US20040201107A1 - Transistor assembly and method for the production thereof - Google Patents
Transistor assembly and method for the production thereof Download PDFInfo
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- US20040201107A1 US20040201107A1 US10/487,802 US48780204A US2004201107A1 US 20040201107 A1 US20040201107 A1 US 20040201107A1 US 48780204 A US48780204 A US 48780204A US 2004201107 A1 US2004201107 A1 US 2004201107A1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
- Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region
Definitions
- the invention relates to a transistor arrangement and to a method of its fabrication.
- the transistor arrangement is constructed such that semi-conductor material is vertically introduced into micro-holes of a film laminate consisting of two plastic films with an interposed metal layer, the semiconductor material being provided with contacts by metalization of the upper and lower surface of the film laminate.
- the micro holes used are cylindrical ion trace channels which are formed in polymer or polyester films by ion bombardment and a subsequent etching treatment. These ion trace channels may be filled by electrode deposition, precipitation in a chemical bath or by other suitable processes, with connecting semiconductors, or, initially, by a hollow-cylindrical insulation layer followed by a connecting semiconductor.
- the film laminate into which the semiconductor material is embedded is fabricated by a film being coated with a metal layer, for instance by vaporization, and by a second film connected by an adhesive agent to the metal layer on the surface of the first film. Thereafter, ion bombardment is carried out in an accelerator. Along the ion trace, the ion bombardment results in the formation in the film of amorphous channels of a diameter of a few Angstroms. The ion trace channels thus formed are then sensitized for a subsequent etching treatment in the film which causes micro holes to be formed in the plastic films. Prior to sensitization, a further sensitization may optionally be performed with a chemical sensitizing agent.
- the method of forming micro holes in films has heretofore been used in connection with a single-layer film and without a metal layer between the layers of film for fabricating micro filters and in other applications. It has not been used, however, for fabricating transistors.
- the metal layer is removed by a further etching process in the area of the holes.
- the metal film may be removed sufficiently to extend just to the ion trace channel in the films.
- the interposed metal layer serves as a gate terminal, and for that reason it should either form a Schottky contact (MESFET), or it should be insulated from the semiconductor (MOSFET) as shown in S.M. Sze, Physics of Semiconductor Devices, Wiley, N.Y., 1981, pp. 312 seq. and pp. 321 seq.
- semiconductor material may be grown from the edge of the interposed metal layer by electrode deposition to form a MESFET, thus forming a Schottky contact.
- an insulation layer is initially deposited, for instance by precipitation in a bath, at the interior wall of the entire channel.
- An insulation layer may also be formed only in the area of the metal layer by chemically or electro-chemically converting, e.g. oxidizing, it from the micro holes. Instead of forming an insulation layer, the metal layer may be removed by etching around the micro hole thus forming an insulating cavity.
- the semiconductor material is introduced by electrode deposition or by precipitation in a chemical bath. Drain and source contacts are formed by a subsequent metalization of the upper and lower surfaces of the film laminate. It may be necessary to metalize at least one surface of the film laminate prior to the electrode deposition in order to provide the electrode required for the application of a potential during the electrode deposition.
- By structuring the metalization layer by means of conventional lithographic processes, e.g. in matrix form, it is possible to connect transistors to form transistor units which may be energized together.
- the formation of transistor area arrangements may be augmented by masking the film laminate before the ion bombardment. Last but not least it is also possible to fabricate individual transistors at a predetermined site by bombarding the film laminate by a controlled ion beam for forming individual ion trace channels.
- the advantage of the cylindrical vertical arrangement of the transistors is that they are mechanically very sturdy since the film is both flexible and stretchable. Moreover, the organic film material is substantially softer than inorganic transistor material. Consequently, all bending, shearing and pressure forces are wholly absorbed by the film material, thus rendering the characteristic curve of the transistors and other electrical parameters substantially constant, notwithstanding any bending, flexing and tensile forces.
- the micro holes may be fabricated with diameters as small as 30 nm and since they may be filled with semiconductor material, it is possible to fabricate transistors on the nanometer scale without lithography and without masking technology.
- the channel length of the transistors is determined by the space charge range of the center gate contact. As a rule, it is substantially smaller than the thickness of the film which determined the distance between source and drain. Accordingly, the transistor is best operated in a depletion mode, see German patent specification 199 16 403 C.
- the small diameter and the small channel length open the possibilities of operating the transistor in a quantum regime.
