in one-half of the chamber illustrated in FIGS. 1A and 2;
- FIG. 5 is a plot of electron density distribution in one-half of the chamber of FIGS. 1A and 2;
- FIG. 6 is a cross-sectional view of a modified roof structure for the chamber of FIG. 1A;
- FIG. 7 is a plot of electric field distribution for one-half of the chamber including the roof structure of FIG. 6;
- FIG. 8 is a plot of power distribution for one-half of the chamber illustrated in FIG. 6;
- FIG. 9 is a plot of electron density distribution for one-half of the chamber illustrated in FIG. 6;
- FIG. 10 is a cross-sectional view of a further embodiment of a roof structure for the chamber of FIG. 1A;
- FIG. 11 is a plot of electric field distribution for one-half of the chamber including the roof structure of FIG. 10;
- FIG. 12 is a plot of power distribution for one-half of the chamber including the roof structure of FIG. 10;
- FIG. 13 is a plot of electron density distribution for one-half of the chamber including the roof structure of FIG. 10;
- FIG. 14 is a cross-sectional view of a further roof structure for the chamber of FIG. 1A;
- FIG. 15 is a plot of electric field distribution for one-half of the chamber including the roof structure of FIG. 14;
- FIG. 16 is a plot of electron density distribution for one-half of the chamber including the roof structure of FIG. 14;
- FIG. 17 is a plot of electron density distribution for one-half of the chamber including the roof structure of FIG. 14;
- FIG. 18 is a cross-sectional view of an additional roof structure for the chamber of FIG. 1A;
- FIG. 19 is a plot of electric field distribution for one-half of the chamber including the roof structure of FIG. 18;
- FIG. 20 is a plot of power distribution for one-half of the chamber including the roof structure of FIG. 18;
- FIG. 21 is a plot of electron density distribution for one-half of the chamber including the roof structure of FIG. 18;
- FIG. 22 is a plot of electric field distribution for one-half of the chamber of FIG. 1A, when the chamber does not include a non-magnetic metal shield plate between a semiconductor electrode and a coil;
- FIG. 23 is a plot of power distribution for one-half of the chamber of FIG. 1A under the same circumstances as for the plot of FIG. 22; and
- FIG. 24 is a plot of electron density distribution for one-half of the chamber of FIG. 1A under the same circumstances as for the plot of FIG. 22.
- The vacuum plasma workpiece processor of FIG. 1A includes
vacuum chamber 10, shaped as a cylinder including groundedmetal wall 12 having a circular interior surface,metal base plate 14, andcircular roof structure 18, including horizontal dielectric (preferably silicon carbide)window 19 that carries circular non-magnetic metal (e.g., copper or aluminum) electric shield plate orlayer 21 that abuts a semiconductor member formed ascircular plate 23.Semiconductor plate 23 is located insidechamber 10 so it is exposed to the plasma in the chamber to a much greater extent thanmetal plate 21 because the semiconductor plate covers a substantial part of the metal plate.Plates -
Dielectric window 19 usually has the same thickness from its center to its periphery and a diameter exceeding the inner diameter ofwall 12 so the window peripheral portion bears against the top edge ofwall 12. Gaskets (not shown)seal vacuum chamber 10 in a conventional manner. The processor of FIG. 1A is typically used for etching a workpiece, usually in the form of a circular semiconductor wafer, frequently referred to as a substrate, or for depositing molecules on such a workpiece. -
Workpiece 32 is fixedly mounted inchamber 10 to a flat horizontal surface of workpiece holder, i.e., chuck or platen, 34.Chuck 34, typically of the electrostatic type, clampsworkpiece 32 in place by virtue ofDC power supply 42 applying a DC potential to electrode 33 on the chuck upper face. The interior surface ofwall 12,window 19, and each ofplates workpiece 32 and chuck 34 are concentric with center, vertically extendinglongitudinal axis 25 ofchamber 10.Vacuum pump 28, connected toport 30 inwall 12 or via a manifold to ports inbase 14, maintains the interior ofchamber 10 in a vacuum condition, at a pressure that can vary in the range of about 1-1000 millitorr. - A suitable processing or chamber cleaning etchant gas that is excited to an RF plasma is supplied to the interior of
chamber 10 fromgas source 12 vialine 24 andport 26 in the center ofwindow 19, as well as viadistribution conduit 27 inwindow 19 and distribution holes (not shown) inplates chamber 10 can be in response to an RF electromagnetic field inductively coupled to the gas in the chamber bycoil 36 or in response to RF electromagnetic fields capacitively coupled byplate 23 and the electrodes ofchuck 34 to the gas in the chamber. - The inductively or capacitively coupled RF field excites the gas in
chamber 10 to an RF plasma that processes (e.g., etches) workpiece 32 or cleans the chamber interior. The RF electromagnetic field fromcoil 36 is used for high etch rate processes and chamber cleaning because it has a higher oxygen dissociation rate than the electromagnetic fields produced betweenplate 23 andchuck 34. The electromagnetic field plasma excitation fromplate 23 causes lower workpiece damage, as well as higher selectivity to underlayers and photoresist layers on the workpieces, than the electromagnetic field excitation. In addition, the electromagnetic field excitation produced betweenplate 23 and chuck 34 often provides more uniform etching across the workpiece. - Because the gas in
chamber 10 can be inductively or capacitively excited to a plasma at different times, the same chamber at different times can (1) etch a dielectric layer or a photoresist layer fromworkpiece 32 with the capacitively excited plasma and (2) strip photoresist from the same workpiece with the inductively excited plasma. These two operations can be performed without opening the chamber or moving the workpiece between chambers. In addition, the chamber can be cleaned between workpiece processing operations with the inductively excited plasma without opening the chamber. Consequently,chamber 10 has increased workpiece throughput and reduced workpiece processing costs relative to prior art processors. - The RF electromagnetic field source includes two turn, hollow, spiral, substantially
planar metal coil 36, similar to the coil disclosed by Ogle, U.S. Pat. N0. 4,948,458.Coil 36 is typically made of square copper tubing having a hollow interior. It is to be understood thatcoil 36 is not necessarily planar and can have other shapes, e.g., a dome, and that the coil does not have to be hollow.Coil 36 is mounted on or immediately abovewindow 19 and excited byRF power source 38, usually having a fixed frequency of 13.56 MHz and a fixed amplitude envelope. Alternatively, ifplate 23 is driven by an RF source, e.g., a source having a frequency of 27 MHz, the same source, through a switching arrangement (not shown), can drivecoil 36 when the source is not drivingplate 23. The current incoil 36 generates a large enough electromagnetic field, including electric field components and magnetic field components, inchamber 10, to excite gas in the chamber to a plasma.Coil 36 has a length that is a substantial fraction of a wavelength of the frequency ofsource 38, so there are substantial voltage and current variations along the coil length. The voltage variations are sufficient to enable substantial RF voltage differences to be established between adjacent portions of the two turns, e.g., along the same radius of the coil. The voltage differences between adjacent radial portions of the two turns establish substantial RF electric field components in the chamber portions below the two turns of the coil. The RF electric fields ionize gas inchamber 10 to a plasma. The coil magnetic field components include magnetic lines of flux that extend intochamber 10 parallel tochamber axis 25. The magnetic lines of flux that are parallel toaxis 25 penetrateplates chamber 10 and continue around the chamber beyond the periphery ofplates -
Impedance matching network 40, connected between an output terminal ofRF source 38 and excitation terminals ofcoil 36, couples the output of the RF source to the coil, such that one end terminal of the coil is connected to an ungrounded output terminal ofnetwork 40 and the other terminal of the coil is connected to one electrode of capacitor 41, the other electrode of which is grounded.Impedance matching network 40 includes variable reactances (not shown), which a controller (not shown) varies in a known manner to achieve impedance matching betweensource 38 and aload including coil 36 in the plasma the coil drives. -
Electrode 33 ofchuck 34 is excited byRF power source 44 supplying an RF voltage to impedance matchingnetwork 46, including variable reactances (not shown). Typically,source 44 generates a fixedamplitude 2 MHz wave that is superimposed on a 27 MHz fixed amplitude wave.Matching network 46 couples the output ofsource 44 toelectrode 33. The previously mentioned controller controls the variable reactances of matchingnetwork 46 to match the impedance ofsource 44 to the load impedance coupled toelectrode 33. The load coupled toelectrode 33 is primarily plasma inchamber 10. As is well known, the RF energy that source 44 applies to electrode 33 interacts with the charged particles in the plasma to produce a DC bias onworkpiece 32. -
Semiconductor plate 23 can be grounded, as shown, or driven by a fixedamplitude 27 MHz voltage via a matching network (not shown). Ifplate 23 is driven by a 27 MHz voltage, the RF excitation forelectrode 33 ofchuck 34 is provided only by a 2 MHz voltage. -
Metal plate 21 is connected to ground or a source of the 27 MHz voltage to distribute the ground or RF voltage tosemiconductor plate 23, which electrically and mechanicallycontacts plate 21.Metal plate 21 can also float, i.e., be connected to no voltage source terminal, in whichcase semiconductor plate 23 also floats and is decoupled from a power supply terminal. - When
chamber 10 operates in the inductive plasma excitation mode, i.e.,coil 36 is energized,sources metal plate 21 is grounded, connected to a non-zero volt AC or DC power supply terminal, or floats. Whenchamber 10 operates in the capacitive plasma excitation mode, ground or voltage at a frequency of 27 MHz is applied tometal plate 21, andsource 44 remains energized, butsource 38 is de-energized whileswitch 51 connects the opposite terminals ofcoil 36 together and to ground. Hence,coil 36 cannot produce an electromagnetic field and has no influence on the electromagnetic field betweensemiconductor plate 23 and the electrodes inchuck 34 whenchamber 10 operates in the capacitive plasma excitation mode. In both modes,sources drive electrode 33 ofchuck 34. - To provide optimum processing of
workpiece 32, e.g., to obtain maximum etch uniformity and a desired etch profile on the workpiece under the many processing circumstances encountered in both the capacitive and inductive plasma excitation modes, the distance betweenworkpiece 32 andsemiconductor plate 23, as well ascoil 36, can be varied. To this end,output shaft 35 ofmotor 37 sealingly extends throughbase 14 and is drivingly connected to chuck 34 to translate the chuck andworkpiece 32 clamped to the chuck up and down, toward and away fromroof 18 and the fixed structures forming the roof. -
Semiconductor plate 23 has an electrical conductivity of at least 0.01 mho/cm, a result which can be achieved by forming the plate from silicon having high dopant concentrations or from other suitable semiconductors; the conductivities ofsemiconductor plate 23 can be 0.1 or 1.00 mho/cm or greater. The high conductivity ofsemiconductor plate 23 enables a large electromagnetic field to be established between first and second parallel plate electrodes respectively formed byplate 23 andelectrode 33. The electromagnetic field betweenplate 23 andelectrode 33 has sufficient power to ionize the gas in the volume between the semiconductor plate andworkpiece 36 to a plasma with a sufficient number of charge particles to provide efficient, uniform etching of the workpiece. This is in contrast with the Collins et al. references wherein the maximum conductivity of the semiconductor window is 0.03 mho/cm, i.e., a resistivity of 30 ohm-cm. In Collins et al., the RF electromagnetic field generated by the semiconductor window is sufficient only to provide polymerization and fluorine scavenging. - The high conductivity of
semiconductor plate 23 in the present invention is possible because of the geometry, i.e., position and arrangement, ofmetal plate 21,semiconductor plate 23 andcoil 36. These elements are arranged so there are: (1) no substantial electric field components coupled fromcoil 36 tosemi-conductor plate 23, and (2) substantial electric and magnetic field components coupled fromcoil 36 to the gas inchamber 10. The electric and magnetic field components of the electromagnetic field thatcoil 36 generates are coupled to the gas inchamber 10 to form and maintain the plasma. Becausemetal plate 21 andsemiconductor plate 23 are non-magnetic, the magnetic field components of the electromagnetic field thatcoil 19 generates is coupled to the gas in thechamber 10 to maintain the plasma. The electric field component thatcoil 19 generates is coupled to the gas inchamber 10 from the turns of the coil that are beyond the periphery ofmetal plate 21, that functions as an electrostatic shield to decouple the coil electric field components fromsemiconductor plate 23. - In accordance with another embodiment illustrated in FIG. 1B, the chamber of FIG. 1A is modified so an RF voltage is applied to
semiconductor plate 23, a different voltage is applied tometal plate 21, and dielectric, electric insulating layer 52 is positioned betweenplates metal plate 21 toDC source 54 or to ground or to an AC source that can be a radio frequency source. Iflead 53 applies DC or AC voltage tometal plate 21, the voltage helps to substantially prevent material inchamber 10 from being deposited on the bottom face ofwindow 19 below the turns ofcoil 36 to keep the window clean. Keepingwindow 19 clean is important whenchamber 10 operates in the inductive mode to assure coupling of the electromagnetic field fromcoil 36 to the chamber interior. Whenchamber 10 is operated in the inductive mode, the application of RF power tometal plate 21 helps to ignite the gas inchamber 10 into an RF plasma and to stabilize the RF plasma after ignition, as described in commonly-assigned WO99/34399. - When