- a film of A 4 size may be used with closely adjacent vertical transistors arrayed as optical pixels with about 1,00 transistors. While the transistors are distributed randomly, the large number of transistors in the pixels nevertheless permits a precise energization of the pixels. At a diameter of the transistors of 150 nm and an average spacing of 500 nm, 1,000 transistors result in a size of pixel of about 20 ⁇ 20 ⁇ m, which constitutes a conventional size.
- FIG. 1 is a sectional view of a transistor in accordance with the invention.
- FIG. 2 is a sectional view of a second variant of a transistor
- FIG. 3 depicts the energy band gap of a transistor in accordance with the invention.
- a metal layer 2 e.g. Al, Cu, Ag
- a PET film 1 of 5 ⁇ m thickness
- the metal surface is then adhesively connected to a second PET film 2 of 5 ⁇ m thickness.
- ion trace channels For forming ion trace channels, sections of about A 4 size are bombarded in an accelerator with fast ions, preferably krypton or xenon ions, at an energy of several 100 MeV at a density of about 10 8 /cm 2 .
- the resultant ion trace channels are then pretreated with a sensitizing agent (e.g. dimethyl formamide, pyridine, dioxane) before being etched in a solution of sodium hydroxide (NaOH).
- a sensitizing agent e.g. dimethyl formamide, pyridine, dioxane
- NaOH sodium hydroxide
- the center metal layer is etched (in a solution of sodium hydroxide if it is Al, for instance, in HNO3 if it is CU, etc.) Thereafter, the micro holes 4 are lined, by precipitation in a chemical bath or by another process as described in German patent specification 199 16 403, with an insulation layer 5 of TiO 2 or another oxide.
- a source contact 6 or a drain contact 7 is fabricated by vapor deposition of platinum on the second surface of the film laminate.
- the center metal layer 2 constitutes the gate contact.
- micro holes 4 flaring conically outwardly are formed with a diameter in the area of the gate of about 100 nm.
- the metal layer consists of aluminum. At its margin, it is electro-chemically oxidized to aluminum oxide 9 at the etched out micro holes 4 so that the need to apply an insulation layer is avoided.
- FIG. 3 depicts the energy conditions of the electron flow in such a transistor.
- the gate results in a space charge zone of a length of about 400 nm in which the potential of the CuSNC may be shifted. Since CuSNC is p-conductive, depletion in the channel results in a positive gate potential. When the depletion extends through the entire thickness of the semiconductor cylinder, the conductivity between source and drain is significantly reduced. At a negative gate potential enrichment occurs in the channel. However, since the length of the channel is insignificant relative to the spacing between source and drain, the increase in conductivity between source and drain remains insignificant.
Abstract
Description
- 1. Field of the Invention
- The invention relates to a transistor arrangement and to a method of its fabrication.
- 2. The Prior Art
- For fabricating thin-film transistors it is known to apply semiconductor material on a flexible substrate in a planar arrangement. When mechanical stress is applied to the substrates by bending, shearing or stretching, the thin-film transistors are also subjected to stress which can easily lead to damage of the semiconductor layers or to their separation from the substrate layer.
- It is an object of the invention to provide for a transistor arrangement and a method of its fabrication, using a flexible substrate wherein mechanical stresses do not result in deterioration of the function of the transistors.
- In accordance with the invention, the object is accomplished by [the characteristics of
claims - Other objects will in part be obvious and will in part appear hereinafter.
- Accordingly, the transistor arrangement is constructed such that semi-conductor material is vertically introduced into micro-holes of a film laminate consisting of two plastic films with an interposed metal layer, the semiconductor material being provided with contacts by metalization of the upper and lower surface of the film laminate.
- In accordance with the invention, the micro holes used are cylindrical ion trace channels which are formed in polymer or polyester films by ion bombardment and a subsequent etching treatment. These ion trace channels may be filled by electrode deposition, precipitation in a chemical bath or by other suitable processes, with connecting semiconductors, or, initially, by a hollow-cylindrical insulation layer followed by a connecting semiconductor.
- The film laminate into which the semiconductor material is embedded is fabricated by a film being coated with a metal layer, for instance by vaporization, and by a second film connected by an adhesive agent to the metal layer on the surface of the first film. Thereafter, ion bombardment is carried out in an accelerator. Along the ion trace, the ion bombardment results in the formation in the film of amorphous channels of a diameter of a few Angstroms. The ion trace channels thus formed are then sensitized for a subsequent etching treatment in the film which causes micro holes to be formed in the plastic films. Prior to sensitization, a further sensitization may optionally be performed with a chemical sensitizing agent. The method of forming micro holes in films has heretofore been used in connection with a single-layer film and without a metal layer between the layers of film for fabricating micro filters and in other applications. It has not been used, however, for fabricating transistors.