chamber 10 is operated in the capacitive mode,RF source 38 andmatching network 40drive semiconductor plate 23 to the exclusion ofcoil 36; whenchamber 10 is operated in the inductive mode,source 38 andnetwork 40drive coil 36 to the exclusion ofplate 23. To these ends, the power output terminal ofnetwork 40 is selectively coupled viaswitch 54 tosemiconductor plate 23 orcoil 36. In the embodiment of FIG. 1B,RF sources - In the embodiment of FIGS. 1A, 1B and2, the foregoing results are achieved because the innermost turn of two
turn coil 36 has a periphery substantially aligned with the periphery ofmetal plate 21 and because the periphery ofsemiconductor plate 23 is inside the periphery ofmetal plate 23. As illustrated in FIG. 2, the turns ofcoil 36 are concentric circles that are connected by a radial and circumferentially extending straight metal coil segment. The innermost turn ofcoil 36 has a diameter substantially equal to the diameter ofmetal plate 21, which in turn has a diameter greater than the diameter ofsemiconductor plate 23. (For clarity, FIG. 2 includeswall 12,plates workpiece 32 andcoil 36 to provide an illustration of the relative sizes of one embodiment of these structures; FIG. 2, however, does not includedielectric window 19,shield 48, chuck 34 orbase 14.) As a result of this geometry,metal plate 21 prevents substantial coupling of the electric field component fromcoil 36 tosemiconductor plate 23, so the semiconductor plate, even though it has a high conductivity, does not dissipate substantial power resulting from the electric field component of the electromagnetic field thatcoil 36 generates. The electric field component ofcoil 36 and the power dissipation resulting from the electric field component thatcoil 36 generates are confined primarily to the gas inchamber 10 and are not coupled substantially tosemiconductor plate 23, as indicated by the plots of FIGS. 3 and 4. - The plots of FIGS.3-5, as well as the plots of FIGS. 7-9, 11-13, 15-17 and 19-24, are based on the same parameters for the operation of
chamber 10. These plots are based on 500 watts at 13.56 MHz being supplied tocoil 36, a chamber pressure of 10 millitorr, and a nitrogen flow rate of 100 sccm intochamber 10. The parameters ofchamber 10 for the foregoing plots are such that the interior diameter ofwall 12 is 21″ (53 cms), the gap between the lower face ofwindow 19 and the upper face ofchuck 34 is 5⅛″ (13 cms),window 19 is a silicon carbide plate having a thickness of 1″ (2.54 cms),semiconductor plate 23 has a 14″ (35.5 cms) diameter and an electrical conductivity of 0.01 mho/cm, andworkpiece 32 is a 12″ (30.5 cm) silicon wafer. The results indicated by the plots of FIGS. 3-5, 7-9, 11-13, 15-17 and 19-24 are similar to those forsemiconductor plates 23 having conductivities of 0.1 and 1.0 mho/cm. Because these plots are for symmetrical distributions, the plots are for one-half ofchamber 10, fromaxis 25 to the interior surface ofwall 12. - FIG. 3 is a plot of electric field contours such that lowest
electric field contour 61 represents electric fields less than 6.6 volts/cm, while the highestelectric field contour 68 represents electric fields in excess of 48.9 volts/cm. Thus, the electric field outsidecontour 61 is less than 6.6 volts/cm, while the electric field insidecontour 67 exceeds 48.9 volts/cm.Intermediate contours electric field contour 68 occurs between the turns ofcoil 36, while the lowestelectric field contour 61 occurs in the portion ofchamber 10, remote fromcoil 36. The lowestelectric field contour 61, associated with electric field concentrations of 6.6 volts/cm or less, does not intercept any portion ofnon-magnetic metal plate 21 orsemiconductor plate 23. The electric field values associated withcontour 61 are insufficient to excite the gas inchamber 10 to a plasma. In contrast,contours chamber 10, have sufficiently high values to excite the gas in the chamber to a plasma that is maintained by the magneticfield component coil 36 generates. - The plot of FIG. 4 includes power distribution (in watts per cubic centimeter) contours71-77 which indicate there is (1) virtually no power dissipation in
metal plate 21 orsemiconductor plate 23 and (2) substantial power dissipation in the interior ofchamber 10 immediately below the portion ofwindow 19 aligned with the turns ofcoil 36. In particular,minimum power contour 71, associated with a power dissipation of less than 0.065 watts/cu cm, exists in most of the interior ofchamber 10, including all parts ofplates Contours chamber 10 immediately below the two turns ofcoil 36. Contours 72-76 represent significant power dissipation in the gas inchamber 10; this power dissipation causes the gas to be excited to and maintained in the plasma state. - The electron density distribution plot of FIG. 5, which represents the number of charge particles per cubic centimeter in
chamber 10, includes contours 81-91, respectively representing electron density contours of 3.36×109, 5.02×109, 6.70×109, 8.37×109, 1.17×1010, 1.24×1010, 1.67×1010, 1.84×1010, 2.01×1010, 2.18×1010, and 2.34×1010 electrons per cubic centimeter. Thus, there is a relatively low number of charge particles outside ofcontour 81 where a sheath is formed between the plasma inchamber 10 and the chamber boundaries, including the interior surface ofwall 12,chuck 34,workpiece 32,window 19, as well asplates chuck 34. - FIG. 6 is a side sectional view of a further embodiment of the invention, wherein the roof structure of FIGS. 1A and 2 is replaced by a roof structure including non-magnetic metal plate or
layer 101 andsilicon plate 103, respectively mounted on the top and bottom faces ofsilicon carbide window 102.Metal plate 101 andsemiconductor plate 103 are continuous, i.e., have no gaps between the central portions thereof and the peripheries thereof. The interior periphery of the inner turn of twoturn coil 36, carried by the upper face ofwindow 102, is (1) spaced slightly outside (about ¼″) the periphery ofmetal plate 101 and (2) aligned with the periphery ofsemiconductor plate 103. -
Metal layer 101 can be connected to an RF or DC source, or can float when the chamber of FIG. 1A is modified to include the roof structure of FIG. 6 and is operated in the inductive mode.Semiconductor plate 103 can also be supplied with AC or DC power or float when the chamber of FIG. 1A includes the roof structure of FIG. 6 and is operated in the inductive mode. When the chamber of FIG. 1A includes the roof structure of FIG. 6 and the chamber is operated in the capacitive mode,semiconductor plate 103 is either connected to a ground terminal or to a 27 MHz power source. - When the chamber of FIG. 1A is modified to include the structure of FIG. 6, the electric field distribution is as illustrated by the plot of FIG. 7. FIG. 7 includes contours111-118 respectively representing maximum electric field boundaries of 5.18, 7.77, 12.96, 25.92, 28.52, 31.11, 33.70 and 36.30 volts/cm.
Contour 112 intercepts the periphery ofsemiconductor plate 103 to cause power dissipation in the periphery ofsemiconductor plate 103, as illustrated by the power deposition distribution contours of FIG. 8, which includespower dissipation contours contours semiconductor plate 103. Because of the power dissipation insemiconductor plate 103, less power is available for the gas inchamber 10, so that the roof structure of FIG. 6 is not as desirable as the roof structure of FIGS. 1A, 1B and 2. With the roof structure of FIGS. 1A and 2, the maximum power dissipated insilicon plate 21 is less than 0.065 watts/cu cm, while the roof structure of FIG. 6 results in a maximum power dissipation insemiconductor plate 103 of 0.26 watts/cu cm. - FIG. 8 also indicates that the maximum power dissipation in the gas in the chamber of FIG. 1A, when modified to include the roof structure of FIG. 6, is less than for the roof structure of FIGS. 1A and 2. The maximum power dissipation contour in FIG. 8 is 0.31 watts/cu cm, while the maximum power dissipation, as indicated by FIG. 4, for the chamber of FIGS. 1A and 2 is 0.46 watts/cu cm.
- The electron density distribution plot of FIG. 9 includes contours131-142, respectively representing maximum boundaries, in numbers of electrons per cubic centimeter, of 2.81×109, 4.22×109, 5.62×109, 7.02×109, 8.43×109, 9.83×109, 1.12×1010, 1.40×1010, 1.55×1010, 1.69×1010, 1.83×1010, and 1.97×1010. The contours of FIG. 9 are for electron density distribution when the roof structure of FIG. 6 replaces the roof structure of FIGS. 1A and 2 in the chamber of FIG. 1A. The shapes of the contours of FIG. 9 are similar to the shapes of the contours of FIG. 5. However, the 2.3×1010
highest contour 91 of FIG. 5 is substantially greater than the 1.97×1010contour 142 of FIG. 9. Hence, the plasma established by the roof structure of FIGS. 1A and 2 is capable of a faster etch rate than the roof structure of FIG. 6 because there are more charge carriers in the plasma of the chamber including the roof structure of FIGS. 1A and 2 than for the roof structure of FIG. 6. However, the overall effect of the roof structure of FIG. 6 is appreciably better than for a roof structure that does not include a shield plate. - According to a further modification illustrated in FIG. 10, the roof structure includes a dielectric window150 that carries
non-magnetic metal ring 151,semiconductor plate 153 and two turn,hollow coil 36.Metal ring 151 is formed as a plate secured to an annular groove on the bottom face ofwindow 152 or is a thin metal coating deposited on the bottom face of the window.Metal ring 151 andsemiconductor plate 153, mounted on the lower face ofwindow 152, abut and are arranged and positioned relative to each other andcoil 36, mounted on the upper face ofwindow 152, so that (1) the periphery ofplate 153 is aligned with the interior periphery of the inner turn ofcoil 36, (2) the outer periphery ofring 151 extends slightly beyond the periphery ofplate 153 and the interior periphery ofcoil 36, and (3) the inner diameter ofring 151 is less than the diameter ofplate 153. In the particular configuration of FIG. 10,metal ring 151 has an inner diameter of 12.4″ (31.5 cm) and an outer diameter of 14.25″ (36.2 cm), so the outer periphery ofring 151 extends ¼″ beyond the periphery ofsemiconductor plate 153 and the inner periphery of the inner turn ofcoil 36. Becausemetal piece 151 andsemiconductor plate 153 are in abutting relation, power is supplied tometal ring 151 on the same basis that power is supplied tometal plate 21 in the embodiment of FIGS. 1A and 2. - The electric field and power dissipation distributions plots of FIGS. 11 and 12 indicate no substantial power is dissipated in
semiconductor plate 153 when the roof structure of FIG. 10 replaces the roof structure of FIGS. 1A and 2. The electron distribution plot of FIG. 13 indicates the electron density for the roof structure of FIG. 10 and for the roof structure of FIGS. 1A and 2 are virtually the same. - FIG. 11 includes maximum
electric field contours metal ring 151 andsemiconductor plate 153 are in the lowestelectric field contour 161. There is very little difference between the electric field contours of FIGS. 3 and 11. - FIG. 12 includes
maximum power contours metal ring 151 orsemiconductor plate 153 in excess of 0.064 watts/cu cm. The 0.45 watts/cu cm maximumpower dissipation contour 177 is very similar to the maximum power dissipation in FIG. 4 of 0.46 watts/cu cm. It thus follows that the 2.2×1010 watts/cu cm maximumelectron density contour 179 of FIG. 13 is very similar to the maximum electron particle distribution of 2.34×1010 of FIG. 10. - According to a further embodiment of the invention, as illustrated in FIG. 14, the roof structure of FIGS. 1A and 2 is replaced by a roof structure including
non-magnetic metal ring 181 that sits on the upper surface ofdielectric window 182, which carriessemiconductor plate 183 on its lower surface. The upper face ofwindow 182 carriescoil 36, the inner periphery of which is slightly outside the periphery ofring 181. The outer diameter ofmetal ring 181 and the diameter ofsemiconductor plate 183 are the same, i.e., 14″, andmetal ring 181 has an inner diameter of 13″.Metal ring 181 andsemiconductor plate 183 of FIG. 14 are energized in the same manner described supra in connection with themetal layer 101 andsemiconductor plate 103 of FIG. 6. - FIGS. 15 and 16 are plots of the electric field and power dissipation contours when the roof structure of FIG. 14 replaces the roof structure of FIGS. 1A and 2. The plots of FIGS. 15 and 16 are very similar to the plots of FIGS. 7 and 8, respectively. FIG. 15 includes maximum
electric field contours Contours semiconductor plate 183, causing power dissipation in the periphery ofplate 183, as indicated bymaximum power contours power dissipation contour 208 in the plot of FIG. 16 is associated with a power dissipation of 0.32 watts/cu cm. - The roof structure of FIG. 14 results in the maximum electron density contours of FIG. 17. The minimum and maximum
electron density contours - According to a further embodiment of the invention, illustrated in FIG. 18, the roof structure of FIGS. 1A and 2 is modified to include non-magnetic metal rings221 and 223 respectively carried on the upper and lower faces of dielectric window of 225, which also carries
semiconductor plate 227 andcoil 36.Metal ring 223,semiconductor plate 227 andcoil 36 are respectively configured in the same manner asmetal ring 151,semiconductor plate 153 andcoil 36 in the embodiment of FIG. 10.Metal ring 221, on the top face ofdielectric window 225 is configured in the same way asmetal ring 181, in the embodiment of FIG. 14. Metal rings 181 and 221 can be grounded, powered or float, as desired. - The roof structure of FIG. 18 provides optimum results as seen from the plots of FIGS. 19, 20 and21. Maximum