- Following etching of the polymer films applied to both sides of the metal layer, the metal layer is removed by a further etching process in the area of the holes. For this purpose, the metal film may be removed sufficiently to extend just to the ion trace channel in the films. In the proposed transistor, the interposed metal layer serves as a gate terminal, and for that reason it should either form a Schottky contact (MESFET), or it should be insulated from the semiconductor (MOSFET) as shown in S.M. Sze, Physics of Semiconductor Devices, Wiley, N.Y., 1981, pp. 312 seq. and pp. 321 seq. Where the material combination of metal and semiconductor permits it, semiconductor material may be grown from the edge of the interposed metal layer by electrode deposition to form a MESFET, thus forming a Schottky contact.
- For fabricating a MOSFET an insulation layer is initially deposited, for instance by precipitation in a bath, at the interior wall of the entire channel. An insulation layer may also be formed only in the area of the metal layer by chemically or electro-chemically converting, e.g. oxidizing, it from the micro holes. Instead of forming an insulation layer, the metal layer may be removed by etching around the micro hole thus forming an insulating cavity.
- After the formation of micro holes from the ion trace channels has been completed, the semiconductor material is introduced by electrode deposition or by precipitation in a chemical bath. Drain and source contacts are formed by a subsequent metalization of the upper and lower surfaces of the film laminate. It may be necessary to metalize at least one surface of the film laminate prior to the electrode deposition in order to provide the electrode required for the application of a potential during the electrode deposition. By structuring the metalization layer by means of conventional lithographic processes, e.g. in matrix form, it is possible to connect transistors to form transistor units which may be energized together. The formation of transistor area arrangements may be augmented by masking the film laminate before the ion bombardment. Last but not least it is also possible to fabricate individual transistors at a predetermined site by bombarding the film laminate by a controlled ion beam for forming individual ion trace channels.
- The advantage of the cylindrical vertical arrangement of the transistors is that they are mechanically very sturdy since the film is both flexible and stretchable. Moreover, the organic film material is substantially softer than inorganic transistor material. Consequently, all bending, shearing and pressure forces are wholly absorbed by the film material, thus rendering the characteristic curve of the transistors and other electrical parameters substantially constant, notwithstanding any bending, flexing and tensile forces.
- Since the micro holes may be fabricated with diameters as small as 30 nm and since they may be filled with semiconductor material, it is possible to fabricate transistors on the nanometer scale without lithography and without masking technology. The channel length of the transistors is determined by the space charge range of the center gate contact. As a rule, it is substantially smaller than the thickness of the film which determined the distance between source and drain. Accordingly, the transistor is best operated in a depletion mode, see German patent specification 199 16 403 C. The small diameter and the small channel length open the possibilities of operating the transistor in a quantum regime.
- Moreover, the possible minute dimensions also yield advantages in respect of integrated control circuits.
- Many applications are possible. For use in the field of displays, a film of A4 size may be used with closely adjacent vertical transistors arrayed as optical pixels with about 1,00 transistors. While the transistors are distributed randomly, the large number of transistors in the pixels nevertheless permits a precise energization of the pixels. At a diameter of the transistors of 150 nm and an average spacing of 500 nm, 1,000 transistors result in a size of pixel of about 20×20 μm, which constitutes a conventional size.
- The novel features which are considered to be characteristic of the invention are set forth with particularity in the appended claims. The invention itself, however, in respect of its structure, construction and lay-out as well as manufacturing techniques, together with other objects and advantages thereof, will be best understood from the following description of preferred embodiments when read in connection with the appended drawings, in which:
- FIG. 1 is a sectional view of a transistor in accordance with the invention;
- FIG. 2 is a sectional view of a second variant of a transistor; and
- FIG. 3 depicts the energy band gap of a transistor in accordance with the invention.