electric field contours semiconductor plate 227 is withincontour 231. Consequently, as indicated by FIG. 20, the power dissipation insemiconductor plate 227 is less than 0.67 watts/cu cm, the value associated withcontour 240 and the maximum power dissipation in the gas inchamber 10 exceeds the 0.49 watts/cu cm. ofcontour 241. The electron density contours of FIG. 21 indicate that the maximum electron density resulting from the roof structure of FIG. 18 replacing the roof structure of FIGS. 1A and 2 is in excess of 2.32×1010 charges per cubic centimeter indicated bycontour 243. - The results achieved by the present invention are to be contrasted to the situation wherein no electric shield plate is interposed between
coil 36 andsemiconductor plate 23. FIGS. 22, 23 and 24 are respectively plots of the electric field, power dissipation and electron density distribution for such a situation. - FIG. 22 includes maximum
electric field contours semiconductor plate 23, such thatcontour 251 is approximately 2″ (10 cm) from the center ofsemiconductor plate 23. Consequently, there is an appreciable electric field distribution in almost 70% of the area ofsemiconductor plate 23 and almost all the power thatcoil 36 couples intodielectric window 19 and intochamber 10 is dissipated insemiconductor plate 23, as illustrated bycontours semiconductor plate 23 as the portion of the plate which is coupled to the electric fields associated with contours 251-254.Contours Contours 271 and 272, respectively associated with power dissipations of 0.79 and 0.12 watts/cu cm, are the only appreciably sized power dissipation contours in the gas inchamber 10 when the chamber does not include a non-magnetic metal shield plate, as in the embodiments of FIGS. 1A, 1B, 2, 6, 10, 14 or 18. Consequently, without the shield plate, the electron density distribution inchamber 10 is quite low, as indicated by the contours of FIG. 24. The highest maximum electrondensity distribution contour 273 in FIG. 24 has a value of 9.39×109 electrons/cu cm, while the lowest contour 274 is associated with an electron density of 1.34×109 electrons/cu cm. Hence, the highest maximumelectron density contour 273 of FIG. 24 is less than one-half of the highest maximum electron density contour of FIG. 21. - While there have been described and illustrated specific embodiments of the invention, it will be clear that variations in the details of the embodiments specifically illustrated and described may be made without departing from the true spirit and scope of the invention as defined in the appended claims.
Claims (39)
1. A vacuum plasma processor for processing workpieces comprising a vacuum chamber having an inlet for supplying gas to the chamber; an electrode arrangement, including a semiconductor member, for ionizing gas in the chamber to a plasma, a coil outside the chamber for generating an electromagnetic field for ionizing gas in the chamber to a plasma, a non-magnetic metal arrangement interposed between the coil and the semiconductor member; the coil, non-magnetic metal arrangement and semiconductor member being positioned and arranged for preventing substantial electric field components of the electromagnetic field from being incident on the semiconductor member while enabling substantial electric and magnetic field components from the coil to be incident on the gas for ionizing the gas.
2. The vacuum plasma processor of claim 1 wherein the chamber includes a dielectric window interposed between the coil and the chamber and arranged for coupling the electromagnetic field to the chamber.
3. The vacuum plasma processor of claim 2 wherein the dielectric window is interposed between the coil and the semiconductor member.
4. The vacuum plasma processor of claim 3 wherein the non-magnetic metal arrangement includes a member abutting the semiconductor member.
5. The vacuum plasma processor of claim 3 wherein the non-magnetic metal arrangement includes a member that is spaced from the semiconductor member.
6. The vacuum plasma processor of claim 3 wherein the non-magnetic metal arrangement includes first and second members respectively abutting and spaced from the semiconductor member.
7. The vacuum plasma processor of claim 3 wherein the dielectric window, semiconductor member and non-magnetic metal arrangement are in a roof structure of the chamber, the chamber having a center portion, the coil having an interior portion that is spaced from the chamber center portion so peripheral portions of the semiconductor member are outside the coil interior portion, the non-magnetic metal arrangement having peripheral portions spaced from the chamber center portion by approximately the same distance as the semiconductor member peripheral portions.
8. The vacuum plasma processor of claim 7 wherein the non-magnetic metal arrangement includes first and second members respectively abutting and spaced from the semiconductor member, the first non-magnetic metal member having a periphery slightly outside the periphery of the semiconductor member, the first and second non-magnetic metal members having approximately aligned peripheries.
9. The vacuum plasma processor of claim 7 wherein the chamber has a circular interior wall having a first diameter, the non-magnetic metal arrangement including a member having a circular periphery having a second diameter, the semiconductor member having a circular periphery having a third diameter; the chamber interior wall, the non-magnetic metal member and the semiconductor member being co-axial, the first diameter being greater than the second diameter, and the second diameter being approximately equal to the third diameter.
10. The vacuum plasma processor of claim 9 wherein the coil is substantially co-axial with the chamber interior wall and has a substantially circular innermost turn having a diameter approximately equal to the third diameter.
11. The vacuum plasma processor of claim 10 wherein the non-magnetic metal member is adjacent the semiconductor member and the second diameter is slightly greater than the third diameter.
12. The vacuum plasma processor of claim 10 wherein the non-magnetic metal member is adjacent the coil and has a diameter slightly less than the interior diameter of the coil innermost turn.
13. The vacuum plasma processor of claim 10 wherein the non-magnetic magnetic metal arrangement includes first and second circular members co-axial with the chamber interior wall, the first circular member being adjacent the semiconductor member and the second diameter being slightly greater than the third diameter, the second circular member being adjacent the coil and having a diameter slightly less than the interior diameter of the coil innermost turn.
14. The vacuum plasma processor of claim 13 wherein the first circular member abuts the semiconductor member and is carried by the dielectric window so the semiconductor member is in the chamber, the second circular member and the coil being carried by the dielectric window so they are outside the chamber, the periphery of the second member being electrically insulated from the coil.
15. The vacuum plasma processor of claim 1 further including a workpiece holder in the chamber having a workpiece bearing surface and a drive for varying the distance between the workpiece bearing surface and the coil.