- The method of fabrication will be explained on the basis of the sectional representation of a single transistor in FIG. 1. Initially, a metal layer2 (e.g. Al, Cu, Ag) is applied by vapor deposition on one surface of a PET (polyethylene therephthalate)
film 1 of 5 μm thickness. To form a laminate, the metal surface is then adhesively connected to asecond PET film 2 of 5 μm thickness. - For forming ion trace channels, sections of about A4 size are bombarded in an accelerator with fast ions, preferably krypton or xenon ions, at an energy of several 100 MeV at a density of about 108/cm2. The resultant ion trace channels are then pretreated with a sensitizing agent (e.g. dimethyl formamide, pyridine, dioxane) before being etched in a solution of sodium hydroxide (NaOH). Depending upon the etching time,
micro holes 4 will result with a diameter between 30 nm and 20 μm will result. Thereafter, the center metal layer is etched (in a solution of sodium hydroxide if it is Al, for instance, in HNO3 if it is CU, etc.) Thereafter, themicro holes 4 are lined, by precipitation in a chemical bath or by another process as described in German patent specification 199 16 403, with aninsulation layer 5 of TiO2 or another oxide. - This is followed by an electrochemical implantation of p-conductive copper thiocyanate8 (CuSCN) in the micro holes 4. The dosage may be changed by adjusting the potential ratios; see C. Rost et al., Appl. Phys. Left. 75, 692 (1999). To apply a potential, one surface of the film laminate is provided with a metal layer of gold which subsequently will constitute a
source contact 6 or adrain contact 7. The electro deposition may take place in a conventional potentiostate. A 0.05 molar Cu(BF4)2 solution and 0.025 molar KSCN in ethanol have been found to be suitable at a cathode voltage of −(0.2 to 0.8) V relative to a platinum reference electrode. It has been found to be possible to form hexagonal crystals of <001> or <101> orientation. - Following the complete filling of the
micro holes 4 with CuSCN, asource contact 6 or adrain contact 7 is fabricated by vapor deposition of platinum on the second surface of the film laminate. Thecenter metal layer 2 constitutes the gate contact. - Another possibility is shown in FIG. 2. As the etching progresses,
micro holes 4 flaring conically outwardly are formed with a diameter in the area of the gate of about 100 nm. The metal layer consists of aluminum. At its margin, it is electro-chemically oxidized toaluminum oxide 9 at the etched outmicro holes 4 so that the need to apply an insulation layer is avoided. - FIG. 3 depicts the energy conditions of the electron flow in such a transistor. The gate results in a space charge zone of a length of about 400 nm in which the potential of the CuSNC may be shifted. Since CuSNC is p-conductive, depletion in the channel results in a positive gate potential. When the depletion extends through the entire thickness of the semiconductor cylinder, the conductivity between source and drain is significantly reduced. At a negative gate potential enrichment occurs in the channel. However, since the length of the channel is insignificant relative to the spacing between source and drain, the increase in conductivity between source and drain remains insignificant.
Claims (46)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/327,218 US7579281B2 (en) | 2001-08-27 | 2006-01-09 | Transistor assembly and method of its fabrication |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10142913A DE10142913B4 (en) | 2001-08-27 | 2001-08-27 | Vertical transistor arrangement with a flexible substrate consisting of plastic films and method for the production thereof |
DE10142913.4 | 2001-08-27 | ||
PCT/DE2002/003191 WO2003026034A1 (en) | 2001-08-27 | 2002-08-27 | Transistor assembly and method for the production thereof |
Related Child Applications (1)
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US11/327,218 Division US7579281B2 (en) | 2001-08-27 | 2006-01-09 | Transistor assembly and method of its fabrication |
Publications (1)
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US20040201107A1 true US20040201107A1 (en) | 2004-10-14 |
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US10/487,802 Abandoned US20040201107A1 (en) | 2001-08-27 | 2002-08-27 | Transistor assembly and method for the production thereof |