16. The vacuum plasma processor of claim 15 , further including an RF source for applying RF bias to the workpiece via the workpiece holder.
17. The vacuum plasma processor of claim 1 further including a workpiece holder in the chamber, and a source for supplying an RF bias to the workpiece via the workpiece holder.
18. The vacuum plasma processor of claim 1 further including a power supply arrangement for supplying RF ion energization to the coil and the workpiece and for supplying (a) voltages to the semiconductor member and the non-magnetic metal arrangement and (b) a reference voltage to a metal wall of the chamber.
19. The vacuum plasma processor of claim 18 wherein the power supply arrangement is arranged for supplying the reference voltage to the semiconductor member.
20. The vacuum plasma processor of claim 19 wherein the power supply arrangement is arranged for supplying the reference voltage to the non-magnetic metal arrangement.
21. The vacuum plasma processor of claim 18 wherein the power supply arrangement is arranged for supplying the reference voltage to the non-magnetic metal arrangement.
22. The vacuum plasma processor of claim 18 wherein the power supply arrangement is arranged for supplying an RF energization voltage to the semiconductor member.
23. The vacuum plasma processor of claim 1 wherein the semi-conductor member has an electrical conductivity greater than 0.01 mho/cm.
24. The vacuum plasma processor of claim 1 wherein the semi-conductor member has an electrical conductivity greater than 0.1 mho/cm.
25. A vacuum plasma processor for processing workpieces comprising a vacuum chamber having an inlet for supplying gas to the chamber; an electrode arrangement, including a semiconductor member, for ionizing gas in the chamber to a plasma, a coil outside the chamber for generating an electromagnetic field for ionizing gas in the chamber to a plasma, a non-magnetic metal arrangement interposed between the coil and the semiconductor member; the coil, non-magnetic metal arrangement and semiconductor member being positioned and arranged so (a) no portion of the semiconductor member is outside the interior of an inner turn of the coil and (b) the non-magnetic metal arrangement includes a member having a periphery approximately aligned with the interior of the coil inner turn.
26. The vacuum plasma processor of claim 25 wherein the chamber includes a dielectric window interposed between the coil and the chamber and arranged for coupling the electromagnetic field to the chamber.
27. The vacuum plasma processor of claim 26 wherein the chamber has a circular interior wall having a first diameter, the non-magnetic metal arrangement including a member having a circular periphery having a second diameter, the semiconductor member having a circular periphery having a third diameter; the chamber interior wall, the non-magnetic metal member and the semiconductor member being co-axial, the first diameter being greater than the second diameter, and the second diameter being approximately equal to the third diameter.
28. The vacuum plasma processor of claim 27 wherein the coil is substantially co-axial with the chamber interior wall and has a substantially circular innermost turn having a diameter approximately equal to the third diameter.
29. The vacuum plasma processor of claim 28 wherein the non-magnetic metal member is adjacent the semiconductor member and the second diameter is slightly greater than the third diameter.
30. The vacuum plasma processor of claim 28 wherein the non-magnetic metal member is adjacent the coil and has a diameter slightly less than the interior diameter of the coil innermost turn.
31. The vacuum plasma processor of claim 28 wherein the non-magnetic metal arrangement includes first and second circular members co-axial with the chamber interior wall, the first circular member being adjacent the semiconductor member and the second diameter is slightly greater than the third diameter, the second circular member being adjacent the coil and has a diameter slightly less than the interior diameter of the coil innermost turn.
32. The vacuum plasma processor of claim 31 wherein the first circular member abuts the semiconductor member and is carried by the dielectric window so the semiconductor member is in the chamber, the second circular member and the coil being carried by the dielectric window so they are outside the chamber, the periphery of the second member being electrically insulated from the coil.
33. A method of removing material from a workpiece in a vacuum plasma processing chamber including first and second spaced plasma excitation electrodes, one of which includes a semiconductor interposed between a plasma excitation coil and gas in the chamber, comprising removing the material during a first interval by energizing the coil so it supplies an RF ionizing electromagnetic field to the gas, the RF ionizing electromagnetic field having magnetic field components that are coupled through the semiconductor to the gas and electric field components that are coupled to the gas without being intercepted by the semiconductor, the electromagnetic field having sufficient power to cause a plasma resulting from the gas to be sufficiently energetic to etch the material, removing the material during a second interval by energizing the electrodes so they supply an RF ionizing electromagnetic field to the gas, the RF ionizing electromagnetic field being coupled between the electrodes to the gas and material.
34. The method of claim 33 further including maintaining the chamber in a vacuum state between the first and second intervals.
35. The method of claim 34 further including cleaning the chamber during a third interval by energizing the coil so it supplies an RF ionizing electromagnetic field to the gas, the RF ionizing electromagnetic field derived during the third interval having magnetic field components that are coupled through the semiconductor to the gas and electric field components that are coupled to the gas without being intercepted by the semiconductor, the electromagnetic field derived during the third interval having sufficient power to cause a plasma resulting from the gas to be sufficiently energetic to etch material deposited on interior surfaces of the chamber, and maintaining the chamber in the vacuum state during the third interval, and between the first and third intervals, and between second and third intervals.
36. The method of claim 33 wherein the material includes a dielectric layer that is etched during the second interval.
37. The method of claim 33 wherein the material includes an underlayer that is etched during the second interval.
38. The method of claim 33 wherein the material includes a photo-resist layer that is etched during the second interval.
39. The method of claim 33 wherein the material includes photoresist that is stripped from the workpiece during the first interval.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/769,878 US7105102B2 (en) | 2000-10-13 | 2004-02-03 | Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same |
US11/467,449 US8114246B2 (en) | 2000-10-13 | 2006-08-25 | Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/689,616 US6716303B1 (en) | 2000-10-13 | 2000-10-13 | Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same |
US10/769,878 US7105102B2 (en) | 2000-10-13 | 2004-02-03 | Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/689,616 Division US6716303B1 (en) | 2000-10-13 | 2000-10-13 | Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/467,449 Continuation US8114246B2 (en) | 2000-10-13 | 2006-08-25 | Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same |
Publications (2)
Publication Number | Publication Date |
---|---|
US20040154747A1 true US20040154747A1 (en) | 2004-08-12 |
US7105102B2 US7105102B2 (en) | 2006-09-12 |
Family
ID=32031189
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/689,616 Expired - Lifetime US6716303B1 (en) | 2000-10-13 | 2000-10-13 | Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same |
US10/769,878 Expired - Lifetime US7105102B2 (en) | 2000-10-13 | 2004-02-03 | Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same |
US11/467,449 Expired - Fee Related US8114246B2 (en) | 2000-10-13 | 2006-08-25 | Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/689,616 Expired - Lifetime US6716303B1 (en) | 2000-10-13 | 2000-10-13 | Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/467,449 Expired - Fee Related US8114246B2 (en) | 2000-10-13 | 2006-08-25 | Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same |
Country Status (1)
Country | Link |
---|---|
US (3) | US6716303B1 (en) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040025791A1 (en) * | 2002-08-09 | 2004-02-12 | Applied Materials, Inc. | Etch chamber with dual frequency biasing sources and a single frequency plasma generating source |
US20050286607A1 (en) * | 2004-06-28 | 2005-12-29 | Samsung Electronics Co., Ltd. | Temperature measuring apparatus using change of magnetic field |
US20070074814A1 (en) * | 2005-10-04 | 2007-04-05 | Seok-Hyun Hahn | Apparatus and method for treating a substrate with plasma, and facility for manufacturing semiconductor devices |
US20070084563A1 (en) * | 2005-10-18 | 2007-04-19 | Applied Materials, Inc. | Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor |
US7264688B1 (en) | 2006-04-24 | 2007-09-04 | Applied Materials, Inc. | Plasma reactor apparatus with independent capacitive and toroidal plasma sources |
US20070247073A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency |
US20070245960A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion density |
US20070246161A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with a toroidal plasma source and a VHF capacitively coupled plasma source with variable frequency |
US20070247074A1 (en) * | 2006-04-24 | 2007-10-25 | Alexander Paterson | Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution |
US20070245959A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density |
US20070245961A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Dual plasma source process using a variable frequency capacitively coupled source for controlling plasma ion dissociation |
US20070246443A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Process using combined capacitively and inductively coupled plasma process for controlling plasma ion dissociation |
US20070245958A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Dual plasma source process using a variable frequency capacitively coupled source for controlling ion radial distribution |
US20070246163A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with independent capacitive and inductive plasma sources |
US20070246162A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with an inductive plasma source and a VHF capacitively coupled plasma source with variable frequency |
US20090317976A1 (en) * | 2008-06-20 | 2009-12-24 | Mitsubishi Electric Corporation | Etching system and method of manufacturing semiconductor device |
US20120090783A1 (en) * | 2010-10-13 | 2012-04-19 | Tokyo Electron Limited | Plasma processing apparatus and processing gas supply structure thereof |
US20120267050A1 (en) * | 2011-04-21 | 2012-10-25 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6516742B1 (en) * | 1998-02-26 | 2003-02-11 | Micron Technology, Inc. | Apparatus for improved low pressure inductively coupled high density plasma reactor |
US20060081337A1 (en) * | 2004-03-12 | 2006-04-20 | Shinji Himori | Capacitive coupling plasma processing apparatus |
TWI574318B (en) | 2004-06-21 | 2017-03-11 | Tokyo Electron Ltd | A plasma processing apparatus, a plasma processing method, and a computer-readable recording medium |
US8911590B2 (en) * | 2006-02-27 | 2014-12-16 | Lam Research Corporation | Integrated capacitive and inductive power sources for a plasma etching chamber |
JP5740203B2 (en) * | 2010-05-26 | 2015-06-24 | 東京エレクトロン株式会社 | Plasma processing apparatus and processing gas supply structure thereof |
US9786471B2 (en) * | 2011-12-27 | 2017-10-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Plasma etcher design with effective no-damage in-situ ash |
US9437400B2 (en) | 2012-05-02 | 2016-09-06 | Lam Research Corporation | Insulated dielectric window assembly of an inductively coupled plasma processing apparatus |
JP2014146401A (en) * | 2013-01-29 | 2014-08-14 | Showa Denko Kk | Method and device for manufacturing magnetic recording medium |
JP6118130B2 (en) | 2013-02-25 | 2017-04-19 | 昭和電工株式会社 | Method and apparatus for manufacturing magnetic recording medium |
JP6175265B2 (en) | 2013-04-02 | 2017-08-02 | 昭和電工株式会社 | Method for manufacturing magnetic recording medium |
CN107369602B (en) * | 2016-05-12 | 2019-02-19 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
CN105903724B (en) * | 2016-06-22 | 2017-11-21 | 西北大学 | Short space inner surface Discharge Cleaning method and apparatus |
JP7378276B2 (en) * | 2019-11-12 | 2023-11-13 | 東京エレクトロン株式会社 | plasma processing equipment |
WO2023081882A1 (en) * | 2021-11-05 | 2023-05-11 | Helion Energy, Inc. | Ceramic fibers for shielding in vacuum chamber systems and methods for using same |
KR102646591B1 (en) * | 2022-05-13 | 2024-03-12 | 세메스 주식회사 | Substrate processing apparatus |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5811357A (en) * | 1997-03-26 | 1998-09-22 | International Business Machines Corporation | Process of etching an oxide layer |
US5989929A (en) * | 1997-07-22 | 1999-11-23 | Matsushita Electronics Corporation | Apparatus and method for manufacturing semiconductor device |
US20010004552A1 (en) * | 1998-07-09 | 2001-06-21 | Betty Tang | Plasma etch process in a single inter-level dielectric etch |
US20020092826A1 (en) * | 1991-06-27 | 2002-07-18 | Jian Ding | Low ceiling temperature process for a plasma reactor with heated source of a polymer-hardening precursor material |
US6461974B1 (en) * | 2000-10-06 | 2002-10-08 | Lam Research Corporation | High temperature tungsten etching process |
US20030036287A1 (en) * | 2000-02-17 | 2003-02-20 | Ji Ding | Precision dielectric etch using hexafluorobutadiene |
US6699399B1 (en) * | 1997-11-12 | 2004-03-02 | Applied Materials, Inc | Self-cleaning etch process |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6077384A (en) | 1994-08-11 | 2000-06-20 | Applied Materials, Inc. | Plasma reactor having an inductive antenna coupling power through a parallel plate electrode |