US11/327,218 Expired - Fee Related US7579281B2 (en) | 2001-08-27 | 2006-01-09 | Transistor assembly and method of its fabrication |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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US11/327,218 Expired - Fee Related US7579281B2 (en) | 2001-08-27 | 2006-01-09 | Transistor assembly and method of its fabrication |
Country Status (7)
Country | Link |
---|---|
US (2) | US20040201107A1 (en) |
EP (1) | EP1421633B1 (en) |
JP (1) | JP4102755B2 (en) |
AT (1) | ATE427566T1 (en) |
DE (2) | DE10142913B4 (en) |
ES (1) | ES2322444T3 (en) |
WO (1) | WO2003026034A1 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060226497A1 (en) * | 2003-08-21 | 2006-10-12 | Jle Chen | Vertical nanotransistor, method for producing the same and memory assembly |
WO2007064334A1 (en) * | 2005-12-02 | 2007-06-07 | Advanced Micro Devices, Inc. | Polymer-based transistor devices, methods, and systems |
US20100181558A1 (en) * | 2007-07-03 | 2010-07-22 | Yoshihisa Yamashita | Semiconductor device, semiconductor device manufacturing method and image display device |
US20100276662A1 (en) * | 2008-09-05 | 2010-11-04 | University College Cork, National University Of Ireland | Junctionless metal-oxide-semiconductor transistor |
US20110204366A1 (en) * | 2007-08-07 | 2011-08-25 | Panasonic Corporation | Semiconductor device, method for manufacturing the same and image display |
US20110204367A1 (en) * | 2007-08-07 | 2011-08-25 | Panasonic Corporation | Semiconductor device, method for manufacturing the same and image display |
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Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4530149A (en) * | 1982-06-24 | 1985-07-23 | Rca Corporation | Method for fabricating a self-aligned vertical IGFET |
US5106778A (en) * | 1988-02-02 | 1992-04-21 | Massachusetts Institute Of Technology | Vertical transistor device fabricated with semiconductor regrowth |
US5324673A (en) * | 1992-11-19 | 1994-06-28 | Motorola, Inc. | Method of formation of vertical transistor |
US5414289A (en) * | 1992-03-02 | 1995-05-09 | Motorola, Inc. | Dynamic memory device having a vertical transistor |
US5668391A (en) * | 1995-08-02 | 1997-09-16 | Lg Semicon Co., Ltd. | Vertical thin film transistor |
US5739044A (en) * | 1993-07-28 | 1998-04-14 | Ngk Insulators, Ltd. | Method of manufacturing semiconductor device |
US5981970A (en) * | 1997-03-25 | 1999-11-09 | International Business Machines Corporation | Thin-film field-effect transistor with organic semiconductor requiring low operating voltages |
US6107660A (en) * | 1999-05-19 | 2000-08-22 | Worldwide Semiconductor Manufacturing Corp. | Vertical thin film transistor |
US6392271B1 (en) * | 1999-06-28 | 2002-05-21 | Intel Corporation | Structure and process flow for fabrication of dual gate floating body integrated MOS transistors |
US6426259B1 (en) * | 2000-11-15 | 2002-07-30 | Advanced Micro Devices, Inc. | Vertical field effect transistor with metal oxide as sidewall gate insulator |
US6653733B1 (en) * | 1996-02-23 | 2003-11-25 | Micron Technology, Inc. | Conductors in semiconductor devices |
US20050071969A1 (en) * | 2000-10-04 | 2005-04-07 | Henning Sirringhaus | Solid state embossing of polymer devices |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS614017A (en) * | 1984-06-18 | 1986-01-09 | Seiko Epson Corp | Thin film transistor liquid crystal panel |
JPH11329334A (en) * | 1998-05-20 | 1999-11-30 | Sanyo Electric Co Ltd | Manufacture for semiconductor device |
DE19916403C1 (en) | 1999-04-06 | 2000-10-12 | Hahn Meitner Inst Berlin Gmbh | Process for the production of thin, poorly soluble coatings |
FR2803237A1 (en) * | 1999-12-29 | 2001-07-06 | Iniversite Catholique De Louva | METHOD FOR CREATING PORES IN A POLYMER MATERIAL IN SHEETS OR A POLYMERIC LAYER SUCH AS A THIN FILM OF THICKNESS EQUIVALENT TO ONE HUNDRED NANOMETERS, PREMISELY DEPOSITED ON A METAL SUPPORT |
DE10036897C1 (en) * | 2000-07-28 | 2002-01-03 | Infineon Technologies Ag | Field effect transistor used in a switching arrangement comprises a gate region between a source region and a drain region |
DE10153563A1 (en) * | 2001-10-30 | 2003-05-15 | Infineon Technologies Ag | Semiconductor device fabrication method, involves constructing pair of bodies of organic semiconductor and electrically conductive contact material and doping by activated nanoparticles |
-
2001
- 2001-08-27 DE DE10142913A patent/DE10142913B4/en not_active Expired - Fee Related
-
2002
- 2002-08-27 EP EP02764558A patent/EP1421633B1/en not_active Expired - Lifetime
- 2002-08-27 US US10/487,802 patent/US20040201107A1/en not_active Abandoned
- 2002-08-27 ES ES02764558T patent/ES2322444T3/en not_active Expired - Lifetime
- 2002-08-27 WO PCT/DE2002/003191 patent/WO2003026034A1/en active Application Filing
- 2002-08-27 JP JP2003529548A patent/JP4102755B2/en not_active Expired - Fee Related
- 2002-08-27 AT AT02764558T patent/ATE427566T1/en not_active IP Right Cessation
- 2002-08-27 DE DE50213415T patent/DE50213415D1/en not_active Expired - Lifetime
-
2006
- 2006-01-09 US US11/327,218 patent/US7579281B2/en not_active Expired - Fee Related
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4530149A (en) * | 1982-06-24 | 1985-07-23 | Rca Corporation | Method for fabricating a self-aligned vertical IGFET |
US5106778A (en) * | 1988-02-02 | 1992-04-21 | Massachusetts Institute Of Technology | Vertical transistor device fabricated with semiconductor regrowth |
US5414289A (en) * | 1992-03-02 | 1995-05-09 | Motorola, Inc. | Dynamic memory device having a vertical transistor |
US5324673A (en) * | 1992-11-19 | 1994-06-28 | Motorola, Inc. | Method of formation of vertical transistor |
US5739044A (en) * | 1993-07-28 | 1998-04-14 | Ngk Insulators, Ltd. | Method of manufacturing semiconductor device |
US5668391A (en) * | 1995-08-02 | 1997-09-16 | Lg Semicon Co., Ltd. | Vertical thin film transistor |
US6653733B1 (en) * | 1996-02-23 | 2003-11-25 | Micron Technology, Inc. | Conductors in semiconductor devices |
US5981970A (en) * | 1997-03-25 | 1999-11-09 | International Business Machines Corporation | Thin-film field-effect transistor with organic semiconductor requiring low operating voltages |
US6107660A (en) * | 1999-05-19 | 2000-08-22 | Worldwide Semiconductor Manufacturing Corp. | Vertical thin film transistor |
US6392271B1 (en) * | 1999-06-28 | 2002-05-21 | Intel Corporation | Structure and process flow for fabrication of dual gate floating body integrated MOS transistors |
US20050071969A1 (en) * | 2000-10-04 | 2005-04-07 | Henning Sirringhaus | Solid state embossing of polymer devices |
US6426259B1 (en) * | 2000-11-15 | 2002-07-30 | Advanced Micro Devices, Inc. | Vertical field effect transistor with metal oxide as sidewall gate insulator |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060226497A1 (en) * | 2003-08-21 | 2006-10-12 | Jle Chen | Vertical nanotransistor, method for producing the same and memory assembly |
WO2007064334A1 (en) * | 2005-12-02 | 2007-06-07 | Advanced Micro Devices, Inc. | Polymer-based transistor devices, methods, and systems |
US20100181558A1 (en) * | 2007-07-03 | 2010-07-22 | Yoshihisa Yamashita | Semiconductor device, semiconductor device manufacturing method and image display device |
US8143617B2 (en) | 2007-07-03 | 2012-03-27 | Panasonic Corporation | Semiconductor device, semiconductor device manufacturing method and image display device |
US20110204366A1 (en) * | 2007-08-07 | 2011-08-25 | Panasonic Corporation | Semiconductor device, method for manufacturing the same and image display |
US20110204367A1 (en) * | 2007-08-07 | 2011-08-25 | Panasonic Corporation | Semiconductor device, method for manufacturing the same and image display |
US8193526B2 (en) | 2007-08-07 | 2012-06-05 | Panasonic Corporation | Transistor having an organic semiconductor with a hollow space |
US8288778B2 (en) | 2007-08-07 | 2012-10-16 | Panasonic Corporation | Semiconductor device having semiconductor elements formed inside a resin film substrate |
US20100276662A1 (en) * | 2008-09-05 | 2010-11-04 | University College Cork, National University Of Ireland | Junctionless metal-oxide-semiconductor transistor |
US8178862B2 (en) | 2008-09-05 | 2012-05-15 | University College Cork, National University Of Ireland Cork | Junctionless metal-oxide-semiconductor transistor |
Also Published As
Publication number | Publication date |
---|---|
JP4102755B2 (en) | 2008-06-18 |
JP2005503042A (en) | 2005-01-27 |
EP1421633A1 (en) | 2004-05-26 |
EP1421633B1 (en) | 2009-04-01 |
DE10142913A1 (en) | 2003-03-27 |
US20060121654A1 (en) | 2006-06-08 |
ES2322444T3 (en) | 2009-06-22 |
DE10142913B4 (en) | 2004-03-18 |
DE50213415D1 (en) | 2009-05-14 |
ATE427566T1 (en) | 2009-04-15 |
WO2003026034A1 (en) | 2003-03-27 |
US7579281B2 (en) | 2009-08-25 |
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