KR100238627B1 (en) * | 1993-01-12 | 2000-01-15 | 히가시 데쓰로 | Plasma processing apparatus |
US5685942A (en) * | 1994-12-05 | 1997-11-11 | Tokyo Electron Limited | Plasma processing apparatus and method |
JP3364675B2 (en) * | 1997-09-30 | 2003-01-08 | 東京エレクトロンエイ・ティー株式会社 | Plasma processing equipment |
US6280563B1 (en) * | 1997-12-31 | 2001-08-28 | Lam Research Corporation | Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma |
-
2000
- 2000-10-13 US US09/689,616 patent/US6716303B1/en not_active Expired - Lifetime
-
2004
- 2004-02-03 US US10/769,878 patent/US7105102B2/en not_active Expired - Lifetime
-
2006
- 2006-08-25 US US11/467,449 patent/US8114246B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020092826A1 (en) * | 1991-06-27 | 2002-07-18 | Jian Ding | Low ceiling temperature process for a plasma reactor with heated source of a polymer-hardening precursor material |
US5811357A (en) * | 1997-03-26 | 1998-09-22 | International Business Machines Corporation | Process of etching an oxide layer |
US5989929A (en) * | 1997-07-22 | 1999-11-23 | Matsushita Electronics Corporation | Apparatus and method for manufacturing semiconductor device |
US6699399B1 (en) * | 1997-11-12 | 2004-03-02 | Applied Materials, Inc | Self-cleaning etch process |
US20010004552A1 (en) * | 1998-07-09 | 2001-06-21 | Betty Tang | Plasma etch process in a single inter-level dielectric etch |
US20030036287A1 (en) * | 2000-02-17 | 2003-02-20 | Ji Ding | Precision dielectric etch using hexafluorobutadiene |
US6461974B1 (en) * | 2000-10-06 | 2002-10-08 | Lam Research Corporation | High temperature tungsten etching process |
Cited By (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040025791A1 (en) * | 2002-08-09 | 2004-02-12 | Applied Materials, Inc. | Etch chamber with dual frequency biasing sources and a single frequency plasma generating source |
US20070020937A1 (en) * | 2002-08-09 | 2007-01-25 | Jin-Yuan Chen | Etch chamber with dual frequency biasing sources and a single frequency plasma generating source |
US20050286607A1 (en) * | 2004-06-28 | 2005-12-29 | Samsung Electronics Co., Ltd. | Temperature measuring apparatus using change of magnetic field |
US7275865B2 (en) * | 2004-06-28 | 2007-10-02 | Samsung Electronics Co., Ltd. | Temperature measuring apparatus using change of magnetic field |
US20070074814A1 (en) * | 2005-10-04 | 2007-04-05 | Seok-Hyun Hahn | Apparatus and method for treating a substrate with plasma, and facility for manufacturing semiconductor devices |
US20070084563A1 (en) * | 2005-10-18 | 2007-04-19 | Applied Materials, Inc. | Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor |
US20070087455A1 (en) * | 2005-10-18 | 2007-04-19 | Applied Materials, Inc. | Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor |
US7695633B2 (en) | 2005-10-18 | 2010-04-13 | Applied Materials, Inc. | Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor |
US7695983B2 (en) | 2005-10-18 | 2010-04-13 | Applied Materials, Inc. | Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor |
US20070245959A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density |
US7727413B2 (en) * | 2006-04-24 | 2010-06-01 | Applied Materials, Inc. | Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density |
US20070247074A1 (en) * | 2006-04-24 | 2007-10-25 | Alexander Paterson | Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution |
US20070245960A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion density |
US20070245961A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Dual plasma source process using a variable frequency capacitively coupled source for controlling plasma ion dissociation |
US20070246443A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Process using combined capacitively and inductively coupled plasma process for controlling plasma ion dissociation |
US20070245958A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Dual plasma source process using a variable frequency capacitively coupled source for controlling ion radial distribution |
US20070246163A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with independent capacitive and inductive plasma sources |
US20070246162A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with an inductive plasma source and a VHF capacitively coupled plasma source with variable frequency |
US7780864B2 (en) * | 2006-04-24 | 2010-08-24 | Applied Materials, Inc. | Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution |
US7645357B2 (en) | 2006-04-24 | 2010-01-12 | Applied Materials, Inc. | Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency |
US20070247073A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency |
US7264688B1 (en) | 2006-04-24 | 2007-09-04 | Applied Materials, Inc. | Plasma reactor apparatus with independent capacitive and toroidal plasma sources |
US20070246161A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with a toroidal plasma source and a VHF capacitively coupled plasma source with variable frequency |
US20090317976A1 (en) * | 2008-06-20 | 2009-12-24 | Mitsubishi Electric Corporation | Etching system and method of manufacturing semiconductor device |
US20120090783A1 (en) * | 2010-10-13 | 2012-04-19 | Tokyo Electron Limited | Plasma processing apparatus and processing gas supply structure thereof |
US9117633B2 (en) * | 2010-10-13 | 2015-08-25 | Tokyo Electron Limited | Plasma processing apparatus and processing gas supply structure thereof |
US20120267050A1 (en) * | 2011-04-21 | 2012-10-25 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
Also Published As
Publication number | Publication date |
---|---|
US6716303B1 (en) | 2004-04-06 |
US20070044915A1 (en) | 2007-03-01 |
US8114246B2 (en) | 2012-02-14 |
US7105102B2 (en) | 2006-09-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8114246B2 (en) | Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same | |
US8222157B2 (en) | Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof | |
US6623596B1 (en) | Plasma reactor having an inductive antenna coupling power through a parallel plate electrode | |
US5607542A (en) | Inductively enhanced reactive ion etching | |
US9767996B2 (en) | Application of powered electrostatic faraday shield to recondition dielectric window in ICP plasmas | |
US7585384B2 (en) | Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor | |
JP3438696B2 (en) | Plasma processing method and apparatus | |
US6524432B1 (en) | Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density | |
JP3482904B2 (en) | Plasma processing method and apparatus | |
JP3381916B2 (en) | Low frequency induction type high frequency plasma reactor | |
US5605637A (en) | Adjustable dc bias control in a plasma reactor | |
KR100743875B1 (en) | Electrode assembly | |
EP0685873B1 (en) | Inductively coupled plasma reactor with an electrode for enhancing plasma ignition | |
US7632375B2 (en) | Electrically enhancing the confinement of plasma | |
JP2001185542A (en) | Plasma processor and plasma processing method using the same | |
US20050051273A1 (en) | Plasma processing apparatus | |
JP2002313785A (en) | High frequency plasma treatment equipment | |
US20030037879A1 (en) | Top gas feed lid for semiconductor processing chamber | |
KR100501823B1 (en) | Method of plasma generation and apparatus thereof | |
EP0469597B1 (en) | Plasma processing reactor | |
KR100501821B1 (en) | Method of plasma generation and apparatus thereof | |
JP3379506B2 (en) | Plasma processing method and apparatus | |
JP2002050618A (en) | Apparatus and method for processing substrate with plasma | |
JPH0964015A (en) | Etching device | |
JPH11241189A (en) | Inductive coupling discharge etching device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 12TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1553) Year of fee payment: 12 |